Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (97632) > Seite 1618 nach 1628
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMN10T108 | ROHM SEMICONDUCTOR |
 Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT457; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Max. off-state voltage: 80V Max. forward voltage: 1.2V Load current: 0.1A Max. load current: 0.3A Semiconductor structure: triple independent Case: SOT457 Mounting: SMD Features of semiconductor devices: fast switching Max. forward impulse current: 4A Kind of package: reel; tape Reverse recovery time: 4ns Power dissipation: 0.3W |
auf Bestellung 2994 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| RFN10BM3SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 10A Reverse recovery time: 30ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.5V Max. forward impulse current: 80A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||
| RFN10BM3STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 10A Reverse recovery time: 30ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.5V Max. forward impulse current: 80A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||
| RFN10BM6SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Reverse recovery time: 50ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.55V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||
| RFN10BM6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Reverse recovery time: 50ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.55V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||
| RFN1LAM6STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V Mounting: SMD Max. forward impulse current: 15A Case: SOD128 Kind of package: reel; tape Load current: 0.8A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 35ns Max. forward voltage: 1.45V Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
||||||||||||||
 |
RFN1LAM6STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V Mounting: SMD Max. forward impulse current: 15A Case: SOD128 Kind of package: reel; tape Load current: 0.8A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 35ns Max. forward voltage: 1.45V Max. off-state voltage: 0.6kV |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| SCT3017ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 118A Pulsed drain current: 295A Power dissipation: 428W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 22.1mΩ Mounting: THT Gate charge: 172nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3017ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Mounting: THT On-state resistance: 22.1mΩ Type of transistor: N-MOSFET Power dissipation: 428W Polarisation: unipolar Kind of package: tube Gate charge: 172nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 295A Case: TO247 Drain-source voltage: 650V Drain current: 118A |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3022ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3022ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Mounting: THT On-state resistance: 28.6mΩ Type of transistor: N-MOSFET Power dissipation: 339W Polarisation: unipolar Kind of package: tube Gate charge: 133nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 232A Case: TO247 Drain-source voltage: 650V Drain current: 93A |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3022KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 95A Pulsed drain current: 237A Power dissipation: 427W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3022KLHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Mounting: THT On-state resistance: 28.6mΩ Type of transistor: N-MOSFET Power dissipation: 427W Polarisation: unipolar Kind of package: tube Gate charge: 178nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 237A Case: TO247 Drain-source voltage: 1.2kV Drain current: 95A |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3030ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3030ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247 Drain-source voltage: 650V Drain current: 70A |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3030ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Mounting: THT Power dissipation: 262W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO247-4 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3030AW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W Mounting: SMD Power dissipation: 267W Polarisation: unipolar Kind of package: reel; tape Gate charge: 104nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 175A Case: TO263-7 Drain-source voltage: 650V Drain current: 70A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3030KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W Mounting: THT Power dissipation: 339W Polarisation: unipolar Kind of package: tube Gate charge: 131nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 180A Case: TO247 Drain-source voltage: 1.2kV Drain current: 72A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3030KLHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W Mounting: THT On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 339W Polarisation: unipolar Kind of package: tube Gate charge: 131nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 180A Case: TO247 Drain-source voltage: 1.2kV Drain current: 72A |
Produkt ist nicht verfügbar |
||||||||||||||
 |
SCT3040KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Power dissipation: 262W Case: TO247 On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||
