Produkte > RENESAS ELECTRONICS CORPORATION > Alle Produkte des Herstellers RENESAS ELECTRONICS CORPORATION (29063) > Seite 198 nach 485
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ISL78083ARZ-T7A | Renesas Electronics Corporation |
 Description: AUTOMOTIVE CAMERA PMIC WITH 3 SYPackaging: Tape & Reel (TR) Package / Case: 24-TFQFN Exposed Pad Voltage - Output: 3.3V ~ 5.05V, 1V ~ 3.3V, 1V ~ 3.3V, 2.8V ~ 3.4V Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 4 Voltage - Input: 4V ~ 42V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Camera Supplier Device Package: 24-SCQFN (4x4) Grade: Automotive Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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ISL78083ARZ-T7A | Renesas Electronics Corporation |
Description: AUTOMOTIVE CAMERA PMIC WITH 3 SY Packaging: Cut Tape (CT) Package / Case: 24-TFQFN Exposed Pad Voltage - Output: 3.3V ~ 5.05V, 1V ~ 3.3V, 1V ~ 3.3V, 2.8V ~ 3.4V Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 4 Voltage - Input: 4V ~ 42V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Camera Supplier Device Package: 24-SCQFN (4x4) Grade: Automotive Part Status: Active |
auf Bestellung 63 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3585-T1B-A | Renesas Electronics Corporation |
Description: RF TRANS NPN 10V 10GHZ SOT-23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 200mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Supplier Device Package: SOT23-3 (TO-236) Part Status: Obsolete |
auf Bestellung 431384 Stücke: Lieferzeit 10-14 Tag (e) |
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NP80N04MLG-S18-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 80A TO220 Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 6697 Stücke: Lieferzeit 10-14 Tag (e) |
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R1LV0816ASA-7SI#B0 | Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 48TSOP I DigiKey Programmable: Not Verified Memory Organization: 1M x 8, 512K x 16 Access Time: 70 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Supplier Device Package: 48-TSOP I Memory Format: SRAM Technology: SRAM Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 8Mbit Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Packaging: Bulk |
auf Bestellung 396 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5752-T1-A | Renesas Electronics Corporation |
Description: RF TRANS NPN 6V 12GHZ SOT-343 Packaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Supplier Device Package: SOT-343 |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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ICL7663SACPA | Renesas Electronics Corporation |
Description: IC REG LINEAR POS ADJ 40MA 8PDIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Adjustable Mounting Type: Through Hole Current - Output: 40mA, 40mA Operating Temperature: 0°C ~ 70°C Output Configuration: Positive Current - Quiescent (Iq): 10 µA Voltage - Input (Max): 16V Number of Regulators: 2 Supplier Device Package: 8-PDIP Voltage - Output (Max): 16V Voltage - Output (Min/Fixed): 1.3V Control Features: Enable Protection Features: Over Current Current - Supply (Max): 12 µA |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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R1LV0816ASD-5SI#B0 | Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 52TSOP II DigiKey Programmable: Not Verified Memory Organization: 1M x 8, 512K x 16 Access Time: 55 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 55ns Supplier Device Package: 52-TSOP II Memory Format: SRAM Technology: SRAM Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 8Mbit Mounting Type: Surface Mount Package / Case: 52-TFSOP (0.350", 8.89mm Width) Packaging: Tray |
auf Bestellung 928 Stücke: Lieferzeit 10-14 Tag (e) |
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R1LV0816ASB-7SI#B0 | Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 44TSOP II DigiKey Programmable: Not Verified Memory Organization: 512K x 16 Access Time: 70 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Supplier Device Package: 44-TSOP II Memory Format: SRAM Technology: SRAM Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 8Mbit Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Packaging: Bulk |
auf Bestellung 289 Stücke: Lieferzeit 10-14 Tag (e) |
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HD6417707RF60A | Renesas Electronics Corporation |
Description: IC MCU 32-BIT FLASH Packaging: Bulk Mounting Type: Surface Mount Program Memory Type: FLASH Core Size: 32-Bit DigiKey Programmable: Not Verified |
auf Bestellung 1017 Stücke: Lieferzeit 10-14 Tag (e) |
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NP80N04NHE-S18-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 80A TO262 Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Part Status: Obsolete Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
auf Bestellung 2250 Stücke: Lieferzeit 10-14 Tag (e) |
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R1LP0408DSB-5SR#B0 | Renesas Electronics Corporation |
Description: IC SRAM 4MBIT PARALLEL 32TSOP II Memory Organization: 512K x 8 Access Time: 55 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 55ns Part Status: Obsolete Supplier Device Package: 32-TSOP II Memory Format: SRAM Technology: SRAM Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 32-SOIC (0.400", 10.16mm Width) Packaging: Tray DigiKey Programmable: Not Verified |
auf Bestellung 1350 Stücke: Lieferzeit 10-14 Tag (e) |
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R1WV3216RBG-7SR#B0 | Renesas Electronics Corporation |
Description: IC SRAM 32MBIT PARALLEL 48TFBGA DigiKey Programmable: Not Verified Memory Organization: 2M x 16 Access Time: 70 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Supplier Device Package: 48-TFBGA (7.5x8.5) Memory Format: SRAM Technology: SRAM Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 32Mbit Mounting Type: Surface Mount Package / Case: 48-TFBGA Packaging: Tray |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK1580-T1-A | Renesas Electronics Corporation |
Description: MOSFET N-CH 16V 100MA SC70-3 SSP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 1mA, 4V Vgs(th) (Max) @ Id: 1.6V @ 10µA Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold Part Status: Obsolete Drain to Source Voltage (Vdss): 16 V Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 3 V |
auf Bestellung 19993 Stücke: Lieferzeit 10-14 Tag (e) |
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PS7804-1A-A | Renesas Electronics Corporation |
