| Foto | Bezeichnung | Hersteller | Beschreibung |
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CAT25C64V | onsemi |
Description: IC EEPROM 64KBIT SPI 5MHZ 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 100 ns Memory Organization: 8K x 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CAT25C64S-TE13 | onsemi |
Description: IC EEPROM 64KBIT SPI 5MHZ 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 100 ns Memory Organization: 8K x 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CAT25C64S | onsemi |
Description: IC EEPROM 64KBIT SPI 5MHZ 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 100 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 5074 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT25C64LGI | onsemi |
Description: IC EEPROM 64KBIT SPI 5MHZ 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 100 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 4324 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT25160HU2I-GT3 | onsemi |
Description: IC EEPROM 16KBIT SPI 10MHZ 8UDFNPackaging: Bulk Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x2) Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC5614P-G | onsemi |
Description: MOSFET N-CH 60V SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HCPL2611SVM | onsemi |
Description: OPTOISOLTR 2.5KV OPEN COLL 8-SMDPackaging: Tube Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5.5V Voltage - Forward (Vf) (Typ): 1.4V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 50ns, 12ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HCPL2611VM | onsemi |
Description: OPTOISO 2.5KV OPEN COLL 8-PDIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Open Collector Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5.5V Voltage - Forward (Vf) (Typ): 1.4V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 2500Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 50ns, 12ns Common Mode Transient Immunity (Min): 10kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTD5C648NLT4G | onsemi |
Description: MOSFET N-CH 60V 22A/91A DPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTD5C648NLT4G | onsemi |
Description: MOSFET N-CH 60V 22A/91A DPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP3218MNR2G | onsemi |
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFNPackaging: Bulk Package / Case: 48-VFQFN Exposed Pad Voltage - Output: 0.013V ~ 1.5V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.3V ~ 22V Operating Temperature: -40°C ~ 100°C Applications: Controller, Intel IMVP-6.5™ Supplier Device Package: 48-QFN (6x6) Part Status: Obsolete |
auf Bestellung 358985 Stücke: Lieferzeit 10-14 Tag (e) |
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NBVSPA013LNHTAG | onsemi |
Description: IC OSC VCXO 212MHZ 6CLCC |
auf Bestellung 297 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT28C512HI12 | onsemi |
Description: IC EEPROM 512KBIT PAR 32TSOPPackaging: Bulk Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 32-TSOP Write Cycle Time - Word, Page: 5ms Memory Interface: Parallel Access Time: 120 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 112 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT28C512G-15 | onsemi |
Description: IC EEPROM 512KBIT 32PLCCPackaging: Bulk Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 32-PLCC (13.97x11.43) Write Cycle Time - Word, Page: 5ms Access Time: 150 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1639 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT28C512HI-15 | onsemi |
Description: IC EEPROM 512KBIT 32TSOPPackaging: Bulk Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 32-TSOP Write Cycle Time - Word, Page: 5ms Access Time: 150 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1722 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8061V | onsemi |
Description: OPTOISO 3.75KV OPN COLL 5-MFPackaging: Tube Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 3V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 5-Mini-Flat Rise / Fall Time (Typ): 20ns, 10ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 628 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBZ1516LT1G | onsemi | Description: DIODE ZENER .225W SPCL SOT23 |
auf Bestellung 69666 Stücke: Lieferzeit 10-14 Tag (e) |
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| SR4260RL | onsemi |
Description: REC SURM SPECIAL TR Packaging: Bulk Part Status: Active |
auf Bestellung 220000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SR4255RL | onsemi |
Description: REC SURM SPECIAL TR Packaging: Bulk Part Status: Active |
auf Bestellung 375000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SR4258LRL | onsemi |
Description: SR4258LRL Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DA473S6-TL-H | onsemi |
Description: TRANS VOLTAGE SUPPRESSOR DIODE |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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FFB20UP20DN-F085 | onsemi |
Description: DIODE ARRAY GP 200V 10A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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FFB20UP20DN-F085 | onsemi |
Description: DIODE ARRAY GP 200V 10A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 4885 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H136FNG | onsemi |
Description: IC COUNTER UNIV HEX HS 20PLCC |
auf Bestellung 3152 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H136FNR2G | onsemi |
Description: IC COUNTER UNIV HEX HS 20PLCC |
auf Bestellung 934 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1707T-AN | onsemi |
Description: TRANS PNP 50V 3A 3NMPPackaging: Bulk Package / Case: SC-71 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-NMP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1702S-AN | onsemi |
Description: 2SA1702S - SMALL SIGNAL BIPOLARPackaging: Bulk |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD4904NT4G | onsemi |
Description: MOSFET N-CH 30V 13A/79A DPAK |
auf Bestellung 33167 Stücke: Lieferzeit 10-14 Tag (e) |
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| TF009E-AC | onsemi |
Description: RF MOSFET JFET Packaging: Bulk Part Status: Active |
auf Bestellung 215000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TF009F-AC | onsemi |
Description: RF MOSFET JFET Packaging: Bulk Part Status: Active |
auf Bestellung 197500 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SK937Y5-AA | onsemi |
Description: NCH J-FETPackaging: Bulk |
auf Bestellung 38000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS012N10MDTAG | onsemi |
Description: PTNG 100V LOW Q 12MOHM N-FET, U8Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 78µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS012N10MDTAG | onsemi |
Description: PTNG 100V LOW Q 12MOHM N-FET, U8Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 78µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V |
auf Bestellung 4021 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFS6H860NTAG | onsemi | Description: TRENCH 8 80V NFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NTTFS4840NTAG | onsemi |
Description: MOSFET N-CH 30V 4.6A/26A 8WDFNPackaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 27.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V |
auf Bestellung 4300 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4928NTWG | onsemi |
Description: MOSFET N-CH 30V 7.3A/37A 8WDFNPackaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 810mW (Ta), 20.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 15 V |
auf Bestellung 453600 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4932NTAG | onsemi |
Description: MOSFET N-CH 30V 11A/79A 8WDFNPackaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 850mW (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V |
auf Bestellung 73565 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4H05NTWG | onsemi |
Description: MOSFET N-CH 25V 22.4A/94A 8WDFN |
auf Bestellung 218180 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4943NTAG | onsemi |
Description: MOSFET N-CH 30V 8A/41A 8WDFNPackaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 22.3W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V |
auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4941NTAG | onsemi |
Description: MOSFET N-CH 30V 8.3A/46A 8WDFNPackaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V |
auf Bestellung 16500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4823NTWG | onsemi |
Description: MOSFET N-CH 30V 7.1A/50A 8WDFNPackaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 660mW (Ta), 32.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V |
auf Bestellung 39942 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4929NTAG | onsemi |
Description: MOSFET N-CH 30V 6.6A/34A 8WDFN |
auf Bestellung 135000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4929NTWG | onsemi |
Description: MOSFET N-CH 30V 6.6A/34A 8WDFN |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4823NTAG | onsemi |
Description: MOSFET N-CH 30V 7.1A/50A 8WDFNPackaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 660mW (Ta), 32.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V |
auf Bestellung 367762 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4930NTWG | onsemi |
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN |
auf Bestellung 55000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS4941NTWG | onsemi |
Description: MOSFET N-CH 30V 8.3A/46A 8WDFNPackaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP7662P | onsemi |
Description: IC REG LINEAR SWITCHED CAP REG |
auf Bestellung 58376 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP707CMX180TCG | onsemi |
Description: LDO REGULATOR, 200 MA, ULTRA-LOW |
auf Bestellung 1446000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP786AMNADJTBG | onsemi |
Description: IC REG LINEAR POS ADJ 11MA 6DFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MC74AC32M | onsemi |
Description: OR GATE, AC SERIESPackaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FUSB3317V6AMNWTWG | onsemi |
Description: AUTOMOTIVE USB PD3.0 WITH PROGRAPackaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 20-QFN (4x4) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FUSB3317V6AMNWTWG | onsemi |
Description: AUTOMOTIVE USB PD3.0 WITH PROGRAPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Function: Controller Interface: USB Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.1 Supplier Device Package: 20-QFN (4x4) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FUSB3307D90B0AFMNWTWG | onsemi |
Description: 90W USB TYPE-C PD SOURCE CONTROLPackaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Function: Adapter Interface: USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.75V ~ 5.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.0 Supplier Device Package: 20-QFN (4x4) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FUSB3307D90B0AFMNWTWG | onsemi |
Description: 90W USB TYPE-C PD SOURCE CONTROLPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Function: Adapter Interface: USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.75V ~ 5.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.0 Supplier Device Package: 20-QFN (4x4) DigiKey Programmable: Not Verified |
auf Bestellung 3910 Stücke: Lieferzeit 10-14 Tag (e) |
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| FUSB3307D6A0BFMX | onsemi |
Description: 60W WITH PD2.0 USB TYPE-C PD SOU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FUSB301ATM1X | onsemi | Description: IC USB-C PORT CONTROLLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FUSB3307D45A0AFMX | onsemi |
