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PJT7838_R1_00001 PJT7838_R1_00001 Panjit International Inc. PJT7838.pdf Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
Mindestbestellmenge: 3000
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PJT7838_R1_00001 PJT7838_R1_00001 Panjit International Inc. PJT7838.pdf Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 7895 Stücke:
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20+0.9 EUR
27+0.67 EUR
100+0.42 EUR
500+0.29 EUR
1000+0.22 EUR
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU_R2_000A1 Panjit International Inc. PJW7N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU_R2_000A1 Panjit International Inc. PJW7N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 1075 Stücke:
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14+1.34 EUR
15+1.18 EUR
100+0.9 EUR
500+0.71 EUR
1000+0.57 EUR
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PJT7800_R1_00001 PJT7800_R1_00001 Panjit International Inc. PJT7800.pdf Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 12000 Stücke:
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3000+0.18 EUR
9000+0.16 EUR
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PJT7800_R1_00001 PJT7800_R1_00001 Panjit International Inc. PJT7800.pdf Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
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PJX8802_R1_00001 PJX8802_R1_00001 Panjit International Inc. PJX8802.pdf Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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PJX8802_R1_00001 PJX8802_R1_00001 Panjit International Inc. PJX8802.pdf Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 2669 Stücke:
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20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
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PJX8806_R1_00001 PJX8806_R1_00001 Panjit International Inc. PJX8806.pdf Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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4000+0.2 EUR
8000+0.18 EUR
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PJX8806_R1_00001 PJX8806_R1_00001 Panjit International Inc. PJX8806.pdf Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 9145 Stücke:
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20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
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PJT7802_R1_00001 PJT7802_R1_00001 Panjit International Inc. PJT7802.pdf Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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PJT7802_R1_00001 PJT7802_R1_00001 Panjit International Inc. PJT7802.pdf Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
31+0.58 EUR
100+0.29 EUR
500+0.26 EUR
1000+0.2 EUR
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PJS6806_S1_00001 PJS6806_S1_00001 Panjit International Inc. PJS6806.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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PJS6806_S1_00001 PJS6806_S1_00001 Panjit International Inc. PJS6806.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 2661 Stücke:
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21+0.84 EUR
28+0.64 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.24 EUR
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PJL9410_R2_00001 Panjit International Inc. Description: 30V N-CHANNEL ENHANCEMENT MODE M
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PJL9410_R2_00001 Panjit International Inc. Description: 30V N-CHANNEL ENHANCEMENT MODE M
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PJS6816_S1_00001 PJS6816_S1_00001 Panjit International Inc. PJS6816.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
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PJS6816_S1_00001 PJS6816_S1_00001 Panjit International Inc. PJS6816.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
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27+0.67 EUR
31+0.58 EUR
100+0.4 EUR
500+0.31 EUR
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PJX138K_R1_00001 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJX138K_R1_00001 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT138K-AU_R1_000A1 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT138K-AU_R1_000A1 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT7812_R1_00001 PJT7812_R1_00001 Panjit International Inc. PJT7812.pdf Description: MOSFET 2N-CH 30V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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PJT7812_R1_00001 PJT7812_R1_00001 Panjit International Inc. PJT7812.pdf Description: MOSFET 2N-CH 30V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BAT721AC_R1_00001 BAT721AC_R1_00001 Panjit International Inc. BAT721AC.pdf Description: DIODE ARR SCHOTT 40V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 400 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Produkt ist nicht verfügbar
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BAT721AC_R1_00001 BAT721AC_R1_00001 Panjit International Inc. BAT721AC.pdf Description: DIODE ARR SCHOTT 40V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 400 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Produkt ist nicht verfügbar
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MBR5100_R2_00001 MBR5100_R2_00001 Panjit International Inc. MBR540_SERIES.pdf Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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MBR5100_R2_00001 MBR5100_R2_00001 Panjit International Inc. MBR540_SERIES.pdf Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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SK55_R1_00001 SK55_R1_00001 Panjit International Inc. SK52_SERIES.pdf Description: SURFACE MOUNT SCHOTTKY BARRIER R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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SK55_R1_00001 SK55_R1_00001 Panjit International Inc. SK52_SERIES.pdf Description: SURFACE MOUNT SCHOTTKY BARRIER R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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BZX84C8V2W-AU_R1_000A1 BZX84C8V2W-AU_R1_000A1 Panjit International Inc. BZX84C2V4W-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C8V2W-AU_R1_000A1 BZX84C8V2W-AU_R1_000A1 Panjit International Inc. BZX84C2V4W-AU_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84C8V2TW_R1_00001 BZX84C8V2TW_R1_00001 Panjit International Inc. BZX84C2V4TW_SERIES.pdf Description: TRIPLE ISOLATED SURFACE MOUNT ZE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2TW_R1_00001 BZX84C8V2TW_R1_00001 Panjit International Inc. BZX84C2V4TW_SERIES.pdf Description: TRIPLE ISOLATED SURFACE MOUNT ZE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
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BZX84C8V2W_R1_00001 BZX84C8V2W_R1_00001 Panjit International Inc. BZX84C2V4W_SERIES.pdf Description: DIODE ZENER 8.2V 200MW SOT323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2W_R1_00001 BZX84C8V2W_R1_00001 Panjit International Inc. BZX84C2V4W_SERIES.pdf Description: DIODE ZENER 8.2V 200MW SOT323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
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BZX84C8V2_R1_00001 BZX84C8V2_R1_00001 Panjit International Inc. BZX84B2V4_SERIES.pdf Description: DIODE ZENER 8.2V 410MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.029 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2_R1_00001 BZX84C8V2_R1_00001 Panjit International Inc. BZX84B2V4_SERIES.pdf Description: DIODE ZENER 8.2V 410MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
Mindestbestellmenge: 67
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BZX84C8V2-AU_R1_000A1 BZX84C8V2-AU_R1_000A1 Panjit International Inc. BZX84C2V4-AU_SERIES.pdf Description: DIODE ZENER 8.2V 410MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.058 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2-AU_R1_000A1 BZX84C8V2-AU_R1_000A1 Panjit International Inc. BZX84C2V4-AU_SERIES.pdf Description: DIODE ZENER 8.2V 410MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
100+0.18 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 59
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P4SMAJ30C_R1_00001 P4SMAJ30C_R1_00001 Panjit International Inc. Description: SURFACE MOUNT TRANSIENT VOLTAGE
Produkt ist nicht verfügbar
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P4SMAJ30C_R1_00001 P4SMAJ30C_R1_00001 Panjit International Inc. Description: SURFACE MOUNT TRANSIENT VOLTAGE
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P4SMAJ30_R1_00001 P4SMAJ30_R1_00001 Panjit International Inc. P4SMAJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.16 EUR
Mindestbestellmenge: 1800
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P4SMAJ30_R1_00001 P4SMAJ30_R1_00001 Panjit International Inc. P4SMAJ_SERIES.pdf Description: SURFACE MOUNT TRANSIENT VOLTAGE
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
36+0.5 EUR
100+0.31 EUR
500+0.21 EUR
Mindestbestellmenge: 27
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PJD16N06A-AU_L2_000A1 PJD16N06A-AU_L2_000A1 Panjit International Inc. PJD16N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJD16N06A-AU_L2_000A1 PJD16N06A-AU_L2_000A1 Panjit International Inc. PJD16N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJD16N06A_L2_00001 PJD16N06A_L2_00001 Panjit International Inc. PJD16N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Produkt ist nicht verfügbar
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PJD16N06A_L2_00001 PJD16N06A_L2_00001 Panjit International Inc. PJD16N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Produkt ist nicht verfügbar
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US1K_R1_00001 US1K_R1_00001 Panjit International Inc. US1A_SERIES.pdf Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.11 EUR
3600+0.1 EUR
5400+0.095 EUR
Mindestbestellmenge: 1800
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US1K_R1_00001 US1K_R1_00001 Panjit International Inc. US1A_SERIES.pdf Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6210 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
58+0.3 EUR
100+0.19 EUR
500+0.14 EUR
Mindestbestellmenge: 35
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US1KAFC_R1_00001 US1KAFC_R1_00001 Panjit International Inc. US1AAFC_SERIES.pdf Description: DIODE STANDARD 800V 1A SMAFC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
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US1KAFC_R1_00001 US1KAFC_R1_00001 Panjit International Inc. US1AAFC_SERIES.pdf Description: DIODE STANDARD 800V 1A SMAFC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
SK26_R1_00001 SK26_R1_00001 Panjit International Inc. SK22_SERIES.pdf Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+0.13 EUR
Mindestbestellmenge: 800
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SK26_R1_00001 SK26_R1_00001 Panjit International Inc. SK22_SERIES.pdf Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
auf Bestellung 861 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
55+0.33 EUR
100+0.23 EUR
Mindestbestellmenge: 36
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SK26F_R2_00001 SK26F_R2_00001 Panjit International Inc. SK22F_SERIES.pdf Description: DIODE SCHOTTKY 60V 2A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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SK26F_R2_00001 SK26F_R2_00001 Panjit International Inc. SK22F_SERIES.pdf Description: DIODE SCHOTTKY 60V 2A SMBF
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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SK26L_R1_00001 SK26L_R1_00001 Panjit International Inc. SK22_SERIES.pdf Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SK26L_R1_00001 SK26L_R1_00001 Panjit International Inc. SK22_SERIES.pdf Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
44+0.41 EUR
100+0.26 EUR
Mindestbestellmenge: 28
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BD880CS_L2_00001 BD880CS_L2_00001 Panjit International Inc. BD840CS_SERIES.pdf Description: DIODE ARRAY SCHOTT 80V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Produkt ist nicht verfügbar
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BD880CS_L2_00001 BD880CS_L2_00001 Panjit International Inc. BD840CS_SERIES.pdf Description: DIODE ARRAY SCHOTT 80V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Produkt ist nicht verfügbar
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PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 7895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
27+0.67 EUR
100+0.42 EUR
500+0.29 EUR
1000+0.22 EUR
Mindestbestellmenge: 20
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU.pdf
PJW7N06A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU.pdf
PJW7N06A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 1075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
15+1.18 EUR
100+0.9 EUR
500+0.71 EUR
1000+0.57 EUR
Mindestbestellmenge: 14
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PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 16525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
31+0.58 EUR
100+0.29 EUR
500+0.26 EUR
1000+0.2 EUR
Mindestbestellmenge: 22
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PJX8802_R1_00001 PJX8802.pdf
PJX8802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8802_R1_00001 PJX8802.pdf
PJX8802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 2669 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
PJX8806_R1_00001 PJX8806.pdf
PJX8806_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.2 EUR
8000+0.18 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
PJX8806_R1_00001 PJX8806.pdf
PJX8806_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 9145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
PJT7802_R1_00001 PJT7802.pdf
PJT7802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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PJT7802_R1_00001 PJT7802.pdf
PJT7802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
31+0.58 EUR
100+0.29 EUR
500+0.26 EUR
1000+0.2 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PJS6806_S1_00001 PJS6806.pdf
PJS6806_S1_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJS6806_S1_00001 PJS6806.pdf
PJS6806_S1_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 2661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
28+0.64 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.24 EUR
Mindestbestellmenge: 21
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PJL9410_R2_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJL9410_R2_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJS6816_S1_00001 PJS6816.pdf
PJS6816_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJS6816_S1_00001 PJS6816.pdf
PJS6816_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
auf Bestellung 4494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
31+0.58 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27
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PJX138K_R1_00001
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7812_R1_00001 PJT7812.pdf
PJT7812_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7812_R1_00001 PJT7812.pdf
PJT7812_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BAT721AC_R1_00001 BAT721AC.pdf
BAT721AC_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ARR SCHOTT 40V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 400 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Produkt ist nicht verfügbar
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BAT721AC_R1_00001 BAT721AC.pdf
BAT721AC_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ARR SCHOTT 40V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 400 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Produkt ist nicht verfügbar
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MBR5100_R2_00001 MBR540_SERIES.pdf
MBR5100_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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MBR5100_R2_00001 MBR540_SERIES.pdf
MBR5100_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
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SK55_R1_00001 SK52_SERIES.pdf
SK55_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY BARRIER R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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SK55_R1_00001 SK52_SERIES.pdf
SK55_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY BARRIER R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2W-AU_R1_000A1 BZX84C2V4W-AU_SERIES.pdf
BZX84C8V2W-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2W-AU_R1_000A1 BZX84C2V4W-AU_SERIES.pdf
BZX84C8V2W-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2TW_R1_00001 BZX84C2V4TW_SERIES.pdf
BZX84C8V2TW_R1_00001
Hersteller: Panjit International Inc.
Description: TRIPLE ISOLATED SURFACE MOUNT ZE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2TW_R1_00001 BZX84C2V4TW_SERIES.pdf
BZX84C8V2TW_R1_00001
Hersteller: Panjit International Inc.
Description: TRIPLE ISOLATED SURFACE MOUNT ZE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2W_R1_00001 BZX84C2V4W_SERIES.pdf
BZX84C8V2W_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ZENER 8.2V 200MW SOT323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2W_R1_00001 BZX84C2V4W_SERIES.pdf
BZX84C8V2W_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ZENER 8.2V 200MW SOT323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2_R1_00001 BZX84B2V4_SERIES.pdf
BZX84C8V2_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ZENER 8.2V 410MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.029 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2_R1_00001 BZX84B2V4_SERIES.pdf
BZX84C8V2_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE ZENER 8.2V 410MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2-AU_R1_000A1 BZX84C2V4-AU_SERIES.pdf
BZX84C8V2-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: DIODE ZENER 8.2V 410MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.058 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C8V2-AU_R1_000A1 BZX84C2V4-AU_SERIES.pdf
BZX84C8V2-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: DIODE ZENER 8.2V 410MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
100+0.18 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
P4SMAJ30C_R1_00001
P4SMAJ30C_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4SMAJ30C_R1_00001
P4SMAJ30C_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P4SMAJ30_R1_00001 P4SMAJ_SERIES.pdf
P4SMAJ30_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.16 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
P4SMAJ30_R1_00001 P4SMAJ_SERIES.pdf
P4SMAJ30_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
36+0.5 EUR
100+0.31 EUR
500+0.21 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
PJD16N06A-AU_L2_000A1 PJD16N06A-AU.pdf
PJD16N06A-AU_L2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD16N06A-AU_L2_000A1 PJD16N06A-AU.pdf
PJD16N06A-AU_L2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 32.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD16N06A_L2_00001 PJD16N06A.pdf
PJD16N06A_L2_00001
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD16N06A_L2_00001 PJD16N06A.pdf
PJD16N06A_L2_00001
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
US1K_R1_00001 US1A_SERIES.pdf
US1K_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.11 EUR
3600+0.1 EUR
5400+0.095 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
US1K_R1_00001 US1A_SERIES.pdf
US1K_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
58+0.3 EUR
100+0.19 EUR
500+0.14 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
US1KAFC_R1_00001 US1AAFC_SERIES.pdf
US1KAFC_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 800V 1A SMAFC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
US1KAFC_R1_00001 US1AAFC_SERIES.pdf
US1KAFC_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 800V 1A SMAFC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
SK26_R1_00001 SK22_SERIES.pdf
SK26_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.13 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
SK26_R1_00001 SK22_SERIES.pdf
SK26_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 90 µA @ 60 V
auf Bestellung 861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
55+0.33 EUR
100+0.23 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
SK26F_R2_00001 SK22F_SERIES.pdf
SK26F_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 60V 2A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SK26F_R2_00001 SK22F_SERIES.pdf
SK26F_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 60V 2A SMBF
Packaging: Cut Tape (CT)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SK26L_R1_00001 SK22_SERIES.pdf
SK26L_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SK26L_R1_00001 SK22_SERIES.pdf
SK26L_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
44+0.41 EUR
100+0.26 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BD880CS_L2_00001 BD840CS_SERIES.pdf
BD880CS_L2_00001
Hersteller: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 80V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD880CS_L2_00001 BD840CS_SERIES.pdf
BD880CS_L2_00001
Hersteller: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 80V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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