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MM5Z22VT5G MM5Z22VT5G onsemi Description: ZEN SOD523 LOW IZ REG 0.5W 22V
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
auf Bestellung 104000 Stücke:
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8000+0.065 EUR
16000+0.054 EUR
24000+0.053 EUR
56000+0.048 EUR
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SZMM5Z22VT1G SZMM5Z22VT1G onsemi Description: ZEN SOD523 LOW IZ REG 0.5W 22V
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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3000+0.1 EUR
6000+0.094 EUR
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AMIS-49200-XTD AMIS-49200-XTD onsemi amis-492x0-d.pdf Description: IC TRANSCEIVER HALF 1/1 44LQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 6.2V
Number of Drivers/Receivers: 1/1
Data Rate: 32.25Kbps
Protocol: MDS-MAU
Supplier Device Package: 44-LQFP (10x10)
Receiver Hysteresis: 250 mV
Duplex: Half
Part Status: Active
Produkt ist nicht verfügbar
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FDMS86163P-23507X FDMS86163P-23507X onsemi Description: FET -100V 22.0 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V
Produkt ist nicht verfügbar
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STR-SENSORS-GEVK STR-SENSORS-GEVK onsemi STR-SENSORS-GEVK_USER_GUIDE.PDF Description: STRATA ENABLED TOUCH, PROXIMITY,
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LC717A10ARGPGEVB LC717A10ARGPGEVB onsemi Description: EVAL BOARD CAP-DGTL CONV LSI
Packaging: Box
Interface: I2C, Serial, SPI
Contents: Board(s)
Voltage - Supply: 2.6V ~ 5.5V
Sensor Type: Touch, Capacitive
Utilized IC / Part: LC717A10AR
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LC71F7000MA3-AH onsemi Description: LC71F7000 - TOUCH SENSOR
auf Bestellung 5000 Stücke:
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LC71F7001PVBS0-TLM-H LC71F7001PVBS0-TLM-H onsemi LC71F7001PVBS0-D.PDF Description: TOUCH SENSOR IC
Packaging: Bulk
DigiKey Programmable: Not Verified
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LC717A10AR-NH LC717A10AR-NH onsemi design-resources?notFound=null Description: IC TOUCH SENSOR CAP-DGTL 28VCT
auf Bestellung 8000 Stücke:
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LC717A00ARZ-NH LC717A00ARZ-NH onsemi Description: IC TOUCH SENSOR CAP-DGTL VCT28
auf Bestellung 54000 Stücke:
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LC717A10PJ-AH LC717A10PJ-AH onsemi design-resources?notFound=null Description: IC TOUCH SENSOR 16CH 30SSOP
auf Bestellung 2000 Stücke:
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NCL30186ADR2G NCL30186ADR2G onsemi NCL30186-D.PDF Description: LED DRIVER, AC-DC POWER FACTOR C
Packaging: Bulk
Part Status: Active
auf Bestellung 1400 Stücke:
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NCL30386A1DR2G NCL30386A1DR2G onsemi NCL30386-D.PDF Description: DIMMABLE POWER FACTOR CORRECTED
Packaging: Bulk
Part Status: Active
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NCL30082B3DR2G NCL30082B3DR2G onsemi NCL30082-D.PDF Description: DIMMABLE QUASI-RESONANT PRIMARY
Packaging: Bulk
Part Status: Active
auf Bestellung 309400 Stücke:
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NCL30073SN065T1G NCL30073SN065T1G onsemi NCL30073-D.PDF Description: LED DRIVER, CURRENT-MODE PWM CON
auf Bestellung 2970 Stücke:
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NCL30388A1DR2G onsemi ncl30388-d.pdf Description: IC LED DRVR CTRL DIM 4.7MA 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 14V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C
Applications: LED Lighting
Current - Output / Channel: 4.7mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SOIC
Dimming: Yes
Voltage - Supply (Min): 8.2V
Voltage - Supply (Max): 30V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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NCL30388A1DR2G onsemi ncl30388-d.pdf Description: IC LED DRVR CTRL DIM 4.7MA 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 14V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C
Applications: LED Lighting
Current - Output / Channel: 4.7mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SOIC
Dimming: Yes
Voltage - Supply (Min): 8.2V
Voltage - Supply (Max): 30V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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NLSV4T3234FCT1G NLSV4T3234FCT1G onsemi level-translators?documentNotFound=3&documentId=41887 Description: IC TRNSLTR UNIDIR 11FLIPCHIP
auf Bestellung 40792 Stücke:
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NSVMSB92T1G NSVMSB92T1G onsemi MSB92T1G-D.PDF Description: TRANS PNP 300V 0.15A SC-59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SC-59
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
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2868+0.15 EUR
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MC54HC174AJ MC54HC174AJ onsemi MOTOS12201-1.pdf?t.download=true&u=5oefqw Description: D FLIP-FLOP, HC/UH SERIES, 6-BIT
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CS5323GDW20 CS5323GDW20 onsemi ONSMS12322-1.pdf?t.download=true&u=5oefqw Description: SWITCHING CONTROLLER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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CS5323GDWR20 CS5323GDWR20 onsemi CS5323%20Rev7.pdf Description: IC REG CTRLR BUCK 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 800kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.4V ~ 16V
Supplier Device Package: 20-SOIC
Synchronous Rectifier: No
Control Features: Current Limit, Frequency Control
Output Phases: 3
Clock Sync: No
Number of Outputs: 3
auf Bestellung 1000 Stücke:
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249+2.03 EUR
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PCS3H6200AG-06JR PCS3H6200AG-06JR onsemi ONSMS18742-1.pdf?t.download=true&u=5oefqw Description: PLL BASED CLOCK DRIVER
Packaging: Bulk
auf Bestellung 22500 Stücke:
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PCP1204-TD-H onsemi Description: BIP NPN 1.5A 50V
auf Bestellung 30529 Stücke:
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2885+0.18 EUR
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PCV7683DQB5TG onsemi Description: PCV7683DQB5TG
Produkt ist nicht verfügbar
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PCS3I6100AG-06JR PCS3I6100AG-06JR onsemi Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 15000 Stücke:
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PCS3I7100AG-06JR PCS3I7100AG-06JR onsemi Description: IC CLK EMI REDUCTION FREQ TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 35000 Stücke:
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189+2.6 EUR
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PCS3P7303AG-08CR PCS3P7303AG-08CR onsemi design-resources?notFound=null Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P7303AG-08CR PCS3P7303AG-08CR onsemi design-resources?notFound=null Description: IC CLK EMI REDUCTION FREQ 8WDFN
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PCS3P7303AG-08CR PCS3P7303AG-08CR onsemi design-resources?notFound=null Description: IC CLK EMI REDUCTION FREQ 8WDFN
auf Bestellung 424354 Stücke:
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628+0.84 EUR
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PCS3P73U00AG08TR PCS3P73U00AG08TR onsemi PCS3P73U00-D.pdf Description: IC CLK EMI REDUCTION FREQ 8TSSOP
auf Bestellung 23950 Stücke:
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224+2.38 EUR
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PCS3I6200AG-06JR PCS3I6200AG-06JR onsemi Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 120MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 385000 Stücke:
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167+2.74 EUR
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PCP1203-TD-H PCP1203-TD-H onsemi ena1348-d.pdf Description: TRANS NPN 30V 1.5A PCP
auf Bestellung 14950 Stücke:
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2275+0.23 EUR
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NVMFS5C430NLAFT1G NVMFS5C430NLAFT1G onsemi nvmfs5c430nl-d.pdf Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5C430NLAFT1G NVMFS5C430NLAFT1G onsemi nvmfs5c430nl-d.pdf Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 896 Stücke:
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4+5.24 EUR
10+3.42 EUR
100+2.39 EUR
500+2.06 EUR
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NVMFS5C612NLAFT1G NVMFS5C612NLAFT1G onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C612NLAFT1G NVMFS5C612NLAFT1G onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C682NLAFT1G NVMFS5C682NLAFT1G onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13500 Stücke:
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1500+0.51 EUR
3000+0.47 EUR
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NVMFS5C682NLAFT1G NVMFS5C682NLAFT1G onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13810 Stücke:
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9+1.99 EUR
15+1.25 EUR
100+0.82 EUR
500+0.64 EUR
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NVMFS5C468NLAFT1G NVMFS5C468NLAFT1G onsemi nvmfs5c468nl-d.pdf Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C468NLAFT1G NVMFS5C468NLAFT1G onsemi nvmfs5c468nl-d.pdf Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H858NLWFT1G NVMFS6H858NLWFT1G onsemi nvmfs6h858nl-d.pdf Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H858NLT1G NVMFS6H858NLT1G onsemi nvmfs6h858nl-d.pdf Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H864NLT1G NVMFS6H864NLT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H864NLT1G NVMFS6H864NLT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H818NT1G NVMFS6H818NT1G onsemi NVMFS6H818N-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 80
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NVMFS6B14NLT1G NVMFS6B14NLT1G onsemi Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H801NLWFT1G NVMFS6H801NLWFT1G onsemi nvmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6B03NLT3G NVMFS6B03NLT3G onsemi nvmfs6b03nl-d.pdf Description: MOSFET N-CH 100V 20A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.9W (Ta), 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6B14NLWFT3G NVMFS6B14NLWFT3G onsemi NVMFS6B14NLD.PDF Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6B85NLWFT3G NVMFS6B85NLWFT3G onsemi nvmfs6b85nl-d.pdf Description: MOSFET N-CH 100V 5.6A/19A 5DFN
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NVMFS6B25NLT1G NVMFS6B25NLT1G onsemi Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H864NLWFT1G NVMFS6H864NLWFT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6B05NLT1G NVMFS6B05NLT1G onsemi nvmfs6b05nl-d.pdf Description: MOSFET N-CH 100V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H836NLT1G NVMFS6H836NLT1G onsemi nvmfs6h836nl-d.pdf Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6B85NLT1G NVMFS6B85NLT1G onsemi nvmfs6b85nl-d.pdf Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H801NLT1G NVMFS6H801NLT1G onsemi nvmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
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NVMFS6B75NLWFT3G NVMFS6B75NLWFT3G onsemi NVMFS6B75NL-D.PDF Description: MOSFET N-CH 100V 7A/28A 5DFN
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NVMFS6H824NLWFT1G NVMFS6H824NLWFT1G onsemi nvmfs6h824nl-d.pdf Description: MOSFET N-CH 80V 20A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H858NT1G NVMFS6H858NT1G onsemi nvmfs6h858n-d.pdf Description: MOSFET N-CH 80V 8.4A/29A 5DFN
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MM5Z22VT5G
MM5Z22VT5G
Hersteller: onsemi
Description: ZEN SOD523 LOW IZ REG 0.5W 22V
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
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Anzahl Preis
8000+0.065 EUR
16000+0.054 EUR
24000+0.053 EUR
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SZMM5Z22VT1G
SZMM5Z22VT1G
Hersteller: onsemi
Description: ZEN SOD523 LOW IZ REG 0.5W 22V
Tolerance: ±5.68%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Qualification: AEC-Q101
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Anzahl Preis
3000+0.1 EUR
6000+0.094 EUR
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AMIS-49200-XTD amis-492x0-d.pdf
AMIS-49200-XTD
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 44LQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 6.2V
Number of Drivers/Receivers: 1/1
Data Rate: 32.25Kbps
Protocol: MDS-MAU
Supplier Device Package: 44-LQFP (10x10)
Receiver Hysteresis: 250 mV
Duplex: Half
Part Status: Active
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FDMS86163P-23507X
FDMS86163P-23507X
Hersteller: onsemi
Description: FET -100V 22.0 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4085 pF @ 50 V
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STR-SENSORS-GEVK STR-SENSORS-GEVK_USER_GUIDE.PDF
STR-SENSORS-GEVK
Hersteller: onsemi
Description: STRATA ENABLED TOUCH, PROXIMITY,
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+255.15 EUR
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LC717A10ARGPGEVB
LC717A10ARGPGEVB
Hersteller: onsemi
Description: EVAL BOARD CAP-DGTL CONV LSI
Packaging: Box
Interface: I2C, Serial, SPI
Contents: Board(s)
Voltage - Supply: 2.6V ~ 5.5V
Sensor Type: Touch, Capacitive
Utilized IC / Part: LC717A10AR
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.69 EUR
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LC71F7000MA3-AH
Hersteller: onsemi
Description: LC71F7000 - TOUCH SENSOR
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
201+2.46 EUR
Mindestbestellmenge: 201
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LC71F7001PVBS0-TLM-H LC71F7001PVBS0-D.PDF
LC71F7001PVBS0-TLM-H
Hersteller: onsemi
Description: TOUCH SENSOR IC
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
104+4.88 EUR
Mindestbestellmenge: 104
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LC717A10AR-NH design-resources?notFound=null
LC717A10AR-NH
Hersteller: onsemi
Description: IC TOUCH SENSOR CAP-DGTL 28VCT
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
231+2.13 EUR
Mindestbestellmenge: 231
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LC717A00ARZ-NH
LC717A00ARZ-NH
Hersteller: onsemi
Description: IC TOUCH SENSOR CAP-DGTL VCT28
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
126+3.91 EUR
Mindestbestellmenge: 126
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LC717A10PJ-AH design-resources?notFound=null
LC717A10PJ-AH
Hersteller: onsemi
Description: IC TOUCH SENSOR 16CH 30SSOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
172+2.87 EUR
Mindestbestellmenge: 172
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NCL30186ADR2G NCL30186-D.PDF
NCL30186ADR2G
Hersteller: onsemi
Description: LED DRIVER, AC-DC POWER FACTOR C
Packaging: Bulk
Part Status: Active
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
597+0.88 EUR
Mindestbestellmenge: 597
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NCL30386A1DR2G NCL30386-D.PDF
