Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (103280) > Seite 841 nach 1722
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RB521VM-30FHTE-17 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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RB521VM-30FHTE-17 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V Qualification: AEC-Q101 |
auf Bestellung 9426 Stücke: Lieferzeit 10-14 Tag (e) |
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RB521SM-60T2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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RTL030P02TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 10 V |
Produkt ist nicht verfügbar |
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RTL030P02TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 10 V |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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BH28RB1WGUT-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 72 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-VCSP60N1 (1x1.04) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active PSRR: 63dB (1kHz) Voltage Dropout (Max): 0.15V @ 100mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
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BH28RB1WGUT-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 72 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-VCSP60N1 (1x1.04) Voltage - Output (Min/Fixed): 2.8V Control Features: Enable Part Status: Active PSRR: 63dB (1kHz) Voltage Dropout (Max): 0.15V @ 100mA Protection Features: Over Current, Over Temperature |
auf Bestellung 1430 Stücke: Lieferzeit 10-14 Tag (e) |
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BH18RB1WGUT-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 72 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-VCSP60N1 (1x1.04) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 63dB (1kHz) Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
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BH18RB1WGUT-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 4-WFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 72 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-VCSP60N1 (1x1.04) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 63dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 830 Stücke: Lieferzeit 10-14 Tag (e) |
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BH31RB1WGUT-E2 | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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BD50FA1FP3-ZTL | Rohm Semiconductor |
Description: IC REG LINEAR 5V 100MA SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -25°C ~ 85°C (TA) Output Configuration: Positive Voltage - Input (Max): 25V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active Voltage Dropout (Max): 3V @ 100mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 450 µA |
Produkt ist nicht verfügbar |
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BD50FA1FP3-ZTL | Rohm Semiconductor |
Description: IC REG LINEAR 5V 100MA SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -25°C ~ 85°C (TA) Output Configuration: Positive Voltage - Input (Max): 25V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active Voltage Dropout (Max): 3V @ 100mA Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 450 µA |
auf Bestellung 853 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3060ARC14 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V Power Dissipation (Max): 165W Vgs(th) (Max) @ Id: 5.6V @ 6.67mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V |
auf Bestellung 344 Stücke: Lieferzeit 10-14 Tag (e) |
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BSM080D12P2C008 | Rohm Semiconductor |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 600W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs(th) (Max) @ Id: 4V @ 13.2mA Supplier Device Package: Module Part Status: Active |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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SLA-360LT3FXF | Rohm Semiconductor |
Description: LED RED GAAIAS Packaging: Bulk Package / Case: Radial Color: Red Mounting Type: Through Hole Millicandela Rating: 68mcd Voltage - Forward (Vf) (Typ): 1.75V Current - Test: 20mA Viewing Angle: 40° Height (Max): 5.50mm Wavelength - Peak: 660nm Supplier Device Package: T-1 Part Status: Obsolete Lens Style: Round with Domed Top Lens Size: 3.10mm Dia |
Produkt ist nicht verfügbar |
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BD99954MWV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Number of Cells: 1 ~ 4 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C, SMBus Operating Temperature: -30°C ~ 85°C Battery Chemistry: Lithium Ion Supplier Device Package: UQFN040V5050 Fault Protection: Over Voltage, Short Circuit |
Produkt ist nicht verfügbar |
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BD99954MWV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Number of Cells: 1 ~ 4 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C, SMBus Operating Temperature: -30°C ~ 85°C Battery Chemistry: Lithium Ion Supplier Device Package: UQFN040V5050 Fault Protection: Over Voltage, Short Circuit |
auf Bestellung 2232 Stücke: Lieferzeit 10-14 Tag (e) |
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BD99954MWV-EVK-101 | Rohm Semiconductor | Description: EVAL BOARD FOR BD99954 |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BD99954GW-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 41-UFBGA, CSPBGA Number of Cells: 1 ~ 4 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C, SMBus Operating Temperature: -30°C ~ 85°C Battery Chemistry: Lithium Ion Supplier Device Package: UCSP55M3C Fault Protection: Over Voltage, Short Circuit Part Status: Active |
Produkt ist nicht verfügbar |
