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NCL30386A1DR2G NCL30386A1DR2G onsemi NCL30386-D.PDF Description: DIMMABLE POWER FACTOR CORRECTED
Packaging: Bulk
Part Status: Active
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NCL30082B3DR2G NCL30082B3DR2G onsemi NCL30082-D.PDF Description: DIMMABLE QUASI-RESONANT PRIMARY
Packaging: Bulk
Part Status: Active
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NCL30073SN065T1G NCL30073SN065T1G onsemi NCL30073-D.PDF Description: LED DRIVER, CURRENT-MODE PWM CON
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NCL30388A1DR2G onsemi ncl30388-d.pdf Description: IC LED DRVR CTRL DIM 4.7MA 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 14V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C
Applications: LED Lighting
Current - Output / Channel: 4.7mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SOIC
Dimming: Yes
Voltage - Supply (Min): 8.2V
Voltage - Supply (Max): 30V
Part Status: Last Time Buy
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NCL30388A1DR2G onsemi ncl30388-d.pdf Description: IC LED DRVR CTRL DIM 4.7MA 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 14V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C
Applications: LED Lighting
Current - Output / Channel: 4.7mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SOIC
Dimming: Yes
Voltage - Supply (Min): 8.2V
Voltage - Supply (Max): 30V
Part Status: Last Time Buy
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NLSV4T3234FCT1G NLSV4T3234FCT1G onsemi level-translators?documentNotFound=3&documentId=41887 Description: IC TRNSLTR UNIDIR 11FLIPCHIP
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NSVMSB92T1G NSVMSB92T1G onsemi MSB92T1G-D.PDF Description: TRANS PNP 300V 0.15A SC-59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SC-59
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Qualification: AEC-Q101
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MC54HC174AJ MC54HC174AJ onsemi MOTOS12201-1.pdf?t.download=true&u=5oefqw Description: D FLIP-FLOP, HC/UH SERIES, 6-BIT
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CS5323GDW20 CS5323GDW20 onsemi ONSMS12322-1.pdf?t.download=true&u=5oefqw Description: SWITCHING CONTROLLER
Packaging: Bulk
Part Status: Active
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CS5323GDWR20 CS5323GDWR20 onsemi CS5323%20Rev7.pdf Description: IC REG CTRLR BUCK 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 800kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.4V ~ 16V
Supplier Device Package: 20-SOIC
Synchronous Rectifier: No
Control Features: Current Limit, Frequency Control
Output Phases: 3
Clock Sync: No
Number of Outputs: 3
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PCS3H6200AG-06JR PCS3H6200AG-06JR onsemi ONSMS18742-1.pdf?t.download=true&u=5oefqw Description: PLL BASED CLOCK DRIVER
Packaging: Bulk
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PCP1204-TD-H onsemi Description: BIP NPN 1.5A 50V
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PCV7683DQB5TG onsemi Description: PCV7683DQB5TG
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PCS3I6100AG-06JR PCS3I6100AG-06JR onsemi Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PCS3I7100AG-06JR PCS3I7100AG-06JR onsemi Description: IC CLK EMI REDUCTION FREQ TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PCS3P7303AG-08CR PCS3P7303AG-08CR onsemi design-resources?notFound=null Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P7303AG-08CR PCS3P7303AG-08CR onsemi design-resources?notFound=null Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P7303AG-08CR PCS3P7303AG-08CR onsemi design-resources?notFound=null Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P73U00AG08TR PCS3P73U00AG08TR onsemi PCS3P73U00-D.pdf Description: IC CLK EMI REDUCTION FREQ 8TSSOP
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PCS3I6200AG-06JR PCS3I6200AG-06JR onsemi Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 120MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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PCP1203-TD-H PCP1203-TD-H onsemi ena1348-d.pdf Description: TRANS NPN 30V 1.5A PCP
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NVMFS5C430NLAFT1G NVMFS5C430NLAFT1G onsemi nvmfs5c430nl-d.pdf Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS5C430NLAFT1G NVMFS5C430NLAFT1G onsemi nvmfs5c430nl-d.pdf Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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500+2.06 EUR
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NVMFS5C612NLAFT1G NVMFS5C612NLAFT1G onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C612NLAFT1G NVMFS5C612NLAFT1G onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C682NLAFT1G NVMFS5C682NLAFT1G onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
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NVMFS5C682NLAFT1G NVMFS5C682NLAFT1G onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
