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FR6J05 Navitas Semiconductor, Inc. fr6m05.pdf Description: DIODE STANDARD 600V 6A DO4
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FR6JR02 Navitas Semiconductor, Inc. fr6a02.pdf Description: DIODE STANDARD REV 600V 6A DO4
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FR6JR05 Navitas Semiconductor, Inc. fr6m05.pdf Description: DIODE STANDARD REV 600V 6A DO4
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FR6K05 Navitas Semiconductor, Inc. fr6m05.pdf Description: DIODE STANDARD 800V 6A DO4
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FR6KR05 Navitas Semiconductor, Inc. fr6m05.pdf Description: DIODE STANDARD REV 800V 6A DO4
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FR6M05 Navitas Semiconductor, Inc. fr6m05.pdf Description: DIODE STANDARD 1000V 6A DO4
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FR6MR05 Navitas Semiconductor, Inc. fr6m05.pdf Description: DIODE STANDARD REV 1000V 6A DO4
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FST7335M FST7335M Navitas Semiconductor, Inc. FST7335M.pdf Description: DIODE MOD SCHOTT 35V 35A D61-3M
Packaging: Bulk
Package / Case: D61-3M
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: D61-3M
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 35 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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G2R1000MT17D G2R1000MT17D Navitas Semiconductor, Inc. G2R1000MT17D.pdf Description: SIC MOSFET N-CH 4A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 1000 V
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G2R1000MT17J G2R1000MT17J Navitas Semiconductor, Inc. G2R1000MT17J.pdf Description: SIC MOSFET N-CH 3A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
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G2R1000MT17J-TR G2R1000MT17J-TR Navitas Semiconductor, Inc. G2R1000MT17J.pdf Description: 1700V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
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G2R1000MT17J-TR G2R1000MT17J-TR Navitas Semiconductor, Inc. G2R1000MT17J.pdf Description: 1700V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
auf Bestellung 438 Stücke:
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G2R1000MT33J G2R1000MT33J Navitas Semiconductor, Inc. G2R1000MT33J.pdf Description: SIC MOSFET N-CH 4A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
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G2R1000MT33J-TR G2R1000MT33J-TR Navitas Semiconductor, Inc. G2R1000MT33J.pdf Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 800 Stücke:
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G2R1000MT33J-TR G2R1000MT33J-TR Navitas Semiconductor, Inc. G2R1000MT33J.pdf Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 802 Stücke:
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G2R50MT33K G2R50MT33K Navitas Semiconductor, Inc. G2R50MT33K.pdf Description: 3300V 50M TO-247-4 SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
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G3F135MT12J-TR G3F135MT12J-TR Navitas Semiconductor, Inc. G3F135MT12J.pdf Description: 1200V 135M TO-263-7 G3F SIC MOSF
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G3F135MT12J-TR G3F135MT12J-TR Navitas Semiconductor, Inc. G3F135MT12J.pdf Description: 1200V 135M TO-263-7 G3F SIC MOSF
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G3F18MT12J-TR G3F18MT12J-TR Navitas Semiconductor, Inc. G3F18MT12J.pdf Description: 1200V 18M TO-263-7 G3F SIC MOSFE
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G3F18MT12J-TR G3F18MT12J-TR Navitas Semiconductor, Inc. G3F18MT12J.pdf Description: 1200V 18M TO-263-7 G3F SIC MOSFE
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G3F18MT12K Navitas Semiconductor, Inc. Description: 1200V 18M TO-247-4 G3F SIC MOSFE
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G3F20MT12J-TR G3F20MT12J-TR Navitas Semiconductor, Inc. G3F20MT12J.pdf Description: 1200V 20M TO-263-7 G3F SIC MOSFE
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G3F20MT12J-TR G3F20MT12J-TR Navitas Semiconductor, Inc. G3F20MT12J.pdf Description: 1200V 20M TO-263-7 G3F SIC MOSFE
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G3F25MT12J-TR G3F25MT12J-TR Navitas Semiconductor, Inc. G3F25MT12J.pdf Description: 1200V 25M TO-263-7 G3F SIC MOSFE
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G3F25MT12J-TR G3F25MT12J-TR Navitas Semiconductor, Inc. G3F25MT12J.pdf Description: 1200V 25M TO-263-7 G3F SIC MOSFE
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G3F320MT12J-TR Navitas Semiconductor, Inc. Description: 1200V 320M TO-263-7 G3F SIC MOSF
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G3F320MT12J-TR Navitas Semiconductor, Inc. Description: 1200V 320M TO-263-7 G3F SIC MOSF
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G3F34MT12J-TR G3F34MT12J-TR Navitas Semiconductor, Inc. G3F34MT12J.pdf Description: 1200V 34M TO-263-7 G3F SIC MOSFE
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G3F34MT12J-TR G3F34MT12J-TR Navitas Semiconductor, Inc. G3F34MT12J.pdf Description: 1200V 34M TO-263-7 G3F SIC MOSFE
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G3F40MT12J-TR G3F40MT12J-TR Navitas Semiconductor, Inc. G3F40MT12J.pdf Description: 1200V 40M TO-263-7 G3F SIC MOSFE
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G3F40MT12J-TR G3F40MT12J-TR Navitas Semiconductor, Inc. G3F40MT12J.pdf Description: 1200V 40M TO-263-7 G3F SIC MOSFE
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G3F40MT12K G3F40MT12K Navitas Semiconductor, Inc. G3F40MT12K.pdf Description: 1200V 40M TO-247-4 G3F SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 102 Stücke:
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G3F65MT12J-TR G3F65MT12J-TR Navitas Semiconductor, Inc. G3F65MT12J.pdf Description: 1200V 65M TO-263-7 G3F SIC MOSFE
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G3F65MT12J-TR G3F65MT12J-TR Navitas Semiconductor, Inc. G3F65MT12J.pdf Description: 1200V 65M TO-263-7 G3F SIC MOSFE
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G3F75MT12J-TR G3F75MT12J-TR Navitas Semiconductor, Inc. G3F75MT12J.pdf Description: 1200V 75M TO-263-7 G3F SIC MOSFE
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G3F75MT12J-TR G3F75MT12J-TR Navitas Semiconductor, Inc. G3F75MT12J.pdf Description: 1200V 75M TO-263-7 G3F SIC MOSFE
auf Bestellung 664 Stücke:
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100+10.95 EUR
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G3R12MT12K G3R12MT12K Navitas Semiconductor, Inc. G3R12MT12K.pdf Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
auf Bestellung 1533 Stücke:
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G3R160MT12D G3R160MT12D Navitas Semiconductor, Inc. G3R160MT12D.pdf Description: SIC MOSFET N-CH 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
auf Bestellung 347 Stücke:
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30+10.14 EUR
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G3R160MT12J G3R160MT12J Navitas Semiconductor, Inc. G3R160MT12J.pdf Description: SIC MOSFET N-CH 19A TO263-7
Produkt ist nicht verfügbar
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G3R160MT12J-TR G3R160MT12J-TR Navitas Semiconductor, Inc. G3R160MT12J.pdf Description: 1200V 160M TO-263-7 G3R SIC MOSF
auf Bestellung 1600 Stücke:
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800+9.15 EUR
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G3R160MT12J-TR G3R160MT12J-TR Navitas Semiconductor, Inc. G3R160MT12J.pdf Description: 1200V 160M TO-263-7 G3R SIC MOSF
auf Bestellung 2010 Stücke:
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G3R160MT17D G3R160MT17D Navitas Semiconductor, Inc. G3R160MT17D.pdf Description: SIC MOSFET N-CH 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
auf Bestellung 738 Stücke:
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1+32.51 EUR
30+20.09 EUR
120+17.36 EUR
510+16.27 EUR
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G3R20MT12K G3R20MT12K Navitas Semiconductor, Inc. G3R20MT12K.pdf Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 239 Stücke:
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G3R20MT12N G3R20MT12N Navitas Semiconductor, Inc. G3R20MT12N.pdf Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 213 Stücke:
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G3R20MT17K G3R20MT17K Navitas Semiconductor, Inc. G3R20MT17K.pdf Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 355 Stücke:
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G3R20MT17N G3R20MT17N Navitas Semiconductor, Inc. G3R20MT17N.pdf Description: SIC MOSFET N-CH 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 523W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
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G3R30MT12J G3R30MT12J Navitas Semiconductor, Inc. G3R30MT12J.pdf Description: SIC MOSFET N-CH 96A TO263-7
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G3R30MT12J-TR G3R30MT12J-TR Navitas Semiconductor, Inc. G3R30MT12J.pdf Description: 1200V 30M TO-263-7 G3R SIC MOSFE
Produkt ist nicht verfügbar
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G3R30MT12J-TR G3R30MT12J-TR Navitas Semiconductor, Inc. G3R30MT12J.pdf Description: 1200V 30M TO-263-7 G3R SIC MOSFE
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G3R30MT12K G3R30MT12K Navitas Semiconductor, Inc. G3R30MT12K.pdf Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
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G3R350MT12D G3R350MT12D Navitas Semiconductor, Inc. G3R350MT12D.pdf Description: SIC MOSFET N-CH 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
auf Bestellung 6258 Stücke:
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120+6.35 EUR
510+5.49 EUR
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G3R350MT12J G3R350MT12J Navitas Semiconductor, Inc. G3R350MT12J.pdf Description: SIC MOSFET N-CH 11A TO263-7
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G3R350MT12J-TR G3R350MT12J-TR Navitas Semiconductor, Inc. G3R350MT12J.pdf Description: 1200V 350M TO-263-7 G3R SIC MOSF
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G3R350MT12J-TR G3R350MT12J-TR Navitas Semiconductor, Inc. G3R350MT12J.pdf Description: 1200V 350M TO-263-7 G3R SIC MOSF
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G3R40MT12D G3R40MT12D Navitas Semiconductor, Inc. G3R40MT12D.pdf Description: SIC MOSFET N-CH 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
auf Bestellung 1748 Stücke:
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G3R40MT12J G3R40MT12J Navitas Semiconductor, Inc. G3R40MT12J.pdf Description: SIC MOSFET N-CH 75A TO263-7
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G3R40MT12J-TR G3R40MT12J-TR Navitas Semiconductor, Inc. G3R40MT12J.pdf Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
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G3R40MT12J-TR G3R40MT12J-TR Navitas Semiconductor, Inc. G3R40MT12J.pdf Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
auf Bestellung 620 Stücke:
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G3R40MT12K G3R40MT12K Navitas Semiconductor, Inc. G3R40MT12K.pdf Description: SIC MOSFET N-CH 71A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
auf Bestellung 1248 Stücke:
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G3R450MT17J-TR G3R450MT17J-TR Navitas Semiconductor, Inc. G3R450MT17J.pdf Description: 1700V 450M TO-263-7 G3R SIC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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FR6J05 fr6m05.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 600V 6A DO4
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FR6JR02 fr6a02.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD REV 600V 6A DO4
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FR6JR05 fr6m05.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD REV 600V 6A DO4
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FR6K05 fr6m05.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 800V 6A DO4
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FR6KR05 fr6m05.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD REV 800V 6A DO4
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FR6M05 fr6m05.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD 1000V 6A DO4
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FR6MR05 fr6m05.pdf
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE STANDARD REV 1000V 6A DO4
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FST7335M FST7335M.pdf
FST7335M
Hersteller: Navitas Semiconductor, Inc.
Description: DIODE MOD SCHOTT 35V 35A D61-3M
Packaging: Bulk
Package / Case: D61-3M
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 35A
Supplier Device Package: D61-3M
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 35 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
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G2R1000MT17D G2R1000MT17D.pdf
G2R1000MT17D
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 4A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 1000 V
Produkt ist nicht verfügbar
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G2R1000MT17J G2R1000MT17J.pdf
G2R1000MT17J
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 3A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
Produkt ist nicht verfügbar
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G2R1000MT17J-TR G2R1000MT17J.pdf
G2R1000MT17J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1700V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
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G2R1000MT17J-TR G2R1000MT17J.pdf
G2R1000MT17J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1700V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
auf Bestellung 438 Stücke:
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AnzahlPrivatkunde
2+18.3 EUR
10+12.57 EUR
100+9.33 EUR
Mindestbestellmenge: 2 Stücke
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G2R1000MT33J G2R1000MT33J.pdf
G2R1000MT33J
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 4A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
Produkt ist nicht verfügbar
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G2R1000MT33J-TR G2R1000MT33J.pdf
G2R1000MT33J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 800 Stücke:
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AnzahlPrivatkunde
800+25.81 EUR
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G2R1000MT33J-TR G2R1000MT33J.pdf
G2R1000MT33J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 802 Stücke:
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G2R50MT33K G2R50MT33K.pdf
G2R50MT33K
Hersteller: Navitas Semiconductor, Inc.
Description: 3300V 50M TO-247-4 SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
auf Bestellung 232 Stücke:
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30+478.56 EUR
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G3F135MT12J-TR G3F135MT12J.pdf
G3F135MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 135M TO-263-7 G3F SIC MOSF
Produkt ist nicht verfügbar
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G3F135MT12J-TR G3F135MT12J.pdf
G3F135MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 135M TO-263-7 G3F SIC MOSF
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2+17.86 EUR
10+12.23 EUR
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G3F18MT12J-TR G3F18MT12J.pdf
G3F18MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 18M TO-263-7 G3F SIC MOSFE
Produkt ist nicht verfügbar
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G3F18MT12J-TR G3F18MT12J.pdf
G3F18MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 18M TO-263-7 G3F SIC MOSFE
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1+55.61 EUR
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G3F18MT12K
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 18M TO-247-4 G3F SIC MOSFE
auf Bestellung 161 Stücke:
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1+58.89 EUR
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G3F20MT12J-TR G3F20MT12J.pdf
G3F20MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 20M TO-263-7 G3F SIC MOSFE
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G3F20MT12J-TR G3F20MT12J.pdf
G3F20MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 20M TO-263-7 G3F SIC MOSFE
Produkt ist nicht verfügbar
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G3F25MT12J-TR G3F25MT12J.pdf
G3F25MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 25M TO-263-7 G3F SIC MOSFE
Produkt ist nicht verfügbar
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G3F25MT12J-TR G3F25MT12J.pdf
G3F25MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 25M TO-263-7 G3F SIC MOSFE
auf Bestellung 374 Stücke:
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1+39.16 EUR
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G3F320MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 320M TO-263-7 G3F SIC MOSF
auf Bestellung 800 Stücke:
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AnzahlPrivatkunde
800+6.58 EUR
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G3F320MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 320M TO-263-7 G3F SIC MOSF
auf Bestellung 800 Stücke:
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2+16.17 EUR
10+11.02 EUR
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G3F34MT12J-TR G3F34MT12J.pdf
G3F34MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 34M TO-263-7 G3F SIC MOSFE
auf Bestellung 800 Stücke:
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1+36.4 EUR
10+25.95 EUR
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G3F34MT12J-TR G3F34MT12J.pdf
G3F34MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 34M TO-263-7 G3F SIC MOSFE
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AnzahlPrivatkunde
800+18.81 EUR
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G3F40MT12J-TR G3F40MT12J.pdf
G3F40MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 40M TO-263-7 G3F SIC MOSFE
Produkt ist nicht verfügbar
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G3F40MT12J-TR G3F40MT12J.pdf
G3F40MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 40M TO-263-7 G3F SIC MOSFE
auf Bestellung 744 Stücke:
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1+28.93 EUR
10+20.36 EUR
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G3F40MT12K G3F40MT12K.pdf
G3F40MT12K
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 40M TO-247-4 G3F SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2023 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 102 Stücke:
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1+29.3 EUR
30+17.95 EUR
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G3F65MT12J-TR G3F65MT12J.pdf
G3F65MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 65M TO-263-7 G3F SIC MOSFE
Produkt ist nicht verfügbar
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G3F65MT12J-TR G3F65MT12J.pdf
G3F65MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 65M TO-263-7 G3F SIC MOSFE
auf Bestellung 621 Stücke:
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1+22.51 EUR
10+15.61 EUR
100+12.36 EUR
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G3F75MT12J-TR G3F75MT12J.pdf
G3F75MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 75M TO-263-7 G3F SIC MOSFE
Produkt ist nicht verfügbar
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G3F75MT12J-TR G3F75MT12J.pdf
G3F75MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 75M TO-263-7 G3F SIC MOSFE
auf Bestellung 664 Stücke:
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2+20.53 EUR
10+14.16 EUR
100+10.95 EUR
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G3R12MT12K G3R12MT12K.pdf
G3R12MT12K
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
auf Bestellung 1533 Stücke:
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AnzahlPrivatkunde
1+131.57 EUR
30+93.61 EUR
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G3R160MT12D G3R160MT12D.pdf
G3R160MT12D
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
auf Bestellung 347 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.17 EUR
30+10.14 EUR
120+8.59 EUR
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G3R160MT12J G3R160MT12J.pdf
G3R160MT12J
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 19A TO263-7
Produkt ist nicht verfügbar
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G3R160MT12J-TR G3R160MT12J.pdf
G3R160MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 160M TO-263-7 G3R SIC MOSF
auf Bestellung 1600 Stücke:
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AnzahlPrivatkunde
800+9.15 EUR
Mindestbestellmenge: 800 Stücke
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G3R160MT12J-TR G3R160MT12J.pdf
G3R160MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 160M TO-263-7 G3R SIC MOSF
auf Bestellung 2010 Stücke:
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AnzahlPrivatkunde
2+20.88 EUR
10+14.42 EUR
100+11.21 EUR
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G3R160MT17D G3R160MT17D.pdf
G3R160MT17D
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
auf Bestellung 738 Stücke:
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AnzahlPrivatkunde
1+32.51 EUR
30+20.09 EUR
120+17.36 EUR
510+16.27 EUR
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G3R20MT12K G3R20MT12K.pdf
G3R20MT12K
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+79.63 EUR
30+53.38 EUR
120+50.88 EUR
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G3R20MT12N G3R20MT12N.pdf
G3R20MT12N
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
auf Bestellung 213 Stücke:
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AnzahlPrivatkunde
1+109.16 EUR
10+83.54 EUR
100+81.55 EUR
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G3R20MT17K G3R20MT17K.pdf
G3R20MT17K
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+213.25 EUR
30+167.41 EUR
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G3R20MT17N G3R20MT17N.pdf
G3R20MT17N
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 523W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
auf Bestellung 105 Stücke:
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AnzahlPrivatkunde
1+241.88 EUR
10+211.25 EUR
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G3R30MT12J G3R30MT12J.pdf
G3R30MT12J
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 96A TO263-7
Produkt ist nicht verfügbar
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G3R30MT12J-TR G3R30MT12J.pdf
G3R30MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 30M TO-263-7 G3R SIC MOSFE
Produkt ist nicht verfügbar
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G3R30MT12J-TR G3R30MT12J.pdf
G3R30MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 30M TO-263-7 G3R SIC MOSFE
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+55.36 EUR
10+40.45 EUR
100+32.06 EUR
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G3R30MT12K G3R30MT12K.pdf
G3R30MT12K
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+54.73 EUR
30+35.4 EUR
120+31.59 EUR
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G3R350MT12D G3R350MT12D.pdf
G3R350MT12D
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
auf Bestellung 6258 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.11 EUR
30+7.57 EUR
120+6.35 EUR
510+5.49 EUR
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G3R350MT12J G3R350MT12J.pdf
G3R350MT12J
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 11A TO263-7
Produkt ist nicht verfügbar
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G3R350MT12J-TR G3R350MT12J.pdf
G3R350MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 350M TO-263-7 G3R SIC MOSF
Produkt ist nicht verfügbar
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G3R350MT12J-TR G3R350MT12J.pdf
G3R350MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 350M TO-263-7 G3R SIC MOSF
Produkt ist nicht verfügbar
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G3R40MT12D G3R40MT12D.pdf
G3R40MT12D
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
auf Bestellung 1748 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+39.52 EUR
30+25.07 EUR
120+23.01 EUR
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G3R40MT12J G3R40MT12J.pdf
G3R40MT12J
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 75A TO263-7
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+45.11 EUR
50+27.22 EUR
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G3R40MT12J-TR G3R40MT12J.pdf
G3R40MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3R40MT12J-TR G3R40MT12J.pdf
G3R40MT12J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
auf Bestellung 620 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+45.11 EUR
10+32.56 EUR
100+25.5 EUR
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G3R40MT12K G3R40MT12K.pdf
G3R40MT12K
Hersteller: Navitas Semiconductor, Inc.
Description: SIC MOSFET N-CH 71A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
auf Bestellung 1248 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+44.46 EUR
30+28.24 EUR
120+24.69 EUR
510+24.29 EUR
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G3R450MT17J-TR G3R450MT17J.pdf
G3R450MT17J-TR
Hersteller: Navitas Semiconductor, Inc.
Description: 1700V 450M TO-263-7 G3R SIC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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