Produkte > NEXPERIA USA INC. > Alle Produkte des Herstellers NEXPERIA USA INC. (30653) > Seite 267 nach 511
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PMEG120G10ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 1A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 36pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PMEG120G10ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 1A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 36pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
auf Bestellung 2084 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG100T30ELPX | Nexperia USA Inc. |
Description: DIODE SCHOTT 100V 3A SOD128/CFP5Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12.5 ns Technology: Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG150G20ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 2A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PMEG150G20ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 2A SOD128/CFP5 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V Qualification: AEC-Q101 |
auf Bestellung 2857 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG120G30ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 3A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 103pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PMEG120G30ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 3A SOD128/CFP5 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 103pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
auf Bestellung 768 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG100T10ELXDX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 1A SOD323HPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Schottky Capacitance @ Vr, F: 95pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD323HP Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 100 V |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG100T10ELXDX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 1A SOD323HPPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Schottky Capacitance @ Vr, F: 95pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD323HP Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 100 V |
auf Bestellung 5986 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG150G10ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 1A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 34pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PMEG150G10ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 1A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 34pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V Qualification: AEC-Q101 |
auf Bestellung 1005 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG120G20ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 2A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 75pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PMEG120G20ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 2A SOD128/CFP5 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 75pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX84-C3V6/DG/B4R | Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 250MW TO236AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX84-C3V6/DG/B3:2 | Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 250MW TO236AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX84-C3V6/DG/B3,2 | Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 250MW TO236AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX84-C3V6/DG/B4VL | Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 250MW TO236AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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74HC4852BQ-Q100115 | Nexperia USA Inc. |
Description: NEXPERIA 74HC4852BQ-Q100 - SINGL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PMEG6020ETR-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.5 ns Technology: Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG6020AELP-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9 ns Technology: Schottky Capacitance @ Vr, F: 220pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A Current - Reverse Leakage @ Vr: 700 nA @ 60 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PMEG6020ETP-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.6 ns Technology: Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG6020ELR-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.5 ns Technology: Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A Current - Reverse Leakage @ Vr: 300 nA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG6020AELR-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9 ns Technology: Schottky Capacitance @ Vr, F: 220pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A Current - Reverse Leakage @ Vr: 700 nA @ 60 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PMEG6020ER-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PMEG6020EP-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PDTC124EQAZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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PZU9.1B1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 310MW SOD323F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PZU9.1B1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 310MW SOD323F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PZU9.1B1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 310MW SOD323F |
auf Bestellung 141000 Stücke: Lieferzeit 10-14 Tag (e) |
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74CBTLV3126BQ115 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74CBTLV3126BQ - BUS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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74CBTLV3126PW-Q100118 | Nexperia USA Inc. |
Description: BUS DRIVER, CBT SERIES |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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74HC2GU04GW | Nexperia USA Inc. |
Description: IC INVERTER 2CH 2-INP 6TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PMPB16R5XNEX | Nexperia USA Inc. |
Description: PMPB16R5XNE - 30 V, N-CHANNEL TRPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
auf Bestellung 5461 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB16R5XNEX | Nexperia USA Inc. |
Description: PMPB16R5XNE - 30 V, N-CHANNEL TRPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
auf Bestellung 7712 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB12R7EPX | Nexperia USA Inc. |
Description: PMPB12R7EP - 30 V, P-CHANNEL TREPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V |
Produkt ist nicht verfügbar |
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PMPB12R7EPX | Nexperia USA Inc. |
Description: PMPB12R7EP - 30 V, P-CHANNEL TREPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V |
auf Bestellung 3778 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX884S-C4V7-QYL | Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR IN DFN PACK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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74LV4051PW | Nexperia USA Inc. |
Description: SINGLE-ENDED MULTIPLEXER, 1 FUNC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BUK9MHH-65PNN,518 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 65V 15A 20SO Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W (Tc) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: 20-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX84J-C27,135 | Nexperia USA Inc. |
Description: DIODE ZENER 27V 550MW SOD323FTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 550 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BZX84J-C27,135 | Nexperia USA Inc. |
Description: DIODE ZENER 27V 550MW SOD323FTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 550 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PZU2.7B2,115 | Nexperia USA Inc. |
Description: DIODE ZENER 2.7V 310MW SOD323FTolerance: ±2% Packaging: Bulk Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-323F Grade: Automotive Part Status: Active Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V Qualification: AEC-Q100 |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC2G240GF,115 | Nexperia USA Inc. |
Description: IC BUFFER INVERT 5.5V 8XSONPackaging: Bulk Package / Case: 8-XFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 8-XSON (1.35x1) Part Status: Last Time Buy |
auf Bestellung 112920 Stücke: Lieferzeit 10-14 Tag (e) |
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PZU4.3B1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 4.3V 310MW SOD323FTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323F Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PZU4.3B1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 4.3V 310MW SOD323FTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323F Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NZX5V6A,133 | Nexperia USA Inc. |
Description: DIODE ZENER 5.35V 500MW ALF2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.35 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: ALF2 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
auf Bestellung 4244 Stücke: Lieferzeit 10-14 Tag (e) |
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PMN230ENEX | Nexperia USA Inc. |
Description: PMN230ENE - 60 V, N-CHANNEL TREN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| PMN40UPE,115-NEX | Nexperia USA Inc. | Description: TRANSISTOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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74ALVT16823DGGS | Nexperia USA Inc. |
Description: IC FF D-TYPE DUAL 9BIT 56TSSOPPackaging: Tube Package / Case: 56-TFSOP (0.240", 6.10mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 2 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V Current - Quiescent (Iq): 100 µA Current - Output High, Low: 8mA, 24mA; 32mA, 64mA Trigger Type: Positive Edge Clock Frequency: 250 MHz Input Capacitance: 3 pF Supplier Device Package: 56-TSSOP Max Propagation Delay @ V, Max CL: 3.1ns @ 3.3V, 50pF Number of Bits per Element: 9 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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74ALVT16821DGGS | Nexperia USA Inc. |
Description: IC FF D-TYPE DUAL 10BIT 56TSSOPPackaging: Tube Package / Case: 56-TFSOP (0.240", 6.10mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 2 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V Current - Quiescent (Iq): 70 µA Current - Output High, Low: 8mA, 24mA; 32mA, 64mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 3 pF Supplier Device Package: 56-TSSOP Max Propagation Delay @ V, Max CL: 3.2ns @ 3.3V, 50pF Number of Bits per Element: 10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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74LVC2G34GF | Nexperia USA Inc. |
Description: DUAL BUFFER GATEPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| 74LVC2G34GW | Nexperia USA Inc. |
Description: BUFFER, LVC/LCX/Z SERIES, 2-FUNC Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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74LVC1G58GF,132 | Nexperia USA Inc. |
Description: IC MF CFG 1-CIR 3-IN 6XSONPackaging: Bulk Package / Case: 6-XFDFN Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: Configurable Multiple Function Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Schmitt Trigger Input: Yes Supplier Device Package: 6-XSON, SOT891 (1x1) Number of Circuits: 1 |
auf Bestellung 72660 Stücke: Lieferzeit 10-14 Tag (e) |
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PESD2USB3B/CZ | Nexperia USA Inc. |
Description: TVS DIODE 4VWM 10WLCSPPackaging: Tape & Reel (TR) Package / Case: 10-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.29pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.5A (8/20µs) Voltage - Reverse Standoff (Typ): 4V (Max) Supplier Device Package: 10-WLCSP (1.57x1.17) Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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PESD1USB3B/CZ | Nexperia USA Inc. | Description: TVS DIODE 10WLCSP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| PESD3USB3B/CZ | Nexperia USA Inc. | Description: TVS DIODE 4VWM 3.7VC DSN0603-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SZMM3Z4V3T1GX | Nexperia USA Inc. |
Description: SZMM3Z4V3T1G/SOD323/SOD2Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZMM3Z4V3T1GX | Nexperia USA Inc. |
Description: SZMM3Z4V3T1G/SOD323/SOD2Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 11870 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y22-60ELX | Nexperia USA Inc. |
Description: SINGLE N-CHANNEL 60 V, 15 MOHM LPackaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9Y22-60ELX | Nexperia USA Inc. |
Description: SINGLE N-CHANNEL 60 V, 15 MOHM LPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMEG120G10ELR-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 120V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG120G10ELR-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 120V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 2084 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 31+ | 0.58 EUR |
| 50+ | 0.42 EUR |
| 100+ | 0.37 EUR |
| PMEG100T30ELPX |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTT 100V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.5 ns
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
Description: DIODE SCHOTT 100V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.5 ns
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.34 EUR |
| 6000+ | 0.33 EUR |
| PMEG150G20ELP-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG150G20ELP-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
auf Bestellung 2857 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 23+ | 0.79 EUR |
| 50+ | 0.58 EUR |
| 100+ | 0.51 EUR |
| PMEG120G30ELP-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG120G30ELP-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 768 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.34 EUR |
| PMEG100T10ELXDX |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4500+ | 0.097 EUR |
| PMEG100T10ELXDX |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
auf Bestellung 5986 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 46+ | 0.39 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.12 EUR |
| PMEG150G10ELR-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG150G10ELR-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
auf Bestellung 1005 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 38+ | 0.48 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| PMEG120G20ELP-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 120V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG120G20ELP-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 120V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84-C3V6/DG/B4R |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84-C3V6/DG/B3:2 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84-C3V6/DG/B3,2 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84-C3V6/DG/B4VL |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HC4852BQ-Q100115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74HC4852BQ-Q100 - SINGL
Description: NEXPERIA 74HC4852BQ-Q100 - SINGL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG6020ETR-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| PMEG6020AELP-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG6020ETP-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.6 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.6 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
| PMEG6020ELR-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| PMEG6020AELR-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG6020ER-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG6020EP-QX |
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PDTC124EQAZ |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9489+ | 0.049 EUR |
| PZU9.1B1,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 310MW SOD323F
Description: DIODE ZENER 9.1V 310MW SOD323F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PZU9.1B1,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 310MW SOD323F
Description: DIODE ZENER 9.1V 310MW SOD323F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PZU9.1B1,115 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 310MW SOD323F
Description: DIODE ZENER 9.1V 310MW SOD323F
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9584+ | 0.052 EUR |
| 74CBTLV3126BQ115 |
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Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74CBTLV3126BQ - BUS
Description: NOW NEXPERIA 74CBTLV3126BQ - BUS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74CBTLV3126PW-Q100118 |
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Hersteller: Nexperia USA Inc.
Description: BUS DRIVER, CBT SERIES
Description: BUS DRIVER, CBT SERIES
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HC2GU04GW |
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Hersteller: Nexperia USA Inc.
Description: IC INVERTER 2CH 2-INP 6TSSOP
Description: IC INVERTER 2CH 2-INP 6TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMPB16R5XNEX |
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Hersteller: Nexperia USA Inc.
Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 5461 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| PMPB16R5XNEX |
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Hersteller: Nexperia USA Inc.
Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 7712 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |
| PMPB12R7EPX |
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Hersteller: Nexperia USA Inc.
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMPB12R7EPX |
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Hersteller: Nexperia USA Inc.
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
auf Bestellung 3778 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.23 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| BZX884S-C4V7-QYL |
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Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LV4051PW |
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Hersteller: Nexperia USA Inc.
Description: SINGLE-ENDED MULTIPLEXER, 1 FUNC
Description: SINGLE-ENDED MULTIPLEXER, 1 FUNC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9MHH-65PNN,518 |
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 65V 15A 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 20-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 65V 15A 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 20-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84J-C27,135 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 550MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Description: DIODE ZENER 27V 550MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84J-C27,135 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 550MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Description: DIODE ZENER 27V 550MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PZU2.7B2,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 310MW SOD323F
Tolerance: ±2%
Packaging: Bulk
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q100
Description: DIODE ZENER 2.7V 310MW SOD323F
Tolerance: ±2%
Packaging: Bulk
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q100
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3785+ | 0.12 EUR |
| 74LVC2G240GF,115 |
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Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 8XSON
Packaging: Bulk
Package / Case: 8-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-XSON (1.35x1)
Part Status: Last Time Buy
Description: IC BUFFER INVERT 5.5V 8XSON
Packaging: Bulk
Package / Case: 8-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-XSON (1.35x1)
Part Status: Last Time Buy
auf Bestellung 112920 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1612+ | 0.32 EUR |
| PZU4.3B1,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.3V 310MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Description: DIODE ZENER 4.3V 310MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PZU4.3B1,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.3V 310MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Description: DIODE ZENER 4.3V 310MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NZX5V6A,133 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.35V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.35 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.35V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.35 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 4244 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 104+ | 0.17 EUR |
| 168+ | 0.11 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.067 EUR |
| 2000+ | 0.059 EUR |
| PMN230ENEX |
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Hersteller: Nexperia USA Inc.
Description: PMN230ENE - 60 V, N-CHANNEL TREN
Description: PMN230ENE - 60 V, N-CHANNEL TREN
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PMN40UPE,115-NEX |
Hersteller: Nexperia USA Inc.
Description: TRANSISTOR
Description: TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74ALVT16823DGGS |
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Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE DUAL 9BIT 56TSSOP
Packaging: Tube
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Current - Quiescent (Iq): 100 µA
Current - Output High, Low: 8mA, 24mA; 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 3 pF
Supplier Device Package: 56-TSSOP
Max Propagation Delay @ V, Max CL: 3.1ns @ 3.3V, 50pF
Number of Bits per Element: 9
Description: IC FF D-TYPE DUAL 9BIT 56TSSOP
Packaging: Tube
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Current - Quiescent (Iq): 100 µA
Current - Output High, Low: 8mA, 24mA; 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 3 pF
Supplier Device Package: 56-TSSOP
Max Propagation Delay @ V, Max CL: 3.1ns @ 3.3V, 50pF
Number of Bits per Element: 9
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74ALVT16821DGGS |
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Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE DUAL 10BIT 56TSSOP
Packaging: Tube
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Current - Quiescent (Iq): 70 µA
Current - Output High, Low: 8mA, 24mA; 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 56-TSSOP
Max Propagation Delay @ V, Max CL: 3.2ns @ 3.3V, 50pF
Number of Bits per Element: 10
Description: IC FF D-TYPE DUAL 10BIT 56TSSOP
Packaging: Tube
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Current - Quiescent (Iq): 70 µA
Current - Output High, Low: 8mA, 24mA; 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 56-TSSOP
Max Propagation Delay @ V, Max CL: 3.2ns @ 3.3V, 50pF
Number of Bits per Element: 10
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC2G34GW |
Hersteller: Nexperia USA Inc.
Description: BUFFER, LVC/LCX/Z SERIES, 2-FUNC
Packaging: Bulk
Part Status: Active
Description: BUFFER, LVC/LCX/Z SERIES, 2-FUNC
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC1G58GF,132 |
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Hersteller: Nexperia USA Inc.
Description: IC MF CFG 1-CIR 3-IN 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-XSON, SOT891 (1x1)
Number of Circuits: 1
Description: IC MF CFG 1-CIR 3-IN 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-XSON, SOT891 (1x1)
Number of Circuits: 1
auf Bestellung 72660 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3206+ | 0.15 EUR |
| PESD2USB3B/CZ |
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Hersteller: Nexperia USA Inc.
Description: TVS DIODE 4VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Description: TVS DIODE 4VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PESD1USB3B/CZ |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 10WLCSP
Description: TVS DIODE 10WLCSP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PESD3USB3B/CZ |
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 4VWM 3.7VC DSN0603-2
Description: TVS DIODE 4VWM 3.7VC DSN0603-2
Produkt ist nicht verfügbar
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| SZMM3Z4V3T1GX |
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Hersteller: Nexperia USA Inc.
Description: SZMM3Z4V3T1G/SOD323/SOD2
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: SZMM3Z4V3T1G/SOD323/SOD2
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.074 EUR |
| 6000+ | 0.068 EUR |
| 9000+ | 0.057 EUR |
| SZMM3Z4V3T1GX |
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Hersteller: Nexperia USA Inc.
Description: SZMM3Z4V3T1G/SOD323/SOD2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Description: SZMM3Z4V3T1G/SOD323/SOD2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 11870 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 59+ | 0.3 EUR |
| 121+ | 0.15 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.085 EUR |
| BUK9Y22-60ELX |
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Hersteller: Nexperia USA Inc.
Description: SINGLE N-CHANNEL 60 V, 15 MOHM L
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V
Qualification: AEC-Q101
Description: SINGLE N-CHANNEL 60 V, 15 MOHM L
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.98 EUR |
| BUK9Y22-60ELX |
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Hersteller: Nexperia USA Inc.
Description: SINGLE N-CHANNEL 60 V, 15 MOHM L
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V
Qualification: AEC-Q101
Description: SINGLE N-CHANNEL 60 V, 15 MOHM L
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.2 EUR |


























