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SFR03EZPJ684 SFR03EZPJ684 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 680 kOhms
auf Bestellung 9906 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
205+0.086 EUR
266+0.066 EUR
323+0.055 EUR
394+0.045 EUR
489+0.036 EUR
543+0.032 EUR
1000+0.029 EUR
Mindestbestellmenge: 100
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MCR03SEQPF6802 MCR03SEQPF6802 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 68 kOhms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.0074 EUR
10000+0.007 EUR
15000+0.0069 EUR
25000+0.0067 EUR
35000+0.0066 EUR
50000+0.0065 EUR
Mindestbestellmenge: 5000
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MCR03SEQPF6802 MCR03SEQPF6802 Rohm Semiconductor datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 68 kOhms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
1112+0.016 EUR
1250+0.014 EUR
1588+0.011 EUR
1786+0.0099 EUR
1946+0.009 EUR
2084+0.0084 EUR
2500+0.0078 EUR
Mindestbestellmenge: 112
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ESR03EZPF1781 ESR03EZPF1781 Rohm Semiconductor datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: RES 1.78K OHM 1% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 1.78 kOhms
Produkt ist nicht verfügbar
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ESR03EZPF1781 ESR03EZPF1781 Rohm Semiconductor datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: RES 1.78K OHM 1% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 1.78 kOhms
auf Bestellung 4525 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
157+0.11 EUR
202+0.087 EUR
240+0.074 EUR
281+0.063 EUR
341+0.052 EUR
500+0.045 EUR
1000+0.04 EUR
Mindestbestellmenge: 77
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RX2L10BBGC7G RX2L10BBGC7G Rohm Semiconductor rx2l10bbgc7g-e.pdf Description: NCH 60V 180A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.52 EUR
30+5.43 EUR
120+4.52 EUR
510+3.86 EUR
Mindestbestellmenge: 2
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RBR20T40ANZC9 RBR20T40ANZC9 Rohm Semiconductor datasheet?p=RBR20T40ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 40V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RBR20T30ANZC9 RBR20T30ANZC9 Rohm Semiconductor datasheet?p=RBR20T30ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARR SCHOTT 30V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
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TCOA0J106M8R TCOA0J106M8R Rohm Semiconductor tco_a.pdf Description: CAP TANT POLY 10UF 6.3V 1206
Tolerance: ±20%
Features: General Purpose
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Mounting Type: Surface Mount
Type: Molded
Operating Temperature: -55°C ~ 105°C
ESR (Equivalent Series Resistance): 200mOhm @ 100kHz
Manufacturer Size Code: A
Height - Seated (Max): 0.071" (1.80mm)
Capacitance: 10 µF
Voltage - Rated: 6.3 V
Produkt ist nicht verfügbar
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ESR10EZPF8201 ESR10EZPF8201 Rohm Semiconductor esr-e.pdf Description: RES 8.2K OHM 1% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 8.2 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.042 EUR
Mindestbestellmenge: 5000
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ESR10EZPF8201 ESR10EZPF8201 Rohm Semiconductor esr-e.pdf Description: RES 8.2K OHM 1% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 8.2 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
130+0.14 EUR
165+0.11 EUR
196+0.09 EUR
228+0.077 EUR
273+0.065 EUR
500+0.057 EUR
1000+0.051 EUR
Mindestbestellmenge: 67
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SFR03EZPJ392 SFR03EZPJ392 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RES 0603 CA
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.9 kOhms
Produkt ist nicht verfügbar
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LTR18EZPJ242 LTR18EZPJ242 Rohm Semiconductor ltr-e.pdf Description: RES 2.4K OHM 5% 3/4W 1206 WIDE
Power (Watts): 0.75W, 3/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 kOhms
Produkt ist nicht verfügbar
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LTR18EZPJ242 LTR18EZPJ242 Rohm Semiconductor ltr-e.pdf Description: RES 2.4K OHM 5% 3/4W 1206 WIDE
Power (Watts): 0.75W, 3/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 kOhms
auf Bestellung 4989 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
127+0.14 EUR
162+0.11 EUR
192+0.092 EUR
229+0.077 EUR
268+0.066 EUR
500+0.058 EUR
1000+0.052 EUR
Mindestbestellmenge: 63
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MCR10SEQPF4702 MCR10SEQPF4702 Rohm Semiconductor datasheet?p=MCR10SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 2012(0805)SIZE, HIGH POWER THICK
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.012 EUR
10000+0.011 EUR
Mindestbestellmenge: 5000
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MCR10SEQPF4702 MCR10SEQPF4702 Rohm Semiconductor datasheet?p=MCR10SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 2012(0805)SIZE, HIGH POWER THICK
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
auf Bestellung 99870 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
715+0.025 EUR
807+0.022 EUR
1000+0.018 EUR
1122+0.016 EUR
1211+0.015 EUR
1296+0.014 EUR
2500+0.013 EUR
Mindestbestellmenge: 112
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LTR100LJZPJSR051 LTR100LJZPJSR051 Rohm Semiconductor datasheet?p=LTR100LJZPJS&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: HIGH POWER CHIP RESISTOR : HIGH-
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 51 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPJSR051 LTR100LJZPJSR051 Rohm Semiconductor datasheet?p=LTR100LJZPJS&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: HIGH POWER CHIP RESISTOR : HIGH-
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 51 mOhms
auf Bestellung 3995 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
17+1.09 EUR
25+0.95 EUR
50+0.87 EUR
100+0.81 EUR
250+0.74 EUR
500+0.7 EUR
1000+0.67 EUR
Mindestbestellmenge: 11
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LTR18EZPJSR075 LTR18EZPJSR075 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.075 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 75 mOhms
Produkt ist nicht verfügbar
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LTR18EZPJSR075 LTR18EZPJSR075 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.075 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 75 mOhms
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
34+0.53 EUR
40+0.45 EUR
50+0.4 EUR
100+0.36 EUR
250+0.32 EUR
500+0.3 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
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LTR18EZPJ750 LTR18EZPJ750 Rohm Semiconductor ltr-e.pdf Description: RES SMD 75 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 75 Ohms
Produkt ist nicht verfügbar
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LTR18EZPJ750 LTR18EZPJ750 Rohm Semiconductor ltr-e.pdf Description: RES SMD 75 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 75 Ohms
auf Bestellung 4490 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
129+0.14 EUR
164+0.11 EUR
195+0.09 EUR
232+0.076 EUR
272+0.065 EUR
500+0.058 EUR
1000+0.052 EUR
Mindestbestellmenge: 67
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SDR03EZPJ111 SDR03EZPJ111 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 Ohms
Produkt ist nicht verfügbar
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SDR03EZPJ111 SDR03EZPJ111 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 Ohms
auf Bestellung 4100 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
205+0.086 EUR
264+0.067 EUR
319+0.055 EUR
378+0.047 EUR
465+0.038 EUR
536+0.033 EUR
1000+0.029 EUR
Mindestbestellmenge: 100
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RB178VYM-40FHTR RB178VYM-40FHTR Rohm Semiconductor datasheet?p=RB178VYM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 40V, 1A, SOD-323HE, SCHOTTKY BAR
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 40 V
Qualification: AEC-Q101
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RB178VYM-40FHTR RB178VYM-40FHTR Rohm Semiconductor datasheet?p=RB178VYM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 40V, 1A, SOD-323HE, SCHOTTKY BAR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 40 V
Qualification: AEC-Q101
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RH7L03BBKFRATCB RH7L03BBKFRATCB Rohm Semiconductor datasheet?p=RH7L03BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RH7L03BBKFRATCB RH7L03BBKFRATCB Rohm Semiconductor datasheet?p=RH7L03BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
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LTR100JZPFLR300 LTR100JZPFLR300 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
Produkt ist nicht verfügbar
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LTR100JZPFLR300 LTR100JZPFLR300 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
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ESR03EZPF9102 ESR03EZPF9102 Rohm Semiconductor esr-e.pdf Description: RES 91K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 kOhms
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ESR03EZPF9102 ESR03EZPF9102 Rohm Semiconductor esr-e.pdf Description: RES 91K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 kOhms
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RB228NS-30TL RB228NS-30TL Rohm Semiconductor datasheet?p=RB228NS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
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RB228NS-30TL RB228NS-30TL Rohm Semiconductor datasheet?p=RB228NS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
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RB228NS-30FHTL RB228NS-30FHTL Rohm Semiconductor datasheet?p=RB228NS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB228NS-30FHTL RB228NS-30FHTL Rohm Semiconductor datasheet?p=RB228NS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 999 Stücke:
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RB228NS-60FHTL RB228NS-60FHTL Rohm Semiconductor datasheet?p=RB228NS-60FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB228NS-60FHTL RB228NS-60FHTL Rohm Semiconductor datasheet?p=RB228NS-60FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 581 Stücke:
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100+1.9 EUR
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RB228NS-40TL RB228NS-40TL Rohm Semiconductor datasheet?p=RB228NS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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RB228NS-40TL RB228NS-40TL Rohm Semiconductor datasheet?p=RB228NS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 670 Stücke:
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RQ3L270BJFRATCB RQ3L270BJFRATCB Rohm Semiconductor rq3l270bjfratcb-e.pdf Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
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RQ3L270BJFRATCB RQ3L270BJFRATCB Rohm Semiconductor rq3l270bjfratcb-e.pdf Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
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500+0.99 EUR
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SDR03EZPF1202 SDR03EZPF1202 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 kOhms
Produkt ist nicht verfügbar
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SDR03EZPF1202 SDR03EZPF1202 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 kOhms
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72+0.25 EUR
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500+0.049 EUR
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SDR03EZPF12R0 SDR03EZPF12R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 Ohms
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SDR03EZPF12R0 SDR03EZPF12R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 Ohms
auf Bestellung 1595 Stücke:
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72+0.25 EUR
148+0.12 EUR
190+0.093 EUR
225+0.078 EUR
263+0.067 EUR
318+0.055 EUR
500+0.049 EUR
1000+0.044 EUR
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SH8MC4TB1 SH8MC4TB1 Rohm Semiconductor sh8mc4tb1-e.pdf Description: MOSFET N/P-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SH8MC4TB1 SH8MC4TB1 Rohm Semiconductor sh8mc4tb1-e.pdf Description: MOSFET N/P-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2500 Stücke:
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8+2.39 EUR
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100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
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BD67872MWV-ZE2 BD67872MWV-ZE2 Rohm Semiconductor datasheet?p=BD67872MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD67872MWV-ZE2 BD67872MWV-ZE2 Rohm Semiconductor datasheet?p=BD67872MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.98 EUR
10+2.96 EUR
25+2.71 EUR
100+2.43 EUR
250+2.3 EUR
500+2.22 EUR
1000+2.15 EUR
Mindestbestellmenge: 5
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BD67870MWV-ZE2 BD67870MWV-ZE2 Rohm Semiconductor datasheet?p=BD67870MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD67870MWV-ZE2 BD67870MWV-ZE2 Rohm Semiconductor datasheet?p=BD67870MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.05 EUR
10+3.02 EUR
25+2.76 EUR
100+2.48 EUR
250+2.34 EUR
500+2.26 EUR
1000+2.2 EUR
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BD67871MWV-ZE2 BD67871MWV-ZE2 Rohm Semiconductor datasheet?p=BD67871MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD67871MWV-ZE2 BD67871MWV-ZE2 Rohm Semiconductor datasheet?p=BD67871MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.04 EUR
10+4.57 EUR
25+4.2 EUR
100+3.8 EUR
250+3.61 EUR
500+3.49 EUR
1000+3.39 EUR
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BD67871MWV-EVK-003 BD67871MWV-EVK-003 Rohm Semiconductor BD6787xMWV-Z-EVK.jpg Description: EVALUATION BOARD - BD67871MWV-EV
Packaging: Bulk
Produkt ist nicht verfügbar
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BD67872MWV-EVK-003 BD67872MWV-EVK-003 Rohm Semiconductor BD6787xMWV-Z-EVK.jpg Description: EVALUATION BOARD - BD67872MWV-EV
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD67870MWV-EVK-003 BD67870MWV-EVK-003 Rohm Semiconductor BD6787xMWV-Z-EVK.jpg Description: EVALUATION BOARD - BD67870MWV-EV
Packaging: Bulk
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+186.74 EUR
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R8011KNZ4C13 R8011KNZ4C13 Rohm Semiconductor r8011knz4c13-e.pdf Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 600 Stücke:
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600+5.23 EUR
Mindestbestellmenge: 600
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R8011KNZ4C13 R8011KNZ4C13 Rohm Semiconductor r8011knz4c13-e.pdf Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 600 Stücke:
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2+12.16 EUR
10+8.28 EUR
100+6.4 EUR
Mindestbestellmenge: 2
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RH6E040BGTB1 RH6E040BGTB1 Rohm Semiconductor rh6e040bgtb1-e.pdf Description: NCH 30V 125A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
Power Dissipation (Max): 2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 3000 Stücke:
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3000+0.96 EUR
Mindestbestellmenge: 3000
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SFR03EZPJ684 sfr-e.pdf
SFR03EZPJ684
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 680 kOhms
auf Bestellung 9906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
205+0.086 EUR
266+0.066 EUR
323+0.055 EUR
394+0.045 EUR
489+0.036 EUR
543+0.032 EUR
1000+0.029 EUR
Mindestbestellmenge: 100
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MCR03SEQPF6802 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF6802
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 68 kOhms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.0074 EUR
10000+0.007 EUR
15000+0.0069 EUR
25000+0.0067 EUR
35000+0.0066 EUR
50000+0.0065 EUR
Mindestbestellmenge: 5000
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MCR03SEQPF6802 datasheet?p=MCR03SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR03SEQPF6802
Hersteller: Rohm Semiconductor
Description: 1608(0603)SIZE, HIGH POWER THICK
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 68 kOhms
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
1112+0.016 EUR
1250+0.014 EUR
1588+0.011 EUR
1786+0.0099 EUR
1946+0.009 EUR
2084+0.0084 EUR
2500+0.0078 EUR
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ESR03EZPF1781 datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ESR03EZPF1781
Hersteller: Rohm Semiconductor
Description: RES 1.78K OHM 1% 1/4W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 1.78 kOhms
Produkt ist nicht verfügbar
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ESR03EZPF1781 datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ESR03EZPF1781
Hersteller: Rohm Semiconductor
Description: RES 1.78K OHM 1% 1/4W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 1.78 kOhms
auf Bestellung 4525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
157+0.11 EUR
202+0.087 EUR
240+0.074 EUR
281+0.063 EUR
341+0.052 EUR
500+0.045 EUR
1000+0.04 EUR
Mindestbestellmenge: 77
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RX2L10BBGC7G rx2l10bbgc7g-e.pdf
RX2L10BBGC7G
Hersteller: Rohm Semiconductor
Description: NCH 60V 180A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.52 EUR
30+5.43 EUR
120+4.52 EUR
510+3.86 EUR
Mindestbestellmenge: 2
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RBR20T40ANZC9 datasheet?p=RBR20T40ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20T40ANZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 40V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RBR20T30ANZC9 datasheet?p=RBR20T30ANZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20T30ANZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
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TCOA0J106M8R tco_a.pdf
TCOA0J106M8R
Hersteller: Rohm Semiconductor
Description: CAP TANT POLY 10UF 6.3V 1206
Tolerance: ±20%
Features: General Purpose
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Mounting Type: Surface Mount
Type: Molded
Operating Temperature: -55°C ~ 105°C
ESR (Equivalent Series Resistance): 200mOhm @ 100kHz
Manufacturer Size Code: A
Height - Seated (Max): 0.071" (1.80mm)
Capacitance: 10 µF
Voltage - Rated: 6.3 V
Produkt ist nicht verfügbar
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ESR10EZPF8201 esr-e.pdf
ESR10EZPF8201
Hersteller: Rohm Semiconductor
Description: RES 8.2K OHM 1% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 8.2 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.042 EUR
Mindestbestellmenge: 5000
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ESR10EZPF8201 esr-e.pdf
ESR10EZPF8201
Hersteller: Rohm Semiconductor
Description: RES 8.2K OHM 1% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 8.2 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
130+0.14 EUR
165+0.11 EUR
196+0.09 EUR
228+0.077 EUR
273+0.065 EUR
500+0.057 EUR
1000+0.051 EUR
Mindestbestellmenge: 67
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SFR03EZPJ392 sfr-e.pdf
SFR03EZPJ392
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RES 0603 CA
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.9 kOhms
Produkt ist nicht verfügbar
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LTR18EZPJ242 ltr-e.pdf
LTR18EZPJ242
Hersteller: Rohm Semiconductor
Description: RES 2.4K OHM 5% 3/4W 1206 WIDE
Power (Watts): 0.75W, 3/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 kOhms
Produkt ist nicht verfügbar
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LTR18EZPJ242 ltr-e.pdf
LTR18EZPJ242
Hersteller: Rohm Semiconductor
Description: RES 2.4K OHM 5% 3/4W 1206 WIDE
Power (Watts): 0.75W, 3/4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 2.4 kOhms
auf Bestellung 4989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
127+0.14 EUR
162+0.11 EUR
192+0.092 EUR
229+0.077 EUR
268+0.066 EUR
500+0.058 EUR
1000+0.052 EUR
Mindestbestellmenge: 63
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MCR10SEQPF4702 datasheet?p=MCR10SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR10SEQPF4702
Hersteller: Rohm Semiconductor
Description: 2012(0805)SIZE, HIGH POWER THICK
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.012 EUR
10000+0.011 EUR
Mindestbestellmenge: 5000
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MCR10SEQPF4702 datasheet?p=MCR10SEQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR10SEQPF4702
Hersteller: Rohm Semiconductor
Description: 2012(0805)SIZE, HIGH POWER THICK
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 kOhms
auf Bestellung 99870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
715+0.025 EUR
807+0.022 EUR
1000+0.018 EUR
1122+0.016 EUR
1211+0.015 EUR
1296+0.014 EUR
2500+0.013 EUR
Mindestbestellmenge: 112
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LTR100LJZPJSR051 datasheet?p=LTR100LJZPJS&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
LTR100LJZPJSR051
Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR : HIGH-
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 51 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPJSR051 datasheet?p=LTR100LJZPJS&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
LTR100LJZPJSR051
Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP RESISTOR : HIGH-
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 51 mOhms
auf Bestellung 3995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.09 EUR
25+0.95 EUR
50+0.87 EUR
100+0.81 EUR
250+0.74 EUR
500+0.7 EUR
1000+0.67 EUR
Mindestbestellmenge: 11
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LTR18EZPJSR075 ltr-low-e.pdf
LTR18EZPJSR075
Hersteller: Rohm Semiconductor
Description: RES 0.075 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 75 mOhms
Produkt ist nicht verfügbar
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LTR18EZPJSR075 ltr-low-e.pdf
LTR18EZPJSR075
Hersteller: Rohm Semiconductor
Description: RES 0.075 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 75 mOhms
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
34+0.53 EUR
40+0.45 EUR
50+0.4 EUR
100+0.36 EUR
250+0.32 EUR
500+0.3 EUR
1000+0.28 EUR
Mindestbestellmenge: 20
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LTR18EZPJ750 ltr-e.pdf
LTR18EZPJ750
Hersteller: Rohm Semiconductor
Description: RES SMD 75 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 75 Ohms
Produkt ist nicht verfügbar
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LTR18EZPJ750 ltr-e.pdf
LTR18EZPJ750
Hersteller: Rohm Semiconductor
Description: RES SMD 75 OHM 5% 1.5W 1206 WIDE
Power (Watts): 1.5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0612 (1632 Metric)
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 75 Ohms
auf Bestellung 4490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
129+0.14 EUR
164+0.11 EUR
195+0.09 EUR
232+0.076 EUR
272+0.065 EUR
500+0.058 EUR
1000+0.052 EUR
Mindestbestellmenge: 67
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SDR03EZPJ111 sdr-e.pdf
SDR03EZPJ111
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 Ohms
Produkt ist nicht verfügbar
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SDR03EZPJ111 sdr-e.pdf
SDR03EZPJ111
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 110 Ohms
auf Bestellung 4100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
205+0.086 EUR
264+0.067 EUR
319+0.055 EUR
378+0.047 EUR
465+0.038 EUR
536+0.033 EUR
1000+0.029 EUR
Mindestbestellmenge: 100
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RB178VYM-40FHTR datasheet?p=RB178VYM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB178VYM-40FHTR
Hersteller: Rohm Semiconductor
Description: 40V, 1A, SOD-323HE, SCHOTTKY BAR
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
Mindestbestellmenge: 3000
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RB178VYM-40FHTR datasheet?p=RB178VYM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB178VYM-40FHTR
Hersteller: Rohm Semiconductor
Description: 40V, 1A, SOD-323HE, SCHOTTKY BAR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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RH7L03BBKFRATCB datasheet?p=RH7L03BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L03BBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RH7L03BBKFRATCB datasheet?p=RH7L03BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L03BBKFRATCB
Hersteller: Rohm Semiconductor
Description: NCH 60V 35A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 70µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
11+1.67 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 7
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LTR100JZPFLR300 ltr-low-e.pdf
LTR100JZPFLR300
Hersteller: Rohm Semiconductor
Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
Produkt ist nicht verfügbar
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LTR100JZPFLR300 ltr-low-e.pdf
LTR100JZPFLR300
Hersteller: Rohm Semiconductor
Description: RES SMD 0.3 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 300 mOhms
auf Bestellung 6609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.96 EUR
25+0.81 EUR
50+0.76 EUR
100+0.71 EUR
250+0.65 EUR
500+0.61 EUR
1000+0.58 EUR
Mindestbestellmenge: 12
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ESR03EZPF9102 esr-e.pdf
ESR03EZPF9102
Hersteller: Rohm Semiconductor
Description: RES 91K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.033 EUR
Mindestbestellmenge: 5000
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ESR03EZPF9102 esr-e.pdf
ESR03EZPF9102
Hersteller: Rohm Semiconductor
Description: RES 91K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 91 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
157+0.11 EUR
200+0.088 EUR
239+0.074 EUR
279+0.063 EUR
339+0.052 EUR
500+0.046 EUR
1000+0.041 EUR
Mindestbestellmenge: 77
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RB228NS-30TL datasheet?p=RB228NS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-30TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Produkt ist nicht verfügbar
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RB228NS-30TL datasheet?p=RB228NS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-30TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
auf Bestellung 821 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
10+2.41 EUR
100+1.76 EUR
500+1.42 EUR
Mindestbestellmenge: 5
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RB228NS-30FHTL datasheet?p=RB228NS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-30FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB228NS-30FHTL datasheet?p=RB228NS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-30FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.43 EUR
100+1.9 EUR
500+1.56 EUR
Mindestbestellmenge: 5
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RB228NS-60FHTL datasheet?p=RB228NS-60FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-60FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RB228NS-60FHTL datasheet?p=RB228NS-60FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-60FHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.55 EUR
100+1.9 EUR
500+1.56 EUR
Mindestbestellmenge: 5
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RB228NS-40TL datasheet?p=RB228NS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-40TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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RB228NS-40TL datasheet?p=RB228NS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB228NS-40TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 670 Stücke:
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Anzahl Preis
5+3.98 EUR
10+2.57 EUR
100+1.76 EUR
500+1.42 EUR
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RQ3L270BJFRATCB rq3l270bjfratcb-e.pdf
RQ3L270BJFRATCB
Hersteller: Rohm Semiconductor
Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
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RQ3L270BJFRATCB rq3l270bjfratcb-e.pdf
RQ3L270BJFRATCB
Hersteller: Rohm Semiconductor
Description: PCH -60V -27A, HSMT8AG, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 27A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 584µA
Supplier Device Package: 8-HSMT (3.2x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
10+1.82 EUR
100+1.21 EUR
500+0.99 EUR
1000+0.9 EUR
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SDR03EZPF1202 sdr-e.pdf
SDR03EZPF1202
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 kOhms
Produkt ist nicht verfügbar
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SDR03EZPF1202 sdr-e.pdf
SDR03EZPF1202
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 kOhms
auf Bestellung 8177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
148+0.12 EUR
190+0.093 EUR
225+0.078 EUR
263+0.067 EUR
318+0.055 EUR
500+0.049 EUR
1000+0.044 EUR
Mindestbestellmenge: 72
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SDR03EZPF12R0 sdr-e.pdf
SDR03EZPF12R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 Ohms
Produkt ist nicht verfügbar
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SDR03EZPF12R0 sdr-e.pdf
SDR03EZPF12R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 12 Ohms
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
148+0.12 EUR
190+0.093 EUR
225+0.078 EUR
263+0.067 EUR
318+0.055 EUR
500+0.049 EUR
1000+0.044 EUR
Mindestbestellmenge: 72
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SH8MC4TB1 sh8mc4tb1-e.pdf
SH8MC4TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.65 EUR
Mindestbestellmenge: 2500
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SH8MC4TB1 sh8mc4tb1-e.pdf
SH8MC4TB1
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
12+1.51 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
Mindestbestellmenge: 8
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BD67872MWV-ZE2 datasheet?p=BD67872MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67872MWV-ZE2
Hersteller: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD67872MWV-ZE2 datasheet?p=BD67872MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67872MWV-ZE2
Hersteller: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.98 EUR
10+2.96 EUR
25+2.71 EUR
100+2.43 EUR
250+2.3 EUR
500+2.22 EUR
1000+2.15 EUR
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BD67870MWV-ZE2 datasheet?p=BD67870MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67870MWV-ZE2
Hersteller: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD67870MWV-ZE2 datasheet?p=BD67870MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67870MWV-ZE2
Hersteller: Rohm Semiconductor
Description: 4.5V TO 60V, THREE-PHASE BRUSHLE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.05 EUR
10+3.02 EUR
25+2.76 EUR
100+2.48 EUR
250+2.34 EUR
500+2.26 EUR
1000+2.2 EUR
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BD67871MWV-ZE2 datasheet?p=BD67871MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67871MWV-ZE2
Hersteller: Rohm Semiconductor
Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD67871MWV-ZE2 datasheet?p=BD67871MWV-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD67871MWV-ZE2
Hersteller: Rohm Semiconductor
Description: TRIC3 4.5 V TO 60 V, THREE-PHASE
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 1A
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 60V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 60V
Supplier Device Package: UQFN28AV040A
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+4.57 EUR
25+4.2 EUR
100+3.8 EUR
250+3.61 EUR
500+3.49 EUR
1000+3.39 EUR
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BD67871MWV-EVK-003 BD6787xMWV-Z-EVK.jpg
BD67871MWV-EVK-003
Hersteller: Rohm Semiconductor
Description: EVALUATION BOARD - BD67871MWV-EV
Packaging: Bulk
Produkt ist nicht verfügbar
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BD67872MWV-EVK-003 BD6787xMWV-Z-EVK.jpg
BD67872MWV-EVK-003
Hersteller: Rohm Semiconductor
Description: EVALUATION BOARD - BD67872MWV-EV
Packaging: Bulk
Produkt ist nicht verfügbar
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BD67870MWV-EVK-003 BD6787xMWV-Z-EVK.jpg
BD67870MWV-EVK-003
Hersteller: Rohm Semiconductor
Description: EVALUATION BOARD - BD67870MWV-EV
Packaging: Bulk
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+186.74 EUR
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R8011KNZ4C13 r8011knz4c13-e.pdf
R8011KNZ4C13
Hersteller: Rohm Semiconductor
Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
600+5.23 EUR
Mindestbestellmenge: 600
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R8011KNZ4C13 r8011knz4c13-e.pdf
R8011KNZ4C13
Hersteller: Rohm Semiconductor
Description: NCH 800V 11A, TO-247AD, HIGH-SPE
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5.5mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.16 EUR
10+8.28 EUR
100+6.4 EUR
Mindestbestellmenge: 2
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RH6E040BGTB1 rh6e040bgtb1-e.pdf
RH6E040BGTB1
Hersteller: Rohm Semiconductor
Description: NCH 30V 125A, HSMT8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
Power Dissipation (Max): 2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.96 EUR
Mindestbestellmenge: 3000
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