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74HCT11PW-Q100J 74HCT11PW-Q100J Nexperia USA Inc. 74HC_HCT11_Q100.pdf Description: IC GATE AND 3CH 3-INP 14TSSOP
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 2 µA
Number of Circuits: 3
Part Status: Active
Qualification: AEC-Q100
Grade: Automotive
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Input Logic Level - Low: 0.8V
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74HCT11PW-Q100J 74HCT11PW-Q100J Nexperia USA Inc. 74HC_HCT11_Q100.pdf Description: IC GATE AND 3CH 3-INP 14TSSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 3
Part Status: Active
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Input Logic Level - Low: 0.8V
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74HCT11DB,112 74HCT11DB,112 Nexperia USA Inc. 74HC_HCT11.pdf Description: IC GATE AND 3CH 3-INP 14SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 3
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-SSOP
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Packaging: Tube
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74HCT11D,653 74HCT11D,653 Nexperia USA Inc. 74HC_HCT11.pdf Description: IC GATE AND 3CH 3-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74HCT11PW,118 74HCT11PW,118 Nexperia USA Inc. 74HC_HCT11.pdf Description: IC GATE AND 3CH 3-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74HCT11DB,112 74HCT11DB,112 Nexperia USA Inc. 74HC_HCT11.pdf Description: IC GATE AND 3CH 3-INP 14SSOP
Packaging: Tube
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74HCT109DB,112 74HCT109DB,112 Nexperia USA Inc. 74HC_HCT109.pdf Description: IC FF JK-TYPE 2-ELE 1-BIT
Packaging: Tube
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 55 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-SSOP
Max Propagation Delay @ V, Max CL: 35ns @ 4.5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 1
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74HCT10DB,112-NEX Nexperia USA Inc. Description: IC GATE NAND 3CH 3-INP 14SSOP
Packaging: Tube
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74HCT109D-Q100J 74HCT109D-Q100J Nexperia USA Inc. 74HC_HCT109_Q100.pdf Description: IC FF JK TYPE DOUBLE 1BIT 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 81 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-SO
Max Propagation Delay @ V, Max CL: 35ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Bits per Element: 1
Qualification: AEC-Q100
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74HCT10PW-Q100J 74HCT10PW-Q100J Nexperia USA Inc. 74HC_HCT10_Q100.pdf Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
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74HCT10PW-Q100J 74HCT10PW-Q100J Nexperia USA Inc. 74HC_HCT10_Q100.pdf Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
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PESD1NFC-L315 PESD1NFC-L315 Nexperia USA Inc. Description: TVS DIODE
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74HC4050PW Nexperia USA Inc. Description: IC BUFFER NON-INVERT 6V 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 16-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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74AHCT373D,112 74AHCT373D,112 Nexperia USA Inc. 74AHC373.pdf Description: IC D-TYPE TRANSP 8:8 20-SO
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4ns
Supplier Device Package: 20-SO
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74AHC1G14GV Nexperia USA Inc. PHGL-S-A0001393175-1.pdf?t.download=true&u=5oefqw Description: INVERTER, AHC/VHC/H/U/V SERIES,
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74LV132PW,118 74LV132PW,118 Nexperia USA Inc. 74LV132.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 3.9V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
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74LV393D Nexperia USA Inc. PHGL-S-A0001367341-1.pdf?t.download=true&u=5oefqw Description: NOW NEXPERIA 74LV132D - NAND GAT
Packaging: Bulk
Part Status: Active
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BZT52-C33,115 BZT52-C33,115 Nexperia USA Inc. BZT52_SER.pdf Description: ZENER DIODE, 33V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
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BZT52-C33,118 BZT52-C33,118 Nexperia USA Inc. BZT52_SER.pdf Description: ZENER DIODE
Packaging: Bulk
Part Status: Active
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BUK7M42-60EX BUK7M42-60EX Nexperia USA Inc. BUK7M42-60E.pdf Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK7M42-60EX BUK7M42-60EX Nexperia USA Inc. BUK7M42-60E.pdf Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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74AUP1G386GS,132 74AUP1G386GS,132 Nexperia USA Inc. PHGLS25188-1.pdf?t.download=true&u=5oefqw Description: IC GATE XOR 1CH 3-INP 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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PBSS4360PAS115 PBSS4360PAS115 Nexperia USA Inc. PBSS4360PAS.pdf Description: NOW NEXPERIA PBSS4360PAS SMALL S
