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BZX58550-C18X BZX58550-C18X Nexperia USA Inc. BZX58550_SER.pdf Description: BZX58550-C18/SOD523/SC-79
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PSMN030-150B,118 PSMN030-150B,118 Nexperia USA Inc. PSMN030-150B.pdf Description: MOSFET N-CH 150V 55.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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PESD5V0U1UT/ZLR Nexperia USA Inc. PESDXU1UT_SER.pdf Description: TVS DIODE 5VWM 21VC TO236AB
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 80W
Voltage - Clamping (Max) @ Ipp: 21V
Voltage - Breakdown (Min): 7V
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PUMH2/DG/B4X PUMH2/DG/B4X Nexperia USA Inc. PEMH2_PUMH2.pdf Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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PUMH1/DG/B4X PUMH1/DG/B4X Nexperia USA Inc. Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 50V
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PMP4201Y/DG/B3X PMP4201Y/DG/B3X Nexperia USA Inc. PMP4201V_G_Y.pdf Description: TRANS 2NPN 45V 100MA 6-TSSOP
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
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74AUP1T00GWH 74AUP1T00GWH Nexperia USA Inc. 74AUP1T00.pdf Description: IC GATE NAND 1CH 2-INP 5TSSOP
Current - Quiescent (Max): 1.2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.44V
Input Logic Level - High: 1.9V ~ 2.6V
Supplier Device Package: 5-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
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BZX84-C6V2/DG/B3:2 BZX84-C6V2/DG/B3:2 Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 6.2V 250MW TO236AB
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PMPB07R3VPX PMPB07R3VPX Nexperia USA Inc. PMPB07R3VP.pdf Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020M-6
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PMPB07R3VPX PMPB07R3VPX Nexperia USA Inc. PMPB07R3VP.pdf Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
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PMPB09R5VPX PMPB09R5VPX Nexperia USA Inc. PMPB09R5VP.pdf Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
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PMPB09R5VPX PMPB09R5VPX Nexperia USA Inc. PMPB09R5VP.pdf Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
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PMPB12R5EPX PMPB12R5EPX Nexperia USA Inc. PMPB12R5EP.pdf Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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PMPB12R5EPX PMPB12R5EPX Nexperia USA Inc. PMPB12R5EP.pdf Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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PMPB07R3ENX Nexperia USA Inc. Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
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PMPB07R3ENX Nexperia USA Inc. Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
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NXS0101GMX NXS0101GMX Nexperia USA Inc. NXS0101.pdf Description: IC XLTR VL BIDIR 6-XSON/SOT886
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 2.3 V ~ 5.5 V
Voltage - VCCA: 1.65 V ~ 3.6 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Data Rate: 24Mbps
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
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BUK7M9R9-60EX BUK7M9R9-60EX Nexperia USA Inc. BUK7M9R9-60E.pdf Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BUK7M9R9-60EX BUK7M9R9-60EX Nexperia USA Inc. BUK7M9R9-60E.pdf Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BUK7M22-80EX BUK7M22-80EX Nexperia USA Inc. BUK7M22-80E.pdf Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK7M22-80EX BUK7M22-80EX Nexperia USA Inc. BUK7M22-80E.pdf Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK7M67-60EX BUK7M67-60EX Nexperia USA Inc. BUK7M67-60E.pdf Description: MOSFET N-CH 60V 14A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
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BUK7M67-60EX BUK7M67-60EX Nexperia USA Inc. BUK7M67-60E.pdf Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
auf Bestellung 415 Stücke:
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14+1.55 EUR
22+0.95 EUR
100+0.62 EUR
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BZX884S-B22YL BZX884S-B22YL Nexperia USA Inc. BZX884S_SER.pdf Description: BZX884S-B22/SOD882BD/XSON2
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX884S-B22YL BZX884S-B22YL Nexperia USA Inc. BZX884S_SER.pdf Description: BZX884S-B22/SOD882BD/XSON2
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Produkt ist nicht verfügbar
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74HCT257PW,118 74HCT257PW,118 Nexperia USA Inc. 74HC_HCT257.pdf Description: IC MULTIPLEXER 4 X 2:1 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
auf Bestellung 13654 Stücke:
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74AHCT257D,112 74AHCT257D,112 Nexperia USA Inc. 74AHC_AHCT257.pdf Description: IC MULTIPLEXER 4 X 2:1 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Part Status: Obsolete
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74LVC126ABQ-Q100X 74LVC126ABQ-Q100X Nexperia USA Inc. 74LVC126A_Q100.pdf Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Part Status: Active
