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Foto Bezeichnung Tech.inf. Hersteller Beschreibung Informationen zu Lagerverfügbarkeit und Lieferzeiten
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PSMN1R5-50YLHX PSMN1R5-50YLHX PSMN1R5-50YLH.pdf Nexperia USA Inc. Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 333W (Ta)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R2-55SLHAX PSMN1R2-55SLH.pdf Nexperia USA Inc. Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R2-55SLH PSMN1R2-55SLH PSMN1R2-55SLH.pdf Nexperia USA Inc. Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R2-25YLD,115 PSMN1R2-25YLD,115 Nexperia USA Inc. Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R7-25YLD115 NEXP-S-A0003107878-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: NOW NEXPERIA PSMN1R7-25YLD - POW
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R1-30EL,127 PSMN1R1-30EL,127 PSMN1R1-30EL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
auf Bestellung 4999 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7581 Stücke - Preis und Lieferfrist anzeigen
332+ 2.17 EUR
74AUP2G126DC,125 74AUP2G126DC,125 74AUP2G126.pdf Nexperia USA Inc. Description: IC BUF NON-INVERT 3.6V 8VSSOP
Part Status: Active
Supplier Device Package: 8-VSSOP
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23326 Stücke - Preis und Lieferfrist anzeigen
74HCT10DB,112 74HCT10DB,112 PHGL-S-A0002307496-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: NEXPERIA 74HCT10DB - NAND GATE,
Part Status: Active
Packaging: Bulk
auf Bestellung 4056 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4492 Stücke - Preis und Lieferfrist anzeigen
1402+ 0.5 EUR
BZX585-C51,115 BZX585-C51,115 NEXP-S-A0003107844-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 51V 300MW SOD523
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 66225 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 360 Stücke - Preis und Lieferfrist anzeigen
11268+ 0.065 EUR
BZV85-C56,133 BZV85-C56,133 NEXP-S-A0002883904-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE ZENER 56V 1.3W DO41
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 39 V
auf Bestellung 13376 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 52765 Stücke - Preis und Lieferfrist anzeigen
9583+ 0.076 EUR
74HCU04BQ,115 74HCU04BQ,115 74HCU04.pdf Nexperia USA Inc. Description: IC INVERTER 6CH 6-INP 14DHVQFN
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Logic Level - Low: 0.3V ~ 1.2V
Logic Level - High: 1.7V ~ 4.8V
Supplier Device Package: 14-DHVQFN (2.5x3)
Number of Inputs: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Packaging: Bulk
Package / Case: 14-VFQFN Exposed Pad
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
2749+ 0.26 EUR
74ALVC02BQ,115 74ALVC02BQ,115 74ALVC02.pdf Nexperia USA Inc. Description: IC GATE NOR 4CH 2-INP 14DHVQFN
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.2ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-DHVQFN (2.5x3)
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Bulk
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12300 Stücke - Preis und Lieferfrist anzeigen
2559+ 0.29 EUR
PXP6R1-30QLJ PXP6R1-30QL.pdf Nexperia USA Inc. Description: PXP6R1-30QL/SOT8002/MLPAK33
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74ALVC00PW,118 74ALVC00PW,118 74ALVC00.pdf Nexperia USA Inc. Description: IC GATE NAND 4CH 2-INP 14TSSOP
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.1ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23654 Stücke - Preis und Lieferfrist anzeigen
2688+ 0.27 EUR
74ALVC00D,118 74ALVC00D,118 74ALVC00.pdf Nexperia USA Inc. Description: IC GATE NAND 4CH 2-INP 14SO
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.1ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SO
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 17500 Stücke
Lieferzeit 21-28 Tag (e)
2670+ 0.27 EUR
BUK9D23-40EX BUK9D23-40EX BUK9D23-40E.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 8A DFN2020MD-6
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK6D43-60EX BUK6D43-60EX BUK6D43-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 5A DFN2020MD-6
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74HC20PW118 74HC20PW118 Nexperia USA Inc. Description: IC GATE NAND 2CH 4-INP 14TSSOP
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Current - Quiescent (Max): 2 µA
Part Status: Active
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Packaging: Bulk
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 4
Current - Output High, Low: 5.2mA, 5.2mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74HC20D,653 74HC20D,653 74HC_HCT20.pdf Nexperia USA Inc. Description: IC GATE NAND 2CH 4-INP 14SO
Current - Quiescent (Max): 2 µA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SO
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Number of Inputs: 4
Current - Output High, Low: 5.2mA, 5.2mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14401 Stücke - Preis und Lieferfrist anzeigen
