Produkte > NEXPERIA USA INC. > Alle Produkte des Herstellers NEXPERIA USA INC. (31975) > Seite 423 nach 533
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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HEF4028BT,652 | Nexperia USA Inc. |
Description: IC DECODER 1 X 4:10 16-SOPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 4:10 Type: Decoder Voltage - Supply: 4.5V ~ 15.5V Independent Circuits: 1 Voltage Supply Source: Dual Supply Supplier Device Package: 16-SO |
auf Bestellung 18113 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN0R9-30ULD/2X | Nexperia USA Inc. |
Description: PSMN0R9-30ULD/SOT1023/4 LEADSPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PDTA144EMB,315 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1006B-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74HCT4046ADB,118 | Nexperia USA Inc. |
Description: PLL FREQUENCY SYNTHESIZER, CMOS,Packaging: Bulk Package / Case: 16-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 21MHz Type: Phase Lock Loop (PLL) Input: Clock Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Differential - Input:Output: No/No Supplier Device Package: 16-SSOP PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 5843 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC237D,652 | Nexperia USA Inc. |
Description: IC DECODER/DEMUX 1 X 3:8 16-SOPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SO |
auf Bestellung 49138 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK765R2-40B,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V Power Dissipation (Max): 203W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4700 Stücke: Lieferzeit 10-14 Tag (e) |
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74AHCT373D,118 | Nexperia USA Inc. |
Description: BUS DRIVERPackaging: Bulk |
auf Bestellung 5551 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FS256SDSBHI200 | Nexperia USA Inc. |
Description: S25FS256S - 256-Mbit MIRRORBIT FPackaging: Bulk |
auf Bestellung 595 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX8450-C30-QVL | Nexperia USA Inc. |
Description: BZX8450-C30-Q/SOT23/TO-236ABTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: TO-236AB Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 22.8 V Qualification: AEC-Q100 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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74AXP1G07GXH | Nexperia USA Inc. |
Description: NEXPERIA 74AXP1G07 - LOW-POWER BPackaging: Bulk |
auf Bestellung 170000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74AXP1G57GSH | Nexperia USA Inc. |
Description: NEXPERIA 74AXP1G57 - LOW-POWER CPackaging: Bulk |
auf Bestellung 195000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PBSS4350PASX | Nexperia USA Inc. |
Description: PBSS4350PAS/SOT1061/HUSON3Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PBSS4350PASX | Nexperia USA Inc. |
Description: PBSS4350PAS/SOT1061/HUSON3Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PBSS4350PAS-QX | Nexperia USA Inc. |
Description: PBSS4350PAS-Q/SOT1061/HUSON3Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: DFN2020D-3 Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PBSS4350PAS-QX | Nexperia USA Inc. |
Description: PBSS4350PAS-Q/SOT1061/HUSON3Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: DFN2020D-3 Grade: Automotive Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: AEC-Q101 |
auf Bestellung 2997 Stücke: Lieferzeit 10-14 Tag (e) |
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PBSS5250PASX | Nexperia USA Inc. |
Description: PBSS5250PAS/SOT1061/HUSON3Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PBSS5250PAS-QX | Nexperia USA Inc. |
Description: PBSS5250PAS-Q/SOT1061/HUSON3Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GANE3R9-150QBAZ | Nexperia USA Inc. |
Description: GANE3R9-150QBA/SOT8091/VQFN7Packaging: Tape & Reel (TR) Package / Case: 25-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Power Dissipation (Max): 65W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GANE3R9-150QBAZ | Nexperia USA Inc. |
Description: GANE3R9-150QBA/SOT8091/VQFN7Packaging: Cut Tape (CT) Package / Case: 25-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V Power Dissipation (Max): 65W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 12mA Supplier Device Package: 25-VQFN (4x6) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V |
auf Bestellung 1933 Stücke: Lieferzeit 10-14 Tag (e) |
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NSF080120D7A0J | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 33A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 2mA Supplier Device Package: TO-236-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSF080120D7A0J | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 33A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 2mA Supplier Device Package: TO-236-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V |
auf Bestellung 573 Stücke: Lieferzeit 10-14 Tag (e) |
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NSF060120D7A0J | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 38A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 2mA Supplier Device Package: TO-236-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSF060120D7A0J | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 38A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 2mA Supplier Device Package: TO-236-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V |
auf Bestellung 770 Stücke: Lieferzeit 10-14 Tag (e) |
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NSF060120L3A0Q | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 37A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 2mA Supplier Device Package: TO-247-3L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V |
auf Bestellung 435 Stücke: Lieferzeit 10-14 Tag (e) |
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NSF060120L4A0Q | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 37A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 2mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V |
auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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NSF040120D7A0J | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 65A TO263Supplier Device Package: TO-236-7 Vgs(th) (Max) @ Id: 2.9V @ 4mA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSF040120D7A0J | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 65A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 4mA Supplier Device Package: TO-236-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V |
auf Bestellung 797 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSF030120L4A0Q | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 67A TO247-4 Packaging: Tube |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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NSF030120D7A0J | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 67A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 4mA Supplier Device Package: TO-236-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSF030120D7A0J | Nexperia USA Inc. |
Description: SICFET N-CH 1200V 67A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 4mA Supplier Device Package: TO-236-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V |
auf Bestellung 793 Stücke: Lieferzeit 10-14 Tag (e) |
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74HCT366PW-Q100,11 | Nexperia USA Inc. |
Description: IC BUFF 4.5V/5.5V 16-TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 6 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 16-TSSOP Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 44017 Stücke: Lieferzeit 10-14 Tag (e) |
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74HCT368PW,118 | Nexperia USA Inc. |
Description: IC BUFFER INVERT 5.5V 16TSSOPPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 2, 4 (Hex) Current - Output High, Low: 6mA, 6mA Supplier Device Package: 16-TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84W-B9V1-QF | Nexperia USA Inc. |
Description: BZX84W-B9V1-Q/SOT323/SC-70Tolerance: ±1.98% Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-323 Grade: Automotive Power - Max: 275 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 6 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZT52H-B9V1-QX | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 375MW SOD123FTolerance: ±1.98% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-123F Grade: Automotive Power - Max: 375 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 6 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84W-B9V1-QX | Nexperia USA Inc. |
Description: BZX84W-B9V1-Q/SOT323/SC-70Tolerance: ±1.98% Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-323 Grade: Automotive Power - Max: 275 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 6 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NZX14B,133 | Nexperia USA Inc. |
Description: DIODE ZENER 13.75V 500MW ALF2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 13.75 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: ALF2 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V |
auf Bestellung 9631 Stücke: Lieferzeit 10-14 Tag (e) |
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NZX14B,133 | Nexperia USA Inc. |
Description: DIODE ZENER 13.75V 500MW ALF2Tolerance: ±2% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 13.75 V Impedance (Max) (Zzt): 35 Ohms Supplier Device Package: ALF2 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX79-C30,133 | Nexperia USA Inc. |
Description: DIODE ZENER 30V 400MW ALF2Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: ALF2 Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 700 mV |
auf Bestellung 1454 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX79-C30,133 | Nexperia USA Inc. |
Description: DIODE ZENER 30V 400MW ALF2Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: ALF2 Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 700 mV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX384-A3V3-QX | Nexperia USA Inc. |
Description: DIODE ZENER 3.3V 300MW SOD323Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX384-A3V3-QX | Nexperia USA Inc. |
Description: DIODE ZENER 3.3V 300MW SOD323Tolerance: ±1% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 20585 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX384-A10-QX | Nexperia USA Inc. |
Description: DIODE ZENER 10V 300MW SOD323Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX384-A10-QX | Nexperia USA Inc. |
Description: DIODE ZENER 10V 300MW SOD323Tolerance: ±1% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V Qualification: AEC-Q101 |
auf Bestellung 1096 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX384-A2V7-QX | Nexperia USA Inc. |
Description: DIODE ZENER 2.7V 300MW SOD323Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX384-A2V7-QX | Nexperia USA Inc. |
Description: DIODE ZENER 2.7V 300MW SOD323Tolerance: ±1% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 1285 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX384-A3V6-QX | Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 300MW SOD323Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX384-A3V6-QX | Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 300MW SOD323Tolerance: ±1% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 1356 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX384-A5V6-QX | Nexperia USA Inc. |
