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NRTS6100PFST3G NRTS6100PFST3G onsemi nrts6100pfs-d.pdf Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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NRTS6100PFST3G NRTS6100PFST3G onsemi nrts6100pfs-d.pdf Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 4840 Stücke:
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9+2.18 EUR
13+1.37 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.65 EUR
2000+0.61 EUR
Mindestbestellmenge: 9
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NRTS860PFST3G NRTS860PFST3G onsemi NRTS860PFS-D.PDF Description: DIODE SCHOTTKY 60V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Produkt ist nicht verfügbar
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NRTS860PFST3G NRTS860PFST3G onsemi NRTS860PFS-D.PDF Description: DIODE SCHOTTKY 60V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
auf Bestellung 4950 Stücke:
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13+1.41 EUR
16+1.16 EUR
100+0.9 EUR
500+0.76 EUR
1000+0.62 EUR
2000+0.59 EUR
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NRVTS1260PFST3G NRVTS1260PFST3G onsemi NRTS1260PFS-D.PDF Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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5000+0.56 EUR
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NRVTS1260PFST3G NRVTS1260PFST3G onsemi NRTS1260PFS-D.PDF Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 19745 Stücke:
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10+1.92 EUR
14+1.28 EUR
100+0.89 EUR
500+0.72 EUR
1000+0.66 EUR
2000+0.61 EUR
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NRVTS1560PFST3G NRVTS1560PFST3G onsemi NRTS1560PFS-D.PDF Description: DIODE SCHOTTKY 60V 15A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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5000+0.59 EUR
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NRVTS1560PFST3G NRVTS1560PFST3G onsemi NRTS1560PFS-D.PDF Description: DIODE SCHOTTKY 60V 15A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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12+1.5 EUR
15+1.23 EUR
100+0.95 EUR
500+0.81 EUR
1000+0.66 EUR
2000+0.62 EUR
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NRVTS6100PFST3G NRVTS6100PFST3G onsemi nrts6100pfs-d.pdf Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 20000 Stücke:
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NRVTS6100PFST3G NRVTS6100PFST3G onsemi nrts6100pfs-d.pdf Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 20000 Stücke:
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9+2.09 EUR
14+1.32 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
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NRTS12100PFST3G NRTS12100PFST3G onsemi NRTS12100PFS-D.PDF Description: DIODE SCHOTTKY 100V 12A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 930pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
auf Bestellung 5000 Stücke:
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5000+0.63 EUR
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NRTS12100PFST3G NRTS12100PFST3G onsemi NRTS12100PFS-D.PDF Description: DIODE SCHOTTKY 100V 12A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 930pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
auf Bestellung 5000 Stücke:
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9+2.08 EUR
13+1.4 EUR
100+0.97 EUR
500+0.79 EUR
1000+0.72 EUR
2000+0.67 EUR
Mindestbestellmenge: 9
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NRVTS3060MFST3G NRVTS3060MFST3G onsemi nrvts3060mfs-d.pdf Description: DIODE SCHOTTKY 60V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3140pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVTS3060MFST3G NRVTS3060MFST3G onsemi nrvts3060mfs-d.pdf Description: DIODE SCHOTTKY 60V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3140pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 2945 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.87 EUR
10+2.39 EUR
100+1.9 EUR
500+1.61 EUR
1000+1.37 EUR
2000+1.3 EUR
Mindestbestellmenge: 7
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74FST3245DWR2 74FST3245DWR2 onsemi 74FST3245%20Rev2.pdf Description: IC BUS SWITCH 8 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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74FST3244DWR2 74FST3244DWR2 onsemi 74FST3244%20Rev2.pdf Description: IC BUS SWITCH 4 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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74FST3244DTR2 74FST3244DTR2 onsemi 74FST3244%20Rev2.pdf Description: IC BUS SWITCH 4 X 1:1 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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74FST3383DWR2 74FST3383DWR2 onsemi 74FST3383%20Rev6.pdf Description: IC BUS FET EXCHG SW 5X2:2 24SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 2:2
Type: Bus FET Exchange Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 24-SOIC
auf Bestellung 16000 Stücke:
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2219+0.23 EUR
Mindestbestellmenge: 2219
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KBP01M KBP01M onsemi KBP005M,3N246 - KBP10M,3N252.pdf Description: BRIDGE RECT 1P 100V 1.5A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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MV2101G MV2101G onsemi mmbv2101lt1-d.pdf Description: DIODE TUNING 30V 6.8PF TO92-2
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Q @ Vr, F: 450 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C30
Supplier Device Package: TO-92
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 3.2
auf Bestellung 6000 Stücke:
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1680+0.29 EUR
Mindestbestellmenge: 1680
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MC7924CT MC7924CT onsemi mc7900-d.pdf description Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
auf Bestellung 25875 Stücke:
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2049+0.25 EUR
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MC7924CTG MC7924CTG onsemi mc7900-d.pdf description Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
auf Bestellung 14703 Stücke:
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809+0.62 EUR
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2N2369 onsemi 2N%2CPN%2CMPS%2CFTSO%20NPN%20Type.pdf Description: TRANS NPN 15V 0.2A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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SMMBD2837LT1G SMMBD2837LT1G onsemi mmbd2837lt1-d.pdf Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
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SMMBD2837LT1G SMMBD2837LT1G onsemi mmbd2837lt1-d.pdf Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
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MMBD2835LT1 MMBD2835LT1 onsemi mmbd2835lt1-d.pdf Description: DIODE SWITCH DUAL 35V SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMMBD2835LT1G SMMBD2835LT1G onsemi mmbd2835lt1-d.pdf Description: DIODE ARRAY GP 35V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
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CAT28LV65W25 CAT28LV65W25 onsemi cat28lv65-d.pdf Description: IC EEPROM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 199 Stücke:
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52+9.46 EUR
Mindestbestellmenge: 52
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NVTFS6H850NWFTAG NVTFS6H850NWFTAG onsemi nvtfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
1500+0.77 EUR
3000+0.71 EUR
4500+0.68 EUR
7500+0.65 EUR
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NVTFS6H850NWFTAG NVTFS6H850NWFTAG onsemi nvtfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 33515 Stücke:
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100+1.12 EUR
500+0.88 EUR
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NVTFS6H850NLWFTAG NVTFS6H850NLWFTAG onsemi nvtfs6h850nl-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.95 EUR
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4500+0.84 EUR
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NVTFS6H850NLWFTAG NVTFS6H850NLWFTAG onsemi nvtfs6h850nl-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 7480 Stücke:
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10+2.01 EUR
100+1.36 EUR
500+1.08 EUR
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P6SMB68AT3 P6SMB68AT3 onsemi P6SMB6.8AT3%20Series.pdf Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB68AT3 P6SMB68AT3 onsemi P6SMB6.8AT3%20Series.pdf Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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LA72715V-TLM-E onsemi ONSMS35928-1.pdf?t.download=true&u=5oefqw Description: JPN MTS (MULTI CHANNEL TELEVISIO
Packaging: Bulk
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AS0140AT2C00XUSM0-TRBR onsemi as0140at?pdf=Y Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
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AS0140AT2C00XUSM0-TRBR onsemi as0140at?pdf=Y Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
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Lieferzeit 10-14 Tag (e)
1+38.28 EUR
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AS0140AT2C00XUSM0-TPBR onsemi as0140at?pdf=Y Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
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Lieferzeit 10-14 Tag (e)
2000+38.41 EUR
Mindestbestellmenge: 2000
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AS0140AT2C00XUSM0-TPBR onsemi as0140at?pdf=Y Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
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Lieferzeit 10-14 Tag (e)
1+38.7 EUR
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MAC12HCM MAC12HCM onsemi MAC12HCDG_MG_NG.pdf Description: TRIAC 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
auf Bestellung 23243 Stücke:
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987+0.5 EUR
