Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (102210) > Seite 852 nach 1704
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QS6K1FRATR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 1A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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QS6K1FRATR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 1A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 900mW (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12194 Stücke: Lieferzeit 10-14 Tag (e) |
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BD3401KS2 | Rohm Semiconductor |
Description: IC AUDIO SGNL PROCESSOR 64SQFPTPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Audio Signal Processor Interface: 2-Wire Serial Operating Temperature: -25°C ~ 75°C (TA) Voltage - Supply: 8V ~ 9.5V Applications: Pre-Amplifier Supplier Device Package: 64-SQFP-T (12x12) Part Status: Obsolete Number of Channels: 2 |
Produkt ist nicht verfügbar |
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UDZVFHTE-172.7B | Rohm Semiconductor |
Description: DIODE ZENER 2.7V 200MW UMD2Packaging: Tape & Reel (TR) Tolerance: ±4.07% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 110 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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UDZVFHTE-172.7B | Rohm Semiconductor |
Description: DIODE ZENER 2.7V 200MW UMD2Packaging: Cut Tape (CT) Tolerance: ±4.07% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 110 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4291 Stücke: Lieferzeit 10-14 Tag (e) |
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UDZVFHTE-172.0B | Rohm Semiconductor |
Description: DIODE ZENER 2V 200MW UMD2Packaging: Tape & Reel (TR) Tolerance: ±4.5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 120 µA @ 500 mV Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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UDZVFHTE-172.0B | Rohm Semiconductor |
Description: DIODE ZENER 2V 200MW UMD2Packaging: Cut Tape (CT) Tolerance: ±4.5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 120 µA @ 500 mV Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3538 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24H256FVT-5ACE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT I2C 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 32K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 7430 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24H128NUX-5ACTR | Rohm Semiconductor |
Description: IC EEPROM 128KBIT I2C 8VSONPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: VSON008X2030 Write Cycle Time - Word, Page: 3.5ms Memory Interface: I2C Memory Organization: 16K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 8195 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT50NS65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 48A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
Produkt ist nicht verfügbar |
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RGT50NS65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 48A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
auf Bestellung 1014 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT60TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 55A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 29ns/100ns Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 194 W |
Produkt ist nicht verfügbar |
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RGTH60TS65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 58A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 197 W |
Produkt ist nicht verfügbar |
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BR93H66RFJ-WCE2 | Rohm Semiconductor |
Description: IC EEPROM 4KBIT SPI 8SOPJ |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BR93H66RFJ-WCE2 | Rohm Semiconductor |
Description: IC EEPROM 4KBIT SPI 8SOPJ |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BU24024GU-E2 | Rohm Semiconductor | Description: IC MTR DRV BIPLR 2.7-3.6V 85VCSP |
Produkt ist nicht verfügbar |
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BD18353EFV-ME2 | Rohm Semiconductor |
Description: IC LED DRIVER CTRLR PWM 20HTSSOPPackaging: Tape & Reel (TR) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Voltage - Output: 65V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 200kHz ~ 2.5MHz Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TA) Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: 20-HTSSOP-B Dimming: Analog, PWM Voltage - Supply (Min): 5V Voltage - Supply (Max): 65V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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BD18353EFV-ME2 | Rohm Semiconductor |
Description: IC LED DRIVER CTRLR PWM 20HTSSOPPackaging: Cut Tape (CT) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Voltage - Output: 65V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 200kHz ~ 2.5MHz Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TA) Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: 20-HTSSOP-B Dimming: Analog, PWM Voltage - Supply (Min): 5V Voltage - Supply (Max): 65V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1710 Stücke: Lieferzeit 10-14 Tag (e) |
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RF1001NS2DFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 10A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RF1001NS2DFHTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 10A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 702 Stücke: Lieferzeit 10-14 Tag (e) |
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RF1001NS2DTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 10A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RF1001NS2DTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 10A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 2912 Stücke: Lieferzeit 10-14 Tag (e) |
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RF1001T2DNZC9 | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 10A TO-220FNPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 878 Stücke: Lieferzeit 10-14 Tag (e) |
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RB162VAM-20TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 1A TUMD2M |
