Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (103762) > Seite 749 nach 1730
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RV2C010UNT2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VML1006 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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RW1C026ZPT2CR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-WEMT Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V |
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RW1E025RPT2CR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 6-WEMT Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
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RYE002N05TCL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: EMT3 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V |
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RZF013P01TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V |
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RZM001P02T2L | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: VMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V |
auf Bestellung 200000 Stücke: Lieferzeit 10-14 Tag (e) |
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TT8J11TCR | Rohm Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TT8J13TCR | Rohm Semiconductor |
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TT8K11TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1A Supplier Device Package: 8-TSST |
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TT8K1TR | Rohm Semiconductor |
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TT8M1TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 8-TSST Part Status: Not For New Designs |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TT8M3TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 8-TSST |
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TT8U2TR | Rohm Semiconductor |
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UM6K33NTN | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 120mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UMT6 Part Status: Active |
auf Bestellung 651000 Stücke: Lieferzeit 10-14 Tag (e) |
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UM6K34NTCN | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 120mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V FET Feature: Logic Level Gate, 0.9V Drive Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: UMT6 Part Status: Active |
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VT6J1T2CR | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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VT6K1T2CR | Rohm Semiconductor |
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auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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VT6M1T2CR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 120mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: VMT6 Part Status: Last Time Buy |
auf Bestellung 64000 Stücke: Lieferzeit 10-14 Tag (e) |
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R6015ANZC8 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.15V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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R6015ENZC8 | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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R6020ANZC8 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.15V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6020ENZ1C9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6020ENZC8 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6024ENZ1C9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6024ENZC8 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6025ANZC8 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V |
Produkt ist nicht verfügbar |
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R6025FNZ1C9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 12.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6025FNZC8 | Rohm Semiconductor |
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auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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R6030ENZ1C9 | Rohm Semiconductor |
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auf Bestellung 93 Stücke: Lieferzeit 10-14 Tag (e) |
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R6030ENZC8 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6035ENZ1C9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6035ENZC8 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6046FNZ1C9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 23A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 25 V |
auf Bestellung 278 Stücke: Lieferzeit 10-14 Tag (e) |
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R6047ENZ1C9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6076ENZ1C9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V |
Produkt ist nicht verfügbar |
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R5009ANX | Rohm Semiconductor |
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auf Bestellung 485 Stücke: Lieferzeit 10-14 Tag (e) |
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BU9794AKV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Display Type: LCD Mounting Type: Surface Mount Interface: 3-Wire Serial Configuration: 140 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V ~ 5.5V Supplier Device Package: 64-VQFP (10x10) Part Status: Active Current - Supply: 5 µA |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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BU9794AKV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 64-LQFP Display Type: LCD Mounting Type: Surface Mount Interface: 3-Wire Serial Configuration: 140 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.5V ~ 5.5V Supplier Device Package: 64-VQFP (10x10) Part Status: Active Current - Supply: 5 µA |
auf Bestellung 3835 Stücke: Lieferzeit 10-14 Tag (e) |
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BU97950FUV-E2 | Rohm Semiconductor |
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BU97981KV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 64-LQFP Display Type: LCD Mounting Type: Surface Mount Interface: 3-Wire Serial Configuration: 196 Segment Operating Temperature: -30°C ~ 75°C Voltage - Supply: 1.8V ~ 3.6V Supplier Device Package: 64-VQFP (10x10) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BU97950FUV-E2 | Rohm Semiconductor |