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KSH45H11ITU KSH45H11ITU onsemi KSH45H11.pdf Description: TRANS PNP 80V 8A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
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KSH45H11TM KSH45H11TM onsemi KSH45H11.pdf Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
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KSH45H11TM KSH45H11TM onsemi KSH45H11.pdf Description: TRANS PNP 80V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 4336 Stücke:
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550+0.83 EUR
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SZBZX84B9V1LT3G SZBZX84B9V1LT3G onsemi bzx84c2v4lt1-d.pdf Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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10000+0.054 EUR
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SZBZX84B9V1LT3G SZBZX84B9V1LT3G onsemi bzx84c2v4lt1-d.pdf Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
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56+0.32 EUR
89+0.2 EUR
143+0.12 EUR
500+0.09 EUR
1000+0.079 EUR
2000+0.07 EUR
5000+0.06 EUR
Mindestbestellmenge: 56
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EFC6602R-TR EFC6602R-TR onsemi efc6602r-d.pdf Description: MOSFET 2N-CH EFCP2718
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
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EFC6602R-TR EFC6602R-TR onsemi efc6602r-d.pdf Description: MOSFET 2N-CH EFCP2718
Packaging: Bulk
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
auf Bestellung 635000 Stücke:
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826+0.55 EUR
Mindestbestellmenge: 826
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FUSB15201VMNWTWG FUSB15201VMNWTWG onsemi FUSB15201-D.PDF Description: INTEGRATED DUAL PORT USB TYPE-C
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+5 EUR
Mindestbestellmenge: 4000
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FUSB15201VMNWTWG FUSB15201VMNWTWG onsemi FUSB15201-D.PDF Description: INTEGRATED DUAL PORT USB TYPE-C
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5868 Stücke:
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2+11.33 EUR
10+7.56 EUR
25+6.58 EUR
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250+4.92 EUR
500+4.68 EUR
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FUSB15200MNTWG FUSB15200MNTWG onsemi FUSB15200-D.PDF Description: DUAL PORT USB TYPE-C & PDCONTROL
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 40-QFN (5x5)
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FUSB15200MNTWG FUSB15200MNTWG onsemi FUSB15200-D.PDF Description: DUAL PORT USB TYPE-C & PDCONTROL
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 40-QFN (5x5)
auf Bestellung 4965 Stücke:
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3+7.44 EUR
10+5.67 EUR
25+5.22 EUR
100+4.73 EUR
250+4.5 EUR
500+4.36 EUR
1000+4.25 EUR
2500+4.12 EUR
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FDPF51N25YDTU FDPF51N25YDTU onsemi fdpf51n25rdtu-d.pdf Description: MOSFET N-CH 250V 51A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Produkt ist nicht verfügbar
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AR0132AT6R00XPEA0-TRBR AR0132AT6R00XPEA0-TRBR onsemi 5556_AR0132AT.pdf Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AR0132AT6R00XPEA0-TRBR AR0132AT6R00XPEA0-TRBR onsemi 5556_AR0132AT.pdf Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AR0132AT6G00XPEA0-AA-DRBR AR0132AT6G00XPEA0-AA-DRBR onsemi Description: DIGITAL IMAGE SENSOR IBGA
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Frames per Second: 45
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.75 EUR
10+35.62 EUR
25+31.55 EUR
80+30.53 EUR
440+28.5 EUR
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AR0132AT6M00XPEA0-DPBR AR0132AT6M00XPEA0-DPBR onsemi 5556_AR0132AT.pdf Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.69 EUR
5+32.63 EUR
10+31.49 EUR
25+30.13 EUR
50+29.19 EUR
100+28.34 EUR
500+26.61 EUR
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AR0132AT6R00XPEA0-DPBR AR0132AT6R00XPEA0-DPBR onsemi 5556_AR0132AT.pdf Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.69 EUR
5+31.9 EUR
10+30.54 EUR
25+28.96 EUR
40+28.24 EUR
80+27.26 EUR
440+25.27 EUR
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AR0132AT6C00XPEA0-TRBR AR0132AT6C00XPEA0-TRBR onsemi 5556_AR0132AT.pdf Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AR0132AT6C00XPEA0-TRBR AR0132AT6C00XPEA0-TRBR onsemi 5556_AR0132AT.pdf Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AR0132AT6C00XPEA0-DRBR AR0132AT6C00XPEA0-DRBR onsemi AR0132AT.pdf Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
1+37.22 EUR
5+33.29 EUR
10+31.88 EUR
25+30.24 EUR
40+29.49 EUR
80+28.48 EUR
440+26.41 EUR
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NRTS6100PFST3G nrts6100pfs-d.pdf
NRTS6100PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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NRTS6100PFST3G nrts6100pfs-d.pdf
