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LA1867NM-MPB-E onsemi Description: ANALOG CAR RADIO TUNER
Packaging: Bulk
Part Status: Active
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LA1827M-MPB-E onsemi Description: HOME TUNER IC
Produkt ist nicht verfügbar
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BC848CLT3G BC848CLT3G onsemi bc846alt1-d.pdf Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
auf Bestellung 190000 Stücke:
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10000+0.017 EUR
30000+0.015 EUR
50000+0.014 EUR
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NVMFS5834NLT1G NVMFS5834NLT1G onsemi ntmfs5834nl-d.pdf Description: MOSFET N-CH 40V 14A/75A 5DFN
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NVMFS5834NLWFT3G NVMFS5834NLWFT3G onsemi ntmfs5834nl-d.pdf Description: MOSFET N-CH 40V 14A/75A 5DFN
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NVMFS5834NLWFT3G NVMFS5834NLWFT3G onsemi ntmfs5834nl-d.pdf Description: MOSFET N-CH 40V 14A/75A 5DFN
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NVMFS5834NLWFT1G NVMFS5834NLWFT1G onsemi ntmfs5834nl-d.pdf Description: MOSFET N-CH 40V 75A SO8FL
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NSV40301CTWG onsemi nss40301ct-d.pdf Description: NPN 40V LOW SAT LFPAK4 BP
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MC100EP451FAR2G MC100EP451FAR2G onsemi mc10ep451-d.pdf Description: IC FF D-TYPE SGL 6-BIT 32-LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 135 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of Bits per Element: 6
Produkt ist nicht verfügbar
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NTST40120CTH NTST40120CTH onsemi ONSM-S-A0000119699-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 120V 20A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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MARS1-TI954-GEVB MARS1-TI954-GEVB onsemi Description: OPTICAL SENSOR DEVELOPMENT TOOLS
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6N139TVM 6N139TVM onsemi ONSM-S-A0003539474-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 5KV DARL W/BASE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 240ns, 1.3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
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10+2.06 EUR
100+1.47 EUR
500+1.24 EUR
1000+1.17 EUR
2000+1.11 EUR
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SMBT1282LT1 SMBT1282LT1 onsemi Description: SS SOT23 GP XSTR SPCL TR
Packaging: Bulk
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CM1214A-01SO CM1214A-01SO onsemi cm1214a-d.pdf Description: TVS DIODE 7VWM 11.3VC SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Ethernet, RF Antenna
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11.3V (Typ)
Power Line Protection: No
Part Status: Obsolete
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CAT25M01XE-T2 onsemi Description: CAT25M01 - SERIAL EEPROM, 128KX8
Packaging: Bulk
DigiKey Programmable: Not Verified
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CAT25M01LI-G CAT25M01LI-G onsemi Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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NTMFS022N15MC NTMFS022N15MC onsemi ntmfs022n15mc-d.pdf Description: POWER MOSFET, 150V SINGLE N CHAN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
auf Bestellung 15000 Stücke:
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3000+1.63 EUR
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NTMFS022N15MC NTMFS022N15MC onsemi ntmfs022n15mc-d.pdf Description: POWER MOSFET, 150V SINGLE N CHAN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
auf Bestellung 18229 Stücke:
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5+4.17 EUR
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100+2.05 EUR
500+1.7 EUR
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NTTFS022N15MC NTTFS022N15MC onsemi nttfs022n15mc-d.pdf Description: POWER MOSFET, N CHANNEL, 150V, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
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NTTFS022N15MC NTTFS022N15MC onsemi nttfs022n15mc-d.pdf Description: POWER MOSFET, N CHANNEL, 150V, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
auf Bestellung 6979 Stücke:
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4+5.47 EUR
10+3.58 EUR
100+2.5 EUR
500+2.04 EUR
1000+1.89 EUR
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NJVMJD148T4G NJVMJD148T4G onsemi mjd148-d.pdf Description: TRANS NPN 45V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.75 W
Qualification: AEC-Q101
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2500+0.68 EUR
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4N32VM 4N32VM onsemi til113m-d.pdf Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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50+0.69 EUR
100+0.62 EUR
500+0.51 EUR
