Die Produkte nexperia usa inc.
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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PSMN1R5-50YLHX |
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Nexperia USA Inc. |
Description: PSMN1R5-50YLH/SOT1023/4 LEADS Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 333W (Ta) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
| PSMN1R2-55SLHAX |
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Nexperia USA Inc. |
Description: PSMN1R2-55SLH/SOT1235/LFPAK88 Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 375W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PSMN1R2-55SLH |
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Nexperia USA Inc. |
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 375W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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PSMN1R2-25YLD,115 | Nexperia USA Inc. |
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2 Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| PSMN1R7-25YLD115 |
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Nexperia USA Inc. |
Description: NOW NEXPERIA PSMN1R7-25YLD - POW Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
_SOT226%20Pkg.jpg "PSMN1R1-30EL,127") |
PSMN1R1-30EL,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A I2PAK Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V |
auf Bestellung 4999 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7581 Stücke - Preis und Lieferfrist anzeigen
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74AUP2G126DC,125 |
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Nexperia USA Inc. |
Description: IC BUF NON-INVERT 3.6V 8VSSOP Part Status: Active Supplier Device Package: 8-VSSOP Current - Output High, Low: 4mA, 4mA Number of Bits per Element: 1 Voltage - Supply: 0.8V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23326 Stücke - Preis und Lieferfrist anzeigen
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74HCT10DB,112 |
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Nexperia USA Inc. |
Description: NEXPERIA 74HCT10DB - NAND GATE, Part Status: Active Packaging: Bulk |
auf Bestellung 4056 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4492 Stücke - Preis und Lieferfrist anzeigen
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.jpg "BZX585-C51,115") |
BZX585-C51,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 51V 300MW SOD523 Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-523 Impedance (Max) (Zzt): 180 Ohms Voltage - Zener (Nom) (Vz): 51 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Tolerance: ±5% Packaging: Bulk |
auf Bestellung 66225 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 360 Stücke - Preis und Lieferfrist anzeigen
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BZV85-C56,133 |
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Nexperia USA Inc. |
Description: DIODE ZENER 56V 1.3W DO41 Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-41 Impedance (Max) (Zzt): 150 Ohms Voltage - Zener (Nom) (Vz): 56 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Bulk Current - Reverse Leakage @ Vr: 50 nA @ 39 V |
auf Bestellung 13376 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 52765 Stücke - Preis und Lieferfrist anzeigen
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74HCU04BQ,115 |
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Nexperia USA Inc. |
Description: IC INVERTER 6CH 6-INP 14DHVQFN Current - Quiescent (Max): 2 µA Number of Circuits: 6 Part Status: Active Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF Logic Level - Low: 0.3V ~ 1.2V Logic Level - High: 1.7V ~ 4.8V Supplier Device Package: 14-DHVQFN (2.5x3) Number of Inputs: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Packaging: Bulk Package / Case: 14-VFQFN Exposed Pad |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e) |
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74ALVC02BQ,115 |
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Nexperia USA Inc. |
Description: IC GATE NOR 4CH 2-INP 14DHVQFN Current - Quiescent (Max): 20 µA Number of Circuits: 4 Part Status: Active Max Propagation Delay @ V, Max CL: 2.2ns @ 3.3V, 50pF Logic Level - Low: 0.7V ~ 0.8V Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-DHVQFN (2.5x3) Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: NOR Gate Mounting Type: Surface Mount Package / Case: 14-VFQFN Exposed Pad Packaging: Bulk |
auf Bestellung 30000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12300 Stücke - Preis und Lieferfrist anzeigen
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| PXP6R1-30QLJ |
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Nexperia USA Inc. |
Description: PXP6R1-30QL/SOT8002/MLPAK33 Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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74ALVC00PW,118 |
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Nexperia USA Inc. |
Description: IC GATE NAND 4CH 2-INP 14TSSOP Operating Temperature: -40°C ~ 85°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Bulk Current - Quiescent (Max): 20 µA Number of Circuits: 4 Part Status: Active Max Propagation Delay @ V, Max CL: 2.1ns @ 3.3V, 50pF Logic Level - Low: 0.7V ~ 0.8V Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65V ~ 3.6V |
auf Bestellung 10000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 23654 Stücke - Preis und Lieferfrist anzeigen
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74ALVC00D,118 |
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Nexperia USA Inc. |
Description: IC GATE NAND 4CH 2-INP 14SO Current - Quiescent (Max): 20 µA Number of Circuits: 4 Part Status: Active Max Propagation Delay @ V, Max CL: 2.1ns @ 3.3V, 50pF Logic Level - Low: 0.7V ~ 0.8V Logic Level - High: 1.7V ~ 2V Supplier Device Package: 14-SO Number of Inputs: 2 Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 17500 Stücke Lieferzeit 21-28 Tag (e) |
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BUK9D23-40EX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 8A DFN2020MD-6 Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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BUK6D43-60EX |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 5A DFN2020MD-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Last Time Buy Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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74HC20PW118 | Nexperia USA Inc. |
Description: IC GATE NAND 2CH 4-INP 14TSSOP Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Current - Quiescent (Max): 2 µA Part Status: Active Number of Circuits: 2 Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Packaging: Bulk Logic Level - Low: 0.5V ~ 1.8V Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 14-TSSOP Number of Inputs: 4 Current - Output High, Low: 5.2mA, 5.2mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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74HC20D,653 |
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Nexperia USA Inc. |
