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MBR3545R Navitas Semiconductor, Inc. mbr3560.pdf Description: DIODE SCHOTTKY REV 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
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MBR400100CT MBR400100CT Navitas Semiconductor, Inc. mbr400100ct.pdf Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR50040CT MBR50040CT Navitas Semiconductor, Inc. mbr50020ctr.pdf Description: DIODE MOD SCHOTT 40V 250A 2TOWER
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MBR50040CTR MBR50040CTR Navitas Semiconductor, Inc. mbr50020ctr.pdf Description: DIODE MOD SCHOTT 40V 250A 2TOWER
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MBR50045CT MBR50045CT Navitas Semiconductor, Inc. mbr500100ctr.pdf Description: DIODE MOD SCHOTT 45V 250A 2TOWER
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MBR50045CTR MBR50045CTR Navitas Semiconductor, Inc. mbr500100ctr.pdf Description: DIODE MOD SCHOTT 45V 250A 2TOWER
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MBR6045R Navitas Semiconductor, Inc. mbr60100.pdf Description: DIODE SCHOTTKY REV 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBR80100 Navitas Semiconductor, Inc. mbr80100.pdf Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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MBR80100R Navitas Semiconductor, Inc. mbr80100.pdf Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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MBRF200150 Navitas Semiconductor, Inc. Description: DIODE MOD SCHOTTKY 150V TO-244AB
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MBRF200150R Navitas Semiconductor, Inc. Description: DIODE MOD SCHOTTKY 150V TO-244AB
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MBRF500100 Navitas Semiconductor, Inc. Description: DIODE MOD SCHOTTKY 100V TO-244AB
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MBRF500100R Navitas Semiconductor, Inc. Description: DIODE MOD SCHOTTKY 100V TO-244AB
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MBRF50020 Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 20V 250A TO244AB
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MBRF50030 Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 30V 250A TO244AB
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MBRF50030R Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 30V 250A TO244AB
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MBRF50035 Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 35V 250A TO244AB
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MBRF50035R Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 35V 250A TO244AB
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MBRF50045 Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 45V 250A TO244AB
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MBRF50045R Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 45V 250A TO244AB
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MBRF50060 Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 60V 250A TO244AB
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MBRF50060R Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 60V 250A TO244AB
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MBRF600200 MBRF600200 Navitas Semiconductor, Inc. Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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MBRF600200R MBRF600200R Navitas Semiconductor, Inc. Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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MBRF60020R MBRF60020R Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 20V 300A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
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MBRH12040R MBRH12040R Navitas Semiconductor, Inc. mbrh12020r.pdf Description: DIODE SCHOTTKY REV 40V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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MBRT40045 MBRT40045 Navitas Semiconductor, Inc. mbrt400100.pdf Description: DIODE MOD SCHOTT 45V 200A 3TOWER
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MSRTA20060AD MSRTA20060AD Navitas Semiconductor, Inc. msrta20060ad.pdf Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRTA20060D Navitas Semiconductor, Inc. msrta20060d.pdf Description: DIODE MODULE GEN PURP 600V 200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MUR2505 Navitas Semiconductor, Inc. mur2505.pdf Description: DIODE STANDARD 50V 25A DO4
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MUR2505R Navitas Semiconductor, Inc. mur2505.pdf Description: DIODE STANDARD REV 50V 25A DO4
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MUR2510 MUR2510 Navitas Semiconductor, Inc. mur2505.pdf Description: DIODE STANDARD 100V 25A DO4
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MUR2X030A10 MUR2X030A10 Navitas Semiconductor, Inc. mur2x030a10.pdf Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
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MUR2X060A02 MUR2X060A02 Navitas Semiconductor, Inc. mur2x060a02.pdf Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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MUR2X060A06 MUR2X060A06 Navitas Semiconductor, Inc. mur2x060a06.pdf Description: DIODE MODULE GP 600V 60A SOT-227
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MUR2X100A02 MUR2X100A02 Navitas Semiconductor, Inc. mur2x100a02.pdf Description: DIODE MODULE GP 200V 100A SOT227
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MUR2X100A04 MUR2X100A04 Navitas Semiconductor, Inc. mur2x100a04.pdf Description: DIODE MODULE GP 400V 100A SOT227
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MURTA20060 MURTA20060 Navitas Semiconductor, Inc. murta200120.pdf Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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MURTA20060R MURTA20060R Navitas Semiconductor, Inc. murta200120.pdf Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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NV6027 NV6027 Navitas Semiconductor, Inc. NV6027_Datasheet.pdf Description: GANFET DISCRETE 650V 120MOHM PQF
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NV6027 NV6027 Navitas Semiconductor, Inc. NV6027_Datasheet.pdf Description: GANFET DISCRETE 650V 120MOHM PQF
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NV6029 NV6029 Navitas Semiconductor, Inc. NV6029_Datasheet.pdf Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
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NV6029 NV6029 Navitas Semiconductor, Inc. NV6029_Datasheet.pdf Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
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NV6113 NV6113 Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
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NV6113 NV6113 Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
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NV6113-RA NV6113-RA Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
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NV6113-RA NV6113-RA Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
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NV6115 NV6115 Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 8A 8-PWRVDFN
Part Status: Active
Supplier Device Package: 8-QFN (5x6)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 170mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
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NV6115 NV6115 Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6115-RA NV6115-RA Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
auf Bestellung 1274 Stücke:
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NV6115-RA NV6115-RA Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
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NV6117 NV6117 Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
auf Bestellung 783 Stücke:
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NV6117 NV6117 Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117-RA NV6117-RA Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117-RA NV6117-RA Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
auf Bestellung 955 Stücke:
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NV6123 NV6123 Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
Produkt ist nicht verfügbar
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NV6123 NV6123 Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
auf Bestellung 1060 Stücke:
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NV6123-RA NV6123-RA Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 5 A
Voltage: 650 V
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NV6123-RA NV6123-RA Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 5 A
Voltage: 650 V
auf Bestellung 1635 Stücke:
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NV6125 NV6125 Navitas Semiconductor, Inc. NV6125-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 8A 30-PWRVQFN
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Supplier Device Package: 30-QFN (6x8)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 175mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
auf Bestellung 4716 Stücke:
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3+7.58 EUR
10+5.72 EUR
25+5.27 EUR
100+4.76 EUR
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MBR3545R mbr3560.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
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MBR400100CT mbr400100ct.pdf
MBR400100CT
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
auf Bestellung 33 Stücke:
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AnzahlPrivatkunde
1+179.65 EUR
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MBR50040CT mbr50020ctr.pdf
MBR50040CT
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Produkt ist nicht verfügbar
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MBR50040CTR mbr50020ctr.pdf
MBR50040CTR
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Produkt ist nicht verfügbar
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MBR50045CT mbr500100ctr.pdf
MBR50045CT
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Produkt ist nicht verfügbar
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MBR50045CTR mbr500100ctr.pdf
MBR50045CTR
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Produkt ist nicht verfügbar
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MBR6045R mbr60100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR80100 mbr80100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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MBR80100R mbr80100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBRF200150
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 150V TO-244AB
Produkt ist nicht verfügbar
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MBRF200150R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 150V TO-244AB
Produkt ist nicht verfügbar
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MBRF500100
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 100V TO-244AB
Produkt ist nicht verfügbar
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MBRF500100R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 100V TO-244AB
Produkt ist nicht verfügbar
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MBRF50020
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 20V 250A TO244AB
Produkt ist nicht verfügbar
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MBRF50030
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 30V 250A TO244AB
Produkt ist nicht verfügbar
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MBRF50030R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 30V 250A TO244AB
Produkt ist nicht verfügbar
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MBRF50035
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 35V 250A TO244AB
Produkt ist nicht verfügbar
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MBRF50035R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 35V 250A TO244AB
Produkt ist nicht verfügbar
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MBRF50045
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 45V 250A TO244AB
Produkt ist nicht verfügbar
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MBRF50045R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 45V 250A TO244AB
Produkt ist nicht verfügbar
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MBRF50060
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 60V 250A TO244AB
Produkt ist nicht verfügbar
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MBRF50060R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 60V 250A TO244AB
Produkt ist nicht verfügbar
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MBRF600200
MBRF600200
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
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MBRF600200R
MBRF600200R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
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MBRF60020R
MBRF60020R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 20V 300A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Produkt ist nicht verfügbar
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MBRH12040R mbrh12020r.pdf
MBRH12040R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 40V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 120 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
auf Bestellung 44 Stücke:
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1+128.37 EUR
36+90.18 EUR
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MBRT40045 mbrt400100.pdf
MBRT40045
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 200A 3TOWER
auf Bestellung 58 Stücke:
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AnzahlPrivatkunde
1+230 EUR
40+181.15 EUR
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MSRTA20060AD msrta20060ad.pdf
MSRTA20060AD
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MSRTA20060D msrta20060d.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GEN PURP 600V 200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MUR2505 mur2505.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 50V 25A DO4
Produkt ist nicht verfügbar
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MUR2505R mur2505.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD REV 50V 25A DO4
Produkt ist nicht verfügbar
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MUR2510 mur2505.pdf
MUR2510
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 100V 25A DO4
Produkt ist nicht verfügbar
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MUR2X030A10 mur2x030a10.pdf
MUR2X030A10
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Produkt ist nicht verfügbar
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MUR2X060A02 mur2x060a02.pdf
MUR2X060A02
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
auf Bestellung 16 Stücke:
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MUR2X060A06 mur2x060a06.pdf
MUR2X060A06
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 60A SOT-227
Produkt ist nicht verfügbar
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MUR2X100A02 mur2x100a02.pdf
MUR2X100A02
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 200V 100A SOT227
Produkt ist nicht verfügbar
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MUR2X100A04 mur2x100a04.pdf
MUR2X100A04
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 400V 100A SOT227
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MURTA20060 murta200120.pdf
MURTA20060
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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MURTA20060R murta200120.pdf
MURTA20060R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
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NV6027 NV6027_Datasheet.pdf
NV6027
Hersteller: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 120MOHM PQF
Produkt ist nicht verfügbar
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NV6027 NV6027_Datasheet.pdf
NV6027
Hersteller: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 120MOHM PQF
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2+11.35 EUR
10+8.71 EUR
25+8.06 EUR
100+7.33 EUR
250+7.07 EUR
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NV6029 NV6029_Datasheet.pdf
NV6029
Hersteller: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
Produkt ist nicht verfügbar
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NV6029 NV6029_Datasheet.pdf
NV6029
Hersteller: Navitas Semiconductor, Inc.
Description: GANFET DISCRETE 650V 50MOHM PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 6V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 24mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 400 V
auf Bestellung 2749 Stücke:
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1+24.67 EUR
10+19.42 EUR
25+18.1 EUR
100+16.66 EUR
250+16.6 EUR
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NV6113 NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6113 NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 5 A
Voltage: 650 V
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.82 EUR
10+4.36 EUR
25+3.99 EUR
100+3.58 EUR
250+3.39 EUR
500+3.34 EUR
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NV6113-RA NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6113-RA NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Current: 5 A
Voltage: 650 V
auf Bestellung 1013 Stücke:
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AnzahlPrivatkunde
4+5.82 EUR
10+4.36 EUR
25+3.99 EUR
100+3.58 EUR
250+3.39 EUR
500+3.28 EUR
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NV6115 NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Part Status: Active
Supplier Device Package: 8-QFN (5x6)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 170mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
auf Bestellung 874 Stücke:
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AnzahlPrivatkunde
3+7.6 EUR
10+5.75 EUR
25+5.28 EUR
100+4.77 EUR
250+4.52 EUR
500+4.51 EUR
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NV6115 NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6115-RA NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
auf Bestellung 1274 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.58 EUR
10+5.72 EUR
25+5.27 EUR
100+4.76 EUR
250+4.51 EUR
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NV6115-RA NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
1000+4.52 EUR
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NV6117 NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.16 EUR
10+8.54 EUR
25+7.89 EUR
100+7.18 EUR
250+6.91 EUR
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NV6117 NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117-RA NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117-RA NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.16 EUR
10+8.54 EUR
25+7.89 EUR
100+7.18 EUR
250+6.84 EUR
500+6.63 EUR
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NV6123 NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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NV6123 NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
auf Bestellung 1060 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.82 EUR
10+4.36 EUR
25+3.99 EUR
100+3.58 EUR
250+3.39 EUR
500+3.34 EUR
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NV6123-RA NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 5 A
Voltage: 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.37 EUR
Mindestbestellmenge: 1000 Stücke
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NV6123-RA NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 5 A
Voltage: 650 V
auf Bestellung 1635 Stücke:
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4+5.82 EUR
10+4.36 EUR
25+3.99 EUR
100+3.58 EUR
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500+3.28 EUR
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NV6125 NV6125-Datasheet-FINAL-04-11-22.pdf
NV6125
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 8A 30-PWRVQFN
Voltage: 650 V
Current: 8 A
Configuration: Half Bridge
Type: MOSFET
Supplier Device Package: 30-QFN (6x8)
Ratio - Input:Output: 1:1
Current - Output (Max): 8A
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Voltage - Load: 650V
Input Type: Non-Inverting
Rds On (Typ): 175mOhm
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 125°C (TC)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
auf Bestellung 4716 Stücke:
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AnzahlPrivatkunde
3+7.58 EUR
10+5.72 EUR
25+5.27 EUR
100+4.76 EUR
250+4.51 EUR
500+4.5 EUR
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