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LF-3011VK LF-3011VK Rohm Semiconductor datasheet?p=LF-3011VK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DISPLAY 7SEG 0.32" SGL RED 10SMD
Power Dissipation (Max): 320mW
Wavelength - Peak: 650nm
Current - Test: 10mA
Voltage - Forward (Vf) (Typ): 2V
Digit/Alpha Size: 0.32" (8.00mm)
Common Pin: Common Cathode
Millicandela Rating: 10mcd
Number of Characters: 1
Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm)
Display Type: 7-Segment
Color: Red
Package / Case: 10-SMD, Gull Wing
Packaging: Cut Tape (CT)
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R6070JNZ4C13 R6070JNZ4C13 Rohm Semiconductor datasheet?p=R6070JNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 70A TO-247, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 35A, 15V
Power Dissipation (Max): 770W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 100 V
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BZX84B11VLYFHT116 BZX84B11VLYFHT116 Rohm Semiconductor datasheet?p=BZX84B11VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 11V 250MW SOT23
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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BZX84B11VLYT116 BZX84B11VLYT116 Rohm Semiconductor datasheet?p=BZX84B11VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 11V 250MW SOT23
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZX84B11VLYFHT116 BZX84B11VLYFHT116 Rohm Semiconductor datasheet?p=BZX84B11VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 11V 250MW SOT23
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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BZX84B11VLYT116 BZX84B11VLYT116 Rohm Semiconductor datasheet?p=BZX84B11VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 11V 250MW SOT23
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BU46K252G-TL BU46K252G-TL Rohm Semiconductor datasheet?p=BU46K252G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 120ms Minimum
Voltage - Threshold: 2.5V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
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BU46K252G-TL BU46K252G-TL Rohm Semiconductor datasheet?p=BU46K252G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 120ms Minimum
Voltage - Threshold: 2.5V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
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BU45L332G-TL BU45L332G-TL Rohm Semiconductor bu45kxxxg-e.pdf Description: IC SUPERVISOR 1 CHANNEL 3SSOP
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BU45L332G-TL BU45L332G-TL Rohm Semiconductor bu45kxxxg-e.pdf Description: IC SUPERVISOR 1 CHANNEL 3SSOP
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BM64377S-VA BM64377S-VA Rohm Semiconductor datasheet?p=BM64377S-VA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V IGBT INTELLIGENT POWER MODU
Voltage: 600 V
Current: 30 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
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BM63377S-VC BM63377S-VC Rohm Semiconductor datasheet?p=BM63377S-VC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V IGBT INTELLIGENT POWER MODU
Voltage: 600 V
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Packaging: Tube
Current: 30 A
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BM63377S-VA BM63377S-VA Rohm Semiconductor datasheet?p=BM63377S-VA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V IGBT INTELLIGENT POWER MODU
Voltage: 600 V
Current: 30 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
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RFV12TJ6SGC9 RFV12TJ6SGC9 Rohm Semiconductor datasheet?p=RFV12TJ6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STD 600V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RFV15TJ6SGC9 RFV15TJ6SGC9 Rohm Semiconductor datasheet?p=RFV15TJ6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STD 600V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RFNL15TJ6SGC9 RFNL15TJ6SGC9 Rohm Semiconductor datasheet?p=RFNL15TJ6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GP 600V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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RFUH5TF6SC9 RFUH5TF6SC9 Rohm Semiconductor rfuh5tf6s-e.pdf Description: RFUH5TF6S IS SUPER FAST RECOVERY
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RFN20TJ6SFHGC9 RFN20TJ6SFHGC9 Rohm Semiconductor datasheet?p=RFN20TJ6SFHG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STD 600V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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RB160M-60TR RB160M-60TR Rohm Semiconductor datasheet?p=RB160M-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Produkt ist nicht verfügbar
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BM64375S-VA BM64375S-VA Rohm Semiconductor Description: 600V IGBT INTELLIGENT POWER MODU
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BM64374S-VA BM64374S-VA Rohm Semiconductor Description: 600V IGBT INTELLIGENT POWER MODU
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BM64378S-VA BM64378S-VA Rohm Semiconductor Description: 600V IGBT INTELLIGENT POWER MODU
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ESR18EZPJ184 ESR18EZPJ184 Rohm Semiconductor esr-e.pdf Description: RES 180K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 180 kOhms
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BA2903YFV-MGE2 BA2903YFV-MGE2 Rohm Semiconductor datasheet?p=BA2903YFV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 GEN PUR 8SSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 1mA
Supplier Device Package: 8-SSOP-B
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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BZX84B12VLYT116 BZX84B12VLYT116 Rohm Semiconductor datasheet?p=BZX84B12VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.67%
Packaging: Tape & Reel (TR)
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BZX84B12VLYT116 BZX84B12VLYT116 Rohm Semiconductor datasheet?p=BZX84B12VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.67%
Packaging: Cut Tape (CT)
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BZX84B12VLYFHT116 BZX84B12VLYFHT116 Rohm Semiconductor datasheet?p=BZX84B12VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 250MW SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.67%
Packaging: Tape & Reel (TR)
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BZX84B12VLYFHT116 BZX84B12VLYFHT116 Rohm Semiconductor datasheet?p=BZX84B12VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12V 250MW SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.67%
Packaging: Cut Tape (CT)
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YFZVFHTR10B YFZVFHTR10B Rohm Semiconductor yfzvfhtr10b-e.pdf Description: DIODE ZENER 9.66V 500MW TUMD2M
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YFZVFHTR10B YFZVFHTR10B Rohm Semiconductor yfzvfhtr10b-e.pdf Description: DIODE ZENER 9.66V 500MW TUMD2M
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YFZVFHTR15B YFZVFHTR15B Rohm Semiconductor yfzvfhtr15b-e.pdf Description: DIODE ZENER 14.26V 500MW TUMD2M
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YFZVFHTR15B YFZVFHTR15B Rohm Semiconductor yfzvfhtr15b-e.pdf Description: DIODE ZENER 14.26V 500MW TUMD2M
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RB508FM-40FHT106 RB508FM-40FHT106 Rohm Semiconductor datasheet?p=RB508FM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: DIODE SCHOTTKY 40V 80MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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RB508FM-40FHT106 RB508FM-40FHT106 Rohm Semiconductor datasheet?p=RB508FM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: DIODE SCHOTTKY 40V 80MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Qualification: AEC-Q101
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BD9151MUV-E2 BD9151MUV-E2 Rohm Semiconductor datasheet?p=BD9151MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK 1.2V/1.8V DL 20VQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN020V4040
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 1.2V, 1.8V
Part Status: Active
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BM2P151X-Z BM2P151X-Z Rohm Semiconductor bm2pxx1x-z-e.pdf Description: IC OFFLINE SW FULL-BRIDGE 7DIP
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DTA123ECAHZGT116 DTA123ECAHZGT116 Rohm Semiconductor datasheet?p=DTA123ECAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DTA123ECAHZGT116 DTA123ECAHZGT116 Rohm Semiconductor datasheet?p=DTA123ECAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DTA123YEFRATL DTA123YEFRATL Rohm Semiconductor datasheet?p=DTA123YEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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DTA123YEFRATL DTA123YEFRATL Rohm Semiconductor datasheet?p=DTA123YEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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DTA123YUAT106 DTA123YUAT106 Rohm Semiconductor dta123yetl-e.pdf Description: TRANS PREBIAS PNP 200MW UMT3
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DTA123YUAT106 DTA123YUAT106 Rohm Semiconductor dta123yetl-e.pdf Description: TRANS PREBIAS PNP 200MW UMT3
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DTA123YCAHZGT116 DTA123YCAHZGT116 Rohm Semiconductor datasheet?p=DTA123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP -100MA -50V DIGITAL TRANSIST
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 350 mW
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DTA123YCAHZGT116 DTA123YCAHZGT116 Rohm Semiconductor datasheet?p=DTA123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP -100MA -50V DIGITAL TRANSIST
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 350 mW
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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DTA123YEBTL DTA123YEBTL Rohm Semiconductor datasheet?p=DTA123YEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
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DTA123YEBTL DTA123YEBTL Rohm Semiconductor datasheet?p=DTA123YEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V UMT3F