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AFGHL25T120RL AFGHL25T120RL onsemi Description: IGBT TRENCH FS 1250V 48A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 159 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27.2ns/116ns
Switching Energy: 1.94mJ (on), 730µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 277 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 400 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AFGHL25T120RH AFGHL25T120RH onsemi Description: IGBT TRENCH FS 1200V 48A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 159 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/118ns
Switching Energy: 1.94mJ (on), 770µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 189 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 261 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NXH25T120L2Q1PG onsemi nxh25t120l2q1pg-d.pdf Description: PIM Q1 3 CHANNEL T-TYPE NPC 25A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
Produkt ist nicht verfügbar
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NXH25T120L2Q1PTG onsemi nxh25t120l2q1pg-d.pdf Description: PIM Q1 3 CHANNEL T-TYPE NPC 25A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
Produkt ist nicht verfügbar
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LC749492PT-UCE-H onsemi Description: LCD PICTURE IMPROVEMENT
Packaging: Bulk
Part Status: Active
auf Bestellung 296100 Stücke:
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FSA1258AL8X FSA1258AL8X onsemi FAIRS45870-1.pdf?t.download=true&u=5oefqw Description: LOW RON LOW VOLTAGE DUAL-SPST AN
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KA7905TU KA7905TU onsemi KA79xx%28A%29%2CLM78xx.pdf Description: IC REG LINEAR -5V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -5V
Part Status: Obsolete
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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NCP7905ACTG NCP7905ACTG onsemi Description: IC REG LINEAR 5V 1A TO220AB
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FDS4435A FDS4435A onsemi FDS4435A.pdf Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
Produkt ist nicht verfügbar
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FDS4435A FDS4435A onsemi FDS4435A.pdf Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
Produkt ist nicht verfügbar
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NCP1256BSN100T1G NCP1256BSN100T1G onsemi ncp1256-d.pdf Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Obsolete
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DTC114YRLRM onsemi ONSMS30292-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MMSZ5260ET1 MMSZ5260ET1 onsemi Description: DIODE ZENER 43V 500MW SOD123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
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NRVBSS25FA NRVBSS25FA onsemi ss29fa-d.pdf Description: DIODE SCHOTTKY 50V 2A SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NDS8926 NDS8926 onsemi NDS8926.pdf Description: MOSFET 2N-CH 20V 5.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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NDS8926 NDS8926 onsemi NDS8926.pdf Description: MOSFET 2N-CH 20V 5.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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15GN03FA-TL-H 15GN03FA-TL-H onsemi ena1107-d.pdf Description: TRANS NPN VHF-UHF 70A 10V SSFP
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
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NCP252160MNTWG NCP252160MNTWG onsemi integrated-driver-mosfet?documentNotFound=3&documentId=1174266 Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters
Current - Output / Channel: 60A
Technology: N-Channel MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
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NCP252160MNTWG NCP252160MNTWG onsemi integrated-driver-mosfet?documentNotFound=3&documentId=1174266 Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters
Current - Output / Channel: 60A
Technology: N-Channel MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
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LV58063MCZ-AH LV58063MCZ-AH onsemi LV58063MC_Jul2014.pdf Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: 8-SOIC-EP/SOP8L
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 8V
Voltage - Output (Min/Fixed): 0.8V
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NTMFS5C426NLT1G NTMFS5C426NLT1G onsemi ntmfs5c426nl-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
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NTMFS5C426NLT1G NTMFS5C426NLT1G onsemi ntmfs5c426nl-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
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2SC4363-AC onsemi SNYOD004-45.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Supplier Device Package: 3-SPA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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STR-RSL10-MESH-KIT-GEVK STR-RSL10-MESH-KIT-GEVK onsemi STR-RSL10-MESH-KIT-GEVK_USER_GUIDE.PDF Description: RSL10 BLE MESH KIT
Packaging: Bulk
For Use With/Related Products: RSL10
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s)
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CAT28LV65-25 onsemi Description: IC EEPROM 64KBIT
Packaging: Bulk
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Access Time: 250 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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NUF6107MNTBG NUF6107MNTBG onsemi nuf6107mn-d.pdf Description: FILTER RC(PI) 100 OHM/30PF SMD
Packaging: Bulk
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
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FGH75T65SHDTLN4 FGH75T65SHDTLN4 onsemi fgh75t65shdtln4-d.pdf Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/189ns
Switching Energy: 1.06mJ (on), 1.56mJ (off)
Test Condition: 400V, 75A, 15Ohm, 15V
Gate Charge: 126 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 455 W
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FGHL75T65LQDT FGHL75T65LQDT onsemi fghl75t65lqdt-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/568ns
Switching Energy: 1.88mJ (on), 2.38mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 793 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
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FGHL75T65MQDT FGHL75T65MQDT onsemi fghl75t65mqdt-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/118ns
Switching Energy: 2.35mJ (on), 1.25mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
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FGHL75T65MQDTL4 FGHL75T65MQDTL4 onsemi fghl75t65mqdtl4-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/181ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
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FGHL75T65LQDTL4 FGHL75T65LQDTL4 onsemi fghl75t65lqdtl4-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/548ns
Switching Energy: 1.01mJ (on), 2.53mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 779 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
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NVD5862NT4G-VF01 NVD5862NT4G-VF01 onsemi nvd5862n-d.pdf Description: NFET DPAK 60V 98A 5.7MOHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V
Power Dissipation (Max): 4.1W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NTMJS0D8N04CLTWG NTMJS0D8N04CLTWG onsemi ntmjs0d8n04cl-d.pdf Description: MOSFET N-CH 40V 56A/368A 8LFPAK
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NTMJS0D8N04CLTWG NTMJS0D8N04CLTWG onsemi ntmjs0d8n04cl-d.pdf Description: MOSFET N-CH 40V 56A/368A 8LFPAK
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SMBT1230LT1G SMBT1230LT1G onsemi Description: SS SOT23 GP XSTR SPCL TR
Packaging: Bulk
Part Status: Active
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3EZ13D5 3EZ13D5 onsemi ONSMS10895-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 13V 3W DO41
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MC1066DBR2 MC1066DBR2 onsemi ONSM-S-A0005942250-1.pdf?t.download=true&u=5oefqw Description: SERIAL SWITCH/DIGITAL SENSOR
Packaging: Bulk
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1N6292AG 1N6292AG onsemi ONSMS21119-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 64.1VWM 103VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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LA1867NM-MPB-E
Hersteller: onsemi
Description: ANALOG CAR RADIO TUNER
Packaging: Bulk
Part Status: Active
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LA1827M-MPB-E
Hersteller: onsemi
Description: HOME TUNER IC
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BC848CLT3G bc846alt1-d.pdf
BC848CLT3G
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
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Anzahl Preis
10000+0.017 EUR
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50000+0.014 EUR
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NVMFS5834NLT1G ntmfs5834nl-d.pdf
NVMFS5834NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 14A/75A 5DFN
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NVMFS5834NLWFT3G ntmfs5834nl-d.pdf
NVMFS5834NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 40V 14A/75A 5DFN
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NVMFS5834NLWFT3G ntmfs5834nl-d.pdf
NVMFS5834NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 40V 14A/75A 5DFN
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NVMFS5834NLWFT1G ntmfs5834nl-d.pdf
NVMFS5834NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 75A SO8FL
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NSV40301CTWG nss40301ct-d.pdf
Hersteller: onsemi
Description: NPN 40V LOW SAT LFPAK4 BP
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MC100EP451FAR2G mc10ep451-d.pdf