Supplier Device Package: 14-DHVQFN (2.5x3)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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74LVC126ABQ-Q100X 74LVC126ABQ-Q100X Nexperia USA Inc. 74LVC126A_Q100.pdf Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Part Status: Active
Supplier Device Package: 14-DHVQFN (2.5x3)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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74HCT241D,652 74HCT241D,652 Nexperia USA Inc. PHGLS06122-1.pdf?t.download=true&u=5oefqw Description: IC BUFFER NON-INVERT 5.5V 20-SO
Part Status: Active
Supplier Device Package: 20-SO
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
auf Bestellung 13954 Stücke:
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74HC241DB,118 74HC241DB,118 Nexperia USA Inc. 74HC_HCT241.pdf Description: IC BUFFER NON-INVERT 6V 20-SSOP
Part Status: Obsolete
Supplier Device Package: 20-SSOP
Current - Output High, Low: 7.8mA, 7.8mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
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74HCT240DB,118-NEX 74HCT240DB,118-NEX Nexperia USA Inc. Description: IC BUFFER INVERT 5.5V 20SSOP
Part Status: Active
Supplier Device Package: 20-SSOP
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
Logic Type: Buffer, Inverting
Number of Elements: 2
Produkt ist nicht verfügbar
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74HCT240PW118 74HCT240PW118 Nexperia USA Inc. 74HC_HCT240.pdf Description: IC BUFFER INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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74HCT240DB,118 74HCT240DB,118 Nexperia USA Inc. 74HC_HCT240.pdf Description: IC BUFFER INVERTING 5.5V 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
auf Bestellung 18000 Stücke:
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74HCT240BQ,115 74HCT240BQ,115 Nexperia USA Inc. 74HC_HCT240.pdf Description: IC BUFFER INVERT 5.5V 20-DHVQFN
Packaging: Bulk
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
auf Bestellung 2500 Stücke:
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490+1.09 EUR
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BUK9245-55A/C1118 BUK9245-55A/C1118 Nexperia USA Inc. BUK9245-55A.pdf Description: NEXPERIA BUK9245-55A - POWER FIE
Packaging: Bulk
Part Status: Active
auf Bestellung 12500 Stücke:
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BZX884S-B16-QYL BZX884S-B16-QYL Nexperia USA Inc. BZX884S-Q_SER.pdf Description: DIODE ZENER 16V 365MW DFN1006BD
Packaging: Tape & Reel (TR)
Tolerance: ±1.88%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
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BZX884S-B16-QYL BZX884S-B16-QYL Nexperia USA Inc. BZX884S-Q_SER.pdf Description: DIODE ZENER 16V 365MW DFN1006BD
Packaging: Cut Tape (CT)
Tolerance: ±1.88%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 11578 Stücke:
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46+0.46 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.088 EUR
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PDTC124XQB-QZ PDTC124XQB-QZ Nexperia USA Inc. PDTC143X_TO_124XQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
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5000+0.082 EUR
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PDTC124XQB-QZ PDTC124XQB-QZ Nexperia USA Inc. PDTC143X_TO_124XQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.48 EUR
73+0.29 EUR
117+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
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PDTC123JQC-QZ PDTC123JQC-QZ Nexperia USA Inc. PDTC143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PDTC123JQC-QZ PDTC123JQC-QZ Nexperia USA Inc. PDTC143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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500+0.12 EUR
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PDTC124XQC-QZ PDTC124XQC-QZ Nexperia USA Inc. PDTC143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
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PDTC124XQC-QZ PDTC124XQC-QZ Nexperia USA Inc. PDTC143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.48 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
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PDTC124EQC-QZ PDTC124EQC-QZ Nexperia USA Inc. PDTC143_114_124_144EQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PDTC124EQC-QZ PDTC124EQC-QZ Nexperia USA Inc. PDTC143_114_124_144EQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4870 Stücke:
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44+0.48 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
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PDTC124EQB-QZ PDTC124EQB-QZ Nexperia USA Inc. PDTC143_114_124_144EQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistors Included: R1 and R2
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PDTC124EQB-QZ PDTC124EQB-QZ Nexperia USA Inc. PDTC143_114_124_144EQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4997 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.48 EUR
73+0.29 EUR
117+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
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PDTC123JQB-QZ PDTC123JQB-QZ Nexperia USA Inc. PDTC143X_TO_124XQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
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Lieferzeit 10-14 Tag (e)
5000+0.076 EUR
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PDTC123JQB-QZ PDTC123JQB-QZ Nexperia USA Inc. PDTC143X_TO_124XQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
79+0.26 EUR
127+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.095 EUR
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PDTC114EQC-QZ PDTC114EQC-QZ Nexperia USA Inc. PDTC143_114_124_144EQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
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5000+0.086 EUR
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PDTC114EQC-QZ PDTC114EQC-QZ Nexperia USA Inc. PDTC143_114_124_144EQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
76+0.27 EUR
122+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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PDTC124XQCZ PDTC124XQCZ Nexperia USA Inc. PDTC143X_TO_124XQC_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
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5000+0.076 EUR
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PDTC123JQCZ PDTC123JQCZ Nexperia USA Inc. PDTC143X_TO_124XQC_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.081 EUR
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PZU2.7B2L,315 PZU2.7B2L,315 Nexperia USA Inc. PZUXBL_SER.pdf Description: DIODE ZENER 2.7V 250MW DFN1006-2
Qualification: AEC-Q100
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: DFN1006-2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±2%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZX38450-C7V5-QX BZX38450-C7V5-QX Nexperia USA Inc. BZX38450-Q_SER.pdf Description: DIODE ZENER 7.5V 300MW SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BZX38450-C7V5-QX BZX38450-C7V5-QX Nexperia USA Inc. BZX38450-Q_SER.pdf Description: DIODE ZENER 7.5V 300MW SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZX38450-C7V5X BZX38450-C7V5X Nexperia USA Inc. BZX38450_SER.pdf Description: DIODE ZENER 7.5V 300MW SOD323
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Produkt ist nicht verfügbar
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BZX38450-C7V5X BZX38450-C7V5X Nexperia USA Inc. BZX38450_SER.pdf Description: DIODE ZENER 7.5V 300MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 636 Stücke:
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48+0.44 EUR
78+0.27 EUR
110+0.19 EUR
127+0.17 EUR
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SZMM3Z7V5T1GX SZMM3Z7V5T1GX Nexperia USA Inc. SZMM3Z_SER.pdf Description: DIODE ZENER 7.5V 300MW SOD323
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.083 EUR
6000+0.075 EUR
9000+0.07 EUR
15000+0.065 EUR
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BZX58550-C18X BZX58550_SER.pdf
BZX58550-C18X
Hersteller: Nexperia USA Inc.
Description: BZX58550-C18/SOD523/SC-79
auf Bestellung 20421 Stücke:
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AnzahlPrivatkunde
28+0.75 EUR
35+0.61 EUR
100+0.32 EUR
500+0.21 EUR
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PSMN030-150B,118 PSMN030-150B.pdf
PSMN030-150B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 150V 55.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PESD5V0U1UT/ZLR PESDXU1UT_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 21VC TO236AB
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 80W
Voltage - Clamping (Max) @ Ipp: 21V
Voltage - Breakdown (Min): 7V
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PUMH2/DG/B4X PEMH2_PUMH2.pdf
PUMH2/DG/B4X
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PUMH1/DG/B4X
PUMH1/DG/B4X
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 50V
Produkt ist nicht verfügbar
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PMP4201Y/DG/B3X PMP4201V_G_Y.pdf
PMP4201Y/DG/B3X
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Produkt ist nicht verfügbar
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74AUP1T00GWH 74AUP1T00.pdf
74AUP1T00GWH
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 1CH 2-INP 5TSSOP
Current - Quiescent (Max): 1.2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.44V
Input Logic Level - High: 1.9V ~ 2.6V
Supplier Device Package: 5-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
auf Bestellung 7765 Stücke:
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23+0.94 EUR
26+0.81 EUR
28+0.76 EUR
100+0.61 EUR
250+0.56 EUR
500+0.48 EUR
1000+0.37 EUR
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BZX84-C6V2/DG/B3:2 PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C6V2/DG/B3:2
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 250MW TO236AB
Produkt ist nicht verfügbar
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PMPB07R3VPX PMPB07R3VP.pdf
PMPB07R3VPX
Hersteller: Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020M-6
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AnzahlPrivatkunde
3000+0.39 EUR
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PMPB07R3VPX PMPB07R3VP.pdf
PMPB07R3VPX
Hersteller: Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
auf Bestellung 4160 Stücke:
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AnzahlPrivatkunde
14+1.52 EUR
22+0.99 EUR
100+0.65 EUR
500+0.51 EUR
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PMPB09R5VPX PMPB09R5VP.pdf
PMPB09R5VPX
Hersteller: Nexperia USA Inc.
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.3 EUR
Mindestbestellmenge: 3000 Stücke
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PMPB09R5VPX PMPB09R5VP.pdf
PMPB09R5VPX
Hersteller: Nexperia USA Inc.
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
auf Bestellung 5626 Stücke:
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AnzahlPrivatkunde
19+1.13 EUR
28+0.76 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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PMPB12R5EPX PMPB12R5EP.pdf
PMPB12R5EPX
Hersteller: Nexperia USA Inc.
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMPB12R5EPX PMPB12R5EP.pdf
PMPB12R5EPX
Hersteller: Nexperia USA Inc.
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PMPB07R3ENX
Hersteller: Nexperia USA Inc.
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
Produkt ist nicht verfügbar
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PMPB07R3ENX
Hersteller: Nexperia USA Inc.
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
auf Bestellung 2815 Stücke:
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22+0.99 EUR
100+0.64 EUR
500+0.49 EUR
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NXS0101GMX NXS0101.pdf
NXS0101GMX
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 6-XSON/SOT886
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 2.3 V ~ 5.5 V
Voltage - VCCA: 1.65 V ~ 3.6 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Data Rate: 24Mbps
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 5743 Stücke:
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30+0.71 EUR
43+0.49 EUR
52+0.4 EUR
100+0.38 EUR
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BUK7M9R9-60EX BUK7M9R9-60E.pdf
BUK7M9R9-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4500 Stücke:
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1500+0.74 EUR
3000+0.68 EUR
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BUK7M9R9-60EX BUK7M9R9-60E.pdf
BUK7M9R9-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5558 Stücke:
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8+2.64 EUR
13+1.65 EUR
100+1.09 EUR
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BUK7M22-80EX BUK7M22-80E.pdf
BUK7M22-80EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
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1500+0.79 EUR
3000+0.73 EUR
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BUK7M22-80EX BUK7M22-80E.pdf
BUK7M22-80EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11257 Stücke:
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8+2.76 EUR
12+1.75 EUR
100+1.17 EUR
500+0.9 EUR
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BUK7M67-60EX BUK7M67-60E.pdf
BUK7M67-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 14A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK7M67-60EX BUK7M67-60E.pdf
BUK7M67-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
auf Bestellung 415 Stücke:
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14+1.55 EUR
22+0.95 EUR
100+0.62 EUR
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BZX884S-B22YL BZX884S_SER.pdf
BZX884S-B22YL
Hersteller: Nexperia USA Inc.
Description: BZX884S-B22/SOD882BD/XSON2
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX884S-B22YL BZX884S_SER.pdf
BZX884S-B22YL
Hersteller: Nexperia USA Inc.
