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NCV8716MT25TBG NCV8716MT25TBG onsemi ncv8716-d.pdf Description: IC REG LINEAR 2.5V 80MA 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5.8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
PSRR: 60dB (100kHz)
Voltage Dropout (Max): 0.64V @ 80mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 135000 Stücke:
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725+0.68 EUR
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NCV8715MX12TBG NCV8715MX12TBG onsemi ncv8715-d.pdf Description: IC REG LINEAR 1.2V 50MA 6XDFN
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-XDFN (1.5x1.5)
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 60dB (100kHz)
Protection Features: Over Current, Over Temperature
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LE25S161XBTAG LE25S161XBTAG onsemi le25s161-d.pdf Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Part Status: Active
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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LE25S161XBTAG LE25S161XBTAG onsemi le25s161-d.pdf Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Part Status: Active
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
auf Bestellung 655 Stücke:
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10+4.53 EUR
25+4.32 EUR
50+4.17 EUR
100+4.02 EUR
250+3.84 EUR
500+3.70 EUR
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NCV7755DQR2G NCV7755DQR2G onsemi ncv7755-d.pdf Description: OCTAL HIGH-SIDE DRIVER THAT CAN
Packaging: Tape & Reel (TR)
Features: Auto Restart, Internal PWM, Latch Function, Slew Rate Controlled
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:4
Supplier Device Package: 24-SSOP-EP
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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NCV7755DQR2G NCV7755DQR2G onsemi ncv7755-d.pdf Description: OCTAL HIGH-SIDE DRIVER THAT CAN
Packaging: Cut Tape (CT)
Features: Auto Restart, Internal PWM, Latch Function, Slew Rate Controlled
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:4
Supplier Device Package: 24-SSOP-EP
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7397 Stücke:
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10+7.10 EUR
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100+5.97 EUR
250+5.92 EUR
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FR015L3EZ onsemi fr015l3ez-d.pdf Description: FR015L3 - LOW-SIDE REVERSE BIAS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MMFZ8V2T3G MMFZ8V2T3G onsemi Description: DIODE ZENER 8.2V 500MW SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
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11539+0.05 EUR
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FDMC86184 FDMC86184 onsemi fdmc86184-d.pdf Description: MOSFET N-CH 100V 57A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 21A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V
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FDMC86184 FDMC86184 onsemi fdmc86184-d.pdf Description: MOSFET N-CH 100V 57A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 21A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V
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100+1.92 EUR
500+1.55 EUR
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MCH5835-TL-E onsemi Description: NCH+SBD 2.5V DRIVE SERIES
Packaging: Bulk
Part Status: Active
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MCH5836-TL-E onsemi Description: PCH+SBD 1.8V DRIVE SERIES
Packaging: Bulk
Part Status: Active
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MCH5837-TL-E MCH5837-TL-E onsemi Description: MOSFET N-CH 20V 2A 5MCPH
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 145mOhm @ 1A, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 5-MCPH
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
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MOC3071TVM MOC3071TVM onsemi moc3072m-d.pdf Description: OPTOISO 4.17KV TRIAC 1CH 6-PDIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL, VDE
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-PDIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
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NLV14022BDR2G NLV14022BDR2G onsemi mc14022b-d.pdf Description: IC OCTAL COUNTER 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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NVMYS8D0N04CTWG NVMYS8D0N04CTWG onsemi nvmys8d0n04c-d.pdf Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
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NVMYS8D0N04CTWG NVMYS8D0N04CTWG onsemi nvmys8d0n04c-d.pdf Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
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HCPL0639 HCPL0639 onsemi ONSM-S-A0003590047-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 3.75KV 2CH OPN COL 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 17ns, 5ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 15 mA
auf Bestellung 2894 Stücke:
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10+7.01 EUR
100+5.63 EUR
500+5.02 EUR
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CAT93C66YI-TE13 onsemi CATSS01366-1.pdf?t.download=true&u=5oefqw Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
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CAT93C66Y onsemi CATSS01366-1.pdf?t.download=true&u=5oefqw Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
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NC7WV07L6X NC7WV07L6X onsemi nc7wv07-d.pdf Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Produkt ist nicht verfügbar
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NC7WV07L6X NC7WV07L6X onsemi nc7wv07-d.pdf Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Produkt ist nicht verfügbar
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MOC3020TVM MOC3020TVM onsemi moc3023m-d.pdf Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 30mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 757 Stücke:
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20+0.92 EUR
100+0.62 EUR
500+0.50 EUR
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NSVMMUN2135LT1G NSVMMUN2135LT1G onsemi dta123j-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
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3000+0.09 EUR
6000+0.08 EUR
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NSVMMUN2135LT1G NSVMMUN2135LT1G onsemi dta123j-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
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49+0.36 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.10 EUR
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NSVMMUN2131LT1G NSVMMUN2131LT1G onsemi dta123e-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
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3000+0.05 EUR
6000+0.05 EUR
9000+0.04 EUR
Mindestbestellmenge: 3000
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NSVMMUN2131LT1G NSVMMUN2131LT1G onsemi dta123e-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
108+0.16 EUR
176+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
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MUN2235T1G MUN2235T1G onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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MUN2235T1G MUN2235T1G onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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MUN2214T1G MUN2214T1G onsemi dtc114y-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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MMUN2130LT1G MMUN2130LT1G onsemi dta113e-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
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MMUN2130LT1G MMUN2130LT1G onsemi dta113e-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 29673 Stücke:
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NLAS5213AMUT NLAS5213AMUT onsemi CYPRS09162-1.pdf?t.download=true&u=5oefqw Description: IC SWITCH DPST 8UDFN
Packaging: Bulk
Part Status: Active
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
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NLAS9041DFT2G NLAS9041DFT2G onsemi ONSMS13587-1.pdf?t.download=true&u=5oefqw Description: SPDT, 1 FUNC, 1 CHANNEL, PDSO6
Packaging: Bulk
Part Status: Active
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SZMM5Z5V6ST1G SZMM5Z5V6ST1G onsemi mm5z2v4st1-d.pdf Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZMM5Z5V6ST1G SZMM5Z5V6ST1G onsemi mm5z2v4st1-d.pdf Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
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NSZ5V6V2T5G NSZ5V6V2T5G onsemi nsz5v6v2-d.pdf Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 64000 Stücke:
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NSZ5V6V2T5G NSZ5V6V2T5G onsemi nsz5v6v2-d.pdf Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 71960 Stücke:
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J111 J111 onsemi MMBFJ113-D.PDF Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
auf Bestellung 4102 Stücke:
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J113 J113 onsemi mmbfj113-d.pdf Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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J112-D27Z J112-D27Z onsemi j111-d.pdf Description: JFET N-CH 35V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
auf Bestellung 28000 Stücke:
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J112-D27Z J112-D27Z onsemi j111-d.pdf Description: JFET N-CH 35V TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
auf Bestellung 29766 Stücke:
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NVMFD5C478NLWFT1G NVMFD5C478NLWFT1G onsemi nvmfd5c478nl-d.pdf Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C478NLWFT1G NVMFD5C478NLWFT1G onsemi nvmfd5c478nl-d.pdf Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 187445 Stücke:
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BSV52LT1 BSV52LT1 onsemi bsv52lt1-d.pdf Description: TRANS NPN 12V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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2SA1708T-AN 2SA1708T-AN onsemi 2SA1708%2C2SC4488.pdf Description: TRANS PNP 100V 1A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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CM1436-08DE CM1436-08DE onsemi cm1436-d.pdf Description: FILTER RC(PI) 200 OHMS ESD SMD
Packaging: Bulk
Package / Case: 16-WFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 200Ohms, C = 15pF
Height: 0.031" (0.79mm)
Attenuation Value: 30dB @ 800MHz ~ 6GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 100MHz (Cutoff)
Resistance - Channel (Ohms): 200
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
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910+0.51 EUR
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H11L2VM H11L2VM onsemi H11L3M-D.PDF Description: OPTOISO 4.17KV OPN COLL 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 3910 Stücke:
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1000+1.20 EUR
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FDS5690-NBBM009A FDS5690-NBBM009A onsemi fds5690-d.pdf Description: MOSFET N-CH 60V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V
Produkt ist nicht verfügbar
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PCISL9R1560W onsemi Description: IGBT STEALTH DUAL 600V 30A
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ISL9R1560PF2 ISL9R1560PF2 onsemi FAIRS46478-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 600V 15A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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ISL9R860S3ST ISL9R860S3ST onsemi isl9r860s3st-d.pdf Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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ISL9R860S3ST ISL9R860S3ST onsemi isl9r860s3st-d.pdf Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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ISL9R860PF2 ISL9R860PF2 onsemi isl9r860pf2-d.pdf Description: DIODE GEN PURP 600V 8A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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PCISL9R18120W onsemi Description: IGBT PCISL9R18120W
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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FFPF20UP20DPTU FFPF20UP20DPTU onsemi FFPF20UP20DP.pdf Description: DIODE ARRAY GP 200V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
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FFPF20UP30STU FFPF20UP30STU onsemi FFPF20UP30S.pdf Description: DIODE GEN PURP 300V 20A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Produkt ist nicht verfügbar
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FDP7N50 FDP7N50 onsemi fdpf7n50-d.pdf Description: MOSFET N-CH 500V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Produkt ist nicht verfügbar
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LM7818CT LM7818CT onsemi MC7800%28A%2CAE%29%2CNCV7800.pdf Description: IC REG LINEAR 18V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 18V
Part Status: Obsolete
PSRR: 69dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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NVMFS5C670NLAFT1G NVMFS5C670NLAFT1G onsemi nvmfs5c670nl-d.pdf Description: MOSFET N-CHANNEL 60V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NCV8716MT25TBG ncv8716-d.pdf
NCV8716MT25TBG
Hersteller: onsemi
Description: IC REG LINEAR 2.5V 80MA 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5.8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
PSRR: 60dB (100kHz)
Voltage Dropout (Max): 0.64V @ 80mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
725+0.68 EUR
Mindestbestellmenge: 725
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NCV8715MX12TBG ncv8715-d.pdf
NCV8715MX12TBG
Hersteller: onsemi
Description: IC REG LINEAR 1.2V 50MA 6XDFN
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-XDFN (1.5x1.5)
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 60dB (100kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 102000 Stücke:
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Anzahl Preis
641+0.78 EUR
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LE25S161XBTAG le25s161-d.pdf
LE25S161XBTAG
Hersteller: onsemi
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Part Status: Active
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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LE25S161XBTAG le25s161-d.pdf
LE25S161XBTAG
Hersteller: onsemi
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Part Status: Active
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
auf Bestellung 655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.10 EUR
10+4.53 EUR
25+4.32 EUR
50+4.17 EUR
100+4.02 EUR
250+3.84 EUR
500+3.70 EUR
Mindestbestellmenge: 4
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NCV7755DQR2G ncv7755-d.pdf
NCV7755DQR2G
Hersteller: onsemi
Description: OCTAL HIGH-SIDE DRIVER THAT CAN
Packaging: Tape & Reel (TR)
Features: Auto Restart, Internal PWM, Latch Function, Slew Rate Controlled
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:4
Supplier Device Package: 24-SSOP-EP
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+4.84 EUR
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NCV7755DQR2G ncv7755-d.pdf
NCV7755DQR2G
Hersteller: onsemi
Description: OCTAL HIGH-SIDE DRIVER THAT CAN
Packaging: Cut Tape (CT)
Features: Auto Restart, Internal PWM, Latch Function, Slew Rate Controlled
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:4
Supplier Device Package: 24-SSOP-EP
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.28 EUR
10+7.10 EUR
25+6.56 EUR
100+5.97 EUR
250+5.92 EUR
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FR015L3EZ fr015l3ez-d.pdf
Hersteller: onsemi
Description: FR015L3 - LOW-SIDE REVERSE BIAS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MMFZ8V2T3G
MMFZ8V2T3G
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
auf Bestellung 380000 Stücke:
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Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
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FDMC86184 fdmc86184-d.pdf
FDMC86184
Hersteller: onsemi
Description: MOSFET N-CH 100V 57A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 21A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+1.33 EUR
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FDMC86184 fdmc86184-d.pdf
FDMC86184
Hersteller: onsemi
Description: MOSFET N-CH 100V 57A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 21A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V
auf Bestellung 8842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
10+2.78 EUR
100+1.92 EUR
500+1.55 EUR
1000+1.43 EUR
Mindestbestellmenge: 5
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MCH5835-TL-E
Hersteller: onsemi
Description: NCH+SBD 2.5V DRIVE SERIES
Packaging: Bulk
Part Status: Active
auf Bestellung 6000 Stücke:
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Anzahl Preis
4438+0.11 EUR
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MCH5836-TL-E
Hersteller: onsemi
Description: PCH+SBD 1.8V DRIVE SERIES
Packaging: Bulk
Part Status: Active
auf Bestellung 219000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2664+0.18 EUR
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MCH5837-TL-E
MCH5837-TL-E
Hersteller: onsemi
Description: MOSFET N-CH 20V 2A 5MCPH
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 145mOhm @ 1A, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 5-MCPH
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
auf Bestellung 16750 Stücke:
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Anzahl Preis
2664+0.18 EUR
Mindestbestellmenge: 2664
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MOC3071TVM moc3072m-d.pdf
MOC3071TVM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRIAC 1CH 6-PDIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL, VDE
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-PDIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 980 Stücke:
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Anzahl Preis
11+1.71 EUR
15+1.19 EUR
100+0.88 EUR
500+0.75 EUR
Mindestbestellmenge: 11
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NLV14022BDR2G mc14022b-d.pdf
NLV14022BDR2G
Hersteller: onsemi
Description: IC OCTAL COUNTER 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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NVMYS8D0N04CTWG nvmys8d0n04c-d.pdf
NVMYS8D0N04CTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
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NVMYS8D0N04CTWG nvmys8d0n04c-d.pdf
NVMYS8D0N04CTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
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HCPL0639 ONSM-S-A0003590047-1.pdf?t.download=true&u=5oefqw
HCPL0639
Hersteller: onsemi
Description: OPTOISO 3.75KV 2CH OPN COL 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 17ns, 5ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 15 mA
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.36 EUR
10+7.01 EUR
100+5.63 EUR
500+5.02 EUR
1000+4.83 EUR
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CAT93C66YI-TE13 CATSS01366-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
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Anzahl Preis
1268+0.39 EUR
Mindestbestellmenge: 1268
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CAT93C66Y CATSS01366-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 3598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1480+0.33 EUR
Mindestbestellmenge: 1480
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NC7WV07L6X nc7wv07-d.pdf
NC7WV07L6X
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Produkt ist nicht verfügbar
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NC7WV07L6X nc7wv07-d.pdf
NC7WV07L6X
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Produkt ist nicht verfügbar
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MOC3020TVM moc3023m-d.pdf
MOC3020TVM
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 30mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.50 EUR
20+0.92 EUR
100+0.62 EUR
500+0.50 EUR
Mindestbestellmenge: 12
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NSVMMUN2135LT1G dta123j-d.pdf
NSVMMUN2135LT1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
9000+0.07 EUR
Mindestbestellmenge: 3000
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NSVMMUN2135LT1G dta123j-d.pdf
NSVMMUN2135LT1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
49+0.36 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.10 EUR
Mindestbestellmenge: 34
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NSVMMUN2131LT1G dta123e-d.pdf
NSVMMUN2131LT1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.05 EUR
9000+0.04 EUR
Mindestbestellmenge: 3000
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NSVMMUN2131LT1G dta123e-d.pdf
NSVMMUN2131LT1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
108+0.16 EUR
176+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 67
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MUN2235T1G dtc123j-d.pdf
MUN2235T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.05 EUR
15000+0.04 EUR
30000+0.04 EUR
75000+0.03 EUR
Mindestbestellmenge: 3000
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MUN2235T1G dtc123j-d.pdf
MUN2235T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 128829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
69+0.26 EUR
125+0.14 EUR
500+0.09 EUR
1000+0.06 EUR
Mindestbestellmenge: 59
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MUN2214T1G dtc114y-d.pdf
MUN2214T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
86+0.21 EUR
159+0.11 EUR
500+0.09 EUR
1000+0.06 EUR
Mindestbestellmenge: 59
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MMUN2130LT1G dta113e-d.pdf
MMUN2130LT1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.05 EUR
9000+0.04 EUR
Mindestbestellmenge: 3000
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MMUN2130LT1G dta113e-d.pdf
MMUN2130LT1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 29673 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
82+0.22 EUR
151+0.12 EUR
500+0.09 EUR
1000+0.06 EUR
Mindestbestellmenge: 59
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NLAS5213AMUT CYPRS09162-1.pdf?t.download=true&u=5oefqw
NLAS5213AMUT
Hersteller: onsemi
Description: IC SWITCH DPST 8UDFN
Packaging: Bulk
Part Status: Active
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
auf Bestellung 11973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
606+0.81 EUR
Mindestbestellmenge: 606
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NLAS9041DFT2G ONSMS13587-1.pdf?t.download=true&u=5oefqw
NLAS9041DFT2G
Hersteller: onsemi
Description: SPDT, 1 FUNC, 1 CHANNEL, PDSO6
Packaging: Bulk
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1110+0.44 EUR
Mindestbestellmenge: 1110
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SZMM5Z5V6ST1G mm5z2v4st1-d.pdf
SZMM5Z5V6ST1G
Hersteller: onsemi
Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZMM5Z5V6ST1G mm5z2v4st1-d.pdf
SZMM5Z5V6ST1G
Hersteller: onsemi
Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.38 EUR
100+0.26 EUR
Mindestbestellmenge: 32
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NSZ5V6V2T5G nsz5v6v2-d.pdf
NSZ5V6V2T5G
Hersteller: onsemi
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 64000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.18 EUR
16000+0.17 EUR
24000+0.16 EUR
56000+0.15 EUR
Mindestbestellmenge: 8000
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NSZ5V6V2T5G nsz5v6v2-d.pdf
NSZ5V6V2T5G
Hersteller: onsemi
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 71960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
33+0.55 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 27
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J111 MMBFJ113-D.PDF
J111
Hersteller: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
auf Bestellung 4102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
42+0.42 EUR
100+0.23 EUR
500+0.20 EUR
1000+0.16 EUR
Mindestbestellmenge: 25
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J113 mmbfj113-d.pdf
J113
Hersteller: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
auf Bestellung 12914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
37+0.48 EUR
100+0.21 EUR
500+0.20 EUR
1000+0.17 EUR
5000+0.16 EUR
10000+0.15 EUR
Mindestbestellmenge: 29
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J112-D27Z j111-d.pdf
J112-D27Z
Hersteller: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.20 EUR
4000+0.19 EUR
6000+0.18 EUR
20000+0.17 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
J112-D27Z j111-d.pdf
J112-D27Z
Hersteller: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
auf Bestellung 29766 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 21
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NVMFD5C478NLWFT1G nvmfd5c478nl-d.pdf
NVMFD5C478NLWFT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.19 EUR
3000+1.11 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C478NLWFT1G nvmfd5c478nl-d.pdf
NVMFD5C478NLWFT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 187445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.47 EUR
100+1.69 EUR
500+1.35 EUR
Mindestbestellmenge: 5
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BSV52LT1 bsv52lt1-d.pdf
BSV52LT1
Hersteller: onsemi
Description: TRANS NPN 12V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
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2SA1708T-AN 2SA1708%2C2SC4488.pdf
2SA1708T-AN
Hersteller: onsemi
Description: TRANS PNP 100V 1A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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CM1436-08DE cm1436-d.pdf
CM1436-08DE
Hersteller: onsemi
Description: FILTER RC(PI) 200 OHMS ESD SMD
Packaging: Bulk
Package / Case: 16-WFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 200Ohms, C = 15pF
Height: 0.031" (0.79mm)
Attenuation Value: 30dB @ 800MHz ~ 6GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 100MHz (Cutoff)
Resistance - Channel (Ohms): 200
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
auf Bestellung 13664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
910+0.51 EUR
Mindestbestellmenge: 910
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H11L2VM H11L3M-D.PDF
H11L2VM
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 3910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+1.94 EUR
100+1.47 EUR
500+1.26 EUR
1000+1.20 EUR
2000+1.14 EUR
Mindestbestellmenge: 7
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FDS5690-NBBM009A fds5690-d.pdf
FDS5690-NBBM009A
Hersteller: onsemi
Description: MOSFET N-CH 60V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V
Produkt ist nicht verfügbar
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PCISL9R1560W
Hersteller: onsemi
Description: IGBT STEALTH DUAL 600V 30A
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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ISL9R1560PF2 FAIRS46478-1.pdf?t.download=true&u=5oefqw
ISL9R1560PF2
Hersteller: onsemi
Description: DIODE GEN PURP 600V 15A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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ISL9R860S3ST isl9r860s3st-d.pdf
ISL9R860S3ST
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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ISL9R860S3ST isl9r860s3st-d.pdf
ISL9R860S3ST
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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ISL9R860PF2 isl9r860pf2-d.pdf
ISL9R860PF2
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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PCISL9R18120W
Hersteller: onsemi
Description: IGBT PCISL9R18120W
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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FFPF20UP20DPTU FFPF20UP20DP.pdf
FFPF20UP20DPTU
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
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FFPF20UP30STU FFPF20UP30S.pdf
FFPF20UP30STU
Hersteller: onsemi
Description: DIODE GEN PURP 300V 20A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Produkt ist nicht verfügbar
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FDP7N50 fdpf7n50-d.pdf
FDP7N50
Hersteller: onsemi
Description: MOSFET N-CH 500V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Produkt ist nicht verfügbar
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LM7818CT MC7800%28A%2CAE%29%2CNCV7800.pdf
LM7818CT
Hersteller: onsemi
Description: IC REG LINEAR 18V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 18V
Part Status: Obsolete
PSRR: 69dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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NVMFS5C670NLAFT1G nvmfs5c670nl-d.pdf
NVMFS5C670NLAFT1G
Hersteller: onsemi
Description: MOSFET N-CHANNEL 60V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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