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BD99954GW-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 41-UFBGA, CSPBGA Number of Cells: 1 ~ 4 Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C, SMBus Operating Temperature: -30°C ~ 85°C Battery Chemistry: Lithium Ion Supplier Device Package: UCSP55M3C Fault Protection: Over Voltage, Short Circuit Part Status: Active |
Produkt ist nicht verfügbar |
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RB560VM-40TE-17 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA Current - Reverse Leakage @ Vr: 40 µA @ 40 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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RB560VM-40TE-17 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA Current - Reverse Leakage @ Vr: 40 µA @ 40 V |
auf Bestellung 20594 Stücke: Lieferzeit 10-14 Tag (e) |
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BD49L49G-TL | Rohm Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BD49L49G-TL | Rohm Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD49L51G-TL | Rohm Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD49L51G-TL | Rohm Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD49L52G-TL | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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BD49L44G-TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 4.4V Supplier Device Package: 3-SSOP Part Status: Not For New Designs DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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BD49L44G-TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 4.4V Supplier Device Package: 3-SSOP Part Status: Not For New Designs DigiKey Programmable: Not Verified |
auf Bestellung 2973 Stücke: Lieferzeit 10-14 Tag (e) |
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BD49L50G-TL | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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BD49L50G-TL | Rohm Semiconductor |
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auf Bestellung 2958 Stücke: Lieferzeit 10-14 Tag (e) |
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BD49L48G-TL | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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BD49L48G-TL | Rohm Semiconductor |
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auf Bestellung 2878 Stücke: Lieferzeit 10-14 Tag (e) |
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BD49L55G-TL | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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BD49L55G-TL | Rohm Semiconductor |
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auf Bestellung 2690 Stücke: Lieferzeit 10-14 Tag (e) |
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RESD1CANT116 | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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RESD1CANT116 | Rohm Semiconductor |
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auf Bestellung 2635 Stücke: Lieferzeit 10-14 Tag (e) |
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BD62018AFS-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-SOP (0.213", 5.40mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: Parallel Operating Temperature: -40°C ~ 110°C (TJ) Output Configuration: Half Bridge (6) Voltage - Supply: 10V ~ 18V Applications: Fan Controller Technology: Power MOSFET Voltage - Load: 5V Supplier Device Package: 24-SSOP-A Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
Produkt ist nicht verfügbar |
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BD62018AFS-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 24-SOP (0.213", 5.40mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: Parallel Operating Temperature: -40°C ~ 110°C (TJ) Output Configuration: Half Bridge (6) Voltage - Supply: 10V ~ 18V Applications: Fan Controller Technology: Power MOSFET Voltage - Load: 5V Supplier Device Package: 24-SSOP-A Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
auf Bestellung 1928 Stücke: Lieferzeit 10-14 Tag (e) |
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RF4L055GNTCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V |
auf Bestellung 13791 Stücke: Lieferzeit 10-14 Tag (e) |
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BU2JJA2DG-CTR | Rohm Semiconductor |
Description: IC REG LINEAR 2.85V 100MA 5SSOP Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 2.85V Control Features: Enable PSRR: 68dB (1kHz) Voltage Dropout (Max): 0.155V @ 100mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
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BU2JJA2DG-CTR | Rohm Semiconductor |
Description: IC REG LINEAR 2.85V 100MA 5SSOP Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 2.85V Control Features: Enable PSRR: 68dB (1kHz) Voltage Dropout (Max): 0.155V @ 100mA Protection Features: Over Current, Over Temperature |
auf Bestellung 2216 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ5E025TNTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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RQ5E025TNTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V |
auf Bestellung 9630 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS306AHGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
Produkt ist nicht verfügbar |
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SCS302AHGC9 | Rohm Semiconductor |
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auf Bestellung 873 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS304AHGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
auf Bestellung 681 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS308AHGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 400pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |
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SCS308AJTLL | Rohm Semiconductor |
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Produkt ist nicht verfügbar |
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SCS308AJTLL | Rohm Semiconductor |
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auf Bestellung 981 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS304AMC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SCS306AMC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220FM Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
auf Bestellung 534 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS308AMC | Rohm Semiconductor |
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auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS302AJTLL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 2.15A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SCS302AJTLL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 2.15A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V |
auf Bestellung 499 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS304AJTLL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SCS304AJTLL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
auf Bestellung 974 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS306AJTLL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: LPTL Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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R6011END3TL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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R6011END3TL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 371 Stücke: Lieferzeit 10-14 Tag (e) |
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RB521VM-30FHTE-17 |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.07 EUR |
6000+ | 0.063 EUR |
9000+ | 0.061 EUR |
RB521VM-30FHTE-17 |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Qualification: AEC-Q101
auf Bestellung 9426 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 0.39 EUR |
73+ | 0.24 EUR |
119+ | 0.15 EUR |
500+ | 0.12 EUR |
1000+ | 0.1 EUR |
RB521SM-60T2R |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 200MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 200MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.045 EUR |
16000+ | 0.042 EUR |
24000+ | 0.04 EUR |
RTL030P02TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 10 V
Description: MOSFET P-CH 20V 3A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RTL030P02TR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 10 V
Description: MOSFET P-CH 20V 3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 10 V
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.95 EUR |
22+ | 0.82 EUR |
100+ | 0.57 EUR |
BH28RB1WGUT-E2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LIN 2.8V 150MA 4-VCSP60N1
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 2.8V 150MA 4-VCSP60N1
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BH28RB1WGUT-E2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LIN 2.8V 150MA 4-VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 2.8V 150MA 4-VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 1430 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.41 EUR |
18+ | 1.01 EUR |
25+ | 0.91 EUR |
100+ | 0.8 EUR |
250+ | 0.75 EUR |
500+ | 0.71 EUR |
1000+ | 0.69 EUR |
BH18RB1WGUT-E2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LIN 1.8V 150MA 4-VCSP60N1
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 1.8V 150MA 4-VCSP60N1
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BH18RB1WGUT-E2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LIN 1.8V 150MA 4-VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 1.8V 150MA 4-VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-VCSP60N1 (1x1.04)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 830 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.48 EUR |
17+ | 1.06 EUR |
25+ | 0.96 EUR |
100+ | 0.84 EUR |
250+ | 0.79 EUR |
500+ | 0.75 EUR |
BH31RB1WGUT-E2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LIN 3.1V 150MA 4VCSP60N1
Description: IC REG LIN 3.1V 150MA 4VCSP60N1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD50FA1FP3-ZTL |
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 450 µA
Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 450 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD50FA1FP3-ZTL |
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 450 µA
Description: IC REG LINEAR 5V 100MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -25°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 450 µA
auf Bestellung 853 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 1.27 EUR |
24+ | 0.76 EUR |
28+ | 0.63 EUR |
100+ | 0.48 EUR |
250+ | 0.4 EUR |
500+ | 0.36 EUR |
SCT3060ARC14 |
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Hersteller: Rohm Semiconductor
Description: SICFET N-CH 650V 39A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
Description: SICFET N-CH 650V 39A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Power Dissipation (Max): 165W
Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
auf Bestellung 344 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 25.31 EUR |
30+ | 24.26 EUR |
BSM080D12P2C008 |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 1200V 80A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 600W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 13.2mA
Supplier Device Package: Module
Part Status: Active
Description: MOSFET 2N-CH 1200V 80A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 600W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Vgs(th) (Max) @ Id: 4V @ 13.2mA
Supplier Device Package: Module
Part Status: Active
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 534.85 EUR |
SLA-360LT3FXF |
Hersteller: Rohm Semiconductor
Description: LED RED GAAIAS
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 68mcd
Voltage - Forward (Vf) (Typ): 1.75V
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.50mm
Wavelength - Peak: 660nm
Supplier Device Package: T-1
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
Description: LED RED GAAIAS