Description: DIODE ZENER 5.6V 300MW SOD323Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX384-A5V6-QX | Nexperia USA Inc. |
Description: DIODE ZENER 5.6V 300MW SOD323Tolerance: ±1% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V Qualification: AEC-Q101 |
auf Bestellung 5390 Stücke: Lieferzeit 10-14 Tag (e) |
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74HCT164DB,112 | Nexperia USA Inc. |
Description: NEXPERIA 74HCT164DB - SERIAL INPackaging: Bulk |
auf Bestellung 11622 Stücke: Lieferzeit 10-14 Tag (e) |
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PZU4.7B,115 | Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 310MW SOD323FTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323F Grade: Automotive Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PZU4.7B,115 | Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 310MW SOD323FTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323F Grade: Automotive Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCX18,215 | Nexperia USA Inc. |
Description: TRANS PNP 25V 0.5A TO-236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 250 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCX18,215 | Nexperia USA Inc. |
Description: TRANS PNP 25V 0.5A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 250 mW Qualification: AEC-Q101 |
auf Bestellung 2347 Stücke: Lieferzeit 10-14 Tag (e) |
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PUMB2F | Nexperia USA Inc. |
Description: TRANS PREBIAS 2PNP 50V 6-TSSOPPackaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Frequency - Transition: 180MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 110000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52-B30X | Nexperia USA Inc. |
Description: DIODE ZENER 30V 590MW SOD123Tolerance: ±2% Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 590 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 21 V Qualification: AEC-Q101 |
auf Bestellung 72980 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX884-C16,315 | Nexperia USA Inc. |
Description: DIODE ZENER 16V 250MW DFN1006-2Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DFN1006-2 Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX884-C16,315 | Nexperia USA Inc. |
Description: DIODE ZENER 16V 250MW DFN1006-2Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DFN1006-2 Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V Qualification: AEC-Q100 |
auf Bestellung 3869 Stücke: Lieferzeit 10-14 Tag (e) |
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74HC00DB,112 | Nexperia USA Inc. |
Description: IC GATE NANDPackaging: Bulk |
auf Bestellung 4785 Stücke: Lieferzeit 10-14 Tag (e) |
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PMEG2015EV,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 1.5A SOT666Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 25pF @ 5V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: SOT-666 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| HEF4028BT,652 |
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Hersteller: Nexperia USA Inc.
Description: IC DECODER 1 X 4:10 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:10
Type: Decoder
Voltage - Supply: 4.5V ~ 15.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SO
Description: IC DECODER 1 X 4:10 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:10
Type: Decoder
Voltage - Supply: 4.5V ~ 15.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SO
auf Bestellung 18113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 478+ | 1.15 EUR |
| PSMN0R9-30ULD/2X |
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Hersteller: Nexperia USA Inc.
Description: PSMN0R9-30ULD/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
Description: PSMN0R9-30ULD/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PDTA144EMB,315 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74HCT4046ADB,118 |
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Hersteller: Nexperia USA Inc.
Description: PLL FREQUENCY SYNTHESIZER, CMOS,
Packaging: Bulk
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 21MHz
Type: Phase Lock Loop (PLL)
Input: Clock
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Differential - Input:Output: No/No
Supplier Device Package: 16-SSOP
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: PLL FREQUENCY SYNTHESIZER, CMOS,
Packaging: Bulk
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 21MHz
Type: Phase Lock Loop (PLL)
Input: Clock
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Differential - Input:Output: No/No
Supplier Device Package: 16-SSOP
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 5843 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 182+ | 2.94 EUR |
| 74HC237D,652 |
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Hersteller: Nexperia USA Inc.
Description: IC DECODER/DEMUX 1 X 3:8 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Description: IC DECODER/DEMUX 1 X 3:8 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
auf Bestellung 49138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 368+ | 1.46 EUR |
| BUK765R2-40B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 311+ | 1.78 EUR |
| 74AHCT373D,118 |
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auf Bestellung 5551 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 621+ | 0.87 EUR |
| S25FS256SDSBHI200 |
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auf Bestellung 595 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 10.08 EUR |
| BZX8450-C30-QVL |
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Hersteller: Nexperia USA Inc.