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MCR004J-SMPLBK | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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MCR006F-SMPLBK | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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MCR006J-SMPLBK | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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MCR01F-SMPLBK | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MCR01J-SMPLBK | Rohm Semiconductor |
![]() Packaging: Box Resistance (Ohms): 0.0 ~ 1M Power (Watts): 1/16W Tolerance: Jumper, ±5% Mounting Type: Surface Mount Quantity: 7300 Pieces (146 Values - 50 Each) Kit Type: Thick Film Packages Included: 0402 (1005 Metric) |
Produkt ist nicht verfügbar |
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MNR02J-SMPLBK | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MNR04J-SMPLBK | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CSL0406WBCW1 | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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RPI-1035 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD Module Output Type: NPN Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -25°C ~ 85°C Voltage - Supply: 5V Operating Angle: ±90° Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SML522BU1WT86 | Rohm Semiconductor |
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auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SML-A12MTT86J | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Color: Green Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 40mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.1V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 570nm Supplier Device Package: 1611(0605) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SML-A12UTT86J | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Color: Red Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 100mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 624nm Supplier Device Package: 1611(0605) Lens Transparency: Clear Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SML-A12WTT86J | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Color: Yellow Size / Dimension: 1.60mm L x 1.15mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 63mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 590nm Supplier Device Package: 1611(0605) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.55mm |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMLA13BC8TT86 | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SML-D12FWT86 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Green Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 18mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: White Current - Test: 20mA Height (Max): 0.65mm Wavelength - Dominant: 565nm Supplier Device Package: 1608 (0603) Lens Transparency: Diffused Part Status: Not For New Designs Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMLE13BC8TT86 | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SMLE13EC8TT86 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Color: Blue-Green Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 120mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 3V Lens Color: Colorless Current - Test: 5mA Height (Max): 0.46mm Wavelength - Dominant: 527nm Supplier Device Package: 1608 (0603) Lens Transparency: Clear Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
auf Bestellung 3318 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SML-H12D8TT86 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Color: Orange Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 63mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 605nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SML-H12P8TT86 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Color: Green Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 4mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 560nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RV2C010UNT2L |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 1A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VML1006
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET N-CH 20V 1A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VML1006
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.11 EUR |
RW1C026ZPT2CR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A 6WEMT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Description: MOSFET P-CH 20V 2.5A 6WEMT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RW1E025RPT2CR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A 6WEMT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Description: MOSFET P-CH 30V 2.5A 6WEMT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RYE002N05TCL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Description: MOSFET N-CH 50V 200MA EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RZF013P01TL |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
Description: MOSFET P-CH 12V 1.3A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RZM001P02T2L |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 100MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Description: MOSFET P-CH 20V 100MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.049 EUR |
16000+ | 0.045 EUR |
24000+ | 0.042 EUR |
40000+ | 0.039 EUR |
TT8J11TCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 3.5A TSST8
Description: MOSFET 2P-CH 12V 3.5A TSST8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
TT8J13TCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 2.5A TSST8
Description: MOSFET 2P-CH 12V 2.5A TSST8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TT8K11TCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3A 8TSST
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSST
Description: MOSFET 2N-CH 30V 3A 8TSST
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSST
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TT8K1TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 2.5A TSST8
Description: MOSFET 2N-CH 20V 2.5A TSST8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TT8M1TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 2.5A 8TSST
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-TSST
Part Status: Not For New Designs
Description: MOSFET N/P-CH 20V 2.5A 8TSST
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-TSST
Part Status: Not For New Designs
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.29 EUR |
6000+ | 0.27 EUR |
TT8M3TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 2.5A 8TSST
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-TSST
Description: MOSFET N/P-CH 20V 2.5A 8TSST
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-TSST
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TT8U2TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.4A TSST8
Description: MOSFET P-CH 20V 2.4A TSST8
Produkt ist nicht verfügbar
Im Einkaufswagen
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UM6K33NTN |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Description: MOSFET 2N-CH 50V 0.2A UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
auf Bestellung 651000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.1 EUR |
9000+ | 0.088 EUR |
21000+ | 0.085 EUR |
30000+ | 0.084 EUR |
UM6K34NTCN |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 0.9V Drive
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Description: MOSFET 2N-CH 50V 0.2A UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 0.9V Drive
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
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VT6J1T2CR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 0.1A VMT6
Description: MOSFET 2P-CH 20V 0.1A VMT6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VT6K1T2CR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 0.1A VMT6
Description: MOSFET 2N-CH 20V 0.1A VMT6
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
VT6M1T2CR |
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Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 0.1A VMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT6
Part Status: Last Time Buy
Description: MOSFET N/P-CH 20V 0.1A VMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT6
Part Status: Last Time Buy
auf Bestellung 64000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.11 EUR |
R6015ANZC8 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6015ENZC8 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO3PF
Description: MOSFET N-CH 600V 15A TO3PF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6020ANZC8 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6020ENZ1C9 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6020ENZC8 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6024ENZ1C9 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6024ENZC8 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Description: MOSFET N-CH 600V 24A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6025ANZC8 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V
Description: MOSFET N-CH 600V 25A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6025FNZ1C9 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6025FNZC8 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 25A TO3PF
Description: MOSFET N-CH 600V 25A TO3PF
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
R6030ENZ1C9 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO247
Description: MOSFET N-CH 600V 30A TO247
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
R6030ENZC8 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6035ENZ1C9 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Description: MOSFET N-CH 600V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6035ENZC8 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Description: MOSFET N-CH 600V 35A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6046FNZ1C9 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 25 V
Description: MOSFET N-CH 600V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 25 V
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 19.1 EUR |
10+ | 16.37 EUR |
100+ | 13.64 EUR |
R6047ENZ1C9 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6076ENZ1C9 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Description: MOSFET N-CH 600V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R5009ANX |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 500V 9A TO220
Description: MOSFET N-CH 500V 9A TO220
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.64 EUR |
10+ | 2.37 EUR |
100+ | 1.84 EUR |
BU9794AKV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC DRVR 140 SEGMENT 64VQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 5 µA
Description: IC DRVR 140 SEGMENT 64VQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 5 µA
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 2.55 EUR |
2000+ | 2.42 EUR |
BU9794AKV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC DRVR 140 SEGMENT 64VQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 5 µA
Description: IC DRVR 140 SEGMENT 64VQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 5 µA
auf Bestellung 3835 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.82 EUR |
10+ | 4.33 EUR |
25+ | 4.1 EUR |
100+ | 3.55 EUR |
250+ | 3.37 EUR |
500+ | 3.02 EUR |
BU97950FUV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC LCD DVR 35X8COM IND 48TSSOP
Description: IC LCD DVR 35X8COM IND 48TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BU97981KV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC DRVR 196 SEGMENT 64VQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 196 Segment
Operating Temperature: -30°C ~ 75°C
Voltage - Supply: 1.8V ~ 3.6V
Supplier Device Package: 64-VQFP (10x10)
Description: IC DRVR 196 SEGMENT 64VQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 196 Segment
Operating Temperature: -30°C ~ 75°C
Voltage - Supply: 1.8V ~ 3.6V
Supplier Device Package: 64-VQFP (10x10)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BU97950FUV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC LCD DVR 35X8COM IND 48TSSOP
Description: IC LCD DVR 35X8COM IND 48TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCR004J-SMPLBK |
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Hersteller: Rohm Semiconductor
Description: RESISTR KIT 0-2.7M 1/32W 3350PCS
Description: RESISTR KIT 0-2.7M 1/32W 3350PCS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCR006F-SMPLBK |
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Hersteller: Rohm Semiconductor
Description: RESISTR KIT 100-1M 1/20W 4850PCS
Description: RESISTR KIT 100-1M 1/20W 4850PCS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCR006J-SMPLBK |
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Hersteller: Rohm Semiconductor
Description: RESISTOR KIT 0-1M 1/20W 6100PCS
Description: RESISTOR KIT 0-1M 1/20W 6100PCS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCR01F-SMPLBK |
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Hersteller: Rohm Semiconductor
Description: RES KIT 10-2.2M 1/16W 6450PCS
Description: RES KIT 10-2.2M 1/16W 6450PCS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCR01J-SMPLBK |
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Hersteller: Rohm Semiconductor
Description: RESISTOR KIT 0-1M 1/16W 7300PCS
Packaging: Box
Resistance (Ohms): 0.0 ~ 1M
