Produkte > YJD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||
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| YJD112010DG1 | Yangjie Technology | Description: TO-252 1200V 16A Diodes Rectif Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD120N04A | Yangjie Technology | Description: TO-252 N 40V 120A Transistors F Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD15N10A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.5A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 12550 Stücke: Lieferzeit 7-14 Tag (e) |
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| YJD15N10A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.5A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 12550 Stücke: Lieferzeit 14-21 Tag (e) |
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| YJD15N10A | Yangjie Technology | Description: TO-252 N 100V 15A Transistors F Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD180N03A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD20N06A | Yangjie Technology | Description: TO-252 N 60V 20A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD20N06A | Yangjie Electronic Technology | N-Channel Enhancement Mode Field Effect Transistor | auf Bestellung 500000 Stücke: Lieferzeit 14-21 Tag (e) |
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| YJD20N06A | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 60V 20A TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||
| YJD20N06A | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 60V 20A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||
| YJD20N06A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 5040 Stücke: Lieferzeit 7-14 Tag (e) |
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| YJD20N06A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 5040 Stücke: Lieferzeit 14-21 Tag (e) |
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| YJD20N06A-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 60V 20A TO-252 | Produkt ist nicht verfügbar | |||||||||||||
| YJD20N06A-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 60V 20A TO-252 | Produkt ist nicht verfügbar | |||||||||||||
| YJD25N15B | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 25A Pulsed drain current: 90A Power dissipation: 52W Case: TO252 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||
| YJD25N15B | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 25A Pulsed drain current: 90A Power dissipation: 52W Case: TO252 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||
| YJD40N04A | Yangjie Technology | Description: TO-252 N 40V 40A Transistors FE | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD45G10A-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 100V 45A TO-252 | Produkt ist nicht verfügbar | |||||||||||||
| YJD45G10A-F1-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 100V 45A TO-252 | Produkt ist nicht verfügbar | |||||||||||||
| YJD50N03A | Yangjie Technology | Description: TO-252 N 30V 50A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD50N06A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 200A Power dissipation: 21.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||
| YJD50N06A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD50N06A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 200A Power dissipation: 21.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||
| YJD60N02A | Yangjie Technology | Description: TO-252 N 20V 60A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD60N04A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 200A Power dissipation: 35W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 6655 Stücke: Lieferzeit 7-14 Tag (e) |
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| YJD60N04A | Yangjie Technology | Description: TO-252 N 40V 60A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD60N04A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 200A Power dissipation: 35W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 6655 Stücke: Lieferzeit 14-21 Tag (e) |
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| YJD60N04A | Yangjie Electronic Technology | N-Channel Enhancement Mode Field Effect Transistor | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| YJD80G06A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W Type of transistor: N-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Pulsed drain current: 240A Power dissipation: 42.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||
| YJD80G06A | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W Type of transistor: N-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: 60V Drain current: 56A Pulsed drain current: 240A Power dissipation: 42.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||
| YJD80G06A-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 60V 80A TO-252 | Produkt ist nicht verfügbar | |||||||||||||
| YJD80G06A-F1-0000 | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 60V 80A TO-252 | Produkt ist nicht verfügbar | |||||||||||||
| YJD80N03A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD80N03B | Yangjie Technology | Description: TO-252 N 30V 80A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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| YJD90N06A | Yangjie Technology | Description: TO-252 N 60V 90A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active | auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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