Produkte > NTE ELECTRONICS > Alle Produkte des Herstellers NTE ELECTRONICS (1706) > Seite 10 nach 29
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTE290 | NTE Electronics |
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auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2902 | NTE Electronics |
![]() Description: Transistor: N-JFET; unipolar; 25V; 60mA; 0.35W; TO92; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60mA Power dissipation: 0.35W Case: TO92 Gate-source voltage: -25V Mounting: THT Kind of package: bulk Gate current: 10mA |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2902 | NTE Electronics |
![]() Description: Transistor: N-JFET; unipolar; 25V; 60mA; 0.35W; TO92; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60mA Power dissipation: 0.35W Case: TO92 Gate-source voltage: -25V Mounting: THT Kind of package: bulk Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 55 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2903 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 35W; TO220FN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 35W Case: TO220FN Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2903 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 35W; TO220FN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 35W Case: TO220FN Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2905 | NTE Electronics |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; Idm: -48A; 150W; TO247 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.5A Pulsed drain current: -48A Power dissipation: 150W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2905 | NTE ELECTRONICS |
![]() Transistormontage: Through Hole Drain-Source-Spannung Vds: 200 Dauer-Drainstrom Id: 12 Qualifikation: - Verlustleistung Pd: 150 Gate-Source-Schwellenspannung, max.: 2 Verlustleistung: 150 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: P Channel Kanaltyp: P Channel Betriebswiderstand, Rds(on): 0.5 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.5 SVHC: To Be Advised |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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NTE2905 | NTE Electronics |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; Idm: -48A; 150W; TO247 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.5A Pulsed drain current: -48A Power dissipation: 150W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2909 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 230A Power dissipation: 200W Case: TO220 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: THT Kind of channel: enhancement |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2909 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 230A Power dissipation: 200W Case: TO220 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE290A | NTE ELECTRONICS |
![]() Transistormontage: Through Hole DC-Stromverstärkung hFE: 200 MSL: MSL 1 - Unlimited Verlustleistung Pd: 600 Übergangsfrequenz ft: 120 Bauform - Transistor: TO-92 Kollektor-Emitter-Spannung V(br)ceo: 80 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: PNP DC-Kollektorstrom: 500 Betriebstemperatur, max.: 150 SVHC: No SVHC (16-Jul-2019) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
NTE291 | NTE Electronics |
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auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2912 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 58A; Idm: 280A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 58A Pulsed drain current: 280A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2912 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 58A; Idm: 280A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 58A Pulsed drain current: 280A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2913 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Pulsed drain current: 390A Power dissipation: 200W Case: TO247 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of channel: enhancement |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2913 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Pulsed drain current: 390A Power dissipation: 200W Case: TO247 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2914 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 25W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 25W Case: TO220F Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: THT Kind of channel: enhancement |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2914 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 25W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 25W Case: TO220F Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2916 | NTE Electronics | NTE2916 THT N channel transistors |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2917 | NTE Electronics |
![]() Description: Transistor: N-JFET; unipolar; 20V; 10mA; 0.1W; TO92S; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 10mA Case: TO92S Gate-source voltage: -20V Mounting: THT Kind of package: bulk Power dissipation: 0.1W Gate current: 10mA |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2917 | NTE Electronics |
![]() Description: Transistor: N-JFET; unipolar; 20V; 10mA; 0.1W; TO92S; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 10mA Case: TO92S Gate-source voltage: -20V Mounting: THT Kind of package: bulk Power dissipation: 0.1W Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2919 | NTE Electronics |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 25W; TO220F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -20A Pulsed drain current: -80A Power dissipation: 25W Case: TO220F Gate-source voltage: ±20V On-state resistance: 92mΩ Mounting: THT Kind of channel: enhancement Version: ESD |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2919 | NTE Electronics |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 25W; TO220F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -20A Pulsed drain current: -80A Power dissipation: 25W Case: TO220F Gate-source voltage: ±20V On-state resistance: 92mΩ Mounting: THT Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2920 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 64A; Idm: 360A; 230W; TO247 Case: TO247 Drain-source voltage: 60V Drain current: 64A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 360A Mounting: THT |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2920 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 64A; Idm: 360A; 230W; TO247 Case: TO247 Drain-source voltage: 60V Drain current: 64A On-state resistance: 14mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 360A Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2926 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 160V; 7A; 100W; TO3PN; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 160V Drain current: 7A Power dissipation: 100W Case: TO3PN Gate-source voltage: ±15V Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2926 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 160V; 7A; 100W; TO3PN; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 160V Drain current: 7A Power dissipation: 100W Case: TO3PN Gate-source voltage: ±15V Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2929 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 15A; 45W; TO220F; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Pulsed drain current: 15A Power dissipation: 45W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of channel: enhancement Version: ESD |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2929 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 15A; 45W; TO220F; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Pulsed drain current: 15A Power dissipation: 45W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2939 | NTE Electronics | NTE2939 THT N channel transistors |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2942 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 56A; 35W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.8A Pulsed drain current: 56A Power dissipation: 35W Case: TO220F Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2942 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 56A; 35W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.8A Pulsed drain current: 56A Power dissipation: 35W Case: TO220F Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2947 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; Idm: 72A; 235W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Pulsed drain current: 72A Power dissipation: 235W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2947 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; Idm: 72A; 235W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Pulsed drain current: 72A Power dissipation: 235W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2953 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 49.7A; Idm: 281A; 63.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 49.7A Pulsed drain current: 281A Power dissipation: 63.8W Case: TO220FN Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: THT Kind of channel: enhancement |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2953 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 49.7A; Idm: 281A; 63.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 49.7A Pulsed drain current: 281A Power dissipation: 63.8W Case: TO220FN Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2957 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 5A; Idm: 15A; 30W; TO220FN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 5A Pulsed drain current: 15A Power dissipation: 30W Case: TO220FN Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2957 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 5A; Idm: 15A; 30W; TO220FN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 5A Pulsed drain current: 15A Power dissipation: 30W Case: TO220FN Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2967 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 150W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 280A Power dissipation: 150W Case: TO3P Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Kind of channel: enhancement |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2967 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 150W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 70A Pulsed drain current: 280A Power dissipation: 150W Case: TO3P Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE297 | NTE Electronics |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 1W Case: TO92 Current gain: 50...330 Mounting: THT Frequency: 120MHz |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE297 | NTE Electronics |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 1W Case: TO92 Current gain: 50...330 Mounting: THT Frequency: 120MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2973 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P Case: TO3P Drain-source voltage: 900V Drain current: 14A On-state resistance: 0.63Ω Type of transistor: N-MOSFET Power dissipation: 275W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 42A Mounting: THT |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2973 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P Case: TO3P Drain-source voltage: 900V Drain current: 14A On-state resistance: 0.63Ω Type of transistor: N-MOSFET Power dissipation: 275W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 42A Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2974 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 35W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 24A Power dissipation: 35W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2974 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 35W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 24A Power dissipation: 35W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2975 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 37A; Idm: 180A; 107W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 37A Pulsed drain current: 180A Power dissipation: 107W Case: TO220 Gate-source voltage: ±20V On-state resistance: 16Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2975 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 37A; Idm: 180A; 107W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 37A Pulsed drain current: 180A Power dissipation: 107W Case: TO220 Gate-source voltage: ±20V On-state resistance: 16Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2984 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 68A Power dissipation: 60W Case: TO220 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2984 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 68A Power dissipation: 60W Case: TO220 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2986 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 200A Power dissipation: 150W Case: TO220 Gate-source voltage: ±10V On-state resistance: 39mΩ Mounting: THT Kind of channel: enhancement |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2986 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 200A Power dissipation: 150W Case: TO220 Gate-source voltage: ±10V On-state resistance: 39mΩ Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2987 | NTE Electronics |
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auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2989 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 50W; TO220FN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 36A Power dissipation: 50W Case: TO220FN Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2989 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 50W; TO220FN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 36A Power dissipation: 50W Case: TO220FN Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2993 | NTE Electronics | NTE2993 THT N channel transistors |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2994 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 450V; 10A; Idm: 40A; 50W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 450V Drain current: 10A Pulsed drain current: 40A Power dissipation: 50W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2994 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 450V; 10A; Idm: 40A; 50W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 450V Drain current: 10A Pulsed drain current: 40A Power dissipation: 50W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2995 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 115W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of channel: enhancement Version: ESD |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2995 | NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 115W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE290 |
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Hersteller: NTE Electronics
NTE290 PNP THT transistors
NTE290 PNP THT transistors
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 7.95 EUR |
15+ | 4.76 EUR |
25+ | 2.86 EUR |
39+ | 1.83 EUR |
NTE2902 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 0.35W; TO92; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: -25V
Mounting: THT
Kind of package: bulk
Gate current: 10mA
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 0.35W; TO92; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: -25V
Mounting: THT
Kind of package: bulk
Gate current: 10mA
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.05 EUR |
16+ | 4.55 EUR |
17+ | 4.23 EUR |
18+ | 4.20 EUR |
25+ | 4.09 EUR |
NTE2902 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 0.35W; TO92; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: -25V
Mounting: THT
Kind of package: bulk
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 0.35W; TO92; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: -25V
Mounting: THT
Kind of package: bulk
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.05 EUR |
16+ | 4.55 EUR |
17+ | 4.23 EUR |
18+ | 4.20 EUR |
25+ | 4.09 EUR |
NTE2903 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 35W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 35W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 35W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 35W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
NTE2903 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 35W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 35W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 35W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 35W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
3+ | 23.84 EUR |
6+ | 11.91 EUR |
15+ | 4.76 EUR |
25+ | 2.86 EUR |
NTE2905 |
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Hersteller: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; Idm: -48A; 150W; TO247
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Pulsed drain current: -48A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; Idm: -48A; 150W; TO247
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Pulsed drain current: -48A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.56 EUR |
15+ | 5.02 EUR |
17+ | 4.42 EUR |
18+ | 4.18 EUR |
25+ | 4.00 EUR |
NTE2905 |
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Hersteller: NTE ELECTRONICS
Description: NTE ELECTRONICS - NTE2905 - MOSFET, P CHANNEL, -200V, 0.5OHM, -12A,
Transistormontage: Through Hole
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 12
Qualifikation: -
Verlustleistung Pd: 150
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 150
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: P Channel
Kanaltyp: P Channel
Betriebswiderstand, Rds(on): 0.5
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.5
SVHC: To Be Advised
Description: NTE ELECTRONICS - NTE2905 - MOSFET, P CHANNEL, -200V, 0.5OHM, -12A,
Transistormontage: Through Hole
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 12
Qualifikation: -
Verlustleistung Pd: 150
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 150
Bauform - Transistor: TO-247
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: P Channel
Kanaltyp: P Channel
Betriebswiderstand, Rds(on): 0.5
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.5
SVHC: To Be Advised
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTE2905 |
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Hersteller: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; Idm: -48A; 150W; TO247
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Pulsed drain current: -48A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; Idm: -48A; 150W; TO247
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Pulsed drain current: -48A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.56 EUR |
15+ | 5.02 EUR |
17+ | 4.42 EUR |
18+ | 4.18 EUR |
25+ | 4.00 EUR |
NTE2909 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
NTE2909 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
25+ | 2.86 EUR |
NTE290A |
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Hersteller: NTE ELECTRONICS
Description: NTE ELECTRONICS - NTE290A - BIPOLAR TRANSISTOR, PNP, -80V TO-92
Transistormontage: Through Hole
DC-Stromverstärkung hFE: 200
MSL: MSL 1 - Unlimited
Verlustleistung Pd: 600
Übergangsfrequenz ft: 120
Bauform - Transistor: TO-92
Kollektor-Emitter-Spannung V(br)ceo: 80
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: PNP
DC-Kollektorstrom: 500
Betriebstemperatur, max.: 150
SVHC: No SVHC (16-Jul-2019)
Description: NTE ELECTRONICS - NTE290A - BIPOLAR TRANSISTOR, PNP, -80V TO-92
Transistormontage: Through Hole
DC-Stromverstärkung hFE: 200
MSL: MSL 1 - Unlimited
Verlustleistung Pd: 600
Übergangsfrequenz ft: 120
Bauform - Transistor: TO-92
Kollektor-Emitter-Spannung V(br)ceo: 80
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: PNP
DC-Kollektorstrom: 500
Betriebstemperatur, max.: 150
SVHC: No SVHC (16-Jul-2019)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTE291 |
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Hersteller: NTE Electronics
NTE291 NPN THT transistors
NTE291 NPN THT transistors
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.58 EUR |
22+ | 3.25 EUR |
25+ | 2.86 EUR |
NTE2912 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; Idm: 280A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 58A
Pulsed drain current: 280A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; Idm: 280A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 58A
Pulsed drain current: 280A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
NTE2912 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; Idm: 280A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 58A
Pulsed drain current: 280A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; Idm: 280A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 58A
Pulsed drain current: 280A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
3+ | 23.84 EUR |
5+ | 14.30 EUR |
12+ | 5.96 EUR |
25+ | 3.55 EUR |
NTE2913 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
NTE2913 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
9+ | 7.95 EUR |
25+ | 4.69 EUR |
NTE2914 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.51 EUR |
NTE2914 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.51 EUR |
NTE2916 |
Hersteller: NTE Electronics
NTE2916 THT N channel transistors
NTE2916 THT N channel transistors
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
5+ | 14.30 EUR |
25+ | 10.27 EUR |
NTE2917 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20V; 10mA; 0.1W; TO92S; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10mA
Case: TO92S
Gate-source voltage: -20V
Mounting: THT
Kind of package: bulk
Power dissipation: 0.1W
Gate current: 10mA
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20V; 10mA; 0.1W; TO92S; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10mA
Case: TO92S
Gate-source voltage: -20V
Mounting: THT
Kind of package: bulk
Power dissipation: 0.1W
Gate current: 10mA
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
NTE2917 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20V; 10mA; 0.1W; TO92S; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10mA
Case: TO92S
Gate-source voltage: -20V
Mounting: THT
Kind of package: bulk
Power dissipation: 0.1W
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20V; 10mA; 0.1W; TO92S; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10mA
Case: TO92S
Gate-source voltage: -20V
Mounting: THT
Kind of package: bulk
Power dissipation: 0.1W
Gate current: 10mA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
10+ | 7.15 EUR |
25+ | 2.86 EUR |
NTE2919 |
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Hersteller: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 25W; TO220F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 92mΩ
Mounting: THT
Kind of channel: enhancement
Version: ESD
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 25W; TO220F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 92mΩ
Mounting: THT
Kind of channel: enhancement
Version: ESD
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.94 EUR |
NTE2919 |
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Hersteller: NTE Electronics
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 25W; TO220F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 92mΩ
Mounting: THT
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 25W; TO220F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 92mΩ
Mounting: THT
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.94 EUR |
25+ | 5.73 EUR |
NTE2920 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; Idm: 360A; 230W; TO247
Case: TO247
Drain-source voltage: 60V
Drain current: 64A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 360A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; Idm: 360A; 230W; TO247
Case: TO247
Drain-source voltage: 60V
Drain current: 64A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 360A
Mounting: THT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
NTE2920 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; Idm: 360A; 230W; TO247
Case: TO247
Drain-source voltage: 60V
Drain current: 64A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 360A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; Idm: 360A; 230W; TO247
Case: TO247
Drain-source voltage: 60V
Drain current: 64A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 360A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
2+ | 35.75 EUR |
4+ | 17.88 EUR |
25+ | 11.94 EUR |
NTE2926 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 160V; 7A; 100W; TO3PN; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 160V
Drain current: 7A
Power dissipation: 100W
Case: TO3PN
Gate-source voltage: ±15V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 160V; 7A; 100W; TO3PN; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 160V
Drain current: 7A
Power dissipation: 100W
Case: TO3PN
Gate-source voltage: ±15V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
NTE2926 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 160V; 7A; 100W; TO3PN; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 160V
Drain current: 7A
Power dissipation: 100W
Case: TO3PN
Gate-source voltage: ±15V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 160V; 7A; 100W; TO3PN; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 160V
Drain current: 7A
Power dissipation: 100W
Case: TO3PN
Gate-source voltage: ±15V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
3+ | 23.84 EUR |
NTE2929 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 15A; 45W; TO220F; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 15A; 45W; TO220F; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.92 EUR |
10+ | 7.35 EUR |
11+ | 6.95 EUR |
NTE2929 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 15A; 45W; TO220F; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 15A; 45W; TO220F; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.92 EUR |
10+ | 7.35 EUR |
11+ | 6.95 EUR |
25+ | 6.69 EUR |
NTE2939 |
Hersteller: NTE Electronics
NTE2939 THT N channel transistors
NTE2939 THT N channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
5+ | 14.30 EUR |
12+ | 5.96 EUR |
25+ | 4.03 EUR |
NTE2942 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 56A; 35W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 56A; 35W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
24+ | 3.03 EUR |
27+ | 2.67 EUR |
29+ | 2.46 EUR |
NTE2942 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 56A; 35W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 56A; 35W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
24+ | 3.03 EUR |
27+ | 2.67 EUR |
29+ | 2.46 EUR |
NTE2947 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; Idm: 72A; 235W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Pulsed drain current: 72A
Power dissipation: 235W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; Idm: 72A; 235W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Pulsed drain current: 72A
Power dissipation: 235W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
NTE2947 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; Idm: 72A; 235W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Pulsed drain current: 72A
Power dissipation: 235W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; Idm: 72A; 235W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Pulsed drain current: 72A
Power dissipation: 235W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
25+ | 5.08 EUR |
NTE2953 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49.7A; Idm: 281A; 63.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49.7A
Pulsed drain current: 281A
Power dissipation: 63.8W
Case: TO220FN
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49.7A; Idm: 281A; 63.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49.7A
Pulsed drain current: 281A
Power dissipation: 63.8W
Case: TO220FN
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.90 EUR |
8+ | 9.41 EUR |
9+ | 8.89 EUR |
10+ | 8.67 EUR |
NTE2953 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49.7A; Idm: 281A; 63.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49.7A
Pulsed drain current: 281A
Power dissipation: 63.8W
Case: TO220FN
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49.7A; Idm: 281A; 63.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49.7A
Pulsed drain current: 281A
Power dissipation: 63.8W
Case: TO220FN
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.90 EUR |
8+ | 9.41 EUR |
9+ | 8.89 EUR |
10+ | 8.67 EUR |
25+ | 8.55 EUR |
NTE2957 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; Idm: 15A; 30W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 30W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; Idm: 15A; 30W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 30W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.11 EUR |
NTE2957 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; Idm: 15A; 30W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 30W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; Idm: 15A; 30W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Pulsed drain current: 15A
Power dissipation: 30W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.11 EUR |
16+ | 4.46 EUR |
NTE2967 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 150W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 150W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 150W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 150W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
NTE2967 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 150W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 150W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 150W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 150W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
5+ | 14.30 EUR |
NTE297 |
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Hersteller: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Current gain: 50...330
Mounting: THT
Frequency: 120MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Current gain: 50...330
Mounting: THT
Frequency: 120MHz
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
NTE297 |
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Hersteller: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Current gain: 50...330
Mounting: THT
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 1W
Case: TO92
Current gain: 50...330
Mounting: THT
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
9+ | 7.95 EUR |
23+ | 3.10 EUR |
25+ | 2.86 EUR |
NTE2973 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P
Case: TO3P
Drain-source voltage: 900V
Drain current: 14A
On-state resistance: 0.63Ω
Type of transistor: N-MOSFET
Power dissipation: 275W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 42A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P
Case: TO3P
Drain-source voltage: 900V
Drain current: 14A
On-state resistance: 0.63Ω
Type of transistor: N-MOSFET
Power dissipation: 275W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 42A
Mounting: THT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
NTE2973 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P
Case: TO3P
Drain-source voltage: 900V
Drain current: 14A
On-state resistance: 0.63Ω
Type of transistor: N-MOSFET
Power dissipation: 275W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 42A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P
Case: TO3P
Drain-source voltage: 900V
Drain current: 14A
On-state resistance: 0.63Ω
Type of transistor: N-MOSFET
Power dissipation: 275W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 42A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
3+ | 23.84 EUR |
25+ | 15.60 EUR |
NTE2974 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 35W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 35W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 35W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 35W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.79 EUR |
12+ | 6.22 EUR |
13+ | 5.89 EUR |
NTE2974 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 35W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 35W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 35W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 35W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.79 EUR |
12+ | 6.22 EUR |
13+ | 5.89 EUR |
25+ | 5.66 EUR |
NTE2975 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; Idm: 180A; 107W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 107W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 16Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; Idm: 180A; 107W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 107W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 16Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.62 EUR |
15+ | 5.06 EUR |
16+ | 4.46 EUR |
NTE2975 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; Idm: 180A; 107W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 107W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 16Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; Idm: 180A; 107W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Pulsed drain current: 180A
Power dissipation: 107W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 16Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.62 EUR |
15+ | 5.06 EUR |
16+ | 4.46 EUR |
25+ | 4.02 EUR |
NTE2984 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.76 EUR |
NTE2984 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.76 EUR |
25+ | 2.90 EUR |
NTE2986 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
NTE2986 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220
Gate-source voltage: ±10V
On-state resistance: 39mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
11+ | 6.51 EUR |
NTE2987 |
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Hersteller: NTE Electronics
NTE2987 THT N channel transistors
NTE2987 THT N channel transistors
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.43 EUR |
21+ | 3.55 EUR |
22+ | 3.35 EUR |
NTE2989 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 50W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 50W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 50W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 50W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
NTE2989 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 50W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 50W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 36A; 50W; TO220FN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 50W
Case: TO220FN
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 35.75 EUR |
5+ | 14.30 EUR |
NTE2993 |
Hersteller: NTE Electronics
NTE2993 THT N channel transistors
NTE2993 THT N channel transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 49.64 EUR |
3+ | 30.42 EUR |
NTE2994 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 10A; Idm: 40A; 50W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 10A; Idm: 40A; 50W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
NTE2994 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 10A; Idm: 40A; 50W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 10A; Idm: 40A; 50W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 450V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
3+ | 23.84 EUR |
8+ | 8.94 EUR |
NTE2995 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 115W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 115W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
NTE2995 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 115W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 115W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.30 EUR |
8+ | 8.94 EUR |
25+ | 5.33 EUR |