IPP048N04NGXKSA1 Infineon Technologies
auf Bestellung 6500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 1.01 EUR |
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Technische Details IPP048N04NGXKSA1 Infineon Technologies
Description: MOSFET N-CH 40V 70A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 70A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: PG-TO220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V.
Weitere Produktangebote IPP048N04NGXKSA1 nach Preis ab 1.1 EUR bis 2.53 EUR
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IPP048N04NGXKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 492 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP048N04NGXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP048N04NGXKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3 |
auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP048N04NGXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP048N04NGXKSA1 Produktcode: 202354
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IPP048N04NGXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP048N04NGXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3 Drain-source voltage: 40V Drain current: 70A Case: PG-TO220-3 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 4.8mΩ Gate-source voltage: ±20V Power dissipation: 79W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPP048N04NGXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 70A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 70A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
Produkt ist nicht verfügbar |
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IPP048N04NGXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3 Drain-source voltage: 40V Drain current: 70A Case: PG-TO220-3 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 4.8mΩ Gate-source voltage: ±20V Power dissipation: 79W |
Produkt ist nicht verfügbar |