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NVMFS5C612NLAFT1G NVMFS5C612NLAFT1G onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 38A/250A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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NVMFS5C612NLAFT1G NVMFS5C612NLAFT1G onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 38A/250A 5DFN
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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NVMFS5C682NLAFT1G NVMFS5C682NLAFT1G onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C682NLAFT1G NVMFS5C682NLAFT1G onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C468NLAFT1G NVMFS5C468NLAFT1G onsemi nvmfs5c468nl-d.pdf Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C468NLAFT1G NVMFS5C468NLAFT1G onsemi nvmfs5c468nl-d.pdf Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H858NLWFT1G NVMFS6H858NLWFT1G onsemi nvmfs6h858nl-d.pdf Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS6H858NLT1G NVMFS6H858NLT1G onsemi nvmfs6h858nl-d.pdf Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H864NLT1G NVMFS6H864NLT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
FET Type: N-Channel
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NVMFS6H864NLT1G NVMFS6H864NLT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
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NVMFS6H818NT1G NVMFS6H818NT1G onsemi NVMFS6H818N-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 80
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NVMFS6B14NLT1G NVMFS6B14NLT1G onsemi Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H801NLWFT1G NVMFS6H801NLWFT1G onsemi nvmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6B03NLT3G NVMFS6B03NLT3G onsemi nvmfs6b03nl-d.pdf Description: MOSFET N-CH 100V 20A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.9W (Ta), 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6B14NLWFT3G NVMFS6B14NLWFT3G onsemi NVMFS6B14NLD.PDF Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6B85NLWFT3G NVMFS6B85NLWFT3G onsemi nvmfs6b85nl-d.pdf Description: MOSFET N-CH 100V 5.6A/19A 5DFN
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NVMFS6B25NLT1G NVMFS6B25NLT1G onsemi Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H864NLWFT1G NVMFS6H864NLWFT1G onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6B05NLT1G NVMFS6B05NLT1G onsemi nvmfs6b05nl-d.pdf Description: MOSFET N-CH 100V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H836NLT1G NVMFS6H836NLT1G onsemi nvmfs6h836nl-d.pdf Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6B85NLT1G NVMFS6B85NLT1G onsemi nvmfs6b85nl-d.pdf Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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NVMFS6H801NLT1G NVMFS6H801NLT1G onsemi nvmfs6h801nl-d.pdf Description: MOSFET N-CH 80V 24A/160A 5DFN
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NVMFS6B75NLWFT3G NVMFS6B75NLWFT3G onsemi NVMFS6B75NL-D.PDF Description: MOSFET N-CH 100V 7A/28A 5DFN
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NVMFS6H824NLWFT1G NVMFS6H824NLWFT1G onsemi nvmfs6h824nl-d.pdf Description: MOSFET N-CH 80V 20A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H858NT1G NVMFS6H858NT1G onsemi nvmfs6h858n-d.pdf Description: MOSFET N-CH 80V 8.4A/29A 5DFN
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NVMFS6H858NT1G NVMFS6H858NT1G onsemi nvmfs6h858n-d.pdf Description: MOSFET N-CH 80V 8.4A/29A 5DFN
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NVMFS6H818NLWFT1G NVMFS6H818NLWFT1G onsemi nvmfs6h818nl-d.pdf Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H848NLT1G NVMFS6H848NLT1G onsemi nvmfs6h848nl-d.pdf Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
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AS0149ATSC00XUEA0-DPBR onsemi Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
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AS0149ATSC00XUEA0-DRBR onsemi Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
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AS0149ATSC00XUEA0-TRBR onsemi Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Last Time Buy
Frames per Second: 30
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MMBZ5234B MMBZ5234B onsemi FAIR-S-A0002364146-1.pdf?t.download=true&u=5oefqw Description: MMBZ5234 - ZENER DIODE, 6.2V, 5%
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
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SZMMBZ47VALT1G SZMMBZ47VALT1G onsemi mmbz5v6alt1-d.pdf Description: DIODE ZENER 38V SOT23-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 38 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Zener (Nom) (Vz): 38 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SZMMBZ47VALT1G SZMMBZ47VALT1G onsemi mmbz5v6alt1-d.pdf Description: DIODE ZENER 38V SOT23-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 38 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Zener (Nom) (Vz): 38 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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MC14518BDWG MC14518BDWG onsemi mc14518b-d.pdf Description: IC BCD COUNTER DUAL 4BIT 16SOIC
Number of Bits per Element: 4
Count Rate: 8 MHz
Voltage - Supply: 3 V ~ 18 V
Part Status: Active
Supplier Device Package: 16-SOIC
Timing: Synchronous
Trigger Type: Positive, Negative
Direction: Up
Operating Temperature: -55°C ~ 125°C
Reset: Asynchronous
Logic Type: BCD Counter
Number of Elements: 2
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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FAN73895MX FAN73895MX onsemi fan73895-d.pdf Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
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FAN73895MX FAN73895MX onsemi fan73895-d.pdf Description: IC GATE DRVR HALF-BRIDGE 28SOIC
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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NTMJS1D15N03CGTWG NTMJS1D15N03CGTWG onsemi ntmjs1d15n03cg-d.pdf Description: WIDE SOA
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 257A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 160µA
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
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NTSV20100CTH NTSV20100CTH onsemi ONSMS21627-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY
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AX-SFAZ-API-1-01-TX30 AX-SFAZ-API-1-01-TX30 onsemi ax-sfeu-d.pdf Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Current - Transmitting: 230mA
Data Rate (Max): 600bps
Current - Receiving: 34mA
Protocol: SIGFOX™
Power - Output: 24dBm
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
Frequency: 922MHz
Mounting Type: Surface Mount
Sensitivity: -128dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Serial Interfaces: SPI, UART
RF Family/Standard: General ISM < 1GHz
Modulation: FSK, GFSK
GPIO: 8
Supplier Device Package: 40-QFN (7x5)
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AX-SFJK-1-01-TX30 AX-SFJK-1-01-TX30 onsemi ax-sfjk-d.pdf Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -126dBm
Mounting Type: Surface Mount
Frequency: 922MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 13dBm
Protocol: SIGFOX™
Current - Receiving: 15mA
Data Rate (Max): 600bps
Current - Transmitting: 45mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 8
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
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AX-SFEU-1-03-TX30 AX-SFEU-1-03-TX30 onsemi ax-sfeu-d.pdf Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -126dBm
Mounting Type: Surface Mount
Frequency: 868MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.1V ~ 3.6V
Power - Output: 14dBm
Current - Receiving: 10mA
Data Rate (Max): 600bps
Current - Transmitting: 19mA ~ 49mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 10
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
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AX-SFJK-API-1-01-TX30 AX-SFJK-API-1-01-TX30 onsemi ax-sfjk-d.pdf Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -126dBm
Mounting Type: Surface Mount
Frequency: 922MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 13dBm
Protocol: SIGFOX™
Current - Receiving: 15mA
Data Rate (Max): 600bps
Current - Transmitting: 45mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 8
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
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AX-SFUS-API-1-01-TX30 AX-SFUS-API-1-01-TX30 onsemi ax-sfus-d.pdf Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -128dBm
Mounting Type: Surface Mount
Frequency: 902MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 24dBm
Protocol: SIGFOX™
Current - Receiving: 34mA
Data Rate (Max): 600bps
Current - Transmitting: 230mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 8
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
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NCV4296-2CSN33T1G NCV4296-2CSN33T1G onsemi ncv4296-2c-d.pdf Description: IC REG LINEAR 3.3V 30MA 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.25V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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NCV4296-2CSN33T1G NCV4296-2CSN33T1G onsemi ncv4296-2c-d.pdf Description: IC REG LINEAR 3.3V 30MA 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.25V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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NRVBA210LT3G NRVBA210LT3G onsemi ONSM-S-A0009565014-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY POWER RECTIFIER, SURFAC
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SBS010M-TL-E onsemi Description: SCHOTTKY BARRIER RECTIFIER DIODE
Packaging: Bulk
Part Status: Active
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NCV84090DR2G NCV84090DR2G onsemi ncv84090-d.pdf Description: 90MOHM HIGH SIDE SMARTFET
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
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NCV84090DR2G NCV84090DR2G onsemi ncv84090-d.pdf Description: 90MOHM HIGH SIDE SMARTFET
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
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MC74HC7266AF MC74HC7266AF onsemi Description: IC GATE XNOR 4CH 2-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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MC74HC7266AFEL onsemi Description: IC GATE XNOR 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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FGHL50T65MQDT FGHL50T65MQDT onsemi fghl50t65mqdt-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/90ns
Switching Energy: 1.19mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 600 Stücke:
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510+4.51 EUR
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FGHL50T65MQDTL4 FGHL50T65MQDTL4 onsemi fghl50t65mqdtl4-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/336ns
Switching Energy: 1mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 30Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
auf Bestellung 3809 Stücke:
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FFSP0465A FFSP0465A onsemi FFSP0465A-D.PDF Description: SIC DIODE - 650V, 4A, TO-220-2
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FFSH4065A FFSH4065A onsemi ffsh4065a-d.pdf Description: DIODE SIL CARB 650V 48A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 48A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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MC74LVX8051DTR2G MC74LVX8051DTR2G onsemi mc74lvx8051-d.pdf Description: IC MUX 8:1 25OHM 16TSSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF
Channel-to-Channel Matching (ΔRon): 8Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 2.5V ~ 6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 80MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MC74LVX8051DTR2G MC74LVX8051DTR2G onsemi mc74lvx8051-d.pdf Description: IC MUX 8:1 25OHM 16TSSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF
Channel-to-Channel Matching (ΔRon): 8Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 2.5V ~ 6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 80MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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FGHL40T65MQDT FGHL40T65MQDT onsemi fghl40t65mqdt-d.pdf Description: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/75ns
Switching Energy: 880µJ (on), 490µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
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AFGHL40T65RQDN AFGHL40T65RQDN onsemi AFGHL40T65RQDN-D.PDF Description: IGBT FIELD STOP 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/77ns
Switching Energy: 1.14mJ (on), 740µJ (off)
Test Condition: 400V, 40A, 2.5Ohm, 15V
Gate Charge: 47 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 288 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 400 Stücke:
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2+11.52 EUR
30+6.57 EUR
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NVMFS5C612NLAFT1G nvmfs5c612nl-d.pdf
NVMFS5C612NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVMFS5C612NLAFT1G nvmfs5c612nl-d.pdf
NVMFS5C612NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
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NVMFS5C682NLAFT1G nvmfs5c682nl-d.pdf
NVMFS5C682NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C682NLAFT1G nvmfs5c682nl-d.pdf
NVMFS5C682NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 207 Stücke:
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9+2.49 EUR
14+1.57 EUR
100+1.04 EUR
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NVMFS5C468NLAFT1G nvmfs5c468nl-d.pdf
NVMFS5C468NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C468NLAFT1G nvmfs5c468nl-d.pdf
NVMFS5C468NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CH 40V 13A/37A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
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7+3.2 EUR
11+2.01 EUR
100+1.36 EUR
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NVMFS6H858NLWFT1G nvmfs6h858nl-d.pdf
NVMFS6H858NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H858NLT1G nvmfs6h858nl-d.pdf
NVMFS6H858NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.7A/30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
1500+0.58 EUR
3000+0.54 EUR
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NVMFS6H864NLT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
FET Type: N-Channel
auf Bestellung 18000 Stücke:
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AnzahlPrivatkunde
1500+0.84 EUR
3000+0.77 EUR
4500+0.75 EUR
7500+0.71 EUR
10500+0.7 EUR
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NVMFS6H864NLT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
auf Bestellung 19273 Stücke:
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AnzahlPrivatkunde
8+2.92 EUR
12+1.84 EUR
100+1.24 EUR
500+0.98 EUR
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NVMFS6H818NT1G NVMFS6H818N-D.PDF
NVMFS6H818NT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 80
Produkt ist nicht verfügbar
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NVMFS6B14NLT1G
NVMFS6B14NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H801NLWFT1G nvmfs6h801nl-d.pdf
NVMFS6H801NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B03NLT3G nvmfs6b03nl-d.pdf
NVMFS6B03NLT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 20A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.9W (Ta), 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B14NLWFT3G NVMFS6B14NLD.PDF
NVMFS6B14NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 11A/55A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B85NLWFT3G nvmfs6b85nl-d.pdf
NVMFS6B85NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B25NLT1G
NVMFS6B25NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 8A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H864NLWFT1G nvmfs6h864nl-d.pdf
NVMFS6H864NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6B05NLT1G nvmfs6b05nl-d.pdf
NVMFS6B05NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H836NLT1G nvmfs6h836nl-d.pdf
NVMFS6H836NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFS6B85NLT1G nvmfs6b85nl-d.pdf
NVMFS6B85NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A/19A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H801NLT1G nvmfs6h801nl-d.pdf
NVMFS6H801NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Produkt ist nicht verfügbar
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NVMFS6B75NLWFT3G NVMFS6B75NL-D.PDF
NVMFS6B75NLWFT3G
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/28A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H824NLWFT1G nvmfs6h824nl-d.pdf
NVMFS6H824NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+2.15 EUR
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NVMFS6H858NT1G nvmfs6h858n-d.pdf
NVMFS6H858NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H858NT1G nvmfs6h858n-d.pdf
NVMFS6H858NT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Produkt ist nicht verfügbar
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NVMFS6H818NLWFT1G nvmfs6h818nl-d.pdf
NVMFS6H818NLWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+3.93 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFS6H848NLT1G nvmfs6h848nl-d.pdf
NVMFS6H848NLT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
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AS0149ATSC00XUEA0-DPBR
Hersteller: onsemi
Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
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AS0149ATSC00XUEA0-DRBR
Hersteller: onsemi
Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Obsolete
Frames per Second: 30
Produkt ist nicht verfügbar
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AS0149ATSC00XUEA0-TRBR
Hersteller: onsemi
Description: 1.3MP 1/3.7 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 89-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.2V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1312H x 992V
Supplier Device Package: 89-IBGA (8x9)
Part Status: Last Time Buy
Frames per Second: 30
Produkt ist nicht verfügbar
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MMBZ5234B FAIR-S-A0002364146-1.pdf?t.download=true&u=5oefqw
MMBZ5234B
Hersteller: onsemi
Description: MMBZ5234 - ZENER DIODE, 6.2V, 5%
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Bulk
auf Bestellung 48000 Stücke:
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AnzahlPrivatkunde
11539+0.058 EUR
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SZMMBZ47VALT1G mmbz5v6alt1-d.pdf
SZMMBZ47VALT1G
Hersteller: onsemi
Description: DIODE ZENER 38V SOT23-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 38 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Zener (Nom) (Vz): 38 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
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SZMMBZ47VALT1G mmbz5v6alt1-d.pdf
SZMMBZ47VALT1G
Hersteller: onsemi
Description: DIODE ZENER 38V SOT23-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 nA @ 38 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Zener (Nom) (Vz): 38 V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 7570 Stücke:
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AnzahlPrivatkunde
25+0.83 EUR
36+0.58 EUR
100+0.3 EUR
500+0.24 EUR
1000+0.18 EUR
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MC14518BDWG mc14518b-d.pdf
MC14518BDWG
Hersteller: onsemi
Description: IC BCD COUNTER DUAL 4BIT 16SOIC
Number of Bits per Element: 4
Count Rate: 8 MHz
Voltage - Supply: 3 V ~ 18 V
Part Status: Active
Supplier Device Package: 16-SOIC
Timing: Synchronous
Trigger Type: Positive, Negative
Direction: Up
Operating Temperature: -55°C ~ 125°C
Reset: Asynchronous
Logic Type: BCD Counter
Number of Elements: 2
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 9476 Stücke:
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AnzahlPrivatkunde
7+3.09 EUR
11+1.9 EUR
47+1.43 EUR
141+1.18 EUR
282+1.06 EUR
517+0.96 EUR
1034+0.88 EUR
2538+0.79 EUR
5029+0.73 EUR
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FAN73895MX fan73895-d.pdf
FAN73895MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.44 EUR
2000+3.31 EUR
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FAN73895MX fan73895-d.pdf
FAN73895MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2947 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.87 EUR
10+6.16 EUR
25+5.82 EUR
100+4.78 EUR
250+4.3 EUR
500+4.14 EUR
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NTMJS1D15N03CGTWG ntmjs1d15n03cg-d.pdf
NTMJS1D15N03CGTWG
Hersteller: onsemi
Description: WIDE SOA
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 257A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 160µA
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Produkt ist nicht verfügbar
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NTSV20100CTH ONSMS21627-1.pdf?t.download=true&u=5oefqw
NTSV20100CTH
Hersteller: onsemi
Description: DIODE SCHOTTKY
Produkt ist nicht verfügbar
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AX-SFAZ-API-1-01-TX30 ax-sfeu-d.pdf
AX-SFAZ-API-1-01-TX30
Hersteller: onsemi
Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Current - Transmitting: 230mA
Data Rate (Max): 600bps
Current - Receiving: 34mA
Protocol: SIGFOX™
Power - Output: 24dBm
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: TxRx + MCU
Frequency: 922MHz
Mounting Type: Surface Mount
Sensitivity: -128dBm
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Serial Interfaces: SPI, UART
RF Family/Standard: General ISM < 1GHz
Modulation: FSK, GFSK
GPIO: 8
Supplier Device Package: 40-QFN (7x5)
Produkt ist nicht verfügbar
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AX-SFJK-1-01-TX30 ax-sfjk-d.pdf
AX-SFJK-1-01-TX30
Hersteller: onsemi
Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -126dBm
Mounting Type: Surface Mount
Frequency: 922MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 13dBm
Protocol: SIGFOX™
Current - Receiving: 15mA
Data Rate (Max): 600bps
Current - Transmitting: 45mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 8
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AX-SFEU-1-03-TX30 ax-sfeu-d.pdf
AX-SFEU-1-03-TX30
Hersteller: onsemi
Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -126dBm
Mounting Type: Surface Mount
Frequency: 868MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.1V ~ 3.6V
Power - Output: 14dBm
Current - Receiving: 10mA
Data Rate (Max): 600bps
Current - Transmitting: 19mA ~ 49mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 10
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AX-SFJK-API-1-01-TX30 ax-sfjk-d.pdf
AX-SFJK-API-1-01-TX30
Hersteller: onsemi
Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -126dBm
Mounting Type: Surface Mount
Frequency: 922MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 13dBm
Protocol: SIGFOX™
Current - Receiving: 15mA
Data Rate (Max): 600bps
Current - Transmitting: 45mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 8
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AX-SFUS-API-1-01-TX30 ax-sfus-d.pdf
AX-SFUS-API-1-01-TX30
Hersteller: onsemi
Description: IC RF TXRX+MCU ISM<1GHZ 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -128dBm
Mounting Type: Surface Mount
Frequency: 902MHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 24dBm
Protocol: SIGFOX™
Current - Receiving: 34mA
Data Rate (Max): 600bps
Current - Transmitting: 230mA
Supplier Device Package: 40-QFN (7x5)
GPIO: 8
Modulation: FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NCV4296-2CSN33T1G ncv4296-2c-d.pdf
NCV4296-2CSN33T1G
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 30MA 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.25V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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3000+0.5 EUR
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NCV4296-2CSN33T1G ncv4296-2c-d.pdf
NCV4296-2CSN33T1G
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 30MA 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.25V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
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NRVBA210LT3G ONSM-S-A0009565014-1.pdf?t.download=true&u=5oefqw
NRVBA210LT3G
Hersteller: onsemi
Description: SCHOTTKY POWER RECTIFIER, SURFAC
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656+0.9 EUR
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SBS010M-TL-E
Hersteller: onsemi
Description: SCHOTTKY BARRIER RECTIFIER DIODE
Packaging: Bulk
Part Status: Active
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2019+0.27 EUR
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NCV84090DR2G ncv84090-d.pdf
NCV84090DR2G
Hersteller: onsemi
Description: 90MOHM HIGH SIDE SMARTFET
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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NCV84090DR2G ncv84090-d.pdf
NCV84090DR2G
Hersteller: onsemi
Description: 90MOHM HIGH SIDE SMARTFET
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Part Status: Active
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MC74HC7266AF
MC74HC7266AF
Hersteller: onsemi
Description: IC GATE XNOR 4CH 2-INP SOEIAJ-14
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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MC74HC7266AFEL
Hersteller: onsemi
Description: IC GATE XNOR 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: XNOR (Exclusive NOR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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FGHL50T65MQDT fghl50t65mqdt-d.pdf
FGHL50T65MQDT
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/90ns
Switching Energy: 1.19mJ (on), 630µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
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FGHL50T65MQDTL4 fghl50t65mqdtl4-d.pdf
FGHL50T65MQDTL4
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/336ns
Switching Energy: 1mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 30Ohm, 15V
Gate Charge: 99 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 268 W
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2+11.98 EUR
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FFSP0465A FFSP0465A-D.PDF
FFSP0465A
Hersteller: onsemi
Description: SIC DIODE - 650V, 4A, TO-220-2
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FFSH4065A ffsh4065a-d.pdf
FFSH4065A
Hersteller: onsemi
Description: DIODE SIL CARB 650V 48A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 48A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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MC74LVX8051DTR2G mc74lvx8051-d.pdf
MC74LVX8051DTR2G
Hersteller: onsemi
Description: IC MUX 8:1 25OHM 16TSSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF
Channel-to-Channel Matching (ΔRon): 8Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 2.5V ~ 6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 80MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MC74LVX8051DTR2G mc74lvx8051-d.pdf
MC74LVX8051DTR2G
Hersteller: onsemi
Description: IC MUX 8:1 25OHM 16TSSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF
Channel-to-Channel Matching (ΔRon): 8Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Voltage - Supply, Single (V+): 2.5V ~ 6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 80MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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FGHL40T65MQDT fghl40t65mqdt-d.pdf
FGHL40T65MQDT
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/75ns
Switching Energy: 880µJ (on), 490µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
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3+9.56 EUR
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AFGHL40T65RQDN AFGHL40T65RQDN-D.PDF
AFGHL40T65RQDN
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26ns/77ns
Switching Energy: 1.14mJ (on), 740µJ (off)
Test Condition: 400V, 40A, 2.5Ohm, 15V
Gate Charge: 47 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 288 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 400 Stücke:
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2+11.52 EUR
30+6.57 EUR
120+5.49 EUR
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