Produkt ist nicht verfügbar |
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RB162VAM-20TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 1A TUMD2M |
auf Bestellung 1344 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DTB123YCT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.5A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
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DTB123YCT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.5A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
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KDZVTR2.7B | Rohm Semiconductor |
Description: DIODE ZENER 2.7V 1W PMDU |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KDZVTR2.7B | Rohm Semiconductor |
Description: DIODE ZENER 2.7V 1W PMDU |
auf Bestellung 5940 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BC857BU3HZGT106 | Rohm Semiconductor |
Description: TRANS PNP 45V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857BU3HZGT106 | Rohm Semiconductor |
Description: TRANS PNP 45V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4751 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC115GU3HZGT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Emitter Base (R2): 100 kOhms Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC115GU3HZGT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Emitter Base (R2): 100 kOhms Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC114GU3HZGT106 | Rohm Semiconductor | Description: AUTOMOTIVE NPN 100MA 50V DIGITAL |
Produkt ist nicht verfügbar |
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DTC114GU3HZGT106 | Rohm Semiconductor | Description: AUTOMOTIVE NPN 100MA 50V DIGITAL |
auf Bestellung 2994 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DTA143XU3HZGT106 | Rohm Semiconductor |
Description: DTA143XU3HZG IS AN DIGITAL TRANSPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
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DTA143XU3HZGT106 | Rohm Semiconductor |
Description: DTA143XU3HZG IS AN DIGITAL TRANSPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC114TU3HZGT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 Only |
Produkt ist nicht verfügbar |
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DTC114TU3HZGT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 Only |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA124EU3HZGT106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DTA124EU3HZGT106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 2164 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24G512FJ-3AGTE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BR24G512FJ-3AGTE2 | Rohm Semiconductor |
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1577 Stücke: Lieferzeit 10-14 Tag (e) |
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BR24G1MFJ-3AGTE2 | Rohm Semiconductor |
Description: IC EEPROM 1MBIT I2C 1MHZ 8SOPJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BR24G1MFJ-3AGTE2 | Rohm Semiconductor |
Description: IC EEPROM 1MBIT I2C 1MHZ 8SOPJ |
auf Bestellung 643 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMF13VTR | Rohm Semiconductor |
Description: TRANSIENT VOLTAGE SUPPRESSOR - S |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMF13VTR | Rohm Semiconductor |
Description: TRANSIENT VOLTAGE SUPPRESSOR - S |
auf Bestellung 1674 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BA6423AF-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 6V-28V 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: Logic Operating Temperature: -40°C ~ 100°C Output Configuration: Half Bridge (2) Voltage - Supply: 6V ~ 28V Applications: Fan Motor Driver Technology: Bipolar Supplier Device Package: 8-SOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD61243FV-GE2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 5.5V-16V 14SSOPBPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 200mA Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 5.5V ~ 16V Applications: Fan Motor Driver Technology: DMOS Supplier Device Package: 14-SSOPB Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD61243FV-GE2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 5.5V-16V 14SSOPBPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 200mA Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 5.5V ~ 16V Applications: Fan Motor Driver Technology: DMOS Supplier Device Package: 14-SSOPB Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
auf Bestellung 2275 Stücke: Lieferzeit 10-14 Tag (e) |
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BD61247NUX-E2 | Rohm Semiconductor |
Description: MULTIFUNCTION SINGLE-PHASE FULL-Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 200mA Interface: PWM Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 16V Applications: Fan Motor Driver Technology: DMOS Voltage - Load: 18V Supplier Device Package: VSON010X3030 Motor Type - AC, DC: Brushless DC (BLDC) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD61247NUX-E2 | Rohm Semiconductor |
Description: MULTIFUNCTION SINGLE-PHASE FULL-Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 200mA Interface: PWM Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 16V Applications: Fan Motor Driver Technology: DMOS Voltage - Load: 18V Supplier Device Package: VSON010X3030 Motor Type - AC, DC: Brushless DC (BLDC) |
auf Bestellung 3988 Stücke: Lieferzeit 10-14 Tag (e) |
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BD61241FV-GE2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 5.5V-16V 16SSOPBPackaging: Tape & Reel (TR) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 200mA Interface: PWM Operating Temperature: -40°C ~ 105°C Output Configuration: Pre-Driver - Half Bridge (2) Voltage - Supply: 5.5V ~ 16V Applications: Fan Motor Driver Technology: DMOS Supplier Device Package: 16-SSOP-B Motor Type - AC, DC: Brushless DC (BLDC) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD61241FV-GE2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 5.5V-16V 16SSOPBPackaging: Cut Tape (CT) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 200mA Interface: PWM Operating Temperature: -40°C ~ 105°C Output Configuration: Pre-Driver - Half Bridge (2) Voltage - Supply: 5.5V ~ 16V Applications: Fan Motor Driver Technology: DMOS Supplier Device Package: 16-SSOP-B Motor Type - AC, DC: Brushless DC (BLDC) |
auf Bestellung 2494 Stücke: Lieferzeit 10-14 Tag (e) |
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BD61245EFV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER HTSSOP-B16 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD61245EFV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER HTSSOP-B16 |
auf Bestellung 2454 Stücke: Lieferzeit 10-14 Tag (e) |
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2SAR514P5T100 | Rohm Semiconductor |
Description: TRANS PNP 80V 0.7A MPT3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 380MHz Supplier Device Package: MPT3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SAR514P5T100 | Rohm Semiconductor |
Description: TRANS PNP 80V 0.7A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 380MHz Supplier Device Package: MPT3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
auf Bestellung 1171 Stücke: Lieferzeit 10-14 Tag (e) |
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2SAR514PFRAT100 | Rohm Semiconductor |
Description: TRANS PNP 80V 0.7A MPT3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 380MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2SAR514PFRAT100 | Rohm Semiconductor |
Description: TRANS PNP 80V 0.7A MPT3Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 380MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 156 Stücke: Lieferzeit 10-14 Tag (e) |
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| QS6K1FRATR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| QS6K1FRATR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12194 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 18+ | 0.98 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| BD3401KS2 |
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Hersteller: Rohm Semiconductor
Description: IC AUDIO SGNL PROCESSOR 64SQFPT
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Audio Signal Processor
Interface: 2-Wire Serial
Operating Temperature: -25°C ~ 75°C (TA)
Voltage - Supply: 8V ~ 9.5V
Applications: Pre-Amplifier
Supplier Device Package: 64-SQFP-T (12x12)
Part Status: Obsolete
Number of Channels: 2
Description: IC AUDIO SGNL PROCESSOR 64SQFPT
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Audio Signal Processor
Interface: 2-Wire Serial
Operating Temperature: -25°C ~ 75°C (TA)
Voltage - Supply: 8V ~ 9.5V
Applications: Pre-Amplifier
Supplier Device Package: 64-SQFP-T (12x12)
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZVFHTE-172.7B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2.7V 200MW UMD2
Packaging: Tape & Reel (TR)
Tolerance: ±4.07%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 200MW UMD2
Packaging: Tape & Reel (TR)
Tolerance: ±4.07%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UDZVFHTE-172.7B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2.7V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±4.07%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±4.07%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4291 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 0.35 EUR |
| 77+ | 0.23 EUR |
| 116+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.099 EUR |
| UDZVFHTE-172.0B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2V 200MW UMD2
Packaging: Tape & Reel (TR)
Tolerance: ±4.5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2V 200MW UMD2
Packaging: Tape & Reel (TR)
Tolerance: ±4.5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.069 EUR |
| UDZVFHTE-172.0B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±4.5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±4.5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3538 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 0.33 EUR |
| 80+ | 0.22 EUR |
| 112+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| BR24H256FVT-5ACE2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7430 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.5 EUR |
| 25+ | 1.45 EUR |
| 50+ | 1.42 EUR |
| 100+ | 1.39 EUR |
| 250+ | 1.35 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.28 EUR |
| BR24H128NUX-5ACTR |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 128KBIT I2C 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: VSON008X2030
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I2C
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8195 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 14+ | 1.31 EUR |
| 25+ | 1.27 EUR |
| 50+ | 1.24 EUR |
| 100+ | 1.21 EUR |
| 250+ | 1.18 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.12 EUR |
| RGT50NS65DGTL |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RGT50NS65DGTL |
![]() |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
auf Bestellung 1014 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.22 EUR |
| 10+ | 4.76 EUR |
| 100+ | 3.37 EUR |
| 500+ | 2.77 EUR |
| RGT60TS65DGC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/100ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 194 W
Description: IGBT TRNCH FIELD 650V 55A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/100ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 194 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RGTH60TS65GC11 |
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Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 58A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 197 W
Description: IGBT TRNCH FIELD 650V 58A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/105ns
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 197 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR93H66RFJ-WCE2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 4KBIT SPI 8SOPJ
Description: IC EEPROM 4KBIT SPI 8SOPJ
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BR93H66RFJ-WCE2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 4KBIT SPI 8SOPJ
Description: IC EEPROM 4KBIT SPI 8SOPJ
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BU24024GU-E2 |
Hersteller: Rohm Semiconductor
Description: IC MTR DRV BIPLR 2.7-3.6V 85VCSP
Description: IC MTR DRV BIPLR 2.7-3.6V 85VCSP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD18353EFV-ME2 |
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Hersteller: Rohm Semiconductor
Description: IC LED DRIVER CTRLR PWM 20HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 65V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 2.5MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 20-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 65V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC LED DRIVER CTRLR PWM 20HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 65V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 2.5MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 20-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 65V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD18353EFV-ME2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC LED DRIVER CTRLR PWM 20HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 65V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 2.5MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 20-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 65V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC LED DRIVER CTRLR PWM 20HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 65V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 2.5MHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: 20-HTSSOP-B
Dimming: Analog, PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 65V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.21 EUR |
| 10+ | 3.15 EUR |
| 25+ | 2.88 EUR |
| 100+ | 2.59 EUR |
| 250+ | 2.45 EUR |
| 500+ | 2.36 EUR |
| 1000+ | 2.29 EUR |
| RF1001NS2DFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RF1001NS2DFHTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 702 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.64 EUR |
| 13+ | 1.4 EUR |
| RF1001NS2DTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 1 EUR |
| RF1001NS2DTL |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2912 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.43 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.3 EUR |
| RF1001T2DNZC9 |
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Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 10A TO-220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A TO-220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 878 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.74 EUR |
| 50+ | 0.85 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.59 EUR |
| RB162VAM-20TR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A TUMD2M
Description: DIODE SCHOTTKY 20V 1A TUMD2M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB162VAM-20TR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A TUMD2M
Description: DIODE SCHOTTKY 20V 1A TUMD2M
auf Bestellung 1344 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DTB123YCT116 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTB123YCT116 |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 69+ | 0.26 EUR |
| 111+ | 0.16 EUR |
| KDZVTR2.7B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2.7V 1W PMDU
Description: DIODE ZENER 2.7V 1W PMDU
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| KDZVTR2.7B |
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Hersteller: Rohm Semiconductor
Description: DIODE ZENER 2.7V 1W PMDU
Description: DIODE ZENER 2.7V 1W PMDU
auf Bestellung 5940 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BC857BU3HZGT106 |
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Hersteller: Rohm Semiconductor
Description: TRANS PNP 45V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.088 EUR |
| BC857BU3HZGT106 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 45V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4751 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 68+ | 0.26 EUR |
| 109+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| DTC115GU3HZGT106 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.1 EUR |
| DTC115GU3HZGT106 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 60+ | 0.3 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| DTC114GU3HZGT106 |
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE NPN 100MA 50V DIGITAL
Description: AUTOMOTIVE NPN 100MA 50V DIGITAL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC114GU3HZGT106 |
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE NPN 100MA 50V DIGITAL
Description: AUTOMOTIVE NPN 100MA 50V DIGITAL
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| DTA143XU3HZGT106 |
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Hersteller: Rohm Semiconductor
Description: DTA143XU3HZG IS AN DIGITAL TRANS
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: DTA143XU3HZG IS AN DIGITAL TRANS
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143XU3HZGT106 |
![]() |
Hersteller: Rohm Semiconductor
Description: DTA143XU3HZG IS AN DIGITAL TRANS
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: DTA143XU3HZG IS AN DIGITAL TRANS
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 33+ | 0.55 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.13 EUR |
| DTC114TU3HZGT106 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC114TU3HZGT106 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 60+ | 0.3 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| DTA124EU3HZGT106 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA124EU3HZGT106 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 2164 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 67+ | 0.27 EUR |
| 107+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| BR24G512FJ-3AGTE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJ
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR24G512FJ-3AGTE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 1MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1577 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 1.99 EUR |
| 10+ | 1.81 EUR |
| 25+ | 1.76 EUR |
| 50+ | 1.75 EUR |
| 100+ | 1.57 EUR |
| 250+ | 1.56 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.47 EUR |
| BR24G1MFJ-3AGTE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 1MBIT I2C 1MHZ 8SOPJ
Description: IC EEPROM 1MBIT I2C 1MHZ 8SOPJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BR24G1MFJ-3AGTE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC EEPROM 1MBIT I2C 1MHZ 8SOPJ
Description: IC EEPROM 1MBIT I2C 1MHZ 8SOPJ
auf Bestellung 643 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SMF13VTR |
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Hersteller: Rohm Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR - S
Description: TRANSIENT VOLTAGE SUPPRESSOR - S
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMF13VTR |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR - S
Description: TRANSIENT VOLTAGE SUPPRESSOR - S
auf Bestellung 1674 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BA6423AF-E2 |
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Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 6V-28V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Logic
Operating Temperature: -40°C ~ 100°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 28V
Applications: Fan Motor Driver
Technology: Bipolar
Supplier Device Package: 8-SOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRIVER 6V-28V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Logic
Operating Temperature: -40°C ~ 100°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 28V
Applications: Fan Motor Driver
Technology: Bipolar
Supplier Device Package: 8-SOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD61243FV-GE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 14SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Supplier Device Package: 14-SSOPB
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 5.5V-16V 14SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Supplier Device Package: 14-SSOPB
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD61243FV-GE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 14SSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Supplier Device Package: 14-SSOPB
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 5.5V-16V 14SSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Supplier Device Package: 14-SSOPB
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 2275 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.22 EUR |
| 10+ | 1.99 EUR |
| 25+ | 1.89 EUR |
| 100+ | 1.55 EUR |
| 250+ | 1.45 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.01 EUR |
| BD61247NUX-E2 |
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Hersteller: Rohm Semiconductor
Description: MULTIFUNCTION SINGLE-PHASE FULL-
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Voltage - Load: 18V
Supplier Device Package: VSON010X3030
Motor Type - AC, DC: Brushless DC (BLDC)
Description: MULTIFUNCTION SINGLE-PHASE FULL-
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Voltage - Load: 18V
Supplier Device Package: VSON010X3030
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD61247NUX-E2 |
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Hersteller: Rohm Semiconductor
Description: MULTIFUNCTION SINGLE-PHASE FULL-
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Voltage - Load: 18V
Supplier Device Package: VSON010X3030
Motor Type - AC, DC: Brushless DC (BLDC)
Description: MULTIFUNCTION SINGLE-PHASE FULL-
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Voltage - Load: 18V
Supplier Device Package: VSON010X3030
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.71 EUR |
| 12+ | 1.52 EUR |
| 25+ | 1.44 EUR |
| 100+ | 1.18 EUR |
| 250+ | 1.11 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.77 EUR |
| BD61241FV-GE2 |
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Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 16SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 5.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Supplier Device Package: 16-SSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRIVER 5.5V-16V 16SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 5.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Supplier Device Package: 16-SSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD61241FV-GE2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 16SSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 5.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Supplier Device Package: 16-SSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRIVER 5.5V-16V 16SSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 200mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 5.5V ~ 16V
Applications: Fan Motor Driver
Technology: DMOS
Supplier Device Package: 16-SSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 2494 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.81 EUR |
| 11+ | 1.62 EUR |
| 25+ | 1.54 EUR |
| 100+ | 1.26 EUR |
| 250+ | 1.18 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.82 EUR |
| BD61245EFV-E2 |
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Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER HTSSOP-B16
Description: IC MOTOR DRIVER HTSSOP-B16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD61245EFV-E2 |
![]() |
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER HTSSOP-B16
Description: IC MOTOR DRIVER HTSSOP-B16
auf Bestellung 2454 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.24 EUR |
| 10+ | 2.91 EUR |
| 25+ | 2.74 EUR |
| 100+ | 2.34 EUR |
| 250+ | 2.19 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.59 EUR |
| 2SAR514P5T100 |
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Hersteller: Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 380MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 380MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.25 EUR |
| 2SAR514P5T100 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 380MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 380MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
auf Bestellung 1171 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| 2SAR514PFRAT100 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 380MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 380MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SAR514PFRAT100 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 380MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 80V 0.7A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 380MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 29+ | 0.61 EUR |
| 100+ | 0.37 EUR |

























