| Foto | Bezeichnung | Hersteller | Beschreibung |
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NBXDBA014LN1TAG | onsemi |
Description: IC OSC XTAL DUAL FREQ 6CLCC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| NOIH2SM1000S-HHC | onsemi |
Description: IC SPACE IMAGE SENSOR 84-JLCCPackaging: Tray Package / Case: 84-CLCC Window (J-Lead) Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Pixel Size: 18µm x 18µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 84-JLCC (26.8x26.8) Frames per Second: 10.0 |
Produkt ist nicht verfügbar |
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NOIL1SE3000A-GDC | onsemi |
Description: IC IMAGE SENSOR 3MP 369-PGAFrames per Second: 485 Supplier Device Package: 369-µPGA (31x27) Active Pixel Array: 1696H x 1710V Pixel Size: 8µm x 8µm Voltage - Supply: 2.5V, 3.3V Operating Temperature: -40°C ~ 70°C (TJ) Type: CMOS Package / Case: 369-BFCPGA Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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74AUP1G57L6X | onsemi |
Description: IC GATE UNIV 2INPUT 6-MICROPAKNumber of Circuits: 1 Supplier Device Package: 6-MicroPak Schmitt Trigger Input: No Number of Inputs: 3 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 0.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: Configurable Multiple Function Mounting Type: Surface Mount Output Type: Single-Ended Package / Case: 6-UFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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74AUP1T97L6X | onsemi |
Description: IC TRANSLATOR UNIDIR 6MICROPAKNumber of Circuits: 1 Voltage - VCCB: 2.3 V ~ 3.6 V Voltage - VCCA: 1.8 V ~ 2.7 V Channels per Circuit: 1 Translator Type: Voltage Level Channel Type: Unidirectional Supplier Device Package: 6-MicroPak Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Single-Ended Package / Case: 6-UFDFN Features: Configurable Gate Logic Functions Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| BC547B_J35Z | onsemi |
Description: TRANS NPN 45V 0.1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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FAN4146ESX | onsemi |
Description: IC CTLR LOW PWR AC GFI 6-SSOTSupplier Device Package: SuperSOT™-6 Current - Supply: 400µA Applications: Ground Fault Protection Operating Temperature: -25°C ~ 80°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN4147SX | onsemi |
Description: IC CTLR LOW PWR AC GFI 6-SSOTSupplier Device Package: SuperSOT™-6 Current - Supply: 400µA Applications: Ground Fault Protection Operating Temperature: -35°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FAN4800ASNY | onsemi |
Description: IC PFC CTR AV CURR 268KHZ 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Voltage - Supply: 11V ~ 26V Frequency - Switching: 240kHz ~ 268kHz Mode: Average Current Supplier Device Package: 16-PDIP Part Status: Obsolete Current - Startup: 30 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FAN5405UCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 20WLCSPPart Status: Obsolete Current - Charging: Constant - Programmable Battery Pack Voltage: 4.5V (Max) Voltage - Supply (Max): 6V Fault Protection: Over Temperature, Over Voltage, Short Circuit Programmable Features: Current, Timer, Voltage Charge Current - Max: 1.25A Supplier Device Package: 20-WLCSP (1.96x1.56) Battery Chemistry: Lithium Ion/Polymer Operating Temperature: -30°C ~ 85°C (TA) Interface: I2C, USB Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 20-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FAN6204MY | onsemi |
Description: IC CTLR SR SYNC RECT LLC 8SOICDigiKey Programmable: Not Verified Current - Supply: 7 mA Supplier Device Package: 8-SOIC Applications: Secondary-Side Controller, Synchronous Rectifier Voltage - Supply: 4.5V ~ 28.5V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FAN7190M-F085 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOP Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 4.5A, 4.5A Logic Voltage - VIL, VIH: 1.2V, 2.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 25ns, 20ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 22V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| FAN7389M | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 24SOPPart Status: Obsolete Current - Peak Output (Source, Sink): 350mA, 650mA Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 6 Driven Configuration: Half-Bridge Channel Type: 3-Phase Rise / Fall Time (Typ): 50ns, 30ns Supplier Device Package: 24-SOP High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Packaging: Tube DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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FAN7930BM | onsemi |
Description: IC PFC CTRLR CRM 350KHZ 8SOPCurrent - Startup: 120 µA Part Status: Obsolete Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM) Frequency - Switching: 250kHz ~ 350kHz Voltage - Supply: 13V ~ 20V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FAN7930BMX | onsemi |
Description: IC PFC CTRLR CRM 350KHZ 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 20V Frequency - Switching: 250kHz ~ 350kHz Mode: Critical Conduction (CRM) Supplier Device Package: 8-SOIC Part Status: Obsolete Current - Startup: 120 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FAN7930CM | onsemi |
Description: IC PFC CTRLR CRM 350KHZ 8SOPPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 20V Frequency - Switching: 250kHz ~ 350kHz Mode: Critical Conduction (CRM) Supplier Device Package: 8-SOIC Part Status: Obsolete Current - Startup: 120 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FAN7930CMX | onsemi |
Description: IC PFC CTRLR CRM 350KHZ 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 20V Frequency - Switching: 250kHz ~ 350kHz Mode: Critical Conduction (CRM) Supplier Device Package: 8-SOIC Part Status: Obsolete Current - Startup: 120 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FCH47N60NF | onsemi |
Description: MOSFET N-CH 600V 45.8A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V Power Dissipation (Max): 368W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FDB016N04AL7 | onsemi |
Description: MOSFET N-CH 40V 160A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V Power Dissipation (Max): 283W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD7N25LZTM | onsemi |
Description: MOSFET N-CH 250V 6.2A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD850N10L | onsemi |
Description: MOSFET N-CH 100V 15.7A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86102LZ | onsemi |
Description: MOSFET N-CH 100V 8A/35A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86250 | onsemi |
Description: MOSFET N-CH 150V 8A/50A DPAKInput Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC2514SDC | onsemi |
Description: MOSFET N-CH 25V 24A/40A DLCOOL33Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Dual Cool ™ 33 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 3W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FDMC3020DC | onsemi |
Description: MOSFET N-CH 30V 17A/40A DLCOOL33Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: Dual Cool ™ 33 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FDMC7696 | onsemi |
Description: MOSFET N-CH 30V 12A/20A 8MLPInput Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FDMC86102L | onsemi |
Description: MOSFET N-CH 100V 7A/18A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FDMC8622 | onsemi |
Description: MOSFET N-CH 100V 4A/16A 8MLPInput Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86244 | onsemi |
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc) Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V Power Dissipation (Max): 2.3W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7698 | onsemi |
Description: MOSFET N-CH 30V 13.5A/22A 8PQFNVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 30 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86103L | onsemi |
Description: MOSFET N-CH 100V 12A/49A 8PQFNSupplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86322 | onsemi |
Description: MOSFET N-CH 80V 13A/60A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDN8601 | onsemi |
Description: MOSFET N-CH 100V 2.7A SUPERSOT3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDN86246 | onsemi |
Description: MOSFET N-CH 150V 1.6A SUPERSOT3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V |
auf Bestellung 11400 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP12N50NZ | onsemi |
Description: MOSFET N-CH 500V 11.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FDP12N60NZ | onsemi |
Description: MOSFET N-CH 600V 12A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDP7N60NZ | onsemi |
Description: MOSFET N-CH 600V 6.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FDPF5N60NZ | onsemi |
Description: MOSFET N-CH 600V 4.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FDPF7N60NZ | onsemi |
Description: MOSFET N-CH 600V 6.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FDS89141 | onsemi |
Description: MOSFET 2N-CH 100V 3.5A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS8935 | onsemi |
Description: MOSFET 2P-CH 80V 2.1A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 2.1A Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FDT86102LZ | onsemi |
Description: MOSFET N-CH 100V 6.6A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FDT86106LZ | onsemi |
Description: MOSFET N-CH 100V 3.2A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86246 | onsemi |
Description: MOSFET N-CH 150V 2A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH40N60SMD | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 12ns/92ns Switching Energy: 870µJ (on), 260µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 119 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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FJN3303FBU | onsemi |
Description: TRANS NPN 400V 1.5A TO92-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FJN3303FTA | onsemi |
Description: TRANS NPN 400V 1.5A TO92-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FJX992TF | onsemi |
Description: TRANS PNP 120V 0.1A SOT-323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 235 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FL6300AMY | onsemi |
Description: IC LED DRIVER CTRLR PWM 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Internal Switch(s): No Topology: Flyback Supplier Device Package: 8-SOIC Dimming: PWM Voltage - Supply (Min): 10V Voltage - Supply (Max): 25V Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FLS2100XS | onsemi |
Description: IC LED DRIVER RGLTR 10.5A 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Number of Outputs: 1 Type: DC DC Regulator Operating Temperature: -40°C ~ 130°C (TJ) Applications: Lighting Current - Output / Channel: 10.5A Internal Switch(s): Yes Supplier Device Package: 9-SIP Part Status: Active |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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FNA41560B2 | onsemi |
Description: IGBT IPM 600V 15A 26-PWRDIP MODPackaging: Tube Package / Case: 26-PowerDIP Module (1.024", 26.00mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Active Current: 15 A Voltage: 600 V |
auf Bestellung 278 Stücke: Lieferzeit 10-14 Tag (e) |
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FPAB20BH60B | onsemi |
Description: IGBT IPM 600V 20A 27-PWRDIP MODPackaging: Tube Package / Case: 27-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: IGBT Configuration: 1 Phase Voltage - Isolation: 2500Vrms Part Status: Not For New Designs Current: 20 A Voltage: 600 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD30N06TM | onsemi |
Description: MOSFET N-CH 60V 22.7A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FSFR1700XS | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Last Time Buy Power (Watts): 200 W |
auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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FSFR1700XSL | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP (L forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Last Time Buy Power (Watts): 200 W |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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FSFR1800XS | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Last Time Buy Power (Watts): 260 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FSFR1800XSL | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP (L forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Obsolete Power (Watts): 260 W |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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FSFR2100XSL | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP (L forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Obsolete Power (Watts): 400 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FSQ0265RLX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8LSOPPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Frequency - Switching: 55kHz ~ 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: 8-LSOP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 12 V Control Features: Sync Part Status: Last Time Buy Power (Watts): 20 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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FUSB2805MLX | onsemi |
Description: IC TRANSCEIVER FULL 1/1 32MLPPackaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 4.5V Number of Drivers/Receivers: 1/1 Data Rate: 480Mbps Protocol: USB 2.0 Supplier Device Package: 32-MLP (5x5) Duplex: Full Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NBXDBA014LN1TAG |
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Hersteller: onsemi
Description: IC OSC XTAL DUAL FREQ 6CLCC
Description: IC OSC XTAL DUAL FREQ 6CLCC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NOIH2SM1000S-HHC |
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Hersteller: onsemi
Description: IC SPACE IMAGE SENSOR 84-JLCC
Packaging: Tray
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Pixel Size: 18µm x 18µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC (26.8x26.8)
Frames per Second: 10.0
Description: IC SPACE IMAGE SENSOR 84-JLCC
Packaging: Tray
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Pixel Size: 18µm x 18µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC (26.8x26.8)
Frames per Second: 10.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NOIL1SE3000A-GDC |
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Hersteller: onsemi
Description: IC IMAGE SENSOR 3MP 369-PGA
Frames per Second: 485
Supplier Device Package: 369-µPGA (31x27)
Active Pixel Array: 1696H x 1710V
Pixel Size: 8µm x 8µm
Voltage - Supply: 2.5V, 3.3V
Operating Temperature: -40°C ~ 70°C (TJ)
Type: CMOS
Package / Case: 369-BFCPGA
Packaging: Bulk
Description: IC IMAGE SENSOR 3MP 369-PGA
Frames per Second: 485
Supplier Device Package: 369-µPGA (31x27)
Active Pixel Array: 1696H x 1710V
Pixel Size: 8µm x 8µm
Voltage - Supply: 2.5V, 3.3V
Operating Temperature: -40°C ~ 70°C (TJ)
Type: CMOS
Package / Case: 369-BFCPGA
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP1G57L6X |
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Hersteller: onsemi
Description: IC GATE UNIV 2INPUT 6-MICROPAK
Number of Circuits: 1
Supplier Device Package: 6-MicroPak
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Description: IC GATE UNIV 2INPUT 6-MICROPAK
Number of Circuits: 1
Supplier Device Package: 6-MicroPak
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AUP1T97L6X |
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Hersteller: onsemi
Description: IC TRANSLATOR UNIDIR 6MICROPAK
Number of Circuits: 1
Voltage - VCCB: 2.3 V ~ 3.6 V
Voltage - VCCA: 1.8 V ~ 2.7 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 6-MicroPak
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-UFDFN
Features: Configurable Gate Logic Functions
Packaging: Tape & Reel (TR)
Description: IC TRANSLATOR UNIDIR 6MICROPAK
Number of Circuits: 1
Voltage - VCCB: 2.3 V ~ 3.6 V
Voltage - VCCA: 1.8 V ~ 2.7 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 6-MicroPak
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-UFDFN
Features: Configurable Gate Logic Functions
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC547B_J35Z |
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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| FAN4146ESX |
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Hersteller: onsemi
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Supplier Device Package: SuperSOT™-6
Current - Supply: 400µA
Applications: Ground Fault Protection
Operating Temperature: -25°C ~ 80°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Supplier Device Package: SuperSOT™-6
Current - Supply: 400µA
Applications: Ground Fault Protection
Operating Temperature: -25°C ~ 80°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.5 EUR |
| FAN4147SX |
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Hersteller: onsemi
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Supplier Device Package: SuperSOT™-6
Current - Supply: 400µA
Applications: Ground Fault Protection
Operating Temperature: -35°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: IC CTLR LOW PWR AC GFI 6-SSOT
Supplier Device Package: SuperSOT™-6
Current - Supply: 400µA
Applications: Ground Fault Protection
Operating Temperature: -35°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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| FAN4800ASNY |
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Hersteller: onsemi
Description: IC PFC CTR AV CURR 268KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 240kHz ~ 268kHz
Mode: Average Current
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Current - Startup: 30 µA
Description: IC PFC CTR AV CURR 268KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 240kHz ~ 268kHz
Mode: Average Current
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Current - Startup: 30 µA
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| FAN5405UCX |
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Hersteller: onsemi
Description: IC BATT CHG LI-ION 1CELL 20WLCSP
Part Status: Obsolete
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.5V (Max)
Voltage - Supply (Max): 6V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Programmable Features: Current, Timer, Voltage
