Produkte > NEXPERIA USA INC. > Alle Produkte des Herstellers NEXPERIA USA INC. (27498) > Seite 264 nach 459

Wählen Sie Seite:   [  << Vorherige Seite ]  1 45 90 135 180 225 259 260 261 262 263 264 265 266 267 268 269 270 315 360 405 450 459  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
BZX58550-C18X BZX58550-C18X Nexperia USA Inc. BZX58550_SER.pdf Description: BZX58550-C18/SOD523/SC-79
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.16 EUR
6000+ 0.14 EUR
15000+ 0.12 EUR
Mindestbestellmenge: 3000
BZX58550-C18X BZX58550-C18X Nexperia USA Inc. BZX58550_SER.pdf Description: BZX58550-C18/SOD523/SC-79
auf Bestellung 20421 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
35+ 0.75 EUR
100+ 0.4 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 28
PSMN030-150B,118 PSMN030-150B,118 Nexperia USA Inc. PSMN030-150B.pdf Description: MOSFET N-CH 150V 55.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Produkt ist nicht verfügbar
PESD5V0U1UT/ZLR Nexperia USA Inc. PESDXU1UT_SER.pdf Description: TVS DIODE 5VWM 21VC TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 80W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PUMH2/DG/B4X PUMH2/DG/B4X Nexperia USA Inc. PEMH2_PUMH2.pdf Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar
PUMH1/DG/B4X PUMH1/DG/B4X Nexperia USA Inc. PEMH1_PUMH1.pdf Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar
PMP4201Y/DG/B3X PMP4201Y/DG/B3X Nexperia USA Inc. PMP4201V_G_Y.pdf Description: TRANS 2NPN MATCHED
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
74AUP1T00GWH 74AUP1T00GWH Nexperia USA Inc. 74AUP1T00.pdf Description: IC GATE NAND 1CH 2-INP 5TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.9V ~ 2.6V
Input Logic Level - Low: 0.1V ~ 0.44V
Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1.2 µA
auf Bestellung 7765 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
26+ 1.01 EUR
28+ 0.94 EUR
100+ 0.75 EUR
250+ 0.7 EUR
500+ 0.59 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 23
BZX84-C6V2/DG/B3:2 BZX84-C6V2/DG/B3:2 Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 6.2V 250MW TO236AB
Produkt ist nicht verfügbar
PMPB07R3VPX PMPB07R3VPX Nexperia USA Inc. PMPB07R3VP.pdf Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.44 EUR
Mindestbestellmenge: 3000
PMPB07R3VPX PMPB07R3VPX Nexperia USA Inc. PMPB07R3VP.pdf Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
auf Bestellung 4672 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.33 EUR
24+ 1.12 EUR
100+ 0.78 EUR
500+ 0.61 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 20
PMPB09R5VPX PMPB09R5VPX Nexperia USA Inc. PMPB09R5VP.pdf Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.35 EUR
Mindestbestellmenge: 3000
PMPB09R5VPX PMPB09R5VPX Nexperia USA Inc. PMPB09R5VP.pdf Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
auf Bestellung 3886 Stücke:
Lieferzeit 21-28 Tag (e)
26+1.01 EUR
30+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 26
PMPB12R5EPX PMPB12R5EPX Nexperia USA Inc. PMPB12R5EP.pdf Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Produkt ist nicht verfügbar
PMPB12R5EPX PMPB12R5EPX Nexperia USA Inc. PMPB12R5EP.pdf Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Produkt ist nicht verfügbar
PMPB07R3ENX PMPB07R3ENX Nexperia USA Inc. Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.42 EUR
6000+ 0.4 EUR
Mindestbestellmenge: 3000
PMPB07R3ENX PMPB07R3ENX Nexperia USA Inc. Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
auf Bestellung 6141 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
25+ 1.07 EUR
100+ 0.75 EUR
500+ 0.58 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 21
NXS0101GMX NXS0101GMX Nexperia USA Inc. NXS0101.pdf Description: IC TRANSLTR BIDIRECTIONAL 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 3.6 V
Voltage - VCCB: 2.3 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 9706 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
30+ 0.88 EUR
32+ 0.82 EUR
100+ 0.66 EUR
250+ 0.61 EUR
500+ 0.52 EUR
1000+ 0.4 EUR
2500+ 0.37 EUR
Mindestbestellmenge: 25
BUK7M9R9-60EX BUK7M9R9-60EX Nexperia USA Inc. BUK7M9R9-60E.pdf Description: MOSFET N-CH 60V 60A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
1500+0.98 EUR
3000+ 0.92 EUR
Mindestbestellmenge: 1500
BUK7M9R9-60EX BUK7M9R9-60EX Nexperia USA Inc. BUK7M9R9-60E.pdf Description: MOSFET N-CH 60V 60A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5044 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.21 EUR
15+ 1.81 EUR
100+ 1.41 EUR
500+ 1.2 EUR
Mindestbestellmenge: 12
BUK7M22-80EX BUK7M22-80EX Nexperia USA Inc. BUK7M22-80E.pdf Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 21-28 Tag (e)
1500+0.94 EUR
3000+ 0.89 EUR
7500+ 0.84 EUR
10500+ 0.8 EUR
Mindestbestellmenge: 1500
BUK7M22-80EX BUK7M22-80EX Nexperia USA Inc. BUK7M22-80E.pdf Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11462 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.13 EUR
15+ 1.75 EUR
100+ 1.36 EUR
500+ 1.15 EUR
Mindestbestellmenge: 13
BUK7M67-60EX BUK7M67-60EX Nexperia USA Inc. BUK7M67-60E.pdf Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BUK7M67-60EX BUK7M67-60EX Nexperia USA Inc. BUK7M67-60E.pdf Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1378 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.59 EUR
20+ 1.35 EUR
100+ 0.94 EUR
500+ 0.73 EUR
Mindestbestellmenge: 17
BZX884S-B22YL BZX884S-B22YL Nexperia USA Inc. BZX884S_SER.pdf Description: BZX884S-B22/SOD882BD/XSON2
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006BD-2
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Produkt ist nicht verfügbar
BZX884S-B22YL BZX884S-B22YL Nexperia USA Inc. BZX884S_SER.pdf Description: BZX884S-B22/SOD882BD/XSON2
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006BD-2
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Produkt ist nicht verfügbar
74HCT257PW,118 74HCT257PW,118 Nexperia USA Inc. 74HC_HCT257.pdf Description: IC MULTIPLEXER 4 X 2:1 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
auf Bestellung 17918 Stücke:
Lieferzeit 21-28 Tag (e)
1803+0.41 EUR
Mindestbestellmenge: 1803
74AHCT257D,112 74AHCT257D,112 Nexperia USA Inc. 74AHC_AHCT257.pdf Description: IC MULTIPLEXER 4 X 2:1 16SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Part Status: Obsolete
auf Bestellung 42878 Stücke:
Lieferzeit 21-28 Tag (e)
1956+0.39 EUR
Mindestbestellmenge: 1956
74LVC126ABQ-Q100X 74LVC126ABQ-Q100X Nexperia USA Inc. 74LVC126A_Q100.pdf Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
74LVC126ABQ-Q100X 74LVC126ABQ-Q100X Nexperia USA Inc. 74LVC126A_Q100.pdf Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
74HCT241D,652 74HCT241D,652 Nexperia USA Inc. PHGLS06122-1.pdf?t.download=true&u=5oefqw Description: IC BUFFER NON-INVERT 5.5V 20SO
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SO
Part Status: Active
auf Bestellung 14058 Stücke:
Lieferzeit 21-28 Tag (e)
929+0.77 EUR
Mindestbestellmenge: 929
74HC241DB,118 74HC241DB,118 Nexperia USA Inc. 74HC_HCT241.pdf Description: IC BUFFER NON-INVERT 6V 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
786+0.91 EUR
Mindestbestellmenge: 786
74HCT240DB,118-NEX 74HCT240DB,118-NEX Nexperia USA Inc. Description: IC BUFFER INVERT 5.5V 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Active
Produkt ist nicht verfügbar
74HCT240PW118 74HCT240PW118 Nexperia USA Inc. 74HC_HCT240.pdf Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
74HCT240DB,118 74HCT240DB,118 Nexperia USA Inc. 74HC_HCT240.pdf Description: IC BUFFER INVERT 5.5V 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
1076+0.67 EUR
Mindestbestellmenge: 1076
74HCT240BQ,115 74HCT240BQ,115 Nexperia USA Inc. 74HC_HCT240.pdf Description: IC BUFFER INVERT 5.5V 20DHVQFN
Packaging: Bulk
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
1560+0.46 EUR
Mindestbestellmenge: 1560
BUK9245-55A/C1118 BUK9245-55A/C1118 Nexperia USA Inc. BUK9245-55A.pdf Description: NEXPERIA BUK9245-55A - POWER FIE
Packaging: Bulk
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
1368+0.57 EUR
Mindestbestellmenge: 1368
BUK664R4-55C,118 BUK664R4-55C,118 Nexperia USA Inc. NEXP-S-A0003059678-1.pdf?t.download=true&u=5oefqw Description: NEXPERIA BUK664R4 - N-CHANNEL T
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Produkt ist nicht verfügbar
BZX884S-B16-QYL BZX884S-B16-QYL Nexperia USA Inc. BZX884S-Q_SER.pdf Description: BZX884S-B16-Q/SOD882BD/XSON2
Tolerance: ±1.88%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BZX884S-B16-QYL BZX884S-B16-QYL Nexperia USA Inc. BZX884S-Q_SER.pdf Description: BZX884S-B16-Q/SOD882BD/XSON2
Tolerance: ±1.88%
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
auf Bestellung 9350 Stücke:
Lieferzeit 21-28 Tag (e)
38+0.7 EUR
55+ 0.48 EUR
112+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
5000+ 0.11 EUR
Mindestbestellmenge: 38
PDTC124XQB-QZ Nexperia USA Inc. PDTC143X_TO_124XQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.11 EUR
Mindestbestellmenge: 5000
PDTC124XQB-QZ Nexperia USA Inc. PDTC143X_TO_124XQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.68 EUR
56+ 0.47 EUR
115+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC123JQC-QZ PDTC123JQC-QZ Nexperia USA Inc. PDTC143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC123JQC-QZ PDTC123JQC-QZ Nexperia USA Inc. PDTC143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.68 EUR
57+ 0.46 EUR
116+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC124XQC-QZ PDTC124XQC-QZ Nexperia USA Inc. PDTC143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC124XQC-QZ PDTC124XQC-QZ Nexperia USA Inc. PDTC143X_TO_124XQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.68 EUR
57+ 0.46 EUR
116+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC124EQC-QZ PDTC124EQC-QZ Nexperia USA Inc. PDTC143_114_124_144EQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDTC124EQC-QZ PDTC124EQC-QZ Nexperia USA Inc. PDTC143_114_124_144EQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 4870 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.68 EUR
58+ 0.46 EUR
117+ 0.22 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC124EQB-QZ Nexperia USA Inc. PDTC143_114_124_144EQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.11 EUR
Mindestbestellmenge: 5000
PDTC124EQB-QZ Nexperia USA Inc. PDTC143_114_124_144EQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.68 EUR
56+ 0.47 EUR
115+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC123JQB-QZ Nexperia USA Inc. PDTC143X_TO_124XQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.11 EUR
Mindestbestellmenge: 5000
PDTC123JQB-QZ Nexperia USA Inc. PDTC143X_TO_124XQB-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.68 EUR
56+ 0.47 EUR
115+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC114EQC-QZ PDTC114EQC-QZ Nexperia USA Inc. PDTC143_114_124_144EQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC114EQC-QZ PDTC114EQC-QZ Nexperia USA Inc. PDTC143_114_124_144EQC-Q_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.68 EUR
57+ 0.46 EUR
116+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC124XQCZ PDTC124XQCZ Nexperia USA Inc. PDTC143X_TO_124XQC_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC124XQCZ PDTC124XQCZ Nexperia USA Inc. PDTC143X_TO_124XQC_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 40
PDTC123JQCZ PDTC123JQCZ Nexperia USA Inc. PDTC143X_TO_124XQC_SER.pdf Description: PDTC123JQC/SOT8009/DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC123JQCZ PDTC123JQCZ Nexperia USA Inc. PDTC143X_TO_124XQC_SER.pdf Description: PDTC123JQC/SOT8009/DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 40
PZU2.7B2L,315 PZU2.7B2L,315 Nexperia USA Inc. PZUXBL_SER.pdf Description: DIODE ZENER 2.7V 250MW DFN1006-2
Produkt ist nicht verfügbar
PZU2.7B2L,315 PZU2.7B2L,315 Nexperia USA Inc. PZUXBL_SER.pdf Description: DIODE ZENER 2.7V 250MW DFN1006-2
auf Bestellung 130000 Stücke:
Lieferzeit 21-28 Tag (e)
10724+0.076 EUR
Mindestbestellmenge: 10724
BZX58550-C18X BZX58550_SER.pdf
BZX58550-C18X
Hersteller: Nexperia USA Inc.
Description: BZX58550-C18/SOD523/SC-79
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
6000+ 0.14 EUR
15000+ 0.12 EUR
Mindestbestellmenge: 3000
BZX58550-C18X BZX58550_SER.pdf
BZX58550-C18X
Hersteller: Nexperia USA Inc.
Description: BZX58550-C18/SOD523/SC-79
auf Bestellung 20421 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
35+ 0.75 EUR
100+ 0.4 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 28
PSMN030-150B,118 PSMN030-150B.pdf
PSMN030-150B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 150V 55.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Produkt ist nicht verfügbar
PESD5V0U1UT/ZLR PESDXU1UT_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 21VC TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 80W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
PUMH2/DG/B4X PEMH2_PUMH2.pdf
PUMH2/DG/B4X
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar
PUMH1/DG/B4X PEMH1_PUMH1.pdf
PUMH1/DG/B4X
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: 6-TSSOP
Produkt ist nicht verfügbar
PMP4201Y/DG/B3X PMP4201V_G_Y.pdf
PMP4201Y/DG/B3X
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN MATCHED
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
74AUP1T00GWH 74AUP1T00.pdf
74AUP1T00GWH
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 1CH 2-INP 5TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.9V ~ 2.6V
Input Logic Level - Low: 0.1V ~ 0.44V
Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1.2 µA
auf Bestellung 7765 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
26+ 1.01 EUR
28+ 0.94 EUR
100+ 0.75 EUR
250+ 0.7 EUR
500+ 0.59 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 23
BZX84-C6V2/DG/B3:2 PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C6V2/DG/B3:2
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 250MW TO236AB
Produkt ist nicht verfügbar
PMPB07R3VPX PMPB07R3VP.pdf
PMPB07R3VPX
Hersteller: Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.44 EUR
Mindestbestellmenge: 3000
PMPB07R3VPX PMPB07R3VP.pdf
PMPB07R3VPX
Hersteller: Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
auf Bestellung 4672 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.33 EUR
24+ 1.12 EUR
100+ 0.78 EUR
500+ 0.61 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 20
PMPB09R5VPX PMPB09R5VP.pdf
PMPB09R5VPX
Hersteller: Nexperia USA Inc.
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
Mindestbestellmenge: 3000
PMPB09R5VPX PMPB09R5VP.pdf
PMPB09R5VPX
Hersteller: Nexperia USA Inc.
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
auf Bestellung 3886 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
30+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 26
PMPB12R5EPX PMPB12R5EP.pdf
PMPB12R5EPX
Hersteller: Nexperia USA Inc.
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Produkt ist nicht verfügbar
PMPB12R5EPX PMPB12R5EP.pdf
PMPB12R5EPX
Hersteller: Nexperia USA Inc.
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Produkt ist nicht verfügbar
PMPB07R3ENX
PMPB07R3ENX
Hersteller: Nexperia USA Inc.
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.42 EUR
6000+ 0.4 EUR
Mindestbestellmenge: 3000
PMPB07R3ENX
PMPB07R3ENX
Hersteller: Nexperia USA Inc.
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
auf Bestellung 6141 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
25+ 1.07 EUR
100+ 0.75 EUR
500+ 0.58 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 21
NXS0101GMX NXS0101.pdf
NXS0101GMX
Hersteller: Nexperia USA Inc.
Description: IC TRANSLTR BIDIRECTIONAL 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 3.6 V
Voltage - VCCB: 2.3 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 9706 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
30+ 0.88 EUR
32+ 0.82 EUR
100+ 0.66 EUR
250+ 0.61 EUR
500+ 0.52 EUR
1000+ 0.4 EUR
2500+ 0.37 EUR
Mindestbestellmenge: 25
BUK7M9R9-60EX BUK7M9R9-60E.pdf
BUK7M9R9-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.98 EUR
3000+ 0.92 EUR
Mindestbestellmenge: 1500
BUK7M9R9-60EX BUK7M9R9-60E.pdf
BUK7M9R9-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5044 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.21 EUR
15+ 1.81 EUR
100+ 1.41 EUR
500+ 1.2 EUR
Mindestbestellmenge: 12
BUK7M22-80EX BUK7M22-80E.pdf
BUK7M22-80EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.94 EUR
3000+ 0.89 EUR
7500+ 0.84 EUR
10500+ 0.8 EUR
Mindestbestellmenge: 1500
BUK7M22-80EX BUK7M22-80E.pdf
BUK7M22-80EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11462 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.13 EUR
15+ 1.75 EUR
100+ 1.36 EUR
500+ 1.15 EUR
Mindestbestellmenge: 13
BUK7M67-60EX BUK7M67-60E.pdf
BUK7M67-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BUK7M67-60EX BUK7M67-60E.pdf
BUK7M67-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1378 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.59 EUR
20+ 1.35 EUR
100+ 0.94 EUR
500+ 0.73 EUR
Mindestbestellmenge: 17
BZX884S-B22YL BZX884S_SER.pdf
BZX884S-B22YL
Hersteller: Nexperia USA Inc.
Description: BZX884S-B22/SOD882BD/XSON2
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006BD-2
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Produkt ist nicht verfügbar
BZX884S-B22YL BZX884S_SER.pdf
BZX884S-B22YL
Hersteller: Nexperia USA Inc.
Description: BZX884S-B22/SOD882BD/XSON2
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006BD-2
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Produkt ist nicht verfügbar
74HCT257PW,118 74HC_HCT257.pdf
74HCT257PW,118
Hersteller: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
auf Bestellung 17918 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1803+0.41 EUR
Mindestbestellmenge: 1803
74AHCT257D,112 74AHC_AHCT257.pdf
74AHCT257D,112
Hersteller: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Part Status: Obsolete
auf Bestellung 42878 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1956+0.39 EUR
Mindestbestellmenge: 1956
74LVC126ABQ-Q100X 74LVC126A_Q100.pdf
74LVC126ABQ-Q100X
Hersteller: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
74LVC126ABQ-Q100X 74LVC126A_Q100.pdf
74LVC126ABQ-Q100X
Hersteller: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
74HCT241D,652 PHGLS06122-1.pdf?t.download=true&u=5oefqw
74HCT241D,652
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 20SO
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SO
Part Status: Active
auf Bestellung 14058 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
929+0.77 EUR
Mindestbestellmenge: 929
74HC241DB,118 74HC_HCT241.pdf
74HC241DB,118
Hersteller: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
786+0.91 EUR
Mindestbestellmenge: 786
74HCT240DB,118-NEX
74HCT240DB,118-NEX
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Active
Produkt ist nicht verfügbar
74HCT240PW118 74HC_HCT240.pdf
74HCT240PW118
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
74HCT240DB,118 74HC_HCT240.pdf
74HCT240DB,118
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1076+0.67 EUR
Mindestbestellmenge: 1076
74HCT240BQ,115 74HC_HCT240.pdf
74HCT240BQ,115
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20DHVQFN
Packaging: Bulk
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1560+0.46 EUR
Mindestbestellmenge: 1560
BUK9245-55A/C1118 BUK9245-55A.pdf
BUK9245-55A/C1118
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BUK9245-55A - POWER FIE
Packaging: Bulk
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1368+0.57 EUR
Mindestbestellmenge: 1368
BUK664R4-55C,118 NEXP-S-A0003059678-1.pdf?t.download=true&u=5oefqw
BUK664R4-55C,118
Hersteller: Nexperia USA Inc.
Description: NEXPERIA BUK664R4 - N-CHANNEL T
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Produkt ist nicht verfügbar
BZX884S-B16-QYL BZX884S-Q_SER.pdf
BZX884S-B16-QYL
Hersteller: Nexperia USA Inc.
Description: BZX884S-B16-Q/SOD882BD/XSON2
Tolerance: ±1.88%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BZX884S-B16-QYL BZX884S-Q_SER.pdf
BZX884S-B16-QYL
Hersteller: Nexperia USA Inc.
Description: BZX884S-B16-Q/SOD882BD/XSON2
Tolerance: ±1.88%
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
auf Bestellung 9350 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
38+0.7 EUR
55+ 0.48 EUR
112+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
5000+ 0.11 EUR
Mindestbestellmenge: 38
PDTC124XQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.11 EUR
Mindestbestellmenge: 5000
PDTC124XQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
39+0.68 EUR
56+ 0.47 EUR
115+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC123JQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
PDTC123JQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC123JQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
PDTC123JQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
39+0.68 EUR
57+ 0.46 EUR
116+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC124XQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
PDTC124XQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC124XQC-QZ PDTC143X_TO_124XQC-Q_SER.pdf
PDTC124XQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
39+0.68 EUR
57+ 0.46 EUR
116+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC124EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf
PDTC124EQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDTC124EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf
PDTC124EQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 4870 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
39+0.68 EUR
58+ 0.46 EUR
117+ 0.22 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC124EQB-QZ PDTC143_114_124_144EQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.11 EUR
Mindestbestellmenge: 5000
PDTC124EQB-QZ PDTC143_114_124_144EQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
39+0.68 EUR
56+ 0.47 EUR
115+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC123JQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.11 EUR
Mindestbestellmenge: 5000
PDTC123JQB-QZ PDTC143X_TO_124XQB-Q_SER.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
39+0.68 EUR
56+ 0.47 EUR
115+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC114EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf
PDTC114EQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC114EQC-QZ PDTC143_114_124_144EQC-Q_SER.pdf
PDTC114EQC-QZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
39+0.68 EUR
57+ 0.46 EUR
116+ 0.23 EUR
500+ 0.19 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 39
PDTC124XQCZ PDTC143X_TO_124XQC_SER.pdf
PDTC124XQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC124XQCZ PDTC143X_TO_124XQC_SER.pdf
PDTC124XQCZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 40
PDTC123JQCZ PDTC143X_TO_124XQC_SER.pdf
PDTC123JQCZ
Hersteller: Nexperia USA Inc.
Description: PDTC123JQC/SOT8009/DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.1 EUR
Mindestbestellmenge: 5000
PDTC123JQCZ PDTC143X_TO_124XQC_SER.pdf
PDTC123JQCZ
Hersteller: Nexperia USA Inc.
Description: PDTC123JQC/SOT8009/DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
2000+ 0.11 EUR
Mindestbestellmenge: 40
PZU2.7B2L,315 PZUXBL_SER.pdf
PZU2.7B2L,315
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 250MW DFN1006-2
Produkt ist nicht verfügbar
PZU2.7B2L,315 PZUXBL_SER.pdf
PZU2.7B2L,315
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 250MW DFN1006-2
auf Bestellung 130000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10724+0.076 EUR
Mindestbestellmenge: 10724
Wählen Sie Seite:   [  << Vorherige Seite ]  1 45 90 135 180 225 259 260 261 262 263 264 265 266 267 268 269 270 315 360 405 450 459  [ Nächste Seite >> ]