| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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NCV887740D1R2G | onsemi |
 Description: IC REG CTRLR BOOST 8SOICNumber of Outputs: 1 Clock Sync: No Duty Cycle (Max): 83% Output Phases: 1 Control Features: Current Limit, Enable, Frequency Control Synchronous Rectifier: No Supplier Device Package: 8-SOIC Voltage - Supply (Vcc/Vdd): 2V ~ 40V Topology: Boost Frequency - Switching: 170kHz Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Function: Step-Up Mounting Type: Surface Mount Output Type: Transistor Driver Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV890203MWTXG | onsemi |
Description: IC REG BUCK ADJ 2A 10DFN Qualification: AEC-Q100 Grade: Automotive Voltage - Output (Min/Fixed): 0.8V Voltage - Input (Min): 4.5V Voltage - Output (Max): 34V Synchronous Rectifier: No Supplier Device Package: 10-DFN (3x3) Topology: Buck Voltage - Input (Max): 36V Frequency - Switching: 2MHz Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 2A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 10-VFDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NDD01N60-1G | onsemi |
Description: MOSFET N-CH 600V 1.5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NDD01N60T4G | onsemi |
Description: MOSFET N-CH 600V 1.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NDD02N40-1G | onsemi |
Description: MOSFET N-CH 400V 1.7A IPAK Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: I-PAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NDD02N40T4G | onsemi |
Description: MOSFET N-CH 400V 1.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NDD60N360U1-1G | onsemi |
Description: MOSFET N-CH 600V 11A IPAK Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I-PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NDD60N360U1-35G | onsemi |
Description: MOSFET N-CH 600V 11A IPAK Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NDT01N60T1G | onsemi |
Description: MOSFET N-CH 600V 400MA SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: SOT-223 (TO-261) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NDT02N40T1G | onsemi |
Description: MOSFET N-CH 400V 400MA SOT223 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB10N60FG | onsemi |
Description: IGBT 600V 20A TO-220F-3FS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A Supplier Device Package: TO-220F-3FS Td (on/off) @ 25°C: 40ns/145ns Test Condition: 300V, 10A, 30Ohm, 15V Gate Charge: 55 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB15N120IHRWG | onsemi |
Description: IGBT TRENCH FS 1200V 30A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/170ns Switching Energy: 340µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 160 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 333 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB15N135IHRWG | onsemi |
Description: IGBT TRENCH FS 1350V 30A TO-247 Power - Max: 357 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector (Ic) (Max): 30 A Gate Charge: 156 nC Test Condition: 600V, 15A, 10Ohm, 15V Switching Energy: 420µJ (off) Td (on/off) @ 25°C: -/170ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 15A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB20N120IHSWG | onsemi |
Description: IGBT 1200V 20A TO247 Power - Max: 156 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 40 A Part Status: Obsolete Gate Charge: 155 nC Test Condition: 600V, 20A, 10Ohm, 15V Switching Energy: 650µJ (off) Td (on/off) @ 25°C: -/160ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NGTB20N60L2TF1G | onsemi |
Description: IGBT 600V 40A TO-3PF-3 Package / Case: TO-3PFM, SC-93-3 Packaging: Tube Power - Max: 64 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Gate Charge: 84 nC Test Condition: 300V, 20A, 30Ohm, 15V Td (on/off) @ 25°C: 60ns/193ns Supplier Device Package: TO-3PF-3 Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A Reverse Recovery Time (trr): 70 ns Input Type: Standard Operating Temperature: 175°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NGTB25N120FLWG | onsemi |
Description: IGBT TRENCH FS 1200V 50A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 240 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 91ns/228ns Switching Energy: 1.5mJ (on), 950µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 220 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 192 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB30N120IHLWG | onsemi |
Description: IGBT TRENCH FS 1200V 60A TO-247 Power - Max: 260 W Current - Collector Pulsed (Icm): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 60 A Part Status: Obsolete Gate Charge: 420 nC Test Condition: 600V, 30A, 10Ohm, 15V Switching Energy: 1mJ (off) Td (on/off) @ 25°C: -/360ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB30N120IHSWG | onsemi |
Description: IGBT TRENCH FS 1200V 60A TO-247 Test Condition: 600V, 30A, 10Ohm, 15V Switching Energy: 1mJ (off) Td (on/off) @ 25°C: -/210ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 192 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 60 A Part Status: Obsolete Gate Charge: 220 nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB30N120LWG | onsemi |