Description: SSR RELAY SPST-NO 400MA 0-60V Packaging: Strip Package / Case: 4-SMD (0.165", 4.20mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.1VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 400 mA Supplier Device Package: 4-Ultra Small Flatlead Part Status: Obsolete Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
auf Bestellung 63 Stücke: Lieferzeit 10-14 Tag (e) |
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HD6473837H | Renesas Electronics Corporation |
Description: IC MCU 8BIT 60KB OTP 100QFP Packaging: Tray Package / Case: 100-BFQFP Mounting Type: Surface Mount Speed: 5MHz Program Memory Size: 60KB (60K x 8) RAM Size: 2K x 8 Operating Temperature: -20°C ~ 75°C Oscillator Type: Internal Program Memory Type: OTP Core Processor: H8/300L Data Converters: A/D 12x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: SCI Peripherals: LCD, PWM Supplier Device Package: 100-QFP (14x14) Part Status: Obsolete Number of I/O: 84 DigiKey Programmable: Not Verified |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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HD6473834UH | Renesas Electronics Corporation |
Description: IC MCU 8BIT 32KB OTP 100QFP Packaging: Tray Package / Case: 100-BFQFP Mounting Type: Surface Mount Speed: 5MHz Program Memory Size: 32KB (32K x 8) RAM Size: 1K x 8 Operating Temperature: -20°C ~ 75°C Oscillator Type: Internal Program Memory Type: OTP Core Processor: H8/300L Data Converters: A/D 12x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: SCI Peripherals: LCD, PWM Supplier Device Package: 100-QFP (14x14) Part Status: Obsolete Number of I/O: 71 DigiKey Programmable: Not Verified |
auf Bestellung 236 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK60S5DPK-M0#T0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 20A TO3PSG Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V Supplier Device Package: TO-3PSG Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 69897 Stücke: Lieferzeit 10-14 Tag (e) |
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NP80N03MLE-S18-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 80A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3634-AZ | Renesas Electronics Corporation |
Description: MOSFET N-CH 200V 6A TO251 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-251 Part Status: Obsolete Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
auf Bestellung 2971 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3054-T1-A | Renesas Electronics Corporation |
Description: MOSFET N-CH 50V 100MA SC70-3 SSP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold Part Status: Obsolete Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 3 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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R5F2M122ANDD#U0 | Renesas Electronics Corporation |
Description: IC MCU 16BIT 8KB FLASH 20DIP DigiKey Programmable: Not Verified Number of I/O: 17 Supplier Device Package: 20-PDIP Peripherals: POR, PWM, Voltage Detect, WDT Connectivity: UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 6x10b Core Processor: R8C Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -20°C ~ 85°C (TA) RAM Size: 512 x 8 Program Memory Size: 8KB (8K x 8) Speed: 20MHz Mounting Type: Through Hole Package / Case: 20-DIP (0.300", 7.62mm) Packaging: Tray |
auf Bestellung 163 Stücke: Lieferzeit 10-14 Tag (e) |
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UPD720102F1-CA7-A | Renesas Electronics Corporation |
Description: USB BUS CONTROLLER DigiKey Programmable: Not Verified Supplier Device Package: 121-FBGA (8x8) Standards: USB 2.0 Protocol: USB Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -20°C ~ 70°C Interface: PCI Function: Controller Package / Case: 121-VFBGA Packaging: Tray |
auf Bestellung 3322 Stücke: Lieferzeit 10-14 Tag (e) |
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PS2561AL2-1-E3-A | Renesas Electronics Corporation |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD Packaging: Bulk Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 70V Rise / Fall Time (Typ): 3µs, 5µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
auf Bestellung 384259 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK60S5DPE-00#J3 | Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 20A 4LDPAK Packaging: Bulk Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V Power Dissipation (Max): 125W (Tc) Supplier Device Package: LDPAK Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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R1EX24016ATAS0A#S0 | Renesas Electronics Corporation |
Description: IC EEPROM 16KBIT I2C 8TSSOP DigiKey Programmable: Not Verified Memory Organization: 2K x 8 Access Time: 900 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-TSSOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK60S4DPP-E0#T2 | Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 16A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8A, 10V Power Dissipation (Max): 29.9W (Tc) Supplier Device Package: TO-220FP Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 25 V |
auf Bestellung 114548 Stücke: Lieferzeit 10-14 Tag (e) |
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UPA2802T1L-E2-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 20V 18A 8DFN Packaging: Bulk Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-DFN3333 (3.3x3.3) Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V |
auf Bestellung 210000 Stücke: Lieferzeit 10-14 Tag (e) |
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UPA2450BTL-E1-A | Renesas Electronics Corporation |
Description: MOSFET 2N-CH 20V 8.6A 6HWSON Packaging: Bulk Package / Case: 6-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.6A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: 6-HWSON |
auf Bestellung 527490 Stücke: Lieferzeit 10-14 Tag (e) |
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R1LP0408DSB-7SI#B0 | Renesas Electronics Corporation |
Description: IC SRAM 4MBIT PARALLEL 32TSOP II Packaging: Tray Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM Memory Format: SRAM Supplier Device Package: 32-TSOP II Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2272 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5750-T1-A | Renesas Electronics Corporation |
Description: RF TRANS NPN 6V 15GHZ SOT-343 Packaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 15dB Power - Max: 200mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Supplier Device Package: SOT-343 |
auf Bestellung 129000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR5AM-12LB#B01 | Renesas Electronics Corporation |
Description: TRIAC 600V 5A TO220-3 Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 5 A Supplier Device Package: TO-220-3 Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz Current - Gate Trigger (Igt) (Max): 20 mA Configuration: Single Triac Type: Standard Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bag |
auf Bestellung 785 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR10CM-12LA#B00 | Renesas Electronics Corporation |
Description: TRIAC 600V 10A TO220-3 Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Current - Gate Trigger (Igt) (Max): 30 mA Configuration: Single Triac Type: Standard Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 10 A Supplier Device Package: TO-220-3 Voltage - Gate Trigger (Vgt) (Max): 1.5 V |
auf Bestellung 10966 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK60S3DPP-E0#T2 | Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 440mOhm @ 6A, 10V Power Dissipation (Max): 27.7W (Tc) Supplier Device Package: TO-220FP Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V |
auf Bestellung 129813 Stücke: Lieferzeit 10-14 Tag (e) |
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HD6473726HV | Renesas Electronics Corporation |
Description: IC MCU 8BIT 48KB OTP 80QFP DigiKey Programmable: Not Verified Number of I/O: 60 Supplier Device Package: 80-QFP (14x14) Peripherals: PWM, VFD Connectivity: SCI Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x8b Core Processor: H8/300L Program Memory Type: OTP Oscillator Type: External Operating Temperature: -20°C ~ 75°C (TA) RAM Size: 1K x 8 Program Memory Size: 48KB (48K x 8) Speed: 5MHz Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Tray |
auf Bestellung 145 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR10CM-12LB#B01 | Renesas Electronics Corporation |
Description: TRIAC 600V 10A Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 10 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Current - Gate Trigger (Igt) (Max): 30 mA Configuration: Single Triac Type: Standard Packaging: Tube |
auf Bestellung 26524 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK4080-ZK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 48A TO252 Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 12 V Drain to Source Voltage (Vdss): 30 V Part Status: Obsolete Supplier Device Package: TO-252 (MP-3Z) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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UPD78F9222CS-CAC-A | Renesas Electronics Corporation |
Description: IC MCU 8BIT 4KB FLASH Packaging: Tray Package / Case: 20-DIP (0.300", 7.62mm) Mounting Type: Through Hole Speed: 10MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: 78K0S Data Converters: A/D 4x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V Connectivity: LINbus, UART/USART Peripherals: LVD, POR, PWM, WDT Part Status: Obsolete Number of I/O: 15 DigiKey Programmable: Not Verified |
auf Bestellung 145898 Stücke: Lieferzeit 10-14 Tag (e) |
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R1LV0808ASB-7SI#S0 | Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 44TSOP II DigiKey Programmable: Not Verified Memory Organization: 1M x 8 Access Time: 70 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Supplier Device Package: 44-TSOP II Memory Format: SRAM Technology: SRAM Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 8Mbit Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Packaging: Bulk |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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R1LP0408DSB-7SR#B0 | Renesas Electronics Corporation |
Description: IC SRAM 4MBIT PARALLEL 32TSOP II Packaging: Tray Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM Memory Format: SRAM Supplier Device Package: 32-TSOP II Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4095-T1-A | Renesas Electronics Corporation |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12dB Power - Max: 200mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Supplier Device Package: SOT-143 Part Status: Obsolete |
auf Bestellung 188236 Stücke: Lieferzeit 10-14 Tag (e) |
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R1LP0408DSB-7SI#S0 | Renesas Electronics Corporation |
Description: IC SRAM 4MBIT PARALLEL 32TSOP II Packaging: Bulk Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM Memory Format: SRAM Supplier Device Package: 32-TSOP II Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2941 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3107-T1-A | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 100MA SC75-3 USM Packaging: Bulk Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 10µA Supplier Device Package: SC-75-3, USM Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V |
auf Bestellung 3202 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL6520BCBZ-T | Renesas Electronics Corporation |
Description: IC REG CTRLR BUCK 8SOIC Number of Outputs: 1 Part Status: Obsolete Clock Sync: No Duty Cycle (Max): 100% Output Phases: 1 Control Features: Enable, Phase Control Synchronous Rectifier: Yes Supplier Device Package: 8-SOIC Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Topology: Buck Frequency - Switching: 300kHz Output Configuration: Positive Operating Temperature: 0°C ~ 70°C (TA) Function: Step-Down Mounting Type: Surface Mount Output Type: Transistor Driver Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK2090-T2-A | Renesas Electronics Corporation |
Description: MOSFET N-CH 50V 100MA SC70-3 SSP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold Part Status: Obsolete Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 3 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK0301DPB-00#J0 | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 60A LFPAK Packaging: Bulk Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Power Dissipation (Max): 65W (Tc) Supplier Device Package: LFPAK Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V |
auf Bestellung 19786 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK2858-T1-A | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 100MA SC70-3 SSP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 10µA Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V |
auf Bestellung 38000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3814-AZ | Renesas Electronics Corporation |
Description: MOSFET N-CH 60V 60A TO251 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V Power Dissipation (Max): 1W (Ta), 84W (Tc) Supplier Device Package: TO-251 Part Status: Obsolete Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V |
auf Bestellung 6430 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3659-AZ | Renesas Electronics Corporation |
Description: MOSFET N-CH 20V 65A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V |
auf Bestellung 979 Stücke: Lieferzeit 10-14 Tag (e) |
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R5F2M112ANDD#U0 | Renesas Electronics Corporation |
Description: IC MCU 16BIT 8KB FLASH 14DIP Packaging: Tray Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Speed: 20MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -20°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: R8C Data Converters: A/D 5x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: UART/USART Peripherals: POR, PWM, Voltage Detect, WDT Supplier Device Package: 14-PDIP Number of I/O: 11 DigiKey Programmable: Not Verified |
auf Bestellung 4371 Stücke: Lieferzeit 10-14 Tag (e) |
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| UPA2560T1H-T1-AT | Renesas Electronics Corporation |
Description: MOSFET 2N-CH 30V 4.5A 8VSOF Supplier Device Package: 8-VSOF Vgs(th) (Max) @ Id: 2.5V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 30V Power - Max: 2.2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Bulk |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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R1EX24016ASAS0A#U0 | Renesas Electronics Corporation |
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP DigiKey Programmable: Not Verified Memory Organization: 2K x 8 Access Time: 900 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 15294 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK60S5DPP-E0#T2 | Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 20A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V Power Dissipation (Max): 33.7W (Tc) Supplier Device Package: TO-220FP Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 226 Stücke: Lieferzeit 10-14 Tag (e) |
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R1LV0816ASB-7SI#S0 | Renesas Electronics Corporation |
Description: IC SRAM 8MBIT PARALLEL 44TSOP II DigiKey Programmable: Not Verified Memory Organization: 512K x 16 Access Time: 70 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Supplier Device Package: 44-TSOP II Memory Format: SRAM Technology: SRAM Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 8Mbit Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Packaging: Bulk |
auf Bestellung 2704 Stücke: Lieferzeit 10-14 Tag (e) |
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RJK6026DPP-E0#T2 | Renesas Electronics Corporation |
Description: MOSFET N-CH 600V 5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V Power Dissipation (Max): 28.5W (Tc) Supplier Device Package: TO-220FP Part Status: Obsolete Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
auf Bestellung 40100 Stücke: Lieferzeit 10-14 Tag (e) |
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HD6417020SVX12I | Renesas Electronics Corporation |
Description: IC MCU 32BIT ROMLESS 100TQFP Packaging: Tray Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 12.5MHz RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Oscillator Type: Internal Program Memory Type: ROMless Core Processor: SH-1 Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, SCI Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Part Status: Obsolete Number of I/O: 32 DigiKey Programmable: Not Verified |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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NP80N04MHE-S18-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 80A TO220 Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 227950 Stücke: Lieferzeit 10-14 Tag (e) |
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HD6417032VF12V | Renesas Electronics Corporation |
Description: IC MCU 32BIT ROMLESS 112QFP Packaging: Tray Package / Case: 112-BQFP Mounting Type: Surface Mount Speed: 12.5MHz RAM Size: 8K x 8 Operating Temperature: -20°C ~ 75°C (TA) Oscillator Type: Internal Program Memory Type: ROMless Core Processor: SH-1 Data Converters: A/D 8x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: EBI/EMI, SCI Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 112-QFP (20x20) Part Status: Obsolete Number of I/O: 32 DigiKey Programmable: Not Verified |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5751-T2-A | Renesas Electronics Corporation |
Description: RF TRANS NPN 6V 15GHZ SOT-343F Packaging: Bulk Package / Case: SOT-343F Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 16dB Power - Max: 205mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Supplier Device Package: SOT-343F |
auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK1658-T1-A | Renesas Electronics Corporation |
Description: MOSFET N-CH 30V 100MA SC70-3 SSP Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 3 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISL78083ARZ-T7A |
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Hersteller: Renesas Electronics Corporation
Description: AUTOMOTIVE CAMERA PMIC WITH 3 SY
Packaging: Tape & Reel (TR)
Package / Case: 24-TFQFN Exposed Pad
Voltage - Output: 3.3V ~ 5.05V, 1V ~ 3.3V, 1V ~ 3.3V, 2.8V ~ 3.4V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 4
Voltage - Input: 4V ~ 42V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Camera
Supplier Device Package: 24-SCQFN (4x4)
Grade: Automotive
Part Status: Active
Description: AUTOMOTIVE CAMERA PMIC WITH 3 SY
Packaging: Tape & Reel (TR)
Package / Case: 24-TFQFN Exposed Pad
Voltage - Output: 3.3V ~ 5.05V, 1V ~ 3.3V, 1V ~ 3.3V, 2.8V ~ 3.4V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 4
Voltage - Input: 4V ~ 42V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Camera
Supplier Device Package: 24-SCQFN (4x4)
Grade: Automotive
Part Status: Active
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Mindestbestellmenge: 250 Stücke
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| ISL78083ARZ-T7A |
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Hersteller: Renesas Electronics Corporation
Description: AUTOMOTIVE CAMERA PMIC WITH 3 SY
Packaging: Cut Tape (CT)
Package / Case: 24-TFQFN Exposed Pad
Voltage - Output: 3.3V ~ 5.05V, 1V ~ 3.3V, 1V ~ 3.3V, 2.8V ~ 3.4V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 4
Voltage - Input: 4V ~ 42V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Camera
Supplier Device Package: 24-SCQFN (4x4)
Grade: Automotive
Part Status: Active
Description: AUTOMOTIVE CAMERA PMIC WITH 3 SY
Packaging: Cut Tape (CT)
Package / Case: 24-TFQFN Exposed Pad
Voltage - Output: 3.3V ~ 5.05V, 1V ~ 3.3V, 1V ~ 3.3V, 2.8V ~ 3.4V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 4
Voltage - Input: 4V ~ 42V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Camera
Supplier Device Package: 24-SCQFN (4x4)
Grade: Automotive
Part Status: Active
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.36 EUR |
| 10+ | 7.65 EUR |
| 25+ | 7 EUR |
| 2SC3585-T1B-A |
|
Hersteller: Renesas Electronics Corporation
Description: RF TRANS NPN 10V 10GHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SOT23-3 (TO-236)
Part Status: Obsolete
Description: RF TRANS NPN 10V 10GHZ SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SOT23-3 (TO-236)
Part Status: Obsolete
auf Bestellung 431384 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 568+ | 0.98 EUR |
| NP80N04MLG-S18-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 80A TO220
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 80A TO220
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6697 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 151+ | 3.87 EUR |
| R1LV0816ASA-7SI#B0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8, 512K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Bulk
Description: IC SRAM 8MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8, 512K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Bulk
auf Bestellung 396 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 50.69 EUR |
| 2SC5752-T1-A |
|
Hersteller: Renesas Electronics Corporation
Description: RF TRANS NPN 6V 12GHZ SOT-343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343
Description: RF TRANS NPN 6V 12GHZ SOT-343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 284+ | 1.87 EUR |
| ICL7663SACPA |
|
Hersteller: Renesas Electronics Corporation
Description: IC REG LINEAR POS ADJ 40MA 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 40mA, 40mA
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 16V
Number of Regulators: 2
Supplier Device Package: 8-PDIP
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Protection Features: Over Current
Current - Supply (Max): 12 µA
Description: IC REG LINEAR POS ADJ 40MA 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 40mA, 40mA
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 16V
Number of Regulators: 2
Supplier Device Package: 8-PDIP
Voltage - Output (Max): 16V
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Protection Features: Over Current
Current - Supply (Max): 12 µA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 8.98 EUR |
| R1LV0816ASD-5SI#B0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 52TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8, 512K x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 52-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Packaging: Tray
Description: IC SRAM 8MBIT PARALLEL 52TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8, 512K x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 52-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Packaging: Tray
auf Bestellung 928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 50.69 EUR |
| R1LV0816ASB-7SI#B0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Bulk
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Bulk
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 50.12 EUR |
| HD6417707RF60A |
|
Hersteller: Renesas Electronics Corporation
Description: IC MCU 32-BIT FLASH
Packaging: Bulk
Mounting Type: Surface Mount
Program Memory Type: FLASH
Core Size: 32-Bit
DigiKey Programmable: Not Verified
Description: IC MCU 32-BIT FLASH
Packaging: Bulk
Mounting Type: Surface Mount
Program Memory Type: FLASH
Core Size: 32-Bit
DigiKey Programmable: Not Verified
auf Bestellung 1017 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 73.04 EUR |
| NP80N04NHE-S18-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 80A TO262
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 40V 80A TO262
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 151+ | 3.87 EUR |
| R1LP0408DSB-5SR#B0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Memory Organization: 512K x 8
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Obsolete
Supplier Device Package: 32-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Memory Organization: 512K x 8
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Part Status: Obsolete
Supplier Device Package: 32-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 33.13 EUR |
| R1WV3216RBG-7SR#B0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 32MBIT PARALLEL 48TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-TFBGA (7.5x8.5)
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tray
Description: IC SRAM 32MBIT PARALLEL 48TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 48-TFBGA (7.5x8.5)
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tray
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 140.44 EUR |
| 2SK1580-T1-A |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 16V 100MA SC70-3 SSP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 1mA, 4V
Vgs(th) (Max) @ Id: 1.6V @ 10µA
Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
Part Status: Obsolete
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 3 V
Description: MOSFET N-CH 16V 100MA SC70-3 SSP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 1mA, 4V
Vgs(th) (Max) @ Id: 1.6V @ 10µA
Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
Part Status: Obsolete
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 3 V
auf Bestellung 19993 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 922+ | 0.6 EUR |
| PS7804-1A-A |
|
Hersteller: Renesas Electronics Corporation
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Strip
Package / Case: 4-SMD (0.165", 4.20mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-Ultra Small Flatlead
Part Status: Obsolete
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Strip
Package / Case: 4-SMD (0.165", 4.20mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.1VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-Ultra Small Flatlead
Part Status: Obsolete
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 63+ | 6.57 EUR |
| HD6473837H |
|
Hersteller: Renesas Electronics Corporation
Description: IC MCU 8BIT 60KB OTP 100QFP
Packaging: Tray
Package / Case: 100-BFQFP
Mounting Type: Surface Mount
Speed: 5MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C
Oscillator Type: Internal
Program Memory Type: OTP
Core Processor: H8/300L
Data Converters: A/D 12x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SCI
Peripherals: LCD, PWM
Supplier Device Package: 100-QFP (14x14)
Part Status: Obsolete
Number of I/O: 84
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 60KB OTP 100QFP
Packaging: Tray
Package / Case: 100-BFQFP
Mounting Type: Surface Mount
Speed: 5MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -20°C ~ 75°C
Oscillator Type: Internal
Program Memory Type: OTP
Core Processor: H8/300L
Data Converters: A/D 12x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SCI
Peripherals: LCD, PWM
Supplier Device Package: 100-QFP (14x14)
Part Status: Obsolete
Number of I/O: 84
DigiKey Programmable: Not Verified
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 43.65 EUR |
| HD6473834UH |
|
Hersteller: Renesas Electronics Corporation
Description: IC MCU 8BIT 32KB OTP 100QFP
Packaging: Tray
Package / Case: 100-BFQFP
Mounting Type: Surface Mount
Speed: 5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -20°C ~ 75°C
Oscillator Type: Internal
Program Memory Type: OTP
Core Processor: H8/300L
Data Converters: A/D 12x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SCI
Peripherals: LCD, PWM
Supplier Device Package: 100-QFP (14x14)
Part Status: Obsolete
Number of I/O: 71
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB OTP 100QFP
Packaging: Tray
Package / Case: 100-BFQFP
Mounting Type: Surface Mount
Speed: 5MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -20°C ~ 75°C
Oscillator Type: Internal
Program Memory Type: OTP
Core Processor: H8/300L
Data Converters: A/D 12x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: SCI
Peripherals: LCD, PWM
Supplier Device Package: 100-QFP (14x14)
Part Status: Obsolete
Number of I/O: 71
DigiKey Programmable: Not Verified
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 61.68 EUR |
| RJK60S5DPK-M0#T0 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 20A TO3PSG
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
Supplier Device Package: TO-3PSG
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3PSG
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
Supplier Device Package: TO-3PSG
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 69897 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 32.19 EUR |
| NP80N03MLE-S18-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Description: MOSFET N-CH 30V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 133+ | 4.15 EUR |
| 2SK3634-AZ |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 200V 6A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-251
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Description: MOSFET N-CH 200V 6A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-251
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 2971 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 245+ | 2.17 EUR |
| 2SK3054-T1-A |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 50V 100MA SC70-3 SSP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
Part Status: Obsolete
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 3 V
Description: MOSFET N-CH 50V 100MA SC70-3 SSP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
Part Status: Obsolete
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 3 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1581+ | 0.33 EUR |
| R5F2M122ANDD#U0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 8KB FLASH 20DIP
DigiKey Programmable: Not Verified
Number of I/O: 17
Supplier Device Package: 20-PDIP
Peripherals: POR, PWM, Voltage Detect, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 6x10b
Core Processor: R8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -20°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 20MHz
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Packaging: Tray
Description: IC MCU 16BIT 8KB FLASH 20DIP
DigiKey Programmable: Not Verified
Number of I/O: 17
Supplier Device Package: 20-PDIP
Peripherals: POR, PWM, Voltage Detect, WDT
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 6x10b
Core Processor: R8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -20°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 20MHz
Mounting Type: Through Hole
Package / Case: 20-DIP (0.300", 7.62mm)
Packaging: Tray
auf Bestellung 163 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 17.62 EUR |
| UPD720102F1-CA7-A |
|
Hersteller: Renesas Electronics Corporation
Description: USB BUS CONTROLLER
DigiKey Programmable: Not Verified
Supplier Device Package: 121-FBGA (8x8)
Standards: USB 2.0
Protocol: USB
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -20°C ~ 70°C
Interface: PCI
Function: Controller
Package / Case: 121-VFBGA
Packaging: Tray
Description: USB BUS CONTROLLER
DigiKey Programmable: Not Verified
Supplier Device Package: 121-FBGA (8x8)
Standards: USB 2.0
Protocol: USB
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -20°C ~ 70°C
Interface: PCI
Function: Controller
Package / Case: 121-VFBGA
Packaging: Tray
auf Bestellung 3322 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 9.97 EUR |
| PS2561AL2-1-E3-A |
|
Hersteller: Renesas Electronics Corporation
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 3µs, 5µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 3µs, 5µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 384259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 942+ | 0.57 EUR |
| RJK60S5DPE-00#J3 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 20A 4LDPAK
Packaging: Bulk
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: LDPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 600V 20A 4LDPAK
Packaging: Bulk
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: LDPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 32.19 EUR |
| R1EX24016ATAS0A#S0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC EEPROM 16KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Access Time: 900 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC EEPROM 16KBIT I2C 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Access Time: 900 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 198+ | 2.73 EUR |
| RJK60S4DPP-E0#T2 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8A, 10V
Power Dissipation (Max): 29.9W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 25 V
Description: MOSFET N-CH 600V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8A, 10V
Power Dissipation (Max): 29.9W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 25 V
auf Bestellung 114548 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 57+ | 9.28 EUR |
| UPA2802T1L-E2-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 20V 18A 8DFN
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Description: MOSFET N-CH 20V 18A 8DFN
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 190+ | 2.9 EUR |
| UPA2450BTL-E1-A |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 20V 8.6A 6HWSON
Packaging: Bulk
Package / Case: 6-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.6A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 6-HWSON
Description: MOSFET 2N-CH 20V 8.6A 6HWSON
Packaging: Bulk
Package / Case: 6-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.6A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 6-HWSON
auf Bestellung 527490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 346+ | 1.59 EUR |
| R1LP0408DSB-7SI#B0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2272 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 33.13 EUR |
| 2SC5750-T1-A |
|
Hersteller: Renesas Electronics Corporation
Description: RF TRANS NPN 6V 15GHZ SOT-343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343
Description: RF TRANS NPN 6V 15GHZ SOT-343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 651+ | 0.81 EUR |
| BCR5AM-12LB#B01 |
|
Hersteller: Renesas Electronics Corporation
Description: TRIAC 600V 5A TO220-3
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 5 A
Supplier Device Package: TO-220-3
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz
Current - Gate Trigger (Igt) (Max): 20 mA
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bag
Description: TRIAC 600V 5A TO220-3
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 5 A
Supplier Device Package: TO-220-3
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A @ 60Hz
Current - Gate Trigger (Igt) (Max): 20 mA
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bag
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 361+ | 1.63 EUR |
| BCR10CM-12LA#B00 |
|
Hersteller: Renesas Electronics Corporation
Description: TRIAC 600V 10A TO220-3
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 30 mA
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 10 A
Supplier Device Package: TO-220-3
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Description: TRIAC 600V 10A TO220-3
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 30 mA
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 10 A
Supplier Device Package: TO-220-3
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
auf Bestellung 10966 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 3.77 EUR |
| RJK60S3DPP-E0#T2 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 440mOhm @ 6A, 10V
Power Dissipation (Max): 27.7W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Description: MOSFET N-CH 600V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 440mOhm @ 6A, 10V
Power Dissipation (Max): 27.7W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
auf Bestellung 129813 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 7.43 EUR |
| HD6473726HV |
|
Hersteller: Renesas Electronics Corporation
Description: IC MCU 8BIT 48KB OTP 80QFP
DigiKey Programmable: Not Verified
Number of I/O: 60
Supplier Device Package: 80-QFP (14x14)
Peripherals: PWM, VFD
Connectivity: SCI
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: H8/300L
Program Memory Type: OTP
Oscillator Type: External
Operating Temperature: -20°C ~ 75°C (TA)
RAM Size: 1K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 5MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
Description: IC MCU 8BIT 48KB OTP 80QFP
DigiKey Programmable: Not Verified
Number of I/O: 60
Supplier Device Package: 80-QFP (14x14)
Peripherals: PWM, VFD
Connectivity: SCI
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x8b
Core Processor: H8/300L
Program Memory Type: OTP
Oscillator Type: External
Operating Temperature: -20°C ~ 75°C (TA)
RAM Size: 1K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 5MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 71.46 EUR |
| BCR10CM-12LB#B01 |
|
Hersteller: Renesas Electronics Corporation
Description: TRIAC 600V 10A
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 30 mA
Configuration: Single
Triac Type: Standard
Packaging: Tube
Description: TRIAC 600V 10A
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - Gate Trigger (Igt) (Max): 30 mA
Configuration: Single
Triac Type: Standard
Packaging: Tube
auf Bestellung 26524 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 3.77 EUR |
| 2SK4080-ZK-E1-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 48A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 12 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: TO-252 (MP-3Z)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 30V 48A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 12 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: TO-252 (MP-3Z)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 378+ | 1.52 EUR |
| UPD78F9222CS-CAC-A |
|
Hersteller: Renesas Electronics Corporation
Description: IC MCU 8BIT 4KB FLASH
Packaging: Tray
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 10MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 78K0S
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 15
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH
Packaging: Tray
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 10MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: 78K0S
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 15
DigiKey Programmable: Not Verified
auf Bestellung 145898 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 6.13 EUR |
| R1LV0808ASB-7SI#S0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Bulk
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 52.75 EUR |
| R1LP0408DSB-7SR#B0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 31.21 EUR |
| 2SC4095-T1-A |
|
Hersteller: Renesas Electronics Corporation
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SOT-143
Part Status: Obsolete
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SOT-143
Part Status: Obsolete
auf Bestellung 188236 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 833+ | 0.7 EUR |
| R1LP0408DSB-7SI#S0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2941 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 33.13 EUR |
| 2SK3107-T1-A |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 100MA SC75-3 USM
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: SC-75-3, USM
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
Description: MOSFET N-CH 30V 100MA SC75-3 USM
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: SC-75-3, USM
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
auf Bestellung 3202 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 791+ | 0.68 EUR |
| ISL6520BCBZ-T |
|
Hersteller: Renesas Electronics Corporation
Description: IC REG CTRLR BUCK 8SOIC
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Enable, Phase Control
Synchronous Rectifier: Yes
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Topology: Buck
Frequency - Switching: 300kHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC REG CTRLR BUCK 8SOIC
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 100%
Output Phases: 1
Control Features: Enable, Phase Control
Synchronous Rectifier: Yes
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Topology: Buck
Frequency - Switching: 300kHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 114+ | 5.31 EUR |
| 2SK2090-T2-A |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 50V 100MA SC70-3 SSP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
Part Status: Obsolete
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 3 V
Description: MOSFET N-CH 50V 100MA SC70-3 SSP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
Part Status: Obsolete
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 3 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 922+ | 0.6 EUR |
| RJK0301DPB-00#J0 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 60A LFPAK
Packaging: Bulk
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Description: MOSFET N-CH 30V 60A LFPAK
Packaging: Bulk
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Supplier Device Package: LFPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
auf Bestellung 19786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 148+ | 4.07 EUR |
| 2SK2858-T1-A |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 100MA SC70-3 SSP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
Description: MOSFET N-CH 30V 100MA SC70-3 SSP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
auf Bestellung 38000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13172+ | 0.038 EUR |
| 2SK3814-AZ |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 60A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 84W (Tc)
Supplier Device Package: TO-251
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V
Description: MOSFET N-CH 60V 60A TO251
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V
Power Dissipation (Max): 1W (Ta), 84W (Tc)
Supplier Device Package: TO-251
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V
auf Bestellung 6430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 183+ | 3.17 EUR |
| 2SK3659-AZ |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 20V 65A TO220-3
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Description: MOSFET N-CH 20V 65A TO220-3
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 174+ | 3.06 EUR |
| R5F2M112ANDD#U0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC MCU 16BIT 8KB FLASH 14DIP
Packaging: Tray
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: R8C
Data Converters: A/D 5x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, Voltage Detect, WDT
Supplier Device Package: 14-PDIP
Number of I/O: 11
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 8KB FLASH 14DIP
Packaging: Tray
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: R8C
Data Converters: A/D 5x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, Voltage Detect, WDT
Supplier Device Package: 14-PDIP
Number of I/O: 11
DigiKey Programmable: Not Verified
auf Bestellung 4371 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 17.62 EUR |
| UPA2560T1H-T1-AT |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 30V 4.5A 8VSOF
Supplier Device Package: 8-VSOF
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
Description: MOSFET 2N-CH 30V 4.5A 8VSOF
Supplier Device Package: 8-VSOF
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 579+ | 0.95 EUR |
| R1EX24016ASAS0A#U0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Access Time: 900 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC EEPROM 16KBIT I2C 400KHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Access Time: 900 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 15294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 198+ | 2.73 EUR |
| RJK60S5DPP-E0#T2 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
Power Dissipation (Max): 33.7W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 178mOhm @ 10A, 10V
Power Dissipation (Max): 33.7W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 32.19 EUR |
| R1LV0816ASB-7SI#S0 |
|
Hersteller: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Bulk
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 512K x 16
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Bulk
auf Bestellung 2704 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 52.75 EUR |
| RJK6026DPP-E0#T2 |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28.5W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 600V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28.5W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
auf Bestellung 40100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 169+ | 3.14 EUR |
| HD6417020SVX12I |
|
Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT ROMLESS 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: SH-1
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, SCI
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT ROMLESS 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: SH-1
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, SCI
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Number of I/O: 32
DigiKey Programmable: Not Verified
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 92.14 EUR |
| NP80N04MHE-S18-AY |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 80A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 40V 80A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 227950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 151+ | 3.87 EUR |
| HD6417032VF12V |
|
Hersteller: Renesas Electronics Corporation
Description: IC MCU 32BIT ROMLESS 112QFP
Packaging: Tray
Package / Case: 112-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
RAM Size: 8K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: SH-1
Data Converters: A/D 8x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SCI
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 112-QFP (20x20)
Part Status: Obsolete
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT ROMLESS 112QFP
Packaging: Tray
Package / Case: 112-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
RAM Size: 8K x 8
Operating Temperature: -20°C ~ 75°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: SH-1
Data Converters: A/D 8x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SCI
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 112-QFP (20x20)
Part Status: Obsolete
Number of I/O: 32
DigiKey Programmable: Not Verified
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 139.59 EUR |
| 2SC5751-T2-A |
|
Hersteller: Renesas Electronics Corporation
Description: RF TRANS NPN 6V 15GHZ SOT-343F
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343F
Description: RF TRANS NPN 6V 15GHZ SOT-343F
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 205mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Supplier Device Package: SOT-343F
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 738+ | 0.73 EUR |
| 2SK1658-T1-A |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 100MA SC70-3 SSP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 3 V
Description: MOSFET N-CH 30V 100MA SC70-3 SSP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: SC-70-3, SSP, Miniature Mini Mold
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 3 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1010+ | 0.54 EUR |