74LVC257ABQ,115 74LVC257ABQ,115 74LVC257A.pdf Nexperia USA Inc. Description: IC MULTIPLEXER 4 X 2:1 16DHVQFN
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Part Status: Active
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Voltage Supply Source: Single Supply
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PUMT1 PUMT1 PHGLS19727-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: PUMT1 - PNP GENERAL PURPOSE DOUB
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
PXN5R4-30QLJ PXN5R4-30QLJ PXN5R4-30QL.pdf Nexperia USA Inc. Description: PXN5R4-30QL/SOT8002/MLPAK33
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.67 EUR
6000+ 0.63 EUR
Nexperia USA Inc. Description: PXN5R4-30QL/SOT8002/MLPAK33
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
16+ 1.72 EUR
18+ 1.51 EUR
100+ 1.16 EUR
500+ 0.92 EUR
1000+ 0.73 EUR
BZX58550-C62-QX BZX58550-C62-QX BZX58550-Q_SER.pdf Nexperia USA Inc. Description: BZX58550-C62-Q/SOD523/SC-79
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BCV28,115 BCV28,115 BCV28_48.pdf Nexperia USA Inc. Description: TRANS PNP DARL 30V 0.5A SOT89
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6286 Stücke - Preis und Lieferfrist anzeigen
74AUP2G02GD,125 74AUP2G02GD,125 74AUP2G02.pdf Nexperia USA Inc. Description: IC GATE NOR 2CH 2-INP 8XSON
Current - Output High, Low: 4mA, 4mA
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Logic Level - Low: 0.7V ~ 0.9V
Logic Level - High: 1.6V ~ 2V
Supplier Device Package: 8-XSON (2x3)
Number of Inputs: 2
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 8-XFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74HCT138PW,112 74HCT138PW,112 74HC_HCT138.pdf Nexperia USA Inc. Description: IC DECODER/DEMUX 1X3:8 16TSSOP
Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 4mA, 4mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
auf Bestellung 72000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15679 Stücke - Preis und Lieferfrist anzeigen
2177+ 0.33 EUR
74HCT04DB,112 74HCT04DB,112 74HC_HCT04.pdf Nexperia USA Inc. Description: IC INVERTER 6CH 6-INP 14SSOP
Logic Level - High: 2V
Supplier Device Package: 14-SSOP
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
Logic Level - Low: 0.8V
auf Bestellung 67704 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4654 Stücke - Preis und Lieferfrist anzeigen
1986+ 0.37 EUR
74HCT688DB,118 74HC(T)688_Rev_Feb2017.pdf Nexperia USA Inc. Description: IDENTITY COMPARATOR, HCT SERIES,
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 2057 Stücke
Lieferzeit 21-28 Tag (e)
848+ 0.85 EUR
MMBZ6V8AL,215 MMBZ6V8AL,215 NEXP-S-A0002912337-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: TVS DIODE 4.5VWM 9.6VC TO236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 9.6V
Voltage - Breakdown (Min): 6.46V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 4.5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A
Capacitance @ Frequency: 150pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
auf Bestellung 51000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
11224+ 0.065 EUR
PZT2907A,115 PZT2907A,115 PZT2907A.pdf Nexperia USA Inc. Description: TRANS PNP 60V 0.6A SOT223
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Power - Max: 1.15 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
auf Bestellung 100000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4522 Stücke - Preis und Lieferfrist anzeigen
4752+ 0.15 EUR
74LVC1G08GF/S500,1 74LVC1G08GF/S500,1 PHGLS25110-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: 74LVC1G08GF - SINGLE 2-INPUT AND
Part Status: Active
Packaging: Bulk
auf Bestellung 245000 Stücke
Lieferzeit 21-28 Tag (e)
780+ 0.92 EUR
74LVC1G08GN,132 74LVC1G08GN,132 PHGLS25110-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: NEXPERIA 74LVC1G08GN - AND GATE,
Part Status: Active
Packaging: Bulk
auf Bestellung 145000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 283478 Stücke - Preis und Lieferfrist anzeigen
3267+ 0.22 EUR
74LVC1G08GM,115 74LVC1G08GM,115 74LVC1G08.pdf Nexperia USA Inc. Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 4 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS21QA BAS21QA.pdf Nexperia USA Inc. Description: BAS21 - RECTIFIER DIODE, 2 ELEME
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PESD3USB30Z PESD3USB30Z PESDxUSB30.pdf Nexperia USA Inc. Description: TVS DIODE 5.5VWM 15WLCSP
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 6
Supplier Device Package: 15-WLCSP (2.37x1.17)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 15-UFBGA, WLCSP
Packaging: Bulk
auf Bestellung 17350 Stücke
Lieferzeit 21-28 Tag (e)
1159+ 0.64 EUR
PESD1USB30Z PESD1USB30Z PESDxUSB30.pdf Nexperia USA Inc. Description: TVS DIODE 5.5VWM 5WLCSP
Packaging: Bulk
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
auf Bestellung 87555 Stücke
Lieferzeit 21-28 Tag (e)
3479+ 0.21 EUR
PESD2USB3S/CZ PESD2USB3S/CZ Nexperia USA Inc. Description: TVS DIODE UNIDIRECT 2-CH 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PESD1USB3S/CZ PESD1USB3S/CZ Nexperia USA Inc. Description: TVS DIODE UNIDIRECT 1-CH 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZB84-C56,215 BZB84-C56,215 BZB84_SER.pdf Nexperia USA Inc. Description: BZB84 SERIES - DUAL ZENER DIODES
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 51000 Stücke
Lieferzeit 21-28 Tag (e)
15000+ 0.049 EUR
BZB84-C11,215 BZB84-C11,215 BZB84_SER.pdf Nexperia USA Inc. Description: BZB84 SERIES - DUAL ZENER DIODES
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 318000 Stücke
Lieferzeit 21-28 Tag (e)
15000+ 0.049 EUR
BZB84-B3V0,215 BZB84-B3V0,215 BZB84_SER.pdf Nexperia USA Inc. Description: BZB84 SERIES - DUAL ZENER DIODES
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZB84-C2V4,215 BZB84-C2V4,215 BZB84_SER.pdf Nexperia USA Inc. Description: NEXPERIA BZB84-C2V4 - ZENER DIOD
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
auf Bestellung 17367 Stücke
Lieferzeit 21-28 Tag (e)
17367+ 0.05 EUR
BZB84-C16,215 BZB84-C16,215 PHGLS18928-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: NEXPERIA BZB84-C16 - ZENER DIODE
Part Status: Active
Power - Max: 300 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
auf Bestellung 54000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 27000 Stücke - Preis und Lieferfrist anzeigen
15000+ 0.049 EUR
BZB84-C20,215 BZB84-C20,215 PHGLS18928-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: NEXPERIA BZB84-C20 - ZENER DIODE
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
auf Bestellung 27000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 29870 Stücke - Preis und Lieferfrist anzeigen
15000+ 0.049 EUR
74HC1G02GV,125 74HC1G02GV,125 74HC_HCT1G02.pdf Nexperia USA Inc. Description: IC GATE NOR 1CH 2-INP SC74A
Part Status: Active
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Bulk
Current - Quiescent (Max): 20 µA
Number of Circuits: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BC56-16PASX BC56-16PASX NEXP-S-A0002912161-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: TRANS NPN 80V 1A DFN2020D-3
Part Status: Active
Supplier Device Package: DFN2020D-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143ZQCZ PDTA143X_TO_124XQC_SER.pdf Nexperia USA Inc. Description: PDTA143ZQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143XQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf Nexperia USA Inc. Description: PDTA143XQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.11 EUR
Nexperia USA Inc. Description: PDTA143XQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
38+ 0.7 EUR
46+ 0.57 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
PDTA143EQB-QZ PDTA143_114_124_144EQB-Q_SER.pdf Nexperia USA Inc. Description: PDTA143EQB-Q/SOT8015/DFN1110D-
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.099 EUR
Nexperia USA Inc. Description: PDTA143EQB-Q/SOT8015/DFN1110D-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
40+ 0.65 EUR
49+ 0.53 EUR
100+ 0.28 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTA143ZQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf Nexperia USA Inc. Description: PDTA143ZQC-Q/SOT8009/DFN1412D-
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power - Max: 360 mW
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143EQC-QZ PDTA143_114_124_144EQC-Q_SER.pdf Nexperia USA Inc. Description: PDTA143EQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.11 EUR
Nexperia USA Inc. Description: PDTA143EQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
38+ 0.7 EUR
46+ 0.57 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
PDTA143XQCZ PDTA143X_TO_124XQC_SER.pdf Nexperia USA Inc. Description: PDTA143XQC/SOT8009/DFN1412D-3
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143ZQB-QZ PDTA143X_TO_124XQB-Q_SER.pdf Nexperia USA Inc. Description: PDTA143ZQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143XQB-QZ PDTA143X_TO_124XQB-Q_SER.pdf Nexperia USA Inc. Description: PDTA143XQB-Q/SOT8015/DFN1110D-
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143EQCZ PDTA143_114_124_144EQC_SER.pdf Nexperia USA Inc. Description: PDTA143EQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143EQAZ PDTA143EQAZ PDTA143_114_124_144EQA_SER.pdf Nexperia USA Inc. Description: TRANS PREBIAS PNP 3DFN
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
auf Bestellung 125000 Stücke
Lieferzeit 21-28 Tag (e)
11446+ 0.065 EUR
PDTA143ZMB,315 PDTA143ZMB,315 PDTA143ZMB.pdf Nexperia USA Inc. Description: TRANS PREBIAS PNP 250MW 3DFN
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 70000 Stücke
Lieferzeit 21-28 Tag (e)
13479+ 0.055 EUR
PDTA143XQAZ PDTA143XQAZ PDTA143X_123J_134Z_114YQA_SER.pdf Nexperia USA Inc. Description: TRANS PREBIAS PNP 3DFN
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
auf Bestellung 130000 Stücke
Lieferzeit 21-28 Tag (e)
11446+ 0.065 EUR
PDTA143ZQAZ PDTA143ZQAZ PDTA143X_123J_134Z_114YQA_SER.pdf Nexperia USA Inc. Description: TRANS PREBIAS PNP 3DFN
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
auf Bestellung 125000 Stücke
Lieferzeit 21-28 Tag (e)
11446+ 0.065 EUR
PDTA143TMB,315 PDTA143TMB,315 PHGLS24725-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: TRANS PREBIAS PNP 50V DFN1006B-3
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
auf Bestellung 70000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 129900 Stücke - Preis und Lieferfrist anzeigen
13479+ 0.055 EUR
PDTC143ZQCZ PDTC143X_TO_124XQC_SER.pdf Nexperia USA Inc. Description: PDTC143ZQC/SOT8009/DFN1412D-3
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.098 EUR
Nexperia USA Inc. Description: PDTC143ZQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
40+ 0.65 EUR
50+ 0.53 EUR
100+ 0.28 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143ZQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf Nexperia USA Inc. Description: PDTC143ZQB-Q/SOT8015/DFN1110D-
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Emitter Base (R2): 47 kOhms
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.099 EUR
Nexperia USA Inc. Description: PDTC143ZQB-Q/SOT8015/DFN1110D-
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
40+ 0.65 EUR
49+ 0.53 EUR
100+ 0.28 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143EQCZ PDTC143_114_124_144EQC_SER.pdf Nexperia USA Inc. Description: PDTC143EQC/SOT8009/DFN1412D-3
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.098 EUR
Nexperia USA Inc. Description: PDTC143EQC/SOT8009/DFN1412D-3
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
40+ 0.65 EUR
50+ 0.53 EUR
100+ 0.28 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143XQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf Nexperia USA Inc. Description: PDTC143XQC-Q/SOT8009/DFN1412D-
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.1 EUR
Nexperia USA Inc. Description: PDTC143XQC-Q/SOT8009/DFN1412D-
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
39+ 0.68 EUR
47+ 0.56 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
PDTC143XQCZ PDTC143X_TO_124XQC_SER.pdf Nexperia USA Inc. Description: PDTC143XQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.098 EUR
Nexperia USA Inc. Description: PDTC143XQC/SOT8009/DFN1412D-3
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
40+ 0.65 EUR
50+ 0.53 EUR
100+ 0.28 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143XQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf Nexperia USA Inc. Description: PDTC143XQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 10 kOhms
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.099 EUR
Nexperia USA Inc. Description: PDTC143XQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
40+ 0.65 EUR
49+ 0.53 EUR
100+ 0.28 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143ZQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf Nexperia USA Inc. Description: PDTC143ZQC-Q/SOT8009/DFN1412D-
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.1 EUR
Nexperia USA Inc. Description: PDTC143ZQC-Q/SOT8009/DFN1412D-
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
39+ 0.68 EUR
47+ 0.56 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
PDTC143EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf Nexperia USA Inc. Description: PDTC143EQC-Q/SOT8009/DFN1412D-
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.1 EUR
Nexperia USA Inc. Description: PDTC143EQC-Q/SOT8009/DFN1412D-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
39+ 0.68 EUR
47+ 0.56 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
PDTC143EQB-QZ PDTC143_114_124_144EQB-Q_SER.pdf Nexperia USA Inc. Description: PDTC143EQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
5000+ 0.099 EUR
Nexperia USA Inc. Description: PDTC143EQB-Q/SOT8015/DFN1110D-
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
40+ 0.65 EUR
49+ 0.53 EUR
100+ 0.28 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143XQAZ PDTC143XQAZ PDTC143X_123J_143Z_114YQA_SER.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN 3DFN
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
auf Bestellung 100000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
11446+ 0.065 EUR
PDTC143XM,315 PDTC143XM,315 PDTC143X_SER.pdf Nexperia USA Inc. Description: TRANS PREBIAS NPN 250MW SOT883
Part Status: Active
Supplier Device Package: SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 80000 Stücke
Lieferzeit 21-28 Tag (e)
12596+ 0.058 EUR
BZT52-B51J BZT52-B51J BZT52-B_SER.pdf Nexperia USA Inc. Description: DIODE ZENER 51V 590MW SOD123
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.96%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Power - Max: 590 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
PSMN1R5-50YLHX PSMN1R5-50YLH.pdf
PSMN1R5-50YLHX
Hersteller: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 333W (Ta)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R2-55SLHAX PSMN1R2-55SLH.pdf
Hersteller: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R2-55SLH PSMN1R2-55SLH.pdf
PSMN1R2-55SLH
Hersteller: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R2-25YLD,115
PSMN1R2-25YLD,115
Hersteller: Nexperia USA Inc.