Description: IGBT TRENCH FS 1200V 60A TO-247 Power - Max: 560 W Current - Collector Pulsed (Icm): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 60 A Part Status: Obsolete Gate Charge: 420 nC Test Condition: 600V, 30A, 10Ohm, 15V Switching Energy: 4.4mJ (on), 1mJ (off) Td (on/off) @ 25°C: 136ns/360ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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NGTB40N120FLWG | onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247 Power - Max: 260 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 80 A Part Status: Obsolete Gate Charge: 415 nC Test Condition: 600V, 40A, 10Ohm, 15V Switching Energy: 2.6mJ (on), 1.6mJ (off) Td (on/off) @ 25°C: 130ns/385ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Reverse Recovery Time (trr): 200 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB40N120LWG | onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247 Part Status: Obsolete Gate Charge: 420 nC Test Condition: 600V, 40A, 10Ohm, 15V Switching Energy: 5.5mJ (on), 1.4mJ (off) Td (on/off) @ 25°C: 140ns/360ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 260 W Current - Collector Pulsed (Icm): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 80 A |
Produkt ist nicht verfügbar |
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NGTB40N60IHLWG | onsemi |
Description: IGBT TRENCH FS 600V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 400 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 400µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
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NGTB50N60FLWG | onsemi |
Description: IGBT TRENCH FS 600V 100A TO-247 Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Reverse Recovery Time (trr): 85 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 223 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Part Status: Obsolete Gate Charge: 310 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 1.1mJ (on), 600µJ (off) Td (on/off) @ 25°C: 116ns/292ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 |
Produkt ist nicht verfügbar |
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NGTB50N60L2WG | onsemi |
Description: IGBT TRENCH FS 600V 100A TO-247 Power - Max: 500 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Gate Charge: 310 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 800µJ (on), 600µJ (off) Td (on/off) @ 25°C: 110ns/270ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Reverse Recovery Time (trr): 67 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB75N60FL2WG | onsemi |
Description: IGBT TRENCH FS 600V 100A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 110ns/270ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 595 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB75N65FL2WG | onsemi |
Description: IGBT TRENCH FS 650V 100A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 110ns/270ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 595 W |
auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTG50N60FLWG | onsemi |
Description: IGBT TRENCH 600V 100A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Td (on/off) @ 25°C: 116ns/292ns Switching Energy: 1.1mJ (on), 600µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 223 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NHPJ08S600G | onsemi |
Description: DIODE GP 600V 8A TO220-2FP Current - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
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NHPJ15S600G | onsemi |
Description: DIODE GP 600V 15A TO220-2FP Package / Case: TO-220-2 Full Pack Packaging: Tube Current - Reverse Leakage @ Vr: 60 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-2 Full Pack Current - Average Rectified (Io): 15A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NHPV08S600G | onsemi |
Description: DIODE GEN PURP 600V 8A TO220-2 Current - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 8A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 489 Stücke: Lieferzeit 10-14 Tag (e) |
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NHPV15S600G | onsemi |
Description: DIODE GEN PURP 600V 15A TO220-2 Current - Reverse Leakage @ Vr: 60 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 15A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NIS5232MN1TXG | onsemi |
Description: IC ELECTRONIC FUSE 10DFN Part Status: Not For New Designs Supplier Device Package: 10-DFN (3x3) Operating Temperature: -40°C ~ 150°C Current - Output: 4.2A Voltage - Input: 9V ~ 18V Function: Electronic Fuse Mounting Type: Surface Mount Sensing Method: High-Side Package / Case: 10-VFDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NJVMJD112G | onsemi |
Description: TRANS NPN DARL 100V 2A DPAK Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: DPAK Frequency - Transition: 25MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Current - Collector Cutoff (Max): 20µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
auf Bestellung 6246 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVMJD3055T4G | onsemi |
Description: TRANS NPN 60V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
auf Bestellung 62500 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVMJD31CG | onsemi |
Description: TRANS NPN 100V 3A DPAK Power - Max: 1.56 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: DPAK Frequency - Transition: 3MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Current - Collector Cutoff (Max): 50µA Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
auf Bestellung 775 Stücke: Lieferzeit 10-14 Tag (e) |
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NJW44H11G | onsemi |
Description: TRANS NPN 80V 10A TO-3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V Frequency - Transition: 85MHz Supplier Device Package: TO-3P-3L Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 120 W |
auf Bestellung 168 Stücke: Lieferzeit 10-14 Tag (e) |
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NL17SH02P5T5G | onsemi |
Description: IC GATE NOR 1CH 2-INP SOT953 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Supplier Device Package: SOT-953 Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NOR Gate Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NL17SH34P5T5G | onsemi |
Description: IC BUF NON-INVERT 5.5V SOT953 Supplier Device Package: SOT-953 Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: SOT-953 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NL17SZ02P5T5G | onsemi |
Description: IC GATE NOR 1CH 2-INP SOT953 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Part Status: Obsolete Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Supplier Device Package: SOT-953 Number of Inputs: 2 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 125°C Logic Type: NOR Gate |
auf Bestellung 144000 Stücke: Lieferzeit 10-14 Tag (e) |
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NL17SZ07P5T5G | onsemi |
Description: IC BUFF 1.65V SOT-953 Output Type: Open Drain Part Status: Obsolete Supplier Device Package: SOT-953 Current - Output High, Low: -, 24mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NL17SZ08P5T5G | onsemi |
Description: IC GATE AND 1CH 2-INP SOT953 Packaging: Tape & Reel (TR) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-953 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 56000 Stücke: Lieferzeit 10-14 Tag (e) |
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NL17SZ14P5T5G | onsemi |
Description: IC INVERT SCHMITT 1CH 1IN SOT953 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF Input Logic Level - Low: 0.2V ~ 1.2V Input Logic Level - High: 1.4V ~ 3.6V Supplier Device Package: SOT-953 Number of Inputs: 1 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: SOT-953 Features: Schmitt Trigger Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NL17SZ32P5T5G | onsemi |
Description: IC GATE OR 1CH 2-INP SOT953 Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Supplier Device Package: SOT-953 Number of Inputs: 2 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: OR Gate Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Tape & Reel (TR) Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLSV4T240EDR2G | onsemi |
Description: IC TRNSLTR UNIDIRECTIONAL 14SOIC Number of Circuits: 1 Part Status: Active Voltage - VCCB: 0.9 V ~ 4.5 V Voltage - VCCA: 0.9 V ~ 4.5 V Channels per Circuit: 4 Translator Type: Voltage Level Channel Type: Unidirectional Supplier Device Package: 14-SOIC Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Output Type: Tri-State, Inverted Package / Case: 14-SOIC (0.154", 3.90mm Width) Features: Over Voltage Protection, Power-Off Protection Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLSX0102FCT1G | onsemi |
Description: IC XLTR VL BIDIR 8-FLIPCHIP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-XFBGA, FCBGA Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 24Mbps Supplier Device Package: 8-FlipChip Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.5 V ~ 5.5 V Voltage - VCCB: 1.5 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLSX0102FCT2G | onsemi |
Description: IC XLTR VL BIDIR 8-FLIPCHIP Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-XFBGA, FCBGA Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 24Mbps Supplier Device Package: 8-FlipChip Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.5 V ~ 5.5 V Voltage - VCCB: 1.5 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLSX4302EBMUTCG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UQFN Packaging: Tape & Reel (TR) Number of Circuits: 1 Part Status: Active Voltage - VCCB: 1.5 V ~ 5.5 V Voltage - VCCA: 1.5 V ~ 5.5 V Channels per Circuit: 2 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 8-UQFN (1.4x1.2) Data Rate: 20Mbps Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 8-UFQFN Features: Auto-Direction Sensing |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLV74HC238ADTR2G | onsemi |
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLVVHC1G132DFT2G | onsemi |
Description: IC GATE NAND 1CH 2-INP SC88A Features: Schmitt Trigger Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Current - Quiescent (Max): 1 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Input Logic Level - Low: 0.65V ~ 1.45V Input Logic Level - High: 2.25V ~ 3.7V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLVVHC1G132DTT1G | onsemi |
Description: IC GATE NAND 1CH 2-INP 5TSOP Qualification: AEC-Q100 Grade: Automotive Current - Quiescent (Max): 1 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Input Logic Level - Low: 0.65V ~ 1.45V Input Logic Level - High: 2.25V ~ 3.7V Supplier Device Package: 5-TSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Features: Schmitt Trigger Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLVVHC1G86DTT1G | onsemi |
Description: IC GATE XOR 1CH 2-INP 5TSOP Qualification: AEC-Q100 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Grade: Automotive Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Input Logic Level - Low: 0.5V ~ 1.65V Input Logic Level - High: 1.5V ~ 3.85V Supplier Device Package: 5-TSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NRVB10100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 10A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVB10100MFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 10A 5DFN Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NRVB1045MFST1G | onsemi |
Description: DIODE SCHOTTKY 45V 10A 5DFN Current - Reverse Leakage @ Vr: 500 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NRVB440MFST3G | onsemi |
Description: DIODE SCHOTTKY 40V 4A 5DFN Current - Reverse Leakage @ Vr: 800 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NRVB440MFSWFT1G | onsemi |
Description: DIODE SCHOTTKY 40V 4A 5DFN Current - Reverse Leakage @ Vr: 800 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NRVB440MFSWFT3G | onsemi |
Description: DIODE SCHOTTKY 40V 4A 5DFN Current - Reverse Leakage @ Vr: 800 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVB5100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 5A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVB540MFST1G | onsemi |
