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KA431SMF2TF KA431SMF2TF onsemi ka431sl-d.pdf Description: IC VREF SHUNT 36V 2% SOT23F-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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NSVMMBTH81LT3G NSVMMBTH81LT3G onsemi mmbth81-d.pdf Description: RF TRANS PNP 20V 600MHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: SOT-23-3
Part Status: Active
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P6KE16ARL P6KE16ARL onsemi P6KE6.8A_Series.pdf Description: TVS ZENER UNIDIR 600W 16V AXIAL
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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NVTFS5824NLWFTAG NVTFS5824NLWFTAG onsemi nvtfs5824nl-d.pdf Description: MOSFET N-CH 60V 20A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FAM65CR51AXZ2 onsemi fam65cr51axz1-d.pdf Description: APM16 SF3 FRFET & SIC DIODE 51MO
Packaging: Tube
Package / Case: 12-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 2 Independent
Part Status: Active
Current: 64 A
Voltage: 650 V
Produkt ist nicht verfügbar
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FAM65HR51XS2 FAM65HR51XS2 onsemi fam65hr51xs1-d.pdf Description: APM16 CAA H-BRIDGE SF3 FRFET 51M
Packaging: Tube
Package / Case: 16-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: H-Bridge Inverter
Part Status: Active
Current: 64 A
Voltage: 650 V
Produkt ist nicht verfügbar
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FAM65HR51DS1 onsemi fam65hr51ds1-d.pdf Description: FAM65HR51DS1
Packaging: Bulk
Package / Case: 16-SSIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 1 Phase
Part Status: Active
Current: 33 A
Voltage: 650 V
Produkt ist nicht verfügbar
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FAM65CR51AXZ1 onsemi fam65cr51axz1-d.pdf Description: APM16 SF3 FRFET & SIC DIODE 51MO
Packaging: Tube
Package / Case: 12-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 2 Independent
Part Status: Active
Current: 64 A
Voltage: 650 V
Produkt ist nicht verfügbar
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FAM65HR51XS1 FAM65HR51XS1 onsemi fam65hr51xs1-d.pdf Description: APM16 CAA H-BRIDGE SF3 FRFET 51M
Packaging: Tube
Package / Case: 16-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: H-Bridge Inverter
Part Status: Active
Current: 64 A
Voltage: 650 V
Produkt ist nicht verfügbar
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ENGFAM65CR51AXZ1 onsemi Description: IC
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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ENGFAM65CR51AXZ2 onsemi Description: IC
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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NV25160DWHFT3G NV25160DWHFT3G onsemi nv25080-d.pdf Description: IC EEPROM 16KBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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NV25640DTHFT3G NV25640DTHFT3G onsemi nv25080-d.pdf Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 8K x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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NV25640DTHFT3G NV25640DTHFT3G onsemi nv25080-d.pdf Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 8K x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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N24S64BC4DYT3G N24S64BC4DYT3G onsemi n24s64b-d.pdf Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.77x0.77)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
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N24S64BC4DYT3G N24S64BC4DYT3G onsemi n24s64b-d.pdf Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.77x0.77)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
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CAT34C02YI-GT5A CAT34C02YI-GT5A onsemi cat34c02-d.pdf Description: IC EEPROM 2KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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CAT34C02YI-GT5A CAT34C02YI-GT5A onsemi cat34c02-d.pdf Description: IC EEPROM 2KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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GBPC2504 GBPC2504 onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1PHASE 400V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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FFLMC74HC4060ADTR2G onsemi Description: IC REG LINEAR
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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RS1AFA RS1AFA onsemi rs1afa-d.pdf Description: DIODE STD 50V 800MA SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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RS1AFA RS1AFA onsemi rs1afa-d.pdf Description: DIODE STD 50V 800MA SOD123FA
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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NTD4815NH-1G NTD4815NH-1G onsemi ntd4815nh-d.pdf Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
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NTD4815NHT4G NTD4815NHT4G onsemi ntd4815nh-d.pdf Description: MOSFET N-CH 30V 6.9A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
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NTD4815NH-35G NTD4815NH-35G onsemi ntd4815nh-d.pdf Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
Produkt ist nicht verfügbar
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MC54HC244AJ MC54HC244AJ onsemi MOTOS03655-1.pdf?t.download=true&u=5oefqw Description: BUS DRIVER, HC/UH SERIES
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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FAN7190MX-F085P FAN7190MX-F085P onsemi Description: IC GATE DRVR HALF-BRIDGE 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FDB035AN06A0-F085 FDB035AN06A0-F085 onsemi fdb035an06_f085-d.pdf Description: MOSFET N-CH 60V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Produkt ist nicht verfügbar
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FDB035AN06A0-F085 FDB035AN06A0-F085 onsemi fdb035an06_f085-d.pdf Description: MOSFET N-CH 60V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Produkt ist nicht verfügbar
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NCV57084DR2G NCV57084DR2G onsemi ncd57084-d.pdf Description: ISOLATED COMPACT IGBT GATE DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
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NCV57084DR2G NCV57084DR2G onsemi ncd57084-d.pdf Description: ISOLATED COMPACT IGBT GATE DRIVE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
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FCPF11N60T FCPF11N60T onsemi fcpf11n60t-d.pdf Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
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MM3Z6V8T1G MM3Z6V8T1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 6.8V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
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FDB0260N1007L FDB0260N1007L onsemi fdb0260n1007l-d.pdf Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
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FDB0260N1007L FDB0260N1007L onsemi fdb0260n1007l-d.pdf Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
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MM74HCT374MTCX MM74HCT374MTCX onsemi mm74hct373-d.pdf Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Part Status: Active
Number of Bits per Element: 8
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MM74HCT374MTCX MM74HCT374MTCX onsemi mm74hct373-d.pdf Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Part Status: Active
Number of Bits per Element: 8
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NCP1345Q02D1R2G NCP1345Q02D1R2G onsemi ncp1345-d.pdf Description: HIGHLY INTEGRATED QUASI-RESONANT
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Produkt ist nicht verfügbar
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NCP1345Q02D1R2G NCP1345Q02D1R2G onsemi ncp1345-d.pdf Description: HIGHLY INTEGRATED QUASI-RESONANT
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
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1N4755A-T50A 1N4755A-T50A onsemi 1N4736AT-D.PDF Description: DIODE ZENER 43V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
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1N4755A-T50A 1N4755A-T50A onsemi 1N4736AT-D.PDF Description: DIODE ZENER 43V 1W DO41
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
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FOD3184 FOD3184 onsemi fod3184-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
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NVMFS2D3P04M8LT1G NVMFS2D3P04M8LT1G onsemi nvmfs2d3p04m8l-d.pdf Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS9D6P04M8LT1G NVMFS9D6P04M8LT1G onsemi nvmfs9d6p04m8l-d.pdf Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS025P04M8LT1G onsemi nvmfs025p04m8l-d.pdf Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
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NVMFS014P04M8LT1G NVMFS014P04M8LT1G onsemi nvmfs014p04m8l-d.pdf Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35605 Stücke:
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NVMFWS014P04M8LT1G NVMFWS014P04M8LT1G onsemi nvmfs014p04m8l-d.pdf Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1222 Stücke:
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12+1.53 EUR
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NTD5862NT4G NTD5862NT4G onsemi ONSM-S-A0000715522-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Produkt ist nicht verfügbar
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FMBS2383 FMBS2383 onsemi fmbs2383-d.pdf Description: TRANS NPN 160V 0.8A SUPERSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 630 mW
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FQD12N20LTM-F085 FQD12N20LTM-F085 onsemi fqd12n20l-d.pdf Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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2500+0.79 EUR
5000+0.74 EUR
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NC7SZ373P6X-L22347 NC7SZ373P6X-L22347 onsemi NC7SZ373-D.PDF Description: IC D-TYPE TRANSP 1:1 SC-70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-70-6
Part Status: Active
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NC7SZ373P6X-L22347 NC7SZ373P6X-L22347 onsemi NC7SZ373-D.PDF Description: IC D-TYPE TRANSP 1:1 SC-70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-70-6
Part Status: Active
Produkt ist nicht verfügbar
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NC7SZ373P6 NC7SZ373P6 onsemi nc7sz373-d.pdf Description: IC D-TYPE TRANSP 1:1 SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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NC7SZ373L6X NC7SZ373L6X onsemi NC7SZ373-D.PDF Description: IC D-TYPE TRANSP 1:1 6-MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Produkt ist nicht verfügbar
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SPC5748CK1MMJ6 onsemi Description: MPC5748G - CALYPSO 6M-32 BIT, 6M
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NVTFS4C06NTAG NVTFS4C06NTAG onsemi nvtfs4c06n-d.pdf Description: MOSFET N-CH 30V 21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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NVTFS4C06NTAG NVTFS4C06NTAG onsemi nvtfs4c06n-d.pdf Description: MOSFET N-CH 30V 21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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SZMMSZ4V7T1G SZMMSZ4V7T1G onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
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SZMMSZ4V7T1G SZMMSZ4V7T1G onsemi mmsz2v4t1-d.pdf Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
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63+0.28 EUR
100+0.18 EUR
140+0.13 EUR
500+0.12 EUR
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LM2901DR2 LM2901DR2 onsemi LM339%2C239%2C2901%28V%29%2CNCV2901%2CMC3302.pdf Description: IC COMP QUAD SGL SUPPLY 14SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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KA431SMF2TF ka431sl-d.pdf
KA431SMF2TF
Hersteller: onsemi
Description: IC VREF SHUNT 36V 2% SOT23F-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOT-23-3 Flat Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-23F-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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21+0.84 EUR
36+0.5 EUR
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NSVMMBTH81LT3G mmbth81-d.pdf
NSVMMBTH81LT3G
Hersteller: onsemi
Description: RF TRANS PNP 20V 600MHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: SOT-23-3
Part Status: Active
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31+0.58 EUR
45+0.39 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
2000+0.19 EUR
5000+0.17 EUR
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P6KE16ARL P6KE6.8A_Series.pdf
P6KE16ARL
Hersteller: onsemi
Description: TVS ZENER UNIDIR 600W 16V AXIAL
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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NVTFS5824NLWFTAG nvtfs5824nl-d.pdf
NVTFS5824NLWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FAM65CR51AXZ2 fam65cr51axz1-d.pdf
Hersteller: onsemi
Description: APM16 SF3 FRFET & SIC DIODE 51MO
Packaging: Tube
Package / Case: 12-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 2 Independent
Part Status: Active
Current: 64 A
Voltage: 650 V
Produkt ist nicht verfügbar
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FAM65HR51XS2 fam65hr51xs1-d.pdf
FAM65HR51XS2
Hersteller: onsemi
Description: APM16 CAA H-BRIDGE SF3 FRFET 51M
Packaging: Tube
Package / Case: 16-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: H-Bridge Inverter
Part Status: Active
Current: 64 A
Voltage: 650 V
Produkt ist nicht verfügbar
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FAM65HR51DS1 fam65hr51ds1-d.pdf
Hersteller: onsemi
Description: FAM65HR51DS1
Packaging: Bulk
Package / Case: 16-SSIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 1 Phase
Part Status: Active
Current: 33 A
Voltage: 650 V
Produkt ist nicht verfügbar
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FAM65CR51AXZ1 fam65cr51axz1-d.pdf
Hersteller: onsemi
Description: APM16 SF3 FRFET & SIC DIODE 51MO
Packaging: Tube
Package / Case: 12-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 2 Independent
Part Status: Active
Current: 64 A
Voltage: 650 V
Produkt ist nicht verfügbar
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FAM65HR51XS1 fam65hr51xs1-d.pdf
FAM65HR51XS1
Hersteller: onsemi
Description: APM16 CAA H-BRIDGE SF3 FRFET 51M
Packaging: Tube
Package / Case: 16-SIP Exposed Pad, Formed Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: H-Bridge Inverter
Part Status: Active
Current: 64 A
Voltage: 650 V
Produkt ist nicht verfügbar
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ENGFAM65CR51AXZ1
Hersteller: onsemi
Description: IC
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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ENGFAM65CR51AXZ2
Hersteller: onsemi
Description: IC
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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NV25160DWHFT3G nv25080-d.pdf
NV25160DWHFT3G
Hersteller: onsemi
Description: IC EEPROM 16KBIT SPI 10MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 27000 Stücke:
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3000+0.56 EUR
6000+0.54 EUR
9000+0.53 EUR
15000+0.52 EUR
21000+0.51 EUR
Mindestbestellmenge: 3000
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NV25640DTHFT3G nv25080-d.pdf
NV25640DTHFT3G
Hersteller: onsemi
Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 8K x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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3000+0.62 EUR
6000+0.61 EUR
9000+0.6 EUR
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NV25640DTHFT3G nv25080-d.pdf
NV25640DTHFT3G
Hersteller: onsemi
Description: IC EEPROM 64KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 8K x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 17148 Stücke:
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23+0.79 EUR
24+0.75 EUR
25+0.73 EUR
50+0.71 EUR
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250+0.68 EUR
500+0.66 EUR
1000+0.65 EUR
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N24S64BC4DYT3G n24s64b-d.pdf
N24S64BC4DYT3G
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.77x0.77)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
Produkt ist nicht verfügbar
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N24S64BC4DYT3G n24s64b-d.pdf
N24S64BC4DYT3G
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.77x0.77)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
auf Bestellung 4185 Stücke:
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39+0.46 EUR
40+0.45 EUR
43+0.42 EUR
50+0.41 EUR
100+0.37 EUR
250+0.36 EUR
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CAT34C02YI-GT5A cat34c02-d.pdf
CAT34C02YI-GT5A
Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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5000+0.3 EUR
10000+0.29 EUR
Mindestbestellmenge: 5000
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CAT34C02YI-GT5A cat34c02-d.pdf
CAT34C02YI-GT5A
Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
auf Bestellung 34566 Stücke:
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30+0.6 EUR
34+0.52 EUR
36+0.5 EUR
50+0.48 EUR
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250+0.44 EUR
500+0.43 EUR
1000+0.41 EUR
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GBPC2504 gbpc3510-d.pdf
GBPC2504
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 400V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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2+10.19 EUR
50+5.43 EUR
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FFLMC74HC4060ADTR2G
Hersteller: onsemi
Description: IC REG LINEAR
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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RS1AFA rs1afa-d.pdf
RS1AFA
Hersteller: onsemi
Description: DIODE STD 50V 800MA SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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RS1AFA rs1afa-d.pdf
RS1AFA
Hersteller: onsemi
Description: DIODE STD 50V 800MA SOD123FA
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4184 Stücke:
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Anzahl Preis
33+0.55 EUR
49+0.36 EUR
100+0.23 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 33
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NTD4815NH-1G ntd4815nh-d.pdf
NTD4815NH-1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
Produkt ist nicht verfügbar
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NTD4815NHT4G ntd4815nh-d.pdf
NTD4815NHT4G
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.9A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
Produkt ist nicht verfügbar
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NTD4815NH-35G ntd4815nh-d.pdf
NTD4815NH-35G
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 12 V
Produkt ist nicht verfügbar
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MC54HC244AJ MOTOS03655-1.pdf?t.download=true&u=5oefqw
MC54HC244AJ
Hersteller: onsemi
Description: BUS DRIVER, HC/UH SERIES
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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FAN7190MX-F085P
FAN7190MX-F085P
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FDB035AN06A0-F085 fdb035an06_f085-d.pdf
FDB035AN06A0-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Produkt ist nicht verfügbar
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FDB035AN06A0-F085 fdb035an06_f085-d.pdf
FDB035AN06A0-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Produkt ist nicht verfügbar
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NCV57084DR2G ncd57084-d.pdf
NCV57084DR2G
Hersteller: onsemi
Description: ISOLATED COMPACT IGBT GATE DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.27 EUR
Mindestbestellmenge: 2500
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NCV57084DR2G ncd57084-d.pdf
NCV57084DR2G
Hersteller: onsemi
Description: ISOLATED COMPACT IGBT GATE DRIVE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.95 EUR
10+4.45 EUR
25+4.2 EUR
100+3.58 EUR
250+3.36 EUR
500+2.94 EUR
1000+2.43 EUR
Mindestbestellmenge: 4
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FCPF11N60T fcpf11n60t-d.pdf
FCPF11N60T
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 1907 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.83 EUR
50+3.51 EUR
100+3.19 EUR
500+2.63 EUR
1000+2.45 EUR
Mindestbestellmenge: 3
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MM3Z6V8T1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
MM3Z6V8T1G
Hersteller: onsemi
Description: DIODE ZENER 6.8V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
auf Bestellung 46072 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
110+0.16 EUR
179+0.099 EUR
500+0.072 EUR
1000+0.063 EUR
Mindestbestellmenge: 67
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FDB0260N1007L fdb0260n1007l-d.pdf
FDB0260N1007L
Hersteller: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+7.62 EUR
Mindestbestellmenge: 800
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FDB0260N1007L fdb0260n1007l-d.pdf
FDB0260N1007L
Hersteller: onsemi
Description: MOSFET N-CH 100V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8545 pF @ 50 V
auf Bestellung 1069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.19 EUR
10+11.19 EUR
100+9.32 EUR
Mindestbestellmenge: 2
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MM74HCT374MTCX mm74hct373-d.pdf
MM74HCT374MTCX
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.5 EUR
5000+0.46 EUR
7500+0.44 EUR
12500+0.42 EUR
17500+0.41 EUR
Mindestbestellmenge: 2500
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MM74HCT374MTCX mm74hct373-d.pdf
MM74HCT374MTCX
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 19320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
14+1.27 EUR
25+1.06 EUR
100+0.82 EUR
250+0.7 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 9
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NCP1345Q02D1R2G ncp1345-d.pdf
NCP1345Q02D1R2G
Hersteller: onsemi
Description: HIGHLY INTEGRATED QUASI-RESONANT
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Produkt ist nicht verfügbar
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NCP1345Q02D1R2G ncp1345-d.pdf
NCP1345Q02D1R2G
Hersteller: onsemi
Description: HIGHLY INTEGRATED QUASI-RESONANT
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
auf Bestellung 2341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
10+2.25 EUR
25+1.9 EUR
100+1.5 EUR
250+1.31 EUR
500+1.19 EUR
1000+1.09 EUR
Mindestbestellmenge: 5
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1N4755A-T50A 1N4736AT-D.PDF
1N4755A-T50A
Hersteller: onsemi
Description: DIODE ZENER 43V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
auf Bestellung 4748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
80+0.22 EUR
149+0.12 EUR
500+0.1 EUR
1000+0.091 EUR
Mindestbestellmenge: 50
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1N4755A-T50A 1N4736AT-D.PDF
1N4755A-T50A
Hersteller: onsemi
Description: DIODE ZENER 43V 1W DO41
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.062 EUR
Mindestbestellmenge: 3000
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FOD3184 fod3184-d.pdf
FOD3184
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 3807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.58 EUR
50+2.78 EUR
100+2.6 EUR
500+2.27 EUR
1000+2.16 EUR
2000+2.07 EUR
Mindestbestellmenge: 4
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NVMFS2D3P04M8LT1G nvmfs2d3p04m8l-d.pdf
NVMFS2D3P04M8LT1G
Hersteller: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+4.64 EUR
100+3.6 EUR
500+3.12 EUR
Mindestbestellmenge: 3
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NVMFS9D6P04M8LT1G nvmfs9d6p04m8l-d.pdf
NVMFS9D6P04M8LT1G
Hersteller: onsemi
Description: MV8 P-CH 40V SO-8FL PORTFOLIO EX
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.88 EUR
3000+0.85 EUR
Mindestbestellmenge: 1500
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NVMFS025P04M8LT1G nvmfs025p04m8l-d.pdf
Hersteller: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
auf Bestellung 1492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
13+1.38 EUR
100+0.96 EUR
500+0.8 EUR
Mindestbestellmenge: 11
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NVMFS014P04M8LT1G nvmfs014p04m8l-d.pdf
NVMFS014P04M8LT1G
Hersteller: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.29 EUR
12+1.52 EUR
100+1.04 EUR
500+0.82 EUR
Mindestbestellmenge: 8
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NVMFWS014P04M8LT1G nvmfs014p04m8l-d.pdf
NVMFWS014P04M8LT1G
Hersteller: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
15+1.25 EUR
100+0.97 EUR
500+0.83 EUR
Mindestbestellmenge: 12
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NTD5862NT4G ONSM-S-A0000715522-1.pdf?t.download=true&u=5oefqw
NTD5862NT4G
Hersteller: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 45A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Produkt ist nicht verfügbar
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FMBS2383 fmbs2383-d.pdf
FMBS2383
Hersteller: onsemi
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 630 mW
auf Bestellung 2755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1285+0.36 EUR
Mindestbestellmenge: 1285
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FQD12N20LTM-F085 fqd12n20l-d.pdf
FQD12N20LTM-F085
Hersteller: onsemi
Description: MOSFET N-CH 200V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.79 EUR
5000+0.74 EUR
Mindestbestellmenge: 2500
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NC7SZ373P6X-L22347 NC7SZ373-D.PDF
NC7SZ373P6X-L22347
Hersteller: onsemi
Description: IC D-TYPE TRANSP 1:1 SC-70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-70-6
Part Status: Active
Produkt ist nicht verfügbar
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NC7SZ373P6X-L22347 NC7SZ373-D.PDF
NC7SZ373P6X-L22347
Hersteller: onsemi
Description: IC D-TYPE TRANSP 1:1 SC-70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-70-6
Part Status: Active
Produkt ist nicht verfügbar
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NC7SZ373P6 nc7sz373-d.pdf
NC7SZ373P6
Hersteller: onsemi
Description: IC D-TYPE TRANSP 1:1 SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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NC7SZ373L6X NC7SZ373-D.PDF
NC7SZ373L6X
Hersteller: onsemi
Description: IC D-TYPE TRANSP 1:1 6-MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Delay Time - Propagation: 2.6ns
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Produkt ist nicht verfügbar
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SPC5748CK1MMJ6
Hersteller: onsemi
Description: MPC5748G - CALYPSO 6M-32 BIT, 6M
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NVTFS4C06NTAG nvtfs4c06n-d.pdf
NVTFS4C06NTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.92 EUR
Mindestbestellmenge: 1500
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NVTFS4C06NTAG nvtfs4c06n-d.pdf
NVTFS4C06NTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
10+1.86 EUR
100+1.32 EUR
500+1.07 EUR
Mindestbestellmenge: 7
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SZMMSZ4V7T1G mmsz2v4t1-d.pdf
SZMMSZ4V7T1G
Hersteller: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.083 EUR
6000+0.081 EUR
Mindestbestellmenge: 3000
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SZMMSZ4V7T1G mmsz2v4t1-d.pdf
SZMMSZ4V7T1G
Hersteller: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
140+0.13 EUR
500+0.12 EUR
Mindestbestellmenge: 63
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LM2901DR2 LM339%2C239%2C2901%28V%29%2CNCV2901%2CMC3302.pdf
LM2901DR2
Hersteller: onsemi
Description: IC COMP QUAD SGL SUPPLY 14SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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