| Foto | Bezeichnung | Hersteller | Beschreibung |
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2N5302G | onsemi |
 Description: TRANS NPN 60V 30A TO204Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 30 A Part Status: Obsolete Supplier Device Package: TO-204 (TO-3) Frequency - Transition: 2MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Current - Collector Cutoff (Max): 5mA Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A |
auf Bestellung 1330 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5237ET1G | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD123 |
auf Bestellung 10263 Stücke: Lieferzeit 10-14 Tag (e) |
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| SZMMSZ5245CT1G | onsemi | Description: ZENER DIODE 500 MW SOD-123 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNEL Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 479µA Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNEL Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 479µA Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 1178 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNE Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 479µA Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 479µA Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) |
auf Bestellung 5930 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBLS1D1N08H | onsemi |
Description: MOSFET N-CH 80V 41A/351A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBLS1D1N08H | onsemi |
Description: MOSFET N-CH 80V 41A/351A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 6874 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 32A/298A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 32A/298A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V |
auf Bestellung 13395 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86062-F085 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOF Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86062-F085 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOF Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 3796 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0200N100 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOF Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0200N100 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOF Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 4068 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86063-F085 | onsemi |
Description: MOSFET N-CH 100V 240A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDBL86063-F085 | onsemi |
Description: MOSFET N-CH 100V 240A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 778 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBL095N65S3H | onsemi |
Description: SUPERFET3 FAST 95MOHM TOLL Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 2.8mA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP4304AMNTWG | onsemi |
Description: IC SEC SIDE SYNC RECT DRV 8DFN DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 8-DFN (4x4) Applications: Secondary-Side Controller Voltage - Supply: 9.5V ~ 30V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP2817BFCCT2G | onsemi |
Description: IC AMP AB STEREO 42MW 12FLIPCHIP Packaging: Cut Tape (CT) Features: Depop Package / Case: 12-UFBGA, FCBGA Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm Supplier Device Package: 12-FlipChip (1.62x1.22) Part Status: Not For New Designs |
auf Bestellung 2924 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H175FN | onsemi |
Description: IC DTYPE LATCH QUINT 20PLCC |
auf Bestellung 2530 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H130FNG | onsemi |
Description: IC S-R LATCH DUAL 20PLCC |
auf Bestellung 3063 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H130FNR2 | onsemi |
Description: IC S-R LATCH DUAL 20PLCC |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H175FNR2 | onsemi |
Description: IC DTYPE LATCH QUINT 20PLCC |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV4276CDTADJT5G | onsemi |
Description: IC REG LIN POS ADJ 400MA DPAK-5 Qualification: AEC-Q100 Current - Supply (Max): 35 mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 250mA PSRR: 70dB (100Hz) Grade: Automotive Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): 20V Supplier Device Package: DPAK-5 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 200 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 400mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCV4276CDTADJT5G | onsemi |
Description: IC REG LIN POS ADJ 400MA DPAK-5 Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): 20V Supplier Device Package: DPAK-5 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 200 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 400mA Mounting Type: Surface Mount Output Type: Adjustable Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Cut Tape (CT) Qualification: AEC-Q100 Current - Supply (Max): 35 mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.5V @ 250mA PSRR: 70dB (100Hz) Grade: Automotive |