Description: DIODE SCHOTTKY 40V 5A 5DFN Current - Reverse Leakage @ Vr: 2 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVB8H100MFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 8A 5DFN Current - Reverse Leakage @ Vr: 2 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 8A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCV887740D1R2G |
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Hersteller: onsemi
Description: IC REG CTRLR BOOST 8SOIC
Number of Outputs: 1
Clock Sync: No
Duty Cycle (Max): 83%
Output Phases: 1
Control Features: Current Limit, Enable, Frequency Control
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 2V ~ 40V
Topology: Boost
Frequency - Switching: 170kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Up
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC REG CTRLR BOOST 8SOIC
Number of Outputs: 1
Clock Sync: No
Duty Cycle (Max): 83%
Output Phases: 1
Control Features: Current Limit, Enable, Frequency Control
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 2V ~ 40V
Topology: Boost
Frequency - Switching: 170kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Up
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV890203MWTXG |
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Hersteller: onsemi
Description: IC REG BUCK ADJ 2A 10DFN
Qualification: AEC-Q100
Grade: Automotive
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 34V
Synchronous Rectifier: No
Supplier Device Package: 10-DFN (3x3)
Topology: Buck
Voltage - Input (Max): 36V
Frequency - Switching: 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG BUCK ADJ 2A 10DFN
Qualification: AEC-Q100
Grade: Automotive
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 34V
Synchronous Rectifier: No
Supplier Device Package: 10-DFN (3x3)
Topology: Buck
Voltage - Input (Max): 36V
Frequency - Switching: 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 2A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDD01N60-1G |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 1.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Description: MOSFET N-CH 600V 1.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDD01N60T4G |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Description: MOSFET N-CH 600V 1.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
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| NDD02N40-1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 400V 1.7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 400V 1.7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| NDD02N40T4G |
|
Hersteller: onsemi
Description: MOSFET N-CH 400V 1.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 400V 1.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 121 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 220mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| NDD60N360U1-1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 600V 11A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| NDD60N360U1-35G |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 600V 11A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Stück im Wert von UAH
| NDT01N60T1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 400MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Description: MOSFET N-CH 600V 400MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
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| NDT02N40T1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 400V 400MA SOT223
Description: MOSFET N-CH 400V 400MA SOT223
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Stück im Wert von UAH
| NGTB10N60FG |
|
Hersteller: onsemi
Description: IGBT 600V 20A TO-220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: TO-220F-3FS
Td (on/off) @ 25°C: 40ns/145ns
Test Condition: 300V, 10A, 30Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 40 W
Description: IGBT 600V 20A TO-220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: TO-220F-3FS
Td (on/off) @ 25°C: 40ns/145ns
Test Condition: 300V, 10A, 30Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 40 W
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Stück im Wert von UAH
| NGTB15N120IHRWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/170ns
Switching Energy: 340µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 333 W
Description: IGBT TRENCH FS 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/170ns
Switching Energy: 340µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 333 W
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Stück im Wert von UAH
| NGTB15N135IHRWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1350V 30A TO-247
Power - Max: 357 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 156 nC
Test Condition: 600V, 15A, 10Ohm, 15V
Switching Energy: 420µJ (off)
Td (on/off) @ 25°C: -/170ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 15A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 1350V 30A TO-247
Power - Max: 357 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 156 nC
Test Condition: 600V, 15A, 10Ohm, 15V
Switching Energy: 420µJ (off)
Td (on/off) @ 25°C: -/170ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 15A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NGTB20N120IHSWG |
|
Hersteller: onsemi
Description: IGBT 1200V 20A TO247
Power - Max: 156 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 155 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 650µJ (off)
Td (on/off) @ 25°C: -/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 1200V 20A TO247
Power - Max: 156 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Obsolete