Power (Watts): 1/16W
Tolerance: Jumper, ±5%
Mounting Type: Surface Mount
Quantity: 7300 Pieces (146 Values - 50 Each)
Kit Type: Thick Film
Packages Included: 0402 (1005 Metric)
Description: RESISTOR KIT 0-1M 1/16W 7300PCS
Packaging: Box
Resistance (Ohms): 0.0 ~ 1M
Power (Watts): 1/16W
Tolerance: Jumper, ±5%
Mounting Type: Surface Mount
Quantity: 7300 Pieces (146 Values - 50 Each)
Kit Type: Thick Film
Packages Included: 0402 (1005 Metric)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MNR02J-SMPLBK |
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Hersteller: Rohm Semiconductor
Description: RESISTOR KIT 0-1M 1/16W 2600PCS
Description: RESISTOR KIT 0-1M 1/16W 2600PCS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MNR04J-SMPLBK |
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Hersteller: Rohm Semiconductor
Description: RESISTR KIT 0-100K 1/16W 2500PCS
Description: RESISTR KIT 0-100K 1/16W 2500PCS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CSL0406WBCW1 |
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Hersteller: Rohm Semiconductor
Description: LED WHITE DIFFUSED 2812 SMD
Description: LED WHITE DIFFUSED 2812 SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RPI-1035 |
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Hersteller: Rohm Semiconductor
Description: IC DETECTOR 4 DIRECTION SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD Module
Output Type: NPN
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 5V
Operating Angle: ±90°
Part Status: Last Time Buy
Description: IC DETECTOR 4 DIRECTION SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD Module
Output Type: NPN
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 5V
Operating Angle: ±90°
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SML522BU1WT86 |
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Hersteller: Rohm Semiconductor
Description: LED BLUE/RED DIFFUSED 1315 SMD
Description: LED BLUE/RED DIFFUSED 1315 SMD
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SML-A12MTT86J |
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Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 570nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED GREEN CLEAR 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Green
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 570nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.18 EUR |
SML-A12UTT86J |
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Hersteller: Rohm Semiconductor
Description: LED RED CLEAR 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Red
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 100mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 624nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED RED CLEAR 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Red
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 100mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 624nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SML-A12WTT86J |
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Hersteller: Rohm Semiconductor
Description: LED YELLOW CLEAR 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Yellow
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 63mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 590nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
Description: LED YELLOW CLEAR 1611 SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Yellow
Size / Dimension: 1.60mm L x 1.15mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 63mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 590nm
Supplier Device Package: 1611(0605)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.55mm
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.18 EUR |
6000+ | 0.17 EUR |
SMLA13BC8TT86 |
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Hersteller: Rohm Semiconductor
Description: LED BLUE CLEAR 2SMD R/A
Description: LED BLUE CLEAR 2SMD R/A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SML-D12FWT86 |
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Hersteller: Rohm Semiconductor
Description: LED GREEN DIFFUSED 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 18mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: White
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 565nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Diffused
Part Status: Not For New Designs
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED GREEN DIFFUSED 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 18mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: White
Current - Test: 20mA
Height (Max): 0.65mm
Wavelength - Dominant: 565nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Diffused
Part Status: Not For New Designs
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.14 EUR |
15000+ | 0.13 EUR |
SMLE13BC8TT86 |
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Hersteller: Rohm Semiconductor
Description: LED BLUE CLEAR 1608 SMD
Description: LED BLUE CLEAR 1608 SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMLE13EC8TT86 |
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Hersteller: Rohm Semiconductor
Description: LED BLUE-GREEN CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Blue-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 120mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.46mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED BLUE-GREEN CLEAR 1608 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Blue-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 120mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.46mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1608 (0603)
Lens Transparency: Clear
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
auf Bestellung 3318 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SML-H12D8TT86 |
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Hersteller: Rohm Semiconductor
Description: LED ORANGE CLEAR 0805 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Orange
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 63mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 605nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Description: LED ORANGE CLEAR 0805 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Orange
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 63mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 605nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SML-H12P8TT86 |
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Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Description: LED GREEN CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.22 EUR |