Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (97608) > Seite 1616 nach 1627
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| SCT3060AW7TL | ROHM SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W Mounting: SMD Drain-source voltage: 650V Drain current: 38A On-state resistance: 78mΩ Type of transistor: N-MOSFET Power dissipation: 159W Polarisation: unipolar Kind of package: reel; tape Gate charge: 58nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 95A Case: TO263-7 |
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SCT2450KEC | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247 Kind of package: tube Drain-source voltage: 1.2kV Drain current: 7A On-state resistance: 0.45Ω Type of transistor: N-MOSFET Power dissipation: 85W Polarisation: unipolar Gate charge: 27nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 25A Mounting: THT Case: TO247 |
Produkt ist nicht verfügbar |
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| SCT2750NYTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5.9A; Idm: 14A; 57W Kind of package: reel; tape Drain-source voltage: 1.7kV Drain current: 5.9A On-state resistance: 975mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Gate charge: 17nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 14A Mounting: SMD Case: TO268 |
Produkt ist nicht verfügbar |
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| SCT2H12NYTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 44W; TO268 Kind of package: reel; tape Drain-source voltage: 1.7kV Drain current: 4A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 44W Polarisation: unipolar Gate charge: 14nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -6...22V Pulsed drain current: 10A Mounting: SMD Case: TO268 |
Produkt ist nicht verfügbar |
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| SCT2H12NZGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.7A Pulsed drain current: 9.2A Power dissipation: 35W Case: TO3PFM Gate-source voltage: -6...22V On-state resistance: 1.5Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RGS80TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 120A Turn-on time: 62ns Turn-off time: 291ns Type of transistor: IGBT Power dissipation: 136W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 48nC |
Produkt ist nicht verfügbar |
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| RGS80TSX2DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 104nC Mounting: THT |
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| RGS80TSX2HRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Mounting: THT Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Gate charge: 104nC Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A |
Produkt ist nicht verfügbar |
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| RB481KTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC82,SOT343; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double independent Max. forward voltage: 0.5V Case: SC82; SOT343 Kind of package: reel; tape Leakage current: 30µA Max. forward impulse current: 1A |
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BCX17HZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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BCX17T116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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KDZVTR4.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 4.3V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 4.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA |
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| EMG2T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 47kΩ Mounting: SMD Case: SOT553 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 68 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.15W |
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FMG2AT148 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; R1: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT25 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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| UMG2NTR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Mounting: SMD Case: SC88A; SOT353 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 68 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.15W |
Produkt ist nicht verfügbar |
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| UMG5NTR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Mounting: SMD Case: SC88A; SOT353 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 68 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.15W |
Produkt ist nicht verfügbar |
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SML-D12D8WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0603; orange; 40÷100mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW Type of diode: LED Mounting: SMD Case: 0603 LED colour: orange Luminosity: 40...100mcd Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 602...608nm LED lens: transparent Power: 54mW Front: flat Manufacturer series: EXCELED™ Operating voltage: 2.2V |
auf Bestellung 2998 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SB1709TL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 1.5A; 500mW; SC96 Mounting: SMD Case: SC96 Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Frequency: 400MHz Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 1.5A Type of transistor: PNP |
Produkt ist nicht verfügbar |
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| R6004END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 8A Power dissipation: 59W Case: TO252 Gate-source voltage: ±20V On-state resistance: 1.36Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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| R6004JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 12A Power dissipation: 60W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.43Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RSR015P06FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Drain current: -1.5A On-state resistance: 0.36Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Drain-source voltage: -60V |
