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1N3883 1N3883 Navitas Semiconductor, Inc. 1n3879.pdf Description: DIODE STANDARD 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.89 EUR
10+9.51 EUR
Mindestbestellmenge: 2
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2W10M Navitas Semiconductor, Inc. 2W005M-2W10M.pdf Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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BR1010 Navitas Semiconductor, Inc. br1010.pdf Description: BRIDGE RECT 1PHASE 1KV 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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BR810 BR810 Navitas Semiconductor, Inc. br86.pdf Description: BRIDGE RECT 1PHASE 1KV 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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DB105G Navitas Semiconductor, Inc. db105g.pdf Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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DB106G Navitas Semiconductor, Inc. db105g.pdf Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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DB107G Navitas Semiconductor, Inc. db105g.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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DB157G Navitas Semiconductor, Inc. db155g.pdf description Description: BRIDGE RECT 1PHASE 1KV 1.5A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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G2R1000MT33J-TR G2R1000MT33J-TR Navitas Semiconductor, Inc. G2R1000MT33J.pdf Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 1211 Stücke:
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1+36.08 EUR
10+26.16 EUR
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G2R1000MT33J-TR G2R1000MT33J-TR Navitas Semiconductor, Inc. G2R1000MT33J.pdf Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 800 Stücke:
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800+21.37 EUR
Mindestbestellmenge: 800
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G3R20MT12K G3R20MT12K Navitas Semiconductor, Inc. G3R20MT12K.pdf Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 555 Stücke:
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1+63.54 EUR
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G3R20MT12N G3R20MT12N Navitas Semiconductor, Inc. G3R20MT12N.pdf Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 233 Stücke:
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10+71.49 EUR
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G3R20MT17K G3R20MT17K Navitas Semiconductor, Inc. G3R20MT17K.pdf Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 368 Stücke:
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1+165.04 EUR
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G3R20MT17N G3R20MT17N Navitas Semiconductor, Inc. G3R20MT17N.pdf Description: SIC MOSFET N-CH 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 523W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 105 Stücke:
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1+203.26 EUR
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GBPC5010T Navitas Semiconductor, Inc. gbpc5006t.pdf Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC5010W GBPC5010W Navitas Semiconductor, Inc. gbpc5006t.pdf Description: BRIDGE RECT 1P 1KV 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBU4A GBU4A Navitas Semiconductor, Inc. gbu4a.pdf Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 417 Stücke:
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8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
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GBU4G GBU4G Navitas Semiconductor, Inc. gbu4a.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1710 Stücke:
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12+1.56 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.75 EUR
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GBU4M Navitas Semiconductor, Inc. gbu4j.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBU6M Navitas Semiconductor, Inc. gbu6j.pdf Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBU8M Navitas Semiconductor, Inc. gbu8j.pdf Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBP201G KBP201G Navitas Semiconductor, Inc. kbp201g.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBP202G KBP202G Navitas Semiconductor, Inc. kbp201g.pdf Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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KBP203G KBP203G Navitas Semiconductor, Inc. Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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KBP204G KBP204G Navitas Semiconductor, Inc. kbp201g.pdf Description: BRIDGE RECT 1PHASE 400V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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KBP206G KBP206G Navitas Semiconductor, Inc. kbp206g.pdf description Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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KBP208G KBP208G Navitas Semiconductor, Inc. kbp206g.pdf Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 441 Stücke:
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13+1.46 EUR
20+0.91 EUR
100+0.59 EUR
Mindestbestellmenge: 13
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KBP210G KBP210G Navitas Semiconductor, Inc. kbp206g.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC2510T KBPC2510T Navitas Semiconductor, Inc. kbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC2510W KBPC2510W Navitas Semiconductor, Inc. kbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.87 EUR
50+4.1 EUR
100+3.73 EUR
500+3.1 EUR
1000+2.91 EUR
Mindestbestellmenge: 3
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KBPC3504W KBPC3504W Navitas Semiconductor, Inc. kbpc35005t.pdf Description: BRIDGE RECT 1P 400V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.31 EUR
50+4.35 EUR
100+3.96 EUR
Mindestbestellmenge: 3
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KBPC3510T KBPC3510T Navitas Semiconductor, Inc. kbpc3506t.pdf Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC5010T KBPC5010T Navitas Semiconductor, Inc. kbpc5006t.pdf Description: BRIDGE RECT 1P 1KV 50A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1476 Stücke:
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3+8.59 EUR
50+4.51 EUR
100+4.12 EUR
500+3.43 EUR
1000+3.28 EUR
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KBPC5010W KBPC5010W Navitas Semiconductor, Inc. kbpc5006t.pdf Description: BRIDGE RECT 1P 1KV 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBU8M KBU8M Navitas Semiconductor, Inc. kbu8j.pdf Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 4998 Stücke:
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6+3.41 EUR
10+2.19 EUR
400+1.23 EUR
800+1.12 EUR
1200+1.07 EUR
2000+1.01 EUR
