Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (98637) > Seite 1465 nach 1644
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| RGS00TS65DHRC11 | ROHM SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 163W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 58nC Kind of package: tube Turn-on time: 70ns Turn-off time: 292ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGS00TS65EHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 163W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 58nC Kind of package: tube Turn-on time: 70ns Turn-off time: 299ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGS50TSX2DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Mounting: THT Turn-on time: 53ns Turn-off time: 345ns Type of transistor: IGBT Power dissipation: 197W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 67nC Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGS50TSX2HRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3 Mounting: THT Turn-on time: 53ns Turn-off time: 345ns Type of transistor: IGBT Power dissipation: 197W Kind of package: tube Gate charge: 67nC Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 75A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 36nC Kind of package: tube Turn-on time: 46ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 430 Stücke: Lieferzeit 7-14 Tag (e) |
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| RGS80TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3 Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 62ns Turn-off time: 291ns Type of transistor: IGBT Power dissipation: 136W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 48nC Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGS80TSX2DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 104nC Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGS80TSX2HRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Gate charge: 104nC Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT16BM65DTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO252 Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: TO252 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT16NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO263 Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: TO263 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT16NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; LPDS Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: LPDS Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT30NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 66W; TO263 Mounting: SMD Kind of package: reel; tape Case: TO263 Power dissipation: 66W Gate charge: 32nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 40ns Turn-off time: 204ns Gate-emitter voltage: ±30V Collector current: 15A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT30TM65DGC9 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 8A; 16W; TO220NFM Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 16W Case: TO220NFM Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 40ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT40NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 20A; 70W; LPDS Mounting: SMD Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 60A Type of transistor: IGBT Turn-on time: 51ns Kind of package: reel; tape Case: LPDS Turn-off time: 204ns Gate-emitter voltage: ±30V Collector current: 20A Collector-emitter voltage: 650V Power dissipation: 70W Gate charge: 40nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT50NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT50NS65DGC9 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO262 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT50NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT50TM65DGC9 | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Collector-emitter voltage: 650V Power dissipation: 23W Gate charge: 49nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 75A Type of transistor: IGBT Turn-on time: 65ns Kind of package: tube Case: TO220NFM Turn-off time: 210ns Gate-emitter voltage: ±30V Collector current: 13A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT8BM65DTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 31W; TO252 Case: TO252 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 8A Pulsed collector current: 12A Turn-on time: 54ns Turn-off time: 158ns Type of transistor: IGBT Power dissipation: 31W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 13.5nC Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGTH00TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 200A Turn-on time: 102ns Turn-off time: 221ns Type of transistor: IGBT Power dissipation: 138W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 94nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGTH40TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 80A Turn-on time: 47ns Turn-off time: 141ns Type of transistor: IGBT Power dissipation: 72W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 20A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 40nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGTH40TS65GC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 80A Turn-on time: 47ns Turn-off time: 141ns Type of transistor: IGBT Power dissipation: 72W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 20A Gate charge: 40nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGTH50TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 100A Turn-on time: 65ns Turn-off time: 172ns Type of transistor: IGBT Power dissipation: 87W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 25A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 49nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGTH80TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 160A Turn-on time: 84ns Turn-off time: 194ns Type of transistor: IGBT Power dissipation: 117W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 79nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGTV00TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 200A Turn-on time: 62ns Turn-off time: 247ns Type of transistor: IGBT Power dissipation: 138W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 104nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGTV60TK65DGVC11 | ROHM SEMICONDUCTOR |
RGTV60TK65DGVC11 THT IGBT transistors |
Produkt ist nicht verfügbar |
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| RGTVX6TS65GC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 320A Turn-on time: 83ns Turn-off time: 298ns Type of transistor: IGBT Power dissipation: 202W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 80A Gate charge: 171nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGW80TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 160A Turn-on time: 59ns Turn-off time: 228ns Type of transistor: IGBT Power dissipation: 107W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 110nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGWX5TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 174W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 300A Turn-on time: 93ns Turn-off time: 305ns Type of transistor: IGBT Power dissipation: 174W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 75A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 213nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RHK003N06FRAT146 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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RHP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 921 Stücke: Lieferzeit 7-14 Tag (e) |
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| RHP020N06T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RHP030N03T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 10A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RHU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: UMT3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| RHU003N03FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: UMT3 Gate-source voltage: ±20V On-state resistance: 2.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| RJ1G12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 165nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 40V Drain current: 120A On-state resistance: 2.08mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| RJ1L12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 192W Polarisation: unipolar Gate charge: 175nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 60V Drain current: 120A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| RJ1P12BBDTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 100V Drain current: 120A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| RJK005N03FRAT146 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±12V On-state resistance: 940mΩ Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| RJP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RJP020N06T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RJU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD On-state resistance: 3.1Ω Type of transistor: N-MOSFET Case: UMT3 Power dissipation: 0.2W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.8A Drain-source voltage: 60V Drain current: 0.2A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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RJU003N03FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.3A; Idm: 1.2A; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SC70; SOT323 Gate-source voltage: ±12V On-state resistance: 1.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| RK7002AT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3 Case: SST3 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.2W Polarisation: unipolar Gate charge: 3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A Drain-source voltage: 60V Drain current: 0.3A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| RK7002BMHZGT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.35W Case: SST3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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RK7002BMT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Power dissipation: 200/350mW Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Drain-source voltage: 60V Drain current: 0.25A On-state resistance: 2.4Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 20 Stücke |
auf Bestellung 4040 Stücke: Lieferzeit 7-14 Tag (e) |
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RN141CMT2R | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF Mounting: SMD Capacitance: 0.8pF Leakage current: 0.1µA Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Case: SOD923 Max. off-state voltage: 50V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode Anzahl je Verpackung: 10 Stücke |
auf Bestellung 7870 Stücke: Lieferzeit 7-14 Tag (e) |
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RN142SMT2R | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 60V; 0.1A; SC79,SOD523; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 60V Load current: 0.1A Case: SC79; SOD523 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.45pF Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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RN731VTE-17 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC90A; SOD323F Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.4pF Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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RN739DT146 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; 100mW; SC59,SOT346; double series Mounting: SMD Case: SC59; SOT346 Capacitance: 0.4pF Max. off-state voltage: 50V Max. forward voltage: 1V Load current: 50mA Semiconductor structure: double series Leakage current: 0.1µA Power dissipation: 0.1W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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RN739FT106 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; 100mW; SC70,SOT323; double series Mounting: SMD Case: SC70; SOT323 Capacitance: 0.4pF Max. off-state voltage: 50V Max. forward voltage: 1V Load current: 50mA Semiconductor structure: double series Leakage current: 0.1µA Power dissipation: 0.1W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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RN771VTE-17 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC90A; SOD323F Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.9pF Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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RN779FT106 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; SC70,SOT323; double series; Ufmax: 1V Type of diode: switching Max. off-state voltage: 50V Load current: 50mA Case: SC70; SOT323 Mounting: SMD Semiconductor structure: double series Features of semiconductor devices: PIN; RF Max. forward voltage: 1V Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 0.9pF Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| RQ1A060ZPTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -24A; 1.5W; TSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6A Pulsed drain current: -24A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 78mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RQ1A070APTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.5W Case: TSMT8 On-state resistance: 48mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RQ1A070ZPFRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 38mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RQ1C075UNTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 30A; 1.5W; TSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 30A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 40mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RQ1E070RPTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.5W; TSMT8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RQ1E075XNTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 1.5W; TSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Pulsed drain current: 30A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RQ3C150BCTB | ROHM SEMICONDUCTOR |
RQ3C150BCTB SMD P channel transistors |
Produkt ist nicht verfügbar |
| RGS00TS65DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 292ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 292ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGS00TS65EHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 299ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGS50TSX2DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Mounting: THT
Turn-on time: 53ns
Turn-off time: 345ns
Type of transistor: IGBT
Power dissipation: 197W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Mounting: THT
Turn-on time: 53ns
Turn-off time: 345ns
Type of transistor: IGBT
Power dissipation: 197W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGS50TSX2HRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Mounting: THT
Turn-on time: 53ns
Turn-off time: 345ns
Type of transistor: IGBT
Power dissipation: 197W
Kind of package: tube
Gate charge: 67nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 197W; TO247-3
Mounting: THT
Turn-on time: 53ns
Turn-off time: 345ns
Type of transistor: IGBT
Power dissipation: 197W
Kind of package: tube
Gate charge: 67nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 25A
Pulsed collector current: 75A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGS60TS65DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.55 EUR |
| 14+ | 5.15 EUR |
| 450+ | 4.95 EUR |
| RGS80TS65DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 62ns
Turn-off time: 291ns
Type of transistor: IGBT
Power dissipation: 136W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 62ns
Turn-off time: 291ns
Type of transistor: IGBT
Power dissipation: 136W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGS80TSX2DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGS80TSX2HRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Gate charge: 104nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Gate charge: 104nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT16BM65DTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO252
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO252
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT16NL65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO263
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO263
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT16NS65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: LPDS
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: LPDS
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT30NL65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 66W; TO263
Mounting: SMD
Kind of package: reel; tape
Case: TO263
Power dissipation: 66W
Gate charge: 32nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 40ns
Turn-off time: 204ns
Gate-emitter voltage: ±30V
Collector current: 15A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 66W; TO263
Mounting: SMD
Kind of package: reel; tape
Case: TO263
Power dissipation: 66W
Gate charge: 32nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 40ns
Turn-off time: 204ns
Gate-emitter voltage: ±30V
Collector current: 15A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT30TM65DGC9 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 16W; TO220NFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 16W
Case: TO220NFM
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 16W; TO220NFM
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 16W
Case: TO220NFM
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 204ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT40NS65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 70W; LPDS
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 51ns
Kind of package: reel; tape
Case: LPDS
Turn-off time: 204ns
Gate-emitter voltage: ±30V
Collector current: 20A
Collector-emitter voltage: 650V
Power dissipation: 70W
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 70W; LPDS
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Type of transistor: IGBT
Turn-on time: 51ns
Kind of package: reel; tape
Case: LPDS
Turn-off time: 204ns
Gate-emitter voltage: ±30V
Collector current: 20A
Collector-emitter voltage: 650V
Power dissipation: 70W
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT50NL65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO263
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT50NS65DGC9 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: TO262
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT50NS65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 97W; LPDS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 97W
Case: LPDS
Gate-emitter voltage: ±30V
Pulsed collector current: 75A
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Turn-on time: 65ns
Turn-off time: 210ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT50TM65DGC9 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Collector-emitter voltage: 650V
Power dissipation: 23W
Gate charge: 49nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 65ns
Kind of package: tube
Case: TO220NFM
Turn-off time: 210ns
Gate-emitter voltage: ±30V
Collector current: 13A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Collector-emitter voltage: 650V
Power dissipation: 23W
Gate charge: 49nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 65ns
Kind of package: tube
Case: TO220NFM
Turn-off time: 210ns
Gate-emitter voltage: ±30V
Collector current: 13A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGT8BM65DTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 31W; TO252
Case: TO252
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 8A
Pulsed collector current: 12A
Turn-on time: 54ns
Turn-off time: 158ns
Type of transistor: IGBT
Power dissipation: 31W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 13.5nC
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 31W; TO252
Case: TO252
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 8A
Pulsed collector current: 12A
Turn-on time: 54ns
Turn-off time: 158ns
Type of transistor: IGBT
Power dissipation: 31W
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 13.5nC
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGTH00TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 200A
Turn-on time: 102ns
Turn-off time: 221ns
Type of transistor: IGBT
Power dissipation: 138W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 94nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 200A
Turn-on time: 102ns
Turn-off time: 221ns
Type of transistor: IGBT
Power dissipation: 138W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 94nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGTH40TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGTH40TS65GC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 80A
Turn-on time: 47ns
Turn-off time: 141ns
Type of transistor: IGBT
Power dissipation: 72W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGTH50TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 100A
Turn-on time: 65ns
Turn-off time: 172ns
Type of transistor: IGBT
Power dissipation: 87W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 25A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 100A
Turn-on time: 65ns
Turn-off time: 172ns
Type of transistor: IGBT
Power dissipation: 87W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 25A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 49nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGTH80TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 160A
Turn-on time: 84ns
Turn-off time: 194ns
Type of transistor: IGBT
Power dissipation: 117W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 79nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 117W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 160A
Turn-on time: 84ns
Turn-off time: 194ns
Type of transistor: IGBT
Power dissipation: 117W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 79nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGTV00TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 200A
Turn-on time: 62ns
Turn-off time: 247ns
Type of transistor: IGBT
Power dissipation: 138W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 200A
Turn-on time: 62ns
Turn-off time: 247ns
Type of transistor: IGBT
Power dissipation: 138W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGTV60TK65DGVC11 |
|
Hersteller: ROHM SEMICONDUCTOR
RGTV60TK65DGVC11 THT IGBT transistors
RGTV60TK65DGVC11 THT IGBT transistors
Produkt ist nicht verfügbar
| RGTVX6TS65GC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 320A
Turn-on time: 83ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 202W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 80A
Gate charge: 171nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 202W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 320A
Turn-on time: 83ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 202W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 80A
Gate charge: 171nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGW80TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 160A
Turn-on time: 59ns
Turn-off time: 228ns
Type of transistor: IGBT
Power dissipation: 107W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 110nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 107W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 160A
Turn-on time: 59ns
Turn-off time: 228ns
Type of transistor: IGBT
Power dissipation: 107W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 110nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RGWX5TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 174W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 300A
Turn-on time: 93ns
Turn-off time: 305ns
Type of transistor: IGBT
Power dissipation: 174W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 213nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 174W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 300A
Turn-on time: 93ns
Turn-off time: 305ns
Type of transistor: IGBT
Power dissipation: 174W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 213nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RHK003N06FRAT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RHP020N06FRAT100 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 921 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 176+ | 0.41 EUR |
| 198+ | 0.36 EUR |
| 214+ | 0.33 EUR |
| 227+ | 0.32 EUR |
| 1000+ | 0.3 EUR |
| RHP020N06T100 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RHP030N03T100 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RHU002N06FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| RHU003N03FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 1.2A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 2.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| RJ1G12BGNTLL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2.08mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2.08mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| RJ1L12BGNTLL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| RJ1P12BBDTLL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| RJK005N03FRAT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±12V
On-state resistance: 940mΩ
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; Idm: 2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±12V
On-state resistance: 940mΩ
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RJP020N06FRAT100 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RJP020N06T100 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RJU002N06FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
On-state resistance: 3.1Ω
Type of transistor: N-MOSFET
Case: UMT3
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 60V
Drain current: 0.2A
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
On-state resistance: 3.1Ω
Type of transistor: N-MOSFET
Case: UMT3
Power dissipation: 0.2W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 0.8A
Drain-source voltage: 60V
Drain current: 0.2A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RJU003N03FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.3A; Idm: 1.2A; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 1.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.3A; Idm: 1.2A; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 1.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RK7002AT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Case: SST3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: unipolar
Gate charge: 3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SST3
Case: SST3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: unipolar
Gate charge: 3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.3A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| RK7002BMHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
| RK7002BMT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Power dissipation: 200/350mW
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 60V
Drain current: 0.25A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 20 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 200/350mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Power dissipation: 200/350mW
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 60V
Drain current: 0.25A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 20 Stücke
auf Bestellung 4040 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1280+ | 0.056 EUR |
| 1760+ | 0.041 EUR |
| 2080+ | 0.035 EUR |
| 2180+ | 0.033 EUR |
| 12000+ | 0.032 EUR |
| RN141CMT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF
Mounting: SMD
Capacitance: 0.8pF
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Case: SOD923
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Anzahl je Verpackung: 10 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF
Mounting: SMD
Capacitance: 0.8pF
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Case: SOD923
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Anzahl je Verpackung: 10 Stücke
auf Bestellung 7870 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 650+ | 0.11 EUR |
| 700+ | 0.1 EUR |
| 850+ | 0.085 EUR |
| 900+ | 0.08 EUR |
| 8000+ | 0.077 EUR |
| RN142SMT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 60V; 0.1A; SC79,SOD523; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 60V
Load current: 0.1A
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.45pF
Anzahl je Verpackung: 20 Stücke
Category: Diodes - others
Description: Diode: switching; 60V; 0.1A; SC79,SOD523; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 60V
Load current: 0.1A
Case: SC79; SOD523
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.45pF
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
| RN731VTE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.4pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.4pF
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RN739DT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; 100mW; SC59,SOT346; double series
Mounting: SMD
Case: SC59; SOT346
Capacitance: 0.4pF
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 50mA
Semiconductor structure: double series
Leakage current: 0.1µA
Power dissipation: 0.1W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; 100mW; SC59,SOT346; double series
Mounting: SMD
Case: SC59; SOT346
Capacitance: 0.4pF
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 50mA
Semiconductor structure: double series
Leakage current: 0.1µA
Power dissipation: 0.1W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RN739FT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; 100mW; SC70,SOT323; double series
Mounting: SMD
Case: SC70; SOT323
Capacitance: 0.4pF
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 50mA
Semiconductor structure: double series
Leakage current: 0.1µA
Power dissipation: 0.1W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; 100mW; SC70,SOT323; double series
Mounting: SMD
Case: SC70; SOT323
Capacitance: 0.4pF
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 50mA
Semiconductor structure: double series
Leakage current: 0.1µA
Power dissipation: 0.1W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RN771VTE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC90A,SOD323F; single diode; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC90A; SOD323F
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RN779FT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC70,SOT323; double series; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70; SOT323
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
Anzahl je Verpackung: 5 Stücke
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; SC70,SOT323; double series; Ufmax: 1V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 50mA
Case: SC70; SOT323
Mounting: SMD
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1V
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 0.9pF
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| RQ1A060ZPTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -24A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; Idm: -24A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RQ1A070APTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RQ1A070ZPFRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RQ1C075UNTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 30A; 1.5W; TSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 30A; 1.5W; TSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RQ1E070RPTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.5W; TSMT8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RQ1E075XNTCR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 1.5W; TSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 30A; 1.5W; TSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 30A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| RQ3C150BCTB |
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Hersteller: ROHM SEMICONDUCTOR
RQ3C150BCTB SMD P channel transistors
RQ3C150BCTB SMD P channel transistors
Produkt ist nicht verfügbar