Produkt ist nicht verfügbar |
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| RSR015P06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Drain current: -1.5A On-state resistance: 0.36Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Drain-source voltage: -60V |
Produkt ist nicht verfügbar |
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| CDZVT2R9.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 9.1V; SMD; reel,tape; SOD923; single diode Type of diode: Zener Power dissipation: 0.1W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD923 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
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| YFZVFHTR9.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 9.1V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD323HE Mounting: SMD Semiconductor structure: single diode Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
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| UDZVTE-179.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 9.1V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
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| UDZVFHTE-179.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 9.1V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.5µA |
Produkt ist nicht verfügbar |
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| R6006KND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 70W Drain-source voltage: 600V Drain current: 6A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A |
Produkt ist nicht verfügbar |
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| SCT3160KW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; Idm: 42A; 100W Type of transistor: N-MOSFET Technology: SiC Mounting: SMD Case: TO263-7 Kind of package: reel; tape On-state resistance: 208mΩ Power dissipation: 100W Drain-source voltage: 1.2kV Drain current: 17A Polarisation: unipolar Gate charge: 42nC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 42A |
Produkt ist nicht verfügbar |
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| DAN217UMFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323F Max. forward voltage: 1.2V Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
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| DAN217UMTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT323F Max. forward voltage: 1.2V Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
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DAN217UT106 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC70,SOT323; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Max. load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SC70; SOT323 Max. forward voltage: 1.2V Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
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SH8KA2GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8A; Idm: 16A; 2.8W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 16A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| 2SB1707TL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 4A; 500mW; SC96 Mounting: SMD Case: SC96 Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Frequency: 250MHz Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 4A Type of transistor: PNP |
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| RGT16NL65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO263 Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: TO263 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| RGT16NS65DGTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; LPDS Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: LPDS Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| RQ3G150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8 Power dissipation: 20W Case: HSMT8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Gate charge: 24.1nC Polarisation: unipolar Drain current: 39A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.9mΩ |
Produkt ist nicht verfügbar |
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| 2SA2030T2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SOT723 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 260MHz |
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2SD2114KT146W | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Pulsed collector current: 1A Current gain: 2700 Mounting: SMD Kind of package: reel; tape Frequency: 350MHz |
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2SD2142KT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 10k Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
Produkt ist nicht verfügbar |
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2SD2153T100V | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 2A; 500mW; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 2A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 820...1800 Mounting: SMD Kind of package: reel; tape Frequency: 110MHz |
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| RBR15BM30AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 7.5Ax2; DPAK,SC63,TO252 Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 7.5A x2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Max. forward impulse current: 100A Max. forward voltage: 0.51V Leakage current: 0.2mA |
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| RBQ30NS45BTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 30A; D2PAK,SC83,TO263S Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 30A Semiconductor structure: single diode Case: D2PAK; SC83; TO263S Kind of package: reel; tape Max. forward impulse current: 100A Max. forward voltage: 0.59V Leakage current: 0.35mA |
Produkt ist nicht verfügbar |
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| RBQ30TB45BNZC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30A; ITO220AC,TO220FN; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A Semiconductor structure: single diode Case: ITO220AC; TO220FN Kind of package: tube Max. forward impulse current: 100A Max. forward voltage: 0.59V Leakage current: 0.35mA |
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IMD2AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Frequency: 250MHz Mounting: SMD Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 56 Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SC74; SOT457 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 22kΩ |
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IMD9AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Frequency: 250MHz Mounting: SMD Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 68 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC74; SOT457 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
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IMH5AT108 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Mounting: SMD Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SC74; SOT457 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 22kΩ |
Produkt ist nicht verfügbar |
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IMZ1AT108 | ROHM SEMICONDUCTOR |
 Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Frequency: 180MHz Mounting: SMD Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: complementary pair Type of transistor: NPN / PNP Kind of package: reel; tape Case: SC74; SOT457 Collector current: 0.15A Collector-emitter voltage: 50V |
auf Bestellung 2937 Stücke: Lieferzeit 14-21 Tag (e) |
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IMD10AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Frequency: 200MHz; 250MHz Mounting: SMD Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 68...600 Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SC74; SOT457 Collector current: 0.5/0.1A Collector-emitter voltage: 50V Base resistor: 0.1/10kΩ |
Produkt ist nicht verfügbar |
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IMD16AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.5/0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 82...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2/100kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 1255 Stücke: Lieferzeit 14-21 Tag (e) |
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| RB706UM-40TL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOT323F; reel,tape Mounting: SMD Max. forward impulse current: 0.2A Leakage current: 1µA Case: SOT323F Kind of package: reel; tape Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: double series Type of diode: Schottky rectifying Max. forward voltage: 0.37V |
auf Bestellung 2989 Stücke: Lieferzeit 14-21 Tag (e) |
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2SCR586D3TL1 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252 Mounting: SMD Power dissipation: 10W Polarisation: bipolar Kind of package: reel; tape Type of transistor: NPN Collector current: 5A Current gain: 120...390 Collector-emitter voltage: 80V Frequency: 200MHz Case: DPAK; TO252 |
auf Bestellung 909 Stücke: Lieferzeit 14-21 Tag (e) |
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| SML-P11UTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm Mounting: SMD Case: 0402 Operating voltage: 1.8V Dimensions: 1x0.6x0.2mm Wavelength: 616...626nm LED lens: transparent Luminosity: 1...2.5mcd LED current: 1mA Front: flat Power: 50mW LED colour: red Type of diode: LED |
Produkt ist nicht verfügbar |
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SML-P11UTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm Mounting: SMD Case: 0402 Operating voltage: 1.8V Dimensions: 1x0.6x0.2mm Wavelength: 616...626nm LED lens: transparent Luminosity: 1...2.5mcd LED current: 1mA Front: flat Power: 50mW LED colour: red Type of diode: LED |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
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RB717FT106 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC70,SOT323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: common anode; double Max. forward voltage: 0.37V Case: SC70; SOT323 Kind of package: reel; tape Leakage current: 1µA Max. forward impulse current: 0.2A |
Produkt ist nicht verfügbar |
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2SD2226KT146W | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.2W Polarisation: bipolar Case: SC59; SOT346 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 1200...2700 Collector current: 0.15A Type of transistor: NPN |
Produkt ist nicht verfügbar |
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QS5K2TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25 Mounting: SMD Case: TSOT25 Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: 2A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: reel; tape Semiconductor structure: common source On-state resistance: 154mΩ Pulsed drain current: 8A Power dissipation: 1.25W Gate charge: 2.8nC |
Produkt ist nicht verfügbar |
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RN141CMT2R | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF Mounting: SMD Capacitance: 0.8pF Leakage current: 0.1µA Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Case: SOD923 Max. off-state voltage: 50V Max. forward voltage: 1V Load current: 0.1A Semiconductor structure: single diode |
auf Bestellung 7870 Stücke: Lieferzeit 14-21 Tag (e) |
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| UMN1NTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW Type of diode: switching Power dissipation: 0.15W Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT353 Max. load current: 80mA Semiconductor structure: common cathode; quadruple Max. off-state voltage: 80V Load current: 25mA Reverse recovery time: 4ns Max. forward impulse current: 0.25A |
Produkt ist nicht verfügbar |
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| UMP1NFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW Type of diode: switching Power dissipation: 0.15W Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT353 Max. load current: 80mA Semiconductor structure: common anode; quadruple Max. off-state voltage: 80V Load current: 25mA Reverse recovery time: 4ns Max. forward impulse current: 0.25A |
Produkt ist nicht verfügbar |
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UMP1NTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW Type of diode: switching Power dissipation: 0.15W Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT353 Max. load current: 80mA Semiconductor structure: common anode; quadruple Max. off-state voltage: 80V Load current: 25mA Reverse recovery time: 4ns Max. forward impulse current: 0.25A |
auf Bestellung 11790 Stücke: Lieferzeit 14-21 Tag (e) |
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| SCT3060AW7TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W
Mounting: SMD
Drain-source voltage: 650V
Drain current: 38A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 159W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 95A
Case: TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 38A; Idm: 95A; 159W
Mounting: SMD
Drain-source voltage: 650V
Drain current: 38A
On-state resistance: 78mΩ
Type of transistor: N-MOSFET
Power dissipation: 159W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 58nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 95A
Case: TO263-7
Produkt ist nicht verfügbar
| SCT2450KEC |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 7A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 85W
Polarisation: unipolar
Gate charge: 27nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 25A
Mounting: THT
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W; TO247
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 7A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 85W
Polarisation: unipolar
Gate charge: 27nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 25A
Mounting: THT
Case: TO247
Produkt ist nicht verfügbar
| SCT2750NYTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5.9A; Idm: 14A; 57W
Kind of package: reel; tape
Drain-source voltage: 1.7kV
Drain current: 5.9A
On-state resistance: 975mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 17nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 14A
Mounting: SMD
Case: TO268
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5.9A; Idm: 14A; 57W
Kind of package: reel; tape
Drain-source voltage: 1.7kV
Drain current: 5.9A
On-state resistance: 975mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 17nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 14A
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
| SCT2H12NYTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 44W; TO268
Kind of package: reel; tape
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 44W
Polarisation: unipolar
Gate charge: 14nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 10A
Mounting: SMD
Case: TO268
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 10A; 44W; TO268
Kind of package: reel; tape
Drain-source voltage: 1.7kV
Drain current: 4A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 44W
Polarisation: unipolar
Gate charge: 14nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -6...22V
Pulsed drain current: 10A
Mounting: SMD
Case: TO268
Produkt ist nicht verfügbar
| SCT2H12NZGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.7A
Pulsed drain current: 9.2A
Power dissipation: 35W
Case: TO3PFM
Gate-source voltage: -6...22V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.7A
Pulsed drain current: 9.2A
Power dissipation: 35W
Case: TO3PFM
Gate-source voltage: -6...22V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RGS80TS65DHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 120A
Turn-on time: 62ns
Turn-off time: 291ns
Type of transistor: IGBT
Power dissipation: 136W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 120A
Turn-on time: 62ns
Turn-off time: 291ns
Type of transistor: IGBT
Power dissipation: 136W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Produkt ist nicht verfügbar
| RGS80TSX2DHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 104nC
Mounting: THT
Produkt ist nicht verfügbar
| RGS80TSX2HRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Mounting: THT
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Gate charge: 104nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Mounting: THT
Turn-on time: 89ns
Turn-off time: 629ns
Type of transistor: IGBT
Power dissipation: 277W
Kind of package: tube
Gate charge: 104nC
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
| RB481KTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC82,SOT343; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Max. forward voltage: 0.5V
Case: SC82; SOT343
Kind of package: reel; tape
Leakage current: 30µA
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC82,SOT343; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double independent
Max. forward voltage: 0.5V
Case: SC82; SOT343
Kind of package: reel; tape
Leakage current: 30µA
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
| BCX17HZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
| BCX17T116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
| KDZVTR4.3B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.3V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.3V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Produkt ist nicht verfügbar
| EMG2T2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 47kΩ
Mounting: SMD
Case: SOT553
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.15W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 47kΩ
Mounting: SMD
Case: SOT553
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.15W
Produkt ist nicht verfügbar
| FMG2AT148 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| UMG2NTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Mounting: SMD
Case: SC88A; SOT353
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.15W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Mounting: SMD
Case: SC88A; SOT353
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.15W
Produkt ist nicht verfügbar
| UMG5NTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Mounting: SMD
Case: SC88A; SOT353
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.15W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Mounting: SMD
Case: SC88A; SOT353
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 68
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.15W
Produkt ist nicht verfügbar
| SML-D12D8WT86 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0603; orange; 40÷100mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: orange
Luminosity: 40...100mcd
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 602...608nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
Operating voltage: 2.2V
Category: SMD colour LEDs
Description: LED; SMD; 0603; orange; 40÷100mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: orange
Luminosity: 40...100mcd
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 602...608nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
Operating voltage: 2.2V
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 420+ | 0.17 EUR |
| 625+ | 0.11 EUR |
| 1115+ | 0.064 EUR |
| 1180+ | 0.061 EUR |
| 2SB1709TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1.5A; 500mW; SC96
Mounting: SMD
Case: SC96
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 400MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 1.5A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1.5A; 500mW; SC96
Mounting: SMD
Case: SC96
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 400MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 1.5A
Type of transistor: PNP
Produkt ist nicht verfügbar
| R6004END3TL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1.36Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1.36Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| R6004JND3TL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RSR015P06FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
Produkt ist nicht verfügbar
| RSR015P06HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3
Mounting: SMD
Case: TSMT3
Kind of package: reel; tape
Drain current: -1.5A
On-state resistance: 0.36Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Drain-source voltage: -60V
Produkt ist nicht verfügbar
| CDZVT2R9.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 9.1V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 9.1V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| YFZVFHTR9.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 9.1V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 9.1V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| UDZVTE-179.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| UDZVFHTE-179.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 9.1V; SMD; reel,tape; SC90A,SOD323F; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.5µA
Produkt ist nicht verfügbar
| R6006KND3TL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 70W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 70W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Produkt ist nicht verfügbar
| SCT3160KW7TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; Idm: 42A; 100W
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
On-state resistance: 208mΩ
Power dissipation: 100W
Drain-source voltage: 1.2kV
Drain current: 17A
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 42A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; Idm: 42A; 100W
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
On-state resistance: 208mΩ
Power dissipation: 100W
Drain-source voltage: 1.2kV
Drain current: 17A
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 42A
Produkt ist nicht verfügbar
| DAN217UMFHTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323F
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323F
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| DAN217UMTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323F
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT323F
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| DAN217UT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC70,SOT323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SC70; SOT323
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC70,SOT323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SC70; SOT323
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SH8KA2GZETB |
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8A; Idm: 16A; 2.8W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8A; Idm: 16A; 2.8W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| 2SB1707TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 4A; 500mW; SC96
Mounting: SMD
Case: SC96
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 250MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 4A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 4A; 500mW; SC96
Mounting: SMD
Case: SC96
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 250MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 4A
Type of transistor: PNP
Produkt ist nicht verfügbar
| RGT16NL65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO263
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: TO263
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| RGT16NS65DGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: LPDS
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Mounting: SMD
Pulsed collector current: 24A
Type of transistor: IGBT
Turn-on time: 27ns
Kind of package: reel; tape
Case: LPDS
Turn-off time: 170ns
Gate-emitter voltage: ±30V
Collector current: 8A
Collector-emitter voltage: 650V
Power dissipation: 47W
Gate charge: 21nC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| RQ3G150GNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Power dissipation: 20W
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Gate charge: 24.1nC
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 39A; Idm: 60A; 20W; HSMT8
Power dissipation: 20W
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Gate charge: 24.1nC
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Produkt ist nicht verfügbar
| 2SA2030T2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT723
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 260MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 0.5A; 150mW; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SOT723
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 260MHz
Produkt ist nicht verfügbar
| 2SD2114KT146W |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Pulsed collector current: 1A
Current gain: 2700
Mounting: SMD
Kind of package: reel; tape
Frequency: 350MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Pulsed collector current: 1A
Current gain: 2700
Mounting: SMD
Kind of package: reel; tape
Frequency: 350MHz
Produkt ist nicht verfügbar
| 2SD2142KT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 10k
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 10k
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
| 2SD2153T100V |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 820...1800
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 2A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 2A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 820...1800
Mounting: SMD
Kind of package: reel; tape
Frequency: 110MHz
Produkt ist nicht verfügbar
| RBR15BM30AFHTL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 7.5Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. forward voltage: 0.51V
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 7.5Ax2; DPAK,SC63,TO252
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. forward voltage: 0.51V
Leakage current: 0.2mA
Produkt ist nicht verfügbar
| RBQ30NS45BTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 30A; D2PAK,SC83,TO263S
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; SC83; TO263S
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. forward voltage: 0.59V
Leakage current: 0.35mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 30A; D2PAK,SC83,TO263S
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; SC83; TO263S
Kind of package: reel; tape
Max. forward impulse current: 100A
Max. forward voltage: 0.59V
Leakage current: 0.35mA
Produkt ist nicht verfügbar
| RBQ30TB45BNZC9 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30A; ITO220AC,TO220FN; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Case: ITO220AC; TO220FN
Kind of package: tube
Max. forward impulse current: 100A
Max. forward voltage: 0.59V
Leakage current: 0.35mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30A; ITO220AC,TO220FN; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A
Semiconductor structure: single diode
Case: ITO220AC; TO220FN
Kind of package: tube
Max. forward impulse current: 100A
Max. forward voltage: 0.59V
Leakage current: 0.35mA
Produkt ist nicht verfügbar
| IMD2AT108 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Frequency: 250MHz
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 56
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC74; SOT457
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Frequency: 250MHz
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 56
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC74; SOT457
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Produkt ist nicht verfügbar
| IMD9AT108 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Frequency: 250MHz
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 68
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC74; SOT457
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Frequency: 250MHz
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 68
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC74; SOT457
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Produkt ist nicht verfügbar
| IMH5AT108 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC74; SOT457
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC74; SOT457
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Produkt ist nicht verfügbar
| IMZ1AT108 | |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Frequency: 180MHz
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Kind of package: reel; tape
Case: SC74; SOT457
Collector current: 0.15A
Collector-emitter voltage: 50V
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Frequency: 180MHz
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Kind of package: reel; tape
Case: SC74; SOT457
Collector current: 0.15A
Collector-emitter voltage: 50V
auf Bestellung 2937 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 1.04 EUR |
| 80+ | 0.9 EUR |
| 101+ | 0.71 EUR |
| 107+ | 0.67 EUR |
| 500+ | 0.66 EUR |
| IMD10AT108 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Frequency: 200MHz; 250MHz
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 68...600
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC74; SOT457
Collector current: 0.5/0.1A
Collector-emitter voltage: 50V
Base resistor: 0.1/10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Frequency: 200MHz; 250MHz
Mounting: SMD
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 68...600
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC74; SOT457
Collector current: 0.5/0.1A
Collector-emitter voltage: 50V
Base resistor: 0.1/10kΩ
Produkt ist nicht verfügbar
| IMD16AT108 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.5/0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 82...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2/100kΩ
Base-emitter resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.5/0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 82...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2/100kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 1255 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 455+ | 0.16 EUR |
| 520+ | 0.14 EUR |
| 565+ | 0.13 EUR |
| 600+ | 0.12 EUR |
| RB706UM-40TL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOT323F; reel,tape
Mounting: SMD
Max. forward impulse current: 0.2A
Leakage current: 1µA
Case: SOT323F
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: double series
Type of diode: Schottky rectifying
Max. forward voltage: 0.37V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SOT323F; reel,tape
Mounting: SMD
Max. forward impulse current: 0.2A
Leakage current: 1µA
Case: SOT323F
Kind of package: reel; tape
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: double series
Type of diode: Schottky rectifying
Max. forward voltage: 0.37V
auf Bestellung 2989 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 640+ | 0.11 EUR |
| 740+ | 0.097 EUR |
| 990+ | 0.073 EUR |
| 1040+ | 0.069 EUR |
| 2SCR586D3TL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252
Mounting: SMD
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 5A
Current gain: 120...390
Collector-emitter voltage: 80V
Frequency: 200MHz
Case: DPAK; TO252
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252
Mounting: SMD
Power dissipation: 10W
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 5A
Current gain: 120...390
Collector-emitter voltage: 80V
Frequency: 200MHz
Case: DPAK; TO252
auf Bestellung 909 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 72+ | 1 EUR |
| 112+ | 0.64 EUR |
| 124+ | 0.58 EUR |
| 145+ | 0.49 EUR |
| 153+ | 0.47 EUR |
| 500+ | 0.46 EUR |
| SML-P11UTT86 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm
Mounting: SMD
Case: 0402
Operating voltage: 1.8V
Dimensions: 1x0.6x0.2mm
Wavelength: 616...626nm
LED lens: transparent
Luminosity: 1...2.5mcd
LED current: 1mA
Front: flat
Power: 50mW
LED colour: red
Type of diode: LED
Category: SMD colour LEDs
Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm
Mounting: SMD
Case: 0402
Operating voltage: 1.8V
Dimensions: 1x0.6x0.2mm
Wavelength: 616...626nm
LED lens: transparent
Luminosity: 1...2.5mcd
LED current: 1mA
Front: flat
Power: 50mW
LED colour: red
Type of diode: LED
Produkt ist nicht verfügbar
| SML-P11UTT86R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm
Mounting: SMD
Case: 0402
Operating voltage: 1.8V
Dimensions: 1x0.6x0.2mm
Wavelength: 616...626nm
LED lens: transparent
Luminosity: 1...2.5mcd
LED current: 1mA
Front: flat
Power: 50mW
LED colour: red
Type of diode: LED
Category: SMD colour LEDs
Description: LED; SMD; 0402; red; 1÷2.5mcd; 1x0.6x0.2mm; 1.8V; 1mA; λd: 616÷626nm
Mounting: SMD
Case: 0402
Operating voltage: 1.8V
Dimensions: 1x0.6x0.2mm
Wavelength: 616...626nm
LED lens: transparent
Luminosity: 1...2.5mcd
LED current: 1mA
Front: flat
Power: 50mW
LED colour: red
Type of diode: LED
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 185+ | 0.39 EUR |
| RB717FT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC70,SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: common anode; double
Max. forward voltage: 0.37V
Case: SC70; SOT323
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 30mA; SC70,SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: common anode; double
Max. forward voltage: 0.37V
Case: SC70; SOT323
Kind of package: reel; tape
Leakage current: 1µA
Max. forward impulse current: 0.2A
Produkt ist nicht verfügbar
| 2SD2226KT146W |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Case: SC59; SOT346
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 1200...2700
Collector current: 0.15A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: bipolar
Case: SC59; SOT346
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 1200...2700
Collector current: 0.15A
Type of transistor: NPN
Produkt ist nicht verfügbar
| QS5K2TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25
Mounting: SMD
Case: TSOT25
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common source
On-state resistance: 154mΩ
Pulsed drain current: 8A
Power dissipation: 1.25W
Gate charge: 2.8nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25
Mounting: SMD
Case: TSOT25
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common source
On-state resistance: 154mΩ
Pulsed drain current: 8A
Power dissipation: 1.25W
Gate charge: 2.8nC
Produkt ist nicht verfügbar
| RN141CMT2R |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF
Mounting: SMD
Capacitance: 0.8pF
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Case: SOD923
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
Category: Diodes - others
Description: Diode: switching; 50V; 0.1A; SOD923; single diode; Ufmax: 1V; 0.8pF
Mounting: SMD
Capacitance: 0.8pF
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Case: SOD923
Max. off-state voltage: 50V
Max. forward voltage: 1V
Load current: 0.1A
Semiconductor structure: single diode
auf Bestellung 7870 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 650+ | 0.11 EUR |
| 700+ | 0.1 EUR |
| 860+ | 0.083 EUR |
| 910+ | 0.079 EUR |
| UMN1NTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common cathode; quadruple
Max. off-state voltage: 80V
Load current: 25mA
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common cathode; quadruple
Max. off-state voltage: 80V
Load current: 25mA
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Produkt ist nicht verfügbar
| UMP1NFHTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common anode; quadruple
Max. off-state voltage: 80V
Load current: 25mA
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common anode; quadruple
Max. off-state voltage: 80V
Load current: 25mA
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Produkt ist nicht verfügbar
| UMP1NTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common anode; quadruple
Max. off-state voltage: 80V
Load current: 25mA
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 25mA; 4ns; SOT353; Ufmax: 0.9V; 150mW
Type of diode: switching
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT353
Max. load current: 80mA
Semiconductor structure: common anode; quadruple
Max. off-state voltage: 80V
Load current: 25mA
Reverse recovery time: 4ns
Max. forward impulse current: 0.25A
auf Bestellung 11790 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 590+ | 0.12 EUR |
| 630+ | 0.11 EUR |
| 830+ | 0.087 EUR |
| 880+ | 0.082 EUR |