| SCT3040KLHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W Mounting: THT On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 262W Polarisation: unipolar Kind of package: tube Gate charge: 107nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 137A Case: TO247 Drain-source voltage: 1.2kV Drain current: 55A |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3040KRC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Pulsed drain current: 137A Power dissipation: 262W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 52mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3040KW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 56A Pulsed drain current: 140A Power dissipation: 267W Case: TO263-7 Gate-source voltage: -4...22V On-state resistance: 52mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3080ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3080ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3105KRC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W Mounting: THT Case: TO247-4 Kind of package: tube Power dissipation: 134W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 51nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 60A Drain-source voltage: 1.2kV Drain current: 24A On-state resistance: 137mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
| SCT3120ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 52A Power dissipation: 103W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 156mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
SCT3160KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Power dissipation: 103W Case: TO247 On-state resistance: 0.16Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
RB160VAM-40TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; SOD323HE Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SOD323HE Leakage current: 50µA Max. forward impulse current: 10A |
auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
RB160VAM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.67V Case: SOD323HE Kind of package: reel; tape Max. forward impulse current: 5A |
auf Bestellung 2605 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| RB160VYM-40FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SOD323HE Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 10A |
Produkt ist nicht verfügbar |
||||||||||||||
| RB160VYM-60FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape Mounting: SMD Case: SOD323HE Max. off-state voltage: 60V Max. forward voltage: 0.67V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 10A Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
||||||||||||||
 |
SST4401HZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT23 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
SST4401T116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23 Mounting: SMD Case: SOT23 Frequency: 250MHz Kind of package: reel; tape Power dissipation: 0.2W Polarisation: bipolar Type of transistor: NPN Current gain: 20...300 Collector current: 0.6A Collector-emitter voltage: 40V |
Produkt ist nicht verfügbar |
|||||||||||||
 |
RRD07MM4STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A Mounting: SMD Case: SOD123F Kind of package: reel; tape Max. off-state voltage: 0.4kV Max. forward voltage: 0.98V Load current: 0.7A Semiconductor structure: single diode Max. forward impulse current: 150A Type of diode: rectifying |
Produkt ist nicht verfügbar |
|||||||||||||
| RD3P100SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 20A Power dissipation: 20W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 147mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| RFU02VSM8STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward impulse current: 1A Semiconductor structure: single diode Case: SOD323HE Mounting: SMD Kind of package: reel; tape Reverse recovery time: 35ns Max. forward voltage: 3V Load current: 0.2A |
Produkt ist nicht verfügbar |
||||||||||||||
| STZ6.8NT146 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC59,SOT346; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Kind of package: reel; tape Case: SC59; SOT346 Semiconductor structure: common anode; double Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
KDZVTR6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 20µA |
Produkt ist nicht verfügbar |
|||||||||||||
| CDZVT2R6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 6.8V; SMD; reel,tape; SOD923; single diode Type of diode: Zener Power dissipation: 0.1W Zener voltage: 6.8V Kind of package: reel; tape Case: SOD923 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
KDZVTFTR6.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Kind of package: reel; tape Case: SOD123F Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA |
Produkt ist nicht verfügbar |
|||||||||||||
| UDZVTE-176.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
||||||||||||||
 |
UDZVFHTE-176.8B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
|||||||||||||
 |
RB061QS-20T18R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD882; reel,tape Case: SOD882 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 20V Load current: 2A Leakage current: 0.2mA Type of diode: Schottky rectifying Max. forward impulse current: 15A Max. forward voltage: 0.47V |
auf Bestellung 14484 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| RB061US-30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; TSMD8; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: double independent Max. forward voltage: 0.4V Case: TSMD8 Kind of package: reel; tape Leakage current: 0.9mA Max. forward impulse current: 8A |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
RF01VM2SFHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V Mounting: SMD Case: SC90A; SOD323F Kind of package: reel; tape Max. load current: 0.3A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 50ns Max. forward impulse current: 1A Max. forward voltage: 1.2V Max. off-state voltage: 250V Load current: 0.1A |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
RF01VM2STE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V Mounting: SMD Case: SC90A; SOD323F Kind of package: reel; tape Max. load current: 0.3A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 50ns Max. forward impulse current: 1A Max. forward voltage: 1.2V Max. off-state voltage: 250V Load current: 0.1A |
auf Bestellung 2801 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
RB501SM-30FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape Kind of package: reel; tape Mounting: SMD Max. forward impulse current: 1A Max. forward voltage: 0.35V Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Leakage current: 10µA Case: SC79; SOD523 Type of diode: Schottky rectifying |
auf Bestellung 3900 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
RB501VM-40TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape Case: SOD323F Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 1A Max. forward voltage: 0.55V Max. off-state voltage: 40V Load current: 0.1A Semiconductor structure: single diode Leakage current: 30µA Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
|||||||||||||
 |
SML-211UTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0805; red; 0.9÷2.5mcd; 2x1.25x0.8mm; 1.8V; 2mA; Front: flat Type of diode: LED Mounting: SMD Case: 0805 LED colour: red Luminosity: 0.9...2.5mcd Dimensions: 2x1.25x0.8mm LED current: 2mA Wavelength: 615...625nm LED lens: transparent Front: flat Operating voltage: 1.8V |
Produkt ist nicht verfügbar |
|||||||||||||
| RB496KATR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOT353T; reel,tape Mounting: SMD Case: SOT353T Kind of package: reel; tape Semiconductor structure: double independent Leakage current: 0.8mA Type of diode: Schottky rectifying Max. forward impulse current: 5A Max. forward voltage: 0.43V Max. off-state voltage: 20V Load current: 1A |
Produkt ist nicht verfügbar |
||||||||||||||
| RS1P600BETB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 70A Power dissipation: 35W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 9.7mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
KDZVTFTR5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD123F Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA |
Produkt ist nicht verfügbar |
|||||||||||||
 |
RB161QS-40T18R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD882; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Max. load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.6V Case: SOD882 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 7A |
Produkt ist nicht verfügbar |
|||||||||||||
 |
QST9TR | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SC74; SOT457 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
QST8TR | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 1.5A Power dissipation: 0.5W Case: SC74; SOT457 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
Produkt ist nicht verfügbar |
|||||||||||||
| QS6U24TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -1A Pulsed drain current: -2A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| QS6U22TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
 |
QS5U13TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
QS5U33TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±20V On-state resistance: 0.225Ω Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
| IMN10T108 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT457; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Max. off-state voltage: 80V
Max. forward voltage: 1.2V
Load current: 0.1A
Max. load current: 0.3A
Semiconductor structure: triple independent
Case: SOT457
Mounting: SMD
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Kind of package: reel; tape
Reverse recovery time: 4ns
Power dissipation: 0.3W
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT457; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Max. off-state voltage: 80V
Max. forward voltage: 1.2V
Load current: 0.1A
Max. load current: 0.3A
Semiconductor structure: triple independent
Case: SOT457
Mounting: SMD
Features of semiconductor devices: fast switching
Max. forward impulse current: 4A
Kind of package: reel; tape
Reverse recovery time: 4ns
Power dissipation: 0.3W
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 173+ | 0.41 EUR |
| 196+ | 0.37 EUR |
| 229+ | 0.31 EUR |
| 242+ | 0.3 EUR |
| RFN10BM3SFHTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 10A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 10A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RFN10BM3STL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 10A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 10A; 30ns; DPAK; Ufmax: 1.5V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 10A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.5V
Max. forward impulse current: 80A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RFN10BM6SFHTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RFN10BM6STL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RFN1LAM6STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V
Mounting: SMD
Max. forward impulse current: 15A
Case: SOD128
Kind of package: reel; tape
Load current: 0.8A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V
Mounting: SMD
Max. forward impulse current: 15A
Case: SOD128
Kind of package: reel; tape
Load current: 0.8A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
| RFN1LAM6STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V
Mounting: SMD
Max. forward impulse current: 15A
Case: SOD128
Kind of package: reel; tape
Load current: 0.8A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SOD128; Ufmax: 1.45V
Mounting: SMD
Max. forward impulse current: 15A
Case: SOD128
Kind of package: reel; tape
Load current: 0.8A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.45V
Max. off-state voltage: 0.6kV
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 310+ | 0.23 EUR |
| 365+ | 0.2 EUR |
| 460+ | 0.16 EUR |
| 530+ | 0.14 EUR |
| 560+ | 0.13 EUR |
| SCT3017ALGC11 |
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SCT3017ALHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Mounting: THT
On-state resistance: 22.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
Polarisation: unipolar
Kind of package: tube
Gate charge: 172nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 295A
Case: TO247
Drain-source voltage: 650V
Drain current: 118A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Mounting: THT
On-state resistance: 22.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 428W
Polarisation: unipolar
Kind of package: tube
Gate charge: 172nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 295A
Case: TO247
Drain-source voltage: 650V
Drain current: 118A
Produkt ist nicht verfügbar
| SCT3022ALGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SCT3022ALHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Mounting: THT
On-state resistance: 28.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 133nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 232A
Case: TO247
Drain-source voltage: 650V
Drain current: 93A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Mounting: THT
On-state resistance: 28.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 133nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 232A
Case: TO247
Drain-source voltage: 650V
Drain current: 93A
Produkt ist nicht verfügbar
| SCT3022KLGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SCT3022KLHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Mounting: THT
On-state resistance: 28.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 427W
Polarisation: unipolar
Kind of package: tube
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 237A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 95A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Mounting: THT
On-state resistance: 28.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 427W
Polarisation: unipolar
Kind of package: tube
Gate charge: 178nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 237A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 95A
Produkt ist nicht verfügbar
| SCT3030ALGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SCT3030ALHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247
Drain-source voltage: 650V
Drain current: 70A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247
Drain-source voltage: 650V
Drain current: 70A
Produkt ist nicht verfügbar
| SCT3030ARC14 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247-4
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Mounting: THT
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO247-4
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SCT3030AW7TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
Mounting: SMD
Power dissipation: 267W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO263-7
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
Mounting: SMD
Power dissipation: 267W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 104nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 175A
Case: TO263-7
Drain-source voltage: 650V
Drain current: 70A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SCT3030KLGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Mounting: THT
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 131nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 180A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 72A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Mounting: THT
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 131nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 180A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 72A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SCT3030KLHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Mounting: THT
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 131nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 180A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 72A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Mounting: THT
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 339W
Polarisation: unipolar
Kind of package: tube
Gate charge: 131nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 180A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 72A
Produkt ist nicht verfügbar
| SCT3040KLGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Power dissipation: 262W
Case: TO247
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Power dissipation: 262W
Case: TO247
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SCT3040KLHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W
Mounting: THT
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 107nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 137A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 55A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W
Mounting: THT
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 262W
Polarisation: unipolar
Kind of package: tube
Gate charge: 107nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 137A
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 55A
Produkt ist nicht verfügbar
| SCT3040KRC14 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Pulsed drain current: 137A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 137A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Pulsed drain current: 137A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| SCT3040KW7TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 56A
Pulsed drain current: 140A
Power dissipation: 267W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 56A; Idm: 140A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 56A
Pulsed drain current: 140A
Power dissipation: 267W
Case: TO263-7
Gate-source voltage: -4...22V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SCT3080ALGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SCT3080ARC14 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| SCT3105KRC14 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W
Mounting: THT
Case: TO247-4
Kind of package: tube
Power dissipation: 134W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 60A
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W
Mounting: THT
Case: TO247-4
Kind of package: tube
Power dissipation: 134W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 51nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 60A
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SCT3120ALGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 52A
Power dissipation: 103W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 156mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SCT3160KLGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 103W
Case: TO247
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 103W
Case: TO247
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 21.31 EUR |
| 6+ | 13.21 EUR |
| RB160VAM-40TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; SOD323HE
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD323HE
Leakage current: 50µA
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; SOD323HE
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD323HE
Leakage current: 50µA
Max. forward impulse current: 10A
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 642+ | 0.11 EUR |
| 797+ | 0.09 EUR |
| 986+ | 0.073 EUR |
| 1043+ | 0.069 EUR |
| RB160VAM-60TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Case: SOD323HE
Kind of package: reel; tape
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Case: SOD323HE
Kind of package: reel; tape
Max. forward impulse current: 5A
auf Bestellung 2605 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 325+ | 0.22 EUR |
| 795+ | 0.09 EUR |
| 900+ | 0.08 EUR |
| 1005+ | 0.071 EUR |
| 1065+ | 0.067 EUR |
| 1500+ | 0.066 EUR |
| RB160VYM-40FHTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD323HE; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SOD323HE
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
| RB160VYM-60FHTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape
Mounting: SMD
Case: SOD323HE
Max. off-state voltage: 60V
Max. forward voltage: 0.67V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD323HE; reel,tape
Mounting: SMD
Case: SOD323HE
Max. off-state voltage: 60V
Max. forward voltage: 0.67V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 10A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
| SST4401HZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
| SST4401T116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 20...300
Collector current: 0.6A
Collector-emitter voltage: 40V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 200mW; SOT23
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 20...300
Collector current: 0.6A
Collector-emitter voltage: 40V
Produkt ist nicht verfügbar
| RRD07MM4STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. off-state voltage: 0.4kV
Max. forward voltage: 0.98V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. off-state voltage: 0.4kV
Max. forward voltage: 0.98V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Type of diode: rectifying
Produkt ist nicht verfügbar
| RD3P100SNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 20W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RFU02VSM8STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1A
Semiconductor structure: single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward voltage: 3V
Load current: 0.2A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.2A; 35ns; SOD323HE; Ufmax: 3V
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1A
Semiconductor structure: single diode
Case: SOD323HE
Mounting: SMD
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward voltage: 3V
Load current: 0.2A
Produkt ist nicht verfügbar
| STZ6.8NT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC59,SOT346; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SC59; SOT346
Semiconductor structure: common anode; double
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC59,SOT346; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SC59; SOT346
Semiconductor structure: common anode; double
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| KDZVTR6.8B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
Produkt ist nicht verfügbar
| CDZVT2R6.8B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 6.8V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 6.8V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| KDZVTFTR6.8B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 6.8V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Produkt ist nicht verfügbar
| UDZVTE-176.8B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| UDZVFHTE-176.8B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| RB061QS-20T18R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD882; reel,tape
Case: SOD882
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 20V
Load current: 2A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. forward impulse current: 15A
Max. forward voltage: 0.47V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; SOD882; reel,tape
Case: SOD882
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 20V
Load current: 2A
Leakage current: 0.2mA
Type of diode: Schottky rectifying
Max. forward impulse current: 15A
Max. forward voltage: 0.47V
auf Bestellung 14484 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 325+ | 0.22 EUR |
| 440+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 545+ | 0.13 EUR |
| 580+ | 0.12 EUR |
| RB061US-30TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; TSMD8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: double independent
Max. forward voltage: 0.4V
Case: TSMD8
Kind of package: reel; tape
Leakage current: 0.9mA
Max. forward impulse current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; TSMD8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: double independent
Max. forward voltage: 0.4V
Case: TSMD8
Kind of package: reel; tape
Leakage current: 0.9mA
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
| RF01VM2SFHTE-17 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Mounting: SMD
Case: SC90A; SOD323F
Kind of package: reel; tape
Max. load current: 0.3A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Max. forward voltage: 1.2V
Max. off-state voltage: 250V
Load current: 0.1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Mounting: SMD
Case: SC90A; SOD323F
Kind of package: reel; tape
Max. load current: 0.3A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Max. forward voltage: 1.2V
Max. off-state voltage: 250V
Load current: 0.1A
Produkt ist nicht verfügbar
| RF01VM2STE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Mounting: SMD
Case: SC90A; SOD323F
Kind of package: reel; tape
Max. load current: 0.3A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Max. forward voltage: 1.2V
Max. off-state voltage: 250V
Load current: 0.1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 250V; 0.1A; 50ns; SC90A,SOD323F; Ufmax: 1.2V
Mounting: SMD
Case: SC90A; SOD323F
Kind of package: reel; tape
Max. load current: 0.3A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Max. forward voltage: 1.2V
Max. off-state voltage: 250V
Load current: 0.1A
auf Bestellung 2801 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 880+ | 0.083 EUR |
| 1000+ | 0.072 EUR |
| 1340+ | 0.054 EUR |
| 1420+ | 0.051 EUR |
| RB501SM-30FHT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape
Kind of package: reel; tape
Mounting: SMD
Max. forward impulse current: 1A
Max. forward voltage: 0.35V
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 10µA
Case: SC79; SOD523
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SC79,SOD523; reel,tape
Kind of package: reel; tape
Mounting: SMD
Max. forward impulse current: 1A
Max. forward voltage: 0.35V
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 10µA
Case: SC79; SOD523
Type of diode: Schottky rectifying
auf Bestellung 3900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1550+ | 0.047 EUR |
| 1975+ | 0.037 EUR |
| 2225+ | 0.032 EUR |
| 2550+ | 0.028 EUR |
| 2675+ | 0.027 EUR |
| RB501VM-40TE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 1A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 30µA
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.1A; SOD323F; reel,tape
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 1A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 0.1A
Semiconductor structure: single diode
Leakage current: 30µA
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
| SML-211UTT86 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0805; red; 0.9÷2.5mcd; 2x1.25x0.8mm; 1.8V; 2mA; Front: flat
Type of diode: LED
Mounting: SMD
Case: 0805
LED colour: red
Luminosity: 0.9...2.5mcd
Dimensions: 2x1.25x0.8mm
LED current: 2mA
Wavelength: 615...625nm
LED lens: transparent
Front: flat
Operating voltage: 1.8V
Category: SMD colour LEDs
Description: LED; SMD; 0805; red; 0.9÷2.5mcd; 2x1.25x0.8mm; 1.8V; 2mA; Front: flat
Type of diode: LED
Mounting: SMD
Case: 0805
LED colour: red
Luminosity: 0.9...2.5mcd
Dimensions: 2x1.25x0.8mm
LED current: 2mA
Wavelength: 615...625nm
LED lens: transparent
Front: flat
Operating voltage: 1.8V
Produkt ist nicht verfügbar
| RB496KATR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOT353T; reel,tape
Mounting: SMD
Case: SOT353T
Kind of package: reel; tape
Semiconductor structure: double independent
Leakage current: 0.8mA
Type of diode: Schottky rectifying
Max. forward impulse current: 5A
Max. forward voltage: 0.43V
Max. off-state voltage: 20V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SOT353T; reel,tape
Mounting: SMD
Case: SOT353T
Kind of package: reel; tape
Semiconductor structure: double independent
Leakage current: 0.8mA
Type of diode: Schottky rectifying
Max. forward impulse current: 5A
Max. forward voltage: 0.43V
Max. off-state voltage: 20V
Load current: 1A
Produkt ist nicht verfügbar
| RS1P600BETB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 70A
Power dissipation: 35W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 70A; 35W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 70A
Power dissipation: 35W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 9.7mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| KDZVTFTR5.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Produkt ist nicht verfügbar
| RB161QS-40T18R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD882; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD882
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SOD882; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Max. load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD882
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 7A
Produkt ist nicht verfügbar
| QST9TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
Produkt ist nicht verfügbar
| QST8TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Produkt ist nicht verfügbar
| QS6U24TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1A
Pulsed drain current: -2A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1A
Pulsed drain current: -2A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| QS6U22TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| QS5U13TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| QS5U33TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar