Produkte > NAVITAS SEMICONDUCTOR, INC. > Alle Produkte des Herstellers NAVITAS SEMICONDUCTOR, INC. (664) > Seite 6 nach 12
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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| KBU1004 | Navitas Semiconductor, Inc. |
 Description: BRIDGE RECT 1PHASE 400V 10A KBUPackaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| KBU1006 | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 600V 10A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 3785 Stücke: Lieferzeit 10-14 Tag (e) |
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| KBU1008 | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 800V 10A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| KBU1010 | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 1KV 10A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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KBU6A | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 50V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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KBU6B | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 100V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
auf Bestellung 1699 Stücke: Lieferzeit 10-14 Tag (e) |
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KBU6D | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 200V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 2445 Stücke: Lieferzeit 10-14 Tag (e) |
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KBU6G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 400V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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KBU6J | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 600V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
auf Bestellung 1569 Stücke: Lieferzeit 10-14 Tag (e) |
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KBU6K | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 800V 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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KBU6M | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 1KV 6A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 2675 Stücke: Lieferzeit 10-14 Tag (e) |
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KBU8G | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 400V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 2928 Stücke: Lieferzeit 10-14 Tag (e) |
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KBU8J | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 600V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 1296 Stücke: Lieferzeit 10-14 Tag (e) |
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KBU8K | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 800V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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KBU8M | Navitas Semiconductor, Inc. |
Description: BRIDGE RECT 1PHASE 1KV 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 8363 Stücke: Lieferzeit 10-14 Tag (e) |
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| MBR200100CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 100V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR200100CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 100V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MBR200100CTS | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 100V 200A SOT227 Packaging: Tube Package / Case: SOT-227-4 Mounting Type: Screw Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 80 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| MBR200150CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 150V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR200150CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 150V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 150 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR200200CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 200V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR200200CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 200V 100A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A Current - Reverse Leakage @ Vr: 3 mA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20020CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 20V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20020CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 20V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MBR20030CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 30V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MBR20030CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 30V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| MBR20035CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 35V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20035CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 35V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20040CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 40V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20040CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 40V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20045CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 45V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20045CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 45V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20060CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 60V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20060CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 60V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20080CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 80V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR20080CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 80V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MBR2X030A100 | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 100V 60A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| MBR30060CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 60V 150A 2TOWER |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR30060CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 60V 150A 2TOWER |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR35100 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 100V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR35100R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 100V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR3535 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 35V 35A DO4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR3535R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 35V 35A DO4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
MBR3540 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 40V 35A DO4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
MBR3545 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 45V 35A DO4 Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-4 Current - Average Rectified (Io): 35A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| MBR3545R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 45V 35A DO4 Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-4 Current - Average Rectified (Io): 35A Technology: Schottky, Reverse Polarity Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
|
MBR3560R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 60V 35A DO4 |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| MBR3580 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 80V 35A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR3580R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 80V 35A DO4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
MBR400100CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOT 100V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
MBR50040CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 40V 250A 2TOWER |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
MBR50040CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 40V 250A 2TOWER |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
MBR50045CT | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 45V 250A 2TOWER |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
MBR50045CTR | Navitas Semiconductor, Inc. |
Description: DIODE MOD SCHOTT 45V 250A 2TOWER |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| MBR60100 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 100V 60A DO5 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR60100R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 100V 60A DO5 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR6060 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 60V 60A DO5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR6060R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 60V 60A DO5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR80100 | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY 100V 80A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR80100R | Navitas Semiconductor, Inc. |