auf Bestellung 1426 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10E446FNG | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10E446FNR2 | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10E446FNR2G | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 7630 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100E446FN | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 1715 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100E446FNR2G | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 3221 Stücke: Lieferzeit 10-14 Tag (e) |
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MC100E446FNG | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 2479 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10E446FN | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
auf Bestellung 310 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1689E-AA | onsemi |
Description: 2SA1689 - SMALL SIGNAL BIPOLAR T Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 50 mA Supplier Device Package: 3-NP Frequency - Transition: 70MHz Operating Temperature: 150°C Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1435-AA | onsemi |
Description: TRANS NPN 25V 0.3A TO-220ML Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 300 mA Supplier Device Package: TO-220ML Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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SESD5481MUT5G | onsemi |
Description: TVS DIODE 5VWM 15VC 2X3DFN Packaging: Bulk Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.7V Voltage - Clamping (Max) @ Ipp: 15V Power Line Protection: No |
auf Bestellung 5925000 Stücke: Lieferzeit 10-14 Tag (e) |
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SESD9X5.0JT5G | onsemi |
Description: TVS DIODE SOD923 Package / Case: SOD-923 Packaging: Bulk Mounting Type: Surface Mount Supplier Device Package: SOD-923 |
auf Bestellung 184000 Stücke: Lieferzeit 10-14 Tag (e) |
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AFGHL75T65SQDT | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/106ns Switching Energy: 2.12mJ (on), 1.14mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 136 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6329 Stücke: Lieferzeit 10-14 Tag (e) |
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AFGHL75T65SQD | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/106ns Switching Energy: 1.86mJ (on), 1.13mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 136 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6300 Stücke: Lieferzeit 10-14 Tag (e) |
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AFGHL75T65SQ | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/106ns Switching Energy: 1.86mJ (on), 1.13mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 139 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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FGHL75T65MQD | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/176ns Switching Energy: 1.94mJ (on), 1.55mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 145 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
auf Bestellung 1270 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5172GD8G | onsemi |
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC |
auf Bestellung 6138 Stücke: Lieferzeit 10-14 Tag (e) |
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CS5172ED8G | onsemi |
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC |
auf Bestellung 349 Stücke: Lieferzeit 10-14 Tag (e) |
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MPS5172RLRMG | onsemi |
Description: TRANS NPN 25V 0.1A TO-92 |
auf Bestellung 31152 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV214RSQT2G | onsemi |
Description: IC CURRENT SENSE 1 CIRCUIT SC88 Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Voltage - Supply Span (Max): 26 V Voltage - Supply Span (Min): 2.2 V -3db Bandwidth: 60 kHz Number of Circuits: 1 Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Voltage - Input Offset: 1 µV Current - Input Bias: 39 µA Slew Rate: 1V/µs Current - Supply: 40µA Operating Temperature: -40°C ~ 125°C (TA) Amplifier Type: Current Sense Mounting Type: Surface Mount Output Type: Rail-to-Rail Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV214RSQT2G | onsemi |
Description: IC CURRENT SENSE 1 CIRCUIT SC88 Voltage - Supply Span (Max): 26 V Voltage - Supply Span (Min): 2.2 V -3db Bandwidth: 60 kHz Number of Circuits: 1 Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Voltage - Input Offset: 1 µV Current - Input Bias: 39 µA Slew Rate: 1V/µs Output Type: Rail-to-Rail Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive Current - Supply: 40µA Operating Temperature: -40°C ~ 125°C (TA) Amplifier Type: Current Sense Mounting Type: Surface Mount |
auf Bestellung 8181 Stücke: Lieferzeit 10-14 Tag (e) |
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| FSAM50SM60G | onsemi |
Description: MOTION-SPMTM (SMART POWER MODULE Voltage: 600 V Current: 50 A Voltage - Isolation: 2500Vrms Configuration: 3 Phase Type: IGBT Mounting Type: Through Hole Package / Case: 32-PowerDIP Module (1.370", 34.80mm) Packaging: Bulk |
auf Bestellung 801 Stücke: Lieferzeit 10-14 Tag (e) |
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FSAM10SH60A | onsemi |
Description: SMART POWER MODULE 10A SPM32-AA |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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SGH40N60UFDTU | onsemi |
Description: IGBT 600V 40A 160W TO3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 160µJ (on), 200µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 97 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
auf Bestellung 204493 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVBAF3200T3G | onsemi |
Description: DIODE SCHOTTKY 200V 3A SMA-FL Current - Reverse Leakage @ Vr: 1 mA @ 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SMA-FL Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Tape & Reel (TR) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVBAF3200T3G | onsemi |
Description: DIODE SCHOTTKY 200V 3A SMA-FL Current - Reverse Leakage @ Vr: 1 mA @ 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SMA-FL Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 12066 Stücke: Lieferzeit 10-14 Tag (e) |
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NOIP1FN012KA-GTI | onsemi |
Description: IC IMAGE SENSOR 12MP 355CPGA Voltage - Supply: 1.7V ~ 1.9V, 3.2V ~ 3.4V Operating Temperature: -40°C ~ 85°C (TJ) Type: CMOS Package / Case: 355-BSPGA, Window Packaging: Tray Frames per Second: 160 Part Status: Active Supplier Device Package: 355-µPGA Active Pixel Array: 4096H x 3072V Pixel Size: 4.5µm x 4.5µm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NOIP1SN0480A-STI-A-GEVK | onsemi |
Description: EVAL KIT CMOS Sensor Type: Image Sensor Packaging: Bulk Part Status: Active Supplied Contents: Board(s) Utilized IC / Part: Python |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NOIP1SE2000A-QDC | onsemi | Description: IC IMAGE SENSOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NOIP1SN5000A-QDI-A-GEVK | onsemi |
Description: EVAL KIT NOIP1SN5000A-QDI Part Status: Active Supplied Contents: Board(s) Utilized IC / Part: Python Sensor Type: Image Sensor Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NOIP1SE0480A-STI-A-GEVK | onsemi |
Description: EVAL KIT CMOS Part Status: Active Supplied Contents: Board(s) Utilized IC / Part: Python Sensor Type: Image Sensor Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NOIP1SN2000A-QDC | onsemi |
Description: IC IMAGE SENSOR Frames per Second: 230 Supplier Device Package: 84-LCC (19x19) Active Pixel Array: 1920H x 1200V Pixel Size: 4.8µm x 4.8µm Voltage - Supply: 1.8V ~ 3.3V Operating Temperature: -40°C ~ 85°C (TJ) Type: CMOS with Processor Package / Case: 84-LCC Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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6N137TVM | onsemi |
Description: OPTOISOLTR 5KV OPEN COLL 8-MDIP Packaging: Tube Package / Case: 8-DIP (0.400", 10.16mm) Output Type: Open Collector, Schottky Clamped Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-MDIP Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CPH3324-TL-E | onsemi | Description: MOSFET P-CH 60V 1.2A 3CPH |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDN5618P-B8 | onsemi |
Description: FET -60V 1.7 MOHM SSOT3 Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SuperSOT™-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 460mW (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N5302G |
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Hersteller: onsemi
Description: TRANS NPN 60V 30A TO204
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Current - Collector Cutoff (Max): 5mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Description: TRANS NPN 60V 30A TO204
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Current - Collector Cutoff (Max): 5mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 7.57 EUR |
| MMSZ5237ET1G |
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Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
Description: DIODE ZENER 8.2V 500MW SOD123
auf Bestellung 10263 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4199+ | 0.11 EUR |
| SZMMSZ5245CT1G |
Hersteller: onsemi
Description: ZENER DIODE 500 MW SOD-123
Description: ZENER DIODE 500 MW SOD-123
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBLS1D7N08H |
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Hersteller: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET - POWER, SINGLE N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVBLS1D7N08H |
|
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET - POWER, SINGLE N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.59 EUR |
| 10+ | 5.06 EUR |
| 100+ | 4.15 EUR |
| 500+ | 4.07 EUR |
| NTBLS1D7N08H |
|
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET - POWER, SINGLE, N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 4.06 EUR |
| NTBLS1D7N08H |
|
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Description: MOSFET - POWER, SINGLE, N-CHANNE
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
auf Bestellung 5930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.34 EUR |
| 10+ | 7 EUR |
| 100+ | 5.67 EUR |
| 500+ | 5.04 EUR |
| 1000+ | 4.31 EUR |
| NVBLS1D1N08H |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 5.72 EUR |
| NVBLS1D1N08H |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6874 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.97 EUR |
| 10+ | 8.86 EUR |
| 100+ | 7 EUR |
| NTBLS1D5N08MC |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 5.9 EUR |
| NTBLS1D5N08MC |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
auf Bestellung 13395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.29 EUR |
| 10+ | 9.76 EUR |
| 100+ | 7.22 EUR |
| FDBL86062-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 5.84 EUR |
| FDBL86062-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 3796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.98 EUR |
| 10+ | 9.41 EUR |
| 100+ | 7.85 EUR |
| 500+ | 6.92 EUR |
| 1000+ | 6.23 EUR |
| FDBL0200N100 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 5.85 EUR |
| FDBL0200N100 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 4068 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.31 EUR |
| 10+ | 7.97 EUR |
| 100+ | 7.16 EUR |
| FDBL86063-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDBL86063-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.67 EUR |
| 10+ | 8.61 EUR |
| 100+ | 6.31 EUR |
| 500+ | 6.19 EUR |
| NTBL095N65S3H |
|
Hersteller: onsemi
Description: SUPERFET3 FAST 95MOHM TOLL
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: SUPERFET3 FAST 95MOHM TOLL
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP4304AMNTWG |
|
Hersteller: onsemi
Description: IC SEC SIDE SYNC RECT DRV 8DFN
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-DFN (4x4)
Applications: Secondary-Side Controller
Voltage - Supply: 9.5V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SEC SIDE SYNC RECT DRV 8DFN
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-DFN (4x4)
Applications: Secondary-Side Controller
Voltage - Supply: 9.5V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.62 EUR |
| 10+ | 2.35 EUR |
| 25+ | 2.22 EUR |
| 100+ | 1.89 EUR |
| 250+ | 1.77 EUR |
| 500+ | 1.55 EUR |
| NCP2817BFCCT2G |
|
Hersteller: onsemi
Description: IC AMP AB STEREO 42MW 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip (1.62x1.22)
Part Status: Not For New Designs
Description: IC AMP AB STEREO 42MW 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip (1.62x1.22)
Part Status: Not For New Designs
auf Bestellung 2924 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 22+ | 0.83 EUR |
| 25+ | 0.74 EUR |
| 100+ | 0.65 EUR |
| 250+ | 0.61 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.56 EUR |
| MC10H175FN |
|
Hersteller: onsemi
Description: IC DTYPE LATCH QUINT 20PLCC
Description: IC DTYPE LATCH QUINT 20PLCC
auf Bestellung 2530 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 104+ | 4.63 EUR |
| MC10H130FNG |
|
Hersteller: onsemi
Description: IC S-R LATCH DUAL 20PLCC
Description: IC S-R LATCH DUAL 20PLCC
auf Bestellung 3063 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 77+ | 6.25 EUR |
| MC10H130FNR2 |
|
Hersteller: onsemi
Description: IC S-R LATCH DUAL 20PLCC
Description: IC S-R LATCH DUAL 20PLCC
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 77+ | 6.25 EUR |
| MC10H175FNR2 |
|
Hersteller: onsemi
Description: IC DTYPE LATCH QUINT 20PLCC
Description: IC DTYPE LATCH QUINT 20PLCC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 104+ | 4.63 EUR |
| NCV4276CDTADJT5G |
|
Hersteller: onsemi
Description: IC REG LIN POS ADJ 400MA DPAK-5
Qualification: AEC-Q100
Current - Supply (Max): 35 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 70dB (100Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): 20V
Supplier Device Package: DPAK-5
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Description: IC REG LIN POS ADJ 400MA DPAK-5
Qualification: AEC-Q100
Current - Supply (Max): 35 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 70dB (100Hz)
Grade: Automotive
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): 20V
Supplier Device Package: DPAK-5
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV4276CDTADJT5G |
|
Hersteller: onsemi
Description: IC REG LIN POS ADJ 400MA DPAK-5
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): 20V
Supplier Device Package: DPAK-5
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Supply (Max): 35 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 70dB (100Hz)
Grade: Automotive
Description: IC REG LIN POS ADJ 400MA DPAK-5
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): 20V
Supplier Device Package: DPAK-5
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 200 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Supply (Max): 35 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 70dB (100Hz)
Grade: Automotive
auf Bestellung 1426 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 12+ | 1.52 EUR |
| 25+ | 1.38 EUR |
| 100+ | 1.22 EUR |
| 250+ | 1.15 EUR |
| 500+ | 1.1 EUR |
| 1000+ | 1.07 EUR |
| MC10E446FNG |
|
Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 51+ | 9.48 EUR |
| MC10E446FNR2 |
|
Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 82+ | 5.87 EUR |
| MC10E446FNR2G |
|
Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 7630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 51+ | 9.48 EUR |
| MC100E446FN |
|
Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 1715 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 82+ | 5.87 EUR |
| MC100E446FNR2G |
|
Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 3221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 51+ | 9.48 EUR |
| MC100E446FNG |
|
Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 2479 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 51+ | 9.48 EUR |
| MC10E446FN |
|
Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 82+ | 5.87 EUR |
| 2SA1689E-AA |
|
Hersteller: onsemi
Description: 2SA1689 - SMALL SIGNAL BIPOLAR T
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: 3-NP
Frequency - Transition: 70MHz
Operating Temperature: 150°C
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: 2SA1689 - SMALL SIGNAL BIPOLAR T
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: 3-NP
Frequency - Transition: 70MHz
Operating Temperature: 150°C
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1268+ | 0.39 EUR |
| 2SA1435-AA |
|
Hersteller: onsemi
Description: TRANS NPN 25V 0.3A TO-220ML
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-220ML
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: TRANS NPN 25V 0.3A TO-220ML
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-220ML
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1069+ | 0.43 EUR |
| SESD5481MUT5G |
|
Hersteller: onsemi
Description: TVS DIODE 5VWM 15VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Description: TVS DIODE 5VWM 15VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
auf Bestellung 5925000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4752+ | 0.089 EUR |
| SESD9X5.0JT5G |
Hersteller: onsemi
Description: TVS DIODE SOD923
Package / Case: SOD-923
Packaging: Bulk
Mounting Type: Surface Mount
Supplier Device Package: SOD-923
Description: TVS DIODE SOD923
Package / Case: SOD-923
Packaging: Bulk
Mounting Type: Surface Mount
Supplier Device Package: SOD-923
auf Bestellung 184000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3742+ | 0.12 EUR |
| AFGHL75T65SQDT |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/106ns
Switching Energy: 2.12mJ (on), 1.14mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/106ns
Switching Energy: 2.12mJ (on), 1.14mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6329 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.4 EUR |
| 30+ | 6.6 EUR |
| 120+ | 5.55 EUR |
| 510+ | 4.82 EUR |
| AFGHL75T65SQD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.93 EUR |
| 30+ | 6.93 EUR |
| 120+ | 5.83 EUR |
| 510+ | 5.11 EUR |
| AFGHL75T65SQ |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 139 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 139 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.79 EUR |
| 30+ | 5.59 EUR |
| 120+ | 4.67 EUR |
| FGHL75T65MQD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/176ns
Switching Energy: 1.94mJ (on), 1.55mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/176ns
Switching Energy: 1.94mJ (on), 1.55mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
auf Bestellung 1270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.91 EUR |
| 10+ | 7.39 EUR |
| 450+ | 4.58 EUR |
| 900+ | 4.54 EUR |
| CS5172GD8G |
|
Hersteller: onsemi
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
auf Bestellung 6138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 321+ | 1.53 EUR |
| CS5172ED8G |
|
Hersteller: onsemi
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
auf Bestellung 349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 349+ | 1.56 EUR |
| MPS5172RLRMG |
|
Hersteller: onsemi
Description: TRANS NPN 25V 0.1A TO-92
Description: TRANS NPN 25V 0.1A TO-92
auf Bestellung 31152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9616+ | 0.049 EUR |
| NCV214RSQT2G |
|
Hersteller: onsemi
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 26 V
Voltage - Supply Span (Min): 2.2 V
-3db Bandwidth: 60 kHz
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Input Offset: 1 µV
Current - Input Bias: 39 µA
Slew Rate: 1V/µs
Current - Supply: 40µA
Operating Temperature: -40°C ~ 125°C (TA)
Amplifier Type: Current Sense
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Qualification: AEC-Q100
Grade: Automotive
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 26 V
Voltage - Supply Span (Min): 2.2 V
-3db Bandwidth: 60 kHz
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Input Offset: 1 µV
Current - Input Bias: 39 µA
Slew Rate: 1V/µs
Current - Supply: 40µA
Operating Temperature: -40°C ~ 125°C (TA)
Amplifier Type: Current Sense
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.62 EUR |
| 6000+ | 0.61 EUR |
| NCV214RSQT2G |
|
Hersteller: onsemi
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Voltage - Supply Span (Max): 26 V
Voltage - Supply Span (Min): 2.2 V
-3db Bandwidth: 60 kHz
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Input Offset: 1 µV
Current - Input Bias: 39 µA
Slew Rate: 1V/µs
Output Type: Rail-to-Rail
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply: 40µA
Operating Temperature: -40°C ~ 125°C (TA)
Amplifier Type: Current Sense
Mounting Type: Surface Mount
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Voltage - Supply Span (Max): 26 V
Voltage - Supply Span (Min): 2.2 V
-3db Bandwidth: 60 kHz
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Input Offset: 1 µV
Current - Input Bias: 39 µA
Slew Rate: 1V/µs
Output Type: Rail-to-Rail
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply: 40µA
Operating Temperature: -40°C ~ 125°C (TA)
Amplifier Type: Current Sense
Mounting Type: Surface Mount
auf Bestellung 8181 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 19+ | 0.96 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.76 EUR |
| 250+ | 0.71 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.65 EUR |
| FSAM50SM60G |
|
Hersteller: onsemi
Description: MOTION-SPMTM (SMART POWER MODULE
Voltage: 600 V
Current: 50 A
Voltage - Isolation: 2500Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module (1.370", 34.80mm)
Packaging: Bulk
Description: MOTION-SPMTM (SMART POWER MODULE
Voltage: 600 V
Current: 50 A
Voltage - Isolation: 2500Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module (1.370", 34.80mm)
Packaging: Bulk
auf Bestellung 801 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 85.42 EUR |
| FSAM10SH60A |
|
Hersteller: onsemi
Description: SMART POWER MODULE 10A SPM32-AA
Description: SMART POWER MODULE 10A SPM32-AA
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 107.62 EUR |
| SGH40N60UFDTU |
|
Hersteller: onsemi
Description: IGBT 600V 40A 160W TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: IGBT 600V 40A 160W TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
auf Bestellung 204493 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 114+ | 3.94 EUR |
| NRVBAF3200T3G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 200V 3A SMA-FL
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA-FL
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 200V 3A SMA-FL
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA-FL
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.72 EUR |
| 10000+ | 0.7 EUR |
| NRVBAF3200T3G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 200V 3A SMA-FL
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA-FL
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 200V 3A SMA-FL
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMA-FL
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 12066 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.02 EUR |
| 12+ | 1.5 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
| NOIP1FN012KA-GTI |
|
Hersteller: onsemi
Description: IC IMAGE SENSOR 12MP 355CPGA
Voltage - Supply: 1.7V ~ 1.9V, 3.2V ~ 3.4V
Operating Temperature: -40°C ~ 85°C (TJ)
Type: CMOS
Package / Case: 355-BSPGA, Window
Packaging: Tray
Frames per Second: 160
Part Status: Active
Supplier Device Package: 355-µPGA
Active Pixel Array: 4096H x 3072V
Pixel Size: 4.5µm x 4.5µm
Description: IC IMAGE SENSOR 12MP 355CPGA
Voltage - Supply: 1.7V ~ 1.9V, 3.2V ~ 3.4V
Operating Temperature: -40°C ~ 85°C (TJ)
Type: CMOS
Package / Case: 355-BSPGA, Window
Packaging: Tray
Frames per Second: 160
Part Status: Active
Supplier Device Package: 355-µPGA
Active Pixel Array: 4096H x 3072V
Pixel Size: 4.5µm x 4.5µm
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| NOIP1SN0480A-STI-A-GEVK |
|
Hersteller: onsemi
Description: EVAL KIT CMOS
Sensor Type: Image Sensor
Packaging: Bulk
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: Python
Description: EVAL KIT CMOS
Sensor Type: Image Sensor
Packaging: Bulk
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: Python
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| NOIP1SE2000A-QDC |
Hersteller: onsemi
Description: IC IMAGE SENSOR
Description: IC IMAGE SENSOR
Produkt ist nicht verfügbar
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| NOIP1SN5000A-QDI-A-GEVK |
|
Hersteller: onsemi
Description: EVAL KIT NOIP1SN5000A-QDI
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: Python
Sensor Type: Image Sensor
Packaging: Box
Description: EVAL KIT NOIP1SN5000A-QDI
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: Python
Sensor Type: Image Sensor
Packaging: Box
Produkt ist nicht verfügbar
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| NOIP1SE0480A-STI-A-GEVK |
|
Hersteller: onsemi
Description: EVAL KIT CMOS
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: Python
Sensor Type: Image Sensor
Packaging: Bulk
Description: EVAL KIT CMOS
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: Python
Sensor Type: Image Sensor
Packaging: Bulk
Produkt ist nicht verfügbar
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| NOIP1SN2000A-QDC |
Hersteller: onsemi
Description: IC IMAGE SENSOR
Frames per Second: 230
Supplier Device Package: 84-LCC (19x19)
Active Pixel Array: 1920H x 1200V
Pixel Size: 4.8µm x 4.8µm
Voltage - Supply: 1.8V ~ 3.3V
Operating Temperature: -40°C ~ 85°C (TJ)
Type: CMOS with Processor
Package / Case: 84-LCC
Packaging: Tray
Description: IC IMAGE SENSOR
Frames per Second: 230
Supplier Device Package: 84-LCC (19x19)
Active Pixel Array: 1920H x 1200V
Pixel Size: 4.8µm x 4.8µm
Voltage - Supply: 1.8V ~ 3.3V
Operating Temperature: -40°C ~ 85°C (TJ)
Type: CMOS with Processor
Package / Case: 84-LCC
Packaging: Tray
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| 6N137TVM |
|
Hersteller: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV OPEN COLL 8-MDIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-MDIP
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
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| CPH3324-TL-E |
Hersteller: onsemi
Description: MOSFET P-CH 60V 1.2A 3CPH
Description: MOSFET P-CH 60V 1.2A 3CPH
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3206+ | 0.15 EUR |
| FDN5618P-B8 |
Hersteller: onsemi
Description: FET -60V 1.7 MOHM SSOT3
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: FET -60V 1.7 MOHM SSOT3
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 460mW (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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