Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (98396) > Seite 1619 nach 1640
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| RB021VAM90TR | ROHM SEMICONDUCTOR |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 90V; 0.2A; SOD323HE; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD323HE Max. off-state voltage: 90V Max. forward voltage: 0.49V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 5A Leakage current: 0.9mA |
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IMB2AT110 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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IMH1AT110 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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IMH2AT110 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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IMH4AT110 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Collector-emitter voltage: 50V Type of transistor: NPN x2 Power dissipation: 300mW Kind of transistor: BRT Base resistor: 10kΩ Frequency: 250MHz Current gain: 100...600 Case: SC74; SOT457 Polarisation: bipolar |
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IMH9AT110 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Collector-emitter voltage: 50V Type of transistor: NPN x2 Power dissipation: 300mW Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Current gain: 68 Case: SC74; SOT457 Polarisation: bipolar |
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IMT1AT110 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
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IMB10AT110 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Mounting: SMD Kind of package: reel; tape Current gain: 80 Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.3W Polarisation: bipolar Frequency: 250MHz Case: SC74; SOT457 Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Collector-emitter voltage: 50V |
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DTC114ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200/350mW; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 200/350mW Case: SOT23 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 2624 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC114ECAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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SML-D12M8WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0603; yellow green; 10÷25mcd; 1.6x0.8x0.55mm; 2.2V; 20mA Type of diode: LED Mounting: SMD Case: 0603 LED colour: yellow green Luminosity: 10...25mcd Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 569...575nm LED lens: transparent Power: 54mW Front: flat Manufacturer series: EXCELED™ Operating voltage: 2.2V |
auf Bestellung 1211 Stücke: Lieferzeit 14-21 Tag (e) |
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| R8005ANJFRGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 10A; 120W; D2PAK Power dissipation: 120W Case: D2PAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 800V Drain current: 5A On-state resistance: 3.8Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 10A |
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UMD12NFHATR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
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| RK7002BMHZGT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Pulsed drain current: 1A Power dissipation: 0.35W Case: SST3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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SCS112AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; 93W; TO220AC; tube Kind of package: tube Load current: 12A Semiconductor structure: single diode Max. forward impulse current: 167A Power dissipation: 93W Type of diode: Schottky rectifying Technology: SiC Heatsink thickness: max. 1.27mm Mounting: THT Case: TO220AC Max. off-state voltage: 0.6kV Max. load current: 48A Max. forward voltage: 1.7V |
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BAS40-06HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: switching Max. off-state voltage: 40V Max. load current: 120mA Max. forward voltage: 1V Load current: 120mA x2 Semiconductor structure: common anode; double Max. forward impulse current: 0.6A |
Produkt ist nicht verfügbar |
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| QS8J13TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.5A Pulsed drain current: -18A Power dissipation: 1.5W Case: TSMT8 On-state resistance: 58mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| QS8J2TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -4A Pulsed drain current: -12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 132mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| QS8J4TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Pulsed drain current: -16A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| QS8J5TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| QS8K11TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| QS8K13TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 18A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| QS8M31TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/2A; Idm: 4÷6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 3/2A Pulsed drain current: 4...6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 137/266mΩ Mounting: SMD Gate charge: 4/7.2nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| QS8M51FRATR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhanced |
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| QS8M51TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BA033CC0FP-E2 | ROHM SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3.3V Output current: 1A Case: TO252-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...25V |
auf Bestellung 1706 Stücke: Lieferzeit 14-21 Tag (e) |
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| BA05CC0FP-E2 | ROHM SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-3; SMD; ±2% Operating temperature: -40...125°C Mounting: SMD Case: TO252-3 Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Tolerance: ±2% Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 4...25V Output current: 1A Voltage drop: 0.3V |
Produkt ist nicht verfügbar |
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KDZVTR5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 20µA |
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| PDZVTR5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD128 Mounting: SMD Semiconductor structure: single diode Leakage current: 20µA |
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| TFZVTR5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 5.1V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323HE Mounting: SMD Semiconductor structure: single diode Leakage current: 5µA |
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| CDZVT2R5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 5.1V; SMD; reel,tape; SOD923; single diode; 2uA Type of diode: Zener Power dissipation: 0.1W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD923 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
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| EDZVT2R5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.1V Kind of package: reel; tape Case: SC79; SOD523F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
auf Bestellung 7896 Stücke: Lieferzeit 14-21 Tag (e) |
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| R6009END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Pulsed drain current: 18A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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| R6009JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Pulsed drain current: 27A Power dissipation: 125W Case: TO252 Gate-source voltage: ±30V On-state resistance: 585mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
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| R6009JNJGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Pulsed drain current: 27A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 585mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
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| R6009KNJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Pulsed drain current: 27A Power dissipation: 94W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced |
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SCS220KE2C | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 280W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Max. load current: 94A Power dissipation: 280W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 320A Max. forward voltage: 1.9V |
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SCS220KE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 270W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Max. load current: 94A Power dissipation: 270W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 320A Max. forward voltage: 1.9V Leakage current: 0.2mA |
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SCS220KGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC Mounting: THT Kind of package: tube Power dissipation: 210W Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 83A Max. forward voltage: 1.6V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 310A |
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| SCS220KGC17 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC Mounting: THT Kind of package: tube Power dissipation: 210W Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 1.2kV Max. load current: 83A Max. forward voltage: 1.9V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 310A Leakage current: 0.4mA |
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| R6012JNJGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 160W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 36A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced |
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| R6012JNXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 36A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhanced |
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DTC123ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
Produkt ist nicht verfügbar |
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| DTC123EETL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
auf Bestellung 1558 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123EKAT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
Produkt ist nicht verfügbar |
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DTC123EU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
auf Bestellung 10300 Stücke: Lieferzeit 14-21 Tag (e) |
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| RSR010N10FHATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| RSR010N10HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SH8MA4TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/-8.5A; Idm: 18A; 3W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 9/-8.5A Pulsed drain current: 18A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 32.5/41.3mΩ Mounting: SMD Gate charge: 15.5/19.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DTC144ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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DTC144ECAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC144EEBTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC89 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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DTC144EEFRATL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 2560 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC144EETL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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DTC144EKAT146 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 580 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC144EMFHAT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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| DTC144EMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Case: SOT723 Collector-emitter voltage: 50V Mounting: SMD Collector current: 0.1A Polarisation: bipolar Power dissipation: 0.15W Type of transistor: NPN Current gain: 68 Kind of transistor: BRT Base resistor: 47kΩ Frequency: 250MHz Base-emitter resistor: 47kΩ Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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DTC144EU3T106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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DTC144GUAT106 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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| 2SA2094TLQ | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96 Mounting: SMD Case: SC96 Polarisation: bipolar Power dissipation: 0.5W Type of transistor: PNP Kind of package: reel; tape Collector current: 2A Current gain: 120...270 Collector-emitter voltage: 60V Frequency: 300MHz |
Produkt ist nicht verfügbar |
| RB021VAM90TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 0.2A; SOD323HE; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD323HE
Max. off-state voltage: 90V
Max. forward voltage: 0.49V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.9mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 0.2A; SOD323HE; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD323HE
Max. off-state voltage: 90V
Max. forward voltage: 0.49V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.9mA
Produkt ist nicht verfügbar
| IMB2AT110 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| IMH1AT110 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
| IMH2AT110 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| IMH4AT110 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 50V
Type of transistor: NPN x2
Power dissipation: 300mW
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
Current gain: 100...600
Case: SC74; SOT457
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 50V
Type of transistor: NPN x2
Power dissipation: 300mW
Kind of transistor: BRT
Base resistor: 10kΩ
Frequency: 250MHz
Current gain: 100...600
Case: SC74; SOT457
Polarisation: bipolar
Produkt ist nicht verfügbar
| IMH9AT110 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 50V
Type of transistor: NPN x2
Power dissipation: 300mW
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Current gain: 68
Case: SC74; SOT457
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 50V
Type of transistor: NPN x2
Power dissipation: 300mW
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Current gain: 68
Case: SC74; SOT457
Polarisation: bipolar
Produkt ist nicht verfügbar
| IMT1AT110 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
| IMB10AT110 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Mounting: SMD
Kind of package: reel; tape
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Polarisation: bipolar
Frequency: 250MHz
Case: SC74; SOT457
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Mounting: SMD
Kind of package: reel; tape
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Polarisation: bipolar
Frequency: 250MHz
Case: SC74; SOT457
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
| DTC114ECAHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200/350mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 200/350mW
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200/350mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 200/350mW
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2624 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1475+ | 0.049 EUR |
| 1625+ | 0.044 EUR |
| 2000+ | 0.036 EUR |
| 2100+ | 0.034 EUR |
| DTC114ECAT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 575 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 575+ | 0.12 EUR |
| SML-D12M8WT86 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0603; yellow green; 10÷25mcd; 1.6x0.8x0.55mm; 2.2V; 20mA
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: yellow green
Luminosity: 10...25mcd
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 569...575nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
Operating voltage: 2.2V
Category: SMD colour LEDs
Description: LED; SMD; 0603; yellow green; 10÷25mcd; 1.6x0.8x0.55mm; 2.2V; 20mA
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: yellow green
Luminosity: 10...25mcd
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 569...575nm
LED lens: transparent
Power: 54mW
Front: flat
Manufacturer series: EXCELED™
Operating voltage: 2.2V
auf Bestellung 1211 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.24 EUR |
| 415+ | 0.17 EUR |
| 580+ | 0.12 EUR |
| R8005ANJFRGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 10A; 120W; D2PAK
Power dissipation: 120W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 800V
Drain current: 5A
On-state resistance: 3.8Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 10A; 120W; D2PAK
Power dissipation: 120W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 800V
Drain current: 5A
On-state resistance: 3.8Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
Produkt ist nicht verfügbar
| UMD12NFHATR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| RK7002BMHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SST3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SST3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SCS112AGC |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; 93W; TO220AC; tube
Kind of package: tube
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 167A
Power dissipation: 93W
Type of diode: Schottky rectifying
Technology: SiC
Heatsink thickness: max. 1.27mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 48A
Max. forward voltage: 1.7V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; 93W; TO220AC; tube
Kind of package: tube
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 167A
Power dissipation: 93W
Type of diode: Schottky rectifying
Technology: SiC
Heatsink thickness: max. 1.27mm
Mounting: THT
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. load current: 48A
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
| BAS40-06HYFHT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 40V
Max. load current: 120mA
Max. forward voltage: 1V
Load current: 120mA x2
Semiconductor structure: common anode; double
Max. forward impulse current: 0.6A
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Max. off-state voltage: 40V
Max. load current: 120mA
Max. forward voltage: 1V
Load current: 120mA x2
Semiconductor structure: common anode; double
Max. forward impulse current: 0.6A
Produkt ist nicht verfügbar
| QS8J13TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| QS8J2TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4A
Pulsed drain current: -12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4A
Pulsed drain current: -12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| QS8J4TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| QS8J5TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| QS8K11TCR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| QS8K13TCR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| QS8M31TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/2A; Idm: 4÷6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 3/2A
Pulsed drain current: 4...6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 137/266mΩ
Mounting: SMD
Gate charge: 4/7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/2A; Idm: 4÷6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 3/2A
Pulsed drain current: 4...6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 137/266mΩ
Mounting: SMD
Gate charge: 4/7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.15 EUR |
| 128+ | 0.56 EUR |
| 142+ | 0.5 EUR |
| 191+ | 0.38 EUR |
| 202+ | 0.35 EUR |
| QS8M51FRATR |
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| QS8M51TR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BA033CC0FP-E2 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...25V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3.3V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...25V
auf Bestellung 1706 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.32 EUR |
| 61+ | 1.19 EUR |
| 84+ | 0.86 EUR |
| 88+ | 0.82 EUR |
| BA05CC0FP-E2 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-3; SMD; ±2%
Operating temperature: -40...125°C
Mounting: SMD
Case: TO252-3
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Tolerance: ±2%
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 4...25V
Output current: 1A
Voltage drop: 0.3V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-3; SMD; ±2%
Operating temperature: -40...125°C
Mounting: SMD
Case: TO252-3
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Tolerance: ±2%
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 4...25V
Output current: 1A
Voltage drop: 0.3V
Produkt ist nicht verfügbar
| KDZVTR5.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
Produkt ist nicht verfügbar
| PDZVTR5.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 20µA
Produkt ist nicht verfügbar
| TFZVTR5.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
| CDZVT2R5.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 5.1V; SMD; reel,tape; SOD923; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 5.1V; SMD; reel,tape; SOD923; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Produkt ist nicht verfügbar
| EDZVT2R5.1B |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SC79; SOD523F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SC79; SOD523F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
auf Bestellung 7896 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1825+ | 0.039 EUR |
| 2250+ | 0.032 EUR |
| 2525+ | 0.028 EUR |
| 2925+ | 0.025 EUR |
| 3100+ | 0.023 EUR |
| R6009END3TL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 18A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| R6009JND3TL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 27A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 585mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 27A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 585mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| R6009JNJGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 27A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 585mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 27A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 585mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| R6009KNJTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 27A
Power dissipation: 94W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 27A
Power dissipation: 94W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SCS220KE2C |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 280W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 94A
Power dissipation: 280W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.9V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 280W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 94A
Power dissipation: 280W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.9V
Produkt ist nicht verfügbar
| SCS220KE2GC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 270W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 94A
Power dissipation: 270W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.9V
Leakage current: 0.2mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; 270W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 94A
Power dissipation: 270W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.9V
Leakage current: 0.2mA
Produkt ist nicht verfügbar
| SCS220KGC |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 210W
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 83A
Max. forward voltage: 1.6V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 310A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 210W
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 83A
Max. forward voltage: 1.6V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 310A
Produkt ist nicht verfügbar
| SCS220KGC17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 210W
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 83A
Max. forward voltage: 1.9V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 310A
Leakage current: 0.4mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 210W; TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 210W
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 83A
Max. forward voltage: 1.9V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 310A
Leakage current: 0.4mA
Produkt ist nicht verfügbar
| R6012JNJGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| R6012JNXC7G |
Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 36A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 36A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DTC123ECAHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Produkt ist nicht verfügbar
| DTC123EETL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 1558 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1280+ | 0.056 EUR |
| 1480+ | 0.049 EUR |
| DTC123EKAT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Produkt ist nicht verfügbar
| DTC123EU3T106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 10300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1550+ | 0.046 EUR |
| 1750+ | 0.041 EUR |
| 1975+ | 0.037 EUR |
| 2225+ | 0.032 EUR |
| 2350+ | 0.031 EUR |
| RSR010N10FHATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RSR010N10HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SH8MA4TB1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/-8.5A; Idm: 18A; 3W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/-8.5A
Pulsed drain current: 18A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 32.5/41.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/-8.5A; Idm: 18A; 3W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/-8.5A
Pulsed drain current: 18A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 32.5/41.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DTC144ECAHZGT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| DTC144ECAT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 245+ | 0.29 EUR |
| DTC144EEBTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC89
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC89
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| DTC144EEFRATL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2560 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1250+ | 0.057 EUR |
| 1548+ | 0.046 EUR |
| 1887+ | 0.038 EUR |
| 1995+ | 0.036 EUR |
| DTC144EETL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| DTC144EKAT146 | |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 580 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 580+ | 0.12 EUR |
| DTC144EMFHAT2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| DTC144EMT2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Case: SOT723
Collector-emitter voltage: 50V
Mounting: SMD
Collector current: 0.1A
Polarisation: bipolar
Power dissipation: 0.15W
Type of transistor: NPN
Current gain: 68
Kind of transistor: BRT
Base resistor: 47kΩ
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Case: SOT723
Collector-emitter voltage: 50V
Mounting: SMD
Collector current: 0.1A
Polarisation: bipolar
Power dissipation: 0.15W
Type of transistor: NPN
Current gain: 68
Kind of transistor: BRT
Base resistor: 47kΩ
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Produkt ist nicht verfügbar
| DTC144EU3T106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| DTC144GUAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| 2SA2094TLQ |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96
Mounting: SMD
Case: SC96
Polarisation: bipolar
Power dissipation: 0.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 2A
Current gain: 120...270
Collector-emitter voltage: 60V
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 500mW; SC96
Mounting: SMD
Case: SC96
Polarisation: bipolar
Power dissipation: 0.5W
Type of transistor: PNP
Kind of package: reel; tape
Collector current: 2A
Current gain: 120...270
Collector-emitter voltage: 60V
Frequency: 300MHz
Produkt ist nicht verfügbar