Description: IC GATE NAND 2CH 4-INP 14SO Current - Quiescent (Max): 2 µA Number of Circuits: 2 Part Status: Active Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF Logic Level - Low: 0.5V ~ 1.8V Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 14-SO Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Bulk Number of Inputs: 4 Current - Output High, Low: 5.2mA, 5.2mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14401 Stücke - Preis und Lieferfrist anzeigen
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74LVC257ABQ,115 |
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Nexperia USA Inc. |
Description: IC MULTIPLEXER 4 X 2:1 16DHVQFN Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 1.2V ~ 3.6V Operating Temperature: -40°C ~ 125°C Type: Multiplexer Part Status: Active Supplier Device Package: 16-DHVQFN (2.5x3.5) Voltage Supply Source: Single Supply Circuit: 4 x 2:1 Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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PUMT1 |
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Nexperia USA Inc. |
Description: PUMT1 - PNP GENERAL PURPOSE DOUB Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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PXN5R4-30QLJ |
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Nexperia USA Inc. |
Description: PXN5R4-30QL/SOT8002/MLPAK33 Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2.5V @ 250µA |
auf Bestellung 12000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PXN5R4-30QL/SOT8002/MLPAK33 Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: MLPAK33 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) FET Type: N-Channel |
auf Bestellung 12000 Stücke Lieferzeit 21-28 Tag (e) |
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BZX58550-C62-QX |
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Nexperia USA Inc. |
Description: BZX58550-C62-Q/SOD523/SC-79 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 215 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
SOT89.jpg "BCV28,115") |
BCV28,115 |
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Nexperia USA Inc. |
Description: TRANS PNP DARL 30V 0.5A SOT89 Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 220MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6286 Stücke - Preis und Lieferfrist anzeigen
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74AUP2G02GD,125 |
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Nexperia USA Inc. |
Description: IC GATE NOR 2CH 2-INP 8XSON Current - Output High, Low: 4mA, 4mA Current - Quiescent (Max): 500 nA Number of Circuits: 2 Part Status: Obsolete Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF Logic Level - Low: 0.7V ~ 0.9V Logic Level - High: 1.6V ~ 2V Supplier Device Package: 8-XSON (2x3) Number of Inputs: 2 Voltage - Supply: 0.8V ~ 3.6V Operating Temperature: -40°C ~ 125°C Logic Type: NOR Gate Mounting Type: Surface Mount Package / Case: 8-XFDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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74HCT138PW,112 |
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Nexperia USA Inc. |
Description: IC DECODER/DEMUX 1X3:8 16TSSOP Type: Decoder/Demultiplexer Circuit: 1 x 3:8 Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Bulk Part Status: Obsolete Supplier Device Package: 16-TSSOP Voltage Supply Source: Single Supply Current - Output High, Low: 4mA, 4mA Independent Circuits: 1 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C |
auf Bestellung 72000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 15679 Stücke - Preis und Lieferfrist anzeigen
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74HCT04DB,112 |
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Nexperia USA Inc. |
Description: IC INVERTER 6CH 6-INP 14SSOP Logic Level - High: 2V Supplier Device Package: 14-SSOP Number of Inputs: 1 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-SSOP (0.209", 5.30mm Width) Packaging: Bulk Current - Quiescent (Max): 2 µA Number of Circuits: 6 Part Status: Active Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF Logic Level - Low: 0.8V |
auf Bestellung 67704 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4654 Stücke - Preis und Lieferfrist anzeigen
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| 74HCT688DB,118 |
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Nexperia USA Inc. |
Description: IDENTITY COMPARATOR, HCT SERIES, Packaging: Bulk Part Status: Obsolete |
auf Bestellung 2057 Stücke Lieferzeit 21-28 Tag (e) |
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MMBZ6V8AL,215 |
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Nexperia USA Inc. |
Description: TVS DIODE 4.5VWM 9.6VC TO236AB Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Part Status: Active Power Line Protection: No Power - Peak Pulse: 24W Voltage - Clamping (Max) @ Ipp: 9.6V Voltage - Breakdown (Min): 6.46V Bidirectional Channels: 1 Unidirectional Channels: 2 Supplier Device Package: TO-236AB Voltage - Reverse Standoff (Typ): 4.5V (Max) Current - Peak Pulse (10/1000µs): 2.5A Capacitance @ Frequency: 150pF @ 1MHz Applications: Automotive Operating Temperature: -55°C ~ 150°C (TA) Type: Zener Mounting Type: Surface Mount |
auf Bestellung 51000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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PZT2907A,115 |
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Nexperia USA Inc. |
Description: TRANS PNP 60V 0.6A SOT223 Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk Power - Max: 1.15 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 600 mA Part Status: Active Supplier Device Package: SOT-223 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA |
auf Bestellung 100000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4522 Stücke - Preis und Lieferfrist anzeigen
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74LVC1G08GF/S500,1 |
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Nexperia USA Inc. |
Description: 74LVC1G08GF - SINGLE 2-INPUT AND Part Status: Active Packaging: Bulk |
auf Bestellung 245000 Stücke Lieferzeit 21-28 Tag (e) |
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74LVC1G08GN,132 |
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Nexperia USA Inc. |
Description: NEXPERIA 74LVC1G08GN - AND GATE, Part Status: Active Packaging: Bulk |
auf Bestellung 145000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 283478 Stücke - Preis und Lieferfrist anzeigen
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74LVC1G08GM,115 |
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Nexperia USA Inc. |
Description: IC GATE AND 1CH 2-INP 6XSON Packaging: Cut Tape (CT) Current - Quiescent (Max): 4 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Logic Level - Low: 0.7V ~ 0.8V Logic Level - High: 1.7V ~ 2V Supplier Device Package: 6-XSON, SOT886 (1.45x1) Number of Inputs: 2 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: 6-XFDFN |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
| BAS21QA |
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Nexperia USA Inc. |
Description: BAS21 - RECTIFIER DIODE, 2 ELEME Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PESD3USB30Z |
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Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 15WLCSP Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6V Unidirectional Channels: 6 Supplier Device Package: 15-WLCSP (2.37x1.17) Voltage - Reverse Standoff (Typ): 5.5V (Max) Current - Peak Pulse (10/1000µs): 8A (8/20µs) Applications: HDMI Operating Temperature: -40°C ~ 85°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: 15-UFBGA, WLCSP Packaging: Bulk |
auf Bestellung 17350 Stücke Lieferzeit 21-28 Tag (e) |
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PESD1USB30Z |
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Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 5WLCSP Packaging: Bulk Package / Case: 5-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 85°C (TA) Applications: HDMI Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 5-WLCSP (0.77x1.17) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
auf Bestellung 87555 Stücke Lieferzeit 21-28 Tag (e) |
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PESD2USB3S/CZ | Nexperia USA Inc. |
Description: TVS DIODE UNIDIRECT 2-CH 10WLCSP Packaging: Tape & Reel (TR) Package / Case: 10-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.45pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 10-WLCSP (1.57x1.17) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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PESD1USB3S/CZ | Nexperia USA Inc. |
Description: TVS DIODE UNIDIRECT 1-CH 5WLCSP Packaging: Tape & Reel (TR) Package / Case: 5-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.45pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 5-WLCSP (0.77x1.17) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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BZB84-C56,215 |
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Nexperia USA Inc. |
Description: BZB84 SERIES - DUAL ZENER DIODES Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 200 Ohms Voltage - Zener (Nom) (Vz): 56 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Bulk |
auf Bestellung 51000 Stücke Lieferzeit 21-28 Tag (e) |
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BZB84-C11,215 |
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Nexperia USA Inc. |
Description: BZB84 SERIES - DUAL ZENER DIODES Current - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 20 Ohms Voltage - Zener (Nom) (Vz): 11 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Bulk |
auf Bestellung 318000 Stücke Lieferzeit 21-28 Tag (e) |
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BZB84-B3V0,215 |
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Nexperia USA Inc. |
Description: BZB84 SERIES - DUAL ZENER DIODES Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 95 Ohms Voltage - Zener (Nom) (Vz): 3 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2% |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
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BZB84-C2V4,215 |
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Nexperia USA Inc. |
Description: NEXPERIA BZB84-C2V4 - ZENER DIOD Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 100 Ohms Voltage - Zener (Nom) (Vz): 2.4 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Bulk Current - Reverse Leakage @ Vr: 50 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active |
auf Bestellung 17367 Stücke Lieferzeit 21-28 Tag (e) |
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BZB84-C16,215 |
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Nexperia USA Inc. |
Description: NEXPERIA BZB84-C16 - ZENER DIODE Part Status: Active Power - Max: 300 mW Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 16 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Bulk Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA |
auf Bestellung 54000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 27000 Stücke - Preis und Lieferfrist anzeigen
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BZB84-C20,215 |
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Nexperia USA Inc. |
Description: NEXPERIA BZB84-C20 - ZENER DIODE Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 55 Ohms Voltage - Zener (Nom) (Vz): 20 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Bulk Current - Reverse Leakage @ Vr: 50 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active |
auf Bestellung 27000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 29870 Stücke - Preis und Lieferfrist anzeigen
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74HC1G02GV,125 |
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Nexperia USA Inc. |
Description: IC GATE NOR 1CH 2-INP SC74A Part Status: Active Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF Logic Level - Low: 0.5V ~ 1.8V Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: SC-74A Number of Inputs: 2 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 125°C Logic Type: NOR Gate Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Bulk Current - Quiescent (Max): 20 µA Number of Circuits: 1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
 |
BC56-16PASX |
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Nexperia USA Inc. |
Description: TRANS NPN 80V 1A DFN2020D-3 Part Status: Active Supplier Device Package: DFN2020D-3 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 420 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||
| PDTA143ZQCZ |
|
Nexperia USA Inc. |
Description: PDTA143ZQC/SOT8009/DFN1412D-3 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| PDTA143XQC-QZ |
|
Nexperia USA Inc. |
Description: PDTA143XQC-Q/SOT8009/DFN1412D- Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTA143XQC-Q/SOT8009/DFN1412D- Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTA143EQB-QZ |
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Nexperia USA Inc. |
Description: PDTA143EQB-Q/SOT8015/DFN1110D- Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTA143EQB-Q/SOT8015/DFN1110D- Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTA143ZQC-QZ |
|
Nexperia USA Inc. |
Description: PDTA143ZQC-Q/SOT8009/DFN1412D- Current - Collector Cutoff (Max): 100nA Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Power - Max: 360 mW Current - Collector (Ic) (Max): 100 mA Part Status: Active Voltage - Collector Emitter Breakdown (Max): 50 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| PDTA143EQC-QZ |
|
Nexperia USA Inc. |
Description: PDTA143EQC-Q/SOT8009/DFN1412D- Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTA143EQC-Q/SOT8009/DFN1412D- Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTA143XQCZ |
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Nexperia USA Inc. |
Description: PDTA143XQC/SOT8009/DFN1412D-3 Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| PDTA143ZQB-QZ |
|
Nexperia USA Inc. |
Description: PDTA143ZQB-Q/SOT8015/DFN1110D- Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| PDTA143XQB-QZ |
|
Nexperia USA Inc. |
Description: PDTA143XQB-Q/SOT8015/DFN1110D- Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| PDTA143EQCZ |
|
Nexperia USA Inc. |
Description: PDTA143EQC/SOT8009/DFN1412D-3 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
 |
PDTA143EQAZ |
|
Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 3DFN Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1010D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Bulk Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 280 mW |
auf Bestellung 125000 Stücke Lieferzeit 21-28 Tag (e) |
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 |
PDTA143ZMB,315 |
|
Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 250MW 3DFN Part Status: Active Supplier Device Package: DFN1006B-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Bulk Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
auf Bestellung 70000 Stücke Lieferzeit 21-28 Tag (e) |
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PDTA143XQAZ |
|
Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 3DFN Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 280 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1010D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Bulk |
auf Bestellung 130000 Stücke Lieferzeit 21-28 Tag (e) |
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PDTA143ZQAZ |
|
Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 3DFN Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 280 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1010D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Bulk |
auf Bestellung 125000 Stücke Lieferzeit 21-28 Tag (e) |
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PDTA143TMB,315 |
|
Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V DFN1006B-3 Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Bulk Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 180 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1006B-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased |
auf Bestellung 70000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 129900 Stücke - Preis und Lieferfrist anzeigen
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| PDTC143ZQCZ |
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Nexperia USA Inc. |
Description: PDTC143ZQC/SOT8009/DFN1412D-3 Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTC143ZQC/SOT8009/DFN1412D-3 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTC143ZQB-QZ |
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Nexperia USA Inc. |
Description: PDTC143ZQB-Q/SOT8015/DFN1110D- Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Emitter Base (R2): 47 kOhms Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTC143ZQB-Q/SOT8015/DFN1110D- Frequency - Transition: 230 MHz Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTC143EQCZ |
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Nexperia USA Inc. |
Description: PDTC143EQC/SOT8009/DFN1412D-3 Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 4.7 kOhms Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 4.7 kOhms Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTC143EQC/SOT8009/DFN1412D-3 Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 360 mW Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTC143XQC-QZ |
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Nexperia USA Inc. |
Description: PDTC143XQC-Q/SOT8009/DFN1412D- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTC143XQC-Q/SOT8009/DFN1412D- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTC143XQCZ |
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Nexperia USA Inc. |
Description: PDTC143XQC/SOT8009/DFN1412D-3 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTC143XQC/SOT8009/DFN1412D-3 Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTC143XQB-QZ |
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Nexperia USA Inc. |
Description: PDTC143XQB-Q/SOT8015/DFN1110D- Resistor - Emitter Base (R2): 10 kOhms Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 50 V |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTC143XQB-Q/SOT8015/DFN1110D- Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTC143ZQC-QZ |
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Nexperia USA Inc. |
Description: PDTC143ZQC-Q/SOT8009/DFN1412D- Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTC143ZQC-Q/SOT8009/DFN1412D- Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTC143EQC-QZ |
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Nexperia USA Inc. |
Description: PDTC143EQC-Q/SOT8009/DFN1412D- Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTC143EQC-Q/SOT8009/DFN1412D- Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Frequency - Transition: 230 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| PDTC143EQB-QZ |
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Nexperia USA Inc. |
Description: PDTC143EQB-Q/SOT8015/DFN1110D- Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Frequency - Transition: 230 MHz Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Nexperia USA Inc. |
Description: PDTC143EQB-Q/SOT8015/DFN1110D- Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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PDTC143XQAZ |
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Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 3DFN Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Bulk Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 230 MHz Power - Max: 280 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1010D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V |
auf Bestellung 100000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
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 |
PDTC143XM,315 |
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Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 250MW SOT883 Part Status: Active Supplier Device Package: SOT-883 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Bulk Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 4.7 kOhms Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
auf Bestellung 80000 Stücke Lieferzeit 21-28 Tag (e) |
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 |
BZT52-B51J |
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Nexperia USA Inc. |
Description: DIODE ZENER 51V 590MW SOD123 Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 100 Ohms Voltage - Zener (Nom) (Vz): 51 V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±1.96% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Part Status: Active Power - Max: 590 mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
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| PSMN1R5-50YLHX |
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Hersteller: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 333W (Ta)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PSMN1R5-50YLH/SOT1023/4 LEADS
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 333W (Ta)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
| PSMN1R2-55SLHAX |
|
Hersteller: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
| PSMN1R2-55SLH |
|
Hersteller: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
| PSMN1R2-25YLD,115 |
Hersteller: Nexperia USA Inc.
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PSMN1R2-25YLD - N-CHANNEL 25V, 2
Packaging: Bulk
Part Status: Active
| PSMN1R7-25YLD115 |
|
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PSMN1R7-25YLD - POW
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: NOW NEXPERIA PSMN1R7-25YLD - POW
Packaging: Bulk
Part Status: Active
| PSMN1R1-30EL,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
auf Bestellung 4999 Stücke Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 7581 Stücke - Preis und Lieferfrist anzeigen
|
| 74AUP2G126DC,125 |
|
Hersteller: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 8VSSOP
Part Status: Active
Supplier Device Package: 8-VSSOP
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC BUF NON-INVERT 3.6V 8VSSOP
Part Status: Active
Supplier Device Package: 8-VSSOP
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Bulk
auf Bestellung 23326 Stücke - Preis und Lieferfrist anzeigen
| 74HCT10DB,112 |
|
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74HCT10DB - NAND GATE,
Part Status: Active
Packaging: Bulk
auf Bestellung 4056 Stücke Description: NEXPERIA 74HCT10DB - NAND GATE,
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
auf Bestellung 4492 Stücke - Preis und Lieferfrist anzeigen
|
| BZX585-C51,115 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 51V 300MW SOD523
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 66225 Stücke Description: DIODE ZENER 51V 300MW SOD523
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
auf Bestellung 360 Stücke - Preis und Lieferfrist anzeigen
|
| BZV85-C56,133 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 56V 1.3W DO41
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 39 V
auf Bestellung 13376 Stücke Description: DIODE ZENER 56V 1.3W DO41
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 39 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 52765 Stücke - Preis und Lieferfrist anzeigen
|
| 74HCU04BQ,115 |
|
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 6CH 6-INP 14DHVQFN
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Logic Level - Low: 0.3V ~ 1.2V
Logic Level - High: 1.7V ~ 4.8V
Supplier Device Package: 14-DHVQFN (2.5x3)
Number of Inputs: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Packaging: Bulk
Package / Case: 14-VFQFN Exposed Pad
auf Bestellung 9000 Stücke Description: IC INVERTER 6CH 6-INP 14DHVQFN
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Logic Level - Low: 0.3V ~ 1.2V
Logic Level - High: 1.7V ~ 4.8V
Supplier Device Package: 14-DHVQFN (2.5x3)
Number of Inputs: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Packaging: Bulk
Package / Case: 14-VFQFN Exposed Pad
Lieferzeit 21-28 Tag (e)
|
| 74ALVC02BQ,115 |
|
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 4CH 2-INP 14DHVQFN
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.2ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-DHVQFN (2.5x3)
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Bulk
auf Bestellung 30000 Stücke Description: IC GATE NOR 4CH 2-INP 14DHVQFN
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.2ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-DHVQFN (2.5x3)
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
auf Bestellung 12300 Stücke - Preis und Lieferfrist anzeigen
|
| PXP6R1-30QLJ |
|
Hersteller: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PXP6R1-30QL/SOT8002/MLPAK33
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| 74ALVC00PW,118 |
|
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.1ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
auf Bestellung 10000 Stücke Description: IC GATE NAND 4CH 2-INP 14TSSOP
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.1ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Lieferzeit 21-28 Tag (e)
auf Bestellung 23654 Stücke - Preis und Lieferfrist anzeigen
|
| 74ALVC00D,118 |
|
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14SO
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.1ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SO
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 17500 Stücke Description: IC GATE NAND 4CH 2-INP 14SO
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.1ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SO
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| BUK9D23-40EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 8A DFN2020MD-6
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 8A DFN2020MD-6
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
| BUK6D43-60EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 5A DFN2020MD-6
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 5A DFN2020MD-6
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
| 74HC20PW118 |
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14TSSOP
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Current - Quiescent (Max): 2 µA
Part Status: Active
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Packaging: Bulk
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 4
Current - Output High, Low: 5.2mA, 5.2mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NAND 2CH 4-INP 14TSSOP
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Current - Quiescent (Max): 2 µA
Part Status: Active
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Packaging: Bulk
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 4
Current - Output High, Low: 5.2mA, 5.2mA
| 74HC20D,653 |
|
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14SO
Current - Quiescent (Max): 2 µA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SO
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Number of Inputs: 4
Current - Output High, Low: 5.2mA, 5.2mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NAND 2CH 4-INP 14SO
Current - Quiescent (Max): 2 µA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SO
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Number of Inputs: 4
Current - Output High, Low: 5.2mA, 5.2mA
auf Bestellung 14401 Stücke - Preis und Lieferfrist anzeigen
| 74LVC257ABQ,115 |
|
Hersteller: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16DHVQFN
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Part Status: Active
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Voltage Supply Source: Single Supply
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MULTIPLEXER 4 X 2:1 16DHVQFN
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Part Status: Active
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Voltage Supply Source: Single Supply
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Bulk
| PUMT1 |
|
Hersteller: Nexperia USA Inc.
