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SR24_R1_00001 SR24_R1_00001 Panjit International Inc. SR22_SERIES.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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48+0.37 EUR
69+0.26 EUR
100+0.19 EUR
500+0.15 EUR
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BZT52-B4V7_R1_00001 BZT52-B4V7_R1_00001 Panjit International Inc. BZT52-B2V4_SERIES.pdf Description: SOD-123, ZENER
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 78 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.91%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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3000+0.067 EUR
6000+0.06 EUR
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BZT52-B4V7_R1_00001 BZT52-B4V7_R1_00001 Panjit International Inc. BZT52-B2V4_SERIES.pdf Description: SOD-123, ZENER
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 78 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.91%
Packaging: Cut Tape (CT)
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48+0.37 EUR
52+0.34 EUR
100+0.19 EUR
500+0.11 EUR
1000+0.078 EUR
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SM8S36A-AU_R2_000A1 SM8S36A-AU_R2_000A1 Panjit International Inc. SM8S14A-AU_SERIES.pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 114A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
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SM8S36A-AU_R2_000A1 SM8S36A-AU_R2_000A1 Panjit International Inc. SM8S14A-AU_SERIES.pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 114A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Cut Tape (CT)
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10+4.08 EUR
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PEC1305S1Q_R1_00001 PEC1305S1Q_R1_00001 Panjit International Inc. PEC1305S1Q.pdf Description: ULTRA LOW CAPACITANCE ESD PROTEC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: DFN0603-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.25pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
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PEC1305S1Q_R1_00001 PEC1305S1Q_R1_00001 Panjit International Inc. PEC1305S1Q.pdf Description: ULTRA LOW CAPACITANCE ESD PROTEC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: DFN0603-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.25pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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P6SMB200AS_R1_00001 P6SMB200AS_R1_00001 Panjit International Inc. P6SMB10AS_SERIES.pdf Description: TVS DIODE 171VWM 274VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
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800+0.25 EUR
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P6SMB200AS_R1_00001 P6SMB200AS_R1_00001 Panjit International Inc. P6SMB10AS_SERIES.pdf Description: TVS DIODE 171VWM 274VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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ES1A_R1_00001 ES1A_R1_00001 Panjit International Inc. ES1A_SERIES.pdf Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
auf Bestellung 1577 Stücke:
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39+0.46 EUR
63+0.28 EUR
101+0.17 EUR
500+0.13 EUR
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PBHV9110DA-AU_R1_000A1 PBHV9110DA-AU_R1_000A1 Panjit International Inc. PBHV9110DA.pdf Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
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PBHV9110DA-AU_R1_000A1 PBHV9110DA-AU_R1_000A1 Panjit International Inc. PBHV9110DA.pdf Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1192 Stücke:
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46+0.39 EUR
74+0.24 EUR
119+0.15 EUR
500+0.11 EUR
1000+0.096 EUR
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2SD1781A_R1_00001 2SD1781A_R1_00001 Panjit International Inc. 2SD1781A.pdf Description: TRANS NPN 50V 3A SOT-23
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
15000+0.12 EUR
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2SD1781A_R1_00001 2SD1781A_R1_00001 Panjit International Inc. 2SD1781A.pdf Description: TRANS NPN 50V 3A SOT-23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
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42+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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PJL9480_R2_00001 PJL9480_R2_00001 Panjit International Inc. PJL9480.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
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PJL9480_R2_00001 PJL9480_R2_00001 Panjit International Inc. PJL9480.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
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14+1.33 EUR
100+0.93 EUR
500+0.75 EUR
1000+0.69 EUR
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PJQ5494_R2_00001 Panjit International Inc. Description: 150V N-CHANNEL ENHANCEMENT MODE
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PJQ5494_R2_00001 Panjit International Inc. Description: 150V N-CHANNEL ENHANCEMENT MODE
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PJD30N15_L2_00001 PJD30N15_L2_00001 Panjit International Inc. PJD30N15.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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PJD30N15_L2_00001 PJD30N15_L2_00001 Panjit International Inc. PJD30N15.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
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13+1.4 EUR
100+0.98 EUR
500+0.79 EUR
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PJD40N15_L2_00001 PJD40N15_L2_00001 Panjit International Inc. PJD40N15.pdf Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V
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PJQ2800_R1_00001 Panjit International Inc. Description: 20V N-CHANNEL ENHANCEMENT MODE M
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PJQ2800_R1_00001 Panjit International Inc. Description: 20V N-CHANNEL ENHANCEMENT MODE M
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PJX138K-AU_R1_000A1 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJX138K-AU_R1_000A1 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT7802_S1_00001 PJT7802_S1_00001 Panjit International Inc. PJT7802.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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PJT7802_S1_00001 PJT7802_S1_00001 Panjit International Inc. PJT7802.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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PJX8808_R1_00001 PJX8808_R1_00001 Panjit International Inc. PJX8808.pdf Description: MOSFET 2N-CH 20V 0.5A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
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PJX8808_R1_00001 PJX8808_R1_00001 Panjit International Inc. PJX8808.pdf Description: MOSFET 2N-CH 20V 0.5A SOT563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563
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20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
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PJW7N04-AU_R2_000A1 Panjit International Inc. Description: 40V N-CHANNEL ENHANCEMENT MODE M
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PJW7N04-AU_R2_000A1 Panjit International Inc. Description: 40V N-CHANNEL ENHANCEMENT MODE M
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PJT138K_R1_00001 PJT138K_R1_00001 Panjit International Inc. PJT138K.pdf Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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PJT138K_R1_00001 PJT138K_R1_00001 Panjit International Inc. PJT138K.pdf Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 9484 Stücke:
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102+0.17 EUR
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PJA3416-AU_R1_000A1 PJA3416-AU_R1_000A1 Panjit International Inc. PJA3416-AU.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJA3416-AU_R1_000A1 PJA3416-AU_R1_000A1 Panjit International Inc. PJA3416-AU.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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PJS6834_S2_00001 PJS6834_S2_00001 Panjit International Inc. PJS6834.pdf Description: MOSFET 2N-CH 20V 0.75A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJT7838_R1_00001 PJT7838_R1_00001 Panjit International Inc. PJT7838.pdf Description: 50V N-CHANNEL ENHANCEMENT MODE M
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
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PJT7838_R1_00001 PJT7838_R1_00001 Panjit International Inc. PJT7838.pdf Description: 50V N-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
auf Bestellung 7895 Stücke:
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU_R2_000A1 Panjit International Inc. PJW7N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU_R2_000A1 Panjit International Inc. PJW7N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJT7800_R1_00001 PJT7800_R1_00001 Panjit International Inc. PJT7800.pdf Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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3000+0.18 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000 Stücke
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PJT7800_R1_00001 PJT7800_R1_00001 Panjit International Inc. PJT7800.pdf Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 16525 Stücke:
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22+0.81 EUR
31+0.58 EUR
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500+0.26 EUR
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PJX8802_R1_00001 PJX8802_R1_00001 Panjit International Inc. PJX8802.pdf Description: MOSFET 2N-CH 20V 0.7A SOT563
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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PJX8802_R1_00001 PJX8802_R1_00001 Panjit International Inc. PJX8802.pdf Description: MOSFET 2N-CH 20V 0.7A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 2669 Stücke:
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20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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PJX8806_R1_00001 PJX8806_R1_00001 Panjit International Inc. PJX8806.pdf Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
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4000+0.2 EUR
8000+0.18 EUR
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PJX8806_R1_00001 PJX8806_R1_00001 Panjit International Inc. PJX8806.pdf Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 9145 Stücke:
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20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
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PJT7802_R1_00001 PJT7802_R1_00001 Panjit International Inc. PJT7802.pdf Description: MOSFET 2N-CH 20V 0.5A SOT363
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJT7802_R1_00001 PJT7802_R1_00001 Panjit International Inc. PJT7802.pdf Description: MOSFET 2N-CH 20V 0.5A SOT363
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2700 Stücke:
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22+0.81 EUR
31+0.58 EUR
100+0.29 EUR
500+0.26 EUR
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PJS6806_S1_00001 PJS6806_S1_00001 Panjit International Inc. PJS6806.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJS6806_S1_00001 PJS6806_S1_00001 Panjit International Inc. PJS6806.pdf Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2661 Stücke:
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21+0.84 EUR
28+0.64 EUR
100+0.39 EUR
500+0.36 EUR
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PJL9410_R2_00001 Panjit International Inc. Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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PJL9410_R2_00001 Panjit International Inc. Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJS6816_S1_00001 PJS6816_S1_00001 Panjit International Inc. PJS6816.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJS6816_S1_00001 PJS6816_S1_00001 Panjit International Inc. PJS6816.pdf Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 4494 Stücke:
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27+0.67 EUR
31+0.58 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.25 EUR
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PJX138K_R1_00001 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJX138K_R1_00001 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT138K-AU_R1_000A1 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT138K-AU_R1_000A1 Panjit International Inc. Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJT7812_R1_00001 PJT7812_R1_00001 Panjit International Inc. PJT7812.pdf Description: MOSFET 2N-CH 30V 0.5A SOT363
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJT7812_R1_00001 PJT7812_R1_00001 Panjit International Inc. PJT7812.pdf Description: MOSFET 2N-CH 30V 0.5A SOT363
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
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SR24_R1_00001 SR22_SERIES.pdf
SR24_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 2A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 7030 Stücke:
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48+0.37 EUR
69+0.26 EUR
100+0.19 EUR
500+0.15 EUR
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BZT52-B4V7_R1_00001 BZT52-B2V4_SERIES.pdf
BZT52-B4V7_R1_00001
Hersteller: Panjit International Inc.
Description: SOD-123, ZENER
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 78 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.91%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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3000+0.067 EUR
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BZT52-B4V7_R1_00001 BZT52-B2V4_SERIES.pdf
BZT52-B4V7_R1_00001
Hersteller: Panjit International Inc.
Description: SOD-123, ZENER
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 78 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.91%
Packaging: Cut Tape (CT)
auf Bestellung 8606 Stücke:
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48+0.37 EUR
52+0.34 EUR
100+0.19 EUR
500+0.11 EUR
1000+0.078 EUR
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SM8S36A-AU_R2_000A1 SM8S14A-AU_SERIES.pdf
SM8S36A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: TVS DIODE 36VWM 58.1VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 114A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SM8S36A-AU_R2_000A1 SM8S14A-AU_SERIES.pdf
SM8S36A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: TVS DIODE 36VWM 58.1VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 114A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Cut Tape (CT)
auf Bestellung 320 Stücke:
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3+6.21 EUR
10+4.08 EUR
100+2.88 EUR
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PEC1305S1Q_R1_00001 PEC1305S1Q.pdf
PEC1305S1Q_R1_00001
Hersteller: Panjit International Inc.
Description: ULTRA LOW CAPACITANCE ESD PROTEC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: DFN0603-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.25pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PEC1305S1Q_R1_00001 PEC1305S1Q.pdf
PEC1305S1Q_R1_00001
Hersteller: Panjit International Inc.
Description: ULTRA LOW CAPACITANCE ESD PROTEC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: DFN0603-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.25pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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P6SMB200AS_R1_00001 P6SMB10AS_SERIES.pdf
P6SMB200AS_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 171VWM 274VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+0.25 EUR
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P6SMB200AS_R1_00001 P6SMB10AS_SERIES.pdf
P6SMB200AS_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 171VWM 274VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke:
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AnzahlPreis
19+0.93 EUR
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ES1A_R1_00001 ES1A_SERIES.pdf
ES1A_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
auf Bestellung 1577 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
39+0.46 EUR
63+0.28 EUR
101+0.17 EUR
500+0.13 EUR
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PBHV9110DA-AU_R1_000A1 PBHV9110DA.pdf
PBHV9110DA-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PBHV9110DA-AU_R1_000A1 PBHV9110DA.pdf
PBHV9110DA-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1192 Stücke:
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AnzahlPreis
46+0.39 EUR
74+0.24 EUR
119+0.15 EUR
500+0.11 EUR
1000+0.096 EUR
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2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Hersteller: Panjit International Inc.
Description: TRANS NPN 50V 3A SOT-23
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
15000+0.12 EUR
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2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Hersteller: Panjit International Inc.
Description: TRANS NPN 50V 3A SOT-23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
auf Bestellung 26091 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
25+0.7 EUR
42+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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PJL9480_R2_00001 PJL9480.pdf
PJL9480_R2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Produkt ist nicht verfügbar
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PJL9480_R2_00001 PJL9480.pdf
PJL9480_R2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+1.97 EUR
14+1.33 EUR
100+0.93 EUR
500+0.75 EUR
1000+0.69 EUR
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PJQ5494_R2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
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PJQ5494_R2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
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PJD30N15_L2_00001 PJD30N15.pdf
PJD30N15_L2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJD30N15_L2_00001 PJD30N15.pdf
PJD30N15_L2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
auf Bestellung 2966 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.08 EUR
13+1.4 EUR
100+0.98 EUR
500+0.79 EUR
1000+0.72 EUR
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PJD40N15_L2_00001 PJD40N15.pdf
PJD40N15_L2_00001
Hersteller: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V
Produkt ist nicht verfügbar
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PJQ2800_R1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJQ2800_R1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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PJX138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7802_S1_00001 PJT7802.pdf
PJT7802_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJT7802_S1_00001 PJT7802.pdf
PJT7802_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PJX8808_R1_00001 PJX8808.pdf
PJX8808_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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PJX8808_R1_00001 PJX8808.pdf
PJX8808_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563
auf Bestellung 3384 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 20 Stücke
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PJW7N04-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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PJW7N04-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K_R1_00001 PJT138K.pdf
PJT138K_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.058 EUR
Mindestbestellmenge: 3000 Stücke
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PJT138K_R1_00001 PJT138K.pdf
PJT138K_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 9484 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
102+0.17 EUR
196+0.09 EUR
Mindestbestellmenge: 72 Stücke
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PJA3416-AU_R1_000A1 PJA3416-AU.pdf
PJA3416-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJA3416-AU_R1_000A1 PJA3416-AU.pdf
PJA3416-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+0.79 EUR
32+0.56 EUR
100+0.28 EUR
500+0.23 EUR
1000+0.17 EUR
Mindestbestellmenge: 23 Stücke
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PJS6834_S2_00001 PJS6834.pdf
PJS6834_S2_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.75A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
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PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
auf Bestellung 7895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
27+0.67 EUR
100+0.42 EUR
500+0.29 EUR
1000+0.22 EUR
Mindestbestellmenge: 20 Stücke
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PJW7N06A-AU_R2_000A1 PJW7N06A-AU.pdf
PJW7N06A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A-AU_R2_000A1 PJW7N06A-AU.pdf
PJW7N06A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.18 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000 Stücke
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PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 16525 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
22+0.81 EUR
31+0.58 EUR
100+0.29 EUR
500+0.26 EUR
1000+0.2 EUR
Mindestbestellmenge: 22 Stücke
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PJX8802_R1_00001 PJX8802.pdf
PJX8802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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PJX8802_R1_00001 PJX8802.pdf
PJX8802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 2669 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 20 Stücke
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PJX8806_R1_00001 PJX8806.pdf
PJX8806_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.2 EUR
8000+0.18 EUR
Mindestbestellmenge: 4000 Stücke
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PJX8806_R1_00001 PJX8806.pdf
PJX8806_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 9145 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 20 Stücke
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PJT7802_R1_00001 PJT7802.pdf
PJT7802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT363
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar
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PJT7802_R1_00001 PJT7802.pdf
PJT7802_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT363
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
22+0.81 EUR
31+0.58 EUR
100+0.29 EUR
500+0.26 EUR
1000+0.2 EUR
Mindestbestellmenge: 22 Stücke
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PJS6806_S1_00001 PJS6806.pdf
PJS6806_S1_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJS6806_S1_00001 PJS6806.pdf
PJS6806_S1_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2661 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
21+0.84 EUR
28+0.64 EUR
100+0.39 EUR
500+0.36 EUR
1000+0.24 EUR
Mindestbestellmenge: 21 Stücke
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PJL9410_R2_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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PJL9410_R2_00001
Hersteller: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJS6816_S1_00001 PJS6816.pdf
PJS6816_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJS6816_S1_00001 PJS6816.pdf
PJS6816_S1_00001
Hersteller: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 4494 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
27+0.67 EUR
31+0.58 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.25 EUR
Mindestbestellmenge: 27 Stücke
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PJX138K_R1_00001
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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PJX138K_R1_00001
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJT138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJT7812_R1_00001 PJT7812.pdf
PJT7812_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.5A SOT363
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7812_R1_00001 PJT7812.pdf
PJT7812_R1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.5A SOT363
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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