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MBR3545 MBR3545 Navitas Semiconductor, Inc. mbr3560.pdf Description: DIODE SCHOTTKY 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR3545R Navitas Semiconductor, Inc. mbr3560.pdf Description: DIODE SCHOTTKY REV 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBR60100 Navitas Semiconductor, Inc. mbr60100.pdf Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR60100R Navitas Semiconductor, Inc. mbr60100.pdf Description: DIODE SCHOTTKY REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR6060 Navitas Semiconductor, Inc. mbr60100.pdf Description: DIODE SCHOTTKY 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR6060R Navitas Semiconductor, Inc. mbr60100.pdf Description: DIODE SCHOTTKY REV 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MUR2X060A02 MUR2X060A02 Navitas Semiconductor, Inc. mur2x060a02.pdf Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
auf Bestellung 25 Stücke:
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1+73.46 EUR
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NV6113 NV6113 Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)
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10+3.47 EUR
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NV6113 NV6113 Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6113-RA NV6113-RA Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1029 Stücke:
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10+3.47 EUR
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NV6113-RA NV6113-RA Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6115 NV6115 Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
auf Bestellung 4743 Stücke:
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1000+3.8 EUR
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NV6115 NV6115 Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6115-RA NV6115-RA Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
auf Bestellung 1000 Stücke:
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1000+2.77 EUR
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NV6115-RA NV6115-RA Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
auf Bestellung 1276 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.18 EUR
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NV6117 NV6117 Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV6117 NV6117 Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
auf Bestellung 863 Stücke:
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10+6.87 EUR
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NV6117-RA NV6117-RA Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117-RA NV6117-RA Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
auf Bestellung 955 Stücke:
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NV6123 NV6123 Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
Produkt ist nicht verfügbar
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NV6123 NV6123 Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
auf Bestellung 4970 Stücke:
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3+8.17 EUR
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NV6123-RA NV6123-RA Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1000 Stücke:
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1000+1.86 EUR
Mindestbestellmenge: 1000
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NV6123-RA NV6123-RA Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1635 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.33 EUR
10+4.79 EUR
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100+3.92 EUR
250+3.72 EUR
500+3.34 EUR
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NV6125 NV6125 Navitas Semiconductor, Inc. NV6125-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 8 A
Voltage: 650 V
auf Bestellung 4749 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.18 EUR
10+6.46 EUR
25+6.11 EUR
100+5.29 EUR
250+5.02 EUR
500+4.51 EUR
1000+3.8 EUR
2500+3.61 EUR
Mindestbestellmenge: 3
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NV6125 NV6125 Navitas Semiconductor, Inc. NV6125-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
Produkt ist nicht verfügbar
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1N3883 1n3879.pdf
1N3883
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 400V 6A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.89 EUR
10+9.51 EUR
Mindestbestellmenge: 2
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2W10M 2W005M-2W10M.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 2A WOM
Packaging: Bulk
Package / Case: 4-Circular, WOM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOM
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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BR1010 br1010.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 10A BR-10
Packaging: Bulk
Package / Case: 4-Square, BR-10
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: BR-10
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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BR810 br86.pdf
BR810
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 8A BR-8
Packaging: Bulk
Package / Case: 4-Square, BR-8
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: BR-8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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DB105G db105g.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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DB106G db105g.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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DB107G db105g.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 1A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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DB157G description db155g.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 1.5A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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G2R1000MT33J-TR G2R1000MT33J.pdf
G2R1000MT33J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 1211 Stücke:
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Anzahl Preis
1+36.08 EUR
10+26.16 EUR
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G2R1000MT33J-TR G2R1000MT33J.pdf
G2R1000MT33J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+21.37 EUR
Mindestbestellmenge: 800
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G3R20MT12K G3R20MT12K.pdf
G3R20MT12K
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.54 EUR
30+43.45 EUR
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G3R20MT12N G3R20MT12N.pdf
G3R20MT12N
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 233 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+93.4 EUR
10+71.49 EUR
100+69.79 EUR
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G3R20MT17K G3R20MT17K.pdf
G3R20MT17K
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+165.04 EUR
30+138.62 EUR
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G3R20MT17N G3R20MT17N.pdf
G3R20MT17N
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 523W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+203.26 EUR
10+177.52 EUR
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GBPC5010T gbpc5006t.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 50A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC5010W gbpc5006t.pdf
GBPC5010W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBU4A gbu4a.pdf
GBU4A
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
Mindestbestellmenge: 8
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GBU4G gbu4a.pdf
GBU4G
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.75 EUR
Mindestbestellmenge: 8
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GBU4M gbu4j.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBU6M gbu6j.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBU8M gbu8j.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBP201G kbp201g.pdf
KBP201G
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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KBP202G kbp201g.pdf
KBP202G
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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KBP203G
KBP203G
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 200V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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KBP204G kbp201g.pdf
KBP204G
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 400V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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KBP206G description kbp206g.pdf
KBP206G
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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KBP208G kbp206g.pdf
KBP208G
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 800V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
20+0.91 EUR
100+0.59 EUR
Mindestbestellmenge: 13
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KBP210G kbp206g.pdf
KBP210G
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC2510T kbpc2506t.pdf
KBPC2510T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 25A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC2510W kbpc2506t.pdf
KBPC2510W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.87 EUR
50+4.1 EUR
100+3.73 EUR
500+3.1 EUR
1000+2.91 EUR
Mindestbestellmenge: 3
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KBPC3504W kbpc35005t.pdf
KBPC3504W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 400V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.31 EUR
50+4.35 EUR
100+3.96 EUR
Mindestbestellmenge: 3
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KBPC3510T kbpc3506t.pdf
KBPC3510T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 35A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBPC5010T kbpc5006t.pdf
KBPC5010T
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 50A KBPC-T
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-T
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1476 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.59 EUR
50+4.51 EUR
100+4.12 EUR
500+3.43 EUR
1000+3.28 EUR
Mindestbestellmenge: 3
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KBPC5010W kbpc5006t.pdf
KBPC5010W
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1P 1KV 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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KBU8M kbu8j.pdf
KBU8M
Hersteller: Navitas Semiconductor, Inc.
Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.19 EUR
400+1.23 EUR
800+1.12 EUR
1200+1.07 EUR
2000+1.01 EUR
Mindestbestellmenge: 6
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MBR3545 mbr3560.pdf
MBR3545
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR3545R mbr3560.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR60100 mbr60100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR60100R mbr60100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR6060 mbr60100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR6060R mbr60100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MUR2X060A02 mur2x060a02.pdf
MUR2X060A02
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+73.46 EUR
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NV6113 NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.62 EUR
1000+2.54 EUR
Mindestbestellmenge: 4
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NV6113 NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6113-RA NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.62 EUR
Mindestbestellmenge: 4
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NV6113-RA NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6115 NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
auf Bestellung 4743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.18 EUR
10+6.46 EUR
25+6.11 EUR
100+5.29 EUR
250+5.02 EUR
500+4.51 EUR
1000+3.8 EUR
2500+3.61 EUR
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NV6115 NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6115-RA NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115-RA
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.77 EUR
Mindestbestellmenge: 1000
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NV6115-RA NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115-RA
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
auf Bestellung 1276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.18 EUR
10+6.46 EUR
25+6.11 EUR
100+5.29 EUR
250+5.02 EUR
500+4.51 EUR
Mindestbestellmenge: 3
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NV6117 NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117 NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.98 EUR
10+6.87 EUR
25+6.35 EUR
100+5.77 EUR
250+5.5 EUR
500+5.33 EUR
Mindestbestellmenge: 2
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NV6117-RA NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117-RA NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.98 EUR
10+6.87 EUR
25+6.35 EUR
100+5.77 EUR
250+5.5 EUR
500+5.33 EUR
Mindestbestellmenge: 2
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NV6123 NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
Produkt ist nicht verfügbar
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NV6123 NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.17 EUR
10+7.34 EUR
25+6.94 EUR
100+6.02 EUR
250+5.71 EUR
500+5.12 EUR
1000+4.32 EUR
2500+4.1 EUR
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NV6123-RA NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123-RA
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.86 EUR
Mindestbestellmenge: 1000
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NV6123-RA NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123-RA
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.33 EUR
10+4.79 EUR
25+4.52 EUR
100+3.92 EUR
250+3.72 EUR
500+3.34 EUR
Mindestbestellmenge: 4
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NV6125 NV6125-Datasheet-FINAL-04-11-22.pdf
NV6125
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 8 A
Voltage: 650 V
auf Bestellung 4749 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.18 EUR
10+6.46 EUR
25+6.11 EUR
100+5.29 EUR
250+5.02 EUR
500+4.51 EUR
1000+3.8 EUR
2500+3.61 EUR
Mindestbestellmenge: 3
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NV6125 NV6125-Datasheet-FINAL-04-11-22.pdf
NV6125
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
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