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
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DTA123YCAT116 DTA123YCAT116 Rohm Semiconductor datasheet?p=DTA123YCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTA123YCAT116 DTA123YCAT116 Rohm Semiconductor datasheet?p=DTA123YCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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BU7465HFV-TR BU7465HFV-TR Rohm Semiconductor Description: IC OPAMP GP 1 CIRCUIT HVSOF5
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BU7465SHFV-TR BU7465SHFV-TR Rohm Semiconductor Description: IC OPAMP GP 1 CIRCUIT HVSOF5
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RBR40NS60ATL RBR40NS60ATL Rohm Semiconductor datasheet?p=RBR40NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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RBR40NS60ATL RBR40NS60ATL Rohm Semiconductor datasheet?p=RBR40NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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RBR40NS30ATL RBR40NS30ATL Rohm Semiconductor datasheet?p=RBR40NS30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 20A LPTS
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBR40NS30ATL RBR40NS30ATL Rohm Semiconductor datasheet?p=RBR40NS30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 30V 20A LPTS
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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SMF8V0TR SMF8V0TR Rohm Semiconductor smf8v0tr-e.pdf Description: TVS DIODE 8VWM 13.6VC PMDU
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SMF8V0TR SMF8V0TR Rohm Semiconductor smf8v0tr-e.pdf Description: TVS DIODE 8VWM 13.6VC PMDU
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SMF8V0TFTR SMF8V0TFTR Rohm Semiconductor datasheet?p=SMF8V0TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 8VWM 13.6VC PMDU
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SMF8V0TFTR SMF8V0TFTR Rohm Semiconductor datasheet?p=SMF8V0TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 8VWM 13.6VC PMDU
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RSQ015P10HZGTR RSQ015P10HZGTR Rohm Semiconductor rsq015p10hzgtr-e.pdf Description: MOSFET P-CH 100V 1.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
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RSQ015P10HZGTR RSQ015P10HZGTR Rohm Semiconductor rsq015p10hzgtr-e.pdf Description: MOSFET P-CH 100V 1.5A TSMT6
Qualification: AEC-Q101
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
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LF-3011VK datasheet?p=LF-3011VK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LF-3011VK
Hersteller: Rohm Semiconductor
Description: DISPLAY 7SEG 0.32" SGL RED 10SMD
Power Dissipation (Max): 320mW
Wavelength - Peak: 650nm
Current - Test: 10mA
Voltage - Forward (Vf) (Typ): 2V
Digit/Alpha Size: 0.32" (8.00mm)
Common Pin: Common Cathode
Millicandela Rating: 10mcd
Number of Characters: 1
Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm)
Display Type: 7-Segment
Color: Red
Package / Case: 10-SMD, Gull Wing
Packaging: Cut Tape (CT)
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R6070JNZ4C13 datasheet?p=R6070JNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6070JNZ4C13
Hersteller: Rohm Semiconductor
Description: 600V 70A TO-247, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 35A, 15V
Power Dissipation (Max): 770W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 100 V
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BZX84B11VLYFHT116 datasheet?p=BZX84B11VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B11VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 250MW SOT23
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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BZX84B11VLYT116 datasheet?p=BZX84B11VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B11VLYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 250MW SOT23
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Produkt ist nicht verfügbar
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BZX84B11VLYFHT116 datasheet?p=BZX84B11VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B11VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 250MW SOT23
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 4832 Stücke:
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30+0.6 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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BZX84B11VLYT116 datasheet?p=BZX84B11VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B11VLYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 11V 250MW SOT23
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 2698 Stücke:
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Anzahl Preis
42+0.42 EUR
70+0.25 EUR
163+0.11 EUR
1000+0.1 EUR
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BU46K252G-TL datasheet?p=BU46K252G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU46K252G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 120ms Minimum
Voltage - Threshold: 2.5V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
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BU46K252G-TL datasheet?p=BU46K252G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU46K252G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 120ms Minimum
Voltage - Threshold: 2.5V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
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18+1.02 EUR
20+0.9 EUR
25+0.84 EUR
100+0.69 EUR
250+0.64 EUR
500+0.54 EUR
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BU45L332G-TL bu45kxxxg-e.pdf
BU45L332G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Produkt ist nicht verfügbar
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BU45L332G-TL bu45kxxxg-e.pdf
BU45L332G-TL
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
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BM64377S-VA datasheet?p=BM64377S-VA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM64377S-VA
Hersteller: Rohm Semiconductor
Description: 600V IGBT INTELLIGENT POWER MODU
Voltage: 600 V
Current: 30 A
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
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1+45.55 EUR
10+40.47 EUR
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BM63377S-VC datasheet?p=BM63377S-VC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM63377S-VC
Hersteller: Rohm Semiconductor
Description: 600V IGBT INTELLIGENT POWER MODU
Voltage: 600 V
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
Packaging: Tube
Current: 30 A
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BM63377S-VA datasheet?p=BM63377S-VA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BM63377S-VA
Hersteller: Rohm Semiconductor
Description: 600V IGBT INTELLIGENT POWER MODU
Voltage: 600 V
Current: 30 A
Part Status: Active
Voltage - Isolation: 1500Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)
Packaging: Tube
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RFV12TJ6SGC9 datasheet?p=RFV12TJ6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFV12TJ6SGC9
Hersteller: Rohm Semiconductor
Description: DIODE STD 600V 12A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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5+3.71 EUR
50+1.81 EUR
100+1.62 EUR
500+1.3 EUR
1000+1.19 EUR
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RFV15TJ6SGC9 datasheet?p=RFV15TJ6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFV15TJ6SGC9
Hersteller: Rohm Semiconductor
Description: DIODE STD 600V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 893 Stücke:
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8+2.22 EUR
50+1.05 EUR
100+0.93 EUR
500+0.73 EUR
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RFNL15TJ6SGC9 datasheet?p=RFNL15TJ6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFNL15TJ6SGC9
Hersteller: Rohm Semiconductor
Description: DIODE GP 600V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 388 Stücke:
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6+3.13 EUR
50+1.66 EUR
100+1.51 EUR
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RFUH5TF6SC9 rfuh5tf6s-e.pdf
RFUH5TF6SC9
Hersteller: Rohm Semiconductor
Description: RFUH5TF6S IS SUPER FAST RECOVERY
auf Bestellung 874 Stücke:
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RFN20TJ6SFHGC9 datasheet?p=RFN20TJ6SFHG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN20TJ6SFHGC9
Hersteller: Rohm Semiconductor
Description: DIODE STD 600V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 978 Stücke:
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3+6.09 EUR
50+3.07 EUR
100+2.78 EUR
500+2.27 EUR
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RB160M-60TR datasheet?p=RB160M-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB160M-60TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Produkt ist nicht verfügbar
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BM64375S-VA
BM64375S-VA
Hersteller: Rohm Semiconductor
Description: 600V IGBT INTELLIGENT POWER MODU
auf Bestellung 5 Stücke:
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Anzahl Preis
1+41.82 EUR
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BM64374S-VA
BM64374S-VA
Hersteller: Rohm Semiconductor
Description: 600V IGBT INTELLIGENT POWER MODU
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Anzahl Preis
1+36.33 EUR
10+33.51 EUR
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BM64378S-VA
BM64378S-VA
Hersteller: Rohm Semiconductor
Description: 600V IGBT INTELLIGENT POWER MODU
auf Bestellung 28 Stücke:
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1+52.08 EUR
10+48.04 EUR
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ESR18EZPJ184 esr-e.pdf
ESR18EZPJ184
Hersteller: Rohm Semiconductor
Description: RES 180K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 180 kOhms
auf Bestellung 3127 Stücke:
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67+0.26 EUR
130+0.14 EUR
165+0.11 EUR
196+0.09 EUR
233+0.076 EUR
273+0.065 EUR
500+0.057 EUR
1000+0.051 EUR
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BA2903YFV-MGE2 datasheet?p=BA2903YFV-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA2903YFV-MGE2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Qualification: AEC-Q100
Grade: Automotive
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 1mA
Supplier Device Package: 8-SSOP-B
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open-Collector
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 6725 Stücke:
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16+1.13 EUR
22+0.8 EUR
25+0.72 EUR
100+0.63 EUR
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500+0.56 EUR
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BZX84B12VLYT116 datasheet?p=BZX84B12VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B12VLYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.67%
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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BZX84B12VLYT116 datasheet?p=BZX84B12VLY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B12VLYT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 250MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.67%
Packaging: Cut Tape (CT)
auf Bestellung 3041 Stücke:
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Anzahl Preis
34+0.53 EUR
54+0.33 EUR
100+0.19 EUR
500+0.15 EUR
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BZX84B12VLYFHT116 datasheet?p=BZX84B12VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B12VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 250MW SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.67%
Packaging: Tape & Reel (TR)
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BZX84B12VLYFHT116 datasheet?p=BZX84B12VLYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84B12VLYFHT116
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 12V 250MW SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 250 mW
Part Status: Active
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1.67%
Packaging: Cut Tape (CT)
auf Bestellung 488 Stücke:
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Anzahl Preis
39+0.46 EUR
56+0.32 EUR
102+0.17 EUR
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YFZVFHTR10B yfzvfhtr10b-e.pdf
YFZVFHTR10B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.66V 500MW TUMD2M
Produkt ist nicht verfügbar
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YFZVFHTR10B yfzvfhtr10b-e.pdf
YFZVFHTR10B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 9.66V 500MW TUMD2M
auf Bestellung 2475 Stücke:
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YFZVFHTR15B yfzvfhtr15b-e.pdf
YFZVFHTR15B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 14.26V 500MW TUMD2M
Produkt ist nicht verfügbar
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YFZVFHTR15B yfzvfhtr15b-e.pdf
YFZVFHTR15B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 14.26V 500MW TUMD2M
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RB508FM-40FHT106 datasheet?p=RB508FM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB508FM-40FHT106
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 80MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.13 EUR
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RB508FM-40FHT106 datasheet?p=RB508FM-40FH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB508FM-40FHT106
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 80MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 80mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 40 mA
Current - Reverse Leakage @ Vr: 35 nA @ 30 V
Qualification: AEC-Q101
auf Bestellung 5311 Stücke:
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Anzahl Preis
28+0.63 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
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BD9151MUV-E2 datasheet?p=BD9151MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9151MUV-E2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK 1.2V/1.8V DL 20VQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VQFN020V4040
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.8V
Voltage - Output (Min/Fixed): 1.2V, 1.8V
Part Status: Active
Produkt ist nicht verfügbar
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BM2P151X-Z bm2pxx1x-z-e.pdf
BM2P151X-Z
Hersteller: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 7DIP
auf Bestellung 962 Stücke:
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DTA123ECAHZGT116 datasheet?p=DTA123ECAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123ECAHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DTA123ECAHZGT116 datasheet?p=DTA123ECAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123ECAHZGT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
68+0.26 EUR
109+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 42
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DTA123YEFRATL datasheet?p=DTA123YEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YEFRATL
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DTA123YEFRATL datasheet?p=DTA123YEFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YEFRATL
Hersteller: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
33+0.55 EUR
100+0.29 EUR