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NVMFS5C468NLAFT1G NVMFS5C468NLAFT1G onsemi nvmfs5c468nl-d.pdf Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C468NLAFT1G NVMFS5C468NLAFT1G onsemi nvmfs5c468nl-d.pdf Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
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11+1.69 EUR
100+1.14 EUR
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NVMFS6H858NLWFT1G NVMFS6H858NLWFT1G onsemi nvmfs6h858nl-d.pdf Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6H858NLT1G NVMFS6H858NLT1G onsemi nvmfs6h858nl-d.pdf Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H864NLT1G NVMFS6H864NLT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H864NLT1G NVMFS6H864NLT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
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500+0.82 EUR
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NVMFS6B05NLWFT3G NVMFS6B05NLWFT3G onsemi ONSM-S-A0001408591-1.pdf?t.download=true&u=5oefqw Description: NVMFS6B05 - SINGLE N-CHANNEL POW
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NVMFS6B05NLT1G NVMFS6B05NLT1G onsemi NVMFS6B05NL-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 10
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NVMFS6H818NT1G NVMFS6H818NT1G onsemi NVMFS6H818N-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 80
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NVMFS6B14NWFT1G NVMFS6B14NWFT1G onsemi nvmfs6b14n-d.pdf Description: MOSFET N-CH 100V 5DFN
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NVMFS6B14NLT1G NVMFS6B14NLT1G onsemi Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6B14NLT1G NVMFS6B14NLT1G onsemi Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H801NLWFT1G NVMFS6H801NLWFT1G onsemi nvmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6B03NLT3G NVMFS6B03NLT3G onsemi nvmfs6b03nl-d.pdf Description: MOSFET N-CH 100V 20A 5DFN
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NVMFS6B14NLWFT3G NVMFS6B14NLWFT3G onsemi nvmfs6b14nl-d.pdf Description: MOSFET N-CH 100V 11A/55A 5DFN
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NVMFS6B85NLWFT3G NVMFS6B85NLWFT3G onsemi nvmfs6b85nl-d.pdf Description: MOSFET N-CH 100V 5.6A/19A 5DFN
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NVMFS6B25NLT1G NVMFS6B25NLT1G onsemi Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H864NLWFT1G NVMFS6H864NLWFT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6B03NWFT1G NVMFS6B03NWFT1G onsemi nvmfs6b03n-d.pdf Description: MOSFET N-CH 100V 5DFN
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NVMFS6B05NLT1G NVMFS6B05NLT1G onsemi nvmfs6b05nl-d.pdf Description: MOSFET N-CH 100V 17A 5DFN
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NVMFS6H836NLT1G NVMFS6H836NLT1G onsemi nvmfs6h836nl-d.pdf Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6B85NLT1G NVMFS6B85NLT1G onsemi nvmfs6b85nl-d.pdf Description: MOSFET N-CH 100V 5.6A/19A 5DFN
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NVMFS6B85NLT1G NVMFS6B85NLT1G onsemi nvmfs6b85nl-d.pdf Description: MOSFET N-CH 100V 5.6A/19A 5DFN
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NVMFS6H801NLT1G NVMFS6H801NLT1G onsemi nvmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
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NVMFS6B75NLWFT3G NVMFS6B75NLWFT3G onsemi NVMFS6B75NL-D.PDF Description: MOSFET N-CH 100V 7A/28A 5DFN
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NVMFS6H824NLWFT1G NVMFS6H824NLWFT1G onsemi nvmfs6h824nl-d.pdf Description: MOSFET N-CH 80V 20A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H858NT1G NVMFS6H858NT1G onsemi nvmfs6h858n-d.pdf Description: MOSFET N-CH 80V 8.4A/29A 5DFN
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NVMFS6H858NT1G NVMFS6H858NT1G onsemi nvmfs6h858n-d.pdf Description: MOSFET N-CH 80V 8.4A/29A 5DFN
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NVMFS6H818NLWFT1G NVMFS6H818NLWFT1G onsemi nvmfs6h818nl-d.pdf Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6H848NLT1G NVMFS6H848NLT1G onsemi nvmfs6h848nl-d.pdf Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
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AS0149ATSC00XUEA0-DPBR onsemi Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
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AS0149ATSC00XUEA0-DRBR onsemi Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
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AS0149ATSC00XUEA0-TRBR onsemi Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Last Time Buy
Frames per Second: 30
Produkt ist nicht verfügbar
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NCL30386A1DR2G NCL30386-D.PDF
NCL30386A1DR2G
Hersteller: onsemi
Description: DIMMABLE POWER FACTOR CORRECTED
Packaging: Bulk
Part Status: Active
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NCL30082B3DR2G NCL30082-D.PDF
NCL30082B3DR2G
Hersteller: onsemi
Description: DIMMABLE QUASI-RESONANT PRIMARY
Packaging: Bulk
Part Status: Active
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NCL30073SN065T1G NCL30073-D.PDF
NCL30073SN065T1G
Hersteller: onsemi
Description: LED DRIVER, CURRENT-MODE PWM CON
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NCL30388A1DR2G ncl30388-d.pdf