Charge Current - Max: 1.25A
Supplier Device Package: 20-WLCSP (1.96x1.56)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -30°C ~ 85°C (TA)
Interface: I2C, USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC BATT CHG LI-ION 1CELL 20WLCSP
Part Status: Obsolete
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.5V (Max)
Voltage - Supply (Max): 6V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Programmable Features: Current, Timer, Voltage
Charge Current - Max: 1.25A
Supplier Device Package: 20-WLCSP (1.96x1.56)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -30°C ~ 85°C (TA)
Interface: I2C, USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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| FAN6204MY |
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Hersteller: onsemi
Description: IC CTLR SR SYNC RECT LLC 8SOIC
DigiKey Programmable: Not Verified
Current - Supply: 7 mA
Supplier Device Package: 8-SOIC
Applications: Secondary-Side Controller, Synchronous Rectifier
Voltage - Supply: 4.5V ~ 28.5V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC CTLR SR SYNC RECT LLC 8SOIC
DigiKey Programmable: Not Verified
Current - Supply: 7 mA
Supplier Device Package: 8-SOIC
Applications: Secondary-Side Controller, Synchronous Rectifier
Voltage - Supply: 4.5V ~ 28.5V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| FAN7190M-F085 |
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOP
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC GATE DRVR HALF-BRIDGE 8SOP
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| FAN7389M |
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Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 24SOP
Part Status: Obsolete
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 24-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 24SOP
Part Status: Obsolete
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 24-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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| FAN7930BM |
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Hersteller: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Current - Startup: 120 µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM)
Frequency - Switching: 250kHz ~ 350kHz
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Current - Startup: 120 µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM)
Frequency - Switching: 250kHz ~ 350kHz
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| FAN7930BMX |
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Hersteller: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
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| FAN7930CM |
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Hersteller: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
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| FAN7930CMX |
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Hersteller: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
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| FCH47N60NF |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 45.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CH 600V 45.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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| FDB016N04AL7 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 2.88 EUR |
| FDD7N25LZTM |
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Hersteller: onsemi
Description: MOSFET N-CH 250V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Description: MOSFET N-CH 250V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.53 EUR |
| 5000+ | 0.49 EUR |
| 7500+ | 0.47 EUR |
| FDD850N10L |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 15.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
Description: MOSFET N-CH 100V 15.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.72 EUR |
| 5000+ | 0.69 EUR |
| FDD86102LZ |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 8A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V
Description: MOSFET N-CH 100V 8A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.98 EUR |
| 5000+ | 0.93 EUR |
| FDD86250 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 8A/50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 150V 8A/50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.32 EUR |
| FDMC2514SDC |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 24A/40A DLCOOL33
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Dual Cool ™ 33
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 3W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 24A/40A DLCOOL33
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Dual Cool ™ 33
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 3W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC3020DC |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Dual Cool ™ 33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Dual Cool ™ 33
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC7696 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 12A/20A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 12A/20A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86102L |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC8622 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 4A/16A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 4A/16A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.99 EUR |
| 6000+ | 0.97 EUR |
| FDMC86244 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.74 EUR |
| 6000+ | 0.69 EUR |
| FDMS7698 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.46 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.41 EUR |
| FDMS86103L |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 12A/49A 8PQFN
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 100V 12A/49A 8PQFN
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.75 EUR |
| FDMS86322 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: MOSFET N-CH 80V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.56 EUR |
| FDN8601 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.62 EUR |
| 6000+ | 0.6 EUR |
| FDN86246 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 150V 1.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V
Description: MOSFET N-CH 150V 1.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V
auf Bestellung 11400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.79 EUR |
| 6000+ | 0.74 EUR |
| FDP12N50NZ |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 500V 11.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V
Description: MOSFET N-CH 500V 11.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| FDP12N60NZ |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
Produkt ist nicht verfügbar
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| FDP7N60NZ |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 600V 6.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Description: MOSFET N-CH 600V 6.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDPF5N60NZ |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDPF7N60NZ |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 600V 6.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Description: MOSFET N-CH 600V 6.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS89141 |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.87 EUR |
| FDS8935 |
![]() |
Hersteller: onsemi
Description: MOSFET 2P-CH 80V 2.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V
Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2P-CH 80V 2.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V
Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDT86102LZ |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 6.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V
Description: MOSFET N-CH 100V 6.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDT86106LZ |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.8 EUR |
| FDT86246 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.74 EUR |
| FGH40N60SMD |
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Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.4 EUR |
| FJN3303FBU |
![]() |
Hersteller: onsemi
Description: TRANS NPN 400V 1.5A TO92-3
Description: TRANS NPN 400V 1.5A TO92-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJN3303FTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 400V 1.5A TO92-3
Description: TRANS NPN 400V 1.5A TO92-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJX992TF |
![]() |
Hersteller: onsemi
Description: TRANS PNP 120V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 235 mW
Description: TRANS PNP 120V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 235 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FL6300AMY |
![]() |
Hersteller: onsemi
Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 10V
Voltage - Supply (Max): 25V
Part Status: Obsolete
Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 10V
Voltage - Supply (Max): 25V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FLS2100XS |
![]() |
Hersteller: onsemi
Description: IC LED DRIVER RGLTR 10.5A 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Number of Outputs: 1
Type: DC DC Regulator
Operating Temperature: -40°C ~ 130°C (TJ)
Applications: Lighting
Current - Output / Channel: 10.5A
Internal Switch(s): Yes
Supplier Device Package: 9-SIP
Part Status: Active
Description: IC LED DRIVER RGLTR 10.5A 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Number of Outputs: 1
Type: DC DC Regulator
Operating Temperature: -40°C ~ 130°C (TJ)
Applications: Lighting
Current - Output / Channel: 10.5A
Internal Switch(s): Yes
Supplier Device Package: 9-SIP
Part Status: Active
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.03 EUR |
| 10+ | 9.01 EUR |
| 25+ | 8.52 EUR |
| 100+ | 7 EUR |
| FNA41560B2 |
![]() |
Hersteller: onsemi
Description: IGBT IPM 600V 15A 26-PWRDIP MOD
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Description: IGBT IPM 600V 15A 26-PWRDIP MOD
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 24.69 EUR |
| 12+ | 17.06 EUR |
| 108+ | 13.31 EUR |
| FPAB20BH60B |
![]() |
Hersteller: onsemi
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Part Status: Not For New Designs
Current: 20 A
Voltage: 600 V
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Part Status: Not For New Designs
Current: 20 A
Voltage: 600 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 26.51 EUR |
| FQD30N06TM |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.7 EUR |
| FSFR1700XS |
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Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.15 EUR |
| 10+ | 6.42 EUR |
| 25+ | 6.07 EUR |
| 100+ | 5.26 EUR |
| FSFR1700XSL |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.83 EUR |
| 10+ | 5.23 EUR |
| FSFR1800XS |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 260 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 260 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSFR1800XSL |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 260 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 260 W
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.52 EUR |
| 19+ | 3.18 EUR |
| FSFR2100XSL |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 400 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 400 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSQ0265RLX |
![]() |
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 20 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FUSB2805MLX |
![]() |
Hersteller: onsemi
Description: IC TRANSCEIVER FULL 1/1 32MLP
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.5V
Number of Drivers/Receivers: 1/1
Data Rate: 480Mbps
Protocol: USB 2.0
Supplier Device Package: 32-MLP (5x5)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 32MLP
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.5V
Number of Drivers/Receivers: 1/1
Data Rate: 480Mbps
Protocol: USB 2.0
Supplier Device Package: 32-MLP (5x5)
Duplex: Full
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

























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