Gate Charge: 155 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 650µJ (off)
Td (on/off) @ 25°C: -/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NGTB20N60L2TF1G |
|
Hersteller: onsemi
Description: IGBT 600V 40A TO-3PF-3
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 64 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 84 nC
Test Condition: 300V, 20A, 30Ohm, 15V
Td (on/off) @ 25°C: 60ns/193ns
Supplier Device Package: TO-3PF-3
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Description: IGBT 600V 40A TO-3PF-3
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Power - Max: 64 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 84 nC
Test Condition: 300V, 20A, 30Ohm, 15V
Td (on/off) @ 25°C: 60ns/193ns
Supplier Device Package: TO-3PF-3
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
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Stück im Wert von UAH
| NGTB25N120FLWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 91ns/228ns
Switching Energy: 1.5mJ (on), 950µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Description: IGBT TRENCH FS 1200V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 91ns/228ns
Switching Energy: 1.5mJ (on), 950µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
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Stück im Wert von UAH
| NGTB30N120IHLWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 60A TO-247
Power - Max: 260 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 420 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 1mJ (off)
Td (on/off) @ 25°C: -/360ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 1200V 60A TO-247
Power - Max: 260 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 420 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 1mJ (off)
Td (on/off) @ 25°C: -/360ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NGTB30N120IHSWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 60A TO-247
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 1mJ (off)
Td (on/off) @ 25°C: -/210ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 192 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 220 nC
Description: IGBT TRENCH FS 1200V 60A TO-247
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 1mJ (off)
Td (on/off) @ 25°C: -/210ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 192 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 220 nC
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| NGTB30N120LWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 60A TO-247
Power - Max: 560 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 420 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 4.4mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 136ns/360ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 1200V 60A TO-247
Power - Max: 560 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 420 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 4.4mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 136ns/360ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB40N120FLWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Power - Max: 260 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Part Status: Obsolete
Gate Charge: 415 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 2.6mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 130ns/385ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 1200V 80A TO-247
Power - Max: 260 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Part Status: Obsolete
Gate Charge: 415 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 2.6mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 130ns/385ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Reverse Recovery Time (trr): 200 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB40N120LWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Part Status: Obsolete
Gate Charge: 420 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 5.5mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 140ns/360ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 260 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Description: IGBT TRENCH FS 1200V 80A TO-247
Part Status: Obsolete
Gate Charge: 420 nC
Test Condition: 600V, 40A, 10Ohm, 15V
Switching Energy: 5.5mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 140ns/360ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 260 W
Current - Collector Pulsed (Icm): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 80 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB40N60IHLWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB50N60FLWG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 600V 100A TO-247
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 85 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 223 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Gate Charge: 310 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.1mJ (on), 600µJ (off)
Td (on/off) @ 25°C: 116ns/292ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Description: IGBT TRENCH FS 600V 100A TO-247
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Reverse Recovery Time (trr): 85 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 223 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Obsolete
Gate Charge: 310 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.1mJ (on), 600µJ (off)
Td (on/off) @ 25°C: 116ns/292ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB50N60L2WG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 600V 100A TO-247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 310 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 800µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 110ns/270ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Reverse Recovery Time (trr): 67 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 600V 100A TO-247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 310 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 800µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 110ns/270ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Reverse Recovery Time (trr): 67 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB75N60FL2WG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB75N65FL2WG |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 110ns/270ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 595 W
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.14 EUR |
| 30+ | 10.71 EUR |
| 120+ | 9.09 EUR |
| NGTG50N60FLWG |
|
Hersteller: onsemi
Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NHPJ08S600G |
|
Hersteller: onsemi
Description: DIODE GP 600V 8A TO220-2FP
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE GP 600V 8A TO220-2FP
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NHPJ15S600G |
|
Hersteller: onsemi
Description: DIODE GP 600V 15A TO220-2FP
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Description: DIODE GP 600V 15A TO220-2FP
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2 Full Pack
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NHPV08S600G |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 600V 8A TO220-2
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 10+ | 3 EUR |
| 25+ | 2.84 EUR |
| 100+ | 2.18 EUR |
| 250+ | 1.93 EUR |
| NHPV15S600G |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 15A TO220-2
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Description: DIODE GEN PURP 600V 15A TO220-2
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NIS5232MN1TXG |
|
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Part Status: Not For New Designs
Supplier Device Package: 10-DFN (3x3)
Operating Temperature: -40°C ~ 150°C
Current - Output: 4.2A
Voltage - Input: 9V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Sensing Method: High-Side
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC ELECTRONIC FUSE 10DFN
Part Status: Not For New Designs
Supplier Device Package: 10-DFN (3x3)
Operating Temperature: -40°C ~ 150°C
Current - Output: 4.2A
Voltage - Input: 9V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Sensing Method: High-Side
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NJVMJD112G |
|
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A DPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 25MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: TRANS NPN DARL 100V 2A DPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 25MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 6246 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.03 EUR |
| 75+ | 0.87 EUR |
| 150+ | 0.77 EUR |
| 525+ | 0.64 EUR |
| 1050+ | 0.58 EUR |
| 2025+ | 0.54 EUR |
| 5025+ | 0.48 EUR |
| NJVMJD3055T4G |
|
Hersteller: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 62500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.79 EUR |
| 5000+ | 0.73 EUR |
| 7500+ | 0.69 EUR |
| NJVMJD31CG |
|
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: TRANS NPN 100V 3A DPAK
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 75+ | 0.8 EUR |
| 150+ | 0.71 EUR |
| NJW44H11G |
|
Hersteller: onsemi
Description: TRANS NPN 80V 10A TO-3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V
Frequency - Transition: 85MHz
Supplier Device Package: TO-3P-3L
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 120 W
Description: TRANS NPN 80V 10A TO-3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V
Frequency - Transition: 85MHz
Supplier Device Package: TO-3P-3L
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 120 W
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.78 EUR |
| 30+ | 3.71 EUR |
| 120+ | 3.03 EUR |
| NL17SH02P5T5G |
|
Hersteller: onsemi
Description: IC GATE NOR 1CH 2-INP SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Description: IC GATE NOR 1CH 2-INP SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NOR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NL17SH34P5T5G |
|
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V SOT953
Supplier Device Package: SOT-953
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Description: IC BUF NON-INVERT 5.5V SOT953
Supplier Device Package: SOT-953
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NL17SZ02P5T5G |
|
Hersteller: onsemi
Description: IC GATE NOR 1CH 2-INP SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 125°C
Logic Type: NOR Gate
Description: IC GATE NOR 1CH 2-INP SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 125°C
Logic Type: NOR Gate
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.11 EUR |
| 16000+ | 0.096 EUR |
| 24000+ | 0.09 EUR |
| 40000+ | 0.086 EUR |
| 56000+ | 0.082 EUR |
| 80000+ | 0.079 EUR |
| NL17SZ07P5T5G |
|
Hersteller: onsemi
Description: IC BUFF 1.65V SOT-953
Output Type: Open Drain
Part Status: Obsolete
Supplier Device Package: SOT-953
Current - Output High, Low: -, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Description: IC BUFF 1.65V SOT-953
Output Type: Open Drain
Part Status: Obsolete
Supplier Device Package: SOT-953
Current - Output High, Low: -, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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| NL17SZ08P5T5G |
|
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.079 EUR |
| NL17SZ14P5T5G |
|
Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1IN SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Input Logic Level - Low: 0.2V ~ 1.2V
Input Logic Level - High: 1.4V ~ 3.6V
Supplier Device Package: SOT-953
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SOT-953
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Description: IC INVERT SCHMITT 1CH 1IN SOT953
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Input Logic Level - Low: 0.2V ~ 1.2V
Input Logic Level - High: 1.4V ~ 3.6V
Supplier Device Package: SOT-953
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: SOT-953
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| NL17SZ32P5T5G |
|
Hersteller: onsemi
Description: IC GATE OR 1CH 2-INP SOT953
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 2-INP SOT953
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Supplier Device Package: SOT-953
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLSV4T240EDR2G |
|
Hersteller: onsemi
Description: IC TRNSLTR UNIDIRECTIONAL 14SOIC
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 4
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 14-SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Inverted
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Over Voltage Protection, Power-Off Protection
Packaging: Tape & Reel (TR)
Description: IC TRNSLTR UNIDIRECTIONAL 14SOIC
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 4
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 14-SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Inverted
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Features: Over Voltage Protection, Power-Off Protection
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NLSX0102FCT1G |
|
Hersteller: onsemi
Description: IC XLTR VL BIDIR 8-FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLSX0102FCT2G |
|
Hersteller: onsemi
Description: IC XLTR VL BIDIR 8-FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-FLIPCHIP
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-XFBGA, FCBGA
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 8-FlipChip
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NLSX4302EBMUTCG |
|
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.5 V ~ 5.5 V
Voltage - VCCA: 1.5 V ~ 5.5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-UQFN (1.4x1.2)
Data Rate: 20Mbps
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-UFQFN
Features: Auto-Direction Sensing
Description: IC TRANSLTR BIDIRECTIONAL 8UQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.5 V ~ 5.5 V
Voltage - VCCA: 1.5 V ~ 5.5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-UQFN (1.4x1.2)
Data Rate: 20Mbps
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-UFQFN
Features: Auto-Direction Sensing
Produkt ist nicht verfügbar
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| NLV74HC238ADTR2G |
|
Hersteller: onsemi
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Description: IC DECODER/DEMUX 1X3:8 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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| NLVVHC1G132DFT2G |
|
Hersteller: onsemi
Description: IC GATE NAND 1CH 2-INP SC88A
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Input Logic Level - Low: 0.65V ~ 1.45V
Input Logic Level - High: 2.25V ~ 3.7V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Description: IC GATE NAND 1CH 2-INP SC88A
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Input Logic Level - Low: 0.65V ~ 1.45V
Input Logic Level - High: 2.25V ~ 3.7V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Produkt ist nicht verfügbar
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| NLVVHC1G132DTT1G |
|
Hersteller: onsemi
Description: IC GATE NAND 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Input Logic Level - Low: 0.65V ~ 1.45V
Input Logic Level - High: 2.25V ~ 3.7V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Description: IC GATE NAND 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Input Logic Level - Low: 0.65V ~ 1.45V
Input Logic Level - High: 2.25V ~ 3.7V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| NLVVHC1G86DTT1G |
|
Hersteller: onsemi
Description: IC GATE XOR 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Grade: Automotive
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Input Logic Level - Low: 0.5V ~ 1.65V
Input Logic Level - High: 1.5V ~ 3.85V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Description: IC GATE XOR 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Grade: Automotive
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Input Logic Level - Low: 0.5V ~ 1.65V
Input Logic Level - High: 1.5V ~ 3.85V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NRVB10100MFST1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.83 EUR |
| 3000+ | 0.76 EUR |
| NRVB10100MFST3G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Description: DIODE SCHOTTKY 100V 10A 5DFN
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NRVB1045MFST1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 10A 5DFN
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 45V 10A 5DFN
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB440MFST3G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB440MFSWFT1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.51 EUR |
| NRVB440MFSWFT3G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 4A 5DFN
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.43 EUR |
| 10000+ | 0.42 EUR |
| 25000+ | 0.39 EUR |
| NRVB5100MFST1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.56 EUR |
| 3000+ | 0.51 EUR |
| NRVB540MFST1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 5A 5DFN
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 5A 5DFN
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.45 EUR |
| 3000+ | 0.42 EUR |
| NRVB8H100MFST3G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 8A 5DFN
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 8A 5DFN
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH