Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (98943) > Seite 1468 nach 1650
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RQ3G150GNTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8 Power dissipation: 20W Case: HSMT8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Gate charge: 24.1nC Polarisation: unipolar Drain current: 39A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.9mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ3L050GNTB | ROHM SEMICONDUCTOR | RQ3L050GNTB SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||
RQ3L070ATTB | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ3L090GNTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 36A Power dissipation: 20W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 21.4mΩ Mounting: SMD Gate charge: 24.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ3P300BHTB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 40A; 32W; HSMT8 Kind of package: reel; tape Mounting: SMD Drain-source voltage: 100V Drain current: 39A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Case: HSMT8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ5A020ZPTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -2A; Idm: -6A; 1W; TSMT3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -6A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±10V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ5A030APTL | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ5A040ZPTL | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ5C035BCTCL | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ5C060BCTCL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -18A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±8V On-state resistance: 51mΩ Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ5E015RPTL | ROHM SEMICONDUCTOR | RQ5E015RPTL SMD P channel transistors |
Produkt ist nicht verfügbar |
||||||||||||
RQ5E025TNTL | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ5E030AJTCL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 6A; 1W; TSMT3 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 6A Case: TSMT3 Drain-source voltage: 30V Drain current: 3A On-state resistance: 109mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ5E030RPTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; TSMT3 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Case: TSMT3 Drain-source voltage: -30V Drain current: -3A On-state resistance: 0.125Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ5E035ATTCL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ5E035BNTCL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ5E040AJTCL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Drain-source voltage: 30V Drain current: 4A On-state resistance: 54mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ5E040TNTL | ROHM SEMICONDUCTOR |
![]() ![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ5E050ATTCL | ROHM SEMICONDUCTOR | RQ5E050ATTCL SMD P channel transistors |
Produkt ist nicht verfügbar |
||||||||||||
RQ5E070BNTCL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 18A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 18A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 20.4mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
![]() |
RQ5H020SPTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Drain-source voltage: -45V Drain current: -2A On-state resistance: 0.28Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2842 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
RQ5H020TNTL | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ5H025TNTL | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ5H030TNTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Mounting: SMD Gate charge: 6.2nC Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Power dissipation: 1W Pulsed drain current: 12A Type of transistor: N-MOSFET Gate-source voltage: ±12V Drain-source voltage: 45V Drain current: 3A On-state resistance: 95mΩ |
Produkt ist nicht verfügbar |
||||||||||||
RQ5L015SPTL | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ5L020SNTL | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ5L030SNTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ5L035GNTCL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ5P010SNTL | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ6A050ZPTR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6 Polarisation: unipolar Drain-source voltage: -12V Drain current: -5A On-state resistance: 88mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -20A Mounting: SMD Case: TSMT6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ6E035ATTCR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.25W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ6E045BNTCR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6 Mounting: SMD Power dissipation: 1.25W Case: TSMT6 Kind of package: reel; tape Pulsed drain current: 18A Gate charge: 8.4nC Polarisation: unipolar Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 49mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ6E050ATTCR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ6E055BNTCR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ6E080AJTCR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ6E085BNTCR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RQ6L020SPTCR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Drain-source voltage: -60V Drain current: -2A On-state resistance: 266mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ6L035ATTCR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; Idm: -14A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Power dissipation: 1.25W Kind of package: reel; tape On-state resistance: 87mΩ Gate charge: 22nC Type of transistor: P-MOSFET Drain current: -6.5A Drain-source voltage: -60V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -14A Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RQ6P015SPTR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
![]() |
RR264MM-400TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 25A Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Case: SOD123F Max. off-state voltage: 0.4kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 25A Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2660 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
RR601BM4SFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.1V Case: DPAK Kind of package: reel; tape Max. forward impulse current: 40A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RR601BM4STL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.1V Case: DPAK Kind of package: reel; tape Max. forward impulse current: 40A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
![]() |
RRD07MM4STR | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Case: SOD123F Max. off-state voltage: 0.4kV Max. forward voltage: 0.98V Load current: 0.7A Semiconductor structure: single diode Max. forward impulse current: 150A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
RRE02VSM4STR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RRE02VSM6STR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RRE02VTM4SFHTR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RRE02VTM6SFHTR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RRE04EA4DFHTR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RRE04EA6DTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.4A; SOT25T; Ufmax: 1.1V; Ifsm: 2A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Case: SOT25T Semiconductor structure: double independent Load current: 0.4A Max. forward impulse current: 2A Max. off-state voltage: 0.6kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
RRE07VSM4STR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RRE07VSM6STR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RRE07VTM4SFHTR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
RRE07VTM6SFHTR | ROHM SEMICONDUCTOR |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
![]() |
RRF015P03TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 0.8W; SOT323F Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 0.8W Case: SOT323F Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 3.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1065 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
![]() |
RRH050P03GZETB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8 Power dissipation: 2W Case: SOP8 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Pulsed drain current: -20A Gate charge: 17nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 50mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
RRH090P03TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8 Mounting: SMD Drain-source voltage: -30V Drain current: -9A On-state resistance: 15.4mΩ Type of transistor: P-MOSFET Case: SOP8 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -36A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
RRH100P03GZETB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8 Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 68nC Kind of channel: enhanced Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Pulsed drain current: -40A Type of transistor: P-MOSFET Drain current: -10A Drain-source voltage: -30V Power dissipation: 2W Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
RRH100P03TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8 Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 68nC Kind of channel: enhanced Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Pulsed drain current: -40A Type of transistor: P-MOSFET Drain current: -10A Drain-source voltage: -30V Power dissipation: 2W Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
RRH140P03GZETB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14A Pulsed drain current: -56A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
RRH140P03TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -14A Pulsed drain current: -56A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
RQ3G150GNTB |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Power dissipation: 20W
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Gate charge: 24.1nC
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Power dissipation: 20W
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Gate charge: 24.1nC
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ3L050GNTB |
Hersteller: ROHM SEMICONDUCTOR
RQ3L050GNTB SMD N channel transistors
RQ3L050GNTB SMD N channel transistors
Produkt ist nicht verfügbar
RQ3L070ATTB |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ3L070ATTB SMD P channel transistors
RQ3L070ATTB SMD P channel transistors
Produkt ist nicht verfügbar
RQ3L090GNTB |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 36A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 36A; 20W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 36A
Power dissipation: 20W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
RQ3P300BHTB1 |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 40A; 32W; HSMT8
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 39A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: HSMT8
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 40A; 32W; HSMT8
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 39A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Gate charge: 36nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Case: HSMT8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
RQ5A020ZPTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; Idm: -6A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -6A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; Idm: -6A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -6A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RQ5A030APTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ5A030APTL SMD P channel transistors
RQ5A030APTL SMD P channel transistors
Produkt ist nicht verfügbar
RQ5A040ZPTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ5A040ZPTL SMD P channel transistors
RQ5A040ZPTL SMD P channel transistors
Produkt ist nicht verfügbar
RQ5C035BCTCL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ5C035BCTCL SMD P channel transistors
RQ5C035BCTCL SMD P channel transistors
Produkt ist nicht verfügbar
RQ5C060BCTCL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±8V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±8V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ5E015RPTL |