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole
Millicandela Rating: 68mcd
Voltage - Forward (Vf) (Typ): 1.75V
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.50mm
Wavelength - Peak: 660nm
Supplier Device Package: T-1
Part Status: Obsolete
Lens Style: Round with Domed Top
Lens Size: 3.10mm Dia
Produkt ist nicht verfügbar
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BD99954MWV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC BATT LI-ION 1-4C UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UQFN040V5050
Fault Protection: Over Voltage, Short Circuit
Description: IC BATT LI-ION 1-4C UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UQFN040V5050
Fault Protection: Over Voltage, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
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BD99954MWV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC BATT LI-ION 1-4C UQFN040V5050
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UQFN040V5050
Fault Protection: Over Voltage, Short Circuit
Description: IC BATT LI-ION 1-4C UQFN040V5050
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UQFN040V5050
Fault Protection: Over Voltage, Short Circuit
auf Bestellung 2232 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.88 EUR |
10+ | 8.84 EUR |
25+ | 7.8 EUR |
100+ | 6.63 EUR |
250+ | 6.06 EUR |
500+ | 5.71 EUR |
1000+ | 5.43 EUR |
BD99954MWV-EVK-101 |
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD99954
Description: EVAL BOARD FOR BD99954
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BD99954GW-E2 |
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Hersteller: Rohm Semiconductor
Description: IC BAT MON LI-ION 1-4C UCSP55M3C
Packaging: Tape & Reel (TR)
Package / Case: 41-UFBGA, CSPBGA
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UCSP55M3C
Fault Protection: Over Voltage, Short Circuit
Part Status: Active
Description: IC BAT MON LI-ION 1-4C UCSP55M3C
Packaging: Tape & Reel (TR)
Package / Case: 41-UFBGA, CSPBGA
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UCSP55M3C
Fault Protection: Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD99954GW-E2 |
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Hersteller: Rohm Semiconductor
Description: IC BAT MON LI-ION 1-4C UCSP55M3C
Packaging: Cut Tape (CT)
Package / Case: 41-UFBGA, CSPBGA
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UCSP55M3C
Fault Protection: Over Voltage, Short Circuit
Part Status: Active
Description: IC BAT MON LI-ION 1-4C UCSP55M3C
Packaging: Cut Tape (CT)
Package / Case: 41-UFBGA, CSPBGA
Number of Cells: 1 ~ 4
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C, SMBus
Operating Temperature: -30°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: UCSP55M3C
Fault Protection: Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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RB560VM-40TE-17 |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 500MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.083 EUR |
6000+ | 0.076 EUR |
9000+ | 0.073 EUR |
15000+ | 0.072 EUR |
RB560VM-40TE-17 |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
auf Bestellung 20594 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 0.49 EUR |
60+ | 0.29 EUR |
103+ | 0.17 EUR |
500+ | 0.14 EUR |
1000+ | 0.12 EUR |
BD49L49G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BD49L49G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BD49L51G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BD49L51G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BD49L52G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
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BD49L44G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.4V
Supplier Device Package: 3-SSOP
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.4V
Supplier Device Package: 3-SSOP
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD49L44G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.4V
Supplier Device Package: 3-SSOP
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 4.4V
Supplier Device Package: 3-SSOP
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 2973 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 1.04 EUR |
29+ | 0.62 EUR |
35+ | 0.51 EUR |
100+ | 0.39 EUR |
250+ | 0.33 EUR |
500+ | 0.29 EUR |
1000+ | 0.26 EUR |
BD49L50G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD49L50G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
auf Bestellung 2958 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BD49L48G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD49L48G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
auf Bestellung 2878 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BD49L55G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD49L55G-TL |
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Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
auf Bestellung 2690 Stücke:
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RESD1CANT116 |
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Hersteller: Rohm Semiconductor
Description: TVS DIODE 24VWM 44VC SSD3
Description: TVS DIODE 24VWM 44VC SSD3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RESD1CANT116 |
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Hersteller: Rohm Semiconductor
Description: TVS DIODE 24VWM 44VC SSD3
Description: TVS DIODE 24VWM 44VC SSD3
auf Bestellung 2635 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
BD62018AFS-E2 |
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Hersteller: Rohm Semiconductor
Description: IC MOTOR DRV PWR MOSFET 24SSOP-A
Packaging: Tape & Reel (TR)
Package / Case: 24-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 110°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 10V ~ 18V
Applications: Fan Controller
Technology: Power MOSFET
Voltage - Load: 5V
Supplier Device Package: 24-SSOP-A
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRV PWR MOSFET 24SSOP-A
