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MBR200100CTR Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR200100CTS MBR200100CTS Navitas Semiconductor, Inc. MBR200100CTS.pdf Description: DIODE MOD SCHOT 100V 200A SOT227
Packaging: Tube
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Produkt ist nicht verfügbar
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MBR200150CT Navitas Semiconductor, Inc. mbr200150ct.pdf Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
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MBR200150CTR Navitas Semiconductor, Inc. mbr200150ct.pdf Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
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MBR200200CT Navitas Semiconductor, Inc. mbr200150ct.pdf Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
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MBR200200CTR Navitas Semiconductor, Inc. mbr200150ct.pdf Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
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MBR20020CT Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20020CTR Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20030CT MBR20030CT Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20030CTR MBR20030CTR Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20035CT Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20035CTR Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20040CT Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20040CTR Navitas Semiconductor, Inc. mbr20020ct.pdf Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20045CT Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20045CTR Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20060CT Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20060CTR Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20080CT Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20080CTR Navitas Semiconductor, Inc. mbr200100ct.pdf Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR2X030A100 MBR2X030A100 Navitas Semiconductor, Inc. mbr2x030a100.pdf Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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MBR3545 MBR3545 Navitas Semiconductor, Inc. mbr3560.pdf Description: DIODE SCHOTTKY 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR3545R Navitas Semiconductor, Inc. mbr3560.pdf Description: DIODE SCHOTTKY REV 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR60100 Navitas Semiconductor, Inc. mbr60100.pdf Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR60100R Navitas Semiconductor, Inc. mbr60100.pdf Description: DIODE SCHOTTKY REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR6060 Navitas Semiconductor, Inc. mbr60100.pdf Description: DIODE SCHOTTKY 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR6060R Navitas Semiconductor, Inc. mbr60100.pdf Description: DIODE SCHOTTKY REV 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR80100 Navitas Semiconductor, Inc. mbr80100.pdf Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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MBR80100R Navitas Semiconductor, Inc. mbr80100.pdf Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBRF600200 MBRF600200 Navitas Semiconductor, Inc. Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
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MBRF600200R MBRF600200R Navitas Semiconductor, Inc. Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
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MBRF60020R MBRF60020R Navitas Semiconductor, Inc. Description: DIODE MOD SCHOT 20V 300A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Produkt ist nicht verfügbar
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MUR2X030A10 MUR2X030A10 Navitas Semiconductor, Inc. mur2x030a10.pdf Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Produkt ist nicht verfügbar
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MUR2X060A02 MUR2X060A02 Navitas Semiconductor, Inc. mur2x060a02.pdf Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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NV6113 NV6113 Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)
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10+3.47 EUR
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250+2.71 EUR
500+2.62 EUR
1000+2.54 EUR
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NV6113 NV6113 Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6113-RA NV6113-RA Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV6113-RA NV6113-RA Navitas Semiconductor, Inc. NV6113-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)
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NV6115 NV6115 Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6115 NV6115 Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
auf Bestellung 4743 Stücke:
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NV6115-RA NV6115-RA Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
auf Bestellung 1000 Stücke:
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NV6115-RA NV6115-RA Navitas Semiconductor, Inc. NV6115-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
auf Bestellung 1276 Stücke:
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NV6117 NV6117 Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117 NV6117 Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
auf Bestellung 863 Stücke:
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NV6117-RA NV6117-RA Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117-RA NV6117-RA Navitas Semiconductor, Inc. NV6117-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.98 EUR
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NV6123 NV6123 Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.17 EUR
10+7.34 EUR
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1000+4.32 EUR
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NV6123 NV6123 Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
Produkt ist nicht verfügbar
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NV6123-RA NV6123-RA Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1635 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.33 EUR
10+4.79 EUR
25+4.52 EUR
100+3.92 EUR
250+3.72 EUR
500+3.34 EUR
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NV6123-RA NV6123-RA Navitas Semiconductor, Inc. NV6123-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1000 Stücke:
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1000+1.86 EUR
Mindestbestellmenge: 1000
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NV6125 NV6125 Navitas Semiconductor, Inc. NV6125-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 8 A
Voltage: 650 V
auf Bestellung 4749 Stücke:
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500+4.51 EUR
1000+3.8 EUR
2500+3.61 EUR
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NV6125 NV6125 Navitas Semiconductor, Inc. NV6125-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6125-RA NV6125-RA Navitas Semiconductor, Inc. NV6125-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
auf Bestellung 1000 Stücke:
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NV6125-RA NV6125-RA Navitas Semiconductor, Inc. NV6125-Datasheet-FINAL-04-11-22.pdf Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
auf Bestellung 1705 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.02 EUR
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NV6127 NV6127 Navitas Semiconductor, Inc. NV6127-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6127 NV6127 Navitas Semiconductor, Inc. NV6127-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
auf Bestellung 3656 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.98 EUR
10+6.87 EUR
25+6.35 EUR
100+5.77 EUR
250+5.5 EUR
500+5.33 EUR
1000+5.2 EUR
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NV6127-RA NV6127-RA Navitas Semiconductor, Inc. NV6127-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.91 EUR
10+6.82 EUR
25+6.3 EUR
100+5.73 EUR
250+5.46 EUR
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NV6127-RA NV6127-RA Navitas Semiconductor, Inc. NV6127-Datasheet-FINAL-04-11-22.pdf Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6128 NV6128 Navitas Semiconductor, Inc. NV6128-Datasheet-FINAL-10-11-22.pdf Description: GANFAST SINGLE, 650V, 70MOHMS, P
Features: PWM Input, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High/Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Current: 20 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6128 NV6128 Navitas Semiconductor, Inc. NV6128-Datasheet-FINAL-10-11-22.pdf Description: GANFAST SINGLE, 650V, 70MOHMS, P
Features: PWM Input, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High/Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Current: 20 A
Voltage: 650 V
auf Bestellung 3195 Stücke:
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MBR200100CTR mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR200100CTS MBR200100CTS.pdf
MBR200100CTS
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 100V 200A SOT227
Packaging: Tube
Package / Case: SOT-227-4
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 80 V
Produkt ist nicht verfügbar
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MBR200150CT mbr200150ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
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MBR200150CTR mbr200150ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 150V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 150 V
Produkt ist nicht verfügbar
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MBR200200CT mbr200150ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
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MBR200200CTR mbr200150ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 200V 100A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
Produkt ist nicht verfügbar
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MBR20020CT mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20020CTR mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 20V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20030CT mbr20020ct.pdf
MBR20030CT
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20030CTR mbr20020ct.pdf
MBR20030CTR
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 30V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20035CT mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20035CTR mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20040CT mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20040CTR mbr20020ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 40V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20045CT mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20045CTR mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20060CT mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20060CTR mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20080CT mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR20080CTR mbr200100ct.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 80V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR2X030A100 mbr2x030a100.pdf
MBR2X030A100
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 100V 60A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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MBR3545 mbr3560.pdf
MBR3545
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR3545R mbr3560.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 45V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR60100 mbr60100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR60100R mbr60100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR6060 mbr60100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR6060R mbr60100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 60V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBR80100 mbr80100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Produkt ist nicht verfügbar
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MBR80100R mbr80100.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE SCHOTTKY REV 100V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 80 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Produkt ist nicht verfügbar
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MBRF600200
MBRF600200
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF600200R
MBRF600200R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTTKY 200V TO-244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
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MBRF60020R
MBRF60020R
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOT 20V 300A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: TO-244AB
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 300 A
Current - Reverse Leakage @ Vr: 10 mA @ 20 V
Produkt ist nicht verfügbar
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MUR2X030A10 mur2x030a10.pdf
MUR2X030A10
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 1000V 30A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.35 V @ 30 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Produkt ist nicht verfügbar
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MUR2X060A02 mur2x060a02.pdf
MUR2X060A02
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MODULE GP 200V 60A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+73.46 EUR
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NV6113 NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.62 EUR
1000+2.54 EUR
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NV6113 NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6113-RA NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6113-RA NV6113-Datasheet-FINAL-04-11-22.pdf
NV6113-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 5A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1029 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.62 EUR
Mindestbestellmenge: 4
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NV6115 NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6115 NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 8 A
Voltage: 650 V
auf Bestellung 4743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.18 EUR
10+6.46 EUR
25+6.11 EUR
100+5.29 EUR
250+5.02 EUR
500+4.51 EUR
1000+3.8 EUR
2500+3.61 EUR
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NV6115-RA NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115-RA
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.77 EUR
Mindestbestellmenge: 1000
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NV6115-RA NV6115-Datasheet-FINAL-04-11-22.pdf
NV6115-RA
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 170mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
auf Bestellung 1276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.18 EUR
10+6.46 EUR
25+6.11 EUR
100+5.29 EUR
250+5.02 EUR
500+4.51 EUR
Mindestbestellmenge: 3
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NV6117 NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117 NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Current: 12 A
Voltage: 650 V
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.98 EUR
10+6.87 EUR
25+6.35 EUR
100+5.77 EUR
250+5.5 EUR
500+5.33 EUR
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NV6117-RA NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6117-RA NV6117-Datasheet-FINAL-04-11-22.pdf
NV6117-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 8-PWRVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 120mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-QFN (5x6)
Part Status: Active
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
auf Bestellung 955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.98 EUR
10+6.87 EUR
25+6.35 EUR
100+5.77 EUR
250+5.5 EUR
500+5.33 EUR
Mindestbestellmenge: 2
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NV6123 NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.17 EUR
10+7.34 EUR
25+6.94 EUR
100+6.02 EUR
250+5.71 EUR
500+5.12 EUR
1000+4.32 EUR
2500+4.1 EUR
Mindestbestellmenge: 3
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NV6123 NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
Produkt ist nicht verfügbar
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NV6123-RA NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123-RA
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.33 EUR
10+4.79 EUR
25+4.52 EUR
100+3.92 EUR
250+3.72 EUR
500+3.34 EUR
Mindestbestellmenge: 4
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NV6123-RA NV6123-Datasheet-FINAL-04-11-22.pdf
NV6123-RA
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 5 A
Voltage: 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.86 EUR
Mindestbestellmenge: 1000
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NV6125 NV6125-Datasheet-FINAL-04-11-22.pdf
NV6125
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Current: 8 A
Voltage: 650 V
auf Bestellung 4749 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.18 EUR
10+6.46 EUR
25+6.11 EUR
100+5.29 EUR
250+5.02 EUR
500+4.51 EUR
1000+3.8 EUR
2500+3.61 EUR
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NV6125 NV6125-Datasheet-FINAL-04-11-22.pdf
NV6125
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 8 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6125-RA NV6125-Datasheet-FINAL-04-11-22.pdf
NV6125-RA
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.7 EUR
Mindestbestellmenge: 1000
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NV6125-RA NV6125-Datasheet-FINAL-04-11-22.pdf
NV6125-RA
Hersteller: Navitas Semiconductor, Inc.
Description: IC PWR GANFAST N-CH 1:1 30QFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 175mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Part Status: Active
auf Bestellung 1705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.02 EUR
10+6.31 EUR
25+5.96 EUR
100+5.17 EUR
250+4.9 EUR
500+4.4 EUR
Mindestbestellmenge: 3
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NV6127 NV6127-Datasheet-FINAL-04-11-22.pdf
NV6127
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6127 NV6127-Datasheet-FINAL-04-11-22.pdf
NV6127
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
auf Bestellung 3656 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.98 EUR
10+6.87 EUR
25+6.35 EUR
100+5.77 EUR
250+5.5 EUR
500+5.33 EUR
1000+5.2 EUR
2500+5.05 EUR
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NV6127-RA NV6127-Datasheet-FINAL-04-11-22.pdf
NV6127-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.91 EUR
10+6.82 EUR
25+6.3 EUR
100+5.73 EUR
250+5.46 EUR
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NV6127-RA NV6127-Datasheet-FINAL-04-11-22.pdf
NV6127-RA
Hersteller: Navitas Semiconductor, Inc.
Description: MOSFET IPM 650V 12A 30-PWRVQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TC)
Output Configuration: High Side or Low Side
Rds On (Typ): 125mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Type: MOSFET
Configuration: Half Bridge
Current: 12 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6128 NV6128-Datasheet-FINAL-10-11-22.pdf
NV6128
Hersteller: Navitas Semiconductor, Inc.
Description: GANFAST SINGLE, 650V, 70MOHMS, P
Features: PWM Input, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High/Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Current: 20 A
Voltage: 650 V
Produkt ist nicht verfügbar
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NV6128 NV6128-Datasheet-FINAL-10-11-22.pdf
NV6128
Hersteller: Navitas Semiconductor, Inc.
Description: GANFAST SINGLE, 650V, 70MOHMS, P
Features: PWM Input, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 30-PowerVQFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Output Configuration: High/Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 30-QFN (6x8)
Fault Protection: Over Temperature, Short Circuit
Part Status: Active
Current: 20 A
Voltage: 650 V
auf Bestellung 3195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.53 EUR
10+11.23 EUR
25+9.85 EUR
100+8.29 EUR
250+7.62 EUR
Mindestbestellmenge: 2
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