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MC54HC174AJ MC54HC174AJ onsemi MOTOS12201-1.pdf?t.download=true&u=5oefqw Description: D FLIP-FLOP, HC/UH SERIES, 6-BIT
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NV25640DWVLT3G onsemi Description: 64KB SPI SER CMOS EEPROM FOR VCC
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CS5323GDW20 CS5323GDW20 onsemi ONSMS12322-1.pdf?t.download=true&u=5oefqw Description: SWITCHING CONTROLLER
Packaging: Bulk
Part Status: Active
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CS5323GDWR20 CS5323GDWR20 onsemi CS5323%20Rev7.pdf Description: IC REG CTRLR BUCK 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 800kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.4V ~ 16V
Supplier Device Package: 20-SOIC
Synchronous Rectifier: No
Control Features: Current Limit, Frequency Control
Output Phases: 3
Clock Sync: No
Number of Outputs: 3
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PCS3H6200AG-06JR PCS3H6200AG-06JR onsemi ONSMS18742-1.pdf?t.download=true&u=5oefqw Description: PLL BASED CLOCK DRIVER
Packaging: Bulk
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PCP1204-TD-H onsemi Description: BIP NPN 1.5A 50V
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PCV7683DQB5TG onsemi Description: PCV7683DQB5TG
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PCP1405-TD-H PCP1405-TD-H onsemi ena2326-d.pdf Description: MOSFET N-CH 250V 600MA SOT89
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PCS3I6100AG-06JR PCS3I6100AG-06JR onsemi Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PCS3I7100AG-06JR PCS3I7100AG-06JR onsemi Description: IC CLK EMI REDUCTION FREQ TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PCS3P7303AG-08CR PCS3P7303AG-08CR onsemi design-resources?notFound=null Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P7303AG-08CR PCS3P7303AG-08CR onsemi design-resources?notFound=null Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P7303AG-08CR PCS3P7303AG-08CR onsemi design-resources?notFound=null Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P73U00AG08TR PCS3P73U00AG08TR onsemi PCS3P73U00-D.pdf Description: IC CLK EMI REDUCTION FREQ 8TSSOP
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PCS3I6200AG-06JR PCS3I6200AG-06JR onsemi Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 120MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PCP1203-TD-H PCP1203-TD-H onsemi ena1348-d.pdf Description: TRANS NPN 30V 1.5A PCP
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NVMFS5C430NLAFT1G NVMFS5C430NLAFT1G onsemi nvmfs5c430nl-d.pdf Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS5C430NLAFT1G NVMFS5C430NLAFT1G onsemi nvmfs5c430nl-d.pdf Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS5C612NLAFT1G NVMFS5C612NLAFT1G onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C612NLAFT1G NVMFS5C612NLAFT1G onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C682NLAFT1G NVMFS5C682NLAFT1G onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
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NVMFS5C682NLAFT1G NVMFS5C682NLAFT1G onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
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NVMFS5C468NLAFT1G NVMFS5C468NLAFT1G onsemi nvmfs5c468nl-d.pdf Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C468NLAFT1G NVMFS5C468NLAFT1G onsemi nvmfs5c468nl-d.pdf Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H858NLWFT1G NVMFS6H858NLWFT1G onsemi nvmfs6h858nl-d.pdf Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6H858NLT1G NVMFS6H858NLT1G onsemi Description: MOSFET N-CH 80V 8.7A/30A 5DFN
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NVMFS6H864NLT1G NVMFS6H864NLT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H864NLT1G NVMFS6H864NLT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6B05NLWFT3G NVMFS6B05NLWFT3G onsemi ONSM-S-A0001408591-1.pdf?t.download=true&u=5oefqw Description: NVMFS6B05 - SINGLE N-CHANNEL POW
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NVMFS6B05NLT1G NVMFS6B05NLT1G onsemi NVMFS6B05NL-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 10
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NVMFS6H818NT1G NVMFS6H818NT1G onsemi NVMFS6H818N-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 80
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NVMFS6B14NWFT1G NVMFS6B14NWFT1G onsemi nvmfs6b14n-d.pdf Description: MOSFET N-CH 100V 5DFN
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NVMFS6B14NLT1G NVMFS6B14NLT1G onsemi Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6B14NLT1G NVMFS6B14NLT1G onsemi Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H801NLWFT1G NVMFS6H801NLWFT1G onsemi nvmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6B03NLT3G NVMFS6B03NLT3G onsemi nvmfs6b03nl-d.pdf Description: MOSFET N-CH 100V 20A 5DFN
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NVMFS6B14NLWFT3G NVMFS6B14NLWFT3G onsemi nvmfs6b14nl-d.pdf Description: MOSFET N-CH 100V 11A/55A 5DFN
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NVMFS6B85NLWFT3G NVMFS6B85NLWFT3G onsemi nvmfs6b85nl-d.pdf Description: MOSFET N-CH 100V 5.6A/19A 5DFN
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NVMFS6B25NLT1G NVMFS6B25NLT1G onsemi Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H864NLWFT1G NVMFS6H864NLWFT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6B03NWFT1G NVMFS6B03NWFT1G onsemi nvmfs6b03n-d.pdf Description: MOSFET N-CH 100V 5DFN
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NVMFS6B05NLT1G NVMFS6B05NLT1G onsemi nvmfs6b05nl-d.pdf Description: MOSFET N-CH 100V 17A 5DFN
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NVMFS6H836NLT1G NVMFS6H836NLT1G onsemi nvmfs6h836nl-d.pdf Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6B85NLT1G NVMFS6B85NLT1G onsemi nvmfs6b85nl-d.pdf Description: MOSFET N-CH 100V 5.6A/19A 5DFN
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NVMFS6B85NLT1G NVMFS6B85NLT1G onsemi nvmfs6b85nl-d.pdf Description: MOSFET N-CH 100V 5.6A/19A 5DFN
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NVMFS6H801NLT1G NVMFS6H801NLT1G onsemi nvmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
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NVMFS6B75NLWFT3G NVMFS6B75NLWFT3G onsemi NVMFS6B75NL-D.PDF Description: MOSFET N-CH 100V 7A/28A 5DFN
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NVMFS6H824NLWFT1G NVMFS6H824NLWFT1G onsemi Description: MOSFET N-CH 80V 20A/110A 5DFN
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NVMFS6H858NT1G NVMFS6H858NT1G onsemi nvmfs6h858n-d.pdf Description: MOSFET N-CH 80V 8.4A/29A 5DFN
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NVMFS6H858NT1G NVMFS6H858NT1G onsemi nvmfs6h858n-d.pdf Description: MOSFET N-CH 80V 8.4A/29A 5DFN
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NVMFS6H818NLWFT1G NVMFS6H818NLWFT1G onsemi nvmfs6h818nl-d.pdf Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6H848NLT1G NVMFS6H848NLT1G onsemi nvmfs6h848nl-d.pdf Description: MOSFET N-CH 80V 13A/59A 5DFN
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AS0149ATSC00XUEA0-DPBR onsemi Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
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AS0149ATSC00XUEA0-DRBR onsemi Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
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AS0149ATSC00XUEA0-TRBR onsemi Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Last Time Buy
Frames per Second: 30
Produkt ist nicht verfügbar
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NB4N316MDTG NB4N316MDTG onsemi nb4n316m-d.pdf Description: IC RCVR-CML DRVR/XLATOR 8-TSSOP
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NB4N316MDTR2G NB4N316MDTR2G onsemi nb4n316m-d.pdf Description: IC RCVR-CML DRVR/XLATOR 8-TSSOP
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MMBZ5234B MMBZ5234B onsemi FAIR-S-A0002364146-1.pdf?t.download=true&u=5oefqw Description: MMBZ5234 - ZENER DIODE, 6.2V, 5%
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
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SZMMBZ47VALT1G SZMMBZ47VALT1G onsemi mmbz5v6alt1-d.pdf Description: DIODE ZENER 38V SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 38 V
Qualification: AEC-Q101
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SZMMBZ47VALT1G SZMMBZ47VALT1G onsemi mmbz5v6alt1-d.pdf Description: DIODE ZENER 38V SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 38 V
Qualification: AEC-Q101
auf Bestellung 7570 Stücke:
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25+0.7 EUR
36+0.49 EUR
100+0.25 EUR
500+0.2 EUR
1000+0.15 EUR
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MC54HC174AJ MOTOS12201-1.pdf?t.download=true&u=5oefqw
MC54HC174AJ
Hersteller: onsemi
Description: D FLIP-FLOP, HC/UH SERIES, 6-BIT
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NV25640DWVLT3G
Hersteller: onsemi
Description: 64KB SPI SER CMOS EEPROM FOR VCC
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CS5323GDW20 ONSMS12322-1.pdf?t.download=true&u=5oefqw
CS5323GDW20
Hersteller: onsemi
