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BUK7Y15-100EX BUK7Y15-100EX Nexperia USA Inc. BUK7Y15-100E.pdf Description: MOSFET N-CH 100V 68A LFPAK56
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BUK7Y15-100EX BUK7Y15-100EX Nexperia USA Inc. BUK7Y15-100E.pdf Description: MOSFET N-CH 100V 68A LFPAK56
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BUK7Y22-100EX BUK7Y22-100EX Nexperia USA Inc. BUK7Y22-100E.pdf Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
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BUK7Y41-80EX BUK7Y41-80EX Nexperia USA Inc. BUK7Y41-80E.pdf Description: MOSFET N-CH 80V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1119 pF @ 25 V
Qualification: AEC-Q101
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BUK7K8R7-40EX BUK7K8R7-40EX Nexperia USA Inc. BUK7K8R7-40E.pdf Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1439pF @ 25V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BUK7K8R7-40EX BUK7K8R7-40EX Nexperia USA Inc. BUK7K8R7-40E.pdf Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1439pF @ 25V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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BUK7Y25-60EX BUK7Y25-60EX Nexperia USA Inc. BUK7Y25-60E.pdf Description: MOSFET N-CH 60V 34A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK7Y7R2-60EX BUK7Y7R2-60EX Nexperia USA Inc. BUK7Y7R2-60E.pdf Description: MOSFET N-CH 60V LFPAK56 PWR-SO8
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 167W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Qualification: AEC-Q101
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BUK7Y7R2-60EX BUK7Y7R2-60EX Nexperia USA Inc. BUK7Y7R2-60E.pdf Description: MOSFET N-CH 60V LFPAK56 PWR-SO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 167W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Qualification: AEC-Q101
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BAV70S-QF BAV70S-QF Nexperia USA Inc. BAV70S-Q.pdf Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
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BAV70S-QX BAV70S-QX Nexperia USA Inc. BAV70S-Q.pdf Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
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BAV70M315 BAV70M315 Nexperia USA Inc. BAV70_SER.pdf Description: NOW NEXPERIA BAV70M - RECTIFIER
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BZX884-C8V2,315 BZX884-C8V2,315 Nexperia USA Inc. BZX884_BC_SER.pdf Description: DIODE ZENER 8.2V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q100
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PDZ8.2B-QX PDZ8.2B-QX Nexperia USA Inc. PDZ-B-Q_SER.pdf Description: DIODE ZENER 8.2V 400MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
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PDZ6.2B-QX PDZ6.2B-QX Nexperia USA Inc. PDZ-B-Q_SER.pdf Description: DIODE ZENER 6.2V 400MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3 V
Qualification: AEC-Q101
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PDZ6.2BGW,115 PDZ6.2BGW,115 Nexperia USA Inc. PDZ-GW_SER.pdf Description: ZENER DIODE
Packaging: Bulk
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PDZ6.2BGW115 PDZ6.2BGW115 Nexperia USA Inc. PDZ-GW_SER.pdf Description: NOW NEXPERIA PDZ6.2BGW - ZENER D
Packaging: Bulk
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BZX84-C12/DG/B3,21 BZX84-C12/DG/B3,21 Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12.05V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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BZX84-C12/DG/B3,23 BZX84-C12/DG/B3,23 Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12.05V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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BZX84-C12/DG/B4R BZX84-C12/DG/B4R Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12.05V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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BZX84-C12/DG/B4VL Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12.05V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BUK7E04-40A,127 BUK7E04-40A,127 Nexperia USA Inc. BUK7E04-40A.pdf Description: MOSFET N-CH 40V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V
Qualification: AEC-Q101
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74AUP1G04GW-Q100H 74AUP1G04GW-Q100H Nexperia USA Inc. 74AUP1G04_Q100.pdf Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Grade: Automotive
Qualification: AEC-Q100
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BUK751R8-40E,127 BUK751R8-40E,127 Nexperia USA Inc. BUK751R8-40E.pdf Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
Qualification: AEC-Q101
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BUK755R4-100E,127 BUK755R4-100E,127 Nexperia USA Inc. BUK755R4-100E.pdf Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V
