Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (97670) > Seite 1621 nach 1628
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SSTA06HZGT116 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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SSTA56HZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
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DTB113ECHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
auf Bestellung 1785 Stücke: Lieferzeit 14-21 Tag (e) |
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DTB113ZCHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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DTB123YCHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
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DTD113ECHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
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DTD123YCHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
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DTA113ZCAHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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RF101L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 20A Kind of package: reel; tape Type of diode: rectifying Case: SMA Max. off-state voltage: 200V Max. forward voltage: 0.87V Load current: 1A Semiconductor structure: single diode |
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RF101L4STFTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 25A Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 25A Kind of package: reel; tape Type of diode: rectifying Case: SMA Max. off-state voltage: 0.4kV Max. forward voltage: 1.25V Load current: 1A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| RF101LAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD128; Ufmax: 0.87V Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 20A Kind of package: reel; tape Type of diode: rectifying Case: SOD128 Max. off-state voltage: 200V Max. forward voltage: 0.87V Load current: 1A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| RF101LAM4STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 25A Kind of package: reel; tape Type of diode: rectifying Case: SOD128 Max. off-state voltage: 0.4kV Max. forward voltage: 1.25V Load current: 1A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| RF101LAM4STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V Mounting: SMD Reverse recovery time: 25ns Max. forward impulse current: 25A Kind of package: reel; tape Type of diode: rectifying Case: SOD128 Max. off-state voltage: 0.4kV Max. forward voltage: 1.25V Load current: 1A Semiconductor structure: single diode |
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| HP8MA2TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 18/15A Pulsed drain current: 48A Power dissipation: 7W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 16.4/29mΩ Mounting: SMD Gate charge: 22/25nC Kind of package: reel; tape Kind of channel: enhanced |
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| RGS00TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Mounting: THT Turn-on time: 70ns Turn-off time: 292ns Type of transistor: IGBT Power dissipation: 163W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 58nC Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A |
Produkt ist nicht verfügbar |
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| RGS00TS65EHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Mounting: THT Turn-on time: 70ns Turn-off time: 299ns Type of transistor: IGBT Power dissipation: 163W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 58nC Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A |
Produkt ist nicht verfügbar |
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SSTA06T116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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| RQ5L030SNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RQ5L035GNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| R6524KNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 245W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 72A Power dissipation: 245W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| R6576ENZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 76A; Idm: 228A; 735W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 76A Pulsed drain current: 228A Power dissipation: 735W Case: TO247 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| UDZVTE-174.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
Produkt ist nicht verfügbar |
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| UDZVFHTE-174.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
Produkt ist nicht verfügbar |
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| RS1E220ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -76A Pulsed drain current: -88A Power dissipation: 34W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RS1E280BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 112A Power dissipation: 30W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RS1E280GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 112A Power dissipation: 31W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RS1E301GNTB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 120A Power dissipation: 33W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 39.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RS1E350BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 140A Power dissipation: 35W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 185nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RS1L120GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 48A Power dissipation: 27W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 19.8mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RS1L145GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 58A Power dissipation: 31W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 14.1mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RS1L180GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Pulsed drain current: 72A Power dissipation: 39W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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UMZ27NT106 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 27V; SMD; reel,tape; SC70,SOT323; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 27V Mounting: SMD Kind of package: reel; tape Case: SC70; SOT323 Semiconductor structure: common anode; double Leakage current: 0.1µA |
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| UDZVTE-1718B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 18V; SMD; reel,tape; SC90A,SOD323F; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
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| UDZVFHTE-1718B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 18V; SMD; reel,tape; SC90A,SOD323F; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
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| RCX200N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Pulsed drain current: 80A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RFUH10NS4SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 430V Load current: 10A Reverse recovery time: 25ns Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.7V Max. forward impulse current: 80A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| RFUH10NS4STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 430V Load current: 10A Reverse recovery time: 25ns Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.7V Max. forward impulse current: 80A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| BD33IA5MEFJ-ME2 | ROHM SEMICONDUCTOR |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; HTSOP-J8; SMD Type of integrated circuit: voltage regulator Output current: 0.5A Output voltage: 3.3V Number of channels: 1 Case: HTSOP-J8 Mounting: SMD Operating temperature: -40...105°C Input voltage: 2.5...5.5V Kind of package: reel; tape Voltage drop: 0.4V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