Description: 45W USB TYPE-C PD SOURCE CONTROLPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Function: Adapter Interface: USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.75V ~ 5.5V Current - Supply: 10mA Protocol: USB Standards: USB 3.0 Supplier Device Package: 14-SOIC DigiKey Programmable: Not Verified |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FUSB3307D45A0AFMNWTWG | onsemi |
Description: 45W USB TYPE-C PD SOURCE CONTROL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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ARRAYX-BOB6-64P-GEVK | onsemi |
Description: C/J-ARRAY 6MM 8X8 BOBPackaging: Bulk Interface: Analog Sensor Type: Light, Silicon Photomultiplier (SiPM) Utilized IC / Part: ArrayC-60035-64P Supplied Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MICRORD-SMTPA-10010-GEVB | onsemi |
Description: RD-SERIES 1MM 10U SMTPA Packaging: Box Interface: Analog Sensor Type: Light, Silicon Photomultiplier (SiPM) Utilized IC / Part: MicroRD Supplied Contents: Board(s) Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CAT25C64V |
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Hersteller: onsemi
Description: IC EEPROM 64KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 100 ns
Memory Organization: 8K x 8
Description: IC EEPROM 64KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 100 ns
Memory Organization: 8K x 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25C64S-TE13 |
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Hersteller: onsemi
Description: IC EEPROM 64KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 100 ns
Memory Organization: 8K x 8
Description: IC EEPROM 64KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 100 ns
Memory Organization: 8K x 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25C64S |
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Hersteller: onsemi
Description: IC EEPROM 64KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 100 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 100 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 5074 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2049+ | 0.24 EUR |
| CAT25C64LGI |
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Hersteller: onsemi
Description: IC EEPROM 64KBIT SPI 5MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 100 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT SPI 5MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 100 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4324 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2049+ | 0.24 EUR |
| CAT25160HU2I-GT3 |
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Hersteller: onsemi
Description: IC EEPROM 16KBIT SPI 10MHZ 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x2)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT SPI 10MHZ 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x2)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 649+ | 0.7 EUR |
| FDC5614P-G |
Hersteller: onsemi
Description: MOSFET N-CH 60V SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 30 V
Description: MOSFET N-CH 60V SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HCPL2611SVM |
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Hersteller: onsemi
Description: OPTOISOLTR 2.5KV OPEN COLL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 2.5KV OPEN COLL 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HCPL2611VM |
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Hersteller: onsemi
Description: OPTOISO 2.5KV OPEN COLL 8-PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 2.5KV OPEN COLL 8-PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD5C648NLT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 22A/91A DPAK
Description: MOSFET N-CH 60V 22A/91A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD5C648NLT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 22A/91A DPAK
Description: MOSFET N-CH 60V 22A/91A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP3218MNR2G |
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Hersteller: onsemi
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.013V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (6x6)
Part Status: Obsolete
Description: IC REG CTRLR IMVP-6.5 1OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.013V ~ 1.5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.3V ~ 22V
Operating Temperature: -40°C ~ 100°C
Applications: Controller, Intel IMVP-6.5™
Supplier Device Package: 48-QFN (6x6)
Part Status: Obsolete
auf Bestellung 358985 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 370+ | 1.43 EUR |
| NBVSPA013LNHTAG |
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Hersteller: onsemi
Description: IC OSC VCXO 212MHZ 6CLCC
Description: IC OSC VCXO 212MHZ 6CLCC
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 15.86 EUR |
| CAT28C512HI12 |
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Hersteller: onsemi
Description: IC EEPROM 512KBIT PAR 32TSOP
Packaging: Bulk
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT PAR 32TSOP
Packaging: Bulk
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 19.01 EUR |
| CAT28C512G-15 |
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Hersteller: onsemi
Description: IC EEPROM 512KBIT 32PLCC
Packaging: Bulk
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 5ms
Access Time: 150 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT 32PLCC
Packaging: Bulk
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 5ms
Access Time: 150 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1639 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 30.24 EUR |
| CAT28C512HI-15 |
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Hersteller: onsemi
Description: IC EEPROM 512KBIT 32TSOP
Packaging: Bulk
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 5ms
Access Time: 150 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT 32TSOP
Packaging: Bulk
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 5ms