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BUK758R3-40E,127 BUK758R3-40E,127 Nexperia USA Inc. BUK758R3-40E.pdf Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BC817-25/SNR BC817-25/SNR Nexperia USA Inc. BC817_SER.pdf Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BC817-25/SNVL BC817-25/SNVL Nexperia USA Inc. BC817_SER.pdf Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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PESD5V0U1UL,315 PESD5V0U1UL,315 Nexperia USA Inc. PESD5V0U1UA_UB_UL.pdf Description: TVS DIODE 5VWM DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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BZX58550-C11X BZX58550-C11X Nexperia USA Inc. BZX58550_SER.pdf Description: BZX58550-C11/SOD523/SC-79
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BZX58550-C11X BZX58550-C11X Nexperia USA Inc. BZX58550_SER.pdf Description: BZX58550-C11/SOD523/SC-79
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74AHCT573PW,118 74AHCT573PW,118 Nexperia USA Inc. 74AHC_AHCT573.pdf Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 3.5ns
Supplier Device Package: 20-TSSOP
Part Status: Active
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74AHCT573PW,118 74AHCT573PW,118 Nexperia USA Inc. 74AHC_AHCT573.pdf Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 3.5ns
Supplier Device Package: 20-TSSOP
Part Status: Active
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BC856-QR BC856-QR Nexperia USA Inc. BC856-Q_BC857-Q_BC858-Q.pdf Description: TRANS PNP 65V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Qualification: AEC-Q101
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PBSS4021PX,115 PBSS4021PX,115 Nexperia USA Inc. PBSS4021PX.pdf Description: TRANS PNP 20V 6.2A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 265mV @ 345mA, 6.9A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
Frequency - Transition: 105MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 6.2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2.5 W
Grade: Automotive
Qualification: AEC-Q100
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PBSS4021PX,115 PBSS4021PX,115 Nexperia USA Inc. PBSS4021PX.pdf Description: TRANS PNP 20V 6.2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 265mV @ 345mA, 6.9A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
Frequency - Transition: 105MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 6.2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2.5 W
Grade: Automotive
Qualification: AEC-Q100
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PBSS4021SN,115 PBSS4021SN,115 Nexperia USA Inc. PBSS4021SN.pdf Description: TRANS 2NPN DUAL 20V 7.5A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 7.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 275mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 4A, 2V
Frequency - Transition: 115MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
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PBSS4021SN,115 PBSS4021SN,115 Nexperia USA Inc. PBSS4021SN.pdf Description: TRANS 2NPN DUAL 20V 7.5A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 7.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 275mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 4A, 2V
Frequency - Transition: 115MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
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PDTA124EQBZ PDTA124EQBZ Nexperia USA Inc. PDTA143_114_124_144EQB_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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PDTA124EQBZ PDTA124EQBZ Nexperia USA Inc. PDTA143_114_124_144EQB_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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Lieferzeit 10-14 Tag (e)
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BZX79-C39,113 BZX79-C39,113 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 39V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
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BZX58550-C2V2X BZX58550-C2V2X Nexperia USA Inc. BZX58550_SER.pdf Description: DIODE ZENER 2.2V 300MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Produkt ist nicht verfügbar
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BZX58550-C2V2X BZX58550-C2V2X Nexperia USA Inc. BZX58550_SER.pdf Description: DIODE ZENER 2.2V 300MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
auf Bestellung 2624 Stücke:
Lieferzeit 10-14 Tag (e)
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74LVC1G3157GS 74LVC1G3157GS Nexperia USA Inc. NEXP-S-A0002884645-1.pdf?t.download=true&u=5oefqw Description: NOW NEXPERIA 74LVC1G3157GS - SIN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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74AUP1T00GX125 Nexperia USA Inc. 74AUP1T00.pdf Description: IC GATE NAND 1CH 2-INP 5X2SON
Packaging: Bulk
Features: Schmitt Trigger
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 5-X2SON (0.80x0.80)
Input Logic Level - High: 1.9V ~ 2.6V
Input Logic Level - Low: 0.1V ~ 0.44V
Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1.2 µA
Produkt ist nicht verfügbar
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BZX38450-C5V1F BZX38450-C5V1F Nexperia USA Inc. BZX38450_SER.pdf Description: DIODE ZENER 5.1V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Produkt ist nicht verfügbar
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BUK762R7-30B,118 BUK762R7-30B,118 Nexperia USA Inc. BUK762R7-30B.pdf Description: MOSFET N-CH 30V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6212 pF @ 25 V
Qualification: AEC-Q101
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BAT54A-QVL BAT54A-QVL Nexperia USA Inc. Description: TRANS PREBIAS NPN/PNP
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PSMN3R2-30YLC,115 PSMN3R2-30YLC,115 Nexperia USA Inc. PSMN3R2-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2081 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN3R2-30YLC,115 PSMN3R2-30YLC,115 Nexperia USA Inc. PSMN3R2-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2081 pF @ 15 V
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PZU7.5B3,115 PZU7.5B3,115 Nexperia USA Inc. PZUXB_SER.pdf Description: DIODE ZENER 7.5V 310MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MM3Z33VT1GX MM3Z33VT1GX Nexperia USA Inc. MM3Z_SER.pdf Description: VOLTAGE REGULATOR DIODES
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
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74VHCT126BQ,115 74VHCT126BQ,115 Nexperia USA Inc. 74VHC_VHCT126.pdf Description: IC BUFF NON-INVERT 5.5V 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.37 EUR
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74VHCT126BQ,115 74VHCT126BQ,115 Nexperia USA Inc. 74VHC_VHCT126.pdf Description: IC BUFF NON-INVERT 5.5V 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Part Status: Active
auf Bestellung 8000 Stücke:
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BZX84-C7V5/DG/B3,2 BZX84-C7V5/DG/B3,2 Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 7.45V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.45 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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BZX84-C7V5/DG/B4R BZX84-C7V5/DG/B4R Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 7.45V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.45 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PDZ12B-QX PDZ12B-QX Nexperia USA Inc. Description: TRANS PREBIAS NPN/PNP
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PDZ12BGW,115 PDZ12BGW,115 Nexperia USA Inc. PDZ-GW_SER.pdf Description: ZENER DIODE
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Lieferzeit 10-14 Tag (e)
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PDZ12BGW,118 PDZ12BGW,118 Nexperia USA Inc. PDZ-GW_SER.pdf Description: SINGLE ZENER DIODE IN A SOD123 P
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PDZ12BGW115 PDZ12BGW115 Nexperia USA Inc. PDZ-GW_SER.pdf Description: NEXPERIA PDZ12BGW - SINGLE ZENER
auf Bestellung 114000 Stücke:
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BUK7Y15-100EX BUK7Y15-100E.pdf
BUK7Y15-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 68A LFPAK56
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BUK7Y15-100EX BUK7Y15-100E.pdf
BUK7Y15-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 68A LFPAK56
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BUK7Y22-100EX BUK7Y22-100E.pdf
BUK7Y22-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK7Y41-80EX BUK7Y41-80E.pdf
BUK7Y41-80EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 25A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1119 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
14+1.3 EUR
100+0.85 EUR
500+0.66 EUR
Mindestbestellmenge: 9
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BUK7K8R7-40EX BUK7K8R7-40E.pdf
BUK7K8R7-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1439pF @ 25V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BUK7K8R7-40EX BUK7K8R7-40E.pdf
BUK7K8R7-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 30A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1439pF @ 25V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1428 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.81 EUR
100+1.22 EUR
500+0.96 EUR
Mindestbestellmenge: 7
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BUK7Y25-60EX BUK7Y25-60E.pdf
BUK7Y25-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 34A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
22+0.81 EUR
100+0.6 EUR
500+0.53 EUR
Mindestbestellmenge: 17
