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PMV13XNEAR PMV13XNEAR Nexperia USA Inc. PMV13XNEA.pdf Description: PMV13XNEA - 20 V, N-CHANNEL TREN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7.3A, 8V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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PBSS4230PANP,115 PBSS4230PANP,115 Nexperia USA Inc. PBSS4230PANP.pdf Description: TRANS NPN/PNP 30V 2A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q100
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PBSS4230PANP,115 PBSS4230PANP,115 Nexperia USA Inc. PBSS4230PANP.pdf Description: TRANS NPN/PNP 30V 2A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q100
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74ALVC164245DL,112 74ALVC164245DL,112 Nexperia USA Inc. 74ALVC164245.pdf Description: IC XLTR VL BIDIR 48-SSOP
Number of Circuits: 2
Voltage - VCCB: 1.5 V ~ 5.5 V
Voltage - VCCA: 1.5 V ~ 3.6 V
Channels per Circuit: 8
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 48-SSOP
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
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MM3Z6V8T1GX MM3Z6V8T1GX Nexperia USA Inc. MM3Z_SER.pdf Description: DIODE ZENER 6.8V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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MM3Z6V8T1GX MM3Z6V8T1GX Nexperia USA Inc. MM3Z_SER.pdf Description: DIODE ZENER 6.8V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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MM3Z30VT1GX MM3Z30VT1GX Nexperia USA Inc. MM3Z_SER.pdf Description: VOLTAGE REGULATOR DIODES
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
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MM3Z30VT1GX MM3Z30VT1GX Nexperia USA Inc. MM3Z_SER.pdf Description: VOLTAGE REGULATOR DIODES
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
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MM3Z12VT1GX MM3Z12VT1GX Nexperia USA Inc. MM3Z_SER.pdf Description: DIODE ZENER 12V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
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MM3Z12VT1GX MM3Z12VT1GX Nexperia USA Inc. MM3Z_SER.pdf Description: DIODE ZENER 12V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
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MM3Z3V3T1GX MM3Z3V3T1GX Nexperia USA Inc. MM3Z_SER.pdf Description: DIODE ZENER 3.3V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MM3Z3V3T1GX MM3Z3V3T1GX Nexperia USA Inc. MM3Z_SER.pdf Description: DIODE ZENER 3.3V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MM3Z51VT1GX MM3Z51VT1GX Nexperia USA Inc. MM3Z_SER.pdf Description: VOLTAGE REGULATOR DIODES
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MM3Z51VT1GX MM3Z51VT1GX Nexperia USA Inc. MM3Z_SER.pdf Description: VOLTAGE REGULATOR DIODES
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
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BCV71-QR BCV71-QR Nexperia USA Inc. BCV71-Q.pdf Description: TRANS NPN 60V 0.1A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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PBHV9115X,115 PBHV9115X,115 Nexperia USA Inc. PBHV9115X.pdf Description: TRANS PNP 150V 1A SOT89
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 115MHz
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
Qualification: AEC-Q100
Grade: Automotive
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PMEG100V060ELPDAZ PMEG100V060ELPDAZ Nexperia USA Inc. PMEG100V060ELPD.pdf Description: DIODE SCHOTTKY 100V 6A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 6 A
Current - Reverse Leakage @ Vr: 450 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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PMPB15ENEX PMPB15ENEX Nexperia USA Inc. PMPB15ENE.pdf Description: SMALL SIGNAL MOSFET FOR MOBILE
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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PMPB15ENEX PMPB15ENEX Nexperia USA Inc. PMPB15ENE.pdf Description: SMALL SIGNAL MOSFET FOR MOBILE
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
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BSH205G2AR BSH205G2AR Nexperia USA Inc. BSH205G2A.pdf Description: MOSFET P-CH 20V 2.6A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 118mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 610mW (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 421 pF @ 10 V
Qualification: AEC-Q101
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BZX8450-C36R BZX8450-C36R Nexperia USA Inc. BZX8450_SER.pdf Description: BZX8450-C36/SOT23/TO-236AB
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BZX8450-C36R BZX8450-C36R Nexperia USA Inc. BZX8450_SER.pdf Description: BZX8450-C36/SOT23/TO-236AB
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BZX8450-C33-QR BZX8450-C33-QR Nexperia USA Inc. BZX8450-Q_SER.pdf Description: BZX8450-C33-Q/SOT23/TO-236AB
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BZX8450-C33-QR BZX8450-C33-QR Nexperia USA Inc. BZX8450-Q_SER.pdf Description: BZX8450-C33-Q/SOT23/TO-236AB
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BZX8450-C27R BZX8450-C27R Nexperia USA Inc. BZX8450_SER.pdf Description: DIODE ZENER 27V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 20.4 V
Produkt ist nicht verfügbar
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BZX38450-C30-QX BZX38450-C30-QX Nexperia USA Inc. BZX38450-Q_SER.pdf Description: BZX38450-C30-Q/SOD323/SOD2
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BZX38450-C30-QX BZX38450-C30-QX Nexperia USA Inc. BZX38450-Q_SER.pdf Description: BZX38450-C30-Q/SOD323/SOD2
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NZX3V3B,133 NZX3V3B,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 3.3V 500MW ALF2
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±3%
Packaging: Cut Tape (CT)
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NZX3V3B,133 NZX3V3B,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 3.3V 500MW ALF2
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±3%
Packaging: Tape & Box (TB)
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74LVC1G157GF,132 74LVC1G157GF,132 Nexperia USA Inc. 74LVC1G157.pdf Description: IC MULTIPLEXR 1X2:1 6XSON/SOT891
Part Status: Obsolete
Supplier Device Package: 6-XSON, SOT891 (1x1)
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 1 x 2:1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Bulk
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BUK96180-100A,118 BUK96180-100A,118 Nexperia USA Inc. BUK96180-100A.pdf Description: MOSFET N-CH 100V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Qualification: AEC-Q101
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BUK96180-100A,118 BUK96180-100A,118 Nexperia USA Inc. BUK96180-100A.pdf Description: MOSFET N-CH 100V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Qualification: AEC-Q101
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74AUP1G386GS,132 74AUP1G386GS,132 Nexperia USA Inc. PHGLS25188-1.pdf?t.download=true&u=5oefqw Description: IC GATE XOR
Packaging: Bulk
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PMEG4050EP-QX Nexperia USA Inc. Description: DIODE SCHOTTK 40V 5A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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BZV49-C8V2,115 BZV49-C8V2,115 Nexperia USA Inc. BZV49_SERIES.pdf Description: DIODE ZENER 8.2V 1W SOT89
Qualification: AEC-Q100
Grade: Automotive
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: SOT-89
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-243AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
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BZV49-C27115 BZV49-C27115 Nexperia USA Inc. BZV49_SERIES.pdf Description: NOW NEXPERIA BZV49-C24 - ZENER D
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PMEG3005AEA/ZLX PMEG3005AEA/ZLX Nexperia USA Inc. PMEG3005AEA.pdf Description: DIODE SCHOTTKY 30V 500MA SOD323
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 55pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PCMF3HDMI2BA-CZ PCMF3HDMI2BA-CZ Nexperia USA Inc. PCMFXHDMI2BA_C_SER.pdf Description: CMC 2LN SMD ESD
Part Status: Active
DC Resistance (DCR) (Max): 2.2Ohm (Typ)
Height (Max): 0.025" (0.64mm)
Operating Temperature: -40°C ~ 125°C
Number of Lines: 2
Mounting Type: Surface Mount
Size / Dimension: 0.093" L x 0.046" W (2.37mm x 1.17mm)
Filter Type: Signal Line
Package / Case: 15-UFBGA, WLCSP
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
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PCMF3HDMI2BA-CZ PCMF3HDMI2BA-CZ Nexperia USA Inc. PCMFXHDMI2BA_C_SER.pdf Description: CMC 2LN SMD ESD
Part Status: Active
DC Resistance (DCR) (Max): 2.2Ohm (Typ)
Height (Max): 0.025" (0.64mm)
Operating Temperature: -40°C ~ 125°C
Number of Lines: 2
Mounting Type: Surface Mount
Size / Dimension: 0.093" L x 0.046" W (2.37mm x 1.17mm)
Filter Type: Signal Line
Package / Case: 15-UFBGA, WLCSP
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
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MMBZ20VCL,215 MMBZ20VCL,215 Nexperia USA Inc. MMBZ20VCL.pdf Description: TVS DIODE 17VWM 28VC TO236AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 19V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 17V (Max)
Current - Peak Pulse (10/1000µs): 1.4A
Capacitance @ Frequency: 65pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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MMBZ20VCL,215 MMBZ20VCL,215 Nexperia USA Inc. MMBZ20VCL.pdf Description: TVS DIODE 17VWM 28VC TO236AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 19V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 17V (Max)
Current - Peak Pulse (10/1000µs): 1.4A
Capacitance @ Frequency: 65pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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74HC163D,653 74HC163D,653 Nexperia USA Inc. 74HC_HCT163.pdf Description: IC BINARY COUNTER 4-BIT 16SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SO
Part Status: Obsolete
Voltage - Supply: 2 V ~ 6 V
Count Rate: 55 MHz
Number of Bits per Element: 4
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PDTA124XQCZ PDTA124XQCZ Nexperia USA Inc. PDTA143X_TO_124XQC_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
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PDTA124XQCZ PDTA124XQCZ Nexperia USA Inc. PDTA143X_TO_124XQC_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
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PDTA124XQC-QZ PDTA124XQC-QZ Nexperia USA Inc. PDTA143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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PDTA124XQC-QZ PDTA124XQC-QZ Nexperia USA Inc. PDTA143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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BUK663R2-40C,118 BUK663R2-40C,118 Nexperia USA Inc. BUK663R2-40C.pdf Description: NEXPERIA BUK663R2-40C - 100A, 40
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
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BUK9M4R3-40HX BUK9M4R3-40HX Nexperia USA Inc. BUK9M4R3-40H.pdf Description: MOSFET N-CH 40V 95A LFPAK33
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +16V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 95A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BUK7M12-60EX BUK7M12-60EX Nexperia USA Inc. BUK7M12-60E.pdf Description: MOSFET N-CH 60V 53A LFPAK33
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
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BUK9M3R3-40HX BUK9M3R3-40HX Nexperia USA Inc. BUK9M3R3-40H.pdf Description: MOSFET N-CH 40V 80A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 3766 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BUK9M3R3-40HX BUK9M3R3-40HX Nexperia USA Inc. BUK9M3R3-40H.pdf Description: MOSFET N-CH 40V 80A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 3766 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BUK9M43-100EX BUK9M43-100EX Nexperia USA Inc. BUK9M43-100E.pdf Description: MOSFET N-CH 100V 25A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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1500+0.63 EUR
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BUK9M43-100EX BUK9M43-100EX Nexperia USA Inc. BUK9M43-100E.pdf Description: MOSFET N-CH 100V 25A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BUK9M15-40HX BUK9M15-40HX Nexperia USA Inc. BUK9M15-40H.pdf Description: MOSFET N-CH 40V 30A LFPAK33
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
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500+0.76 EUR
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PSMN6R4-30MLD,115 PSMN6R4-30MLD,115 Nexperia USA Inc. PSMN6R4-30MLD.pdf Description: POWER FIELD-EFFECT TRANSISTOR
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PSMN6R5-80BS118 PSMN6R5-80BS118 Nexperia USA Inc. PSMN6R5-80BS.pdf Description: NOW NEXPERIA PSMN6R5-80BS - POWE
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PIMP31X PIMP31X Nexperia USA Inc. PIMP31.pdf Description: TRANS PREBIAS 2PNP 50V 6TSOP
Supplier Device Package: 6-TSOP
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 290mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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PIMP31X PIMP31X Nexperia USA Inc. PIMP31.pdf Description: TRANS PREBIAS 2PNP 50V 6TSOP
Supplier Device Package: 6-TSOP
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 290mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
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PIMP32X PIMP32X Nexperia USA Inc. PIMP32.pdf Description: TRANS PREBIAS 2PNP 50V 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 290mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 140MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: 6-TSOP
Part Status: Active
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PIMP32X PIMP32X Nexperia USA Inc. PIMP32.pdf Description: TRANS PREBIAS 2PNP 50V 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 290mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 140MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: 6-TSOP
Part Status: Active
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PMV13XNEAR PMV13XNEA.pdf
PMV13XNEAR
Hersteller: Nexperia USA Inc.
Description: PMV13XNEA - 20 V, N-CHANNEL TREN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 931 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7.3A, 8V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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37+0.57 EUR
100+0.31 EUR
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PBSS4230PANP,115 PBSS4230PANP.pdf
PBSS4230PANP,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 30V 2A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PBSS4230PANP,115 PBSS4230PANP.pdf
PBSS4230PANP,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 30V 2A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 510mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q100
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74ALVC164245DL,112 74ALVC164245.pdf
74ALVC164245DL,112
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 48-SSOP
Number of Circuits: 2
Voltage - VCCB: 1.5 V ~ 5.5 V
Voltage - VCCA: 1.5 V ~ 3.6 V
Channels per Circuit: 8
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 48-SSOP
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
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MM3Z6V8T1GX MM3Z_SER.pdf
MM3Z6V8T1GX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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MM3Z6V8T1GX MM3Z_SER.pdf
MM3Z6V8T1GX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.8V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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MM3Z30VT1GX MM3Z_SER.pdf
MM3Z30VT1GX
Hersteller: Nexperia USA Inc.
Description: VOLTAGE REGULATOR DIODES
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
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MM3Z30VT1GX MM3Z_SER.pdf
MM3Z30VT1GX
Hersteller: Nexperia USA Inc.
Description: VOLTAGE REGULATOR DIODES
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
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84+0.25 EUR
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183+0.11 EUR
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MM3Z12VT1GX MM3Z_SER.pdf
MM3Z12VT1GX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
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MM3Z12VT1GX MM3Z_SER.pdf
MM3Z12VT1GX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
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164+0.13 EUR
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MM3Z3V3T1GX MM3Z_SER.pdf
MM3Z3V3T1GX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MM3Z3V3T1GX MM3Z_SER.pdf
MM3Z3V3T1GX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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MM3Z51VT1GX MM3Z_SER.pdf
MM3Z51VT1GX
Hersteller: Nexperia USA Inc.
Description: VOLTAGE REGULATOR DIODES
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MM3Z51VT1GX MM3Z_SER.pdf
MM3Z51VT1GX
Hersteller: Nexperia USA Inc.
Description: VOLTAGE REGULATOR DIODES
Current - Reverse Leakage @ Vr: 50 nA @ 35.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 180 Ohms
Voltage - Zener (Nom) (Vz): 51 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
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46+0.46 EUR
67+0.32 EUR
136+0.15 EUR
500+0.13 EUR
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BCV71-QR BCV71-Q.pdf
BCV71-QR
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 60V 0.1A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PBHV9115X,115 PBHV9115X.pdf
PBHV9115X,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 150V 1A SOT89
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 115MHz
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 10V
Qualification: AEC-Q100
Grade: Automotive
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15+1.46 EUR
23+0.92 EUR
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PMEG100V060ELPDAZ PMEG100V060ELPD.pdf
PMEG100V060ELPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 6A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 6 A
Current - Reverse Leakage @ Vr: 450 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10279 Stücke:
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12+1.87 EUR
19+1.17 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.52 EUR
2000+0.48 EUR
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PMPB15ENEX PMPB15ENE.pdf
PMPB15ENEX
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR MOBILE
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMPB15ENEX PMPB15ENE.pdf
PMPB15ENEX
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR MOBILE
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
auf Bestellung 2900 Stücke:
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15+1.46 EUR
24+0.9 EUR
50+0.67 EUR
100+0.58 EUR
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BSH205G2AR BSH205G2A.pdf
BSH205G2AR
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.6A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 118mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 610mW (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 421 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX8450-C36R BZX8450_SER.pdf
BZX8450-C36R
Hersteller: Nexperia USA Inc.
Description: BZX8450-C36/SOT23/TO-236AB
Produkt ist nicht verfügbar
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BZX8450-C36R BZX8450_SER.pdf
BZX8450-C36R
Hersteller: Nexperia USA Inc.
Description: BZX8450-C36/SOT23/TO-236AB
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46+0.46 EUR
56+0.38 EUR
106+0.2 EUR
500+0.13 EUR
1000+0.089 EUR
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BZX8450-C33-QR BZX8450-Q_SER.pdf
BZX8450-C33-QR
Hersteller: Nexperia USA Inc.
Description: BZX8450-C33-Q/SOT23/TO-236AB
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3000+0.082 EUR
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BZX8450-C33-QR BZX8450-Q_SER.pdf
BZX8450-C33-QR
Hersteller: Nexperia USA Inc.
Description: BZX8450-C33-Q/SOT23/TO-236AB
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AnzahlPrivatkunde
46+0.46 EUR
55+0.38 EUR
103+0.2 EUR
500+0.13 EUR
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BZX8450-C27R BZX8450_SER.pdf
BZX8450-C27R
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 20.4 V
Produkt ist nicht verfügbar
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BZX38450-C30-QX BZX38450-Q_SER.pdf
BZX38450-C30-QX
Hersteller: Nexperia USA Inc.
Description: BZX38450-C30-Q/SOD323/SOD2
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.089 EUR
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BZX38450-C30-QX BZX38450-Q_SER.pdf
BZX38450-C30-QX
Hersteller: Nexperia USA Inc.
Description: BZX38450-C30-Q/SOD323/SOD2
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42+0.5 EUR
51+0.42 EUR
100+0.23 EUR
500+0.14 EUR
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NZX3V3B,133 NZX_SER.pdf
NZX3V3B,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 500MW ALF2
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 8126 Stücke:
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50+0.42 EUR
83+0.25 EUR
117+0.18 EUR
134+0.15 EUR
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NZX3V3B,133 NZX_SER.pdf
NZX3V3B,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 500MW ALF2
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±3%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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74LVC1G157GF,132 74LVC1G157.pdf
74LVC1G157GF,132
Hersteller: Nexperia USA Inc.
Description: IC MULTIPLEXR 1X2:1 6XSON/SOT891
Part Status: Obsolete
Supplier Device Package: 6-XSON, SOT891 (1x1)
Voltage Supply Source: Single Supply
Current - Output High, Low: 32mA, 32mA
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: Multiplexer
Circuit: 1 x 2:1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Bulk
auf Bestellung 106577 Stücke:
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AnzahlPrivatkunde
2567+0.21 EUR
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BUK96180-100A,118 BUK96180-100A.pdf
BUK96180-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK96180-100A,118 BUK96180-100A.pdf
BUK96180-100A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
Qualification: AEC-Q101
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74AUP1G386GS,132 PHGLS25188-1.pdf?t.download=true&u=5oefqw
74AUP1G386GS,132
Hersteller: Nexperia USA Inc.
Description: IC GATE XOR
Packaging: Bulk
auf Bestellung 105000 Stücke:
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AnzahlPrivatkunde
1138+0.5 EUR
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PMEG4050EP-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 40V 5A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZV49-C8V2,115 BZV49_SERIES.pdf
BZV49-C8V2,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 8.2V 1W SOT89
Qualification: AEC-Q100
Grade: Automotive
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: SOT-89
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-243AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 1084 Stücke:
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17+1.3 EUR
23+0.92 EUR
100+0.63 EUR
500+0.51 EUR
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BZV49-C27115 BZV49_SERIES.pdf
BZV49-C27115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA BZV49-C24 - ZENER D
Produkt ist nicht verfügbar
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PMEG3005AEA/ZLX PMEG3005AEA.pdf
PMEG3005AEA/ZLX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 500MA SOD323
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 55pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PCMF3HDMI2BA-CZ PCMFXHDMI2BA_C_SER.pdf
PCMF3HDMI2BA-CZ
Hersteller: Nexperia USA Inc.
Description: CMC 2LN SMD ESD
Part Status: Active
DC Resistance (DCR) (Max): 2.2Ohm (Typ)
Height (Max): 0.025" (0.64mm)
Operating Temperature: -40°C ~ 125°C
Number of Lines: 2
Mounting Type: Surface Mount
Size / Dimension: 0.093" L x 0.046" W (2.37mm x 1.17mm)
Filter Type: Signal Line
Package / Case: 15-UFBGA, WLCSP
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PCMF3HDMI2BA-CZ PCMFXHDMI2BA_C_SER.pdf
PCMF3HDMI2BA-CZ
Hersteller: Nexperia USA Inc.
Description: CMC 2LN SMD ESD
Part Status: Active
DC Resistance (DCR) (Max): 2.2Ohm (Typ)
Height (Max): 0.025" (0.64mm)
Operating Temperature: -40°C ~ 125°C
Number of Lines: 2
Mounting Type: Surface Mount
Size / Dimension: 0.093" L x 0.046" W (2.37mm x 1.17mm)
Filter Type: Signal Line
Package / Case: 15-UFBGA, WLCSP
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
auf Bestellung 3510 Stücke:
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9+2.43 EUR
10+2.17 EUR
25+2.06 EUR
100+1.69 EUR
250+1.58 EUR
500+1.39 EUR
1000+1.09 EUR
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MMBZ20VCL,215 MMBZ20VCL.pdf
MMBZ20VCL,215
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 17VWM 28VC TO236AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 19V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 17V (Max)
Current - Peak Pulse (10/1000µs): 1.4A
Capacitance @ Frequency: 65pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.067 EUR
6000+0.064 EUR
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MMBZ20VCL,215 MMBZ20VCL.pdf
MMBZ20VCL,215
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 17VWM 28VC TO236AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 40W
Voltage - Clamping (Max) @ Ipp: 28V
Voltage - Breakdown (Min): 19V
Bidirectional Channels: 1
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 17V (Max)
Current - Peak Pulse (10/1000µs): 1.4A
Capacitance @ Frequency: 65pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6676 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
56+0.38 EUR
144+0.14 EUR
500+0.13 EUR
1000+0.11 EUR
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74HC163D,653 74HC_HCT163.pdf
74HC163D,653
Hersteller: Nexperia USA Inc.
Description: IC BINARY COUNTER 4-BIT 16SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SO
Part Status: Obsolete
Voltage - Supply: 2 V ~ 6 V
Count Rate: 55 MHz
Number of Bits per Element: 4
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AnzahlPrivatkunde
915+0.58 EUR
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PDTA124XQCZ PDTA143X_TO_124XQC_SER.pdf
PDTA124XQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
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AnzahlPrivatkunde
5000+0.076 EUR
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PDTA124XQCZ PDTA143X_TO_124XQC_SER.pdf
PDTA124XQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
84+0.25 EUR
135+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
2000+0.089 EUR
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PDTA124XQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf
PDTA124XQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.08 EUR
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PDTA124XQC-QZ PDTA143X_TO_124XQC-Q_SER.pdf
PDTA124XQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
81+0.26 EUR
130+0.17 EUR
500+0.12 EUR
1000+0.1 EUR
2000+0.093 EUR
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BUK663R2-40C,118 BUK663R2-40C.pdf
BUK663R2-40C,118
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BUK663R2-40C - 100A, 40
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 14413 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
601+1.05 EUR
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BUK9M4R3-40HX BUK9M4R3-40H.pdf
BUK9M4R3-40HX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 95A LFPAK33
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +16V, -10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 95A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1441 Stücke:
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5+4.58 EUR
10+2.94 EUR
50+2.23 EUR
100+2 EUR
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BUK7M12-60EX BUK7M12-60E.pdf
BUK7M12-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 53A LFPAK33
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
auf Bestellung 2807 Stücke:
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8+2.95 EUR
12+1.87 EUR
100+1.24 EUR
500+0.98 EUR
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BUK9M3R3-40HX BUK9M3R3-40H.pdf
BUK9M3R3-40HX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 80A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 3766 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.25 EUR
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BUK9M3R3-40HX BUK9M3R3-40H.pdf
BUK9M3R3-40HX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 80A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 3766 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1699 Stücke:
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10+2.31 EUR
14+1.61 EUR
100+1.4 EUR
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BUK9M43-100EX BUK9M43-100E.pdf
BUK9M43-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 25A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
1500+0.63 EUR
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BUK9M43-100EX BUK9M43-100E.pdf
BUK9M43-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 25A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4126 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.07 EUR
15+1.48 EUR
100+1 EUR
500+0.8 EUR
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BUK9M15-40HX BUK9M15-40H.pdf
BUK9M15-40HX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 30A LFPAK33
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
auf Bestellung 2126 Stücke:
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AnzahlPrivatkunde
9+2.37 EUR
15+1.49 EUR
100+0.98 EUR
500+0.76 EUR
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PSMN6R4-30MLD,115 PSMN6R4-30MLD.pdf
PSMN6R4-30MLD,115
Hersteller: Nexperia USA Inc.
Description: POWER FIELD-EFFECT TRANSISTOR
Produkt ist nicht verfügbar
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PSMN6R5-80BS118 PSMN6R5-80BS.pdf
PSMN6R5-80BS118
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA PSMN6R5-80BS - POWE
Produkt ist nicht verfügbar
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PIMP31X PIMP31.pdf
PIMP31X
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V 6TSOP
Supplier Device Package: 6-TSOP
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 290mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
6000+0.2 EUR
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PIMP31X PIMP31.pdf
PIMP31X
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V 6TSOP
Supplier Device Package: 6-TSOP
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 290mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 8900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
35+0.61 EUR
100+0.37 EUR
500+0.33 EUR
1000+0.23 EUR
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PIMP32X PIMP32.pdf
PIMP32X
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 290mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 140MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
6000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
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PIMP32X PIMP32.pdf
PIMP32X
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 290mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 140MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
35+0.61 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
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