Description: DIODE SCHOTTKY REV 100V 80A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH |
| KBU1004 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KBU1006 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 3785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.33 EUR |
| 10+ | 2.8 EUR |
| 400+ | 1.57 EUR |
| 800+ | 1.44 EUR |
| 1200+ | 1.38 EUR |
| 2000+ | 1.31 EUR |
| KBU1008 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KBU1010 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KBU6A |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBU6B |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 100V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 100V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1699 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.3 EUR |
| 10+ | 2.75 EUR |
| 400+ | 1.54 EUR |
| 800+ | 1.4 EUR |
| 1200+ | 1.33 EUR |
| KBU6D |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.3 EUR |
| 10+ | 2.75 EUR |
| 400+ | 1.54 EUR |
| 800+ | 1.4 EUR |
| 1200+ | 1.33 EUR |
| 2000+ | 1.26 EUR |
| KBU6G |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KBU6J |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1569 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.3 EUR |
| 10+ | 2.75 EUR |
| 400+ | 1.54 EUR |
| 800+ | 1.4 EUR |
| 1200+ | 1.33 EUR |
| KBU6K |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KBU6M |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 2675 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.19 EUR |
| 10+ | 2.69 EUR |
| 50+ | 2.03 EUR |
| 400+ | 1.5 EUR |
| 800+ | 1.37 EUR |
| KBU8G |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 2928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4 EUR |
| 10+ | 2.57 EUR |
| 400+ | 1.43 EUR |
| 800+ | 1.31 EUR |
| 1200+ | 1.25 EUR |
| 2000+ | 1.19 EUR |
| KBU8J |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.44 EUR |
| 10+ | 2.86 EUR |
| 50+ | 2.17 EUR |
| 400+ | 1.59 EUR |
| 800+ | 1.46 EUR |
| KBU8K |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBU8M |
|
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 8363 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.71 EUR |
| 10+ | 3.69 EUR |
| 50+ | 2.82 EUR |
| 400+ | 2.11 EUR |
| 800+ | 1.94 EUR |
| MBR200100CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MBR200100CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MBR200100CTS |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A SOT227
Packaging: Tube
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Description: DIODE MOD SCHOT 100V 200A SOT227
Packaging: Tube
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 13 Stücke
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Stück im Wert von UAH
| MBR200150CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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Stück im Wert von UAH
| MBR200150CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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Stück im Wert von UAH
| MBR200200CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR200200CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR20020CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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Stück im Wert von UAH
| MBR20020CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MBR20030CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR20030CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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Stück im Wert von UAH
| MBR20035CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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Stück im Wert von UAH
| MBR20035CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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Stück im Wert von UAH
| MBR20040CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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| MBR20040CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR20045CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR20045CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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| MBR20060CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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| MBR20060CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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Stück im Wert von UAH
| MBR20080CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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| MBR20080CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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| MBR2X030A100 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR30060CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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| MBR30060CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Description: DIODE MOD SCHOTT 60V 150A 2TOWER
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
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| MBR35100 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| MBR35100R |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY REV 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR3535 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 35V 35A DO4
Description: DIODE SCHOTTKY 35V 35A DO4
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| MBR3535R |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 35V 35A DO4
Description: DIODE SCHOTTKY REV 35V 35A DO4
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| MBR3540 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 40V 35A DO4
Description: DIODE SCHOTTKY 40V 35A DO4
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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Stück im Wert von UAH
| MBR3545 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Description: DIODE SCHOTTKY 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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Stück im Wert von UAH
| MBR3545R |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Description: DIODE SCHOTTKY REV 45V 35A DO4
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 35A
Technology: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| MBR3560R |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 60V 35A DO4
Description: DIODE SCHOTTKY REV 60V 35A DO4
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 42.3 EUR |
| 10+ | 30.46 EUR |
| 50+ | 25.41 EUR |
| MBR3580 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 80V 35A DO4
Description: DIODE SCHOTTKY 80V 35A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR3580R |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 80V 35A DO4
Description: DIODE SCHOTTKY REV 80V 35A DO4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR400100CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 179.65 EUR |
| MBR50040CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR50040CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Description: DIODE MOD SCHOTT 40V 250A 2TOWER
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR50045CT |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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Stück im Wert von UAH
| MBR50045CTR |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Description: DIODE MOD SCHOTT 45V 250A 2TOWER
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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| MBR60100 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 100V 60A DO5
Description: DIODE SCHOTTKY 100V 60A DO5
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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| MBR60100R |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 100V 60A DO5
Description: DIODE SCHOTTKY REV 100V 60A DO5
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen
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| MBR6060 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 60V 60A DO5
Description: DIODE SCHOTTKY 60V 60A DO5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR6060R |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 60V 60A DO5
Description: DIODE SCHOTTKY REV 60V 60A DO5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR80100 |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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| MBR80100R |
|
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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