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BUK7Y7R2-60EX BUK7Y7R2-60E.pdf
BUK7Y7R2-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V LFPAK56 PWR-SO8
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 167W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK7Y7R2-60EX BUK7Y7R2-60E.pdf
BUK7Y7R2-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V LFPAK56 PWR-SO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 167W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV70S-QF BAV70S-Q.pdf
BAV70S-QF
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV70S-QX BAV70S-Q.pdf
BAV70S-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV70M315 BAV70_SER.pdf
BAV70M315
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA BAV70M - RECTIFIER
Produkt ist nicht verfügbar
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BZX884-C8V2,315 BZX884_BC_SER.pdf
BZX884-C8V2,315
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 8.2V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
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PDZ8.2B-QX PDZ-B-Q_SER.pdf
PDZ8.2B-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 8.2V 400MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PDZ6.2B-QX PDZ-B-Q_SER.pdf
PDZ6.2B-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 400MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PDZ6.2BGW,115 PDZ-GW_SER.pdf
PDZ6.2BGW,115
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE
Packaging: Bulk
Produkt ist nicht verfügbar
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PDZ6.2BGW115 PDZ-GW_SER.pdf
PDZ6.2BGW115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PDZ6.2BGW - ZENER D
Packaging: Bulk
Produkt ist nicht verfügbar
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BZX84-C12/DG/B3,21 PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C12/DG/B3,21
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12.05V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84-C12/DG/B3,23 PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C12/DG/B3,23
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12.05V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84-C12/DG/B4R PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C12/DG/B4R
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12.05V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84-C12/DG/B4VL PHGLS29437-1.pdf?t.download=true&u=5oefqw
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12.05V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.05 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BUK7E04-40A,127 BUK7E04-40A.pdf
BUK7E04-40A,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5730 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74AUP1G04GW-Q100H 74AUP1G04_Q100.pdf
74AUP1G04GW-Q100H
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 1CH 1-INP 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
79+0.23 EUR
89+0.2 EUR
104+0.17 EUR
250+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 56
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BUK751R8-40E,127 BUK751R8-40E.pdf
BUK751R8-40E,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK755R4-100E,127 BUK755R4-100E.pdf
BUK755R4-100E,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V
Produkt ist nicht verfügbar
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BUK758R3-40E,127 BUK758R3-40E.pdf
BUK758R3-40E,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC817-25/SNR BC817_SER.pdf
BC817-25/SNR
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BC817-25/SNVL BC817_SER.pdf
BC817-25/SNVL
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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PESD5V0U1UL,315 PESD5V0U1UA_UB_UL.pdf
PESD5V0U1UL,315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13815 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
200+0.088 EUR
220+0.08 EUR
Mindestbestellmenge: 112
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BZX58550-C11X BZX58550_SER.pdf
BZX58550-C11X
Hersteller: Nexperia USA Inc.
Description: BZX58550-C11/SOD523/SC-79
Produkt ist nicht verfügbar
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BZX58550-C11X BZX58550_SER.pdf
BZX58550-C11X
Hersteller: Nexperia USA Inc.
Description: BZX58550-C11/SOD523/SC-79
auf Bestellung 2983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
35+0.51 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.12 EUR
Mindestbestellmenge: 28
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74AHCT573PW,118 74AHC_AHCT573.pdf
74AHCT573PW,118
Hersteller: Nexperia USA Inc.
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 3.5ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.22 EUR
Mindestbestellmenge: 2500
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74AHCT573PW,118 74AHC_AHCT573.pdf
74AHCT573PW,118
Hersteller: Nexperia USA Inc.
