Produkte > FQA

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
FQA-020-ADC-007-MTDK-LambdaPower Line Filter EMC 50Hz 20A 40VDC PC Pins Flange Mount/Through Hole
Produkt ist nicht verfügbar
FQA-020-ADC-007-STDK-LambdaPower Line Filter EMC 50Hz 20A 40VDC PC Pins Flange Mount/Through Hole
Produkt ist nicht verfügbar
FQA-020-ADC-N07-STDK-LambdaPower Line Filter EMC 50Hz 20A 40VDC PC Pins Thru-Hole
Produkt ist nicht verfügbar
FQA020ADC-007-MTDK-LambdaPower Line Filters 40VDC 20A PCB Mount Flanged M screening
auf Bestellung 15 Stücke:
Lieferzeit 14-28 Tag (e)
1+566.15 EUR
10+ 556.24 EUR
30+ 501.31 EUR
60+ 492.02 EUR
105+ 447.3 EUR
255+ 438.36 EUR
510+ 427.31 EUR
FQA020ADC-007-MTDK-LambdaDescription: LINE FILTER 40VDC 20A TH
Packaging: Tray
Filter Type: DC
Mounting Type: Through Hole
Configuration: Single Stage
Operating Temperature: -55°C ~ 115°C
Termination Style: PC Pins
Applications: General Purpose
Voltage - Rated DC: 40V
Current: 20 A
Produkt ist nicht verfügbar
FQA020ADC-007-STDK-LambdaPower Line Filters 40VDC 20A PCB Mount Flanged
auf Bestellung 54 Stücke:
Lieferzeit 14-28 Tag (e)
1+373.33 EUR
10+ 350.27 EUR
30+ 339.38 EUR
60+ 339.27 EUR
105+ 331.01 EUR
255+ 330.82 EUR
510+ 330.77 EUR
FQA020ADC-007-STDK-LambdaDescription: LINE FILTER 40VDC 20A TH
Packaging: Tray
Filter Type: DC
Mounting Type: Through Hole
Configuration: Single Stage
Operating Temperature: -40°C ~ 115°C
Termination Style: PC Pins
Applications: General Purpose
Voltage - Rated DC: 40V
Current: 20 A
auf Bestellung 348 Stücke:
Lieferzeit 21-28 Tag (e)
1+393.46 EUR
10+ 386.61 EUR
25+ 373.3 EUR
50+ 354.62 EUR
FQA020ADC-N07-MTDK-Lambda Americas IncDescription: FILTER 40VDC 20A PCB MOUNT
Produkt ist nicht verfügbar
FQA020ADC-N07-MTDK-LambdaPower Line Filters 40VDC
auf Bestellung 8 Stücke:
Lieferzeit 14-28 Tag (e)
1+566.15 EUR
10+ 556.24 EUR
30+ 501.31 EUR
60+ 492.02 EUR
105+ 447.3 EUR
255+ 438.36 EUR
510+ 427.31 EUR
FQA020ADC-N07-STDK-LambdaPower Line Filter EMC 50Hz 20A 40VDC PC Pins Thru-Hole
Produkt ist nicht verfügbar
FQA020ADC-N07-STDK-LambdaPower Line Filters 40VDC 20A PCB Mount Non-Flanged
auf Bestellung 13 Stücke:
Lieferzeit 14-28 Tag (e)
1+396.24 EUR
10+ 389.35 EUR
30+ 375.96 EUR
60+ 357.14 EUR
105+ 324.69 EUR
255+ 318.19 EUR
510+ 301.96 EUR
FQA020ADC-N07-STDK-LambdaDescription: LINE FILTER 40VDC 20A TH
Packaging: Tray
Filter Type: DC
Mounting Type: Through Hole
Configuration: Single Stage
Operating Temperature: -40°C ~ 115°C
Termination Style: PC Pins
Applications: General Purpose
Voltage - Rated DC: 40V
Current: 20 A
Produkt ist nicht verfügbar
FQA020ADC-N07-STDK-LambdaPower Line Filter EMC 50Hz 20A 40VDC PC Pins Thru-Hole
Produkt ist nicht verfügbar
FQA10N60CFairchild SemiconductorDescription: MOSFET N-CH 600V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
auf Bestellung 46727 Stücke:
Lieferzeit 21-28 Tag (e)
141+5.11 EUR
Mindestbestellmenge: 141
FQA10N60CONSEMIDescription: ONSEMI - FQA10N60C - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 46727 Stücke:
Lieferzeit 14-21 Tag (e)
FQA10N80onsemi / FairchildMOSFET 800V N-Channel QFET
Produkt ist nicht verfügbar
FQA10N80onsemiDescription: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
FQA10N80Fairchild SemiconductorDescription: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 58266 Stücke:
Lieferzeit 21-28 Tag (e)
193+3.75 EUR
Mindestbestellmenge: 193
FQA10N80Fairchild
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA10N80-F109ON SemiconductorTrans MOSFET N-CH 800V 9.8A 3-Pin(3+Tab) TO-3P T/R
Produkt ist nicht verfügbar
FQA10N80ConsemiDescription: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
FQA10N80CFAIRCHILD2005 TO-3P
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA10N80Consemi / FairchildMOSFET 800V N-Ch advance QFET
Produkt ist nicht verfügbar
FQA10N80C-F109ON Semiconductor
auf Bestellung 11250 Stücke:
Lieferzeit 21-28 Tag (e)
FQA10N80C-F109onsemi / FairchildMOSFET 800V N-Ch QFET Advance
auf Bestellung 445 Stücke:
Lieferzeit 14-28 Tag (e)
5+11.18 EUR
10+ 10.06 EUR
25+ 9.52 EUR
100+ 8.24 EUR
Mindestbestellmenge: 5
FQA10N80C-F109ON SemiconductorTrans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA10N80C-F109ON SemiconductorTrans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA10N80C-F109onsemiDescription: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
FQA10N80C-F109ONSEMIDescription: ONSEMI - FQA10N80C-F109 - Leistungs-MOSFET, n-Kanal, 800 V, 10 A, 0.93 ohm, TO-3PN, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 800
Dauer-Drainstrom Id: 10
Qualifikation: -
MSL: -
Verlustleistung Pd: 240
Gate-Source-Schwellenspannung, max.: 5
Verlustleistung: 240
Bauform - Transistor: TO-3PN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.93
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.93
SVHC: Lead (17-Jan-2022)
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
FQA10N80C-F109ON SemiconductorTrans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA10N80_F109onsemiDescription: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
FQA10N80_F109onsemi / FairchildMOSFET 800V N-Channel QFET
Produkt ist nicht verfügbar
FQA11N90ON SemiconductorTrans MOSFET N-CH 900V 11.4A 3-Pin(3+Tab) TO-3P Rail
Produkt ist nicht verfügbar
FQA11N90onsemi / FairchildMOSFET 900V N-Channel QFET
Produkt ist nicht verfügbar
FQA11N90FAIRCHILD
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA11N90onsemiDescription: MOSFET N-CH 900V 11.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
FQA11N90-F109onsemi / FairchildMOSFET 900V N-Channel QFET
Produkt ist nicht verfügbar
FQA11N90-F109ON SemiconductorTrans MOSFET N-CH 900V 11.4A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA11N90-F109onsemiDescription: MOSFET N-CH 900V 11.4A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
FQA11N90-F109ONSEMIDescription: ONSEMI - FQA11N90-F109 - Leistungs-MOSFET, n-Kanal, 900 V, 11.4 A, 0.75 ohm, TO-3PN
Drain-Source-Spannung Vds: 900
Dauer-Drainstrom Id: 11.4
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 300
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3
Produktpalette: QFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.75
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA11N90-F109ON SemiconductorTrans MOSFET N-CH 900V 11.4A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA11N90-F109
Produktcode: 147569		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA11N90-F109ON SemiconductorTrans MOSFET N-CH 900V 11.4A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA11N90C
Produktcode: 196558		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA11N90Consemi / FairchildMOSFET 900V N-Ch Q-FET advance C-Series
Produkt ist nicht verfügbar
FQA11N90CON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3PN
Produkt ist nicht verfügbar
FQA11N90ConsemiDescription: MOSFET N-CH 900V 11A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
FQA11N90C-F109ON Semiconductor
auf Bestellung 7300 Stücke:
Lieferzeit 21-28 Tag (e)
FQA11N90C-F109onsemiDescription: MOSFET N-CH 900V 11A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
FQA11N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA11N90C-F109onsemi / FairchildMOSFET 900V N-Ch Q-FET advance C-Series
Produkt ist nicht verfügbar
FQA11N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA11N90C (FQA11N90C_F109) (Transistor)
Produktcode: 48424		Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
FQA12N06CFAIRCHIL
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA12N60ONSEMIDescription: ONSEMI - FQA12N60 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9750 Stücke:
Lieferzeit 14-21 Tag (e)
FQA12N60Fairchild SemiconductorDescription: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9750 Stücke:
Lieferzeit 21-28 Tag (e)
189+3.82 EUR
Mindestbestellmenge: 189
FQA12N60onsemi / FairchildMOSFET 600V N-Channel QFET
Produkt ist nicht verfügbar
FQA12N60FAIRCHILDTO-3P 05+
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)
FQA12P20onsemi / FairchildMOSFET 200V P-Channel QFET
Produkt ist nicht verfügbar
FQA12P20
Produktcode: 182099		Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
FQA12P20ON SemiconductorTrans MOSFET P-CH 200V 12.6A 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
FQA12P20onsemiDescription: MOSFET P-CH 200V 12.6A TO3P
Produkt ist nicht verfügbar
FQA13N50FAIRCHILD09+
auf Bestellung 120 Stücke:
Lieferzeit 21-28 Tag (e)
FQA13N50ON SemiconductorTrans MOSFET N-CH 500V 13.4A 3-Pin(3+Tab) TO-3P Rail
Produkt ist nicht verfügbar
FQA13N50onsemiDescription: MOSFET N-CH 500V 13.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
FQA13N50onsemi / FairchildMOSFET 500V N-Channel QFET
Produkt ist nicht verfügbar
FQA13N50Consemi / FairchildMOSFET 500V N-Channel Adv Q-FET C-Series
Produkt ist nicht verfügbar
FQA13N50ConsemiDescription: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Produkt ist nicht verfügbar
FQA13N50C
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA13N50CON SemiconductorTrans MOSFET N-CH 500V 13.5A 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
FQA13N50CFairchild SemiconductorDescription: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 11426 Stücke:
Lieferzeit 21-28 Tag (e)
133+5.43 EUR
Mindestbestellmenge: 133
FQA13N50C
Produktcode: 190199		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA13N50C-F109onsemiDescription: MOSFET N-CH 500V 13.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.75A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Produkt ist nicht verfügbar
FQA13N50C-F109ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; Idm: 54A; 218W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.5A
Pulsed drain current: 54A
Power dissipation: 218W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQA13N50C-F109ON SemiconductorTrans MOSFET N-CH 500V 13.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA13N50C-F109ON SemiconductorTrans MOSFET N-CH 500V 13.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA13N50C-F109ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; Idm: 54A; 218W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.5A
Pulsed drain current: 54A
Power dissipation: 218W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQA13N50C-F109onsemi / FairchildMOSFET 500V CFET
auf Bestellung 496 Stücke:
Lieferzeit 14-28 Tag (e)
7+8.66 EUR
10+ 7.8 EUR
25+ 7.38 EUR
100+ 6.4 EUR
Mindestbestellmenge: 7
FQA13N50CFONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.5A; Idm: 60A; 218W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.5A
Pulsed drain current: 60A
Power dissipation: 218W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQA13N50CFonsemiDescription: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
FQA13N50CFonsemi / FairchildMOSFET 500V N-Ch C-FET (FRFET)
auf Bestellung 627 Stücke:
Lieferzeit 14-28 Tag (e)
9+6.27 EUR
10+ 5.77 EUR
25+ 5.49 EUR
100+ 4.81 EUR
450+ 4.78 EUR
Mindestbestellmenge: 9
FQA13N50CFonsemiDescription: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 411 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.4 EUR
10+ 7.07 EUR
100+ 5.72 EUR
Mindestbestellmenge: 4
FQA13N50CFONSEMIDescription: ONSEMI - FQA13N50CF - Leistungs-MOSFET, n-Kanal, 500 V, 15 A, 0.43 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 218
Gate-Source-Schwellenspannung, max.: 4
euEccn: NLR
Verlustleistung: 218
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3
Produktpalette: QFET FRFET
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.43
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.43
SVHC: Lead (17-Jan-2022)
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
FQA13N50CF
auf Bestellung 120 Stücke:
Lieferzeit 21-28 Tag (e)
FQA13N50CFON SemiconductorTrans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA13N50CFON SemiconductorTrans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
FQA13N50CF-F109ON SemiconductorTrans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
FQA13N50CF_F109onsemiDescription: MOSFET N-CH 500V 15A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
FQA13N80FAIRCHILD2002 TO-3P
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA13N80Fairchild SemiconductorDescription: MOSFET N-CH 800V 12.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 134 Stücke:
Lieferzeit 21-28 Tag (e)
134+5.74 EUR
Mindestbestellmenge: 134
FQA13N80
Produktcode: 76061		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA13N80onsemi / FairchildMOSFET TO-3P N-CH 600V
Produkt ist nicht verfügbar
FQA13N80-F109ON SemiconductorTrans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA13N80-F109onsemiDescription: MOSFET N-CH 800V 12.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 65 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.38 EUR
30+ 11.4 EUR
Mindestbestellmenge: 2
FQA13N80-F109ON SemiconductorTrans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
23+6.99 EUR
26+ 5.94 EUR
35+ 4.26 EUR
120+ 4.05 EUR
270+ 3.85 EUR
510+ 3.53 EUR
Mindestbestellmenge: 23
FQA13N80-F109ON SemiconductorTrans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA13N80-F109onsemi / FairchildMOSFET TO-3P N-CH 600V
auf Bestellung 14 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.48 EUR
25+ 10.48 EUR
100+ 9.85 EUR
450+ 8.76 EUR
Mindestbestellmenge: 4
FQA13N80-F109ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 50.4A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
15+5.08 EUR
20+ 3.64 EUR
21+ 3.44 EUR
450+ 3.39 EUR
Mindestbestellmenge: 15
FQA13N80-F109ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 50.4A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.08 EUR
20+ 3.64 EUR
21+ 3.44 EUR
Mindestbestellmenge: 15
FQA13N80-F109ON Semiconductor
auf Bestellung 14850 Stücke:
Lieferzeit 21-28 Tag (e)
FQA13N80_F109
Produktcode: 178511		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA13N80_F109ON-SemicoductorN-MOSFET 800V 12.6A 300W FQA13N80_F109 FQA13N80 Fairchild TFQA13n80
Anzahl je Verpackung: 2 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
4+10.44 EUR
Mindestbestellmenge: 4
FQA13N80_F109FAIRCHILDMOSFET N-CH 800V 12.6A TO-3P
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
1+28.11 EUR
FQA13N80_F109ON-SemicoductorN-MOSFET 800V 12.6A 300W FQA13N80_F109 FQA13N80 Fairchild TFQA13n80
Anzahl je Verpackung: 2 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
4+10.44 EUR
Mindestbestellmenge: 4
FQA140N10onsemi / FairchildMOSFET 100V N-Channel QFET
auf Bestellung 2862 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.38 EUR
10+ 14.04 EUR
25+ 12.04 EUR
100+ 10.71 EUR
250+ 10.22 EUR
450+ 9.36 EUR
900+ 8.87 EUR
Mindestbestellmenge: 4
FQA140N10ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQA140N10ON SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA140N10ON SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
FQA140N10ON SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA140N10onsemiDescription: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 645 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.25 EUR
30+ 12.99 EUR
120+ 11.62 EUR
510+ 10.25 EUR
Mindestbestellmenge: 2
FQA140N10ON SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA140N10ON SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA140N10ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQA14N30onsemiDescription: MOSFET N-CH 300V 15A TO3P
Produkt ist nicht verfügbar
FQA14N30Fairchild SemiconductorDescription: MOSFET N-CH 300V 15A TO3P
auf Bestellung 230 Stücke:
Lieferzeit 21-28 Tag (e)
230+4.24 EUR
Mindestbestellmenge: 230
FQA15N70Fairchild SemiconductorDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V
auf Bestellung 379 Stücke:
Lieferzeit 21-28 Tag (e)
54+13.31 EUR
Mindestbestellmenge: 54
FQA15N70FSC0408
auf Bestellung 13 Stücke:
Lieferzeit 21-28 Tag (e)
FQA15N70ON Semiconductor / FairchildMOSFET DISC BY MFG 7/03
Produkt ist nicht verfügbar
FQA160N08onsemiDescription: MOSFET N-CH 80V 160A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Produkt ist nicht verfügbar
FQA160N08FAIRCHILD
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA160N08ON SemiconductorTrans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA160N08ONSEMIDescription: ONSEMI - FQA160N08 - MOSFET'S - SINGLE
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA160N08onsemi / FairchildMOSFET 80V N-Channel QFET
Produkt ist nicht verfügbar
FQA16N25ConsemiDescription: MOSFET N-CH 250V 17.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.8A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Produkt ist nicht verfügbar
FQA16N50Fairchild SemiconductorDescription: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 2646 Stücke:
Lieferzeit 21-28 Tag (e)
72+10.06 EUR
Mindestbestellmenge: 72
FQA16N50FAIRCHILD09+
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
FQA16N50FAIRCHIL09+ QFN-16
auf Bestellung 1720 Stücke:
Lieferzeit 21-28 Tag (e)
FQA16N50ON SemiconductorTrans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-3P Rail
Produkt ist nicht verfügbar
FQA16N50ON Semiconductor / FairchildMOSFET 500V N-Channel QFET
Produkt ist nicht verfügbar
FQA16N50-F109ON SemiconductorTRANS MOSFET N-CH 500V 16A 3-PIN(3+TAB) TO-3P RAIL
Produkt ist nicht verfügbar
FQA16N50-F109onsemi / FairchildMOSFET 500v QFET
auf Bestellung 20 Stücke:
Lieferzeit 14-28 Tag (e)
FQA16N50-F109onsemiDescription: MOSFET N-CH 500V 16A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
FQA170N06ON SemiconductorTrans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA170N06onsemiDescription: MOSFET N-CH 60V 170A TO3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V
auf Bestellung 250 Stücke:
Lieferzeit 21-28 Tag (e)
66+10.86 EUR
Mindestbestellmenge: 66
FQA170N06onsemi / FairchildMOSFET 60V N-Channel QFET
auf Bestellung 2 Stücke:
Lieferzeit 14-28 Tag (e)
3+20.49 EUR
10+ 18.51 EUR
25+ 18.04 EUR
100+ 15.34 EUR
Mindestbestellmenge: 3
FQA170N06onsemiDescription: MOSFET N-CH 60V 170A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
FQA170N06ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 680A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 680A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQA170N06ONSEMIDescription: ONSEMI - FQA170N06 - Leistungs-MOSFET, Universal, n-Kanal, 60 V, 170 A, 0.0056 ohm, TO-3P, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 170
Qualifikation: -
Verlustleistung Pd: 375
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 375
Bauform - Transistor: TO-3P
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0056
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0056
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA170N06
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA17N40onsemiDescription: MOSFET N-CH 400V 17.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
FQA17N40ON SemiconductorTrans MOSFET N-CH 400V 17.2A 3-Pin(3+Tab) TO-3P Rail
Produkt ist nicht verfügbar
FQA17N40Fairchild SemiconductorDescription: MOSFET N-CH 400V 17.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
auf Bestellung 398 Stücke:
Lieferzeit 21-28 Tag (e)
175+4.09 EUR
Mindestbestellmenge: 175
FQA17P10onsemiDescription: MOSFET P-CH 100V 18A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
FQA18N50V2Fairchild SemiconductorDescription: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 475 Stücke:
Lieferzeit 21-28 Tag (e)
98+7.39 EUR
Mindestbestellmenge: 98
FQA18N50V2FAIRCHILD09+
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
FQA18N50V2onsemi / FairchildMOSFET 500V N-Ch QFET V2 Series
Produkt ist nicht verfügbar
FQA19N20onsemi / FairchildMOSFET
Produkt ist nicht verfügbar
FQA19N20ConsemiDescription: MOSFET N-CH 200V 21.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Produkt ist nicht verfügbar
FQA19N20Consemi / FairchildMOSFET 200V N-Channel Advance Q-FET
Produkt ist nicht verfügbar
FQA19N20C_NLonsemi / FairchildMOSFET N-CH/200V/19A/QFET
Produkt ist nicht verfügbar
FQA19N20LonsemiDescription: MOSFET N-CH 200V 25A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
FQA19N60ON SemiconductorTrans MOSFET N-CH 600V 18.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA19N60onsemi / FairchildMOSFET 600V N-CH QFET
auf Bestellung 450 Stücke:
Lieferzeit 14-28 Tag (e)
FQA19N60
auf Bestellung 24590 Stücke:
Lieferzeit 21-28 Tag (e)
FQA19N60onsemiDescription: MOSFET N-CH 600V 18.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 9.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
FQA19N60ON SemiconductorTrans MOSFET N-CH 600V 18.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA19N60ONSEMIDescription: ONSEMI - FQA19N60 - Leistungs-MOSFET, n-Kanal, 600 V, 18.5 A, 0.38 ohm, TO-3P, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600
Dauer-Drainstrom Id: 18.5
Qualifikation: -
Verlustleistung Pd: 300
Gate-Source-Schwellenspannung, max.: 5
Verlustleistung: 300
Bauform - Transistor: TO-3P
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.38
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.38
SVHC: Lead (08-Jul-2021)
Produkt ist nicht verfügbar
FQA20N40onsemiDescription: MOSFET N-CH 400V 19.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 9.8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
FQA22P10module
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA22P10onsemiDescription: MOSFET P-CH 100V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
FQA22P10FAIRCHILSOP-8
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA22P10ON SemiconductorTrans MOSFET P-CH 100V 24A 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
FQA24N50ON SemiconductorTrans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
19+8.62 EUR
24+ 6.3 EUR
25+ 6.01 EUR
50+ 5.72 EUR
100+ 3.99 EUR
Mindestbestellmenge: 19
FQA24N50ON SemiconductorTrans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA24N50ON SemiconductorTrans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA24N50onsemi / FairchildMOSFET 500V N-Channel QFET
Produkt ist nicht verfügbar
FQA24N50
Produktcode: 192723		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA24N50ON Semiconductor
auf Bestellung 15700 Stücke:
Lieferzeit 21-28 Tag (e)
FQA24N50onsemiDescription: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
FQA24N50-ONonsemiDescription: 24A, 500V, 0.2OHM, N-CHANNEL, M
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
FQA24N50FFAIRCHILD2004 TO-3P
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA24N50FonsemiDescription: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
FQA24N50Fonsemi / FairchildMOSFET 500V N-Channel FRFET
Produkt ist nicht verfügbar
FQA24N50FFairchild
auf Bestellung 2780 Stücke:
Lieferzeit 21-28 Tag (e)
FQA24N50FON SemiconductorTrans MOSFET N-CH 500V 24A 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
FQA24N50F_F109onsemiDescription: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
FQA24N50F_NLonsemi / FairchildMOSFET N-CH/500V/24A/0.2OHM
Produkt ist nicht verfügbar
FQA24N50_F109onsemiDescription: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
FQA24N50_NLonsemi / FairchildMOSFET N-CH/500V/24A/0.2OHM
Produkt ist nicht verfügbar
FQA24N60ON SemiconductorTrans MOSFET N-CH 600V 23.5A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
16+9.91 EUR
18+ 8.45 EUR
30+ 7.26 EUR
120+ 6.58 EUR
Mindestbestellmenge: 16
FQA24N60onsemi / FairchildMOSFET 600V N-Channel QFET
auf Bestellung 132 Stücke:
Lieferzeit 14-28 Tag (e)
3+17.86 EUR
10+ 16.41 EUR
25+ 13.94 EUR
100+ 13.1 EUR
250+ 12.87 EUR
450+ 12.01 EUR
900+ 10.4 EUR
Mindestbestellmenge: 3
FQA24N60ONSEMIDescription: ONSEMI - FQA24N60 - Leistungs-MOSFET, n-Kanal, 600 V, 23.5 A, 0.24 ohm, TO-3P, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 23.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 310W
Bauform - Transistor: TO-3P
Anzahl der Pins: 3Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.24ohm
SVHC: Lead (14-Jun-2023)
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)
FQA24N60ON-SemicoductorTrans MOSFET N-CH 600V 23.5A 3-Pin(3+Tab) TO-3PN Rail FQA24N60 Fairchild TFQA24n60
Anzahl je Verpackung: 2 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
4+14.73 EUR
Mindestbestellmenge: 4
FQA24N60
Produktcode: 153338		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA24N60ON SemiconductorTrans MOSFET N-CH 600V 23.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA24N60ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.24 EUR
10+ 7.36 EUR
11+ 6.96 EUR
Mindestbestellmenge: 8
FQA24N60ON SemiconductorTrans MOSFET N-CH 600V 23.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA24N60ON SemiconductorTrans MOSFET N-CH 600V 23.5A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
16+9.91 EUR
18+ 8.45 EUR
30+ 7.26 EUR
120+ 6.58 EUR
Mindestbestellmenge: 16
FQA24N60ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.24 EUR
10+ 7.36 EUR
11+ 6.96 EUR
30+ 6.85 EUR
Mindestbestellmenge: 8
FQA24N60ON SemiconductorTrans MOSFET N-CH 600V 23.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA24N60onsemiDescription: MOSFET N-CH 600V 23.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11.8A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 246 Stücke:
Lieferzeit 21-28 Tag (e)
2+19.11 EUR
30+ 15.26 EUR
120+ 13.65 EUR
Mindestbestellmenge: 2
FQA25N120DXI.M.Z2002 TO-3P
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA25N120D (Transistor)
Produktcode: 76065		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA27N25ON SemiconductorTrans MOSFET N-CH 250V 27A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA27N25ON SemiconductorTrans MOSFET N-CH 250V 27A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA27N25
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA27N25Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 237 Stücke:
Lieferzeit 21-28 Tag (e)
237+3.82 EUR
Mindestbestellmenge: 237
FQA27N25onsemi / FairchildMOSFET 250V N-Channel QFET
auf Bestellung 119 Stücke:
Lieferzeit 14-28 Tag (e)
7+7.64 EUR
10+ 6.42 EUR
25+ 6.06 EUR
100+ 5.2 EUR
250+ 4.45 EUR
450+ 3.72 EUR
Mindestbestellmenge: 7
FQA27N25ONSEMIDescription: ONSEMI - FQA27N25 - Leistungs-MOSFET, n-Kanal, 250 V, 27 A, 0.083 ohm, TO-3PN, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 250
Dauer-Drainstrom Id: 27
Qualifikation: -
Verlustleistung Pd: 210
Gate-Source-Schwellenspannung, max.: 5
Verlustleistung: 210
Bauform - Transistor: TO-3PN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.083
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.083
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA27N25ON SemiconductorTrans MOSFET N-CH 250V 27A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA28N15ONSТранзистор польовий потужний MOSFET N-CH 150V 33A TO-3PN-3
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
1+9.3 EUR
10+ 8.56 EUR
FQA28N15ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 23.3A; Idm: 132A; 227W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 23.3A
Pulsed drain current: 132A
Power dissipation: 227W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQA28N15onsemiDescription: MOSFET N-CH 150V 33A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
FQA28N15onsemi / FairchildMOSFET 150V N-Channel QFET
Produkt ist nicht verfügbar
FQA28N15ONSEMIDescription: ONSEMI - FQA28N15 - Leistungs-MOSFET, n-Kanal, 150 V, 33 A, 0.067 ohm, TO-3PN, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 150
Dauer-Drainstrom Id: 33
Qualifikation: -
Verlustleistung Pd: 227
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 227
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.067
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.067
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA28N15ON SemiconductorTrans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA28N15
Produktcode: 52211		Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
FQA28N15ON SemiconductorTrans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA28N15_F109onsemiDescription: MOSFET N-CH 150V 33A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
FQA28N50ON SemiconductorTrans MOSFET N-CH 500V 28.4A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 3600 Stücke:
Lieferzeit 14-21 Tag (e)
450+4.75 EUR
900+ 4.28 EUR
2700+ 3.85 EUR
Mindestbestellmenge: 450
FQA28N50FSC
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA28N50onsemiDescription: MOSFET N-CH 500V 28.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.4A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 14.2A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Produkt ist nicht verfügbar
FQA28N50ON SemiconductorTrans MOSFET N-CH 500V 28.4A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA28N50FAIRCHILD
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA28N50onsemi / FairchildMOSFET 500V N-Channel QFET
auf Bestellung 173 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.55 EUR
10+ 11.39 EUR
25+ 10.74 EUR
100+ 9.2 EUR
250+ 8.71 EUR
450+ 7.41 EUR
900+ 6.99 EUR
Mindestbestellmenge: 4
FQA28N50-ONonsemiDescription: 28.4A, 500V, 0.16OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 19050 Stücke:
Lieferzeit 21-28 Tag (e)
109+6.63 EUR
Mindestbestellmenge: 109
FQA28N50Fonsemi / FairchildMOSFET 500V N-Channel FRFET
Produkt ist nicht verfügbar
FQA28N50FonsemiDescription: MOSFET N-CH 500V 28.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.4A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 14.2A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Produkt ist nicht verfügbar
FQA28N50FON SemiconductorTrans MOSFET N-CH 500V 28.4A 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
FQA28N50_F109onsemi / FairchildMOSFET 500V QFET
Produkt ist nicht verfügbar
FQA28N50_F109onsemiDescription: MOSFET N-CH 500V 28.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.4A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 14.2A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Produkt ist nicht verfügbar
FQA30N40
Produktcode: 173624		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA30N40ON SemiconductorTrans MOSFET N-CH 400V 30A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA30N40onsemiDescription: POWER FIELD-EFFECT TRANSISTOR, 3
Produkt ist nicht verfügbar
FQA30N40ON SemiconductorTrans MOSFET N-CH 400V 30A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA30N40ON SemiconductorTrans MOSFET N-CH 400V 30A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA30N40onsemi / FairchildMOSFET 400V N-Channel QFET
auf Bestellung 236 Stücke:
Lieferzeit 14-28 Tag (e)
FQA30N40onsemiDescription: MOSFET N-CH 400V 30A TO3PN
Produkt ist nicht verfügbar
FQA30N40ONSEMIDescription: ONSEMI - FQA30N40 - Leistungs-MOSFET, n-Kanal, 400 V, 30 A, 0.14 ohm, TO-3PN, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 400
Dauer-Drainstrom Id: 30
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 290
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.14
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA30N40_NLonsemi / FairchildMOSFET N-CH/400V/30A/0.14OHM
Produkt ist nicht verfügbar
FQA32N20CON SemiconductorTrans MOSFET N-CH 200V 32A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
FQA32N20CON SemiconductorTrans MOSFET N-CH 200V 32A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
76+2.07 EUR
77+ 1.97 EUR
80+ 1.75 EUR
100+ 1.6 EUR
Mindestbestellmenge: 76
FQA32N20CONSEMIDescription: ONSEMI - FQA32N20C - Leistungs-MOSFET, n-Kanal, 200 V, 32 A, 0.068 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 32A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 204W
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 204W
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.068ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.068ohm
SVHC: Lead (17-Jan-2022)
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)
FQA32N20C
Produktcode: 169364		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA32N20CON SemiconductorTrans MOSFET N-CH 200V 32A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 360 Stücke:
Lieferzeit 14-21 Tag (e)
69+2.3 EUR
100+ 2.11 EUR
250+ 1.95 EUR
Mindestbestellmenge: 69
FQA32N20Consemi / FairchildMOSFET 200V N-Channel Advance Q-FET
Produkt ist nicht verfügbar
FQA32N20CFairchildN-MOSFET 32A 200V 204W 0.082Ω FQA32N20C TFQA32n20c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.56 EUR
Mindestbestellmenge: 20
FQA32N20ConsemiDescription: MOSFET N-CH 200V 32A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 16A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Produkt ist nicht verfügbar
FQA33N10ON SemiconductorDescription: MOSFET N-CH 100V 36A TO-3P
Produkt ist nicht verfügbar
FQA33N10LonsemiDescription: MOSFET N-CH 100V 36A TO3P
Produkt ist nicht verfügbar
FQA34N20
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA34N20onsemiDescription: MOSFET N-CH 200V 34A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
FQA34N20LFairchild SemiconductorDescription: MOSFET N-CH 200V 34A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 669 Stücke:
Lieferzeit 21-28 Tag (e)
217+3.31 EUR
Mindestbestellmenge: 217
FQA34N25Fairchild SemiconductorDescription: MOSFET N-CH 250V 34A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 17A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 6555 Stücke:
Lieferzeit 21-28 Tag (e)
112+6.46 EUR
Mindestbestellmenge: 112
FQA35N40FSC
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA35N40onsemiDescription: MOSFET N-CH 400V 35A TO3P
Produkt ist nicht verfügbar
FQA35N40Fairchild SemiconductorDescription: MOSFET N-CH 400V 35A TO3P
auf Bestellung 597 Stücke:
Lieferzeit 21-28 Tag (e)
73+10.38 EUR
Mindestbestellmenge: 73
FQA35N40ON SemiconductorTrans MOSFET N-CH 400V 35A 3-Pin(3+Tab) TO-3P Rail
Produkt ist nicht verfügbar
FQA36P15ON SemiconductorTrans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA36P15ONSEMIDescription: ONSEMI - FQA36P15 - Leistungs-MOSFET, p-Kanal, 150 V, 36 A, 0.09 ohm, TO-3P, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 150
Dauer-Drainstrom Id: 36
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 294
Bauform - Transistor: TO-3P
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: p-Kanal
Betriebswiderstand, Rds(on): 0.09
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 4
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA36P15
Produktcode: 52210		Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
FQA36P15ON SemiconductorTrans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA36P15onsemi / FairchildMOSFET 150V P-Channel QFET
auf Bestellung 2996 Stücke:
Lieferzeit 1000-1014 Tag (e)
6+9.57 EUR
10+ 8.03 EUR
30+ 7.59 EUR
120+ 6.5 EUR
270+ 6.14 EUR
510+ 5.77 EUR
Mindestbestellmenge: 6
FQA36P15ON SemiconductorTrans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA36P15onsemiDescription: MOSFET P-CH 150V 36A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
Produkt ist nicht verfügbar
FQA36P15ON SemiconductorTrans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA36P15_F109onsemiDescription: MOSFET P-CH 150V 36A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
Produkt ist nicht verfügbar
FQA38N30onsemi / FairchildMOSFET 300V N-Channel QFET
auf Bestellung 355 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.65 EUR
10+ 13.42 EUR
25+ 12.17 EUR
100+ 11.18 EUR
250+ 10.53 EUR
450+ 9.85 EUR
900+ 8.84 EUR
Mindestbestellmenge: 4
FQA38N30FSC09+ DIP16
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA38N30ON SemiconductorTrans MOSFET N-CH 300V 38.4A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA38N30ON SemiconductorTrans MOSFET N-CH 300V 38.4A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA38N30FAIRCHILD
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA38N30ONSEMIDescription: ONSEMI - FQA38N30 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 3499 Stücke:
Lieferzeit 14-21 Tag (e)
FQA38N30ON Semiconductor
auf Bestellung 71 Stücke:
Lieferzeit 21-28 Tag (e)
FQA38N30ON SemiconductorTrans MOSFET N-CH 300V 38.4A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA38N30onsemiDescription: MOSFET N-CH 300V 38.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.4A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 19.2A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Produkt ist nicht verfügbar
FQA38N30
Produktcode: 76066		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA40N25ON SemiconductorTrans MOSFET N-CH 250V 40A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA40N25ONSEMIDescription: ONSEMI - FQA40N25 - Leistungs-MOSFET, n-Kanal, 250 V, 40 A, 0.051 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 280W
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.051ohm
auf Bestellung 483 Stücke:
Lieferzeit 14-21 Tag (e)
FQA40N25ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 280W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.8 EUR
17+ 4.2 EUR
450+ 3.2 EUR
Mindestbestellmenge: 15
FQA40N25ON SemiconductorTrans MOSFET N-CH 250V 40A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA40N25onsemiDescription: MOSFET N-CH 250V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 280 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.1 EUR
30+ 7.21 EUR
120+ 6.18 EUR
Mindestbestellmenge: 3
FQA40N25onsemi / FairchildMOSFET 250V N-Channel QFET
auf Bestellung 748 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.15 EUR
10+ 7.72 EUR
25+ 6.21 EUR
250+ 5.51 EUR
450+ 4.91 EUR
Mindestbestellmenge: 6
FQA40N25ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 280W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.8 EUR
17+ 4.2 EUR
Mindestbestellmenge: 15
FQA40N25PWDSamsung
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA44N08Fairchild SemiconductorDescription: MOSFET N-CH 80V 49.8A TO-3P
Produkt ist nicht verfügbar
FQA44N10FSC
auf Bestellung 420 Stücke:
Lieferzeit 21-28 Tag (e)
FQA44N10onsemiDescription: MOSFET N-CH 100V 48A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 24A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
FQA44N10ON SemiconductorTrans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-3P Rail
Produkt ist nicht verfügbar
FQA44N30onsemi / FairchildMOSFET 300V N-Channel QFET
auf Bestellung 393 Stücke:
Lieferzeit 14-28 Tag (e)
3+19.19 EUR
10+ 17.34 EUR
25+ 16.56 EUR
100+ 14.38 EUR
Mindestbestellmenge: 3
FQA44N30onsemiDescription: MOSFET N-CH 300V 43.5A TO3PN
auf Bestellung 2700 Stücke:
Lieferzeit 21-28 Tag (e)
FQA44N30ON SemiconductorTrans MOSFET N-CH 300V 43.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA44N30onsemiDescription: MOSFET N-CH 300V 43.5A TO3PN
auf Bestellung 2700 Stücke:
Lieferzeit 21-28 Tag (e)
FQA44N30ONSEMIDescription: ONSEMI - FQA44N30 - MOSFET'S - SINGLE
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA44N30ON SemiconductorTrans MOSFET N-CH 300V 43.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA44N30ON SemiconductorTrans MOSFET N-CH 300V 43.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA46N15ON-SemicoductorN-MOSFET 150V 50A 250W FQA46N15 Fairchild TFQA46n15
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
5+8.58 EUR
Mindestbestellmenge: 5
FQA46N15ON SemiconductorTrans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
58+2.71 EUR
Mindestbestellmenge: 58
FQA46N15ON SemiconductorTrans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
51+3.11 EUR
Mindestbestellmenge: 51
FQA46N15onsemiDescription: MOSFET N-CH 150V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Produkt ist nicht verfügbar
FQA46N15ONSEMIDescription: ONSEMI - FQA46N15 - Leistungs-MOSFET, n-Kanal, 150 V, 50 A, 0.033 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.033ohm
SVHC: Lead (17-Jan-2022)
auf Bestellung 2377 Stücke:
Lieferzeit 14-21 Tag (e)
FQA46N15ON SemiconductorTrans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
FQA46N15ON SemiconductorTrans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
58+2.71 EUR
Mindestbestellmenge: 58
FQA46N15ON SemiconductorTrans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
55+2.86 EUR
Mindestbestellmenge: 55
FQA46N15onsemi / FairchildMOSFET 150V N-Channel QFET
auf Bestellung 1865 Stücke:
Lieferzeit 14-28 Tag (e)
11+4.94 EUR
450+ 4.26 EUR
Mindestbestellmenge: 11
FQA46N15_F109onsemiDescription: MOSFET N-CH 150V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Produkt ist nicht verfügbar
FQA47P06ON SemiconductorTrans MOSFET P-CH 60V 55A Automotive 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
FQA47P06FSC08+ TSOP-48
auf Bestellung 220 Stücke:
Lieferzeit 21-28 Tag (e)
FQA47P06onsemiDescription: MOSFET P-CH 60V 55A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
FQA47P06FSC
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA48N20onsemiDescription: MOSFET N-CH 200V 48A TO3P
Produkt ist nicht verfügbar
FQA48N20FSC
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA48N20FAIRCHLD08+ DIP28
auf Bestellung 416 Stücke:
Lieferzeit 21-28 Tag (e)
FQA4N90FAIRCHILD2004 TO-220
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA55N10ON SemiconductorTrans MOSFET N-CH 100V 61A 3-Pin(3+Tab) TO-3P Rail
Produkt ist nicht verfügbar
FQA55N10ON SemiconductorDescription: MOSFET N-CH 100V 61A TO3P
Produkt ist nicht verfügbar
FQA55N25ONSEMIDescription: ONSEMI - FQA55N25 - Leistungs-MOSFET, n-Kanal, 250 V, 55 A, 0.04 ohm, TO-3P, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 250
Dauer-Drainstrom Id: 55
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 310
Bauform - Transistor: TO-3P
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.04
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: Lead (17-Jan-2022)
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
FQA55N25ON SemiconductorTrans MOSFET N-CH 250V 55A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA55N25onsemiDescription: MOSFET N-CH 250V 55A TO3PN
Produkt ist nicht verfügbar
FQA55N25onsemi / FairchildMOSFET 250V N-Channel QFET
auf Bestellung 423 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.33 EUR
10+ 16.25 EUR
25+ 15.34 EUR
100+ 13.34 EUR
Mindestbestellmenge: 3
FQA55N25
Produktcode: 145079		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA55N25ON SemiconductorTrans MOSFET N-CH 250V 55A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA55N25FSCTO-247 05+
auf Bestellung 2260 Stücke:
Lieferzeit 21-28 Tag (e)
FQA55N25ON SemiconductorTrans MOSFET N-CH 250V 55A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA58N08onsemi / FairchildMOSFET
Produkt ist nicht verfügbar
FQA5N90onsemi / FairchildMOSFET 900V N-Channel QFET
Produkt ist nicht verfügbar
FQA5N90onsemiDescription: MOSFET N-CH 900V 5.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.9A, 10V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
FQA5N90-F109ON SemiconductorTrans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-3P Rail
Produkt ist nicht verfügbar
FQA5N90_F109onsemi / FairchildMOSFET 900V N-Channel QFET
Produkt ist nicht verfügbar
FQA5N90_F109onsemiDescription: MOSFET N-CH 900V 5.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.9A, 10V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
FQA5N90_NLonsemi / FairchildMOSFET
Produkt ist nicht verfügbar
FQA62N25CON SemiconductorTrans MOSFET N-CH 250V 62A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)
16+10.15 EUR
19+ 8.18 EUR
25+ 7.37 EUR
100+ 6.03 EUR
Mindestbestellmenge: 16
FQA62N25ConsemiDescription: MOSFET N-CH 250V 62A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Produkt ist nicht verfügbar
FQA62N25C
auf Bestellung 430 Stücke:
Lieferzeit 21-28 Tag (e)
FQA62N25Consemi / FairchildMOSFET 250V N-Channel Adv Q-FET C-Series
Produkt ist nicht verfügbar
FQA62N25CON SemiconductorTrans MOSFET N-CH 250V 62A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA65N06onsemiDescription: MOSFET N-CH 60V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 36A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Produkt ist nicht verfügbar
FQA65N06FSC
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA65N20ON SemiconductorTrans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA65N20ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 41A; 310W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 41A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQA65N20onsemiDescription: MOSFET N-CH 200V 65A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 32.5A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Produkt ist nicht verfügbar
FQA65N20FairchildN-MOSFET 65A 200V 310W 0.032Ω FQA65N20 TFQA65n20
Anzahl je Verpackung: 2 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
4+8.54 EUR
Mindestbestellmenge: 4
FQA65N20ONSEMIDescription: ONSEMI - FQA65N20 - Leistungs-MOSFET, n-Kanal, 200 V, 65 A, 0.032 ohm, TO-3P, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 65
Qualifikation: -
Verlustleistung Pd: 310
Gate-Source-Schwellenspannung, max.: 5
Verlustleistung: 310
Bauform - Transistor: TO-3P
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.032
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.032
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA65N20onsemi / FairchildMOSFET 200V N-Channel QFET
auf Bestellung 1251 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.55 EUR
10+ 13.99 EUR
25+ 13.03 EUR
100+ 11.31 EUR
Mindestbestellmenge: 4
FQA6N70Fairchild SemiconductorDescription: MOSFET N-CH 700V 6.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.2A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 4865 Stücke:
Lieferzeit 21-28 Tag (e)
243+2.95 EUR
Mindestbestellmenge: 243
FQA6N70onsemiDescription: MOSFET N-CH 700V 6.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.2A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
FQA6N80Fairchild SemiconductorDescription: MOSFET N-CH 800V 6.3A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 3.15A, 10V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 1562 Stücke:
Lieferzeit 21-28 Tag (e)
254+2.86 EUR
Mindestbestellmenge: 254
FQA6N80_F109Fairchild SemiconductorDescription: MOSFET N-CH 800V 6.3A TO-3P
Produkt ist nicht verfügbar
FQA6N90
auf Bestellung 1800 Stücke:
Lieferzeit 21-28 Tag (e)
FQA6N90onsemiDescription: MOSFET N-CH 900V 6.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.2A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Produkt ist nicht verfügbar
FQA6N90Consemi / FairchildMOSFET 900V N-Ch Q-FET advance C-Series
Produkt ist nicht verfügbar
FQA6N90C-F109onsemi / FairchildMOSFET 900V N-Ch Q-FET advance C-Series
Produkt ist nicht verfügbar
FQA6N90C-F109ONSEMIDescription: ONSEMI - FQA6N90C-F109 - Leistungs-MOSFET, n-Kanal, 900 V, 6 A, 1.93 ohm, TO-3PN, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 900
Dauer-Drainstrom Id: 6
Qualifikation: -
MSL: -
Verlustleistung Pd: 198
Gate-Source-Schwellenspannung, max.: 5
Verlustleistung: 198
Bauform - Transistor: TO-3PN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 1.93
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 1.93
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA6N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA6N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA6N90C-F109onsemiDescription: MOSFET N-CH 900V 6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar
FQA6N90C_F109FAIRCHILD
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA6N90_F109onsemiDescription: MOSFET N-CH 900V 6.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Produkt ist nicht verfügbar
FQA70N10onsemiDescription: MOSFET N-CH 100V 70A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
FQA70N10
Produktcode: 116416		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
FQA70N10ON SemiconductorTrans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
FQA70N10ON SemiconductorTrans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
FQA70N10ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.7 EUR
22+ 3.35 EUR
28+ 2.56 EUR
30+ 2.42 EUR
Mindestbestellmenge: 20
FQA70N10ON SemiconductorTrans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 373 Stücke:
Lieferzeit 14-21 Tag (e)
34+4.63 EUR
38+ 3.99 EUR
100+ 3.13 EUR
Mindestbestellmenge: 34
FQA70N10ON SemiconductorTrans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 373 Stücke:
Lieferzeit 14-21 Tag (e)
34+4.63 EUR
38+ 3.99 EUR
100+ 3.13 EUR
Mindestbestellmenge: 34
FQA70N10onsemi / FairchildMOSFET 100V N-Channel QFET
auf Bestellung 1604 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.84 EUR
10+ 5.75 EUR
25+ 5.43 EUR
100+ 4.65 EUR
250+ 4.39 EUR
450+ 4.13 EUR
900+ 3.67 EUR
Mindestbestellmenge: 8
FQA70N10ONSEMIDescription: ONSEMI - FQA70N10 - Leistungs-MOSFET, Universal, n-Kanal, 100 V, 70 A, 0.023 ohm, TO-3P, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 70
Qualifikation: -
Verlustleistung Pd: 214
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 214
Bauform - Transistor: TO-3P
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.023
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.023
SVHC: Lead (10-Jun-2022)
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
FQA70N10ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.7 EUR
22+ 3.35 EUR
28+ 2.56 EUR
30+ 2.42 EUR
Mindestbestellmenge: 20
FQA70N10FairchildN-MOSFET 100V 70A 214W FQA70N10 Fairchild TFQA70n10
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
10+4.7 EUR
Mindestbestellmenge: 10
FQA70N10ON SemiconductorTrans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA70N15onsemi / FairchildMOSFET 150V N-Channel QFET
Produkt ist nicht verfügbar
FQA70N15ONSEMIDescription: ONSEMI - FQA70N15 - Leistungs-MOSFET, n-Kanal, 150 V, 70 A, 0.023 ohm, TO-3PN, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 150
Dauer-Drainstrom Id: 70
Qualifikation: -
MSL: -
Verlustleistung Pd: 330
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 330
Bauform - Transistor: TO-3PN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.023
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.023
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA70N15onsemiDescription: MOSFET N-CH 150V 70A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar
FQA70N15
Produktcode: 103658		Transistoren > MOSFET N-CH
ZCODE: 8541290010
Produkt ist nicht verfügbar
FQA70N15ON SemiconductorTrans MOSFET N-CH 150V 70A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
FQA70N15ON SemiconductorTrans MOSFET N-CH 150V 70A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA755N10Fairchild
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA7N60Fairchild SemiconductorDescription: MOSFET N-CH 600V 7.7A TO-3P
Produkt ist nicht verfügbar
FQA7N80Fairchild
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQA7N80Fairchild SemiconductorDescription: MOSFET N-CH 800V 7.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 1032 Stücke:
Lieferzeit 21-28 Tag (e)
211+3.41 EUR
Mindestbestellmenge: 211
FQA7N80onsemi / FairchildMOSFET 800V N-Channel QFET
Produkt ist nicht verfügbar
FQA7N80CONSEMIDescription: ONSEMI - FQA7N80C - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 25078 Stücke:
Lieferzeit 14-21 Tag (e)
FQA7N80CFairchild SemiconductorDescription: MOSFET N-CH 800V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 25453 Stücke:
Lieferzeit 21-28 Tag (e)
275+2.62 EUR
Mindestbestellmenge: 275
FQA7N80Consemi / FairchildMOSFET 800V N-Ch Q-FET advance C-Series
Produkt ist nicht verfügbar
FQA7N80C-F109onsemiDescription: POWER MOSFET, N-CHANNEL, QFET, 8
Packaging: Bulk
Part Status: Active
auf Bestellung 20890 Stücke:
Lieferzeit 21-28 Tag (e)
179+4.03 EUR
Mindestbestellmenge: 179
FQA7N80C-F109onsemi / FairchildMOSFET 800V N-Ch Q-FET advance C-Series
Produkt ist nicht verfügbar
FQA7N80C-F109ON Semiconductor800V N-CHANNEL MOSFET FQA7N80C
Produkt ist nicht verfügbar
FQA7N80C-F109ON SemiconductorTrans MOSFET N-CH 800V 7A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA7N80C-F109ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 28A; 198W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 28A
Power dissipation: 198W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQA7N80LFairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 7
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
FQA7N80_F109onsemiDescription: MOSFET N-CH 800V 7.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Produkt ist nicht verfügbar
FQA7N90onsemiDescription: MOSFET N-CH 900V 7.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Produkt ist nicht verfügbar
FQA7N90onsemi / FairchildMOSFET 900V N-Channel QFET
Produkt ist nicht verfügbar
FQA7N90Fairchild SemiconductorDescription: MOSFET N-CH 900V 7.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
auf Bestellung 939 Stücke:
Lieferzeit 21-28 Tag (e)
187+3.87 EUR
Mindestbestellmenge: 187
FQA7N90MonsemiDescription: MOSFET N-CH 900V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Produkt ist nicht verfügbar
FQA7N90M_F109onsemiDescription: MOSFET N-CH 900V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Produkt ist nicht verfügbar
FQA7N90_F109onsemiDescription: MOSFET N-CH 900V 7.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Produkt ist nicht verfügbar
FQA85N06ON SemiconductorTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
FQA85N06onsemiDescription: MOSFET N-CH 60V 100A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Produkt ist nicht verfügbar
FQA8N100CONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 225W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQA8N100CFairchildN-MOSFET 8A 1000V 225W 1.45Ω FQA8N100C TFQA8n100c
Anzahl je Verpackung: 10 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
10+11.33 EUR
Mindestbestellmenge: 10
FQA8N100Consemi / FairchildMOSFET 1000V N-Channe MOSFET
auf Bestellung 12446 Stücke:
Lieferzeit 210-224 Tag (e)
5+12.84 EUR
10+ 12.22 EUR
25+ 9.83 EUR
100+ 8.81 EUR
250+ 8.5 EUR
450+ 7.59 EUR
Mindestbestellmenge: 5
FQA8N100ConsemiDescription: MOSFET N-CH 1000V 8A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Produkt ist nicht verfügbar
FQA8N100CON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA8N100CONSEMIDescription: ONSEMI - FQA8N100C - Leistungs-MOSFET, n-Kanal, 1 kV, 8 A, 1.2 ohm, TO-3PN, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1
Dauer-Drainstrom Id: 8
Qualifikation: -
MSL: -
Verlustleistung Pd: 225
Gate-Source-Schwellenspannung, max.: 5
Verlustleistung: 225
Bauform - Transistor: TO-3PN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 1.2
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 1.2
SVHC: Lead (10-Jun-2022)
Produkt ist nicht verfügbar
FQA8N100CONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 225W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQA8N100CON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA8N80
auf Bestellung 3600 Stücke:
Lieferzeit 21-28 Tag (e)
FQA8N80Fairchild SemiconductorDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.2A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 90616 Stücke:
Lieferzeit 21-28 Tag (e)
189+3.82 EUR
Mindestbestellmenge: 189
FQA8N80ConsemiDescription: MOSFET N-CH 800V 8.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4.2A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Produkt ist nicht verfügbar
FQA8N80C-F109ON SemiconductorTrans MOSFET N-CH 800V 8.4A 3-Pin(3+Tab) TO-3P Rail
Produkt ist nicht verfügbar
FQA8N80C_F109onsemiDescription: MOSFET N-CH 800V 8.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4.2A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Produkt ist nicht verfügbar
FQA8N90CFairchild SemiconductorDescription: MOSFET N-CH 900V 8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
auf Bestellung 2763 Stücke:
Lieferzeit 21-28 Tag (e)
166+4.71 EUR
Mindestbestellmenge: 166
FQA8N90ConsemiDescription: MOSFET N-CH 900V 8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Produkt ist nicht verfügbar
FQA8N90CON Semiconductor / FairchildMOSFET 900V N-Channel Q-FET
Produkt ist nicht verfügbar
FQA8N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA8N90C-F109ONSEMIDescription: ONSEMI - FQA8N90C-F109 - MOSFET'S - SINGLE
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA8N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
FQA8N90C-F109ONSEMIFQA8N90C-F109 THT N channel transistors
Produkt ist nicht verfügbar
FQA8N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA8N90C-F109onsemi / FairchildMOSFET 900V N-Channel
auf Bestellung 321 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.15 EUR
10+ 8.22 EUR
25+ 7.77 EUR
100+ 6.73 EUR
Mindestbestellmenge: 6
FQA8N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA8N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA8N90C-F109onsemiDescription: MOSFET N-CH 900V 8A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
auf Bestellung 156 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.16 EUR
10+ 6.85 EUR
Mindestbestellmenge: 4
FQA90N08
auf Bestellung 9900 Stücke:
Lieferzeit 21-28 Tag (e)
FQA90N08ON Semiconductor / FairchildMOSFET 80V N-Channel QFET
auf Bestellung 441 Stücke:
Lieferzeit 14-28 Tag (e)
FQA90N08onsemiDescription: MOSFET N-CH 80V 90A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Produkt ist nicht verfügbar
FQA90N08ON SemiconductorTrans MOSFET N-CH 80V 90A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA90N08onsemiDescription: MOSFET N-CH 80V 90A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
auf Bestellung 57 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.09 EUR
10+ 6.79 EUR
Mindestbestellmenge: 4
FQA90N08ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.5A; Idm: 360A; 214W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQA90N08ONSEMIDescription: ONSEMI - FQA90N08 - MOSFET'S - SINGLE
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA90N08ON SemiconductorTrans MOSFET N-CH 80V 90A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
37+4.32 EUR
43+ 3.52 EUR
100+ 2.55 EUR
250+ 2.13 EUR
Mindestbestellmenge: 37
FQA90N10V2Fairchild SemiconductorDescription: MOSFET N-CH 100V 105A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 52.5A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
auf Bestellung 1021 Stücke:
Lieferzeit 21-28 Tag (e)
75+9.72 EUR
Mindestbestellmenge: 75
FQA90N10V2onsemiDescription: MOSFET N-CH 100V 105A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 52.5A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Produkt ist nicht verfügbar
FQA90N15ON SemiconductorTrans MOSFET N-CH 150V 90A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
20+7.82 EUR
23+ 6.79 EUR
90+ 4.69 EUR
100+ 4.48 EUR
Mindestbestellmenge: 20
FQA90N15ON SemiconductorTrans MOSFET N-CH 150V 90A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
24+6.61 EUR
27+ 5.75 EUR
90+ 4.04 EUR
100+ 3.84 EUR
Mindestbestellmenge: 24
FQA90N15ONSEMIDescription: ONSEMI - FQA90N15 - Leistungs-MOSFET, n-Kanal, 150 V, 90 A, 0.018 ohm, TO-3P, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 150
Dauer-Drainstrom Id: 90
Qualifikation: -
Verlustleistung Pd: 375
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 375
Bauform - Transistor: TO-3P
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.018
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.018
SVHC: No SVHC (15-Jan-2018)
Produkt ist nicht verfügbar
FQA90N15ON SemiconductorTrans MOSFET N-CH 150V 90A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA90N15FairchildN-MOSFET 150V 90A 375W FQA90N15 Fairchild TFQA90n15
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+13.33 EUR
Mindestbestellmenge: 10
FQA90N15ON SemiconductorTrans MOSFET N-CH 150V 90A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
20+7.82 EUR
23+ 6.79 EUR
90+ 4.69 EUR
100+ 4.48 EUR
Mindestbestellmenge: 20
FQA90N15onsemi / FairchildMOSFET 150V N-Channel QFET
auf Bestellung 141 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.31 EUR
10+ 13.86 EUR
100+ 11.41 EUR
450+ 10.5 EUR
900+ 9.96 EUR
2700+ 9.46 EUR
5400+ 9.26 EUR
Mindestbestellmenge: 4
FQA90N15onsemiDescription: MOSFET N-CH 150V 90A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 45A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
auf Bestellung 210 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.46 EUR
10+ 14.79 EUR
100+ 12.12 EUR
Mindestbestellmenge: 2
FQA90N15ON SemiconductorTrans MOSFET N-CH 150V 90A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA90N15-F109ON Semiconductor
auf Bestellung 4950 Stücke:
Lieferzeit 21-28 Tag (e)
FQA90N15-F109ON Semiconductor / FairchildMOSFET 150V 90A N-Chan Power Trench
auf Bestellung 678 Stücke:
Lieferzeit 14-28 Tag (e)
FQA90N15-F109onsemiDescription: MOSFET N-CH 150V 90A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 45A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Produkt ist nicht verfügbar
FQA90N15-F109ON SemiconductorTrans MOSFET N-CH 150V 90A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA90N15-F109ONSEMIFQA90N15-F109 THT N channel transistors
Produkt ist nicht verfügbar
FQA90N15-F109ON SemiconductorTrans MOSFET N-CH 150V 90A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
35+4.5 EUR
36+ 4.19 EUR
37+ 3.96 EUR
100+ 3.62 EUR
450+ 3.33 EUR
Mindestbestellmenge: 35
FQA90N15-F109ONSEMIDescription: ONSEMI - FQA90N15-F109 - MOSFET'S - SINGLE
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA9N50Fairchild SemiconductorDescription: MOSFET N-CH 500V 9.6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Produkt ist nicht verfügbar
FQA9N50onsemiDescription: MOSFET N-CH 500V 9.6A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Produkt ist nicht verfügbar
FQA9N90Fairchild SemiconductorDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
FQA9N90
auf Bestellung 5620 Stücke:
Lieferzeit 21-28 Tag (e)
FQA9N90onsemi / FairchildMOSFET 900V N-Channel QFET
Produkt ist nicht verfügbar
FQA9N90-F109ON Semiconductor
auf Bestellung 4944 Stücke:
Lieferzeit 21-28 Tag (e)
FQA9N90-F109ON SemiconductorTrans MOSFET N-CH 900V 8.6A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA9N90-F109ON SemiconductorTrans MOSFET N-CH 900V 8.6A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA9N90-F109Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 398 Stücke:
Lieferzeit 21-28 Tag (e)
117+6.17 EUR
Mindestbestellmenge: 117
FQA9N90-F109ONSEMIDescription: ONSEMI - FQA9N90-F109 - MOSFET'S - SINGLE
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA9N90-F109onsemiDescription: MOSFET N-CH 900V 8.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.3A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
FQA9N90ConsemiDescription: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Produkt ist nicht verfügbar
FQA9N90CFSCTO-3 2010+
auf Bestellung 5800 Stücke:
Lieferzeit 21-28 Tag (e)
FQA9N90Consemi / FairchildMOSFET 900V N-Channel Q-FET
Produkt ist nicht verfügbar
FQA9N90CFAIRCHILD
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
FQA9N90CON SemiconductorTrans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
FQA9N90C (Transistor polar N-Kanal)
Produktcode: 48853		ONTransistoren > MOSFET N-CH
Uds,V: 900 V
Idd,A: 9 А
Rds(on), Ohm: 1,4 Ohm
ZCODE: 8541290090
Produkt ist nicht verfügbar
FQA9N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA9N90C-F109ONSEMIDescription: ONSEMI - FQA9N90C-F109 - Leistungs-MOSFET, n-Kanal, 900 V, 9 A, 1.12 ohm, TO-3PN, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 900
Dauer-Drainstrom Id: 9
Rds(on)-Messspannung Vgs: 10
MSL: -
Verlustleistung Pd: 280
Bauform - Transistor: TO-3PN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 1.12
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: Lead (17-Jan-2022)
Produkt ist nicht verfügbar
FQA9N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA9N90C-F109ON SemiconductorTrans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA9N90C-F109onsemiDescription: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Produkt ist nicht verfügbar
FQA9N90C_F109ON SemiconductorTrans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA9N90C_F109ON SemiconductorTrans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA9P25onsemi / FairchildMOSFET 250V P-Channel QFET
auf Bestellung 8448 Stücke:
Lieferzeit 14-28 Tag (e)
8+7.07 EUR
10+ 5.95 EUR
100+ 5.02 EUR
450+ 4.26 EUR
900+ 4.24 EUR
5400+ 4.06 EUR
Mindestbestellmenge: 8
FQA9P25onsemiDescription: MOSFET P-CH 250V 10.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
auf Bestellung 710 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.97 EUR
30+ 5.52 EUR
120+ 4.73 EUR
510+ 4.2 EUR
Mindestbestellmenge: 4
FQA9P25ON SemiconductorTrans MOSFET P-CH 250V 10.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQA9P25ONSEMIDescription: ONSEMI - FQA9P25 - Leistungs-MOSFET, p-Kanal, 250 V, 10.5 A, 0.48 ohm, TO-3PN
Drain-Source-Spannung Vds: 250
Dauer-Drainstrom Id: 10.5
Qualifikation: -
Verlustleistung Pd: 150
Gate-Source-Schwellenspannung, max.: 5
Verlustleistung: 150
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3
Produktpalette: QFET
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.48
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.48
SVHC: Lead (17-Jan-2022)
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
FQA9P25ON SemiconductorTrans MOSFET P-CH 250V 10.5A 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
FQAF10N80onsemiDescription: MOSFET N-CH 800V 6.7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.35A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
FQAF10N80Fairchild SemiconductorDescription: MOSFET N-CH 800V 6.7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.35A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 7549 Stücke:
Lieferzeit 21-28 Tag (e)
166+4.35 EUR
Mindestbestellmenge: 166
FQAF11N40onsemiDescription: MOSFET N-CH 400V 8.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.4A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
FQAF11N90ON SemiconductorTrans MOSFET N-CH 900V 7.2A 3-Pin(3+Tab) TO-3PF Rail
Produkt ist nicht verfügbar
FQAF11N90onsemiDescription: MOSFET N-CH 900V 7.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 3.6A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
FQAF11N90FAIRCHILD
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
FQAF11N90CON SemiconductorTrans MOSFET N-CH 900V 7A 3-Pin(3+Tab) TO-3PF Tube
Produkt ist nicht verfügbar
FQAF11N90ConsemiDescription: MOSFET N-CH 900V 7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
FQAF11N90CONSEMIDescription: ONSEMI - FQAF11N90C - Leistungs-MOSFET, n-Kanal, 900 V, 7 A, 0.91 ohm, TO-3PF
Drain-Source-Spannung Vds: 900
Dauer-Drainstrom Id: 7
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 120
Bauform - Transistor: TO-3PF
Anzahl der Pins: 3
Produktpalette: QFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.91
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: Lead (17-Jan-2022)
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
FQAF11N90CON SemiconductorTrans MOSFET N-CH 900V 7A 3-Pin(3+Tab) TO-3PF Tube
Produkt ist nicht verfügbar
FQAF11N90Consemi / FairchildMOSFET N-CH/900V/7A/A.QFET
auf Bestellung 324 Stücke:
Lieferzeit 196-210 Tag (e)
5+11.78 EUR
10+ 9.88 EUR
25+ 9.33 EUR
100+ 8.01 EUR
250+ 7.54 EUR
360+ 7.1 EUR
Mindestbestellmenge: 5
FQAF11N90CON SemiconductorTrans MOSFET N-CH 900V 7A 3-Pin(3+Tab) TO-3PF Tube
Produkt ist nicht verfügbar
FQAF12N60onsemiDescription: MOSFET N-CH 600V 7.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.9A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
FQAF12P20Fairchild SemiconductorDescription: MOSFET P-CH 200V 8.6A TO3PF
Produkt ist nicht verfügbar
FQAF13N80onsemiDescription: MOSFET N-CH 800V 8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
FQAF13N80ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-3PF Tube
Produkt ist nicht verfügbar
FQAF13N80ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 120W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 120W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQAF13N80onsemi / FairchildMOSFET 800V N-Channel QFET
auf Bestellung 358 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.35 EUR
10+ 12.82 EUR
25+ 12.4 EUR
100+ 10.5 EUR
Mindestbestellmenge: 4
FQAF13N80onsemiDescription: MOSFET N-CH 800V 8A TO3PF
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
105+6.89 EUR
Mindestbestellmenge: 105
FQAF13N80ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-3PF Tube
Produkt ist nicht verfügbar
FQAF13N80ONSEMIDescription: ONSEMI - FQAF13N80 - Leistungs-MOSFET, n-Kanal, 800 V, 8 A, 0.58 ohm, TO-3PF
Drain-Source-Spannung Vds: 800
Dauer-Drainstrom Id: 8
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 120
Bauform - Transistor: TO-3PF
Anzahl der Pins: 3
Produktpalette: QFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.58
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: Lead (17-Jan-2022)
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
FQAF14N30onsemiDescription: MOSFET N-CH 300V 11.4A TO3PF
Produkt ist nicht verfügbar
FQAF14N30Fairchild SemiconductorDescription: MOSFET N-CH 300V 11.4A TO3PF
Produkt ist nicht verfügbar
FQAF15N70Fairchild SemiconductorDescription: MOSFET N-CH 700V 9.5A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 295 Stücke:
Lieferzeit 21-28 Tag (e)
110+6.54 EUR
Mindestbestellmenge: 110
FQAF15N70ON Semiconductor / FairchildMOSFET 700V N-Channel QFET
Produkt ist nicht verfügbar
FQAF16N25Fairchild SemiconductorDescription: MOSFET N-CH 250V 12.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 682 Stücke:
Lieferzeit 21-28 Tag (e)
325+2.26 EUR
Mindestbestellmenge: 325
FQAF16N25CFairchild SemiconductorDescription: MOSFET N-CH 250V 11.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.7A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
auf Bestellung 360 Stücke:
Lieferzeit 21-28 Tag (e)
360+2.26 EUR
Mindestbestellmenge: 360
FQAF16N25ConsemiDescription: MOSFET N-CH 250V 11.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.7A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Produkt ist nicht verfügbar
FQAF16N50ON SemiconductorTrans MOSFET N-CH 500V 11.3A 3-Pin(3+Tab) TO-3PF Tube
Produkt ist nicht verfügbar
FQAF16N50ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Technology: QFET®
Mounting: THT
Power dissipation: 110W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 7.15A
On-state resistance: 0.32Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 75nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQAF16N50onsemi / FairchildMOSFET 500V N-Channel QFET
auf Bestellung 333 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.94 EUR
10+ 12.53 EUR
25+ 11.88 EUR
100+ 9.93 EUR
Mindestbestellmenge: 4
FQAF16N50ON SemiconductorTrans MOSFET N-CH 500V 11.3A 3-Pin(3+Tab) TO-3PF Tube
Produkt ist nicht verfügbar
FQAF16N50Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 5.65A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 8060 Stücke:
Lieferzeit 21-28 Tag (e)
108+6.7 EUR
Mindestbestellmenge: 108
FQAF16N50ONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Technology: QFET®
Mounting: THT
Power dissipation: 110W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 7.15A
On-state resistance: 0.32Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 75nC
Produkt ist nicht verfügbar
FQAF16N50FairchildN-MOSFET 500V 11.3A 110W FQAF16N50 Fairchild TFQAF16n50
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+4.76 EUR
Mindestbestellmenge: 10
FQAF17N40onsemiDescription: MOSFET N-CH 400V 12.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 6.1A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
FQAF17P10Fairchild SemiconductorDescription: MOSFET P-CH 100V 12.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 2972 Stücke:
Lieferzeit 21-28 Tag (e)
307+2.32 EUR
Mindestbestellmenge: 307
FQAF19N20Fairchild SemiconductorDescription: MOSFET N-CH 200V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 684 Stücke:
Lieferzeit 21-28 Tag (e)
360+1.97 EUR
Mindestbestellmenge: 360
FQAF19N20LFairchild SemiconductorDescription: MOSFET N-CH 200V 16A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 8A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1659 Stücke:
Lieferzeit 21-28 Tag (e)
275+2.59 EUR
Mindestbestellmenge: 275
FQAF19N60Fairchild SemiconductorDescription: MOSFET N-CH 600V 11.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 681 Stücke:
Lieferzeit 21-28 Tag (e)
114+6.36 EUR
Mindestbestellmenge: 114
FQAF19N60ON SemiconductorTrans MOSFET N-CH 600V 11.2A 3-Pin(3+Tab) TO-3PF Rail
Produkt ist nicht verfügbar
FQAF22P10onsemiDescription: MOSFET P-CH 100V 16.6A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
FQAF27N25ONSEMIDescription: ONSEMI - FQAF27N25 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)
FQAF27N25Fairchild SemiconductorDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.5A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 1440 Stücke:
Lieferzeit 21-28 Tag (e)
241+3.25 EUR
Mindestbestellmenge: 241
FQAF28N15Fairchild SemiconductorDescription: MOSFET N-CH 150V 22A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 473 Stücke:
Lieferzeit 21-28 Tag (e)
346+2.09 EUR
Mindestbestellmenge: 346
FQAF33N10Fairchild SemiconductorDescription: MOSFET N-CH 100V 25.8A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 12.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 1396 Stücke:
Lieferzeit 21-28 Tag (e)
386+1.87 EUR
Mindestbestellmenge: 386
FQAF33N10LonsemiDescription: MOSFET N-CH 100V 25.8A TO3PF
Produkt ist nicht verfügbar
FQAF34N25Fairchild SemiconductorDescription: MOSFET N-CH 250V 21.7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10.9A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 610 Stücke:
Lieferzeit 21-28 Tag (e)
173+4.18 EUR
Mindestbestellmenge: 173
FQAF40N25Fairchild SemiconductorDescription: MOSFET N-CH 250V 24A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12A, 10V
Power Dissipation (Max): 108W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 2593 Stücke:
Lieferzeit 21-28 Tag (e)
93+7.75 EUR
Mindestbestellmenge: 93
FQAF44N08Rochester Electronics, LLCDescription: N-CHANNEL POWER MOSFET
auf Bestellung 720 Stücke:
Lieferzeit 21-28 Tag (e)
FQAF44N08ON SemiconductorDescription: MOSFET N-CH 80V 35.6A TO-3PF
Produkt ist nicht verfügbar
FQAF44N10Fairchild SemiconductorDescription: MOSFET N-CH 100V 33A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 16.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 1044 Stücke:
Lieferzeit 21-28 Tag (e)
267+2.68 EUR
Mindestbestellmenge: 267
FQAF47P06onsemiDescription: MOSFET P-CH 60V 38A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 19A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
FQAF58N08onsemi / FairchildMOSFET 80V N-Channel QFET
Produkt ist nicht verfügbar
FQAF58N08onsemiDescription: MOSFET N-CH 80V 44A TO3PF
Produkt ist nicht verfügbar
FQAF5N90onsemiDescription: MOSFET N-CH 900V 4.1A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.05A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
FQAF65N06onsemiDescription: MOSFET N-CH 60V 49A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 24.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Produkt ist nicht verfügbar
FQAF6N80Fairchild SemiconductorDescription: MOSFET N-CH 800V 4.4A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.2A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 892 Stücke:
Lieferzeit 21-28 Tag (e)
173+4.18 EUR
Mindestbestellmenge: 173
FQAF6N90Fairchild SemiconductorDescription: MOSFET N-CH 900V 4.5A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 2.3A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
auf Bestellung 1785 Stücke:
Lieferzeit 21-28 Tag (e)
222+3.24 EUR
Mindestbestellmenge: 222
FQAF70N15Fairchild SemiconductorDescription: MOSFET N-CH 150V 44A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 925 Stücke:
Lieferzeit 21-28 Tag (e)
117+6.17 EUR
Mindestbestellmenge: 117
FQAF70N15onsemiDescription: MOSFET N-CH 150V 44A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar
FQAF7N80onsemiDescription: MOSFET N-CH 800V 5A TO3PF
Produkt ist nicht verfügbar
FQAF7N90onsemiDescription: MOSFET N-CH 900V 5.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.6A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Produkt ist nicht verfügbar
FQAF7N90Fairchild SemiconductorDescription: MOSFET N-CH 900V 5.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.6A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
auf Bestellung 877 Stücke:
Lieferzeit 21-28 Tag (e)
189+3.82 EUR
Mindestbestellmenge: 189
FQAF8N80onsemiDescription: MOSFET N-CH 800V 5.9A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.95A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Produkt ist nicht verfügbar
FQAF8N80Fairchild SemiconductorDescription: MOSFET N-CH 800V 5.9A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.95A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 557 Stücke:
Lieferzeit 21-28 Tag (e)
166+4.35 EUR
Mindestbestellmenge: 166
FQAF90N08Fairchild SemiconductorDescription: MOSFET N-CH 80V 56A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
auf Bestellung 340 Stücke:
Lieferzeit 21-28 Tag (e)
117+6.32 EUR
Mindestbestellmenge: 117
FQAF9N50Fairchild SemiconductorDescription: MOSFET N-CH 500V 7.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 3.6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 673 Stücke:
Lieferzeit 21-28 Tag (e)
275+2.62 EUR
Mindestbestellmenge: 275
FQAF9N50onsemi / FairchildMOSFET 500V N-Channel QFET
Produkt ist nicht verfügbar
FQAF9P25Fairchild SemiconductorDescription: MOSFET P-CH 250V 7.1A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.55A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
auf Bestellung 590 Stücke:
Lieferzeit 21-28 Tag (e)
267+2.68 EUR
Mindestbestellmenge: 267