Packaging: Tape & Reel (TR)
Package / Case: 24-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 110°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 10V ~ 18V
Applications: Fan Controller
Technology: Power MOSFET
Voltage - Load: 5V
Supplier Device Package: 24-SSOP-A
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD62018AFS-E2 |
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Hersteller: Rohm Semiconductor
Description: IC MOTOR DRV PWR MOSFET 24SSOP-A
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 110°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 10V ~ 18V
Applications: Fan Controller
Technology: Power MOSFET
Voltage - Load: 5V
Supplier Device Package: 24-SSOP-A
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRV PWR MOSFET 24SSOP-A
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 110°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 10V ~ 18V
Applications: Fan Controller
Technology: Power MOSFET
Voltage - Load: 5V
Supplier Device Package: 24-SSOP-A
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 1928 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.47 EUR |
10+ | 3.34 EUR |
25+ | 3.06 EUR |
100+ | 2.75 EUR |
250+ | 2.6 EUR |
500+ | 2.51 EUR |
1000+ | 2.43 EUR |
RF4L055GNTCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
Description: MOSFET N-CH 60V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
auf Bestellung 13791 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.36 EUR |
15+ | 1.24 EUR |
100+ | 0.87 EUR |
500+ | 0.71 EUR |
1000+ | 0.65 EUR |
BU2JJA2DG-CTR |
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.85V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.85V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BU2JJA2DG-CTR |
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 2.85V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.85V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2216 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.51 EUR |
14+ | 1.35 EUR |
25+ | 1.28 EUR |
100+ | 1.05 EUR |
250+ | 0.98 EUR |
500+ | 0.87 EUR |
1000+ | 0.69 EUR |
RQ5E025TNTL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.27 EUR |
6000+ | 0.25 EUR |
9000+ | 0.24 EUR |
RQ5E025TNTL |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
auf Bestellung 9630 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.95 EUR |
28+ | 0.64 EUR |
100+ | 0.44 EUR |
500+ | 0.34 EUR |
1000+ | 0.31 EUR |
SCS306AHGC9 |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCS302AHGC9 |
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Hersteller: Rohm Semiconductor
Description: SHORTER RECOVERY TIME, ENABLING
Description: SHORTER RECOVERY TIME, ENABLING
auf Bestellung 873 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SCS304AHGC9 |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 4A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 4A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 681 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.91 EUR |
50+ | 1.92 EUR |
100+ | 1.73 EUR |
500+ | 1.39 EUR |
SCS308AHGC9 |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 8A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 400pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 8A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 400pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCS308AJTLL |
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Hersteller: Rohm Semiconductor
Description: DIODES SILICON CARBIDE
Description: DIODES SILICON CARBIDE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCS308AJTLL |
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Hersteller: Rohm Semiconductor
Description: DIODES SILICON CARBIDE
Description: DIODES SILICON CARBIDE
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.73 EUR |
10+ | 7.85 EUR |
100+ | 6.43 EUR |
500+ | 5.47 EUR |
SCS304AMC |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 4A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 4A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCS306AMC |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO220FM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220FM
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 534 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.25 EUR |
50+ | 4.95 EUR |
100+ | 4.24 EUR |
500+ | 3.77 EUR |
SCS308AMC |
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Hersteller: Rohm Semiconductor
Description: DIODES SILICON CARBIDE
Description: DIODES SILICON CARBIDE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SCS302AJTLL |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 2.15A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
Description: DIODE SIL CARB 650V 2.15A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCS302AJTLL |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARB 650V 2.15A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
Description: DIODE SIL CARB 650V 2.15A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2.15A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.51 EUR |
10+ | 3.47 EUR |
100+ | 2.42 EUR |
SCS304AJTLL |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 4A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SCS304AJTLL |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 4A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A LPTL
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.72 EUR |
10+ | 3.3 EUR |
100+ | 2.66 EUR |
SCS306AJTLL |
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Hersteller: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 6A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A LPTL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: LPTL
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 2.69 EUR |
R6011END3TL1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6011END3TL1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.35 EUR |
10+ | 4.81 EUR |
100+ | 3.87 EUR |