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KBPC3502T KBPC3502T Navitas Semiconductor, Inc. kbpc35005t.pdf Description: BRIDGE RECT 1PHASE 200V 35A KBPC
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KBPC3502W KBPC3502W Navitas Semiconductor, Inc. kbpc35005t.pdf Description: BRIDGE RECT 1P 200V 35A KBPC-W
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KBPC3504T KBPC3504T Navitas Semiconductor, Inc. kbpc35005t.pdf Description: BRIDGE RECT 1PHASE 400V 35A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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KBPC3504W KBPC3504W Navitas Semiconductor, Inc. kbpc35005t.pdf Description: BRIDGE RECT 1P 400V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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KBPC3506T KBPC3506T Navitas Semiconductor, Inc. kbpc3506t.pdf Description: BRIDGE RECT 1PHASE 600V 35A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBPC3506W KBPC3506W Navitas Semiconductor, Inc. kbpc3506t.pdf Description: BRIDGE RECT 1P 600V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBPC3508T KBPC3508T Navitas Semiconductor, Inc. kbpc3506t.pdf Description: BRIDGE RECT 1PHASE 800V 35A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KBPC3510T KBPC3510T Navitas Semiconductor, Inc. kbpc3506t.pdf Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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KBPC3510W KBPC3510W Navitas Semiconductor, Inc. kbpc3506t.pdf description Description: BRIDGE RECT 1P 1KV 35A KBPC-W
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KBPC5006T KBPC5006T Navitas Semiconductor, Inc. kbpc5006t.pdf Description: BRIDGE RECT 1PHASE 600V 50A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBPC5006W KBPC5006W Navitas Semiconductor, Inc. kbpc5006t.pdf Description: BRIDGE RECT 1P 600V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBPC5008T KBPC5008T Navitas Semiconductor, Inc. kbpc5006t.pdf Description: BRIDGE RECT 1PHASE 800V 50A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KBPC5008W KBPC5008W Navitas Semiconductor, Inc. kbpc5006t.pdf Description: BRIDGE RECT 1P 800V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KBPC5010T KBPC5010T Navitas Semiconductor, Inc. kbpc5006t.pdf Description: BRIDGE RECT 1P 1KV 50A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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50+5.88 EUR
100+5.37 EUR
500+4.47 EUR
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KBPC5010W KBPC5010W Navitas Semiconductor, Inc. kbpc5006t.pdf Description: BRIDGE RECT 1P 1KV 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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KBU10005 Navitas Semiconductor, Inc. kbu10005.pdf Description: BRIDGE RECT 1PHASE 50V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBU1001 Navitas Semiconductor, Inc. kbu10005.pdf Description: BRIDGE RECT 1PHASE 100V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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KBU1002 Navitas Semiconductor, Inc. kbu10005.pdf description Description: BRIDGE RECT 1PHASE 200V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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KBU1004 Navitas Semiconductor, Inc. kbu10005.pdf Description: BRIDGE RECT 1PHASE 400V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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KBU1006 Navitas Semiconductor, Inc. kbu1006.pdf Description: BRIDGE RECT 1PHASE 600V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3785 Stücke:
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5+4.33 EUR
10+2.8 EUR
400+1.57 EUR
800+1.44 EUR
1200+1.38 EUR
2000+1.31 EUR
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KBU1008 Navitas Semiconductor, Inc. kbu1006.pdf Description: BRIDGE RECT 1PHASE 800V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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KBU1010 Navitas Semiconductor, Inc. kbu1006.pdf Description: BRIDGE RECT 1PHASE 1KV 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBU6A KBU6A Navitas Semiconductor, Inc. kbu6d.pdf Description: BRIDGE RECT 1PHASE 50V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBU6B KBU6B Navitas Semiconductor, Inc. kbu6d.pdf Description: BRIDGE RECT 1PHASE 100V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1699 Stücke:
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5+4.3 EUR
10+2.75 EUR
400+1.54 EUR
800+1.4 EUR
1200+1.33 EUR
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KBU6D KBU6D Navitas Semiconductor, Inc. kbu6d.pdf Description: BRIDGE RECT 1PHASE 200V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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5+4.3 EUR
10+2.75 EUR
400+1.54 EUR
800+1.4 EUR
1200+1.33 EUR
2000+1.26 EUR
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KBU6G KBU6G Navitas Semiconductor, Inc. kbu6d.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBU6J KBU6J Navitas Semiconductor, Inc. kbu6j.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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10+2.75 EUR
400+1.54 EUR
800+1.4 EUR
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KBU6K KBU6K Navitas Semiconductor, Inc. kbu6j.pdf Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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KBU6M KBU6M Navitas Semiconductor, Inc. kbu6j.pdf Description: BRIDGE RECT 1PHASE 1KV 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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5+4.3 EUR
10+2.75 EUR
400+1.54 EUR
800+1.4 EUR
1200+1.33 EUR
2000+1.26 EUR
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KBU8G KBU8G Navitas Semiconductor, Inc. kbu8b.pdf Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 2928 Stücke:
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6+4 EUR
10+2.57 EUR
400+1.43 EUR
800+1.31 EUR
1200+1.25 EUR
2000+1.19 EUR
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KBU8J KBU8J Navitas Semiconductor, Inc. kbu8j.pdf Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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KBU8K KBU8K Navitas Semiconductor, Inc. kbu8j.pdf Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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KBU8M KBU8M Navitas Semiconductor, Inc. kbu8j.pdf Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1255 Stücke:
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5+4.36 EUR
10+2.8 EUR
400+1.56 EUR
800+1.43 EUR
1200+1.37 EUR
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MBR200100CT Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR200100CTR Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR200100CTS MBR200100CTS Navitas Semiconductor, Inc. MBR200100CTS.pdf Description: DIODE MOD SCHOT 100V 200A SOT227
Packaging: Tube
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Produkt ist nicht verfügbar
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MBR200150CT Navitas Semiconductor, Inc. mbr200150ct.pdf Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
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MBR200150CTR Navitas Semiconductor, Inc. mbr200150ct.pdf Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
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MBR200200CT Navitas Semiconductor, Inc. mbr200150ct.pdf Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
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MBR200200CTR Navitas Semiconductor, Inc. mbr200150ct.pdf Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
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MBR20020CT Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR20020CTR Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20030CT MBR20030CT Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR20030CTR MBR20030CTR Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR20035CT Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR20035CTR Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20040CT Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR20040CTR Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20045CT Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR20045CTR Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR20060CT Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR20060CTR Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR20080CT Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR20080CTR Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR2X030A100 MBR2X030A100 Navitas Semiconductor, Inc. mbr2x030a100.pdf Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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MBR30060CT Navitas Semiconductor, Inc. mbr300100ct.pdf Description: DIODE MOD SCHOTT 60V 150A 2TOWER
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MBR30060CTR Navitas Semiconductor, Inc. mbr300100ct.pdf Description: DIODE MOD SCHOTT 60V 150A 2TOWER
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MBR35100 Navitas Semiconductor, Inc. mbr3560.pdf Description: DIODE SCHOTTKY 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR35100R Navitas Semiconductor, Inc. mbr3560.pdf Description: DIODE SCHOTTKY REV 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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MBR3545 MBR3545 Navitas Semiconductor, Inc. mbr3560.pdf Description: DIODE SCHOTTKY 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
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KBPC3502T kbpc35005t.pdf
KBPC3502T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 35A KBPC
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KBPC3502W kbpc35005t.pdf
KBPC3502W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 200V 35A KBPC-W
Produkt ist nicht verfügbar
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KBPC3504T kbpc35005t.pdf
KBPC3504T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 35A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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KBPC3504W kbpc35005t.pdf
KBPC3504W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 400V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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KBPC3506T kbpc3506t.pdf
KBPC3506T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 35A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBPC3506W kbpc3506t.pdf
KBPC3506W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 600V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBPC3508T kbpc3506t.pdf
KBPC3508T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 35A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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KBPC3510T kbpc3506t.pdf
KBPC3510T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC3510W description kbpc3506t.pdf
KBPC3510W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 35A KBPC-W
Produkt ist nicht verfügbar
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KBPC5006T kbpc5006t.pdf
KBPC5006T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 50A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBPC5006W kbpc5006t.pdf
KBPC5006W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 600V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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KBPC5008T kbpc5006t.pdf
KBPC5008T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 50A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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KBPC5008W kbpc5006t.pdf
KBPC5008W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 800V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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KBPC5010T kbpc5006t.pdf
KBPC5010T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 50A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.21 EUR
50+5.88 EUR
100+5.37 EUR
500+4.47 EUR
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KBPC5010W kbpc5006t.pdf
KBPC5010W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBU10005 kbu10005.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBU1001 kbu10005.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 100V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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KBU1002 description kbu10005.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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KBU1004 kbu10005.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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KBU1006 kbu1006.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3785 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.33 EUR
10+2.8 EUR
400+1.57 EUR
800+1.44 EUR
1200+1.38 EUR
2000+1.31 EUR
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KBU1008 kbu1006.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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KBU1010 kbu1006.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBU6A kbu6d.pdf
KBU6A
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBU6B kbu6d.pdf
KBU6B
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 100V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1699 Stücke:
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5+4.3 EUR
10+2.75 EUR
400+1.54 EUR
800+1.4 EUR
1200+1.33 EUR
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KBU6D kbu6d.pdf
KBU6D
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2445 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.3 EUR
10+2.75 EUR
400+1.54 EUR
800+1.4 EUR
1200+1.33 EUR
2000+1.26 EUR
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KBU6G kbu6d.pdf
KBU6G
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBU6J kbu6j.pdf
KBU6J
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1569 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.3 EUR
10+2.75 EUR
400+1.54 EUR
800+1.4 EUR
1200+1.33 EUR
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KBU6K kbu6j.pdf
KBU6K
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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KBU6M kbu6j.pdf
KBU6M
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 2675 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.3 EUR
10+2.75 EUR
400+1.54 EUR
800+1.4 EUR
1200+1.33 EUR
2000+1.26 EUR
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KBU8G kbu8b.pdf
KBU8G
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 2928 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4 EUR
10+2.57 EUR
400+1.43 EUR
800+1.31 EUR
1200+1.25 EUR
2000+1.19 EUR
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KBU8J kbu8j.pdf
KBU8J
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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KBU8K kbu8j.pdf
KBU8K
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBU8M kbu8j.pdf
KBU8M
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1255 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.36 EUR
10+2.8 EUR
400+1.56 EUR
800+1.43 EUR
1200+1.37 EUR
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MBR200100CT mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR200100CTR mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR200100CTS MBR200100CTS.pdf
MBR200100CTS
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A SOT227
Packaging: Tube
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Produkt ist nicht verfügbar
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MBR200150CT mbr200150ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
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MBR200150CTR mbr200150ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
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MBR200200CT mbr200150ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
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MBR200200CTR mbr200150ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
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MBR20020CT mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20020CTR mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20030CT mbr20020ct.pdf
MBR20030CT
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20030CTR mbr20020ct.pdf
MBR20030CTR
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20035CT mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20035CTR mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20040CT mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20040CTR mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20045CT mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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MBR20045CTR mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20060CT mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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MBR20060CTR mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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MBR20080CT mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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MBR20080CTR mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR2X030A100 mbr2x030a100.pdf
MBR2X030A100
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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MBR30060CT mbr300100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Produkt ist nicht verfügbar
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MBR30060CTR mbr300100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Produkt ist nicht verfügbar
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MBR35100 mbr3560.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR35100R mbr3560.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR3545 mbr3560.pdf
MBR3545
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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