Description: BZX884S-B22/SOD882BD/XSON2
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Produkt ist nicht verfügbar
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74HCT257PW,118 74HC_HCT257.pdf
74HCT257PW,118
Hersteller: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
auf Bestellung 13654 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
566+0.95 EUR
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74AHCT257D,112 74AHC_AHCT257.pdf
74AHCT257D,112
Hersteller: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Part Status: Obsolete
auf Bestellung 42878 Stücke:
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535+1 EUR
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74LVC126ABQ-Q100X 74LVC126A_Q100.pdf
74LVC126ABQ-Q100X
Hersteller: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Part Status: Active
Supplier Device Package: 14-DHVQFN (2.5x3)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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74LVC126ABQ-Q100X 74LVC126A_Q100.pdf
74LVC126ABQ-Q100X
Hersteller: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Part Status: Active
Supplier Device Package: 14-DHVQFN (2.5x3)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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74HCT241D,652 PHGLS06122-1.pdf?t.download=true&u=5oefqw
74HCT241D,652
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 20-SO
Part Status: Active
Supplier Device Package: 20-SO
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
auf Bestellung 13954 Stücke:
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AnzahlPrivatkunde
325+1.67 EUR
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74HC241DB,118 74HC_HCT241.pdf
74HC241DB,118
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V 20-SSOP
Part Status: Obsolete
Supplier Device Package: 20-SSOP
Current - Output High, Low: 7.8mA, 7.8mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
275+1.98 EUR
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74HCT240DB,118-NEX
74HCT240DB,118-NEX
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20SSOP
Part Status: Active
Supplier Device Package: 20-SSOP
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
Logic Type: Buffer, Inverting
Number of Elements: 2
Produkt ist nicht verfügbar
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74HCT240PW118 74HC_HCT240.pdf
74HCT240PW118
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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74HCT240DB,118 74HC_HCT240.pdf
74HCT240DB,118
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERTING 5.5V 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
auf Bestellung 18000 Stücke:
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AnzahlPrivatkunde
376+1.44 EUR
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74HCT240BQ,115 74HC_HCT240.pdf
74HCT240BQ,115
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20-DHVQFN
Packaging: Bulk
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
490+1.09 EUR
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BUK9245-55A/C1118 BUK9245-55A.pdf
BUK9245-55A/C1118
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BUK9245-55A - POWER FIE
Packaging: Bulk
Part Status: Active
auf Bestellung 12500 Stücke:
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AnzahlPrivatkunde
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BZX884S-B16-QYL BZX884S-Q_SER.pdf
BZX884S-B16-QYL
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 16V 365MW DFN1006BD
Packaging: Tape & Reel (TR)
Tolerance: ±1.88%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
10000+0.08 EUR
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BZX884S-B16-QYL BZX884S-Q_SER.pdf
BZX884S-B16-QYL
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 16V 365MW DFN1006BD
Packaging: Cut Tape (CT)
Tolerance: ±1.88%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 11578 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.088 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124XQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
PDTC124XQB-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.082 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124XQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
PDTC124XQB-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
73+0.29 EUR
117+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123JQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
PDTC123JQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123JQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
PDTC123JQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 4740 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
82+0.26 EUR
132+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.092 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124XQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
PDTC124XQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.084 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124XQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
PDTC124XQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf
PDTC124EQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf
PDTC124EQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
73+0.29 EUR
118+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124EQB-QZ PDTC143_114_124_144EQB-Q_SER.pdf
PDTC124EQB-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistors Included: R1 and R2
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124EQB-QZ PDTC143_114_124_144EQB-Q_SER.pdf
PDTC124EQB-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
73+0.29 EUR
117+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123JQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
PDTC123JQB-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.076 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123JQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
PDTC123JQB-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
79+0.26 EUR
127+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.095 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC114EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf
PDTC114EQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.086 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC114EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf
PDTC114EQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
76+0.27 EUR
122+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.099 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC124XQCZ PDTC143X_TO_124XQC_SER.pdf
PDTC124XQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.076 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PDTC123JQCZ PDTC143X_TO_124XQC_SER.pdf
PDTC123JQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.081 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PZU2.7B2L,315 PZUXBL_SER.pdf
PZU2.7B2L,315
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 250MW DFN1006-2
Qualification: AEC-Q100
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: DFN1006-2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±2%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX38450-C7V5-QX BZX38450-Q_SER.pdf
BZX38450-C7V5-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 300MW SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZX38450-C7V5-QX BZX38450-Q_SER.pdf
BZX38450-C7V5-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 300MW SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX38450-C7V5X BZX38450_SER.pdf
BZX38450-C7V5X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 300MW SOD323
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZX38450-C7V5X BZX38450_SER.pdf
BZX38450-C7V5X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 300MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
78+0.27 EUR
110+0.19 EUR
127+0.17 EUR
Mindestbestellmenge: 48 Stücke
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SZMM3Z7V5T1GX SZMM3Z_SER.pdf
SZMM3Z7V5T1GX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 300MW SOD323
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.083 EUR
6000+0.075 EUR
9000+0.07 EUR
15000+0.065 EUR
Mindestbestellmenge: 3000 Stücke
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