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R7-25YLD115 NEXP-S-A0003107878-1.pdf?t.download=true&u=5oefqw
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PSMN1R7-25YLD - POW
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN1R1-30EL,127 PSMN1R1-30EL.pdf
PSMN1R1-30EL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
auf Bestellung 4999 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7581 Stücke - Preis und Lieferfrist anzeigen
332+ 2.17 EUR
74AUP2G126DC,125 74AUP2G126.pdf
74AUP2G126DC,125
Hersteller: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 8VSSOP
Part Status: Active
Supplier Device Package: 8-VSSOP
Current - Output High, Low: 4mA, 4mA
Number of Bits per Element: 1
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 23326 Stücke - Preis und Lieferfrist anzeigen
74HCT10DB,112 PHGL-S-A0002307496-1.pdf?t.download=true&u=5oefqw
74HCT10DB,112
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74HCT10DB - NAND GATE,
Part Status: Active
Packaging: Bulk
auf Bestellung 4056 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4492 Stücke - Preis und Lieferfrist anzeigen
1402+ 0.5 EUR
BZX585-C51,115 NEXP-S-A0003107844-1.pdf?t.download=true&u=5oefqw
BZX585-C51,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 51V 300MW SOD523
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 66225 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 360 Stücke - Preis und Lieferfrist anzeigen
11268+ 0.065 EUR
BZV85-C56,133 NEXP-S-A0002883904-1.pdf?t.download=true&u=5oefqw
BZV85-C56,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 56V 1.3W DO41
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 39 V
auf Bestellung 13376 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 52765 Stücke - Preis und Lieferfrist anzeigen
9583+ 0.076 EUR
74HCU04BQ,115 74HCU04.pdf
74HCU04BQ,115
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 6CH 6-INP 14DHVQFN
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 12ns @ 6V, 50pF
Logic Level - Low: 0.3V ~ 1.2V
Logic Level - High: 1.7V ~ 4.8V
Supplier Device Package: 14-DHVQFN (2.5x3)
Number of Inputs: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Packaging: Bulk
Package / Case: 14-VFQFN Exposed Pad
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
2749+ 0.26 EUR
74ALVC02BQ,115 74ALVC02.pdf
74ALVC02BQ,115
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 4CH 2-INP 14DHVQFN
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.2ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-DHVQFN (2.5x3)
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Bulk
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12300 Stücke - Preis und Lieferfrist anzeigen
2559+ 0.29 EUR
PXP6R1-30QLJ PXP6R1-30QL.pdf
Hersteller: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74ALVC00PW,118 74ALVC00.pdf
74ALVC00PW,118
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.1ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
auf Bestellung 10000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23654 Stücke - Preis und Lieferfrist anzeigen
2688+ 0.27 EUR
74ALVC00D,118 74ALVC00.pdf
74ALVC00D,118
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14SO
Current - Quiescent (Max): 20 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 2.1ns @ 3.3V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 14-SO
Number of Inputs: 2
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 17500 Stücke
Lieferzeit 21-28 Tag (e)
2670+ 0.27 EUR
BUK9D23-40EX BUK9D23-40E.pdf
BUK9D23-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 8A DFN2020MD-6
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK6D43-60EX BUK6D43-60E.pdf
BUK6D43-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 5A DFN2020MD-6
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Last Time Buy
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74HC20PW118
74HC20PW118
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14TSSOP
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Current - Quiescent (Max): 2 µA
Part Status: Active
Number of Circuits: 2
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Packaging: Bulk
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 4
Current - Output High, Low: 5.2mA, 5.2mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74HC20D,653 74HC_HCT20.pdf
74HC20D,653
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14SO
Current - Quiescent (Max): 2 µA
Number of Circuits: 2
Part Status: Active
Max Propagation Delay @ V, Max CL: 15ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-SO
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Number of Inputs: 4
Current - Output High, Low: 5.2mA, 5.2mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14401 Stücke - Preis und Lieferfrist anzeigen
74LVC257ABQ,115 74LVC257A.pdf
74LVC257ABQ,115
Hersteller: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16DHVQFN
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Part Status: Active
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Voltage Supply Source: Single Supply
Circuit: 4 x 2:1
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PUMT1 PHGLS19727-1.pdf?t.download=true&u=5oefqw
PUMT1
Hersteller: Nexperia USA Inc.