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RFC02MM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.95V Max. forward impulse current: 10A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| SCS230AE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 230W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A x2 Max. load current: 130A Power dissipation: 230W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 0.4kA Max. forward voltage: 1.63V Leakage current: 0.3mA |
Produkt ist nicht verfügbar |
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BA4560 | ROHM SEMICONDUCTOR |
Category: THT operational amplifiers Description: IC: operational amplifier; 2MHz; Ch: 2; DIP8; ±4÷15VDC,8÷30VDC Type of integrated circuit: operational amplifier Bandwidth: 2MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 1V/μs Voltage supply range: ± 4...15V DC; 8...30V DC |
Produkt ist nicht verfügbar |
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RB551VM-30TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; SOD323F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Semiconductor structure: single diode Max. forward voltage: 0.47V Case: SOD323F Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 2A |
auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
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RB551VM-40FHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SOD323F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.43V Case: SOD323F Kind of package: reel; tape Leakage current: 0.3mA Max. forward impulse current: 1A |
Produkt ist nicht verfügbar |
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| UDZVTE-1710B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
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| UDZVFHTE-1710B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
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| RFN2LAM4STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; 30ns; SOD128; Ufmax: 1.2V Mounting: SMD Max. forward impulse current: 50A Case: SOD128 Kind of package: reel; tape Load current: 1.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 30ns Max. forward voltage: 1.2V Max. off-state voltage: 0.4kV |
Produkt ist nicht verfügbar |
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| RFN2LAM4STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; 30ns; SOD128; Ufmax: 1.2V Mounting: SMD Max. forward impulse current: 50A Case: SOD128 Kind of package: reel; tape Load current: 1.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 30ns Max. forward voltage: 1.2V Max. off-state voltage: 0.4kV |
Produkt ist nicht verfügbar |
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| RFN2LAM6STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SOD128; Ufmax: 1.55V Mounting: SMD Max. forward impulse current: 40A Case: SOD128 Kind of package: reel; tape Load current: 1.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 35ns Max. forward voltage: 1.55V Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
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| RFN2LAM6STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SOD128; Ufmax: 1.55V Mounting: SMD Max. forward impulse current: 40A Case: SOD128 Kind of package: reel; tape Load current: 1.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 35ns Max. forward voltage: 1.55V Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
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| RBR1LAM30ATR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD128; reel,tape Mounting: SMD Max. forward impulse current: 40A Case: SOD128 Kind of package: reel; tape Load current: 1A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward voltage: 0.48V Max. off-state voltage: 30V |
Produkt ist nicht verfügbar |
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| RQ5E035ATTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| RQ6E035ATTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.25W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -30V Drain current: -3.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| RB238NS100FHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK,SC83,TO263S Mounting: SMD Max. forward voltage: 0.86V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 20µA Kind of package: reel; tape Type of diode: Schottky rectifying Case: D2PAK; SC83; TO263S Max. off-state voltage: 100V |
Produkt ist nicht verfügbar |
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| RB238NS150FHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 150V; 20Ax2; D2PAK,SC83,TO263S Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.87V Case: D2PAK; SC83; TO263S Kind of package: reel; tape Leakage current: 30µA Max. forward impulse current: 100A |
Produkt ist nicht verfügbar |
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| RF201LAM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SOD128; Ufmax: 0.87V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| RF201LAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SOD128; Ufmax: 0.87V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| RF302LAM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SOD128; Ufmax: 0.92V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.92V Max. forward impulse current: 20A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| RF302LAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SOD128; Ufmax: 0.92V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.92V Max. forward impulse current: 20A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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 |
SCS215AEC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 110W; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Max. load current: 65A Power dissipation: 110W Semiconductor structure: single diode Case: TO247-3 Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 1.55V |
Produkt ist nicht verfügbar |
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SCS215AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 110W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Max. load current: 65A Power dissipation: 110W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 1.55V |
Produkt ist nicht verfügbar |
| SSTA06HZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
| SSTA56HZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
| DTB113ECHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
auf Bestellung 1785 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1250+ | 0.057 EUR |
| 1395+ | 0.051 EUR |
| 1695+ | 0.042 EUR |
| 1785+ | 0.04 EUR |
| DTB113ZCHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| DTB123YCHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| DTD113ECHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar
| DTD123YCHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| DTA113ZCAHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| RF101L2SDDTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101L4STFTE25 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 25A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SMA; Ufmax: 1.25V; Ifsm: 25A