Hersteller: onsemi
Description: IC LED DRVR CTRL DIM 4.7MA 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 14V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C
Applications: LED Lighting
Current - Output / Channel: 4.7mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SOIC
Dimming: Yes
Voltage - Supply (Min): 8.2V
Voltage - Supply (Max): 30V
Part Status: Last Time Buy
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NCL30388A1DR2G ncl30388-d.pdf
Hersteller: onsemi
Description: IC LED DRVR CTRL DIM 4.7MA 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 14V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C
Applications: LED Lighting
Current - Output / Channel: 4.7mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SOIC
Dimming: Yes
Voltage - Supply (Min): 8.2V
Voltage - Supply (Max): 30V
Part Status: Last Time Buy
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NLSV4T3234FCT1G level-translators?documentNotFound=3&documentId=41887
NLSV4T3234FCT1G
Hersteller: onsemi
Description: IC TRNSLTR UNIDIR 11FLIPCHIP
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NSVMSB92T1G MSB92T1G-D.PDF
NSVMSB92T1G
Hersteller: onsemi
Description: TRANS PNP 300V 0.15A SC-59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SC-59
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Qualification: AEC-Q101
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2868+0.15 EUR
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MC54HC174AJ MOTOS12201-1.pdf?t.download=true&u=5oefqw
MC54HC174AJ
Hersteller: onsemi
Description: D FLIP-FLOP, HC/UH SERIES, 6-BIT
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CS5323GDW20 ONSMS12322-1.pdf?t.download=true&u=5oefqw
CS5323GDW20
Hersteller: onsemi
Description: SWITCHING CONTROLLER
Packaging: Bulk
Part Status: Active
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CS5323GDWR20 CS5323%20Rev7.pdf
CS5323GDWR20
Hersteller: onsemi
Description: IC REG CTRLR BUCK 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 800kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.4V ~ 16V
Supplier Device Package: 20-SOIC
Synchronous Rectifier: No
Control Features: Current Limit, Frequency Control
Output Phases: 3
Clock Sync: No
Number of Outputs: 3
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PCS3H6200AG-06JR ONSMS18742-1.pdf?t.download=true&u=5oefqw
PCS3H6200AG-06JR
Hersteller: onsemi
Description: PLL BASED CLOCK DRIVER
Packaging: Bulk
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166+2.96 EUR
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PCP1204-TD-H
Hersteller: onsemi
Description: BIP NPN 1.5A 50V
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2885+0.18 EUR
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PCV7683DQB5TG
Hersteller: onsemi
Description: PCV7683DQB5TG
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PCS3I6100AG-06JR
PCS3I6100AG-06JR
Hersteller: onsemi
Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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167+2.74 EUR
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PCS3I7100AG-06JR
PCS3I7100AG-06JR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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189+2.6 EUR
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PCS3P7303AG-08CR design-resources?notFound=null
PCS3P7303AG-08CR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P7303AG-08CR design-resources?notFound=null
PCS3P7303AG-08CR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
Produkt ist nicht verfügbar
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PCS3P7303AG-08CR design-resources?notFound=null
PCS3P7303AG-08CR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
auf Bestellung 424354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
628+0.84 EUR
Mindestbestellmenge: 628
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PCS3P73U00AG08TR PCS3P73U00-D.pdf
PCS3P73U00AG08TR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8TSSOP
auf Bestellung 23950 Stücke:
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Anzahl Preis
224+2.38 EUR
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PCS3I6200AG-06JR
PCS3I6200AG-06JR
Hersteller: onsemi
Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 120MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 385000 Stücke:
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Anzahl Preis
167+2.74 EUR
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PCP1203-TD-H ena1348-d.pdf
PCP1203-TD-H
Hersteller: onsemi
Description: TRANS NPN 30V 1.5A PCP
auf Bestellung 14950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2275+0.23 EUR
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NVMFS5C430NLAFT1G nvmfs5c430nl-d.pdf
NVMFS5C430NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C430NLAFT1G nvmfs5c430nl-d.pdf
NVMFS5C430NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.24 EUR
10+3.42 EUR
100+2.39 EUR
500+2.06 EUR
Mindestbestellmenge: 4
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NVMFS5C612NLAFT1G nvmfs5c612nl-d.pdf
NVMFS5C612NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C612NLAFT1G nvmfs5c612nl-d.pdf
NVMFS5C612NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C682NLAFT1G nvmfs5c682nl-d.pdf
NVMFS5C682NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
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NVMFS5C682NLAFT1G nvmfs5c682nl-d.pdf
NVMFS5C682NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Produkt ist nicht verfügbar
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NVMFS5C468NLAFT1G nvmfs5c468nl-d.pdf
NVMFS5C468NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C468NLAFT1G nvmfs5c468nl-d.pdf
NVMFS5C468NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
11+1.69 EUR
100+1.14 EUR
Mindestbestellmenge: 7
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NVMFS6H858NLWFT1G nvmfs6h858nl-d.pdf
NVMFS6H858NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H858NLT1G nvmfs6h858nl-d.pdf
NVMFS6H858NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.5 EUR
3000+0.46 EUR
4500+0.44 EUR
Mindestbestellmenge: 1500
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NVMFS6H864NLT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.71 EUR
3000+0.65 EUR
4500+0.63 EUR
7500+0.6 EUR
10500+0.59 EUR
Mindestbestellmenge: 1500
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NVMFS6H864NLT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 19273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.55 EUR
100+1.04 EUR
500+0.82 EUR
Mindestbestellmenge: 8
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NVMFS6B05NLWFT3G ONSM-S-A0001408591-1.pdf?t.download=true&u=5oefqw
NVMFS6B05NLWFT3G
Hersteller: onsemi
Description: NVMFS6B05 - SINGLE N-CHANNEL POW
Produkt ist nicht verfügbar
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NVMFS6B05NLT1G NVMFS6B05NL-D.PDF
NVMFS6B05NLT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 10
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NVMFS6H818NT1G NVMFS6H818N-D.PDF
NVMFS6H818NT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 80
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NVMFS6B14NWFT1G nvmfs6b14n-d.pdf
NVMFS6B14NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5DFN
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NVMFS6B14NLT1G
NVMFS6B14NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B14NLT1G
NVMFS6B14NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H801NLWFT1G nvmfs6h801nl-d.pdf
NVMFS6H801NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B03NLT3G nvmfs6b03nl-d.pdf
NVMFS6B03NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 20A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B14NLWFT3G nvmfs6b14nl-d.pdf
NVMFS6B14NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B85NLWFT3G nvmfs6b85nl-d.pdf
NVMFS6B85NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B25NLT1G
NVMFS6B25NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H864NLWFT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B03NWFT1G nvmfs6b03n-d.pdf
NVMFS6B03NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5DFN
Produkt ist nicht verfügbar
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NVMFS6B05NLT1G nvmfs6b05nl-d.pdf
NVMFS6B05NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 17A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H836NLT1G nvmfs6h836nl-d.pdf
NVMFS6H836NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.85 EUR
3000+0.79 EUR
4500+0.75 EUR
7500+0.73 EUR
Mindestbestellmenge: 1500
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NVMFS6B85NLT1G nvmfs6b85nl-d.pdf
NVMFS6B85NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B85NLT1G nvmfs6b85nl-d.pdf
NVMFS6B85NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H801NLT1G nvmfs6h801nl-d.pdf
NVMFS6H801NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B75NLWFT3G NVMFS6B75NL-D.PDF
NVMFS6B75NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/28A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H824NLWFT1G nvmfs6h824nl-d.pdf
NVMFS6H824NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.81 EUR
Mindestbestellmenge: 1500
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NVMFS6H858NT1G nvmfs6h858n-d.pdf
NVMFS6H858NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H858NT1G nvmfs6h858n-d.pdf
NVMFS6H858NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H818NLWFT1G nvmfs6h818nl-d.pdf
NVMFS6H818NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+3.3 EUR
Mindestbestellmenge: 1500
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NVMFS6H848NLT1G nvmfs6h848nl-d.pdf
NVMFS6H848NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
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AS0149ATSC00XUEA0-DPBR
Hersteller: onsemi
Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
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AS0149ATSC00XUEA0-DRBR
Hersteller: onsemi
Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
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AS0149ATSC00XUEA0-TRBR
Hersteller: onsemi
Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Last Time Buy
Frames per Second: 30
Produkt ist nicht verfügbar
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