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 3.5ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
49+0.37 EUR
55+0.33 EUR
100+0.28 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 34
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BC856-QR BC856-Q_BC857-Q_BC858-Q.pdf
BC856-QR
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PBSS4021PX,115 PBSS4021PX.pdf
PBSS4021PX,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 20V 6.2A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 265mV @ 345mA, 6.9A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
Frequency - Transition: 105MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 6.2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2.5 W
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PBSS4021PX,115 PBSS4021PX.pdf
PBSS4021PX,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 20V 6.2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 265mV @ 345mA, 6.9A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
Frequency - Transition: 105MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 6.2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2.5 W
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
18+0.98 EUR
100+0.64 EUR
500+0.5 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
PBSS4021SN,115 PBSS4021SN.pdf
PBSS4021SN,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN DUAL 20V 7.5A 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 7.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 275mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 4A, 2V
Frequency - Transition: 115MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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PBSS4021SN,115 PBSS4021SN.pdf
PBSS4021SN,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN DUAL 20V 7.5A 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.3W
Current - Collector (Ic) (Max): 7.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 275mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 4A, 2V
Frequency - Transition: 115MHz
Supplier Device Package: 8-SO
Part Status: Obsolete
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
Mindestbestellmenge: 7
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PDTA124EQBZ PDTA143_114_124_144EQB_SER.pdf
PDTA124EQBZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.07 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
PDTA124EQBZ PDTA143_114_124_144EQB_SER.pdf
PDTA124EQBZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
58+0.31 EUR
118+0.15 EUR
500+0.13 EUR
1000+0.087 EUR
2000+0.075 EUR
Mindestbestellmenge: 39
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BZX79-C39,113 BZX79.pdf
BZX79-C39,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 39V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Produkt ist nicht verfügbar
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BZX58550-C2V2X BZX58550_SER.pdf
BZX58550-C2V2X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.2V 300MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Produkt ist nicht verfügbar
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BZX58550-C2V2X BZX58550_SER.pdf
BZX58550-C2V2X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.2V 300MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
auf Bestellung 2624 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
89+0.2 EUR
173+0.1 EUR
500+0.097 EUR
1000+0.091 EUR
Mindestbestellmenge: 59
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74LVC1G3157GS NEXP-S-A0002884645-1.pdf?t.download=true&u=5oefqw
74LVC1G3157GS
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74LVC1G3157GS - SIN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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74AUP1T00GX125 74AUP1T00.pdf
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 1CH 2-INP 5X2SON
Packaging: Bulk
Features: Schmitt Trigger
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 5-X2SON (0.80x0.80)
Input Logic Level - High: 1.9V ~ 2.6V
Input Logic Level - Low: 0.1V ~ 0.44V
Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1.2 µA
Produkt ist nicht verfügbar
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BZX38450-C5V1F BZX38450_SER.pdf
BZX38450-C5V1F
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK762R7-30B,118 BUK762R7-30B.pdf
BUK762R7-30B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6212 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT54A-QVL
BAT54A-QVL
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN/PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R2-30YLC,115 PSMN3R2-30YLC.pdf
PSMN3R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2081 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN3R2-30YLC,115 PSMN3R2-30YLC.pdf
PSMN3R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2081 pF @ 15 V
Produkt ist nicht verfügbar
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PZU7.5B3,115 PZUXB_SER.pdf
PZU7.5B3,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 310MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MM3Z33VT1GX MM3Z_SER.pdf
MM3Z33VT1GX
Hersteller: Nexperia USA Inc.
Description: VOLTAGE REGULATOR DIODES
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Produkt ist nicht verfügbar
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74VHCT126BQ,115 74VHC_VHCT126.pdf
74VHCT126BQ,115
Hersteller: Nexperia USA Inc.
Description: IC BUFF NON-INVERT 5.5V 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.37 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
74VHCT126BQ,115 74VHC_VHCT126.pdf
74VHCT126BQ,115
Hersteller: Nexperia USA Inc.
Description: IC BUFF NON-INVERT 5.5V 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
30+0.59 EUR
34+0.53 EUR
100+0.46 EUR
250+0.43 EUR
500+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 22
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BZX84-C7V5/DG/B3,2 PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C7V5/DG/B3,2
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.45V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.45 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84-C7V5/DG/B4R PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C7V5/DG/B4R
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.45V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.45 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PDZ12B-QX
PDZ12B-QX
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN/PNP
Produkt ist nicht verfügbar
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PDZ12BGW,115 PDZ-GW_SER.pdf
PDZ12BGW,115
Hersteller: Nexperia USA Inc.
Description: ZENER DIODE
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.033 EUR
Mindestbestellmenge: 15000
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PDZ12BGW,118 PDZ-GW_SER.pdf
PDZ12BGW,118
Hersteller: Nexperia USA Inc.
Description: SINGLE ZENER DIODE IN A SOD123 P
Produkt ist nicht verfügbar
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PDZ12BGW115 PDZ-GW_SER.pdf
PDZ12BGW115
Hersteller: Nexperia USA Inc.
Description: NEXPERIA PDZ12BGW - SINGLE ZENER
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.033 EUR
Mindestbestellmenge: 15000
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