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PBSS4360PAS115 PBSS4360PAS115 Nexperia USA Inc. PBSS4360PAS.pdf Description: NOW NEXPERIA PBSS4360PAS SMALL S
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CBTD16210DGG/S400, Nexperia USA Inc. CBTD16210.pdf Description: IC BUS SWITCH 20BIT 48TSSOP
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74HC3GU04DP,125 74HC3GU04DP,125 Nexperia USA Inc. 74HC3GU04.pdf Description: IC INVERTER 3CH 3-INP 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 5ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 20 µA
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LSF0102GXX LSF0102GXX Nexperia USA Inc. LSF0102.pdf Description: IC XLTR VL BIDIR 8-X2SON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-X2SON (1.35x0.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
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NHDTA114YUF NHDTA114YUF Nexperia USA Inc. NHDTA123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS PNP 80V SOT323
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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74AUP1Z125GW,125 74AUP1Z125GW,125 Nexperia USA Inc. 74AUP1Z125.pdf Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
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74AUP1Z125GW,125 74AUP1Z125GW,125 Nexperia USA Inc. 74AUP1Z125.pdf Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
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PBSS4032SN,115 PBSS4032SN,115 Nexperia USA Inc. PBSS4032SN.pdf Description: TRANS 2NPN DUAL 30V 5.7A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 5.7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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74AUP1T57GW,125 74AUP1T57GW,125 Nexperia USA Inc. 74AUP1T57.pdf Description: IC XLTR VL UNIDIR 6-TSSOP
Number of Circuits: 1
Voltage - VCCB: 2.3 V ~ 3.6 V
Voltage - VCCA: 1.8 V ~ 2.7 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 6-TSSOP
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Configurable Gate Logic Functions
Packaging: Tape & Reel (TR)
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74AUP1T57GW,125 74AUP1T57GW,125 Nexperia USA Inc. 74AUP1T57.pdf Description: IC XLTR VL UNIDIR 6-TSSOP
Features: Configurable Gate Logic Functions
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 6-TSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.8 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 1
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74HCT9046APW118 74HCT9046APW118 Nexperia USA Inc. 74HCT9046A.pdf Description: IC PHASE LOCK LOOP 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 19MHz
Type: Phase Lock Loop (PLL)
Input: Clock
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 2:2
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PMEG3005ELD,315 PMEG3005ELD,315 Nexperia USA Inc. PMEG3005ELD.pdf Description: DIODE SCHOTT 30V 500MA DFN1006D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
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NHDTC123JUF NHDTC123JUF Nexperia USA Inc. NHDTC123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NHDTC123JUF NHDTC123JUF Nexperia USA Inc. NHDTC123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NHDTC123JUX NHDTC123JUX Nexperia USA Inc. NHDTC123JU_143ZU_114YU_SER.pdf Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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NHDTC123JTR NHDTC123JTR Nexperia USA Inc. NHDTC123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NHDTC123JTR NHDTC123JTR Nexperia USA Inc. NHDTC123JT_143ZT_114YT_SER.pdf Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PMZB350UPE,315 PMZB350UPE,315 Nexperia USA Inc. PMZB350UPE.pdf Description: MOSFET P-CH 20V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 20021 Stücke:
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BUK9Y6R5-40HX BUK9Y6R5-40HX Nexperia USA Inc. BUK9Y6R5-40H.pdf Description: MOSFET N-CH 40V 70A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BUK6Y24-40PX BUK6Y24-40PX Nexperia USA Inc. BUK6Y24-40P.pdf Description: MOSFET P-CH 40V 39A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 20 V
Qualification: AEC-Q101
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BUK6Y61-60PX BUK6Y61-60PX Nexperia USA Inc. BUK6Y61-60P.pdf Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6Y61-60PX BUK6Y61-60PX Nexperia USA Inc. BUK6Y61-60P.pdf Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
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BUK6Y19-30PX BUK6Y19-30PX Nexperia USA Inc. BUK6Y19-30P.pdf Description: MOSFET P-CH 30V 45A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
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BUK6Y10-30PX BUK6Y10-30PX Nexperia USA Inc. BUK6Y10-30P.pdf Description: MOSFET P-CH 30V 80A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BUK6Y10-30PX BUK6Y10-30PX Nexperia USA Inc. BUK6Y10-30P.pdf Description: MOSFET P-CH 30V 80A LFPAK56
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Qualification: AEC-Q101
Grade: Automotive
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BUK6Y14-40PX BUK6Y14-40PX Nexperia USA Inc. BUK6Y14-40P.pdf Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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BUK6Y14-40PX BUK6Y14-40PX Nexperia USA Inc. BUK6Y14-40P.pdf Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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PSMN3R2-40YLDX PSMN3R2-40YLDX Nexperia USA Inc. PSMN3R2-40YLD.pdf Description: MOSFET N-CH 40V 120A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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1500+1.2 EUR
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PSMN3R2-40YLDX PSMN3R2-40YLDX Nexperia USA Inc. PSMN3R2-40YLD.pdf Description: MOSFET N-CH 40V 120A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 2970 Stücke:
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100+1.74 EUR
500+1.48 EUR
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PSMN1R9-40YSDX PSMN1R9-40YSDX Nexperia USA Inc. PSMN1R9-40YSD.pdf Description: MOSFET N-CH 40V 200A LFPAK56
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Produkt ist nicht verfügbar
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PSMN1R9-40YSDX PSMN1R9-40YSDX Nexperia USA Inc. PSMN1R9-40YSD.pdf Description: MOSFET N-CH 40V 200A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
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PSMN1R7-40YLDX PSMN1R7-40YLDX Nexperia USA Inc. PSMN1R7-40YLD.pdf Description: MOSFET N-CH 40V 200A LFPAK56
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7966 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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PSMNR70-30YLHX PSMNR70-30YLHX Nexperia USA Inc. PSMNR70-30YLH.pdf Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PSMNR70-30YLHX PSMNR70-30YLHX Nexperia USA Inc. PSMNR70-30YLH.pdf Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BUK7Y7R0-40HX BUK7Y7R0-40HX Nexperia USA Inc. BUK7Y7R0-40H.pdf Description: MOSFET N-CH 40V 68A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
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PSMN1R5-40YSDX PSMN1R5-40YSDX Nexperia USA Inc. PSMN1R5-40YSD.pdf Description: MOSFET N-CH 40V 240A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 238W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PSMN1R5-40YSDX PSMN1R5-40YSDX Nexperia USA Inc. PSMN1R5-40YSD.pdf Description: MOSFET N-CH 40V 240A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 238W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 2084 Stücke:
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74HCT11PW-Q100J 74HC_HCT11_Q100.pdf
74HCT11PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 3CH 3-INP 14TSSOP
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 2 µA
Number of Circuits: 3
Part Status: Active
Qualification: AEC-Q100
Grade: Automotive
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Input Logic Level - Low: 0.8V
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74HCT11PW-Q100J 74HC_HCT11_Q100.pdf
74HCT11PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 3CH 3-INP 14TSSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 3
Part Status: Active
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Input Logic Level - Low: 0.8V
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74HCT11DB,112 74HC_HCT11.pdf
74HCT11DB,112
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 3CH 3-INP 14SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 3
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-SSOP
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Packaging: Tube
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74HCT11D,653 74HC_HCT11.pdf
74HCT11D,653
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 3CH 3-INP 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-SO
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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56+0.38 EUR
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74HCT11PW,118 74HC_HCT11.pdf
74HCT11PW,118
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 3CH 3-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74HCT11DB,112 74HC_HCT11.pdf
74HCT11DB,112
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 3CH 3-INP 14SSOP
Packaging: Tube
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74HCT109DB,112 74HC_HCT109.pdf
74HCT109DB,112
Hersteller: Nexperia USA Inc.
