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NVMFWS020N06CT1G NVMFWS020N06CT1G onsemi nvmfs020n06c-d.pdf Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
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NVMFWS020N06CT1G NVMFWS020N06CT1G onsemi nvmfs020n06c-d.pdf Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
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10+2.71 EUR
100+1.84 EUR
500+1.46 EUR
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NVMFWS003P03P8ZT1G NVMFWS003P03P8ZT1G onsemi nvmfs003p03p8z-d.pdf Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
auf Bestellung 1466 Stücke:
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NTMFWS1D5N08XT1G NTMFWS1D5N08XT1G onsemi ntmfws1d5n08x-d.pdf Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
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NTMFWS1D5N08XT1G NTMFWS1D5N08XT1G onsemi ntmfws1d5n08x-d.pdf Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Produkt ist nicht verfügbar
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NVMFWS003N10MCT1G NVMFWS003N10MCT1G onsemi nvmfws003n10mc-d.pdf Description: PTNG 100V STD SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
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NVMFWS003N10MCT1G NVMFWS003N10MCT1G onsemi nvmfws003n10mc-d.pdf Description: PTNG 100V STD SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
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NVMFWS002N10MCLT1G NVMFWS002N10MCLT1G onsemi nvmfws002n10mcl-d.pdf Description: PTNG 100V LL SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
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NVMFWS002N10MCLT1G NVMFWS002N10MCLT1G onsemi nvmfws002n10mcl-d.pdf Description: PTNG 100V LL SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
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NZL6V8AXV3T3G NZL6V8AXV3T3G onsemi NZL5V6AXV3T1_Series.pdf Description: TVS DIODE 4.5VWM 7.9VC SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.5V
Supplier Device Package: SC-89-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 7.9V
Power - Peak Pulse: 73W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NZL5V6ATT1G NZL5V6ATT1G onsemi Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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NZL5V6ATT1G NZL5V6ATT1G onsemi Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NZ23C5V6ALT1G NZ23C5V6ALT1G onsemi nz23c5v6al-d.pdf Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Produkt ist nicht verfügbar
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NZ23C5V6ALT1G NZ23C5V6ALT1G onsemi nz23c5v6al-d.pdf Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
auf Bestellung 2528500 Stücke:
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74LVTH16245MTD 74LVTH16245MTD onsemi 74LVT16245, 74LVTH16245.pdf Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
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74LVTH16245MTDX 74LVTH16245MTDX onsemi 74LVT16245, 74LVTH16245.pdf Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
Produkt ist nicht verfügbar
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SMMBZ33VALT1G onsemi Description: TVS DIODES 26VWM 46VC SOT23
Packaging: Tape & Reel (TR)
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SMMBZ33VALT1G onsemi Description: TVS DIODES 26VWM 46VC SOT23
Packaging: Cut Tape (CT)
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23+0.92 EUR
33+0.64 EUR
100+0.32 EUR
500+0.26 EUR
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BZX79C15 BZX79C15 onsemi bzx79c2v4-d.pdf Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
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84+0.25 EUR
118+0.18 EUR
136+0.15 EUR
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NLV74HC138ADTR2G NLV74HC138ADTR2G onsemi mc74hc138a-d.pdf Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
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BC817-40LT1 BC817-40LT1 onsemi bc817-16lt1-d.pdf Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
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MMBD6050LT1 MMBD6050LT1 onsemi mmbd6050lt1-d.pdf Description: DIODE STANDARD 70V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD6050LT3 onsemi mmbd6050lt1-d.pdf Description: DIODE SWITCHING 70V SOT-23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBD6050 MMBD6050 onsemi ONSM-S-A0003587681-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD6050 MMBD6050 onsemi ONSM-S-A0003587681-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD6050 MMBD6050 onsemi ONSM-S-A0003587681-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MC74AC4040D MC74AC4040D onsemi MC74AC4040-D.pdf Description: IC BINARY COUNTER 12-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
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MC74AC4040N MC74AC4040N onsemi MC74AC4040-D.pdf Description: IC BINARY COUNTER 12-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-PDIP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
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MC74AC4040NG MC74AC4040NG onsemi MC74AC4040-D.pdf Description: IC BINARY COUNTER 12-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-PDIP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
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MC74AC4040MELG MC74AC4040MELG onsemi Description: IC BINARY COUNTR 12BIT 16SOEIAJ
Packaging: Bulk
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOEIAJ
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
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SC79L05ABDR2G onsemi MC79L00-D.PDF Description: IC REG LINEAR NEG 5V 100MA 5V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMF11AT1 SMF11AT1 onsemi SMF5.0AT1%20Series.pdf Description: TVS DIODE 11VWM 18.2VC SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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SMF11AT1G SMF11AT1G onsemi SMF5.0AT1G_Series_DS.pdf Description: 200W TRANSIENT VOLTAGE SUPPRESSO
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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3N256 3N256 onsemi 2KBP005M_3N253-2KBP10M_3N259.pdf Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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FGHL40T65LQDT FGHL40T65LQDT onsemi fghl40t65lqdt-d.pdf Description: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/364ns
Switching Energy: 620µJ (on), 1.03mJ (off)
Test Condition: 400V, 20A, 4.7Ohm, 15V
Gate Charge: 414 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 273 W
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MPSW01 MPSW01 onsemi MPSW01.pdf Description: TRANS NPN 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW01G MPSW01G onsemi mpsw01-d.pdf Description: TRANS NPN 30V 1A TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW05G MPSW05G onsemi mpsw05-d.pdf Description: TRANS NPN 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSW06G MPSW06G onsemi mpsw05-d.pdf Description: TRANS NPN 80V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSW51ARLRAG MPSW51ARLRAG onsemi mpsw51-d.pdf Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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MPSW51G MPSW51G onsemi mpsw51-d.pdf Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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MPSW55G MPSW55G onsemi mpsw55-d.pdf Description: TRANS PNP 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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MPSW55RLRAG MPSW55RLRAG onsemi mpsw55-d.pdf Description: TRANS PNP 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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NVTYS040N10MCLTWG NVTYS040N10MCLTWG onsemi nvtys040n10mcl-d.pdf Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 27µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V
Qualification: AEC-Q101
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BD680ASTU BD680ASTU onsemi BD682-D.pdf Description: TRANS PNP DARL 80V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 14 W
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BSR16 BSR16 onsemi BSR16-D.PDF Description: TRANS PNP 60V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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BSR16 BSR16 onsemi BSR16-D.PDF Description: TRANS PNP 60V 0.8A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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BZX85C22 BZX85C22 onsemi FAIRS45281-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 22V 1.3W DO41G
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-41G
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 16 V
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M74HCT4852ADTR2G M74HCT4852ADTR2G onsemi mc74hct4851a-d.pdf Description: IC SWITCH SP4TX2 400OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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M74HCT4852ADTR2G M74HCT4852ADTR2G onsemi mc74hct4851a-d.pdf Description: IC SWITCH SP4TX2 400OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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MC74HCT4852ADR2G MC74HCT4852ADR2G onsemi mc74hct4851a-d.pdf Description: IC SWITCH SP4T X 2 400OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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MC74HCT4852ADR2G MC74HCT4852ADR2G onsemi mc74hct4851a-d.pdf Description: IC SWITCH SP4T X 2 400OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
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MC74HCT4851AADR2G onsemi Description: IC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP8T - NO/NC
Multiplexer/Demultiplexer Circuit: 8:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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M74HCT4851ADWR2G M74HCT4851ADWR2G onsemi mc74hct4851a-d.pdf Description: IC MUX 8:1 400OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 8:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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M74HCT4851ADWR2G M74HCT4851ADWR2G onsemi mc74hct4851a-d.pdf Description: IC MUX 8:1 400OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 8:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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NTD50N03R-1G NTD50N03R-1G onsemi ntd50n03r-d.pdf Description: MOSFET N-CH 25V 7.8A/45A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 12 V
auf Bestellung 5609 Stücke:
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1817+0.31 EUR
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NTD50N03R-35G NTD50N03R-35G onsemi ntd50n03r-d.pdf Description: MOSFET N-CH 25V 7.8A/45A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 12 V
auf Bestellung 35200 Stücke:
Lieferzeit 10-14 Tag (e)
2019+0.27 EUR
Mindestbestellmenge: 2019 Stücke
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NTD50N03RG NTD50N03RG onsemi ntd50n03r-d.pdf Description: MOSFET N-CH 25V 7.8A/45A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 12 V
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NTD50N03RT4G NTD50N03RT4G onsemi ntd50n03r-d.pdf Description: MOSFET N-CH 25V 7.8A/45A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 12 V
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2019+0.27 EUR
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NCS2553DG NCS2553DG onsemi ncs2553-d.pdf Description: IC AMP FILTER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Applications: Filter
Voltage - Supply, Single/Dual (±): 4.75V ~ 5.25V
Supplier Device Package: 8-SOIC
Number of Circuits: 3
Current - Supply: 23 mA
Current - Output / Channel: 50 mA
-3db Bandwidth: 9 MHz
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939+0.57 EUR
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NVMFWS020N06CT1G nvmfs020n06c-d.pdf
NVMFWS020N06CT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.2 EUR
3000+1.12 EUR
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NVMFWS020N06CT1G nvmfs020n06c-d.pdf
NVMFWS020N06CT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.24 EUR
10+2.71 EUR
100+1.84 EUR
500+1.46 EUR
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NVMFWS003P03P8ZT1G nvmfs003p03p8z-d.pdf
NVMFWS003P03P8ZT1G
Hersteller: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
auf Bestellung 1466 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.95 EUR
10+3.88 EUR
100+2.7 EUR
500+2.19 EUR
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NTMFWS1D5N08XT1G ntmfws1d5n08x-d.pdf
NTMFWS1D5N08XT1G
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFWS1D5N08XT1G ntmfws1d5n08x-d.pdf
NTMFWS1D5N08XT1G
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Produkt ist nicht verfügbar
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NVMFWS003N10MCT1G nvmfws003n10mc-d.pdf
NVMFWS003N10MCT1G
Hersteller: onsemi
Description: PTNG 100V STD SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFWS003N10MCT1G nvmfws003n10mc-d.pdf
NVMFWS003N10MCT1G
Hersteller: onsemi
Description: PTNG 100V STD SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFWS002N10MCLT1G nvmfws002n10mcl-d.pdf
NVMFWS002N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFWS002N10MCLT1G nvmfws002n10mcl-d.pdf
NVMFWS002N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NZL6V8AXV3T3G NZL5V6AXV3T1_Series.pdf
NZL6V8AXV3T3G
Hersteller: onsemi
Description: TVS DIODE 4.5VWM 7.9VC SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.5V
Supplier Device Package: SC-89-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 7.9V
Power - Peak Pulse: 73W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NZL5V6ATT1G
NZL5V6ATT1G
Hersteller: onsemi
Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NZL5V6ATT1G
NZL5V6ATT1G
Hersteller: onsemi
Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NZ23C5V6ALT1G nz23c5v6al-d.pdf
NZ23C5V6ALT1G
Hersteller: onsemi
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Produkt ist nicht verfügbar
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NZ23C5V6ALT1G nz23c5v6al-d.pdf
NZ23C5V6ALT1G
Hersteller: onsemi
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
auf Bestellung 2528500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3535+0.14 EUR
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74LVTH16245MTD 74LVT16245, 74LVTH16245.pdf
74LVTH16245MTD
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
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74LVTH16245MTDX 74LVT16245, 74LVTH16245.pdf
74LVTH16245MTDX
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
Produkt ist nicht verfügbar
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SMMBZ33VALT1G
Hersteller: onsemi
Description: TVS DIODES 26VWM 46VC SOT23
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
6000+0.15 EUR
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SMMBZ33VALT1G
Hersteller: onsemi
Description: TVS DIODES 26VWM 46VC SOT23
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
33+0.64 EUR
100+0.32 EUR
500+0.26 EUR
1000+0.19 EUR
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BZX79C15 bzx79c2v4-d.pdf
BZX79C15
Hersteller: onsemi
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 18592 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
84+0.25 EUR
118+0.18 EUR
136+0.15 EUR
500+0.11 EUR
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NLV74HC138ADTR2G mc74hc138a-d.pdf
NLV74HC138ADTR2G
Hersteller: onsemi
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
auf Bestellung 28813 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+57.57 EUR
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BC817-40LT1 bc817-16lt1-d.pdf
BC817-40LT1
Hersteller: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
auf Bestellung 451848 Stücke:
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MMBD6050LT1 mmbd6050lt1-d.pdf
MMBD6050LT1
Hersteller: onsemi
Description: DIODE STANDARD 70V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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MMBD6050LT3 mmbd6050lt1-d.pdf
Hersteller: onsemi
Description: DIODE SWITCHING 70V SOT-23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBD6050 ONSM-S-A0003587681-1.pdf?t.download=true&u=5oefqw
MMBD6050
Hersteller: onsemi
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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MMBD6050 ONSM-S-A0003587681-1.pdf?t.download=true&u=5oefqw
MMBD6050
Hersteller: onsemi
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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MMBD6050 ONSM-S-A0003587681-1.pdf?t.download=true&u=5oefqw
MMBD6050
Hersteller: onsemi
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MC74AC4040D MC74AC4040-D.pdf
MC74AC4040D
Hersteller: onsemi
Description: IC BINARY COUNTER 12-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
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MC74AC4040N MC74AC4040-D.pdf
MC74AC4040N
Hersteller: onsemi
Description: IC BINARY COUNTER 12-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-PDIP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
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MC74AC4040NG MC74AC4040-D.pdf
MC74AC4040NG
Hersteller: onsemi
Description: IC BINARY COUNTER 12-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-PDIP
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
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MC74AC4040MELG
MC74AC4040MELG
Hersteller: onsemi
Description: IC BINARY COUNTR 12BIT 16SOEIAJ
Packaging: Bulk
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOEIAJ
Voltage - Supply: 2 V ~ 6 V
Count Rate: 140 MHz
Number of Bits per Element: 12
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386+1.52 EUR
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SC79L05ABDR2G MC79L00-D.PDF
Hersteller: onsemi
Description: IC REG LINEAR NEG 5V 100MA 5V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMF11AT1 SMF5.0AT1%20Series.pdf
SMF11AT1
Hersteller: onsemi
Description: TVS DIODE 11VWM 18.2VC SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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SMF11AT1G SMF5.0AT1G_Series_DS.pdf
SMF11AT1G
Hersteller: onsemi
Description: 200W TRANSIENT VOLTAGE SUPPRESSO
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
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3N256 2KBP005M_3N253-2KBP10M_3N259.pdf
3N256
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 400V 2A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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FGHL40T65LQDT fghl40t65lqdt-d.pdf
FGHL40T65LQDT
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/364ns
Switching Energy: 620µJ (on), 1.03mJ (off)
Test Condition: 400V, 20A, 4.7Ohm, 15V
Gate Charge: 414 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 273 W
auf Bestellung 400 Stücke:
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3+9.72 EUR
30+5.47 EUR
120+4.53 EUR
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MPSW01 MPSW01.pdf
MPSW01
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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1514+0.37 EUR
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MPSW01G mpsw01-d.pdf
MPSW01G
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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1137+0.48 EUR
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MPSW05G mpsw05-d.pdf
MPSW05G
Hersteller: onsemi
Description: TRANS NPN 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
auf Bestellung 4414 Stücke:
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AnzahlPrivatkunde
2019+0.27 EUR
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MPSW06G mpsw05-d.pdf
MPSW06G
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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1137+0.48 EUR
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MPSW51ARLRAG mpsw51-d.pdf
MPSW51ARLRAG
Hersteller: onsemi
Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
auf Bestellung 129977 Stücke:
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1137+0.48 EUR
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MPSW51G mpsw51-d.pdf
MPSW51G
Hersteller: onsemi
Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
auf Bestellung 13381 Stücke:
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1137+0.48 EUR
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MPSW55G mpsw55-d.pdf
MPSW55G
Hersteller: onsemi
Description: TRANS PNP 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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1137+0.48 EUR
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MPSW55RLRAG mpsw55-d.pdf
MPSW55RLRAG
Hersteller: onsemi
Description: TRANS PNP 60V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
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AnzahlPrivatkunde
2597+0.23 EUR
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NVTYS040N10MCLTWG nvtys040n10mcl-d.pdf
NVTYS040N10MCLTWG
Hersteller: onsemi
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 27µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2820 Stücke:
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8+2.75 EUR
13+1.74 EUR
100+1.15 EUR
500+0.9 EUR
1000+0.82 EUR
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BD680ASTU BD682-D.pdf
BD680ASTU
Hersteller: onsemi
Description: TRANS PNP DARL 80V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 14 W
Produkt ist nicht verfügbar
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BSR16 BSR16-D.PDF
BSR16
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
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BSR16 BSR16-D.PDF
BSR16
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
37+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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BZX85C22 FAIRS45281-1.pdf?t.download=true&u=5oefqw
BZX85C22
Hersteller: onsemi
Description: DIODE ZENER 22V 1.3W DO41G
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-41G
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 16 V
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AnzahlPrivatkunde
6045+0.09 EUR
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M74HCT4852ADTR2G mc74hct4851a-d.pdf
M74HCT4852ADTR2G
Hersteller: onsemi
Description: IC SWITCH SP4TX2 400OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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M74HCT4852ADTR2G mc74hct4851a-d.pdf
M74HCT4852ADTR2G
Hersteller: onsemi
Description: IC SWITCH SP4TX2 400OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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MC74HCT4852ADR2G mc74hct4851a-d.pdf
MC74HCT4852ADR2G
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 400OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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MC74HCT4852ADR2G mc74hct4851a-d.pdf
MC74HCT4852ADR2G
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 400OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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MC74HCT4851AADR2G
Hersteller: onsemi
Description: IC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP8T - NO/NC
Multiplexer/Demultiplexer Circuit: 8:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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M74HCT4851ADWR2G mc74hct4851a-d.pdf
M74HCT4851ADWR2G
Hersteller: onsemi
Description: IC MUX 8:1 400OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 8:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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M74HCT4851ADWR2G mc74hct4851a-d.pdf
M74HCT4851ADWR2G
Hersteller: onsemi
Description: IC MUX 8:1 400OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 8:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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NTD50N03R-1G ntd50n03r-d.pdf
NTD50N03R-1G
Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/45A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 12 V
auf Bestellung 5609 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1817+0.31 EUR
Mindestbestellmenge: 1817 Stücke
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NTD50N03R-35G ntd50n03r-d.pdf
NTD50N03R-35G
Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/45A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 12 V
auf Bestellung 35200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2019+0.27 EUR
Mindestbestellmenge: 2019 Stücke
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NTD50N03RG ntd50n03r-d.pdf
NTD50N03RG
Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/45A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 12 V
auf Bestellung 3559 Stücke:
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AnzahlPrivatkunde
1010+0.55 EUR
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NTD50N03RT4G ntd50n03r-d.pdf
NTD50N03RT4G
Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/45A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 11.5V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 12 V
auf Bestellung 85643 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2019+0.27 EUR
Mindestbestellmenge: 2019 Stücke
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NCS2553DG ncs2553-d.pdf
NCS2553DG
Hersteller: onsemi
Description: IC AMP FILTER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Applications: Filter
Voltage - Supply, Single/Dual (±): 4.75V ~ 5.25V
Supplier Device Package: 8-SOIC
Number of Circuits: 3
Current - Supply: 23 mA
Current - Output / Channel: 50 mA
-3db Bandwidth: 9 MHz
auf Bestellung 25770 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
939+0.57 EUR
Mindestbestellmenge: 939 Stücke
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