Description: SWITCHING CONTROLLER
Packaging: Bulk
Part Status: Active
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CS5323GDWR20 CS5323%20Rev7.pdf
CS5323GDWR20
Hersteller: onsemi
Description: IC REG CTRLR BUCK 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 800kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.4V ~ 16V
Supplier Device Package: 20-SOIC
Synchronous Rectifier: No
Control Features: Current Limit, Frequency Control
Output Phases: 3
Clock Sync: No
Number of Outputs: 3
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249+2.03 EUR
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PCS3H6200AG-06JR ONSMS18742-1.pdf?t.download=true&u=5oefqw
PCS3H6200AG-06JR
Hersteller: onsemi
Description: PLL BASED CLOCK DRIVER
Packaging: Bulk
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PCP1204-TD-H
Hersteller: onsemi
Description: BIP NPN 1.5A 50V
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2885+0.18 EUR
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PCV7683DQB5TG
Hersteller: onsemi
Description: PCV7683DQB5TG
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PCP1405-TD-H ena2326-d.pdf
PCP1405-TD-H
Hersteller: onsemi
Description: MOSFET N-CH 250V 600MA SOT89
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PCS3I6100AG-06JR
PCS3I6100AG-06JR
Hersteller: onsemi
Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PCS3I7100AG-06JR
PCS3I7100AG-06JR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PCS3P7303AG-08CR design-resources?notFound=null
PCS3P7303AG-08CR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P7303AG-08CR design-resources?notFound=null
PCS3P7303AG-08CR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P7303AG-08CR design-resources?notFound=null
PCS3P7303AG-08CR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P73U00AG08TR PCS3P73U00-D.pdf
PCS3P73U00AG08TR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8TSSOP
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PCS3I6200AG-06JR
PCS3I6200AG-06JR
Hersteller: onsemi
Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 120MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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Anzahl Preis
189+2.6 EUR
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PCP1203-TD-H ena1348-d.pdf
PCP1203-TD-H
Hersteller: onsemi
Description: TRANS NPN 30V 1.5A PCP
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Anzahl Preis
2275+0.23 EUR
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NVMFS5C430NLAFT1G nvmfs5c430nl-d.pdf
NVMFS5C430NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 145500 Stücke:
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Anzahl Preis
1500+1.86 EUR
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NVMFS5C430NLAFT1G nvmfs5c430nl-d.pdf
NVMFS5C430NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 146680 Stücke:
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Anzahl Preis
4+5.61 EUR
10+3.67 EUR
100+2.55 EUR
500+2.08 EUR
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NVMFS5C612NLAFT1G nvmfs5c612nl-d.pdf
NVMFS5C612NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C612NLAFT1G nvmfs5c612nl-d.pdf
NVMFS5C612NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C682NLAFT1G nvmfs5c682nl-d.pdf
NVMFS5C682NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Produkt ist nicht verfügbar
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NVMFS5C682NLAFT1G nvmfs5c682nl-d.pdf
NVMFS5C682NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Produkt ist nicht verfügbar
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NVMFS5C468NLAFT1G nvmfs5c468nl-d.pdf
NVMFS5C468NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C468NLAFT1G nvmfs5c468nl-d.pdf
NVMFS5C468NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
11+1.69 EUR
100+1.14 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H858NLWFT1G nvmfs6h858nl-d.pdf
NVMFS6H858NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H858NLT1G
NVMFS6H858NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H864NLT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H864NLT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
15+1.25 EUR
100+0.97 EUR
500+0.81 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6B05NLWFT3G ONSM-S-A0001408591-1.pdf?t.download=true&u=5oefqw
NVMFS6B05NLWFT3G
Hersteller: onsemi
Description: NVMFS6B05 - SINGLE N-CHANNEL POW
Produkt ist nicht verfügbar
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NVMFS6B05NLT1G NVMFS6B05NL-D.PDF
NVMFS6B05NLT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 10