Description: BZX8450-C30-Q/SOT23/TO-236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 22.8 V
Qualification: AEC-Q100
Description: BZX8450-C30-Q/SOT23/TO-236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 22.8 V
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.054 EUR |
| 74AXP1G07GXH |
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auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)
| 74AXP1G57GSH |
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auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
| PBSS4350PASX |
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Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PBSS4350PAS-QX |
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Hersteller: Nexperia USA Inc.
Description: PBSS4350PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: AEC-Q101
Description: PBSS4350PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PBSS4350PAS-QX |
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Hersteller: Nexperia USA Inc.
Description: PBSS4350PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: AEC-Q101
Description: PBSS4350PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: AEC-Q101
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.34 EUR |
| 25+ | 0.84 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.37 EUR |
| GANE3R9-150QBAZ |
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Hersteller: Nexperia USA Inc.
Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Tape & Reel (TR)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Tape & Reel (TR)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GANE3R9-150QBAZ |
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Hersteller: Nexperia USA Inc.
Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Cut Tape (CT)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Cut Tape (CT)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
auf Bestellung 1933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.26 EUR |
| 10+ | 11.8 EUR |
| 100+ | 8.78 EUR |
| NSF080120D7A0J |
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Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Description: SICFET N-CH 1200V 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSF080120D7A0J |
![]() |
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 33A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Description: SICFET N-CH 1200V 33A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 573 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.87 EUR |
| 10+ | 18.11 EUR |
| 100+ | 14.92 EUR |
| NSF060120D7A0J |
![]() |
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 38A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Description: SICFET N-CH 1200V 38A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSF060120D7A0J |
![]() |
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 38A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Description: SICFET N-CH 1200V 38A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.35 EUR |
| 10+ | 20.68 EUR |
| 100+ | 17.55 EUR |
| NSF060120L3A0Q |
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Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Description: SICFET N-CH 1200V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.35 EUR |
| 10+ | 20.68 EUR |
| NSF060120L4A0Q |
![]() |
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 31.08 EUR |
| 10+ | 21.98 EUR |
| NSF040120D7A0J |
![]() |
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 65A TO263
Supplier Device Package: TO-236-7
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Packaging: Tape & Reel (TR)
Description: SICFET N-CH 1200V 65A TO263
Supplier Device Package: TO-236-7
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSF040120D7A0J |
![]() |
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Description: SICFET N-CH 1200V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.51 EUR |
| 10+ | 26.06 EUR |
| 100+ | 23.25 EUR |
| NSF030120L4A0Q |
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 42.41 EUR |
| 10+ | 30.55 EUR |
| NSF030120D7A0J |
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Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 67A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Description: SICFET N-CH 1200V 67A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSF030120D7A0J |
![]() |
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 67A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Description: SICFET N-CH 1200V 67A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
auf Bestellung 793 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 41.45 EUR |
| 10+ | 29.81 EUR |
| 100+ | 27.36 EUR |
| 74HCT366PW-Q100,11 |
![]() |
Hersteller: Nexperia USA Inc.
Description: IC BUFF 4.5V/5.5V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 6
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFF 4.5V/5.5V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 6
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 44017 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 344+ | 1.55 EUR |
| 74HCT368PW,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 16-TSSOP
Description: IC BUFFER INVERT 5.5V 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84W-B9V1-QF |
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Hersteller: Nexperia USA Inc.
Description: BZX84W-B9V1-Q/SOT323/SC-70
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Description: BZX84W-B9V1-Q/SOT323/SC-70
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52H-B9V1-QX |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 375MW SOD123F
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Description: DIODE ZENER 9.1V 375MW SOD123F
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX84W-B9V1-QX |
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Hersteller: Nexperia USA Inc.
Description: BZX84W-B9V1-Q/SOT323/SC-70
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Description: BZX84W-B9V1-Q/SOT323/SC-70
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NZX14B,133 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13.75V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13.75 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Description: DIODE ZENER 13.75V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13.75 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
auf Bestellung 9631 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 94+ | 0.23 EUR |
| 152+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.088 EUR |
| 2000+ | 0.079 EUR |
| 5000+ | 0.067 EUR |
| NZX14B,133 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13.75V 500MW ALF2
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13.75 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Description: DIODE ZENER 13.75V 500MW ALF2
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13.75 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX79-C30,133 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: ALF2
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Description: DIODE ZENER 30V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: ALF2
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
auf Bestellung 1454 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 0.25 EUR |
| 132+ | 0.15 EUR |
| 216+ | 0.096 EUR |
| 500+ | 0.07 EUR |
| 1000+ | 0.062 EUR |
| BZX79-C30,133 |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 400MW ALF2
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: ALF2
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Description: DIODE ZENER 30V 400MW ALF2
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: ALF2
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX384-A3V3-QX |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 300MW SOD323
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 300MW SOD323
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.27 EUR |
| 9000+ | 0.26 EUR |
| 15000+ | 0.25 EUR |
| BZX384-A3V3-QX |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 300MW SOD323
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 300MW SOD323
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 20585 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.32 EUR |
| 26+ | 0.81 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.36 EUR |
| BZX384-A10-QX |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 300MW SOD323
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 300MW SOD323
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX384-A10-QX |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 300MW SOD323
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
Description: DIODE ZENER 10V 300MW SOD323
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Qualification: AEC-Q101
auf Bestellung 1096 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.19 EUR |
| 29+ | 0.74 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |
| BZX384-A2V7-QX |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 300MW SOD323
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 300MW SOD323
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX384-A2V7-QX |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 300MW SOD323
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 300MW SOD323
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 1285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.49 EUR |
| 23+ | 0.92 EUR |
| 50+ | 0.67 EUR |
| 100+ | 0.6 EUR |
| BZX384-A3V6-QX |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 300MW SOD323
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 300MW SOD323
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX384-A3V6-QX |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 300MW SOD323
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 300MW SOD323
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 1356 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.49 EUR |
| 23+ | 0.92 EUR |
| 50+ | 0.67 EUR |
| 100+ | 0.6 EUR |
| BZX384-A5V6-QX |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 300MW SOD323
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 300MW SOD323
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.3 EUR |
| BZX384-A5V6-QX |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 300MW SOD323
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 300MW SOD323
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 5390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.32 EUR |
| 26+ | 0.81 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.36 EUR |
| 74HCT164DB,112 |
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auf Bestellung 11622 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 321+ | 1.67 EUR |
| PZU4.7B,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q100
Description: DIODE ZENER 4.7V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PZU4.7B,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 310MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q100
Description: DIODE ZENER 4.7V 310MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCX18,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 25V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS PNP 25V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCX18,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 25V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
Qualification: AEC-Q101
Description: TRANS PNP 25V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 2347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 81+ | 0.26 EUR |
| 131+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| PUMB2F |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V 6-TSSOP
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 50V 6-TSSOP
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 110000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4537+ | 0.13 EUR |
| BZT52-B30X |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 590MW SOD123
Tolerance: ±2%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 590 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Qualification: AEC-Q101
Description: DIODE ZENER 30V 590MW SOD123
Tolerance: ±2%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 590 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Qualification: AEC-Q101
auf Bestellung 72980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13172+ | 0.037 EUR |
| BZX884-C16,315 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 16V 250MW DFN1006-2
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006-2
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
Description: DIODE ZENER 16V 250MW DFN1006-2
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006-2
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZX884-C16,315 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 16V 250MW DFN1006-2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006-2
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
Description: DIODE ZENER 16V 250MW DFN1006-2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006-2
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
auf Bestellung 3869 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 0.31 EUR |
| 98+ | 0.21 EUR |
| 241+ | 0.087 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.08 EUR |
| 2000+ | 0.079 EUR |
| 74HC00DB,112 |
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auf Bestellung 4785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 478+ | 1.13 EUR |
| PMEG2015EV,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 1.5A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOT-666
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Description: DIODE SCHOTTKY 20V 1.5A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SOT-666
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH





