Description: PUMT1 - PNP GENERAL PURPOSE DOUB
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PUMT1 - PNP GENERAL PURPOSE DOUB
Packaging: Bulk
Part Status: Active
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| PXN5R4-30QLJ |
|
Hersteller: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 12000 Stücke Description: PXN5R4-30QL/SOT8002/MLPAK33
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
|
| PXN5R4-30QLJ |
|
Hersteller: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
auf Bestellung 12000 Stücke Description: PXN5R4-30QL/SOT8002/MLPAK33
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
|
| BZX58550-C62-QX |
|
Hersteller: Nexperia USA Inc.
Description: BZX58550-C62-Q/SOD523/SC-79
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BZX58550-C62-Q/SOD523/SC-79
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
| BCV28,115 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PNP DARL 30V 0.5A SOT89
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP DARL 30V 0.5A SOT89
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
auf Bestellung 6286 Stücke - Preis und Lieferfrist anzeigen
| 74AUP2G02GD,125 |
|
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 2CH 2-INP 8XSON
Current - Output High, Low: 4mA, 4mA
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Logic Level - Low: 0.7V ~ 0.9V
Logic Level - High: 1.6V ~ 2V
Supplier Device Package: 8-XSON (2x3)
Number of Inputs: 2
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 8-XFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NOR 2CH 2-INP 8XSON
Current - Output High, Low: 4mA, 4mA
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Logic Level - Low: 0.7V ~ 0.9V
Logic Level - High: 1.6V ~ 2V
Supplier Device Package: 8-XSON (2x3)
Number of Inputs: 2
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 8-XFDFN
Packaging: Cut Tape (CT)
| 74HCT138PW,112 |
|
Hersteller: Nexperia USA Inc.
Description: IC DECODER/DEMUX 1X3:8 16TSSOP
Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 4mA, 4mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
auf Bestellung 72000 Stücke Description: IC DECODER/DEMUX 1X3:8 16TSSOP
Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 4mA, 4mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Lieferzeit 21-28 Tag (e)
auf Bestellung 15679 Stücke - Preis und Lieferfrist anzeigen
|
| 74HCT04DB,112 |
|
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 6CH 6-INP 14SSOP
Logic Level - High: 2V
Supplier Device Package: 14-SSOP
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
Logic Level - Low: 0.8V
auf Bestellung 67704 Stücke Description: IC INVERTER 6CH 6-INP 14SSOP
Logic Level - High: 2V
Supplier Device Package: 14-SSOP
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
Logic Level - Low: 0.8V
Lieferzeit 21-28 Tag (e)
auf Bestellung 4654 Stücke - Preis und Lieferfrist anzeigen
|
| 74HCT688DB,118 |
|
Hersteller: Nexperia USA Inc.
Description: IDENTITY COMPARATOR, HCT SERIES,
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 2057 Stücke Description: IDENTITY COMPARATOR, HCT SERIES,
Packaging: Bulk
Part Status: Obsolete
Lieferzeit 21-28 Tag (e)
|
| MMBZ6V8AL,215 |
|
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 4.5VWM 9.6VC TO236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 9.6V
Voltage - Breakdown (Min): 6.46V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 4.5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A
Capacitance @ Frequency: 150pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
auf Bestellung 51000 Stücke Description: TVS DIODE 4.5VWM 9.6VC TO236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 9.6V
Voltage - Breakdown (Min): 6.46V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 4.5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A
Capacitance @ Frequency: 150pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
| PZT2907A,115 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 0.6A SOT223
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Power - Max: 1.15 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
auf Bestellung 100000 Stücke Description: TRANS PNP 60V 0.6A SOT223
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Power - Max: 1.15 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 4522 Stücke - Preis und Lieferfrist anzeigen
|
| 74LVC1G08GF/S500,1 |
|
Hersteller: Nexperia USA Inc.
Description: 74LVC1G08GF - SINGLE 2-INPUT AND
Part Status: Active
Packaging: Bulk
auf Bestellung 245000 Stücke Description: 74LVC1G08GF - SINGLE 2-INPUT AND
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| 74LVC1G08GN,132 |
|
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74LVC1G08GN - AND GATE,
Part Status: Active
Packaging: Bulk
auf Bestellung 145000 Stücke Description: NEXPERIA 74LVC1G08GN - AND GATE,
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
auf Bestellung 283478 Stücke - Preis und Lieferfrist anzeigen
|
| 74LVC1G08GM,115 |
|
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 4 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 4 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
| BAS21QA |
|
Hersteller: Nexperia USA Inc.
Description: BAS21 - RECTIFIER DIODE, 2 ELEME
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BAS21 - RECTIFIER DIODE, 2 ELEME
Packaging: Bulk
Part Status: Active
| PESD3USB30Z |
|
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 15WLCSP
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 6
Supplier Device Package: 15-WLCSP (2.37x1.17)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 15-UFBGA, WLCSP
Packaging: Bulk
auf Bestellung 17350 Stücke Description: TVS DIODE 5.5VWM 15WLCSP
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 6
Supplier Device Package: 15-WLCSP (2.37x1.17)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 15-UFBGA, WLCSP
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| PESD1USB30Z |
|
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 5WLCSP
Packaging: Bulk
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
auf Bestellung 87555 Stücke Description: TVS DIODE 5.5VWM 5WLCSP
Packaging: Bulk
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Lieferzeit 21-28 Tag (e)
|
| PESD2USB3S/CZ |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE UNIDIRECT 2-CH 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE UNIDIRECT 2-CH 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
| PESD1USB3S/CZ |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE UNIDIRECT 1-CH 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE UNIDIRECT 1-CH 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
| BZB84-C56,215 |
|
Hersteller: Nexperia USA Inc.
Description: BZB84 SERIES - DUAL ZENER DIODES
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 51000 Stücke Description: BZB84 SERIES - DUAL ZENER DIODES
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| BZB84-C11,215 |
|
Hersteller: Nexperia USA Inc.
Description: BZB84 SERIES - DUAL ZENER DIODES
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 318000 Stücke Description: BZB84 SERIES - DUAL ZENER DIODES
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| BZB84-B3V0,215 |
|
Hersteller: Nexperia USA Inc.
Description: BZB84 SERIES - DUAL ZENER DIODES
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BZB84 SERIES - DUAL ZENER DIODES
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
| BZB84-C2V4,215 |
|
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BZB84-C2V4 - ZENER DIOD
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
auf Bestellung 17367 Stücke Description: NEXPERIA BZB84-C2V4 - ZENER DIOD
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Lieferzeit 21-28 Tag (e)
|
| BZB84-C16,215 |
|
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BZB84-C16 - ZENER DIODE
Part Status: Active
Power - Max: 300 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
auf Bestellung 54000 Stücke Description: NEXPERIA BZB84-C16 - ZENER DIODE
Part Status: Active
Power - Max: 300 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 27000 Stücke - Preis und Lieferfrist anzeigen
|
| BZB84-C20,215 |
|
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BZB84-C20 - ZENER DIODE
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
auf Bestellung 27000 Stücke Description: NEXPERIA BZB84-C20 - ZENER DIODE
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 29870 Stücke - Preis und Lieferfrist anzeigen
|
| 74HC1G02GV,125 |
|
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 1CH 2-INP SC74A
Part Status: Active
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Bulk
Current - Quiescent (Max): 20 µA
Number of Circuits: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC GATE NOR 1CH 2-INP SC74A
Part Status: Active
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Bulk
Current - Quiescent (Max): 20 µA
Number of Circuits: 1
| BC56-16PASX |
|
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 1A DFN2020D-3
Part Status: Active
Supplier Device Package: DFN2020D-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 80V 1A DFN2020D-3
Part Status: Active
Supplier Device Package: DFN2020D-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Bulk
| PDTA143ZQCZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143ZQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PDTA143ZQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
| PDTA143XQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143XQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke Description: PDTA143XQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTA143XQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143XQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke Description: PDTA143XQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTA143EQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143EQB-Q/SOT8015/DFN1110D-
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke Description: PDTA143EQB-Q/SOT8015/DFN1110D-
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTA143EQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143EQB-Q/SOT8015/DFN1110D-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke Description: PDTA143EQB-Q/SOT8015/DFN1110D-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTA143ZQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143ZQC-Q/SOT8009/DFN1412D-
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power - Max: 360 mW
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PDTA143ZQC-Q/SOT8009/DFN1412D-
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power - Max: 360 mW
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 50 V
| PDTA143EQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143EQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke Description: PDTA143EQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTA143EQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143EQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke Description: PDTA143EQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTA143XQCZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143XQC/SOT8009/DFN1412D-3
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PDTA143XQC/SOT8009/DFN1412D-3
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
| PDTA143ZQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143ZQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PDTA143ZQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
| PDTA143XQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143XQB-Q/SOT8015/DFN1110D-
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PDTA143XQB-Q/SOT8015/DFN1110D-
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
| PDTA143EQCZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTA143EQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PDTA143EQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
| PDTA143EQAZ |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 3DFN
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
auf Bestellung 125000 Stücke Description: TRANS PREBIAS PNP 3DFN
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
Lieferzeit 21-28 Tag (e)
|
| PDTA143ZMB,315 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 250MW 3DFN
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 70000 Stücke Description: TRANS PREBIAS PNP 250MW 3DFN
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Lieferzeit 21-28 Tag (e)
|
| PDTA143XQAZ |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 3DFN
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
auf Bestellung 130000 Stücke Description: TRANS PREBIAS PNP 3DFN
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| PDTA143ZQAZ |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 3DFN
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
auf Bestellung 125000 Stücke Description: TRANS PREBIAS PNP 3DFN
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
|
| PDTA143TMB,315 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V DFN1006B-3
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
auf Bestellung 70000 Stücke Description: TRANS PREBIAS PNP 50V DFN1006B-3
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Lieferzeit 21-28 Tag (e)
auf Bestellung 129900 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143ZQCZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQC/SOT8009/DFN1412D-3
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke Description: PDTC143ZQC/SOT8009/DFN1412D-3
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143ZQCZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
auf Bestellung 5000 Stücke Description: PDTC143ZQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143ZQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQB-Q/SOT8015/DFN1110D-
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Emitter Base (R2): 47 kOhms
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke Description: PDTC143ZQB-Q/SOT8015/DFN1110D-
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Emitter Base (R2): 47 kOhms
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143ZQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQB-Q/SOT8015/DFN1110D-
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke Description: PDTC143ZQB-Q/SOT8015/DFN1110D-
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143EQCZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143EQC/SOT8009/DFN1412D-3
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke Description: PDTC143EQC/SOT8009/DFN1412D-3
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143EQCZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143EQC/SOT8009/DFN1412D-3
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
auf Bestellung 5000 Stücke Description: PDTC143EQC/SOT8009/DFN1412D-3
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143XQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143XQC-Q/SOT8009/DFN1412D-
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke Description: PDTC143XQC-Q/SOT8009/DFN1412D-
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143XQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143XQC-Q/SOT8009/DFN1412D-
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
auf Bestellung 5000 Stücke Description: PDTC143XQC-Q/SOT8009/DFN1412D-
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143XQCZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143XQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
auf Bestellung 5000 Stücke Description: PDTC143XQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143XQCZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143XQC/SOT8009/DFN1412D-3
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
auf Bestellung 5000 Stücke Description: PDTC143XQC/SOT8009/DFN1412D-3
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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| PDTC143XQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143XQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 10 kOhms
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
auf Bestellung 5000 Stücke Description: PDTC143XQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 10 kOhms
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143XQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143XQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke Description: PDTC143XQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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| PDTC143ZQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQC-Q/SOT8009/DFN1412D-
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 5000 Stücke Description: PDTC143ZQC-Q/SOT8009/DFN1412D-
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143ZQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQC-Q/SOT8009/DFN1412D-
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 5000 Stücke Description: PDTC143ZQC-Q/SOT8009/DFN1412D-
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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| PDTC143EQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143EQC-Q/SOT8009/DFN1412D-
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke Description: PDTC143EQC-Q/SOT8009/DFN1412D-
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143EQC-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143EQC-Q/SOT8009/DFN1412D-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke Description: PDTC143EQC-Q/SOT8009/DFN1412D-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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| PDTC143EQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143EQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke Description: PDTC143EQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
| PDTC143EQB-QZ |
|
Hersteller: Nexperia USA Inc.
Description: PDTC143EQB-Q/SOT8015/DFN1110D-
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke Description: PDTC143EQB-Q/SOT8015/DFN1110D-
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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| PDTC143XQAZ |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 3DFN
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
auf Bestellung 100000 Stücke Description: TRANS PREBIAS NPN 3DFN
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
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| PDTC143XM,315 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 250MW SOT883
Part Status: Active
Supplier Device Package: SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 80000 Stücke Description: TRANS PREBIAS NPN 250MW SOT883
Part Status: Active
Supplier Device Package: SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Lieferzeit 21-28 Tag (e)
|
| BZT52-B51J |
|
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 51V 590MW SOD123
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.96%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Power - Max: 590 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 51V 590MW SOD123
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.96%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Power - Max: 590 mW
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
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