NCL30386A1DR2G
Hersteller: onsemi
Description: DIMMABLE POWER FACTOR CORRECTED
Packaging: Bulk
Part Status: Active
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
309+1.47 EUR
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NCL30082B3DR2G NCL30082-D.PDF
NCL30082B3DR2G
Hersteller: onsemi
Description: DIMMABLE QUASI-RESONANT PRIMARY
Packaging: Bulk
Part Status: Active
auf Bestellung 309400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
409+1.11 EUR
Mindestbestellmenge: 409
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NCL30073SN065T1G NCL30073-D.PDF
NCL30073SN065T1G
Hersteller: onsemi
Description: LED DRIVER, CURRENT-MODE PWM CON
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
928+0.54 EUR
Mindestbestellmenge: 928
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NCL30388A1DR2G ncl30388-d.pdf
Hersteller: onsemi
Description: IC LED DRVR CTRL DIM 4.7MA 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 14V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C
Applications: LED Lighting
Current - Output / Channel: 4.7mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SOIC
Dimming: Yes
Voltage - Supply (Min): 8.2V
Voltage - Supply (Max): 30V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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NCL30388A1DR2G ncl30388-d.pdf
Hersteller: onsemi
Description: IC LED DRVR CTRL DIM 4.7MA 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Voltage - Output: 14V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 150kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C
Applications: LED Lighting
Current - Output / Channel: 4.7mA
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SOIC
Dimming: Yes
Voltage - Supply (Min): 8.2V
Voltage - Supply (Max): 30V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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NLSV4T3234FCT1G level-translators?documentNotFound=3&documentId=41887
NLSV4T3234FCT1G
Hersteller: onsemi
Description: IC TRNSLTR UNIDIR 11FLIPCHIP
auf Bestellung 40792 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
358+1.49 EUR
Mindestbestellmenge: 358
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NSVMSB92T1G MSB92T1G-D.PDF
NSVMSB92T1G
Hersteller: onsemi
Description: TRANS PNP 300V 0.15A SC-59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SC-59
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2868+0.15 EUR
Mindestbestellmenge: 2868
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MC54HC174AJ MOTOS12201-1.pdf?t.download=true&u=5oefqw
MC54HC174AJ
Hersteller: onsemi
Description: D FLIP-FLOP, HC/UH SERIES, 6-BIT
Produkt ist nicht verfügbar
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CS5323GDW20 ONSMS12322-1.pdf?t.download=true&u=5oefqw
CS5323GDW20
Hersteller: onsemi
Description: SWITCHING CONTROLLER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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CS5323GDWR20 CS5323%20Rev7.pdf
CS5323GDWR20
Hersteller: onsemi
Description: IC REG CTRLR BUCK 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 800kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.4V ~ 16V
Supplier Device Package: 20-SOIC
Synchronous Rectifier: No
Control Features: Current Limit, Frequency Control
Output Phases: 3
Clock Sync: No
Number of Outputs: 3
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
249+2.03 EUR
Mindestbestellmenge: 249
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PCS3H6200AG-06JR ONSMS18742-1.pdf?t.download=true&u=5oefqw
PCS3H6200AG-06JR
Hersteller: onsemi
Description: PLL BASED CLOCK DRIVER
Packaging: Bulk
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
166+2.96 EUR
Mindestbestellmenge: 166
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PCP1204-TD-H
Hersteller: onsemi
Description: BIP NPN 1.5A 50V
auf Bestellung 30529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2885+0.18 EUR
Mindestbestellmenge: 2885
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PCV7683DQB5TG
Hersteller: onsemi
Description: PCV7683DQB5TG
Produkt ist nicht verfügbar
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PCS3I6100AG-06JR
PCS3I6100AG-06JR
Hersteller: onsemi
Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
167+2.74 EUR
Mindestbestellmenge: 167
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PCS3I7100AG-06JR
PCS3I7100AG-06JR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.6 EUR
Mindestbestellmenge: 189
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PCS3P7303AG-08CR design-resources?notFound=null
PCS3P7303AG-08CR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
Produkt ist nicht verfügbar
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PCS3P7303AG-08CR design-resources?notFound=null
PCS3P7303AG-08CR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
Produkt ist nicht verfügbar
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PCS3P7303AG-08CR design-resources?notFound=null
PCS3P7303AG-08CR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8WDFN
auf Bestellung 424354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
628+0.84 EUR
Mindestbestellmenge: 628
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PCS3P73U00AG08TR PCS3P73U00-D.pdf
PCS3P73U00AG08TR
Hersteller: onsemi
Description: IC CLK EMI REDUCTION FREQ 8TSSOP
auf Bestellung 23950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
224+2.38 EUR
Mindestbestellmenge: 224
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PCS3I6200AG-06JR
PCS3I6200AG-06JR
Hersteller: onsemi
Description: IC CLK GEN VDP MULT PIXEL TSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 120MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: TSOT-23-6
PLL: Yes
Divider/Multiplier: No/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 385000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
167+2.74 EUR
Mindestbestellmenge: 167
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PCP1203-TD-H ena1348-d.pdf
PCP1203-TD-H
Hersteller: onsemi
Description: TRANS NPN 30V 1.5A PCP
auf Bestellung 14950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2275+0.23 EUR
Mindestbestellmenge: 2275
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NVMFS5C430NLAFT1G nvmfs5c430nl-d.pdf
NVMFS5C430NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C430NLAFT1G nvmfs5c430nl-d.pdf
NVMFS5C430NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.24 EUR
10+3.42 EUR
100+2.39 EUR
500+2.06 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C612NLAFT1G nvmfs5c612nl-d.pdf
NVMFS5C612NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C612NLAFT1G nvmfs5c612nl-d.pdf
NVMFS5C612NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C682NLAFT1G nvmfs5c682nl-d.pdf
NVMFS5C682NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.51 EUR
3000+0.47 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C682NLAFT1G nvmfs5c682nl-d.pdf
NVMFS5C682NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 13810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
15+1.25 EUR
100+0.82 EUR
500+0.64 EUR
Mindestbestellmenge: 9
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NVMFS5C468NLAFT1G nvmfs5c468nl-d.pdf
NVMFS5C468NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C468NLAFT1G nvmfs5c468nl-d.pdf
NVMFS5C468NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
11+1.69 EUR
100+1.14 EUR
Mindestbestellmenge: 7
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NVMFS6H858NLWFT1G nvmfs6h858nl-d.pdf
NVMFS6H858NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H858NLT1G nvmfs6h858nl-d.pdf
NVMFS6H858NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.49 EUR
3000+0.45 EUR
Mindestbestellmenge: 1500
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NVMFS6H864NLT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.71 EUR
3000+0.65 EUR
4500+0.63 EUR
7500+0.6 EUR
10500+0.59 EUR
Mindestbestellmenge: 1500
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NVMFS6H864NLT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 19273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.55 EUR
100+1.04 EUR
500+0.82 EUR
Mindestbestellmenge: 8
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NVMFS6H818NT1G NVMFS6H818N-D.PDF
NVMFS6H818NT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 80
Produkt ist nicht verfügbar
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NVMFS6B14NLT1G
NVMFS6B14NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H801NLWFT1G nvmfs6h801nl-d.pdf
NVMFS6H801NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6B03NLT3G nvmfs6b03nl-d.pdf
NVMFS6B03NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 20A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.9W (Ta), 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6B14NLWFT3G NVMFS6B14NLD.PDF
NVMFS6B14NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6B85NLWFT3G nvmfs6b85nl-d.pdf
NVMFS6B85NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A/19A 5DFN
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NVMFS6B25NLT1G
NVMFS6B25NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H864NLWFT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B05NLT1G nvmfs6b05nl-d.pdf
NVMFS6B05NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H836NLT1G nvmfs6h836nl-d.pdf
NVMFS6H836NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.84 EUR
Mindestbestellmenge: 1500
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NVMFS6B85NLT1G nvmfs6b85nl-d.pdf
NVMFS6B85NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H801NLT1G nvmfs6h801nl-d.pdf
NVMFS6H801NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B75NLWFT3G NVMFS6B75NL-D.PDF
NVMFS6B75NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/28A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H824NLWFT1G nvmfs6h824nl-d.pdf
NVMFS6H824NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.81 EUR
Mindestbestellmenge: 1500
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NVMFS6H858NT1G nvmfs6h858n-d.pdf
NVMFS6H858NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Produkt ist nicht verfügbar
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