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MURS320T3H MURS320T3H onsemi Description: DIODE GEN PURP 200V 4A SMC
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tray
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMC
Current - Average Rectified (Io): 4A
Produkt ist nicht verfügbar
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MURS360T3H MURS360T3H onsemi Description: DIODE STANDARD 600V 4A SMC
Packaging: Tray
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NTST30100CTH NTST30100CTH onsemi NTSx30100CT_G_-1G_Rev7_Jul2016.pdf Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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NJVMJD122T4G NJVMJD122T4G onsemi mjd122-d.pdf Description: TRANS NPN DARL 100V 8A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NJVMJD122T4G NJVMJD122T4G onsemi mjd122-d.pdf Description: TRANS NPN DARL 100V 8A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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NJVMJD31CT4G NJVMJD31CT4G onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
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NJVMJD31CT4G NJVMJD31CT4G onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
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NJVMJD44H11T4G NJVMJD44H11T4G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NJVMJD44H11T4G NJVMJD44H11T4G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
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NJVMJD45H11T4G NJVMJD45H11T4G onsemi mjd44h11-d.pdf Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
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NJVMJD45H11T4G NJVMJD45H11T4G onsemi mjd44h11-d.pdf Description: TRANS PNP 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
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NJVNJD2873T4G NJVNJD2873T4G onsemi njd2873t4-d.pdf Description: TRANS NPN 50V 2A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NJVNJD2873T4G NJVNJD2873T4G onsemi njd2873t4-d.pdf Description: TRANS NPN 50V 2A DPAK
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
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NRVBS2040LT3G-VF01 NRVBS2040LT3G-VF01 onsemi mbrs2040lt3-d.pdf Description: DIODE SCHOTTKY 40V 2A SMB
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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NRVBS240LT3G-VF01 NRVBS240LT3G-VF01 onsemi mbrs240lt3-d.pdf Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS260T3G NRVBS260T3G onsemi mbrs260t3-d.pdf Description: DIODE SCHOTTKY 60V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS260T3G NRVBS260T3G onsemi mbrs260t3-d.pdf Description: DIODE SCHOTTKY 60V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NRVBS3200T3G NRVBS3200T3G onsemi mbrs3200t3-d.pdf Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS3200T3G NRVBS3200T3G onsemi mbrs3200t3-d.pdf Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NRVBSS26T3G-VF01 NRVBSS26T3G-VF01 onsemi ss26-d.pdf Description: DIODE SCHOTTKY 60V 2A SMB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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NVD3055-150T4G NVD3055-150T4G onsemi ntd3055-150-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVD3055-150T4G NVD3055-150T4G onsemi ntd3055-150-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
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NVD3055L170T4G-VF01 NVD3055L170T4G-VF01 onsemi ntd3055l170-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 28.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBRS8140T3G-VF01 SBRS8140T3G-VF01 onsemi mbrs140t3-d.pdf Description: DIODE SCHOTTKY 40V 1A SMB
Produkt ist nicht verfügbar
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SBRS8140T3G-VF01 SBRS8140T3G-VF01 onsemi mbrs140t3-d.pdf Description: DIODE SCHOTTKY 40V 1A SMB
Produkt ist nicht verfügbar
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NJVMJD32CT4G NJVMJD32CT4G onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
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NJVMJD32CT4G NJVMJD32CT4G onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
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19+1.14 EUR
100+0.75 EUR
500+0.57 EUR
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N24RF16DWPT3G N24RF16DWPT3G onsemi n24rf16-d.pdf Description: RFID 16 KB EEPROM
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Type: RFID Transponder
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FDBL9406L-F085 FDBL9406L-F085 onsemi fdbl9406l-f085-d.pdf Description: MOSFET N-CH 40V 43A/240A 8HPSOF
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FOD3125 FOD3125 onsemi fod3125-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 100ns
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 8-PDIP
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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FDMS86101E FDMS86101E onsemi Description: MOSFET N-CH 100V 12.4A/60A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTHL050N65S3HF NTHL050N65S3HF onsemi nthl050n65s3hf-d.pdf Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V
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NTHL190N65S3HF NTHL190N65S3HF onsemi nthl190n65s3hf-d.pdf Description: MOSFET N-CH 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
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NTPF190N65S3HF NTPF190N65S3HF onsemi ntpf190n65s3hf-d.pdf Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
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NTB095N65S3HF NTB095N65S3HF onsemi ntb095n65s3hf-d.pdf Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
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FGHL50T65SQ FGHL50T65SQ onsemi fghl50t65sq-d.pdf Description: IGBT 650V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 19ns/93ns
Switching Energy: 410µJ (on), 88µJ (off)
Test Condition: 400V, 25A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
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FFSH5065A-F155 FFSH5065A-F155 onsemi ffsh5065a-f155-d.pdf Description: DIODE SIL CARB 650V 60A TO247-3
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 60A
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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NTMTS001N06CTXG NTMTS001N06CTXG onsemi ntmts001n06c-d.pdf Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
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SBAT54CWT3G SBAT54CWT3G onsemi bat54cwt1-d.pdf Description: DIODE ARR SCHOTT 30V 200MA SC703
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SC-70-3 (SOT323)
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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ESDM1031MX4T5G onsemi Description: ISOLATED X4DFN VRWM=3.3V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STK554U392C-E STK554U392C-E onsemi stk554u392c-d.pdf Description: 3 PHASE INVERTER IPM
Voltage: 600 V
Current: 15 A
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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LV88564RTXG onsemi LV88561-64_Rev2_Dec2018.pdf Description: NON-AUTO BLDC MOTOR DRIVE
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 20-VCT (3x3)
Applications: General Purpose
Voltage - Supply: 3.9V ~ 16V
Output Configuration: Pre-Driver - Half Bridge
Operating Temperature: -40°C ~ 105°C (TA)
Interface: PWM
Current - Output: 50mA
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 20-VFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ADD5043-915-1-GEVK ADD5043-915-1-GEVK onsemi AND9698-D.PDF Description: AX5043 915MHZ DVK-2 ADD-ON BOARD
Produkt ist nicht verfügbar
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FAN6248ADPGEVB onsemi Description: EVAL NCP1616 NCP13992 FAN6248
Outputs and Type: 1, Isolated
Main Purpose: AC/DC, Primary and Secondary Side
Supplied Contents: Board(s)
Utilized IC / Part: FAN6248
Board Type: Fully Populated
Regulator Topology: Resonant
Packaging: Bulk
Produkt ist nicht verfügbar
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FOD3125S FOD3125S onsemi fod3125-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 100ns
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
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FUSB251UCX FUSB251UCX onsemi fusb251-d.pdf Description: IC TYPE-C CC AND SBU PROTECTION
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 15µA
Protocol: USB
Supplier Device Package: 15-WLCSP (1.49x2.06)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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LC05111C23MTTTG onsemi Description: IC BATT PROT LI-ION 1CELL 6WDFN
Part Status: Obsolete
Fault Protection: Over Current
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LV8549MCGEVB LV8549MCGEVB onsemi LV8549MC_Feb2014.pdf Description: EVAL BRIDGE DR LV8549
Primary Attributes: Motors (Stepper)
Supplied Contents: Board(s)
Utilized IC / Part: LV8549MC
Type: Power Management
Function: Motor Controller/Driver, Stepper
Packaging: Bulk
Produkt ist nicht verfügbar
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LV8968BBGEVB LV8968BBGEVB onsemi lv8968bbuw-d.pdf Description: EVAL MOTOR DR LV8968B
Part Status: Active
Platform: Arduino
Utilized IC / Part: LV8968BB
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
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LV8968BBUWR2G LV8968BBUWR2G onsemi lv8968bbuw-d.pdf Description: IC 3PHASE BLDC/PMSM PREDR
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 8V ~ 28V
Voltage - Load: 7V ~ 12V
Supplier Device Package: 48-SQFP (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2
Grade: Automotive
Qualification: AEC-Q100
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MICRORB-SMA-10020-GEVB onsemi Description: EVAL SENSOR PHOTODIODE 905NM
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: MicroRB-10020
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Interface: Analog
Packaging: Bulk
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NCL2801LED1GEVB NCL2801LED1GEVB onsemi EVBUM2586-D.PDF Description: EVAL 200W PFC
Supplied Contents: Board(s)
Utilized IC / Part: NCL2801LED1
Type: Power Management
Function: Power Factor Correction
Packaging: Bulk
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NCP13992AIOGEVB onsemi EVBUM2566-D.PDF Description: EVAL BOARD FOR NCP431 NCP1616
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 95 ~ 265 VAC
Current - Output: 20A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP431, NCP1616, NCP4306, NCP13992
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side with PFC
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 240W
Produkt ist nicht verfügbar
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NCP161ASN180T1G NCP161ASN180T1G onsemi ncp161-d.pdf Description: IC REG LINEAR 1.8V 450MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.48V @ 450mA
Protection Features: Over Current, Over Temperature, Soft Start
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NCP163ASN280T1G NCP163ASN280T1G onsemi ncp163-d.pdf Description: IC REG LINEAR 2.8V 250MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 60dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.19V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit, Soft Start
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NCP81239GEVB NCP81239GEVB onsemi NCP81239GEVB_TEST_PROCEDURE.PDF Description: EVAL BOARD FOR NCP81239
Packaging: Bulk
Voltage - Output: 5V, 9V, 15V or 20V
Voltage - Input: 12V
Contents: Board(s)
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: NCP81239
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
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NCV57000DWR2G NCV57000DWR2G onsemi ncv57000-d.pdf Description: DGTL ISO 1.2KV 1CH GT DVR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Technology: Capacitive Coupling
Current - Output High, Low: 7.8A, 7.1A
Voltage - Isolation: 1200Vrms
Approval Agency: UL, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 24V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV59749MNADJTBG NCV59749MNADJTBG onsemi ncv59749-d.pdf Description: IC REG LINEAR POS ADJ 3A 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 20-QFN (5x5)
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 60dB ~ 30dB (1kHz ~ 300kHz)
Voltage Dropout (Max): 0.28V @ 3A
Protection Features: Current Limit, Thermal Shutdown
Produkt ist nicht verfügbar
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NCV7547MWTXG NCV7547MWTXG onsemi ncv7547-d.pdf Description: IC HALF BRIDGE DRIVER 48QFNW
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (7)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM, SPI
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Load Type: Capacitive and Resistive
Fault Protection: Over Load
Supplier Device Package: 48-QFNW (7x7)
Voltage - Load: 7V ~ 18V
Technology: NMOS
Applications: General Purpose
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NFAP1060L3TT NFAP1060L3TT onsemi NFAP1060L3TT-D.PDF Description: IGBT IPM 600V 10A 29-PWRSSIP MOD
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
auf Bestellung 118 Stücke:
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MURS320T3H
MURS320T3H
Hersteller: onsemi
Description: DIODE GEN PURP 200V 4A SMC
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tray
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMC
Current - Average Rectified (Io): 4A
Produkt ist nicht verfügbar
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MURS360T3H
MURS360T3H
Hersteller: onsemi
Description: DIODE STANDARD 600V 4A SMC
Packaging: Tray
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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NTST30100CTH NTSx30100CT_G_-1G_Rev7_Jul2016.pdf
NTST30100CTH
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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NJVMJD122T4G mjd122-d.pdf
NJVMJD122T4G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.62 EUR
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NJVMJD122T4G mjd122-d.pdf
NJVMJD122T4G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3020 Stücke:
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AnzahlPrivatkunde
9+2.51 EUR
14+1.58 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.74 EUR
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NJVMJD31CT4G mjd31-d.pdf
NJVMJD31CT4G
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.51 EUR
5000+0.48 EUR
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NJVMJD31CT4G mjd31-d.pdf
NJVMJD31CT4G
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.14 EUR
16+1.33 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.61 EUR
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NJVMJD44H11T4G mjd44h11-d.pdf
NJVMJD44H11T4G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NJVMJD44H11T4G mjd44h11-d.pdf
NJVMJD44H11T4G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 598 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.64 EUR
100+1.08 EUR
500+0.84 EUR
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NJVMJD45H11T4G mjd44h11-d.pdf
NJVMJD45H11T4G
Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NJVMJD45H11T4G mjd44h11-d.pdf
NJVMJD45H11T4G
Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1018 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.82 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.87 EUR
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NJVNJD2873T4G njd2873t4-d.pdf
NJVNJD2873T4G
Hersteller: onsemi
Description: TRANS NPN 50V 2A DPAK
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.61 EUR
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NJVNJD2873T4G njd2873t4-d.pdf
NJVNJD2873T4G
Hersteller: onsemi
Description: TRANS NPN 50V 2A DPAK
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Transistor Type: NPN
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 3914 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.34 EUR
15+1.48 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
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NRVBS2040LT3G-VF01 mbrs2040lt3-d.pdf
NRVBS2040LT3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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NRVBS240LT3G-VF01 mbrs240lt3-d.pdf
NRVBS240LT3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS260T3G mbrs260t3-d.pdf
NRVBS260T3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS260T3G mbrs260t3-d.pdf
NRVBS260T3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NRVBS3200T3G mbrs3200t3-d.pdf
NRVBS3200T3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVBS3200T3G mbrs3200t3-d.pdf
NRVBS3200T3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 200V 3A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NRVBSS26T3G-VF01 ss26-d.pdf
NRVBSS26T3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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NVD3055-150T4G ntd3055-150-d.pdf
NVD3055-150T4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVD3055-150T4G ntd3055-150-d.pdf
NVD3055-150T4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28.8W (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Produkt ist nicht verfügbar
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NVD3055L170T4G-VF01 ntd3055l170-d.pdf
NVD3055L170T4G-VF01
Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V
Power Dissipation (Max): 28.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBRS8140T3G-VF01 mbrs140t3-d.pdf
SBRS8140T3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SMB
Produkt ist nicht verfügbar
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SBRS8140T3G-VF01 mbrs140t3-d.pdf
SBRS8140T3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SMB
Produkt ist nicht verfügbar
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NJVMJD32CT4G mjd31-d.pdf
NJVMJD32CT4G
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.44 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD32CT4G mjd31-d.pdf
NJVMJD32CT4G
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Grade: Automotive
Qualification: AEC-Q101
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12+1.84 EUR
19+1.14 EUR
100+0.75 EUR
500+0.57 EUR
1000+0.52 EUR
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N24RF16DWPT3G n24rf16-d.pdf
N24RF16DWPT3G
Hersteller: onsemi
Description: RFID 16 KB EEPROM
Interface: I2C
Frequency: 13.56MHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Standards: ISO 15693, ISO 18000-3, NFC
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Type: RFID Transponder
auf Bestellung 3000 Stücke:
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3000+1.14 EUR
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FDBL9406L-F085 fdbl9406l-f085-d.pdf
FDBL9406L-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 43A/240A 8HPSOF
Produkt ist nicht verfügbar
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FOD3125 fod3125-d.pdf
FOD3125
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 100ns
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 8-PDIP
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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50+4.34 EUR
100+4.07 EUR
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FDMS86101E
FDMS86101E
Hersteller: onsemi
Description: MOSFET N-CH 100V 12.4A/60A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTHL050N65S3HF nthl050n65s3hf-d.pdf
NTHL050N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 378W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5017 pF @ 400 V
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1+30.32 EUR
30+18.73 EUR
120+16.22 EUR
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NTHL190N65S3HF nthl190n65s3hf-d.pdf
NTHL190N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
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2+13.28 EUR
30+7.64 EUR
120+6.4 EUR
510+5.5 EUR
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NTPF190N65S3HF ntpf190n65s3hf-d.pdf
NTPF190N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
auf Bestellung 29722 Stücke:
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3+10.12 EUR
10+6.75 EUR
100+4.83 EUR
500+4.02 EUR
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NTB095N65S3HF ntb095n65s3hf-d.pdf
NTB095N65S3HF
Hersteller: onsemi
Description: MOSFET N-CH 650V 36A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
Produkt ist nicht verfügbar
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FGHL50T65SQ fghl50t65sq-d.pdf
FGHL50T65SQ
Hersteller: onsemi
Description: IGBT 650V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 19ns/93ns
Switching Energy: 410µJ (on), 88µJ (off)
Test Condition: 400V, 25A, 4.7Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
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3+8.96 EUR
30+5 EUR
120+4.13 EUR
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FFSH5065A-F155 ffsh5065a-f155-d.pdf
FFSH5065A-F155
Hersteller: onsemi
Description: DIODE SIL CARB 650V 60A TO247-3
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 60A
Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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1+26.93 EUR
10+23.73 EUR
100+20.52 EUR
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NTMTS001N06CTXG ntmts001n06c-d.pdf
NTMTS001N06CTXG
Hersteller: onsemi
Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+2.49 EUR
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SBAT54CWT3G bat54cwt1-d.pdf
SBAT54CWT3G
Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SC703
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SC-70-3 (SOT323)
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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ESDM1031MX4T5G
Hersteller: onsemi
Description: ISOLATED X4DFN VRWM=3.3V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STK554U392C-E stk554u392c-d.pdf
STK554U392C-E
Hersteller: onsemi
Description: 3 PHASE INVERTER IPM
Voltage: 600 V
Current: 15 A
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 29-SSIP Module, 21 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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LV88564RTXG LV88561-64_Rev2_Dec2018.pdf
Hersteller: onsemi
Description: NON-AUTO BLDC MOTOR DRIVE
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 20-VCT (3x3)
Applications: General Purpose
Voltage - Supply: 3.9V ~ 16V
Output Configuration: Pre-Driver - Half Bridge
Operating Temperature: -40°C ~ 105°C (TA)
Interface: PWM
Current - Output: 50mA
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 20-VFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ADD5043-915-1-GEVK AND9698-D.PDF
ADD5043-915-1-GEVK
Hersteller: onsemi
Description: AX5043 915MHZ DVK-2 ADD-ON BOARD
Produkt ist nicht verfügbar
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FAN6248ADPGEVB
Hersteller: onsemi
Description: EVAL NCP1616 NCP13992 FAN6248
Outputs and Type: 1, Isolated
Main Purpose: AC/DC, Primary and Secondary Side
Supplied Contents: Board(s)
Utilized IC / Part: FAN6248
Board Type: Fully Populated
Regulator Topology: Resonant
Packaging: Bulk
Produkt ist nicht verfügbar
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FOD3125S fod3125-d.pdf
FOD3125S
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 100ns
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
auf Bestellung 1000 Stücke:
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5+4.19 EUR
10+3.02 EUR
100+2.32 EUR
500+2.01 EUR
1000+1.92 EUR
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FUSB251UCX fusb251-d.pdf
FUSB251UCX
Hersteller: onsemi
Description: IC TYPE-C CC AND SBU PROTECTION
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Current - Supply: 15µA
Protocol: USB
Supplier Device Package: 15-WLCSP (1.49x2.06)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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LC05111C23MTTTG
Hersteller: onsemi
Description: IC BATT PROT LI-ION 1CELL 6WDFN
Part Status: Obsolete
Fault Protection: Over Current
Supplier Device Package: 6-WDFN (4x2.6), Dual Flag
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LV8549MCGEVB LV8549MC_Feb2014.pdf
LV8549MCGEVB
Hersteller: onsemi
Description: EVAL BRIDGE DR LV8549
Primary Attributes: Motors (Stepper)
Supplied Contents: Board(s)
Utilized IC / Part: LV8549MC
Type: Power Management
Function: Motor Controller/Driver, Stepper
Packaging: Bulk
Produkt ist nicht verfügbar
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LV8968BBGEVB lv8968bbuw-d.pdf
LV8968BBGEVB
Hersteller: onsemi
Description: EVAL MOTOR DR LV8968B
Part Status: Active
Platform: Arduino
Utilized IC / Part: LV8968BB
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+416.31 EUR
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LV8968BBUWR2G lv8968bbuw-d.pdf
LV8968BBUWR2G
Hersteller: onsemi
Description: IC 3PHASE BLDC/PMSM PREDR
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 8V ~ 28V
Voltage - Load: 7V ~ 12V
Supplier Device Package: 48-SQFP (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2
Grade: Automotive
Qualification: AEC-Q100
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2500+9.62 EUR
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MICRORB-SMA-10020-GEVB
Hersteller: onsemi
Description: EVAL SENSOR PHOTODIODE 905NM
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: MicroRB-10020
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Interface: Analog
Packaging: Bulk
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1+353.95 EUR
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NCL2801LED1GEVB EVBUM2586-D.PDF
NCL2801LED1GEVB
Hersteller: onsemi
Description: EVAL 200W PFC
Supplied Contents: Board(s)
Utilized IC / Part: NCL2801LED1
Type: Power Management
Function: Power Factor Correction
Packaging: Bulk
auf Bestellung 1 Stücke:
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1+396.64 EUR
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NCP13992AIOGEVB EVBUM2566-D.PDF
Hersteller: onsemi
Description: EVAL BOARD FOR NCP431 NCP1616
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 95 ~ 265 VAC
Current - Output: 20A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP431, NCP1616, NCP4306, NCP13992
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary and Secondary Side with PFC
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 240W
Produkt ist nicht verfügbar
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NCP161ASN180T1G ncp161-d.pdf
NCP161ASN180T1G
Hersteller: onsemi
Description: IC REG LINEAR 1.8V 450MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.48V @ 450mA
Protection Features: Over Current, Over Temperature, Soft Start
auf Bestellung 102000 Stücke:
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AnzahlPrivatkunde
3000+0.43 EUR
6000+0.42 EUR
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NCP163ASN280T1G ncp163-d.pdf
NCP163ASN280T1G
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 250MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 20 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 60dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.19V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit, Soft Start
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
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NCP81239GEVB NCP81239GEVB_TEST_PROCEDURE.PDF
NCP81239GEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCP81239
Packaging: Bulk
Voltage - Output: 5V, 9V, 15V or 20V
Voltage - Input: 12V
Contents: Board(s)
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: NCP81239
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
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NCV57000DWR2G ncv57000-d.pdf
NCV57000DWR2G
Hersteller: onsemi
Description: DGTL ISO 1.2KV 1CH GT DVR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Technology: Capacitive Coupling
Current - Output High, Low: 7.8A, 7.1A
Voltage - Isolation: 1200Vrms
Approval Agency: UL, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 24V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV59749MNADJTBG ncv59749-d.pdf
NCV59749MNADJTBG
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 3A 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 20-QFN (5x5)
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable, Power Good, Soft Start
Part Status: Active
PSRR: 60dB ~ 30dB (1kHz ~ 300kHz)
Voltage Dropout (Max): 0.28V @ 3A
Protection Features: Current Limit, Thermal Shutdown
Produkt ist nicht verfügbar
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NCV7547MWTXG ncv7547-d.pdf
NCV7547MWTXG
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 48QFNW
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (7)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM, SPI
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Features: Charge Pump
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Load Type: Capacitive and Resistive
Fault Protection: Over Load
Supplier Device Package: 48-QFNW (7x7)
Voltage - Load: 7V ~ 18V
Technology: NMOS
Applications: General Purpose
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+6.89 EUR
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NFAP1060L3TT NFAP1060L3TT-D.PDF
NFAP1060L3TT
Hersteller: onsemi
Description: IGBT IPM 600V 10A 29-PWRSSIP MOD
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
auf Bestellung 118 Stücke:
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AnzahlPrivatkunde
1+29.71 EUR
10+21.06 EUR
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