500+0.19 EUR
Mindestbestellmenge: 27
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DTA123YUAT106 dta123yetl-e.pdf
DTA123YUAT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW UMT3
Produkt ist nicht verfügbar
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DTA123YUAT106 dta123yetl-e.pdf
DTA123YUAT106
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW UMT3
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DTA123YCAHZGT116 datasheet?p=DTA123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YCAHZGT116
Hersteller: Rohm Semiconductor
Description: PNP -100MA -50V DIGITAL TRANSIST
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 350 mW
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DTA123YCAHZGT116 datasheet?p=DTA123YCAHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YCAHZGT116
Hersteller: Rohm Semiconductor
Description: PNP -100MA -50V DIGITAL TRANSIST
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 350 mW
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SST3
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
53+0.33 EUR
100+0.18 EUR
500+0.11 EUR
1000+0.076 EUR
Mindestbestellmenge: 48
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DTA123YEBTL datasheet?p=DTA123YEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
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DTA123YEBTL datasheet?p=DTA123YEB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YEBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
63+0.28 EUR
129+0.14 EUR
500+0.11 EUR
1000+0.079 EUR
Mindestbestellmenge: 44
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DTA123YCAT116 datasheet?p=DTA123YCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA123YCAT116 datasheet?p=DTA123YCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 22 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 1414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
82+0.21 EUR
133+0.13 EUR
500+0.097 EUR
1000+0.086 EUR
Mindestbestellmenge: 50
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BU7465HFV-TR
BU7465HFV-TR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1 CIRCUIT HVSOF5
Produkt ist nicht verfügbar
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BU7465SHFV-TR
BU7465SHFV-TR
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1 CIRCUIT HVSOF5
Produkt ist nicht verfügbar
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RBR40NS60ATL datasheet?p=RBR40NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR40NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBR40NS60ATL datasheet?p=RBR40NS60A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR40NS60ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 960 Stücke:
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Anzahl Preis
6+3.34 EUR
10+2.79 EUR
100+2.22 EUR
500+1.88 EUR
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RBR40NS30ATL datasheet?p=RBR40NS30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR40NS30ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 20A LPTS
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RBR40NS30ATL datasheet?p=RBR40NS30A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR40NS30ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 30V 20A LPTS
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPTS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 340 Stücke:
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Anzahl Preis
4+4.59 EUR
10+3.82 EUR
100+3.04 EUR
Mindestbestellmenge: 4
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SMF8V0TR smf8v0tr-e.pdf
SMF8V0TR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8VWM 13.6VC PMDU
Produkt ist nicht verfügbar
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SMF8V0TR smf8v0tr-e.pdf
SMF8V0TR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8VWM 13.6VC PMDU
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SMF8V0TFTR datasheet?p=SMF8V0TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMF8V0TFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8VWM 13.6VC PMDU
Produkt ist nicht verfügbar
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SMF8V0TFTR datasheet?p=SMF8V0TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SMF8V0TFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8VWM 13.6VC PMDU
auf Bestellung 3 Stücke:
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RSQ015P10HZGTR rsq015p10hzgtr-e.pdf
RSQ015P10HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 1.5A TSMT6
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
auf Bestellung 15000 Stücke:
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Anzahl Preis
3000+0.45 EUR
9000+0.43 EUR
Mindestbestellmenge: 3000
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RSQ015P10HZGTR rsq015p10hzgtr-e.pdf
RSQ015P10HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 1.5A TSMT6
Qualification: AEC-Q101
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT6 (SC-95)
auf Bestellung 17270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.58 EUR
Mindestbestellmenge: 15
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