FQA9N90
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auf Bestellung 5620 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details FQA9N90
Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 240W (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Bulk.
Weitere Produktangebote FQA9N90
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FQA9N90 | Hersteller : Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
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FQA9N90 | Hersteller : onsemi / Fairchild |
MOSFET 900V N-Channel QFET |
Produkt ist nicht verfügbar |