Access Time: 150 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1722 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 23.77 EUR |
| FODM8061V |
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Hersteller: onsemi
Description: OPTOISO 3.75KV OPN COLL 5-MF
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-Mini-Flat
Rise / Fall Time (Typ): 20ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 3.75KV OPN COLL 5-MF
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-Mini-Flat
Rise / Fall Time (Typ): 20ns, 10ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 628 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.29 EUR |
| 10+ | 3.11 EUR |
| 100+ | 2.41 EUR |
| 500+ | 2.1 EUR |
| SMBZ1516LT1G |
Hersteller: onsemi
Description: DIODE ZENER .225W SPCL SOT23
Description: DIODE ZENER .225W SPCL SOT23
auf Bestellung 69666 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15000+ | 0.034 EUR |
| SR4260RL |
auf Bestellung 220000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9458+ | 0.049 EUR |
| SR4255RL |
auf Bestellung 375000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9458+ | 0.049 EUR |
| SR4258LRL |
Hersteller: onsemi
Description: SR4258LRL
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: SR4258LRL
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DA473S6-TL-H |
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Hersteller: onsemi
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Description: TRANS VOLTAGE SUPPRESSOR DIODE
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7212+ | 0.07 EUR |
| FFB20UP20DN-F085 |
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Hersteller: onsemi
Description: DIODE ARRAY GP 200V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 1.89 EUR |
| 1600+ | 1.81 EUR |
| FFB20UP20DN-F085 |
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Hersteller: onsemi
Description: DIODE ARRAY GP 200V 10A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 10A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 4885 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.91 EUR |
| 10+ | 2.9 EUR |
| 100+ | 2.34 EUR |
| MC10H136FNG |
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Hersteller: onsemi
Description: IC COUNTER UNIV HEX HS 20PLCC
Description: IC COUNTER UNIV HEX HS 20PLCC
auf Bestellung 3152 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 30.8 EUR |
| MC10H136FNR2G |
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Hersteller: onsemi
Description: IC COUNTER UNIV HEX HS 20PLCC
Description: IC COUNTER UNIV HEX HS 20PLCC
auf Bestellung 934 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 30.93 EUR |
| 2SA1707T-AN |
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Hersteller: onsemi
Description: TRANS PNP 50V 3A 3NMP
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 3A 3NMP
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1211+ | 0.42 EUR |
| 2SA1702S-AN |
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auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.25 EUR |
| NTD4904NT4G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/79A DPAK
Description: MOSFET N-CH 30V 13A/79A DPAK
auf Bestellung 33167 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 849+ | 0.57 EUR |
| TF009E-AC |
auf Bestellung 215000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 360+ | 1.4 EUR |
| TF009F-AC |
auf Bestellung 197500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3806+ | 0.14 EUR |
| 2SK937Y5-AA |
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auf Bestellung 38000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1158+ | 0.46 EUR |
| NTTFS012N10MDTAG |
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Hersteller: onsemi
Description: PTNG 100V LOW Q 12MOHM N-FET, U8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 78µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
Description: PTNG 100V LOW Q 12MOHM N-FET, U8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 78µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.96 EUR |
| NTTFS012N10MDTAG |
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Hersteller: onsemi
Description: PTNG 100V LOW Q 12MOHM N-FET, U8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 78µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
Description: PTNG 100V LOW Q 12MOHM N-FET, U8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 78µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
auf Bestellung 4021 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.99 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.16 EUR |
| NTTFS6H860NTAG |
Hersteller: onsemi
Description: TRENCH 8 80V NFET
Description: TRENCH 8 80V NFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS4840NTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 4.6A/26A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Description: MOSFET N-CH 30V 4.6A/26A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
auf Bestellung 4300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 592+ | 0.84 EUR |
| NTTFS4928NTWG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 7.3A/37A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 810mW (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 15 V
Description: MOSFET N-CH 30V 7.3A/37A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 810mW (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 15 V
auf Bestellung 453600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1032+ | 0.48 EUR |
| NTTFS4932NTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/79A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V
Description: MOSFET N-CH 30V 11A/79A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 850mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 15 V
auf Bestellung 73565 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 646+ | 0.74 EUR |
| NTTFS4H05NTWG |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 22.4A/94A 8WDFN
Description: MOSFET N-CH 25V 22.4A/94A 8WDFN
auf Bestellung 218180 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 507+ | 1.04 EUR |
| NTTFS4943NTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 8A/41A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
Description: MOSFET N-CH 30V 8A/41A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 384+ | 1.21 EUR |
| NTTFS4941NTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
auf Bestellung 16500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 336+ | 1.38 EUR |
| NTTFS4823NTWG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
auf Bestellung 39942 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1158+ | 0.43 EUR |
| NTTFS4929NTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 6.6A/34A 8WDFN
Description: MOSFET N-CH 30V 6.6A/34A 8WDFN
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1134+ | 0.46 EUR |
| NTTFS4929NTWG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 6.6A/34A 8WDFN
Description: MOSFET N-CH 30V 6.6A/34A 8WDFN
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1191+ | 0.44 EUR |
| NTTFS4823NTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
Description: MOSFET N-CH 30V 7.1A/50A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 12 V
auf Bestellung 367762 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1158+ | 0.43 EUR |
| NTTFS4930NTWG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1340+ | 0.39 EUR |
| NTTFS4941NTWG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 317+ | 1.47 EUR |
| NCP7662P |
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Hersteller: onsemi
Description: IC REG LINEAR SWITCHED CAP REG
Description: IC REG LINEAR SWITCHED CAP REG
auf Bestellung 58376 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 577+ | 0.95 EUR |
| NCP707CMX180TCG |
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Hersteller: onsemi
Description: LDO REGULATOR, 200 MA, ULTRA-LOW
Description: LDO REGULATOR, 200 MA, ULTRA-LOW
auf Bestellung 1446000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2941+ | 0.17 EUR |
| NCP786AMNADJTBG |
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Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 11MA 6DFN
Description: IC REG LINEAR POS ADJ 11MA 6DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FUSB3317V6AMNWTWG |
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Hersteller: onsemi
Description: AUTOMOTIVE USB PD3.0 WITH PROGRA
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Description: AUTOMOTIVE USB PD3.0 WITH PROGRA
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FUSB3317V6AMNWTWG |
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Hersteller: onsemi
Description: AUTOMOTIVE USB PD3.0 WITH PROGRA
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Description: AUTOMOTIVE USB PD3.0 WITH PROGRA
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Function: Controller
Interface: USB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4.5V ~ 5.5V, 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.1
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FUSB3307D90B0AFMNWTWG |
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Hersteller: onsemi
Description: 90W USB TYPE-C PD SOURCE CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Description: 90W USB TYPE-C PD SOURCE CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FUSB3307D90B0AFMNWTWG |
![]() |
Hersteller: onsemi
Description: 90W USB TYPE-C PD SOURCE CONTROL
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
Description: 90W USB TYPE-C PD SOURCE CONTROL
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 20-QFN (4x4)
DigiKey Programmable: Not Verified
auf Bestellung 3910 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.5 EUR |
| 10+ | 1.83 EUR |
| 25+ | 1.66 EUR |
| 100+ | 1.48 EUR |
| 250+ | 1.39 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.29 EUR |
| FUSB3307D6A0BFMX |
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Hersteller: onsemi
Description: 60W WITH PD2.0 USB TYPE-C PD SOU
Description: 60W WITH PD2.0 USB TYPE-C PD SOU
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FUSB301ATM1X |
Hersteller: onsemi
Description: IC USB-C PORT CONTROLLER
Description: IC USB-C PORT CONTROLLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FUSB3307D45A0AFMX |
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Hersteller: onsemi
Description: 45W USB TYPE-C PD SOURCE CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 14-SOIC
DigiKey Programmable: Not Verified
Description: 45W USB TYPE-C PD SOURCE CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Function: Adapter
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.75V ~ 5.5V
Current - Supply: 10mA
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 14-SOIC
DigiKey Programmable: Not Verified
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.6 EUR |
| FUSB3307D45A0AFMNWTWG |
![]() |
Hersteller: onsemi
Description: 45W USB TYPE-C PD SOURCE CONTROL
Description: 45W USB TYPE-C PD SOURCE CONTROL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ARRAYX-BOB6-64P-GEVK |
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Hersteller: onsemi
Description: C/J-ARRAY 6MM 8X8 BOB
Packaging: Bulk
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: ArrayC-60035-64P
Supplied Contents: Board(s)
Description: C/J-ARRAY 6MM 8X8 BOB
Packaging: Bulk
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: ArrayC-60035-64P
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MICRORD-SMTPA-10010-GEVB |
Hersteller: onsemi
Description: RD-SERIES 1MM 10U SMTPA
Packaging: Box
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: MicroRD
Supplied Contents: Board(s)
Embedded: No
Description: RD-SERIES 1MM 10U SMTPA
Packaging: Box
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: MicroRD
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


