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101LAM2STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD128; Ufmax: 0.87V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD128; Ufmax: 0.87V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 20A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 200V
Max. forward voltage: 0.87V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101LAM4STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| RF101LAM4STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 25ns; SOD128; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 25ns
Max. forward impulse current: 25A
Kind of package: reel; tape
Type of diode: rectifying
Case: SOD128
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.25V
Load current: 1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| HP8MA2TB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 18/15A
Pulsed drain current: 48A
Power dissipation: 7W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 16.4/29mΩ
Mounting: SMD
Gate charge: 22/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 18/15A
Pulsed drain current: 48A
Power dissipation: 7W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 16.4/29mΩ
Mounting: SMD
Gate charge: 22/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RGS00TS65DHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Turn-on time: 70ns
Turn-off time: 292ns
Type of transistor: IGBT
Power dissipation: 163W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Turn-on time: 70ns
Turn-off time: 292ns
Type of transistor: IGBT
Power dissipation: 163W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
| RGS00TS65EHRC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Turn-on time: 70ns
Turn-off time: 299ns
Type of transistor: IGBT
Power dissipation: 163W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Mounting: THT
Turn-on time: 70ns
Turn-off time: 299ns
Type of transistor: IGBT
Power dissipation: 163W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 58nC
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
| SSTA06T116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
| RQ5L030SNTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RQ5L035GNTCL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| R6524KNZ4C13 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 245W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 245W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 245W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| R6576ENZ4C13 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 76A; Idm: 228A; 735W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 735W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 76A; Idm: 228A; 735W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 228A
Power dissipation: 735W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| UDZVTE-174.7B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Produkt ist nicht verfügbar
| UDZVFHTE-174.7B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 4.7V; SMD; reel,tape; SC90A,SOD323F; 2uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Produkt ist nicht verfügbar
| RS1E220ATTB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -76A
Pulsed drain current: -88A
Power dissipation: 34W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -76A; Idm: -88A; 34W; HSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -76A
Pulsed drain current: -88A
Power dissipation: 34W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RS1E280BNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 30W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 30W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RS1E280GNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 31W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 31W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RS1E301GNTB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 120A
Power dissipation: 33W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 39.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 120A
Power dissipation: 33W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 39.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RS1E350BNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 140A
Power dissipation: 35W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 140A
Power dissipation: 35W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RS1L120GNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 27W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 19.8mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 48A; 27W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 48A
Power dissipation: 27W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 19.8mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RS1L145GNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 58A
Power dissipation: 31W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 14.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 47A; Idm: 58A; 31W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 58A
Power dissipation: 31W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 14.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RS1L180GNTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Pulsed drain current: 72A
Power dissipation: 39W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Pulsed drain current: 72A
Power dissipation: 39W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| UMZ27NT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 27V; SMD; reel,tape; SC70,SOT323; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 27V
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Semiconductor structure: common anode; double
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 27V; SMD; reel,tape; SC70,SOT323; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 27V
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Semiconductor structure: common anode; double
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| UDZVTE-1718B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| UDZVFHTE-1718B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| RCX200N20 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RFUH10NS4SFHTL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 430V
Load current: 10A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 430V
Load current: 10A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RFUH10NS4STL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 430V
Load current: 10A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 10A; 25ns; D2PAK; Ufmax: 1.7V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 430V
Load current: 10A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 80A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| BD33IA5MEFJ-ME2 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; HTSOP-J8; SMD
Type of integrated circuit: voltage regulator
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Case: HTSOP-J8
Mounting: SMD
Operating temperature: -40...105°C
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Voltage drop: 0.4V
Kind of voltage regulator: fixed; LDO; linear
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; HTSOP-J8; SMD
Type of integrated circuit: voltage regulator
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Case: HTSOP-J8
Mounting: SMD
Operating temperature: -40...105°C
Input voltage: 2.5...5.5V
Kind of package: reel; tape
Voltage drop: 0.4V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
| RFC02MM2STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 10A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SCS230AE2GC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 230W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 130A
Power dissipation: 230W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.63V
Leakage current: 0.3mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; 230W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 130A
Power dissipation: 230W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.63V
Leakage current: 0.3mA
Produkt ist nicht verfügbar
| BA4560 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 2; DIP8; ±4÷15VDC,8÷30VDC
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 1V/μs
Voltage supply range: ± 4...15V DC; 8...30V DC
Category: THT operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 2; DIP8; ±4÷15VDC,8÷30VDC
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 1V/μs
Voltage supply range: ± 4...15V DC; 8...30V DC
Produkt ist nicht verfügbar
| RB551VM-30TE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; SOD323F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOD323F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; SOD323F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Case: SOD323F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 2A
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1250+ | 0.057 EUR |
| 1400+ | 0.051 EUR |
| 1900+ | 0.038 EUR |
| 2000+ | 0.036 EUR |
| RB551VM-40FHTE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SOD323F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Case: SOD323F
Kind of package: reel; tape
Leakage current: 0.3mA
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SOD323F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Case: SOD323F
Kind of package: reel; tape
Leakage current: 0.3mA
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
| UDZVTE-1710B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| UDZVFHTE-1710B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.1µA
Produkt ist nicht verfügbar
| RFN2LAM4STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 30ns; SOD128; Ufmax: 1.2V
Mounting: SMD
Max. forward impulse current: 50A
Case: SOD128
Kind of package: reel; tape
Load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 30ns; SOD128; Ufmax: 1.2V
Mounting: SMD
Max. forward impulse current: 50A
Case: SOD128
Kind of package: reel; tape
Load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
| RFN2LAM4STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 30ns; SOD128; Ufmax: 1.2V
Mounting: SMD
Max. forward impulse current: 50A
Case: SOD128
Kind of package: reel; tape
Load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 30ns; SOD128; Ufmax: 1.2V
Mounting: SMD
Max. forward impulse current: 50A
Case: SOD128
Kind of package: reel; tape
Load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
| RFN2LAM6STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SOD128; Ufmax: 1.55V
Mounting: SMD
Max. forward impulse current: 40A
Case: SOD128
Kind of package: reel; tape
Load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.55V
Max. off-state voltage: 0.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SOD128; Ufmax: 1.55V
Mounting: SMD
Max. forward impulse current: 40A
Case: SOD128
Kind of package: reel; tape
Load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.55V
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
| RFN2LAM6STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SOD128; Ufmax: 1.55V
Mounting: SMD
Max. forward impulse current: 40A
Case: SOD128
Kind of package: reel; tape
Load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.55V
Max. off-state voltage: 0.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SOD128; Ufmax: 1.55V
Mounting: SMD
Max. forward impulse current: 40A
Case: SOD128
Kind of package: reel; tape
Load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.55V
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
| RBR1LAM30ATR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD128; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Case: SOD128
Kind of package: reel; tape
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.48V
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SOD128; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Case: SOD128
Kind of package: reel; tape
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.48V
Max. off-state voltage: 30V
Produkt ist nicht verfügbar
| RQ5E035ATTCL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| RQ6E035ATTCR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -12A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 10nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -30V
Drain current: -3.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| RB238NS100FHTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK,SC83,TO263S
Mounting: SMD
Max. forward voltage: 0.86V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 20µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: D2PAK; SC83; TO263S
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 20Ax2; D2PAK,SC83,TO263S
Mounting: SMD
Max. forward voltage: 0.86V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 20µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: D2PAK; SC83; TO263S
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
| RB238NS150FHTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 20Ax2; D2PAK,SC83,TO263S
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.87V
Case: D2PAK; SC83; TO263S
Kind of package: reel; tape
Leakage current: 30µA
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 150V; 20Ax2; D2PAK,SC83,TO263S
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.87V
Case: D2PAK; SC83; TO263S
Kind of package: reel; tape
Leakage current: 30µA
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
| RF201LAM2STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SOD128; Ufmax: 0.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SOD128; Ufmax: 0.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RF201LAM2STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SOD128; Ufmax: 0.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SOD128; Ufmax: 0.87V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RF302LAM2STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SOD128; Ufmax: 0.92V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.92V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SOD128; Ufmax: 0.92V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.92V
Max. forward impulse current: 20A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RF302LAM2STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SOD128; Ufmax: 0.92V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.92V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SOD128; Ufmax: 0.92V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.92V
Max. forward impulse current: 20A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SCS215AEC |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 110W; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Max. load current: 65A
Power dissipation: 110W
Semiconductor structure: single diode
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 110W; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Max. load current: 65A
Power dissipation: 110W
Semiconductor structure: single diode
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 1.55V
Produkt ist nicht verfügbar
| SCS215AGC |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 110W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Max. load current: 65A
Power dissipation: 110W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 1.55V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; 110W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Max. load current: 65A
Power dissipation: 110W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 1.55V
Produkt ist nicht verfügbar