Produkt ist nicht verfügbar
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NVMFS6H818NT1G NVMFS6H818N-D.PDF
NVMFS6H818NT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 80
Produkt ist nicht verfügbar
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NVMFS6B14NWFT1G nvmfs6b14n-d.pdf
NVMFS6B14NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5DFN
Produkt ist nicht verfügbar
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NVMFS6B14NLT1G
NVMFS6B14NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B14NLT1G
NVMFS6B14NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H801NLWFT1G nvmfs6h801nl-d.pdf
NVMFS6H801NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B03NLT3G nvmfs6b03nl-d.pdf
NVMFS6B03NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 20A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B14NLWFT3G nvmfs6b14nl-d.pdf
NVMFS6B14NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B85NLWFT3G nvmfs6b85nl-d.pdf
NVMFS6B85NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B25NLT1G
NVMFS6B25NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H864NLWFT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B03NWFT1G nvmfs6b03n-d.pdf
NVMFS6B03NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5DFN
Produkt ist nicht verfügbar
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NVMFS6B05NLT1G nvmfs6b05nl-d.pdf
NVMFS6B05NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 17A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H836NLT1G nvmfs6h836nl-d.pdf
NVMFS6H836NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.92 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6B85NLT1G nvmfs6b85nl-d.pdf
NVMFS6B85NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B85NLT1G nvmfs6b85nl-d.pdf
NVMFS6B85NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H801NLT1G nvmfs6h801nl-d.pdf
NVMFS6H801NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B75NLWFT3G NVMFS6B75NL-D.PDF
NVMFS6B75NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/28A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H824NLWFT1G
NVMFS6H824NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H858NT1G nvmfs6h858n-d.pdf
NVMFS6H858NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H858NT1G nvmfs6h858n-d.pdf
NVMFS6H858NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H818NLWFT1G nvmfs6h818nl-d.pdf
NVMFS6H818NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+3.3 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H848NLT1G nvmfs6h848nl-d.pdf
NVMFS6H848NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Produkt ist nicht verfügbar
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AS0149ATSC00XUEA0-DPBR
Hersteller: onsemi
Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
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AS0149ATSC00XUEA0-DRBR
Hersteller: onsemi
Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
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AS0149ATSC00XUEA0-TRBR
Hersteller: onsemi
Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Last Time Buy
Frames per Second: 30
Produkt ist nicht verfügbar
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NB4N316MDTG nb4n316m-d.pdf
NB4N316MDTG
Hersteller: onsemi
Description: IC RCVR-CML DRVR/XLATOR 8-TSSOP
Produkt ist nicht verfügbar
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NB4N316MDTR2G nb4n316m-d.pdf
NB4N316MDTR2G
Hersteller: onsemi
Description: IC RCVR-CML DRVR/XLATOR 8-TSSOP
auf Bestellung 8171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
58+8.59 EUR
Mindestbestellmenge: 58
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MMBZ5234B FAIR-S-A0002364146-1.pdf?t.download=true&u=5oefqw
MMBZ5234B
Hersteller: onsemi
Description: MMBZ5234 - ZENER DIODE, 6.2V, 5%
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.049 EUR
Mindestbestellmenge: 11539
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SZMMBZ47VALT1G mmbz5v6alt1-d.pdf
SZMMBZ47VALT1G
Hersteller: onsemi
Description: DIODE ZENER 38V SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 38 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ47VALT1G mmbz5v6alt1-d.pdf
SZMMBZ47VALT1G
Hersteller: onsemi
Description: DIODE ZENER 38V SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 38 V
Qualification: AEC-Q101
auf Bestellung 7570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
36+0.49 EUR
100+0.25 EUR
500+0.2 EUR
1000+0.15 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
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