Hersteller: ROHM SEMICONDUCTOR
RQ5E015RPTL SMD P channel transistors
RQ5E015RPTL SMD P channel transistors
Produkt ist nicht verfügbar
RQ5E025TNTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ5E025TNTL SMD N channel transistors
RQ5E025TNTL SMD N channel transistors
Produkt ist nicht verfügbar
RQ5E030AJTCL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 6A; 1W; TSMT3
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 6A
Case: TSMT3
Drain-source voltage: 30V
Drain current: 3A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; Idm: 6A; 1W; TSMT3
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 6A
Case: TSMT3
Drain-source voltage: 30V
Drain current: 3A
On-state resistance: 109mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RQ5E030RPTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; TSMT3
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Case: TSMT3
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 0.125Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1W; TSMT3
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Case: TSMT3
Drain-source voltage: -30V
Drain current: -3A
On-state resistance: 0.125Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ5E035ATTCL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RQ5E035BNTCL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RQ5E040AJTCL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 16A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 54mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 16A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ5E040TNTL |
![]() ![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ5E040TNTL SMD N channel transistors
RQ5E040TNTL SMD N channel transistors
Produkt ist nicht verfügbar
RQ5E050ATTCL |
Hersteller: ROHM SEMICONDUCTOR
RQ5E050ATTCL SMD P channel transistors
RQ5E050ATTCL SMD P channel transistors
Produkt ist nicht verfügbar
RQ5E070BNTCL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 18A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 18A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 20.4mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ5H020SPTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Drain-source voltage: -45V
Drain current: -2A
On-state resistance: 0.28Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -2A; Idm: -8A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Drain-source voltage: -45V
Drain current: -2A
On-state resistance: 0.28Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2842 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
198+ | 0.36 EUR |
272+ | 0.26 EUR |
353+ | 0.2 EUR |
374+ | 0.19 EUR |
RQ5H020TNTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ5H020TNTL SMD N channel transistors
RQ5H020TNTL SMD N channel transistors
Produkt ist nicht verfügbar
RQ5H025TNTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ5H025TNTL SMD N channel transistors
RQ5H025TNTL SMD N channel transistors
Produkt ist nicht verfügbar
RQ5H030TNTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Mounting: SMD
Gate charge: 6.2nC
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 1W
Pulsed drain current: 12A
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Drain-source voltage: 45V
Drain current: 3A
On-state resistance: 95mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Mounting: SMD
Gate charge: 6.2nC
Case: TSMT3
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 1W
Pulsed drain current: 12A
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Drain-source voltage: 45V
Drain current: 3A
On-state resistance: 95mΩ
Produkt ist nicht verfügbar
RQ5L015SPTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ5L015SPTL SMD P channel transistors
RQ5L015SPTL SMD P channel transistors
Produkt ist nicht verfügbar
RQ5L020SNTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ5L020SNTL SMD N channel transistors
RQ5L020SNTL SMD N channel transistors
Produkt ist nicht verfügbar
RQ5L030SNTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ5L035GNTCL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ5P010SNTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ5P010SNTL SMD N channel transistors
RQ5P010SNTL SMD N channel transistors
Produkt ist nicht verfügbar
RQ6A050ZPTR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 88mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -20A
Mounting: SMD
Case: TSMT6
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 88mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -20A
Mounting: SMD
Case: TSMT6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ6E035ATTCR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RQ6E045BNTCR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6
Mounting: SMD
Power dissipation: 1.25W
Case: TSMT6
Kind of package: reel; tape
Pulsed drain current: 18A
Gate charge: 8.4nC
Polarisation: unipolar
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6
Mounting: SMD
Power dissipation: 1.25W
Case: TSMT6
Kind of package: reel; tape
Pulsed drain current: 18A
Gate charge: 8.4nC
Polarisation: unipolar
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ6E050ATTCR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ6E050ATTCR SMD P channel transistors
RQ6E050ATTCR SMD P channel transistors
Produkt ist nicht verfügbar
RQ6E055BNTCR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ6E055BNTCR SMD N channel transistors
RQ6E055BNTCR SMD N channel transistors
Produkt ist nicht verfügbar
RQ6E080AJTCR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ6E080AJTCR SMD N channel transistors
RQ6E080AJTCR SMD N channel transistors
Produkt ist nicht verfügbar
RQ6E085BNTCR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ6E085BNTCR SMD N channel transistors
RQ6E085BNTCR SMD N channel transistors
Produkt ist nicht verfügbar
RQ6L020SPTCR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 266mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; Idm: -8A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 266mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ6L035ATTCR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; Idm: -14A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Power dissipation: 1.25W
Kind of package: reel; tape
On-state resistance: 87mΩ
Gate charge: 22nC
Type of transistor: P-MOSFET
Drain current: -6.5A
Drain-source voltage: -60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; Idm: -14A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Power dissipation: 1.25W
Kind of package: reel; tape
On-state resistance: 87mΩ
Gate charge: 22nC
Type of transistor: P-MOSFET
Drain current: -6.5A
Drain-source voltage: -60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -14A
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RQ6P015SPTR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RQ6P015SPTR SMD P channel transistors
RQ6P015SPTR SMD P channel transistors
Produkt ist nicht verfügbar
RR264MM-400TR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 25A
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 25A
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2660 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
605+ | 0.12 EUR |
660+ | 0.11 EUR |
895+ | 0.08 EUR |
945+ | 0.076 EUR |
RR601BM4SFHTL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 40A
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 40A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RR601BM4STL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 40A
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 40A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RRD07MM4STR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 0.4kV
Max. forward voltage: 0.98V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD123F
Max. off-state voltage: 0.4kV
Max. forward voltage: 0.98V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RRE02VSM4STR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RRE02VSM4STR SMD universal diodes
RRE02VSM4STR SMD universal diodes
Produkt ist nicht verfügbar
RRE02VSM6STR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RRE02VSM6STR SMD universal diodes
RRE02VSM6STR SMD universal diodes
Produkt ist nicht verfügbar
RRE02VTM4SFHTR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RRE02VTM4SFHTR SMD universal diodes
RRE02VTM4SFHTR SMD universal diodes
Produkt ist nicht verfügbar
RRE02VTM6SFHTR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RRE02VTM6SFHTR SMD universal diodes
RRE02VTM6SFHTR SMD universal diodes
Produkt ist nicht verfügbar
RRE04EA4DFHTR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RRE04EA4DFHTR SMD universal diodes
RRE04EA4DFHTR SMD universal diodes
Produkt ist nicht verfügbar
RRE04EA6DTR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.4A; SOT25T; Ufmax: 1.1V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOT25T
Semiconductor structure: double independent
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.4A; SOT25T; Ufmax: 1.1V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: SOT25T
Semiconductor structure: double independent
Load current: 0.4A
Max. forward impulse current: 2A
Max. off-state voltage: 0.6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RRE07VSM4STR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RRE07VSM4STR SMD universal diodes
RRE07VSM4STR SMD universal diodes
Produkt ist nicht verfügbar
RRE07VSM6STR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RRE07VSM6STR SMD universal diodes
RRE07VSM6STR SMD universal diodes
Produkt ist nicht verfügbar
RRE07VTM4SFHTR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RRE07VTM4SFHTR SMD universal diodes
RRE07VTM4SFHTR SMD universal diodes
Produkt ist nicht verfügbar
RRE07VTM6SFHTR |
![]() |
Hersteller: ROHM SEMICONDUCTOR
RRE07VTM6SFHTR SMD universal diodes
RRE07VTM6SFHTR SMD universal diodes
Produkt ist nicht verfügbar
RRF015P03TL |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 0.8W; SOT323F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.8W
Case: SOT323F
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 0.8W; SOT323F
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.8W
Case: SOT323F
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1065 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
325+ | 0.22 EUR |
340+ | 0.21 EUR |
430+ | 0.17 EUR |
455+ | 0.16 EUR |
RRH050P03GZETB |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8
Power dissipation: 2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Pulsed drain current: -20A
Gate charge: 17nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8
Power dissipation: 2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Pulsed drain current: -20A
Gate charge: 17nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RRH090P03TB1 |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Case: SOP8
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8
Mounting: SMD
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Case: SOP8
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 56nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RRH100P03GZETB |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 68nC
Kind of channel: enhanced
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Pulsed drain current: -40A
Type of transistor: P-MOSFET
Drain current: -10A
Drain-source voltage: -30V
Power dissipation: 2W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 68nC
Kind of channel: enhanced
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Pulsed drain current: -40A
Type of transistor: P-MOSFET
Drain current: -10A
Drain-source voltage: -30V
Power dissipation: 2W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RRH100P03TB1 |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 68nC
Kind of channel: enhanced
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Pulsed drain current: -40A
Type of transistor: P-MOSFET
Drain current: -10A
Drain-source voltage: -30V
Power dissipation: 2W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 68nC
Kind of channel: enhanced
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Pulsed drain current: -40A
Type of transistor: P-MOSFET
Drain current: -10A
Drain-source voltage: -30V
Power dissipation: 2W
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RRH140P03GZETB |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
RRH140P03TB1 |
![]() |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -56A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar