Technische Details JAN2N3811 MOT
Description: TRANS 2PNP 60V 0.05A TO78, Part Status: Obsolete, Supplier Device Package: TO-78-6, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 50mA, Power - Max: 350mW, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Through Hole, Package / Case: TO-78-6 Metal Can, Packaging: Bulk.
Weitere Produktangebote JAN2N3811
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JAN2N3811 | Microsemi Corporation |
Description: TRANS 2PNP 60V 0.05A TO78Part Status: Obsolete Supplier Device Package: TO-78-6 DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 50mA Power - Max: 350mW Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN2N3811 |
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Hersteller: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A TO78
Part Status: Obsolete
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Description: TRANS 2PNP 60V 0.05A TO78
Part Status: Obsolete
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