NRTS6100PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 4840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
13+1.37 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.65 EUR
2000+0.61 EUR
Mindestbestellmenge: 9
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NRTS860PFST3G NRTS860PFS-D.PDF
NRTS860PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Produkt ist nicht verfügbar
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NRTS860PFST3G NRTS860PFS-D.PDF
NRTS860PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
16+1.16 EUR
100+0.9 EUR
500+0.76 EUR
1000+0.62 EUR
2000+0.59 EUR
Mindestbestellmenge: 13
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NRVTS1260PFST3G NRTS1260PFS-D.PDF
NRVTS1260PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.56 EUR
Mindestbestellmenge: 5000
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NRVTS1260PFST3G NRTS1260PFS-D.PDF
NRVTS1260PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 12A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1180pf @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 12 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 19745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
14+1.28 EUR
100+0.89 EUR
500+0.72 EUR
1000+0.66 EUR
2000+0.61 EUR
Mindestbestellmenge: 10
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NRVTS1560PFST3G NRTS1560PFS-D.PDF
NRVTS1560PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 15A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.59 EUR
Mindestbestellmenge: 5000
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NRVTS1560PFST3G NRTS1560PFS-D.PDF
NRVTS1560PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 15A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
15+1.23 EUR
100+0.95 EUR
500+0.81 EUR
1000+0.66 EUR
2000+0.62 EUR
Mindestbestellmenge: 12
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NRVTS6100PFST3G nrts6100pfs-d.pdf
NRVTS6100PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.47 EUR
Mindestbestellmenge: 5000
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NRVTS6100PFST3G nrts6100pfs-d.pdf
NRVTS6100PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 6A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 827pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
14+1.32 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.58 EUR
Mindestbestellmenge: 9
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NRTS12100PFST3G NRTS12100PFS-D.PDF
NRTS12100PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 12A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 930pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.63 EUR
Mindestbestellmenge: 5000
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NRTS12100PFST3G NRTS12100PFS-D.PDF
NRTS12100PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 12A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 930pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
13+1.4 EUR
100+0.97 EUR
500+0.79 EUR
1000+0.72 EUR
2000+0.67 EUR
Mindestbestellmenge: 9
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NRVTS3060MFST3G nrvts3060mfs-d.pdf
NRVTS3060MFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3140pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NRVTS3060MFST3G nrvts3060mfs-d.pdf
NRVTS3060MFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3140pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 2945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
10+2.39 EUR
100+1.9 EUR
500+1.61 EUR
1000+1.37 EUR
2000+1.3 EUR
Mindestbestellmenge: 7
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74FST3245DWR2 74FST3245%20Rev2.pdf
74FST3245DWR2
Hersteller: onsemi
Description: IC BUS SWITCH 8 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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74FST3244DWR2 74FST3244%20Rev2.pdf
74FST3244DWR2
Hersteller: onsemi
Description: IC BUS SWITCH 4 X 1:1 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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74FST3244DTR2 74FST3244%20Rev2.pdf
74FST3244DTR2
Hersteller: onsemi
Description: IC BUS SWITCH 4 X 1:1 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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74FST3383DWR2 74FST3383%20Rev6.pdf
74FST3383DWR2
Hersteller: onsemi
Description: IC BUS FET EXCHG SW 5X2:2 24SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 2:2
Type: Bus FET Exchange Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 24-SOIC
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2219+0.23 EUR
Mindestbestellmenge: 2219
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KBP01M KBP005M,3N246 - KBP10M,3N252.pdf
KBP01M
Hersteller: onsemi
Description: BRIDGE RECT 1P 100V 1.5A KBPM
Packaging: Tube
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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MV2101G mmbv2101lt1-d.pdf
MV2101G
Hersteller: onsemi
Description: DIODE TUNING 30V 6.8PF TO92-2
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Q @ Vr, F: 450 @ 4V, 50MHz
Capacitance Ratio Condition: C2/C30
Supplier Device Package: TO-92
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 3.2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1680+0.29 EUR
Mindestbestellmenge: 1680
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MC7924CT description mc7900-d.pdf
MC7924CT
Hersteller: onsemi
Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
auf Bestellung 25875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.25 EUR
Mindestbestellmenge: 2049
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MC7924CTG description mc7900-d.pdf
MC7924CTG
Hersteller: onsemi
Description: IC REG LINEAR -24V 1A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): -24V
PSRR: 56dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
auf Bestellung 14703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
809+0.62 EUR
Mindestbestellmenge: 809
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2N2369 2N%2CPN%2CMPS%2CFTSO%20NPN%20Type.pdf
Hersteller: onsemi
Description: TRANS NPN 15V 0.2A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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SMMBD2837LT1G mmbd2837lt1-d.pdf
SMMBD2837LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
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SMMBD2837LT1G mmbd2837lt1-d.pdf
SMMBD2837LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 30V 150MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
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MMBD2835LT1 mmbd2835lt1-d.pdf
MMBD2835LT1
Hersteller: onsemi
Description: DIODE SWITCH DUAL 35V SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMMBD2835LT1G mmbd2835lt1-d.pdf
SMMBD2835LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 35V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
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CAT28LV65W25 cat28lv65-d.pdf
CAT28LV65W25
Hersteller: onsemi
Description: IC EEPROM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
52+9.46 EUR
Mindestbestellmenge: 52
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NVTFS6H850NWFTAG nvtfs6h850n-d.pdf
NVTFS6H850NWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.77 EUR
3000+0.71 EUR
4500+0.68 EUR
7500+0.65 EUR
Mindestbestellmenge: 1500
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NVTFS6H850NWFTAG nvtfs6h850n-d.pdf
NVTFS6H850NWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 33515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
11+1.67 EUR
100+1.12 EUR
500+0.88 EUR
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NVTFS6H850NLWFTAG nvtfs6h850nl-d.pdf
NVTFS6H850NLWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.95 EUR
3000+0.88 EUR
4500+0.84 EUR
Mindestbestellmenge: 1500
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NVTFS6H850NLWFTAG nvtfs6h850nl-d.pdf
NVTFS6H850NLWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 7480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
10+2.01 EUR
100+1.36 EUR
500+1.08 EUR
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P6SMB68AT3 P6SMB6.8AT3%20Series.pdf
P6SMB68AT3
Hersteller: onsemi
Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB68AT3 P6SMB6.8AT3%20Series.pdf
P6SMB68AT3
Hersteller: onsemi
Description: TVS DIODE 58.1VWM 92VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 305pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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LA72715V-TLM-E ONSMS35928-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: JPN MTS (MULTI CHANNEL TELEVISIO
Packaging: Bulk
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
241+2.03 EUR
Mindestbestellmenge: 241
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AS0140AT2C00XUSM0-TRBR as0140at?pdf=Y
Hersteller: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+37.99 EUR
Mindestbestellmenge: 2000
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AS0140AT2C00XUSM0-TRBR as0140at?pdf=Y
Hersteller: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.28 EUR
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AS0140AT2C00XUSM0-TPBR as0140at?pdf=Y
Hersteller: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Tape & Reel (TR)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+38.41 EUR
Mindestbestellmenge: 2000
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AS0140AT2C00XUSM0-TPBR as0140at?pdf=Y
Hersteller: onsemi
Description: 1MP 1/4 CIS SOC
Packaging: Cut Tape (CT)
Package / Case: 130-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.98V, 3V ~ 3.6V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 130-IBGA (8.5x8.5)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.7 EUR
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MAC12HCM MAC12HCDG_MG_NG.pdf
MAC12HCM
Hersteller: onsemi
Description: TRIAC 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
auf Bestellung 23243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
987+0.5 EUR
Mindestbestellmenge: 987
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KSH45H11ITU KSH45H11.pdf
KSH45H11ITU
Hersteller: onsemi
Description: TRANS PNP 80V 8A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 70302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
466+0.97 EUR
Mindestbestellmenge: 466
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KSH45H11TM KSH45H11.pdf
KSH45H11TM
Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
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KSH45H11TM KSH45H11.pdf
KSH45H11TM
Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 4336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
550+0.83 EUR
Mindestbestellmenge: 550
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SZBZX84B9V1LT3G bzx84c2v4lt1-d.pdf
SZBZX84B9V1LT3G
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.054 EUR
Mindestbestellmenge: 10000
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SZBZX84B9V1LT3G bzx84c2v4lt1-d.pdf
SZBZX84B9V1LT3G
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
89+0.2 EUR
143+0.12 EUR
500+0.09 EUR
1000+0.079 EUR
2000+0.07 EUR
5000+0.06 EUR
Mindestbestellmenge: 56
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EFC6602R-TR efc6602r-d.pdf
EFC6602R-TR
Hersteller: onsemi
Description: MOSFET 2N-CH EFCP2718
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
Produkt ist nicht verfügbar
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EFC6602R-TR efc6602r-d.pdf
EFC6602R-TR
Hersteller: onsemi
Description: MOSFET 2N-CH EFCP2718
Packaging: Bulk
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
auf Bestellung 635000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
826+0.55 EUR
Mindestbestellmenge: 826
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FUSB15201VMNWTWG FUSB15201-D.PDF
FUSB15201VMNWTWG
Hersteller: onsemi
Description: INTEGRATED DUAL PORT USB TYPE-C
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+5 EUR
Mindestbestellmenge: 4000
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FUSB15201VMNWTWG FUSB15201-D.PDF
FUSB15201VMNWTWG
Hersteller: onsemi
Description: INTEGRATED DUAL PORT USB TYPE-C
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.33 EUR
10+7.56 EUR
25+6.58 EUR
100+5.46 EUR
250+4.92 EUR
500+4.68 EUR
Mindestbestellmenge: 2
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FUSB15200MNTWG FUSB15200-D.PDF
FUSB15200MNTWG
Hersteller: onsemi
Description: DUAL PORT USB TYPE-C & PDCONTROL
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 40-QFN (5x5)
Produkt ist nicht verfügbar
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FUSB15200MNTWG FUSB15200-D.PDF
FUSB15200MNTWG
Hersteller: onsemi
Description: DUAL PORT USB TYPE-C & PDCONTROL
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: USB, Type-C Controller
Current - Supply: 330µA
Supplier Device Package: 40-QFN (5x5)
auf Bestellung 4965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.44 EUR
10+5.67 EUR
25+5.22 EUR
100+4.73 EUR
250+4.5 EUR
500+4.36 EUR
1000+4.25 EUR
2500+4.12 EUR
Mindestbestellmenge: 3
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FDPF51N25YDTU fdpf51n25rdtu-d.pdf
FDPF51N25YDTU
Hersteller: onsemi
Description: MOSFET N-CH 250V 51A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
Produkt ist nicht verfügbar
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AR0132AT6R00XPEA0-TRBR 5556_AR0132AT.pdf
AR0132AT6R00XPEA0-TRBR
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AR0132AT6R00XPEA0-TRBR 5556_AR0132AT.pdf
AR0132AT6R00XPEA0-TRBR
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AR0132AT6G00XPEA0-AA-DRBR
AR0132AT6G00XPEA0-AA-DRBR
Hersteller: onsemi
Description: DIGITAL IMAGE SENSOR IBGA
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Frames per Second: 45
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.75 EUR
10+35.62 EUR
25+31.55 EUR
80+30.53 EUR
440+28.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0132AT6M00XPEA0-DPBR 5556_AR0132AT.pdf
AR0132AT6M00XPEA0-DPBR
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.69 EUR
5+32.63 EUR
10+31.49 EUR
25+30.13 EUR
50+29.19 EUR
100+28.34 EUR
500+26.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0132AT6R00XPEA0-DPBR 5556_AR0132AT.pdf
AR0132AT6R00XPEA0-DPBR
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
auf Bestellung 2450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.69 EUR
5+31.9 EUR
10+30.54 EUR
25+28.96 EUR
40+28.24 EUR
80+27.26 EUR
440+25.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AR0132AT6C00XPEA0-TRBR 5556_AR0132AT.pdf
AR0132AT6C00XPEA0-TRBR
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AR0132AT6C00XPEA0-TRBR 5556_AR0132AT.pdf
AR0132AT6C00XPEA0-TRBR
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Cut Tape (CT)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AR0132AT6C00XPEA0-DRBR AR0132AT.pdf
AR0132AT6C00XPEA0-DRBR
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.22 EUR
5+33.29 EUR
10+31.88 EUR
25+30.24 EUR
40+29.49 EUR
80+28.48 EUR
440+26.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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