MC100EP451FAR2G
Hersteller: onsemi
Description: IC FF D-TYPE SGL 6-BIT 32-LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 135 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of Bits per Element: 6
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NTST40120CTH ONSM-S-A0000119699-1.pdf?t.download=true&u=5oefqw
NTST40120CTH
Hersteller: onsemi
Description: DIODE ARR SCHOTT 120V 20A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
auf Bestellung 174300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
293+1.66 EUR
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MARS1-TI954-GEVB
MARS1-TI954-GEVB
Hersteller: onsemi
Description: OPTICAL SENSOR DEVELOPMENT TOOLS
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+492.52 EUR
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6N139TVM ONSM-S-A0003539474-1.pdf?t.download=true&u=5oefqw
6N139TVM
Hersteller: onsemi
Description: OPTOISO 5KV DARL W/BASE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 240ns, 1.3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
10+2.06 EUR
100+1.47 EUR
500+1.24 EUR
1000+1.17 EUR
2000+1.11 EUR
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SMBT1282LT1
SMBT1282LT1
Hersteller: onsemi
Description: SS SOT23 GP XSTR SPCL TR
Packaging: Bulk
auf Bestellung 249000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9458+0.045 EUR
Mindestbestellmenge: 9458
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CM1214A-01SO cm1214a-d.pdf
CM1214A-01SO
Hersteller: onsemi
Description: TVS DIODE 7VWM 11.3VC SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Ethernet, RF Antenna
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11.3V (Typ)
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 101642 Stücke:
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Anzahl Preis
1357+0.34 EUR
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CAT25M01XE-T2
Hersteller: onsemi
Description: CAT25M01 - SERIAL EEPROM, 128KX8
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 11076 Stücke:
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Anzahl Preis
128+4.15 EUR
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CAT25M01LI-G
CAT25M01LI-G
Hersteller: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
107+4.98 EUR
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NTMFS022N15MC ntmfs022n15mc-d.pdf
NTMFS022N15MC
Hersteller: onsemi
Description: POWER MOSFET, 150V SINGLE N CHAN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.63 EUR
Mindestbestellmenge: 3000
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NTMFS022N15MC ntmfs022n15mc-d.pdf
NTMFS022N15MC
Hersteller: onsemi
Description: POWER MOSFET, 150V SINGLE N CHAN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
auf Bestellung 18229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+2.85 EUR
100+2.05 EUR
500+1.7 EUR
1000+1.63 EUR
Mindestbestellmenge: 5
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NTTFS022N15MC nttfs022n15mc-d.pdf
NTTFS022N15MC
Hersteller: onsemi
Description: POWER MOSFET, N CHANNEL, 150V, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.82 EUR
Mindestbestellmenge: 3000
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NTTFS022N15MC nttfs022n15mc-d.pdf
NTTFS022N15MC
Hersteller: onsemi
Description: POWER MOSFET, N CHANNEL, 150V, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
auf Bestellung 6979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.47 EUR
10+3.58 EUR
100+2.5 EUR
500+2.04 EUR
1000+1.89 EUR
Mindestbestellmenge: 4
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NJVMJD148T4G mjd148-d.pdf
NJVMJD148T4G
Hersteller: onsemi
Description: TRANS NPN 45V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.75 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.68 EUR
Mindestbestellmenge: 2500
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4N32VM til113m-d.pdf
4N32VM
Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
50+0.69 EUR
100+0.62 EUR
500+0.51 EUR
Mindestbestellmenge: 12
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AFGHL25T120RL
AFGHL25T120RL
Hersteller: onsemi
Description: IGBT TRENCH FS 1250V 48A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 159 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27.2ns/116ns
Switching Energy: 1.94mJ (on), 730µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 277 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 400 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AFGHL25T120RH
AFGHL25T120RH
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 48A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 159 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/118ns
Switching Energy: 1.94mJ (on), 770µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 189 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 261 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NXH25T120L2Q1PG nxh25t120l2q1pg-d.pdf
Hersteller: onsemi
Description: PIM Q1 3 CHANNEL T-TYPE NPC 25A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
Produkt ist nicht verfügbar
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NXH25T120L2Q1PTG nxh25t120l2q1pg-d.pdf
Hersteller: onsemi
Description: PIM Q1 3 CHANNEL T-TYPE NPC 25A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
Produkt ist nicht verfügbar
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LC749492PT-UCE-H
Hersteller: onsemi
Description: LCD PICTURE IMPROVEMENT
Packaging: Bulk
Part Status: Active
auf Bestellung 296100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
83+5.48 EUR
Mindestbestellmenge: 83
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FSA1258AL8X FAIRS45870-1.pdf?t.download=true&u=5oefqw
FSA1258AL8X
Hersteller: onsemi
Description: LOW RON LOW VOLTAGE DUAL-SPST AN
auf Bestellung 38841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
931+0.54 EUR
Mindestbestellmenge: 931
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KA7905TU KA79xx%28A%29%2CLM78xx.pdf
KA7905TU
Hersteller: onsemi
Description: IC REG LINEAR -5V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -5V
Part Status: Obsolete
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 68384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
919+0.55 EUR
Mindestbestellmenge: 919
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NCP7905ACTG
NCP7905ACTG
Hersteller: onsemi
Description: IC REG LINEAR 5V 1A TO220AB
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1110+0.46 EUR
Mindestbestellmenge: 1110
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FDS4435A FDS4435A.pdf
FDS4435A
Hersteller: onsemi
Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
Produkt ist nicht verfügbar
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FDS4435A FDS4435A.pdf
FDS4435A
Hersteller: onsemi
Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
Produkt ist nicht verfügbar
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NCP1256BSN100T1G ncp1256-d.pdf
NCP1256BSN100T1G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Obsolete
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1237+0.39 EUR
Mindestbestellmenge: 1237
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DTC114YRLRM ONSMS30292-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MMSZ5260ET1
MMSZ5260ET1
Hersteller: onsemi
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6662+0.082 EUR
Mindestbestellmenge: 6662
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NRVBSS25FA ss29fa-d.pdf
NRVBSS25FA
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 2A SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NDS8926 NDS8926.pdf
NDS8926
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 5.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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NDS8926 NDS8926.pdf
NDS8926
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 5.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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15GN03FA-TL-H ena1107-d.pdf
15GN03FA-TL-H
Hersteller: onsemi
Description: TRANS NPN VHF-UHF 70A 10V SSFP
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
auf Bestellung 91000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2826+0.18 EUR
Mindestbestellmenge: 2826
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NCP252160MNTWG integrated-driver-mosfet?documentNotFound=3&documentId=1174266
NCP252160MNTWG
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters
Current - Output / Channel: 60A
Technology: N-Channel MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Produkt ist nicht verfügbar
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NCP252160MNTWG integrated-driver-mosfet?documentNotFound=3&documentId=1174266
NCP252160MNTWG
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters
Current - Output / Channel: 60A
Technology: N-Channel MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.07 EUR
10+3.89 EUR
25+3.32 EUR
100+2.67 EUR
250+2.36 EUR
500+2.16 EUR
1000+2 EUR
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LV58063MCZ-AH LV58063MC_Jul2014.pdf
LV58063MCZ-AH
Hersteller: onsemi
Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: 8-SOIC-EP/SOP8L
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 8V
Voltage - Output (Min/Fixed): 0.8V
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+1.51 EUR
Mindestbestellmenge: 300
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NTMFS5C426NLT1G ntmfs5c426nl-d.pdf
NTMFS5C426NLT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.21 EUR
3000+1.17 EUR
Mindestbestellmenge: 1500
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NTMFS5C426NLT1G ntmfs5c426nl-d.pdf
NTMFS5C426NLT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
10+2.32 EUR
100+1.75 EUR
500+1.4 EUR
Mindestbestellmenge: 6
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2SC4363-AC SNYOD004-45.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Supplier Device Package: 3-SPA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1902+0.27 EUR
Mindestbestellmenge: 1902
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STR-RSL10-MESH-KIT-GEVK STR-RSL10-MESH-KIT-GEVK_USER_GUIDE.PDF
STR-RSL10-MESH-KIT-GEVK
Hersteller: onsemi
Description: RSL10 BLE MESH KIT
Packaging: Bulk
For Use With/Related Products: RSL10
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s)
auf Bestellung 3 Stücke:
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Anzahl Preis
1+390.95 EUR
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CAT28LV65-25
Hersteller: onsemi
Description: IC EEPROM 64KBIT
Packaging: Bulk
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Access Time: 250 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2433 Stücke:
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Anzahl Preis
111+4.77 EUR
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NUF6107MNTBG nuf6107mn-d.pdf
NUF6107MNTBG
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/30PF SMD
Packaging: Bulk
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
auf Bestellung 183000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1902+0.26 EUR
Mindestbestellmenge: 1902
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FGH75T65SHDTLN4 fgh75t65shdtln4-d.pdf
FGH75T65SHDTLN4
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/189ns
Switching Energy: 1.06mJ (on), 1.56mJ (off)
Test Condition: 400V, 75A, 15Ohm, 15V
Gate Charge: 126 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 455 W
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
37+7.35 EUR
Mindestbestellmenge: 37
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FGHL75T65LQDT fghl75t65lqdt-d.pdf
FGHL75T65LQDT
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/568ns
Switching Energy: 1.88mJ (on), 2.38mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 793 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.04 EUR
10+9.03 EUR
Mindestbestellmenge: 2
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FGHL75T65MQDT fghl75t65mqdt-d.pdf
FGHL75T65MQDT
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/118ns
Switching Energy: 2.35mJ (on), 1.25mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
auf Bestellung 671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.7 EUR
10+7.43 EUR
450+4.71 EUR
Mindestbestellmenge: 2
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FGHL75T65MQDTL4 fghl75t65mqdtl4-d.pdf
FGHL75T65MQDTL4
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/181ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.77 EUR
30+7.08 EUR
120+5.95 EUR
Mindestbestellmenge: 2
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FGHL75T65LQDTL4 fghl75t65lqdtl4-d.pdf
FGHL75T65LQDTL4
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/548ns
Switching Energy: 1.01mJ (on), 2.53mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 779 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.32 EUR
30+8.14 EUR
120+6.87 EUR
Mindestbestellmenge: 2
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NVD5862NT4G-VF01 nvd5862n-d.pdf
NVD5862NT4G-VF01
Hersteller: onsemi
Description: NFET DPAK 60V 98A 5.7MOHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V
Power Dissipation (Max): 4.1W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NTMJS0D8N04CLTWG ntmjs0d8n04cl-d.pdf
NTMJS0D8N04CLTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V 56A/368A 8LFPAK
Produkt ist nicht verfügbar
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NTMJS0D8N04CLTWG ntmjs0d8n04cl-d.pdf
NTMJS0D8N04CLTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V 56A/368A 8LFPAK
Produkt ist nicht verfügbar
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SMBT1230LT1G
SMBT1230LT1G
Hersteller: onsemi
Description: SS SOT23 GP XSTR SPCL TR
Packaging: Bulk
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.25 EUR
Mindestbestellmenge: 2049
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3EZ13D5 ONSMS10895-1.pdf?t.download=true&u=5oefqw
3EZ13D5
Hersteller: onsemi
Description: DIODE ZENER 13V 3W DO41
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2404+0.21 EUR
Mindestbestellmenge: 2404
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MC1066DBR2 ONSM-S-A0005942250-1.pdf?t.download=true&u=5oefqw
MC1066DBR2
Hersteller: onsemi
Description: SERIAL SWITCH/DIGITAL SENSOR
Packaging: Bulk
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
310+1.63 EUR
Mindestbestellmenge: 310
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1N6292AG ONSMS21119-1.pdf?t.download=true&u=5oefqw
1N6292AG
Hersteller: onsemi
Description: TVS DIODE 64.1VWM 103VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 4118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1519+0.33 EUR
Mindestbestellmenge: 1519
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