Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
DTC143ZM3T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
DTC143ZM3T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
auf Bestellung 8841 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
ESD5101AFCT5G | onsemi |
Description: TVS DIODE 3.3VWM 6.5VC 2DSN Packaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 5.5pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-DSN (0.44x0.23) Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.68V Voltage - Clamping (Max) @ Ipp: 6.5V Power Line Protection: No |
auf Bestellung 8630 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
MMBZ5235ELT1G | onsemi |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V |
auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MMBZ5235ELT1 | onsemi |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V |
auf Bestellung 23889 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MMBZ5235BLT3 | onsemi |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MMBZ5235BLT1 | onsemi |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V |
auf Bestellung 162000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SCR5287RLRE | onsemi |
Description: THY T092 SPECIAL SCR Packaging: Bulk Part Status: Active |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SCR5258 | onsemi |
Description: THY T092 SPECIAL SCR Packaging: Bulk Part Status: Active |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
SCR5285RLRP | onsemi |
Description: THY T092 SPECIAL SCR TR Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
SCR5290RLRA | onsemi |
Description: THY T092 SPECIAL SCR Packaging: Bulk Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MC100LVEL34DR2 | onsemi |
![]() Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: ECL Frequency - Max: 1.5GHz Type: Clock Generator Input: LVDS, NECL, PECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.8V Ratio - Input:Output: 1:4 Differential - Input:Output: Yes/Yes Supplier Device Package: 16-SOIC PLL: No Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 2360 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
2SD2198S-DL-E | onsemi |
Description: BIP NPN 5A 50V Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
|
NRVUS1KFA | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
MC74HC74AFL1 | onsemi |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 44115 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MC74HC74AFR1 | onsemi |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 13000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MC74HC74AFR2 | onsemi |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
SCHC74ADTR2G | onsemi |
Description: SCHC74ADTR2G Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FPF2G120BF07ASP | onsemi |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: F2 IGBT Type: Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
![]() |
NTD110N02RG | onsemi |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V |
auf Bestellung 680 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NTD110N02R-001G | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V |
auf Bestellung 17861 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
1N5253BRL | onsemi |
![]() Packaging: Bulk |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MMSZ4712ET1 | onsemi |
Description: DIODE ZENER 500MW 2PIN SOD123 Packaging: Bulk |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MMSZ5238ET1 | onsemi |
Description: DIODE ZENER 8.7V 500MW 2PIN SO Packaging: Bulk |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
2SB986T | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.2 W |
auf Bestellung 8943 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
2SD1348SC-T-ND | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.2 W |
auf Bestellung 40062 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
2SD1348T | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.2 W |
auf Bestellung 18473 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
2SD1347S | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
2SD1347T | onsemi |
![]() Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SD1348S | onsemi |
![]() Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SD1347T-AE | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-MP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
![]() |
NZ9F6V8ST5G | onsemi |
![]() |
auf Bestellung 146 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
NCP81101BMNTXG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 28-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 28-QFN (5x5) |
auf Bestellung 3937 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
![]() |
NCV8164CMTW290TAG | onsemi |
Description: IC REG LINEAR 2.9V 300MA 6WDFNW Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 300mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5V Number of Regulators: 1 Supplier Device Package: 6-WDFNW (2x2) Voltage - Output (Min/Fixed): 2.9V Control Features: Enable, Power Good Grade: Automotive PSRR: 83dB ~ 61dB (100Hz ~ 100kHz) Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
LC06511D02MXTAG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6X2DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 6-X2DFN (1.4x1.4) Fault Protection: Over Current, Over Temperature Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
NTTFS5D1N06HLTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVTFS6H888NLTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NTTFS6H860NLTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVTFS6H860NLTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVTFS6H860NLWFTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 289500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NTLJS4D7N03HTAG | onsemi |
