Technische Details DS1230W-100IND+ Analog Devices, Inc.
Description: IC NVSRAM 256KBIT PAR 28EDIP, Access Time: 100 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 100ns, Part Status: Active, Supplier Device Package: 28-EDIP, Memory Format: NVSRAM, Technology: NVSRAM (Non-Volatile SRAM), Voltage - Supply: 3V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 256Kbit, Mounting Type: Through Hole, Package / Case: 28-DIP Module (0.600", 15.24mm), Packaging: Tube, DigiKey Programmable: Not Verified, Memory Organization: 32K x 8.
Weitere Produktangebote DS1230W-100IND+ nach Preis ab 51.1 EUR bis 94.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DS1230W-100IND+ | Analog Devices, Inc. |
 NVRAM NVSRAM Parallel 256Kbit 3.3V 28-Pin EDIP Tube |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
DS1230W-100IND+ | Analog Devices Inc./Maxim Integrated |
Description: IC NVSRAM 256KBIT PAR 28EDIP Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 100ns Part Status: Active Supplier Device Package: 28-EDIP Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 256Kbit Mounting Type: Through Hole Package / Case: 28-DIP Module (0.600", 15.24mm) Packaging: Tube DigiKey Programmable: Not Verified Memory Organization: 32K x 8 |
auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
DS1230W-100IND+ | Analog Devices / Maxim Integrated |
NVRAM 3.3V 256k Nonvolatile SRAM |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| DS1230W-100IND | DALLAS |
09+ SOP |
auf Bestellung 770 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DS1230W-100IND+ |
|
Hersteller: Analog Devices, Inc.
NVRAM NVSRAM Parallel 256Kbit 3.3V 28-Pin EDIP Tube
NVRAM NVSRAM Parallel 256Kbit 3.3V 28-Pin EDIP Tube
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 51.1 EUR |
| DS1230W-100IND+ |
|
Hersteller: Analog Devices Inc./Maxim Integrated
Description: IC NVSRAM 256KBIT PAR 28EDIP
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 100ns
Part Status: Active
Supplier Device Package: 28-EDIP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Description: IC NVSRAM 256KBIT PAR 28EDIP
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 100ns
Part Status: Active
Supplier Device Package: 28-EDIP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 59.02 EUR |
| DS1230W-100IND+ |
|
Hersteller: Analog Devices / Maxim Integrated
NVRAM 3.3V 256k Nonvolatile SRAM
NVRAM 3.3V 256k Nonvolatile SRAM
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 94.6 EUR |
| 12+ | 67.57 EUR |
| 24+ | 67.54 EUR |
| DS1230W-100IND |
|
Hersteller: DALLAS
09+ SOP
09+ SOP
auf Bestellung 770 Stücke:
Lieferzeit 21-28 Tag (e)