| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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,TO-226_straightlead.jpg "2N3416") |
2N3416 | onsemi |
 Description: TRANS NPN 50V 0.5A TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 2mA, 4.5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FDMC8622-L701 | onsemi |
Description: IC Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DFB2010 | onsemi |
Description: BRIDGE RECT 1P 100V 20A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
auf Bestellung 1186 Stücke: Lieferzeit 10-14 Tag (e) |
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DFB2505 | onsemi |
Description: BRIDGE RECT 1PHASE 50V 25A TS-6P Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 50 V Supplier Device Package: TS-6P Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube |
auf Bestellung 1182 Stücke: Lieferzeit 10-14 Tag (e) |
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MBRS360T3 | onsemi |
 Description: DIODE SCHOTTKY 60V 4A SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: SMC Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TIP110 | onsemi |
Description: TRANS NPN DARL 60V 2A TO-220 Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TO-220 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Current - Collector Cutoff (Max): 2mA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NVD6416ANT4G-VF01 | onsemi |
Description: MOSFET N-CH 100V 17A DPAK Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FDC013P20L | onsemi |
Description: MOSFET P-CH 20V TSOT23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDC013P20L | onsemi |
Description: MOSFET P-CH 20V TSOT23-6 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NTMFS5C404NLT3G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMFS5C404NLT3G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMFS5C404NLTT3G | onsemi |
Description: MOSFET N-CH 40V 5DFN Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 370A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMFS5C404NLTT3G | onsemi |
Description: MOSFET N-CH 40V 5DFN Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 370A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMFS5C404NLTT1G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTMFS5C404NLTT1G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFN Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CAT24C64WGE | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1376 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT24C64YGI | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8MSOP DigiKey Programmable: Not Verified Memory Organization: 8K x 8 Access Time: 400 ns Memory Interface: I²C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CAT3606HV4-T2 | onsemi |
Description: IC LED DRVR WHITE BCKLGT 16-TQFN Packaging: Tape & Reel (TR) Package / Case: 16-WQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 6 Frequency: 800kHz ~ 1.3MHz Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 30mA Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (4x4) Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CAT3606HV4-T2 | onsemi |
Description: IC LED DRVR WHITE BCKLGT 16-TQFN Packaging: Cut Tape (CT) Package / Case: 16-WQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 6 Frequency: 800kHz ~ 1.3MHz Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 30mA Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (4x4) Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NVMFS5C404NLWFET1G | onsemi |
Description: T6-40V N 0.67 MOHMS LL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NVMFS5C404NLWFET1G | onsemi |
Description: T6-40V N 0.67 MOHMS LL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C404NWFET1G | onsemi |
Description: T6-40V N 0.7 MOHMS SL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7480 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C404NAFT1G | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NVMFS5C404NAFT1G | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NVMFS5C404NWFT1G-M | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NVMFS5C404NWFT3G-K | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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NVMFS5C404NWFT1G-K | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| LV8402GP-H | onsemi |
Description: IC MOTOR DRIVER 2.8V-5.5V 24VCT Motor Type - AC, DC: Brushed DC Supplier Device Package: 24-VCT (3.5x3.5) Voltage - Load: 1.5V ~ 15V Technology: Bi-CMOS Applications: General Purpose Voltage - Supply: 2.8V ~ 5.5V Output Configuration: Half Bridge (4) Operating Temperature: -30°C ~ 85°C (TA) Interface: Parallel Current - Output: 1.4A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 24-WFQFN Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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LV8402V-MPB-E | onsemi |
Description: IC MOTOR DRIVER 2.8V-5.5V 16SSOP Motor Type - AC, DC: Brushed DC Supplier Device Package: 16-SSOP Voltage - Load: 1.5V ~ 15V Technology: Bi-CMOS Applications: General Purpose Voltage - Supply: 2.8V ~ 5.5V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 85°C (TA) Interface: Parallel Packaging: Tube Mounting Type: Surface Mount Package / Case: 16-LSSOP (0.173", 4.40mm Width) Current - Output: 1.4A Function: Driver - Fully Integrated, Control and Power Stage |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CAT25C128V-1.8-26604T3 | onsemi |
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC DigiKey Programmable: Not Verified Memory Organization: 16K x 8 Access Time: 80 ns Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 5 MHz Technology: EEPROM Voltage - Supply: 1.8V ~ 6V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Non-Volatile Memory Size: 128Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT25C128V-1.8-26604 | onsemi |
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC Access Time: 80 ns Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 5 MHz Technology: EEPROM Voltage - Supply: 1.8V ~ 6V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Non-Volatile Memory Size: 128Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk DigiKey Programmable: Not Verified Memory Organization: 16K x 8 |
auf Bestellung 11423 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRV660VCTT4G | onsemi |
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DPAK Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SBRV660VCTT4G | onsemi |
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DPAK Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SBR660CTT4G | onsemi |
Description: DIODE SCHOTTKY 60V 6A DPAK Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DPAK Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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LM350TG | onsemi |
Description: IC REG LINEAR POS ADJ 3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 3A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Max): 33V Voltage - Output (Min/Fixed): 1.2V PSRR: 65dB ~ 80dB (120Hz) Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDS9431A-F085CT | onsemi |
Description: P-CHANNEL 2.5V SPECIFIED MOSFET, FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AR1335CSSC11SMKA0-CR | onsemi |
Description: IMAGE SENSOR 13MP 1/3 CIS SO Frames per Second: 30 Supplier Device Package: 63-ODCSP (6.29x5.69) Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm Voltage - Supply: 1.8V, 2.8V Type: CMOS Package / Case: 63-WFBGA, CSPBGA Packaging: Tray |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AR1335HSSC11SMAA0-DPBR | onsemi |
Description: IMAGE SENSOR 13MP 1/3 CIS SO Frames per Second: 30 Supplier Device Package: 48-CLCC (10x10) Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm Voltage - Supply: 1.8V, 2.8V Type: CMOS Package / Case: 48-LCC Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AR1335CSSC11SMKA0-CP1 | onsemi |
Description: IMAGE SENSOR 13MP 1/3 CIS SO Package / Case: 63-WFBGA, CSPBGA Packaging: Bulk Frames per Second: 30 Supplier Device Package: 63-ODCSP (6.29x5.69) Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm Voltage - Supply: 1.8V, 2.8V Type: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AR1335CSSC11SMKA0-CP1 | onsemi |
Description: IMAGE SENSOR 13MP 1/3 CIS SO Frames per Second: 30 Supplier Device Package: 63-ODCSP (6.29x5.69) Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm Voltage - Supply: 1.8V, 2.8V Type: CMOS Package / Case: 63-WFBGA, CSPBGA Packaging: Tray |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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| AR1335CSSC32SMD20-HW | onsemi |
Description: IC IMAGE SENSOR 13 MP Frames per Second: 30 Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -30°C ~ 70°C (TJ) Type: CMOS Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AR1335PDSC32SMD10 | onsemi |
Description: IC IMAGE SENSOR 13 MP Frames per Second: 30 Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -30°C ~ 70°C (TJ) Type: CMOS Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AR1335PDSC32SMD20 | onsemi |
Description: IMAGE SENSOR Frames per Second: 30 Supplier Device Package: Die Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -30°C ~ 70°C (TJ) Type: CMOS Package / Case: Die Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AR1335CSSM11SMKA0-CP1 | onsemi |
Description: 13MP 1/3 CIS SO Frames per Second: 30 Supplier Device Package: 63-ODCSP (6.29x5.69) Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm Voltage - Supply: 1.2V Type: CMOS Package / Case: 63-WFBGA, CSPBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AR1335CSSM32SMD20 | onsemi |
Description: AR1335CSSM32SMD20 Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -30°C ~ 70°C (TJ) Type: CMOS Package / Case: Die Packaging: Bulk Frames per Second: 30 Supplier Device Package: Die Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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74ACT245SC_NL | onsemi |
Description: IC TXRX 4.5V/5.5V 20-SOIC Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1080 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBV3401LT3G | onsemi |
Description: RF DIODE PIN 35V 200MW SOT-23-3 Power Dissipation (Max): 200 mW Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 35V Resistance @ If, F: 700mOhm @ 10mA, 100MHz Capacitance @ Vr, F: 1pF @ 20V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - Single Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBV3401LT1 | onsemi |
Description: RF DIODE PIN 35V 200MW SOT-23-3 Power Dissipation (Max): 200 mW Supplier Device Package: SOT-23-3 (TO-236) Voltage - Peak Reverse (Max): 35V Resistance @ If, F: 700mOhm @ 10mA, 100MHz Capacitance @ Vr, F: 1pF @ 20V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - Single Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBV3401LT1 | onsemi |
Description: RF DIODE PIN 35V 200MW SOT-23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 1pF @ 20V, 1MHz Resistance @ If, F: 700mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 200 mW |
auf Bestellung 44388 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBV3401LT1G | onsemi |
Description: RF DIODE PIN 35V 200MW SOT-23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 1pF @ 20V, 1MHz Resistance @ If, F: 700mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 200 mW |
auf Bestellung 372671 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBV3401LT3 | onsemi |
Description: DIODE PIN SWITCHING 35V SOT-23 Packaging: Bulk |
auf Bestellung 580000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1360BABCYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Power (Watts): 20 W Voltage - Start Up: 18 V Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit Supplier Device Package: 6-TSOP Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 80kHz Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP1360BABCYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Power (Watts): 20 W Voltage - Start Up: 18 V Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit Supplier Device Package: 6-TSOP Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 80kHz Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1360BACCYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Power (Watts): 20 W Voltage - Start Up: 18 V Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit Supplier Device Package: 6-TSOP Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 110kHz Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1360BACCYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Power (Watts): 20 W Voltage - Start Up: 18 V Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit Supplier Device Package: 6-TSOP Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 110kHz Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| S29GL512S11TFB020 | onsemi |
Description: S29GL5512-MB(MBYTE3.0GLFLAMEMORY Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| S29GL512T11DHV013 | onsemi |
Description: S29GL5512-MB(MBYTE3.0GLECLIPFLAM Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| S29GL512T10DHI013 | onsemi |
Description: S29GL5512-MB(MBYTE3.0GLECLIPFLAM Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCP152MX280120TCG | onsemi |
Description: IC REG LINEAR 1.2V/2.8V 6-XDFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 6-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.2V, 2.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): -, 0.26V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP152MX280120TCG | onsemi |
Description: IC REG LINEAR 1.2V/2.8V 6-XDFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 6-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.2V, 2.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): -, 0.26V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA |
auf Bestellung 39490 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N3416 |
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Hersteller: onsemi
Description: TRANS NPN 50V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 2mA, 4.5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TRANS NPN 50V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 2mA, 4.5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DFB2010 |
|
Hersteller: onsemi
Description: BRIDGE RECT 1P 100V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1P 100V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 1186 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.12 EUR |
| 15+ | 4.34 EUR |
| 60+ | 3.5 EUR |
| 105+ | 3.22 EUR |
| 510+ | 2.64 EUR |
| DFB2505 |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 50V 25A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Description: BRIDGE RECT 1PHASE 50V 25A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
auf Bestellung 1182 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.82 EUR |
| 15+ | 2.92 EUR |
| 105+ | 2.84 EUR |
| 510+ | 2.71 EUR |
| 1005+ | 2.63 EUR |
| MBRS360T3 |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 4A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 4A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TIP110 |
|
Hersteller: onsemi
Description: TRANS NPN DARL 60V 2A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN DARL 60V 2A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVD6416ANT4G-VF01 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 17A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 17A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDC013P20L |
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5C404NLT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5C404NLT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5C404NLTT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5C404NLTT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 5DFN
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Description: MOSFET N-CH 40V 5DFN
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5C404NLTT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5C404NLTT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Description: MOSFET N-CH 40V 52A/370A 5DFN
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C64WGE |
|
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1376 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 649+ | 0.84 EUR |
| CAT24C64YGI |
|
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 400 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Bulk
Description: IC EEPROM 64KBIT I2C 1MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 400 ns
Memory Interface: I²C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT3606HV4-T2 |
|
Hersteller: onsemi
Description: IC LED DRVR WHITE BCKLGT 16-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 800kHz ~ 1.3MHz
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR WHITE BCKLGT 16-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 800kHz ~ 1.3MHz
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT3606HV4-T2 |
|
Hersteller: onsemi
Description: IC LED DRVR WHITE BCKLGT 16-TQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 800kHz ~ 1.3MHz
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR WHITE BCKLGT 16-TQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 800kHz ~ 1.3MHz
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C404NLWFET1G |
|
Hersteller: onsemi
Description: T6-40V N 0.67 MOHMS LL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 0.67 MOHMS LL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C404NLWFET1G |
|
Hersteller: onsemi
Description: T6-40V N 0.67 MOHMS LL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 0.67 MOHMS LL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.22 EUR |
| 10+ | 7.53 EUR |
| 100+ | 5.45 EUR |
| 500+ | 5.44 EUR |
| NVMFS5C404NWFET1G |
|
Hersteller: onsemi
Description: T6-40V N 0.7 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 0.7 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.6 EUR |
| 10+ | 7.81 EUR |
| 100+ | 5.68 EUR |
| NVMFS5C404NAFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 53A/378A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C404NAFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 53A/378A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NVMFS5C404NWFT1G-M |
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Description: MOSFET N-CH 40V 53A/378A 5DFN
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Produkt ist nicht verfügbar
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| NVMFS5C404NWFT3G-K |
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 53A/378A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NVMFS5C404NWFT1G-K |
Hersteller: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 53A/378A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| LV8402GP-H |
Hersteller: onsemi
Description: IC MOTOR DRIVER 2.8V-5.5V 24VCT
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 24-VCT (3.5x3.5)
Voltage - Load: 1.5V ~ 15V
Technology: Bi-CMOS
Applications: General Purpose
Voltage - Supply: 2.8V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1.4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-WFQFN
Packaging: Tube
Description: IC MOTOR DRIVER 2.8V-5.5V 24VCT
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 24-VCT (3.5x3.5)
Voltage - Load: 1.5V ~ 15V
Technology: Bi-CMOS
Applications: General Purpose
Voltage - Supply: 2.8V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1.4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-WFQFN
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| LV8402V-MPB-E |
Hersteller: onsemi
Description: IC MOTOR DRIVER 2.8V-5.5V 16SSOP
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 16-SSOP
Voltage - Load: 1.5V ~ 15V
Technology: Bi-CMOS
Applications: General Purpose
Voltage - Supply: 2.8V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Packaging: Tube
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Current - Output: 1.4A
Function: Driver - Fully Integrated, Control and Power Stage
Description: IC MOTOR DRIVER 2.8V-5.5V 16SSOP
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 16-SSOP
Voltage - Load: 1.5V ~ 15V
Technology: Bi-CMOS
Applications: General Purpose
Voltage - Supply: 2.8V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Packaging: Tube
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Current - Output: 1.4A
Function: Driver - Fully Integrated, Control and Power Stage
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CAT25C128V-1.8-26604T3 |
|
Hersteller: onsemi
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Access Time: 80 ns
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Access Time: 80 ns
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2049+ | 0.3 EUR |
| CAT25C128V-1.8-26604 |
|
Hersteller: onsemi
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC
Access Time: 80 ns
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC
Access Time: 80 ns
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 5 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
auf Bestellung 11423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2049+ | 0.29 EUR |
| SBRV660VCTT4G |
|
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SBRV660VCTT4G |
|
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBR660CTT4G |
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 6A DPAK
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 6A DPAK
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| LM350TG |
|
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 33V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB ~ 80dB (120Hz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR POS ADJ 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 33V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB ~ 80dB (120Hz)
Protection Features: Over Current, Over Temperature
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| FDS9431A-F085CT |
|
Hersteller: onsemi
Description: P-CHANNEL 2.5V SPECIFIED MOSFET,
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Description: P-CHANNEL 2.5V SPECIFIED MOSFET,
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR1335CSSC11SMKA0-CR |
|
Hersteller: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Frames per Second: 30
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.8V, 2.8V
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Frames per Second: 30
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.8V, 2.8V
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 23.75 EUR |
| AR1335HSSC11SMAA0-DPBR |
Hersteller: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Frames per Second: 30
Supplier Device Package: 48-CLCC (10x10)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.8V, 2.8V
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Frames per Second: 30
Supplier Device Package: 48-CLCC (10x10)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.8V, 2.8V
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
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| AR1335CSSC11SMKA0-CP1 |
|
Hersteller: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Package / Case: 63-WFBGA, CSPBGA
Packaging: Bulk
Frames per Second: 30
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.8V, 2.8V
Type: CMOS
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Package / Case: 63-WFBGA, CSPBGA
Packaging: Bulk
Frames per Second: 30
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.8V, 2.8V
Type: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR1335CSSC11SMKA0-CP1 |
|
Hersteller: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Frames per Second: 30
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.8V, 2.8V
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Frames per Second: 30
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.8V, 2.8V
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 29.8 EUR |
| AR1335CSSC32SMD20-HW |
Hersteller: onsemi
Description: IC IMAGE SENSOR 13 MP
Frames per Second: 30
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Packaging: Tray
Description: IC IMAGE SENSOR 13 MP
Frames per Second: 30
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Packaging: Tray
Produkt ist nicht verfügbar
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| AR1335PDSC32SMD10 |
Hersteller: onsemi
Description: IC IMAGE SENSOR 13 MP
Frames per Second: 30
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Packaging: Tray
Description: IC IMAGE SENSOR 13 MP
Frames per Second: 30
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR1335PDSC32SMD20 |
Hersteller: onsemi
Description: IMAGE SENSOR
Frames per Second: 30
Supplier Device Package: Die
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Package / Case: Die
Packaging: Tray
Description: IMAGE SENSOR
Frames per Second: 30
Supplier Device Package: Die
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Package / Case: Die
Packaging: Tray
Produkt ist nicht verfügbar
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| AR1335CSSM11SMKA0-CP1 |
Hersteller: onsemi
Description: 13MP 1/3 CIS SO
Frames per Second: 30
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.2V
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
Description: 13MP 1/3 CIS SO
Frames per Second: 30
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Voltage - Supply: 1.2V
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
Produkt ist nicht verfügbar
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| AR1335CSSM32SMD20 |
Hersteller: onsemi
Description: AR1335CSSM32SMD20
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Package / Case: Die
Packaging: Bulk
Frames per Second: 30
Supplier Device Package: Die
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Description: AR1335CSSM32SMD20
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -30°C ~ 70°C (TJ)
Type: CMOS
Package / Case: Die
Packaging: Bulk
Frames per Second: 30
Supplier Device Package: Die
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 74ACT245SC_NL |
|
Hersteller: onsemi
Description: IC TXRX 4.5V/5.5V 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Description: IC TXRX 4.5V/5.5V 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1080 Stücke
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| MMBV3401LT3G |
|
Hersteller: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Power Dissipation (Max): 200 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: RF DIODE PIN 35V 200MW SOT-23-3
Power Dissipation (Max): 200 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2427+ | 0.23 EUR |
| MMBV3401LT1 |
|
Hersteller: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Power Dissipation (Max): 200 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: RF DIODE PIN 35V 200MW SOT-23-3
Power Dissipation (Max): 200 mW
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Peak Reverse (Max): 35V
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MMBV3401LT1 |
|
Hersteller: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
auf Bestellung 44388 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2019+ | 0.27 EUR |
| MMBV3401LT1G |
|
Hersteller: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
auf Bestellung 372671 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 956+ | 0.56 EUR |
| MMBV3401LT3 |
|
auf Bestellung 580000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2019+ | 0.27 EUR |
| NCP1360BABCYSNT1G |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Power (Watts): 20 W
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Supplier Device Package: 6-TSOP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Power (Watts): 20 W
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Supplier Device Package: 6-TSOP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NCP1360BABCYSNT1G |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Power (Watts): 20 W
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Supplier Device Package: 6-TSOP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Power (Watts): 20 W
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Supplier Device Package: 6-TSOP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 80kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.32 EUR |
| 18+ | 1.18 EUR |
| 25+ | 1.11 EUR |
| 100+ | 0.83 EUR |
| 250+ | 0.71 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.51 EUR |
| NCP1360BACCYSNT1G |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Power (Watts): 20 W
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Supplier Device Package: 6-TSOP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 110kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Power (Watts): 20 W
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Supplier Device Package: 6-TSOP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 110kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.48 EUR |
| NCP1360BACCYSNT1G |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Power (Watts): 20 W
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Supplier Device Package: 6-TSOP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 110kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Power (Watts): 20 W
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Supplier Device Package: 6-TSOP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 110kHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.32 EUR |
| 18+ | 1.18 EUR |
| 25+ | 1.11 EUR |
| 100+ | 0.83 EUR |
| 250+ | 0.71 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.51 EUR |
| NCP152MX280120TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.2V/2.8V 6-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 1.2V/2.8V 6-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.48 EUR |
| 10000+ | 0.46 EUR |
| 15000+ | 0.45 EUR |
| NCP152MX280120TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.2V/2.8V 6-XDFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 1.2V/2.8V 6-XDFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
auf Bestellung 39490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.09 EUR |
| 28+ | 0.76 EUR |
| 31+ | 0.68 EUR |
| 100+ | 0.6 EUR |
| 250+ | 0.55 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.51 EUR |
| 2500+ | 0.49 EUR |