Description: PUMT1 - PNP GENERAL PURPOSE DOUB
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
PXN5R4-30QLJ PXN5R4-30QL.pdf
PXN5R4-30QLJ
Hersteller: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.67 EUR
6000+ 0.63 EUR
PXN5R4-30QLJ PXN5R4-30QL.pdf
PXN5R4-30QLJ
Hersteller: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MLPAK33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
FET Type: N-Channel
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
16+ 1.72 EUR
18+ 1.51 EUR
100+ 1.16 EUR
500+ 0.92 EUR
1000+ 0.73 EUR
BZX58550-C62-QX BZX58550-Q_SER.pdf
BZX58550-C62-QX
Hersteller: Nexperia USA Inc.
Description: BZX58550-C62-Q/SOD523/SC-79
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BCV28,115 BCV28_48.pdf
BCV28,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP DARL 30V 0.5A SOT89
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6286 Stücke - Preis und Lieferfrist anzeigen
74AUP2G02GD,125 74AUP2G02.pdf
74AUP2G02GD,125
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 2CH 2-INP 8XSON
Current - Output High, Low: 4mA, 4mA
Current - Quiescent (Max): 500 nA
Number of Circuits: 2
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Logic Level - Low: 0.7V ~ 0.9V
Logic Level - High: 1.6V ~ 2V
Supplier Device Package: 8-XSON (2x3)
Number of Inputs: 2
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: 8-XFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74HCT138PW,112 74HC_HCT138.pdf
74HCT138PW,112
Hersteller: Nexperia USA Inc.
Description: IC DECODER/DEMUX 1X3:8 16TSSOP
Type: Decoder/Demultiplexer
Circuit: 1 x 3:8
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 4mA, 4mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
auf Bestellung 72000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15679 Stücke - Preis und Lieferfrist anzeigen
2177+ 0.33 EUR
74HCT04DB,112 74HC_HCT04.pdf
74HCT04DB,112
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 6CH 6-INP 14SSOP
Logic Level - High: 2V
Supplier Device Package: 14-SSOP
Number of Inputs: 1
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 19ns @ 4.5V, 50pF
Logic Level - Low: 0.8V
auf Bestellung 67704 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4654 Stücke - Preis und Lieferfrist anzeigen
1986+ 0.37 EUR
74HCT688DB,118 74HC(T)688_Rev_Feb2017.pdf
Hersteller: Nexperia USA Inc.
Description: IDENTITY COMPARATOR, HCT SERIES,
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 2057 Stücke
Lieferzeit 21-28 Tag (e)
848+ 0.85 EUR
MMBZ6V8AL,215 NEXP-S-A0002912337-1.pdf?t.download=true&u=5oefqw
MMBZ6V8AL,215
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 4.5VWM 9.6VC TO236AB
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 24W
Voltage - Clamping (Max) @ Ipp: 9.6V
Voltage - Breakdown (Min): 6.46V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 4.5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A
Capacitance @ Frequency: 150pF @ 1MHz
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
auf Bestellung 51000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
11224+ 0.065 EUR
PZT2907A,115 PZT2907A.pdf
PZT2907A,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 0.6A SOT223
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Power - Max: 1.15 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SOT-223
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
auf Bestellung 100000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4522 Stücke - Preis und Lieferfrist anzeigen
4752+ 0.15 EUR
74LVC1G08GF/S500,1 PHGLS25110-1.pdf?t.download=true&u=5oefqw
74LVC1G08GF/S500,1
Hersteller: Nexperia USA Inc.
Description: 74LVC1G08GF - SINGLE 2-INPUT AND
Part Status: Active
Packaging: Bulk
auf Bestellung 245000 Stücke
Lieferzeit 21-28 Tag (e)
780+ 0.92 EUR
74LVC1G08GN,132 PHGLS25110-1.pdf?t.download=true&u=5oefqw
74LVC1G08GN,132
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74LVC1G08GN - AND GATE,
Part Status: Active
Packaging: Bulk
auf Bestellung 145000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 283478 Stücke - Preis und Lieferfrist anzeigen
3267+ 0.22 EUR
74LVC1G08GM,115 74LVC1G08.pdf
74LVC1G08GM,115
Hersteller: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 4 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS21QA BAS21QA.pdf
Hersteller: Nexperia USA Inc.
Description: BAS21 - RECTIFIER DIODE, 2 ELEME
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PESD3USB30Z PESDxUSB30.pdf
PESD3USB30Z
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 15WLCSP
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 6
Supplier Device Package: 15-WLCSP (2.37x1.17)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Applications: HDMI
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 15-UFBGA, WLCSP
Packaging: Bulk
auf Bestellung 17350 Stücke
Lieferzeit 21-28 Tag (e)
1159+ 0.64 EUR
PESD1USB30Z PESDxUSB30.pdf
PESD1USB30Z
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 5WLCSP
Packaging: Bulk
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
auf Bestellung 87555 Stücke
Lieferzeit 21-28 Tag (e)
3479+ 0.21 EUR
PESD2USB3S/CZ
PESD2USB3S/CZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE UNIDIRECT 2-CH 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PESD1USB3S/CZ
PESD1USB3S/CZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE UNIDIRECT 1-CH 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZB84-C56,215 BZB84_SER.pdf
BZB84-C56,215
Hersteller: Nexperia USA Inc.
Description: BZB84 SERIES - DUAL ZENER DIODES
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 200 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 51000 Stücke
Lieferzeit 21-28 Tag (e)
15000+ 0.049 EUR
BZB84-C11,215 BZB84_SER.pdf
BZB84-C11,215
Hersteller: Nexperia USA Inc.
Description: BZB84 SERIES - DUAL ZENER DIODES
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 318000 Stücke
Lieferzeit 21-28 Tag (e)
15000+ 0.049 EUR
BZB84-B3V0,215 BZB84_SER.pdf
BZB84-B3V0,215
Hersteller: Nexperia USA Inc.
Description: BZB84 SERIES - DUAL ZENER DIODES
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZB84-C2V4,215 BZB84_SER.pdf
BZB84-C2V4,215
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BZB84-C2V4 - ZENER DIOD
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
auf Bestellung 17367 Stücke
Lieferzeit 21-28 Tag (e)
17367+ 0.05 EUR
BZB84-C16,215 PHGLS18928-1.pdf?t.download=true&u=5oefqw
BZB84-C16,215
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BZB84-C16 - ZENER DIODE
Part Status: Active
Power - Max: 300 mW
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
auf Bestellung 54000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 27000 Stücke - Preis und Lieferfrist anzeigen
15000+ 0.049 EUR
BZB84-C20,215 PHGLS18928-1.pdf?t.download=true&u=5oefqw
BZB84-C20,215
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BZB84-C20 - ZENER DIODE
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
auf Bestellung 27000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 29870 Stücke - Preis und Lieferfrist anzeigen
15000+ 0.049 EUR
74HC1G02GV,125 74HC_HCT1G02.pdf
74HC1G02GV,125
Hersteller: Nexperia USA Inc.
Description: IC GATE NOR 1CH 2-INP SC74A
Part Status: Active
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Logic Level - Low: 0.5V ~ 1.8V
Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SC-74A
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Bulk
Current - Quiescent (Max): 20 µA
Number of Circuits: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BC56-16PASX NEXP-S-A0002912161-1.pdf?t.download=true&u=5oefqw
BC56-16PASX
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 1A DFN2020D-3
Part Status: Active
Supplier Device Package: DFN2020D-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 420 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143ZQCZ PDTA143X_TO_124XQC_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143ZQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143XQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143XQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.11 EUR
PDTA143XQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143XQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
38+ 0.7 EUR
46+ 0.57 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
PDTA143EQB-QZ PDTA143_114_124_144EQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143EQB-Q/SOT8015/DFN1110D-
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.099 EUR
PDTA143EQB-QZ PDTA143_114_124_144EQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143EQB-Q/SOT8015/DFN1110D-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
49+ 0.53 EUR
100+ 0.28 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTA143ZQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143ZQC-Q/SOT8009/DFN1412D-
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power - Max: 360 mW
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143EQC-QZ PDTA143_114_124_144EQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143EQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.11 EUR
PDTA143EQC-QZ PDTA143_114_124_144EQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143EQC-Q/SOT8009/DFN1412D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
38+ 0.7 EUR
46+ 0.57 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
PDTA143XQCZ PDTA143X_TO_124XQC_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143XQC/SOT8009/DFN1412D-3
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143ZQB-QZ PDTA143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143ZQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143XQB-QZ PDTA143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143XQB-Q/SOT8015/DFN1110D-
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143EQCZ PDTA143_114_124_144EQC_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTA143EQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PDTA143EQAZ PDTA143_114_124_144EQA_SER.pdf
PDTA143EQAZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 3DFN
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
auf Bestellung 125000 Stücke
Lieferzeit 21-28 Tag (e)
11446+ 0.065 EUR
PDTA143ZMB,315 PDTA143ZMB.pdf
PDTA143ZMB,315
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 250MW 3DFN
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 70000 Stücke
Lieferzeit 21-28 Tag (e)
13479+ 0.055 EUR
PDTA143XQAZ PDTA143X_123J_134Z_114YQA_SER.pdf
PDTA143XQAZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 3DFN
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
auf Bestellung 130000 Stücke
Lieferzeit 21-28 Tag (e)
11446+ 0.065 EUR
PDTA143ZQAZ PDTA143X_123J_134Z_114YQA_SER.pdf
PDTA143ZQAZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 3DFN
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
auf Bestellung 125000 Stücke
Lieferzeit 21-28 Tag (e)
11446+ 0.065 EUR
PDTA143TMB,315 PHGLS24725-1.pdf?t.download=true&u=5oefqw
PDTA143TMB,315
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V DFN1006B-3
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
auf Bestellung 70000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 129900 Stücke - Preis und Lieferfrist anzeigen
13479+ 0.055 EUR
PDTC143ZQCZ PDTC143X_TO_124XQC_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQC/SOT8009/DFN1412D-3
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.098 EUR
PDTC143ZQCZ PDTC143X_TO_124XQC_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
50+ 0.53 EUR
100+ 0.28 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143ZQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQB-Q/SOT8015/DFN1110D-
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Emitter Base (R2): 47 kOhms
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.099 EUR
PDTC143ZQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQB-Q/SOT8015/DFN1110D-
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
49+ 0.53 EUR
100+ 0.28 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143EQCZ PDTC143_114_124_144EQC_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143EQC/SOT8009/DFN1412D-3
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.098 EUR
PDTC143EQCZ PDTC143_114_124_144EQC_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143EQC/SOT8009/DFN1412D-3
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
50+ 0.53 EUR
100+ 0.28 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143XQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143XQC-Q/SOT8009/DFN1412D-
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.1 EUR
PDTC143XQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143XQC-Q/SOT8009/DFN1412D-
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
39+ 0.68 EUR
47+ 0.56 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
PDTC143XQCZ PDTC143X_TO_124XQC_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143XQC/SOT8009/DFN1412D-3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.098 EUR
PDTC143XQCZ PDTC143X_TO_124XQC_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143XQC/SOT8009/DFN1412D-3
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
50+ 0.53 EUR
100+ 0.28 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143XQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143XQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 10 kOhms
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.099 EUR
PDTC143XQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143XQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
49+ 0.53 EUR
100+ 0.28 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143ZQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQC-Q/SOT8009/DFN1412D-
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.1 EUR
PDTC143ZQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143ZQC-Q/SOT8009/DFN1412D-
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
39+ 0.68 EUR
47+ 0.56 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
PDTC143EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143EQC-Q/SOT8009/DFN1412D-
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.1 EUR
PDTC143EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143EQC-Q/SOT8009/DFN1412D-
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Frequency - Transition: 230 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
39+ 0.68 EUR
47+ 0.56 EUR
100+ 0.29 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.12 EUR
PDTC143EQB-QZ PDTC143_114_124_144EQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143EQB-Q/SOT8015/DFN1110D-
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
5000+ 0.099 EUR
PDTC143EQB-QZ PDTC143_114_124_144EQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: PDTC143EQB-Q/SOT8015/DFN1110D-
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
40+ 0.65 EUR
49+ 0.53 EUR
100+ 0.28 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
PDTC143XQAZ PDTC143X_123J_143Z_114YQA_SER.pdf
PDTC143XQAZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 3DFN
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 230 MHz
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
auf Bestellung 100000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
11446+ 0.065 EUR
PDTC143XM,315 PDTC143X_SER.pdf
PDTC143XM,315
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 250MW SOT883
Part Status: Active
Supplier Device Package: SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 80000 Stücke
Lieferzeit 21-28 Tag (e)
12596+ 0.058 EUR
BZT52-B51J BZT52-B_SER.pdf
BZT52-B51J
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 51V 590MW SOD123
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.96%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Part Status: Active
Power - Max: 590 mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40000 Stücke - Preis und Lieferfrist anzeigen
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