Description: IC FF JK-TYPE 2-ELE 1-BIT
Packaging: Tube
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 4mA, 4mA
Trigger Type: Positive Edge
Clock Frequency: 55 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-SSOP
Max Propagation Delay @ V, Max CL: 35ns @ 4.5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 1
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74HCT10DB,112-NEX
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 3CH 3-INP 14SSOP
Packaging: Tube
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74HCT109D-Q100J 74HC_HCT109_Q100.pdf
74HCT109D-Q100J
Hersteller: Nexperia USA Inc.
Description: IC FF JK TYPE DOUBLE 1BIT 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 81 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-SO
Max Propagation Delay @ V, Max CL: 35ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Bits per Element: 1
Qualification: AEC-Q100
auf Bestellung 2436 Stücke:
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36+0.58 EUR
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74HCT10PW-Q100J 74HC_HCT10_Q100.pdf
74HCT10PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74HCT10PW-Q100J 74HC_HCT10_Q100.pdf
74HCT10PW-Q100J
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 24ns @ 4.5V, 50pF
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
auf Bestellung 6436 Stücke:
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PESD1NFC-L315
PESD1NFC-L315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE
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74HC4050PW
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 5.2mA, 5.2mA
Supplier Device Package: 16-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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74AHCT373D,112 74AHC373.pdf
74AHCT373D,112
Hersteller: Nexperia USA Inc.
Description: IC D-TYPE TRANSP 8:8 20-SO
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4ns
Supplier Device Package: 20-SO
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74AHC1G14GV PHGL-S-A0001393175-1.pdf?t.download=true&u=5oefqw
Hersteller: Nexperia USA Inc.
Description: INVERTER, AHC/VHC/H/U/V SERIES,
Produkt ist nicht verfügbar
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74LV132PW,118 74LV132.pdf
74LV132PW,118
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 3.9V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
auf Bestellung 12236 Stücke:
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44+0.48 EUR
64+0.33 EUR
73+0.29 EUR
100+0.25 EUR
250+0.23 EUR
500+0.21 EUR
1000+0.2 EUR
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74LV393D PHGL-S-A0001367341-1.pdf?t.download=true&u=5oefqw
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74LV132D - NAND GAT
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BZT52-C33,115 BZT52_SER.pdf
BZT52-C33,115
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE, 33V, 5%, 0.41W, SIL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BZT52-C33,118 BZT52_SER.pdf
BZT52-C33,118
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BUK7M42-60EX BUK7M42-60E.pdf
BUK7M42-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.45 EUR
3000+0.42 EUR
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BUK7M42-60EX BUK7M42-60E.pdf
BUK7M42-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 20A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4319 Stücke:
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13+1.71 EUR
20+1.08 EUR
100+0.7 EUR
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74AUP1G386GS,132 PHGLS25188-1.pdf?t.download=true&u=5oefqw
74AUP1G386GS,132
Hersteller: Nexperia USA Inc.
Description: IC GATE XOR 1CH 3-INP 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 5000 Stücke:
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1138+0.5 EUR
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PBSS4360PAS115 PBSS4360PAS.pdf
PBSS4360PAS115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PBSS4360PAS SMALL S
Produkt ist nicht verfügbar
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PBSS4360PAS115 PBSS4360PAS.pdf
PBSS4360PAS115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PBSS4360PAS SMALL S
Produkt ist nicht verfügbar
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CBTD16210DGG/S400, CBTD16210.pdf
Hersteller: Nexperia USA Inc.
Description: IC BUS SWITCH 20BIT 48TSSOP
Produkt ist nicht verfügbar
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74HC3GU04DP,125 74HC3GU04.pdf
74HC3GU04DP,125
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 3CH 3-INP 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 5ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 20 µA
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17+1.3 EUR
19+1.12 EUR
25+1.05 EUR
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LSF0102GXX LSF0102.pdf
LSF0102GXX
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 8-X2SON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-X2SON (1.35x0.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0 V ~ 5 V
Voltage - VCCB: 0 V ~ 5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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NHDTA114YUF NHDTA123JU_143ZU_114YU_SER.pdf
NHDTA114YUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 80V SOT323
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 235 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74AUP1Z125GW,125 74AUP1Z125.pdf
74AUP1Z125GW,125
Hersteller: Nexperia USA Inc.
Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.39 EUR
9000+0.38 EUR
21000+0.37 EUR
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74AUP1Z125GW,125 74AUP1Z125.pdf
74AUP1Z125GW,125
Hersteller: Nexperia USA Inc.
Description: IC INVERT/X-TAL DRVR 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter, X-Tal Driver
Operating Temperature: -40°C ~ 125°C
Supply Voltage: 0.8V ~ 3.6V
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 44494 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
33+0.64 EUR
37+0.57 EUR
100+0.5 EUR
250+0.46 EUR
500+0.44 EUR
1000+0.43 EUR
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PBSS4032SN,115 PBSS4032SN.pdf
PBSS4032SN,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN DUAL 30V 5.7A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 5.7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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74AUP1T57GW,125 74AUP1T57.pdf
74AUP1T57GW,125
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL UNIDIR 6-TSSOP
Number of Circuits: 1
Voltage - VCCB: 2.3 V ~ 3.6 V
Voltage - VCCA: 1.8 V ~ 2.7 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 6-TSSOP
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Configurable Gate Logic Functions
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.25 EUR
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74AUP1T57GW,125 74AUP1T57.pdf
74AUP1T57GW,125
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL UNIDIR 6-TSSOP
Features: Configurable Gate Logic Functions
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Single-Ended
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 6-TSSOP
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.8 V ~ 2.7 V
Voltage - VCCB: 2.3 V ~ 3.6 V
Number of Circuits: 1
auf Bestellung 8933 Stücke:
Lieferzeit 10-14 Tag (e)
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36+0.58 EUR
52+0.4 EUR
59+0.36 EUR
100+0.31 EUR
250+0.29 EUR
500+0.27 EUR
1000+0.26 EUR
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74HCT9046APW118 74HCT9046A.pdf
74HCT9046APW118
Hersteller: Nexperia USA Inc.
Description: IC PHASE LOCK LOOP 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 19MHz
Type: Phase Lock Loop (PLL)
Input: Clock
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Ratio - Input:Output: 2:2
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: No/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 32160 Stücke:
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234+2.44 EUR
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PMEG3005ELD,315 PMEG3005ELD.pdf
PMEG3005ELD,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTT 30V 500MA DFN1006D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 89043 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
62+0.35 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.15 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 39 Stücke
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NHDTC123JUF NHDTC123JU_143ZU_114YU_SER.pdf
NHDTC123JUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NHDTC123JUF NHDTC123JU_143ZU_114YU_SER.pdf
NHDTC123JUF
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NHDTC123JUX NHDTC123JU_143ZU_114YU_SER.pdf
NHDTC123JUX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
112+0.19 EUR
167+0.13 EUR
500+0.096 EUR
Mindestbestellmenge: 77 Stücke
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NHDTC123JTR NHDTC123JT_143ZT_114YT_SER.pdf
NHDTC123JTR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.074 EUR
6000+0.065 EUR
9000+0.062 EUR
15000+0.057 EUR
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NHDTC123JTR NHDTC123JT_143ZT_114YT_SER.pdf
NHDTC123JTR
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 20840 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
94+0.23 EUR
151+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
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PMZB350UPE,315 PMZB350UPE.pdf
PMZB350UPE,315
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1A DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 20021 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
47+0.45 EUR
102+0.2 EUR
500+0.19 EUR
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5000+0.14 EUR
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BUK9Y6R5-40HX BUK9Y6R5-40H.pdf
BUK9Y6R5-40HX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 70A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2036 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.63 EUR
18+1.18 EUR
25+1.06 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
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BUK6Y24-40PX BUK6Y24-40P.pdf
BUK6Y24-40PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 40V 39A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.2A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9012 Stücke:
Lieferzeit 10-14 Tag (e)
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13+1.69 EUR
100+1.12 EUR
500+0.88 EUR
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BUK6Y61-60PX BUK6Y61-60P.pdf
BUK6Y61-60PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6Y61-60PX BUK6Y61-60P.pdf
BUK6Y61-60PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 60V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 4.7A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1125 Stücke:
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16+1.36 EUR
100+1.04 EUR
500+0.88 EUR
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BUK6Y19-30PX BUK6Y19-30P.pdf
BUK6Y19-30PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 9063 Stücke:
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8+2.92 EUR
12+1.83 EUR
100+1.21 EUR
500+0.95 EUR
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BUK6Y10-30PX BUK6Y10-30P.pdf
BUK6Y10-30PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 80A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.98 EUR
3000+0.89 EUR
4500+0.86 EUR
7500+0.82 EUR
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BUK6Y10-30PX BUK6Y10-30P.pdf
BUK6Y10-30PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 80A LFPAK56
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 8170 Stücke:
Lieferzeit 10-14 Tag (e)
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7+3.36 EUR
10+2.12 EUR
100+1.42 EUR
500+1.12 EUR
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BUK6Y14-40PX BUK6Y14-40P.pdf
BUK6Y14-40PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.99 EUR
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BUK6Y14-40PX BUK6Y14-40P.pdf
BUK6Y14-40PX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2912 Stücke:
Lieferzeit 10-14 Tag (e)
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7+3.37 EUR
10+2.15 EUR
100+1.44 EUR
500+1.13 EUR
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PSMN3R2-40YLDX PSMN3R2-40YLD.pdf
PSMN3R2-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.2 EUR
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PSMN3R2-40YLDX PSMN3R2-40YLD.pdf
PSMN3R2-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.75 EUR
10+2.23 EUR
100+1.74 EUR
500+1.48 EUR
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PSMN1R9-40YSDX PSMN1R9-40YSD.pdf
PSMN1R9-40YSDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Produkt ist nicht verfügbar
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PSMN1R9-40YSDX PSMN1R9-40YSD.pdf
PSMN1R9-40YSDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.45 EUR
10+3.51 EUR
50+2.68 EUR
100+2.4 EUR
500+1.82 EUR
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PSMN1R7-40YLDX PSMN1R7-40YLD.pdf
PSMN1R7-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 200A LFPAK56
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7966 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.05V @ 1mA
Power Dissipation (Max): 194W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 8240 Stücke:
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AnzahlPrivatkunde
4+5.55 EUR
10+3.58 EUR
50+2.74 EUR
100+2.46 EUR
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PSMNR70-30YLHX PSMNR70-30YLH.pdf
PSMNR70-30YLHX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PSMNR70-30YLHX PSMNR70-30YLH.pdf
PSMNR70-30YLHX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 4852 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BUK7Y7R0-40HX BUK7Y7R0-40H.pdf
BUK7Y7R0-40HX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 68A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.04 EUR
3000+0.95 EUR
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PSMN1R5-40YSDX PSMN1R5-40YSD.pdf
PSMN1R5-40YSDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 240A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 238W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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PSMN1R5-40YSDX PSMN1R5-40YSD.pdf
PSMN1R5-40YSDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 240A LFPAK56
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 238W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 2084 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.18 EUR
10+3.32 EUR
50+2.52 EUR
100+2.27 EUR
500+1.71 EUR
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