Description: MOSFET N-CH 25V 11.6A 6PQFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NTTFS8D1N08HTAG | onsemi | Description: MOSFET N-CH 80V 14A/61A 8WDFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
NRVTSM260EV2T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 12 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NRVTSM260EV2T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 12 µA @ 60 V Qualification: AEC-Q101 |
auf Bestellung 16722 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NTLJS4D9N03HTAG | onsemi |
Description: MOSFET N-CH 30V 9.5A 6PQFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-PQFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
NCV59745AMW1015TAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 mA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 20-QFNW (4x4) Voltage - Output (Min/Fixed): 1.015V Control Features: Enable, Power Good, Soft Start Grade: Automotive Part Status: Active PSRR: 75dB ~ 18dB (1kHz ~ 3MHz) Voltage Dropout (Max): 1.4V @ 3A Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Qualification: AEC-Q100 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NCV8187AMT110TAG | onsemi |
Description: IC REG LINEAR 1.1V 1.2A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 1.1V Control Features: Enable, Power Good, Soft Start PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NCV8187AMTW110TAG | onsemi |
Description: IC REG LINEAR 1.1V 1.2A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 45 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 1.1V Control Features: Enable, Power Good, Soft Start Grade: Automotive PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
NCP114AMX090TAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-UDFN (1.0x1.0) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MBRS2040LT3 | onsemi |
![]() |
auf Bestellung 17768 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MC33567D-002 | onsemi |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Input: 9V ~ 12.5V Type: Positive Fixed Operating Temperature: 0°C ~ 80°C Current - Supply: 6.3mA Supplier Device Package: 8-SOIC Part Status: Active Number of Outputs: 2 |
auf Bestellung 1862 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
VMC10E111FNR2 | onsemi |
Description: CLOCK FANOUT BUFFER 9-OUT 28PIN Packaging: Bulk Part Status: Active |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
VMC10E111FN | onsemi |
Description: CLOCK FANOUT BUFFER 9-OUT 28PIN Packaging: Bulk Part Status: Active |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
NSTHS4101PT1G | onsemi |
Description: COMP CPFET 20V 6.7A 34MOH Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
NTHS4111PT1 | onsemi |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 24600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NTHS4111PT1G | onsemi |
![]() Packaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 24 V |
auf Bestellung 1562 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MC100EL16DR2 | onsemi |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Bits: 1 Logic Type: Differential Receiver Operating Temperature: -40°C ~ 85°C Supply Voltage: 4.2V ~ 5.7V Supplier Device Package: 8-SOIC |
auf Bestellung 8930 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MC100EL16DTG | onsemi |
![]() Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Number of Bits: 1 Logic Type: Differential Receiver Operating Temperature: -40°C ~ 85°C Supply Voltage: 4.2V ~ 5.7V Supplier Device Package: 8-TSSOP |
auf Bestellung 3513 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MBRD340T4 | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DPAK Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
auf Bestellung 156708 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MBRD320T4 | onsemi |
![]() |
auf Bestellung 101950 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
DTC143ZM3T5G |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.075 EUR |
DTC143ZM3T5G |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 8841 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
42+ | 0.42 EUR |
68+ | 0.26 EUR |
110+ | 0.16 EUR |
500+ | 0.12 EUR |
1000+ | 0.1 EUR |
2000+ | 0.093 EUR |
ESD5101AFCT5G |
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 6.5VC 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-DSN (0.44x0.23)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.68V
Voltage - Clamping (Max) @ Ipp: 6.5V
Power Line Protection: No
Description: TVS DIODE 3.3VWM 6.5VC 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5.5pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-DSN (0.44x0.23)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.68V
Voltage - Clamping (Max) @ Ipp: 6.5V
Power Line Protection: No
auf Bestellung 8630 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
MMBZ5235ELT1G |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 6.8V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Description: DIODE ZENER 6.8V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15000+ | 0.035 EUR |
MMBZ5235ELT1 |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 6.8V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Description: DIODE ZENER 6.8V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 23889 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15000+ | 0.035 EUR |
MMBZ5235BLT3 |
![]() |
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.049 EUR |
MMBZ5235BLT1 |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 6.8V 225MW SOT-23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Description: DIODE ZENER 6.8V 225MW SOT-23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 162000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5323+ | 0.098 EUR |
SCR5287RLRE |
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4808+ | 0.11 EUR |
SCR5258 |
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2427+ | 0.19 EUR |
SCR5290RLRA |
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
451+ | 1.18 EUR |
MC100LVEL34DR2 |
![]() |
Hersteller: onsemi
Description: IC CLOCK GENERATOR 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 1.5GHz
Type: Clock Generator
Input: LVDS, NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.8V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-SOIC
PLL: No
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: ECL
Frequency - Max: 1.5GHz
Type: Clock Generator
Input: LVDS, NECL, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.8V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-SOIC
PLL: No
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
123+ | 3.68 EUR |
2SD2198S-DL-E |
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
468+ | 1.08 EUR |
NRVUS1KFA |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 800V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE STANDARD 800V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC74AFL1 |
![]() |
Hersteller: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 44115 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2184+ | 0.21 EUR |
MC74HC74AFR1 |
![]() |
Hersteller: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2184+ | 0.21 EUR |
MC74HC74AFR2 |
![]() |
Hersteller: onsemi
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2184+ | 0.21 EUR |
SCHC74ADTR2G |
Hersteller: onsemi
Description: SCHC74ADTR2G
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: SCHC74ADTR2G
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FPF2G120BF07ASP |
![]() |
Hersteller: onsemi
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MODULE 650V 40A 156W F2
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: F2
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 170.67 EUR |
NTD110N02RG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 24V 12.5A/110A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Description: MOSFET N-CH 24V 12.5A/110A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
680+ | 0.71 EUR |
NTD110N02R-001G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 24V 12.5A/110A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
Description: MOSFET N-CH 24V 12.5A/110A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
auf Bestellung 17861 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
683+ | 0.71 EUR |
1N5253BRL |
![]() |
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11539+ | 0.049 EUR |
MMSZ4712ET1 |
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12000+ | 0.048 EUR |
MMSZ5238ET1 |
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5323+ | 0.1 EUR |
2SB986T |
![]() |
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
auf Bestellung 8943 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2664+ | 0.18 EUR |
2SD1348SC-T-ND |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 4A TO-126
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
Description: TRANS NPN 50V 4A TO-126
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
auf Bestellung 40062 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1025+ | 0.47 EUR |
2SD1348T |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 4A TO-126
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
Description: TRANS NPN 50V 4A TO-126
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
auf Bestellung 18473 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1025+ | 0.47 EUR |
2SD1347S |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 3A 3-MP
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 3A 3-MP
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
683+ | 0.74 EUR |
2SD1347T-AE |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 3A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 3A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
683+ | 0.74 EUR |
NZ9F6V8ST5G |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 6.8V 200MW SOD923
Description: DIODE ZENER 6.8V 200MW SOD923
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 0.58 EUR |
38+ | 0.47 EUR |
100+ | 0.25 EUR |
NCP81101BMNTXG |
![]() |
Hersteller: onsemi
Description: IC REG BUCK CTLR 1PH 28QFN
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 28-QFN (5x5)
Description: IC REG BUCK CTLR 1PH 28QFN
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 28-QFN (5x5)
auf Bestellung 3937 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.89 EUR |
10+ | 2.59 EUR |
25+ | 2.44 EUR |
100+ | 2.08 EUR |
250+ | 1.96 EUR |
500+ | 1.71 EUR |
1000+ | 1.42 EUR |
NCV8164CMTW290TAG |
Hersteller: onsemi
Description: IC REG LINEAR 2.9V 300MA 6WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 2.9V 300MA 6WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5V
Number of Regulators: 1
Supplier Device Package: 6-WDFNW (2x2)
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable, Power Good
Grade: Automotive
PSRR: 83dB ~ 61dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LC06511D02MXTAG |
Hersteller: onsemi
Description: IC BATT PROT LI-ION 1CELL 6X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-X2DFN (1.4x1.4)
Fault Protection: Over Current, Over Temperature
Part Status: Obsolete
Description: IC BATT PROT LI-ION 1CELL 6X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-X2DFN (1.4x1.4)
Fault Protection: Over Current, Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTTFS5D1N06HLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.95 EUR |
3000+ | 0.9 EUR |
NVTFS6H888NLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 4.9A/14A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.34 EUR |
3000+ | 0.33 EUR |
7500+ | 0.32 EUR |
NTTFS6H860NLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.46 EUR |
3000+ | 0.39 EUR |
NVTFS6H860NLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.65 EUR |
NVTFS6H860NLWFTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 289500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.63 EUR |
3000+ | 0.62 EUR |
4500+ | 0.61 EUR |
NTLJS4D7N03HTAG |
Hersteller: onsemi
Description: MOSFET N-CH 25V 11.6A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V
Description: MOSFET N-CH 25V 11.6A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTTFS8D1N08HTAG |
Hersteller: onsemi
Description: MOSFET N-CH 80V 14A/61A 8WDFN
Description: MOSFET N-CH 80V 14A/61A 8WDFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVTSM260EV2T1G |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.18 EUR |
NRVTSM260EV2T1G |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 16722 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 0.81 EUR |
32+ | 0.55 EUR |
100+ | 0.38 EUR |
500+ | 0.29 EUR |
1000+ | 0.26 EUR |
NTLJS4D9N03HTAG |
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Description: MOSFET N-CH 30V 9.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV59745AMW1015TAG |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 1.015V 3A 20QFNW
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 20-QFNW (4x4)
Voltage - Output (Min/Fixed): 1.015V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
Part Status: Active
PSRR: 75dB ~ 18dB (1kHz ~ 3MHz)
Voltage Dropout (Max): 1.4V @ 3A
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100
Description: IC REG LINEAR 1.015V 3A 20QFNW
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 20-QFNW (4x4)
Voltage - Output (Min/Fixed): 1.015V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
Part Status: Active
PSRR: 75dB ~ 18dB (1kHz ~ 3MHz)
Voltage Dropout (Max): 1.4V @ 3A
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Qualification: AEC-Q100
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.76 EUR |
NCV8187AMT110TAG |
Hersteller: onsemi
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable, Power Good, Soft Start
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable, Power Good, Soft Start
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.43 EUR |
6000+ | 0.41 EUR |
NCV8187AMTW110TAG |
Hersteller: onsemi
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 1.1V 1.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 45 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable, Power Good, Soft Start
Grade: Automotive
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP114AMX090TAG |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 0.9V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.096 EUR |
6000+ | 0.092 EUR |
9000+ | 0.091 EUR |
15000+ | 0.089 EUR |
21000+ | 0.088 EUR |
30000+ | 0.087 EUR |
75000+ | 0.085 EUR |
MBRS2040LT3 |
![]() |
Hersteller: onsemi
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
auf Bestellung 17768 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2219+ | 0.23 EUR |
MC33567D-002 |
![]() |
Hersteller: onsemi
Description: LDO CNTRLR REG 2.525V 8PIN SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 9V ~ 12.5V
Type: Positive Fixed
Operating Temperature: 0°C ~ 80°C
Current - Supply: 6.3mA
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Outputs: 2
Description: LDO CNTRLR REG 2.525V 8PIN SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 9V ~ 12.5V
Type: Positive Fixed
Operating Temperature: 0°C ~ 80°C
Current - Supply: 6.3mA
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Outputs: 2
auf Bestellung 1862 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1158+ | 0.44 EUR |
VMC10E111FNR2 |
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
94+ | 5.27 EUR |
VMC10E111FN |
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 7.36 EUR |
NTHS4111PT1 |
![]() |
auf Bestellung 24600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1480+ | 0.34 EUR |
NTHS4111PT1G |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 30V 3.3A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 24 V
Description: MOSFET P-CH 30V 3.3A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 24 V
auf Bestellung 1562 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1562+ | 0.34 EUR |
MC100EL16DR2 |
![]() |
Hersteller: onsemi
Description: IC RCVR ECL DIFFERENTL 5V 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 4.2V ~ 5.7V
Supplier Device Package: 8-SOIC
Description: IC RCVR ECL DIFFERENTL 5V 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 4.2V ~ 5.7V
Supplier Device Package: 8-SOIC
auf Bestellung 8930 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
207+ | 2.34 EUR |
MC100EL16DTG |
![]() |
Hersteller: onsemi
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 4.2V ~ 5.7V
Supplier Device Package: 8-TSSOP
Description: IC RCVR ECL DIFFERENTL 5V 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 4.2V ~ 5.7V
Supplier Device Package: 8-TSSOP
auf Bestellung 3513 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
93+ | 5.2 EUR |
MBRD340T4 |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
auf Bestellung 156708 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1402+ | 0.35 EUR |
MBRD320T4 |
![]() |
Hersteller: onsemi
Description: DEVELOPMENT KITS/ACCESSORIES
Description: DEVELOPMENT KITS/ACCESSORIES
auf Bestellung 101950 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH