Produkte > NEXPERIA USA INC. > Alle Produkte des Herstellers NEXPERIA USA INC. (32717) > Seite 171 nach 546
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| 74AHC1G14GV | Nexperia USA Inc. |
Description: INVERTER, AHC/VHC/H/U/V SERIES, |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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74LV132PW,118 | Nexperia USA Inc. |
Description: IC GATE NAND 4CH 2-INP 14TSSOPFeatures: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1V ~ 5.5V Current - Output High, Low: 12mA, 12mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.4V ~ 3.9V Input Logic Level - Low: 0.3V ~ 1.2V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 40 µA |
auf Bestellung 12236 Stücke: Lieferzeit 10-14 Tag (e) |
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| 74LV393D | Nexperia USA Inc. |
Description: NOW NEXPERIA 74LV132D - NAND GATPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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BZT52-C33,115 | Nexperia USA Inc. |
Description: ZENER DIODE, 33V, 5%, 0.41W, SILPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZT52-C33,118 | Nexperia USA Inc. |
Description: ZENER DIODEPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BUK7M42-60EX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 20A LFPAK33Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7M42-60EX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 20A LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2582 Stücke: Lieferzeit 10-14 Tag (e) |
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74AUP1G386GS,132 | Nexperia USA Inc. |
Description: IC XOR 1-CIR 3-IN 6-XSONPackaging: Bulk Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 3 Supplier Device Package: 6-XSON, SOT1202 (1x1) Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS4360PAS115 | Nexperia USA Inc. |
Description: NOW NEXPERIA PBSS4360PAS SMALL S |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PBSS4360PAS115 | Nexperia USA Inc. |
Description: NOW NEXPERIA PBSS4360PAS SMALL S |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CBTD16210DGG/S400, | Nexperia USA Inc. |
Description: IC BUS SWITCH 20BIT 48TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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74HC3GU04DP,125 | Nexperia USA Inc. |
Description: IC INVERTER 3CH 3-INP 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 3 Supplier Device Package: 8-TSSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 5ns @ 6V, 50pF Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 20 µA |
auf Bestellung 159 Stücke: Lieferzeit 10-14 Tag (e) |
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LSF0102GXX | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 8-X2SONPackaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 8-X2SON (1.35x0.8) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 0 V ~ 5 V Voltage - VCCB: 0 V ~ 5 V Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NHDTA114YUF | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 80V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74AUP1Z125GW,125 | Nexperia USA Inc. |
Description: IC INVERT/X-TAL DRVR 6-TSSOPPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: Inverter, X-Tal Driver Operating Temperature: -40°C ~ 125°C Supply Voltage: 0.8V ~ 3.6V Supplier Device Package: 6-TSSOP Part Status: Active |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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74AUP1Z125GW,125 | Nexperia USA Inc. |
Description: IC INVERT/X-TAL DRVR 6-TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: Inverter, X-Tal Driver Operating Temperature: -40°C ~ 125°C Supply Voltage: 0.8V ~ 3.6V Supplier Device Package: 6-TSSOP Part Status: Active |
auf Bestellung 44494 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS4032SN,115 | Nexperia USA Inc. |
Description: TRANS 2NPN DUAL 30V 5.7A 8-SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2.3W Current - Collector (Ic) (Max): 5.7A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V Frequency - Transition: 140MHz Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74AUP1T57GW,125 | Nexperia USA Inc. |
Description: IC XLTR VL UNIDIR 6-TSSOPFeatures: Configurable Gate Logic Functions Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Single-Ended Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Supplier Device Package: 6-TSSOP Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.8 V ~ 2.7 V Voltage - VCCB: 2.3 V ~ 3.6 V Number of Circuits: 1 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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74AUP1T57GW,125 | Nexperia USA Inc. |
Description: IC XLTR VL UNIDIR 6-TSSOPFeatures: Configurable Gate Logic Functions Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Single-Ended Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Supplier Device Package: 6-TSSOP Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.8 V ~ 2.7 V Voltage - VCCB: 2.3 V ~ 3.6 V Number of Circuits: 1 |
auf Bestellung 8933 Stücke: Lieferzeit 10-14 Tag (e) |
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74HCT9046APW118 | Nexperia USA Inc. |
Description: IC PHASE LOCK LOOP 16TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 19MHz Type: Phase Lock Loop (PLL) Input: Clock Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Ratio - Input:Output: 2:2 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes Divider/Multiplier: No/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 32160 Stücke: Lieferzeit 10-14 Tag (e) |
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NHDTC123JUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NHDTC123JUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NHDTC123JUX | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 885 Stücke: Lieferzeit 10-14 Tag (e) |
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NHDTC123JTR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NHDTC123JTR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 20840 Stücke: Lieferzeit 10-14 Tag (e) |
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PMZB350UPE,315 | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1A DFN1006B-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Power Dissipation (Max): 360mW (Ta), 3.125W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1006B-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V |
auf Bestellung 20021 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y6R5-40HX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 70A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2360 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6Y61-60PX | Nexperia USA Inc. |
Description: MOSFET P-CH 60V 25A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BUK6Y61-60PX | Nexperia USA Inc. |
Description: MOSFET P-CH 60V 25A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 1125 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6Y19-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 45A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 6054 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6Y10-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 80A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6Y10-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 80A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 8170 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6Y14-40PX | Nexperia USA Inc. |
Description: MOSFET P-CH 40V 64A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6Y14-40PX | Nexperia USA Inc. |
Description: MOSFET P-CH 40V 64A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 4809 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R2-40YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.05V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R2-40YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.05V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R9-40YSDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 200A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PSMN1R9-40YSDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 200A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V |
auf Bestellung 898 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R7-40YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 200A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 2.05V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7966 pF @ 20 V |
auf Bestellung 8240 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMNR70-30YLHX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 300A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PSMNR70-30YLHX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 300A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V Power Dissipation (Max): 268W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 2mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BUK7Y7R0-40HX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 68A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R5-40YSDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 240A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R5-40YSDX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 240A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V |
auf Bestellung 3572 Stücke: Lieferzeit 10-14 Tag (e) |
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BZV85-C75,133 | Nexperia USA Inc. |
Description: DIODE ZENER 75V 1.3W DO41Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 225 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 53 V |
auf Bestellung 60937 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC4053DB118 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74HC4053DB - SINGLEPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX79-C7V5,143 | Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 400MW ALF2Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: ALF2 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX79-C7V5,133 | Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 400MW ALF2Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: ALF2 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V |
auf Bestellung 9800 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX79-C7V5,143 | Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 400MW ALF2Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: ALF2 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V |
auf Bestellung 850 Stücke: Lieferzeit 10-14 Tag (e) |
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PESD2USB3UX-TR | Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: HDMI, USB Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: TO-236AB Unidirectional Channels: 2 Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PESD2USB3UX-TR | Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Applications: HDMI, USB Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: TO-236AB Unidirectional Channels: 2 Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 3848 Stücke: Lieferzeit 10-14 Tag (e) |
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PUMD3/ZL,165 | Nexperia USA Inc. |
Description: PUMD3 - NPN/PNP RESISTOR-EQUIPPEPackaging: Bulk Part Status: Active |
auf Bestellung 260000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PUMD3115 | Nexperia USA Inc. |
Description: NOW NEXPERIA PUMD3 - SMALL SIGNAPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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74HC154PW | Nexperia USA Inc. |
Description: NOW NEXPERIA 74HC154PW - DECODERPackaging: Bulk Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 4:16 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 24-TSSOP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| HEF4541BT518 | Nexperia USA Inc. |
Description: NOW NEXPERIA HEF4541BT - PROGRAMPackaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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HEF4543BT652 | Nexperia USA Inc. |
Description: NOW NEXPERIA HEF4543BT - SEVEN SPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 4:7 Type: Decoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Independent Circuits: 1 Current - Output High, Low: 3mA, 3mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SO |
auf Bestellung 2290 Stücke: Lieferzeit 10-14 Tag (e) |
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HEF4518BT652 | Nexperia USA Inc. |
Description: NOW NEXPERIA HEF4518BT - DECADEPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BC806-16HR | Nexperia USA Inc. |
Description: TRANS PNP 80V 0.5A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 300 mW Qualification: AEC-Q101 |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XS3A1T3157GSH | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 1 900MOHM 6XSONPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 900mOhm -3db Bandwidth: 40MHz Supplier Device Package: 6-XSON, SOT1202 (1x1) Voltage - Supply, Single (V+): 1.4V ~ 4.3V Charge Injection: 15pC Crosstalk: -90dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 40ns, 20ns Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 10nA Part Status: Active Number of Circuits: 1 |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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XS3A1T3157GSH | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 1 900MOHM 6XSONPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 900mOhm -3db Bandwidth: 40MHz Supplier Device Package: 6-XSON, SOT1202 (1x1) Voltage - Supply, Single (V+): 1.4V ~ 4.3V Charge Injection: 15pC Crosstalk: -90dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 40ns, 20ns Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 10nA Part Status: Active Number of Circuits: 1 |
auf Bestellung 47852 Stücke: Lieferzeit 10-14 Tag (e) |
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| 74AHC1G14GV |
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Hersteller: Nexperia USA Inc.
Description: INVERTER, AHC/VHC/H/U/V SERIES,
Description: INVERTER, AHC/VHC/H/U/V SERIES,
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LV132PW,118 |
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Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 3.9V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 3.9V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 12236 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 64+ | 0.33 EUR |
| 73+ | 0.29 EUR |
| 100+ | 0.25 EUR |
| 250+ | 0.23 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.2 EUR |
| 74LV393D |
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Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74LV132D - NAND GAT
Packaging: Bulk
Part Status: Active
Description: NOW NEXPERIA 74LV132D - NAND GAT
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52-C33,115 |
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Hersteller: Nexperia USA Inc.
Description: ZENER DIODE, 33V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Description: ZENER DIODE, 33V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7M42-60EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.49 EUR |
| BUK7M42-60EX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2582 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.84 EUR |
| 19+ | 1.14 EUR |
| 50+ | 0.84 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 74AUP1G386GS,132 |
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Hersteller: Nexperia USA Inc.
Description: IC XOR 1-CIR 3-IN 6-XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC XOR 1-CIR 3-IN 6-XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 436+ | 1.37 EUR |
| PBSS4360PAS115 |
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Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PBSS4360PAS SMALL S
Description: NOW NEXPERIA PBSS4360PAS SMALL S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PBSS4360PAS115 |
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Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PBSS4360PAS SMALL S
Description: NOW NEXPERIA PBSS4360PAS SMALL S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CBTD16210DGG/S400, |
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Hersteller: Nexperia USA Inc.
Description: IC BUS SWITCH 20BIT 48TSSOP
Description: IC BUS SWITCH 20BIT 48TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HC3GU04DP,125 |
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Hersteller: Nexperia USA Inc.
Description: IC INVERTER 3CH 3-INP 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 5ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 20 µA
Description: IC INVERTER 3CH 3-INP 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 5ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 20 µA
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.3 EUR |
| 19+ | 1.12 EUR |
| 25+ | 1.05 EUR |
| 100+ | 0.83 EUR |
| LSF0102GXX |
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Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 8-X2SON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-X2SON (1.35x0.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-X2SON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-X2SON (1.35x0.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NHDTA114YUF |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP1Z125GW,125 |
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Hersteller: Nexperia USA Inc.
Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.45 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.43 EUR |
| 21000+ | 0.42 EUR |
| 74AUP1Z125GW,125 |
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Hersteller: Nexperia USA Inc.
Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 44494 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 30+ | 0.71 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.56 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.48 EUR |
| PBSS4032SN,115 |
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Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN DUAL 30V 5.7A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 5.7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: TRANS 2NPN DUAL 30V 5.7A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 5.7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP1T57GW,125 |
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Hersteller: Nexperia USA Inc.
Description: IC XLTR VL UNIDIR 6-TSSOP
Features: Configurable Gate Logic Functions
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 6-TSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.8 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 1
Description: IC XLTR VL UNIDIR 6-TSSOP
Features: Configurable Gate Logic Functions
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 6-TSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.8 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 1
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.24 EUR |
| 74AUP1T57GW,125 |
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Hersteller: Nexperia USA Inc.
Description: IC XLTR VL UNIDIR 6-TSSOP
Features: Configurable Gate Logic Functions
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 6-TSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.8 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 1
Description: IC XLTR VL UNIDIR 6-TSSOP
Features: Configurable Gate Logic Functions
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 6-TSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.8 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 1
auf Bestellung 8933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 0.58 EUR |
| 52+ | 0.4 EUR |
| 59+ | 0.36 EUR |
| 100+ | 0.31 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.26 EUR |
| 74HCT9046APW118 |
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Hersteller: Nexperia USA Inc.
Description: IC PHASE LOCK LOOP 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 19MHz
Type: Phase Lock Loop (PLL)
Input: Clock
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 2:2
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC PHASE LOCK LOOP 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 19MHz
Type: Phase Lock Loop (PLL)
Input: Clock
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 2:2
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 32160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 234+ | 2.44 EUR |
| NHDTC123JUF |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NHDTC123JUF |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NHDTC123JUX |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 0.27 EUR |
| 112+ | 0.19 EUR |
| 167+ | 0.13 EUR |
| 500+ | 0.096 EUR |
| NHDTC123JTR |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.074 EUR |
| 6000+ | 0.065 EUR |
| 9000+ | 0.062 EUR |
| 15000+ | 0.057 EUR |
| NHDTC123JTR |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 20840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 94+ | 0.23 EUR |
| 151+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.089 EUR |
| PMZB350UPE,315 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Description: MOSFET P-CH 20V 1A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
auf Bestellung 20021 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 47+ | 0.45 EUR |
| 102+ | 0.2 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.15 EUR |
| 5000+ | 0.14 EUR |
| BUK9Y6R5-40HX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 70A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 70A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 18+ | 1.18 EUR |
| 25+ | 1.06 EUR |
| 100+ | 0.93 EUR |
| 250+ | 0.87 EUR |
| 500+ | 0.83 EUR |
| BUK6Y61-60PX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK6Y61-60PX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.03 EUR |
| 16+ | 1.36 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.88 EUR |
| BUK6Y19-30PX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 6054 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.78 EUR |
| 12+ | 1.75 EUR |
| 50+ | 1.31 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.9 EUR |
| BUK6Y10-30PX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 80A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 80A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.98 EUR |
| 3000+ | 0.89 EUR |
| 4500+ | 0.86 EUR |
| 7500+ | 0.82 EUR |
| BUK6Y10-30PX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 80A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 80A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 8170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.12 EUR |
| BUK6Y14-40PX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1 EUR |
| 4500+ | 0.89 EUR |
| BUK6Y14-40PX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4809 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 10+ | 2.18 EUR |
| 50+ | 1.63 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.15 EUR |
| PSMN3R2-40YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Description: MOSFET N-CH 40V 120A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.2 EUR |
| PSMN3R2-40YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Description: MOSFET N-CH 40V 120A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.75 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.48 EUR |
| PSMN1R9-40YSDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Description: MOSFET N-CH 40V 200A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PSMN1R9-40YSDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Description: MOSFET N-CH 40V 200A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.46 EUR |
| 10+ | 3.52 EUR |
| 50+ | 2.69 EUR |
| 100+ | 2.42 EUR |
| 500+ | 1.94 EUR |
| PSMN1R7-40YLDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7966 pF @ 20 V
Description: MOSFET N-CH 40V 200A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7966 pF @ 20 V
auf Bestellung 8240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.55 EUR |
| 10+ | 3.58 EUR |
| 50+ | 2.74 EUR |
| 100+ | 2.46 EUR |
| 500+ | 1.87 EUR |
| PSMNR70-30YLHX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PSMNR70-30YLHX |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y7R0-40HX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 68A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 68A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.04 EUR |
| 3000+ | 0.95 EUR |
| PSMN1R5-40YSDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 240A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Description: MOSFET N-CH 40V 240A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.49 EUR |
| PSMN1R5-40YSDX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 240A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Description: MOSFET N-CH 40V 240A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
auf Bestellung 3572 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.58 EUR |
| 10+ | 2.94 EUR |
| 50+ | 2.24 EUR |
| 100+ | 2 EUR |
| 500+ | 1.61 EUR |
| BZV85-C75,133 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 75V 1.3W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 225 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 53 V
Description: DIODE ZENER 75V 1.3W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 225 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 53 V
auf Bestellung 60937 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2844+ | 0.2 EUR |
| 74HC4053DB118 |
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Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74HC4053DB - SINGLE
Packaging: Bulk
Part Status: Active
Description: NOW NEXPERIA 74HC4053DB - SINGLE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX79-C7V5,143 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 400MW ALF2
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Description: DIODE ZENER 7.5V 400MW ALF2
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX79-C7V5,133 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Description: DIODE ZENER 7.5V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
auf Bestellung 9800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.23 EUR |
| 141+ | 0.14 EUR |
| 230+ | 0.092 EUR |
| 500+ | 0.065 EUR |
| 1000+ | 0.057 EUR |
| 2000+ | 0.051 EUR |
| 5000+ | 0.043 EUR |
| BZX79-C7V5,143 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Description: DIODE ZENER 7.5V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 0.25 EUR |
| 132+ | 0.15 EUR |
| 216+ | 0.096 EUR |
| 500+ | 0.07 EUR |
| PESD2USB3UX-TR |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: HDMI, USB
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: TVS DIODE 3.3VWM TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: HDMI, USB
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PESD2USB3UX-TR |
![]() |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: HDMI, USB
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: TVS DIODE 3.3VWM TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: HDMI, USB
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3848 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.09 EUR |
| 32+ | 0.67 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| PUMD3/ZL,165 |
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Hersteller: Nexperia USA Inc.
Description: PUMD3 - NPN/PNP RESISTOR-EQUIPPE
Packaging: Bulk
Part Status: Active
Description: PUMD3 - NPN/PNP RESISTOR-EQUIPPE
Packaging: Bulk
Part Status: Active
auf Bestellung 260000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4537+ | 0.13 EUR |
| PUMD3115 |
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Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PUMD3 - SMALL SIGNA
Packaging: Bulk
Part Status: Active
Description: NOW NEXPERIA PUMD3 - SMALL SIGNA
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HC154PW |
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Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74HC154PW - DECODER
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:16
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TSSOP
Part Status: Active
Description: NOW NEXPERIA 74HC154PW - DECODER
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:16
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HEF4541BT518 |
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Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA HEF4541BT - PROGRAM
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: NOW NEXPERIA HEF4541BT - PROGRAM
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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| HEF4543BT652 |
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Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA HEF4543BT - SEVEN S
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:7
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 3mA, 3mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Description: NOW NEXPERIA HEF4543BT - SEVEN S
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:7
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 3mA, 3mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
auf Bestellung 2290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1350+ | 0.42 EUR |
| HEF4518BT652 |
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Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA HEF4518BT - DECADE
Packaging: Bulk
Part Status: Active
Description: NOW NEXPERIA HEF4518BT - DECADE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC806-16HR |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 80V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 300 mW
Qualification: AEC-Q101
Description: TRANS PNP 80V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
| XS3A1T3157GSH |
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Hersteller: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.18 EUR |
| 25000+ | 0.17 EUR |
| XS3A1T3157GSH |
![]() |
Hersteller: Nexperia USA Inc.
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 900MOHM 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 900mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Voltage - Supply, Single (V+): 1.4V ~ 4.3V
Charge Injection: 15pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 40ns, 20ns
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 47852 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 0.46 EUR |
| 68+ | 0.31 EUR |
| 76+ | 0.27 EUR |
| 100+ | 0.24 EUR |
| 250+ | 0.21 EUR |
| 500+ | 0.2 EUR |
| 2500+ | 0.19 EUR |























